JP2017041561A - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP2017041561A
JP2017041561A JP2015163055A JP2015163055A JP2017041561A JP 2017041561 A JP2017041561 A JP 2017041561A JP 2015163055 A JP2015163055 A JP 2015163055A JP 2015163055 A JP2015163055 A JP 2015163055A JP 2017041561 A JP2017041561 A JP 2017041561A
Authority
JP
Japan
Prior art keywords
package
semiconductor device
transparent
cap
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2015163055A
Other languages
English (en)
Other versions
JP6477355B2 (ja
Inventor
剛 細見
Go Hosomi
剛 細見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2015163055A priority Critical patent/JP6477355B2/ja
Priority to US15/132,302 priority patent/US9711460B2/en
Priority to TW105112228A priority patent/TWI671868B/zh
Priority to CN201610694218.0A priority patent/CN106469686B/zh
Publication of JP2017041561A publication Critical patent/JP2017041561A/ja
Application granted granted Critical
Publication of JP6477355B2 publication Critical patent/JP6477355B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54433—Marks applied to semiconductor devices or parts containing identification or tracking information
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
    • H01L2223/54486—Located on package parts, e.g. encapsulation, leads, package substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6683—High-frequency adaptations for monolithic microwave integrated circuit [MMIC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85401—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/85411—Tin (Sn) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85439—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85444—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Abstract

【課題】パッケージの封止後に内部を観察可能にしつつ、パッケージの外観を容易に認識できる半導体装置を得る。【解決手段】半導体装置は、電子部品３を有する半導体チップ２と、半導体チップ２を封止するパッケージ１とを備える。パッケージ１は、可視光に対して不透明であって近赤外光又は近紫外光に対して透明な透明部５を有する。透明部５は電子部品３が外部から近赤外光又は近紫外光により観察可能となるような位置に配置される。【選択図】図１

Description

本発明は、パッケージの封止後に内部を観察可能にしつつ、パッケージの外観を容易に認識できる半導体装置に関する。
トランジスタ、ダイオード又はＩＣなどの半導体チップを、金属、セラミックス又は樹脂などで構成されるパッケージ内に収納した半導体装置は様々な電子機器に用いられてきている。この半導体装置ではパッケージ内部に異物が混入すると、出荷前の電気特性検査では異常は見られずとも、出荷後に使用されている間に異物が変形したり成分の一部が半導体チップを劣化させたりすることで半導体装置の電気特性に異常を引き起こす場合がある。そこで、組み立ての際にパッケージ内及び半導体チップ上を光学顕微鏡により観察し異物混入を検査している。しかし、パッケージ内部の異物検査後から封止までの間に異物が混入する場合があり、封止後の電気特性検査の時点で電気特性に異常を及ぼしていない異物混入品を検出できなかった。これに対し、封止されたＩＣを容易に視認できる透明なパッケージを用いた半導体装置が提案されている（例えば、特許文献１参照）。
特開２００２−８８１号公報
パッケージ上には、電極の方向、製品名及び製造番号などを示すマークが印字される。しかし、可視光に対して透明なパッケージを用いる場合、パッケージ上に印字されたマークと、パッケージを透けて見える内部構造とが重なって、マークが読みとり難い。また、外観検査でパッケージ表面の傷が検出し難くなる。
本発明は、上述のような課題を解決するためになされたもので、その目的はパッケージの封止後に内部を観察可能にしつつ、パッケージの外観を容易に認識できる半導体装置を得るものである。
本発明に係る半導体装置は、電子部品を有する半導体チップと、前記半導体チップを封止するパッケージとを備え、前記パッケージは、可視光に対して不透明であって近赤外光又は近紫外光に対して透明な透明部を有し、前記透明部は前記電子部品が外部から前記近赤外光又は前記近紫外光により観察可能となるような位置に配置されることを特徴とする。
本発明ではパッケージの透明部は可視光に対して不透明であるため、パッケージの外観を容易に認識できる。また、透明部が近赤外光又は近紫外光に対して透明であるため、パッケージの封止後に内部を近赤外光又は近紫外光により観察可能である。
本発明の実施の形態１に係る半導体装置を示す断面図である。 本発明の実施の形態１に係るキャップを示す断面図である。 本発明の実施の形態２に係る半導体装置を示す断面図である。
本発明の実施の形態に係る半導体装置について図面を参照して説明する。同じ又は対応する構成要素には同じ符号を付し、説明の繰り返しを省略する場合がある。
実施の形態１．
図１は、本発明の実施の形態１に係る半導体装置を示す断面図である。この半導体装置は受光デバイス及び発光デバイスの何れでもなく、例えば、マイクロ波通信用高周波信号増幅デバイス、スイッチングデバイス、発振器、及びＭＭＩＣ（Monolithic Microwave Integrated Circuit）などである。従って、通常のデバイスの機能としては透明なパッケージを必要としない。
パッケージ１が半導体チップ２を封止する。半導体チップ２の上面にはトランジスタ、ダイオード又は電気回路などの電子部品３が形成されている。パッケージ１は、パッケージ本体４と、キャップ５とを有する。
パッケージ本体４は、セラミックスや樹脂などのパッケージ主材６と、電気配線７とを有する。半導体チップ２の裏面が銀ペースト、金錫はんだ又はエポキシ樹脂などのダイボンド材８によりパッケージ本体４に固定されている。電気配線７は、銅、鉄又はニッケルなどの合金に金、銀又は錫などをメッキしたものであり、パッケージ内部のパッド部と、パッケージ外部に引き出された電極部とを有する。半導体チップ２の電子部品３とパッケージ１の電気配線７のパッド部が金合金又は銅合金などの金属細線９で接続されている。なお、パッケージ１内には抵抗又はキャパシタなど半導体チップ２以外の電子部品を収納してもよい。
キャップ５はエポキシ樹脂などの接着剤１０によりパッケージ本体４に固定され、パッケージ本体４の主面（図１において上面）全体を覆うように構成されている。キャップ５は、可視光（波長３８０ｎｍ〜７８０ｎｍ）に対して不透明であって近赤外光（波長８００ｎｍ〜２５００ｎｍ）又は近紫外光（波長２００ｎｍ〜３８０ｎｍ）に対して透明な透明部である。このため、キャップ５を介してパッケージ１の外側からパッケージ１内の半導体チップ２の電子部品３を観察可能である。本実施の形態では、パッケージ本体４の上面を覆うキャップ５全体が透明部として構成されることで、半導体装置の上面全体が透明部として形成されている。なお、キャップ５は半導体装置の上面全体を覆うことは必ずしも必須ではなく、パッケージ本体４の外形の方が大きくキャップ５がパッケージ本体４の上面の一部を覆うように構成することとしてもよい。さらに、キャップ５はパッケージ本体４の上面だけではなく、側面を覆うことしてもよいし、上面と側面の双方を覆うこととしても構わない。
キャップ５は、例えば、有機色素や無機顔料などを用いた可視光を吸収する可視光吸収材を、透明なエポキシ樹脂や含フッ素化ポリイミドなどの透明基材に混合し硬化させて作製する。
封止された半導体装置に対して照明として近赤外光の光源（例えば波長８９０ｎｍの赤外線ＬＥＤ）を用い赤外線カメラで観察して異物検査を行った後、キャップ５上に電極の方向、製品名又は製造番号などを示すマーク１１を印字する。
本実施の形態ではパッケージ１のキャップ５が可視光に対して不透明であるため、目視や可視光の画像認識によりマーク１１又は傷などのパッケージ１の外観を容易に認識できる。また、キャップ５は近赤外光又は近紫外光に対して透明であるため、パッケージ１の封止後に内部を近赤外光又は近紫外光により観察可能である。従って、封止後の半導体装置内部の異物検査を行うことができる。また、異物検査だけでなく、半導体チップ２が位置ズレしたり割れたりしていないか、配線が曲がっていないか、などの検査も行うことができる。
図２は、本発明の実施の形態１に係るキャップを示す断面図である。キャップ５は、透明樹脂又はガラスの基材１２と、その下面に蒸着やスパッタリングで形成された酸化インジウムスズや酸化亜鉛などの透明導電膜１３と、基材１２の上面にコーティングされた可視光吸収材の膜１４とを有する。透明導電膜１３により、外部から半導体装置内に侵入しようとするマイクロ波又はミリ波といった電磁波がシールドされる。従って、外来の電磁波が半導体装置に侵入して動作に影響を与えるのを抑制でき、例えば出力信号の雑音を低減することができる。
また、キャップ５をパッケージ本体４に固定する接着剤１０として、キャップ５が透明性を示す紫外線で硬化される紫外線硬化樹脂を用いることができる。この場合、パッケージ本体４上に紫外線硬化樹脂とキャップ５を置いた後、キャップ５上方より紫外線を照射して紫外線硬化樹脂を硬化させキャップ５を固定する。これにより、加熱を行うことなく、キャップ５を固定することができる。従って、熱硬化樹脂を使用する場合に比べて低温かつ短時間で封止を完了させることができる。そのため、熱に弱い材料を使用することができ、製造工程のエネルギー消費を削減することもできる。
紫外線硬化樹脂は一般にモノマー、オリゴマー又は光重合開始剤とその他の添加剤で構成される。光を照射されると光重合開始剤がイオンを発生してそのイオンがモノマー又はオリゴマーと重合し、一般に熱硬化樹脂に比べて低温かつ短時間で硬化する。紫外線硬化樹脂にはアクリル系樹脂、エポキシ系樹脂又はシリコーン系樹脂等などがあり容易に市場（スリーボンド製、日立化成製、その他など）から入手できる。なお、接着剤１０として紫外線硬化樹脂に限らず、キャップ５が透明性を示す近赤外光又は近紫外光で硬化される光硬化接着剤を用いることができる。
また、半導体チップ２の側方のパッケージ本体４を透明部としてもよい。この場合は、側方からパッケージ１内部を観察することにより、異物検査の他に、半導体チップ２とパッケージ１の電気配線７を接続する金属細線９の高さ方向の形状や、半導体チップ２の傾きを検査することができる。または、半導体チップ２の下方のパッケージ本体４を透明部としてもよい。この場合は、ダイボンド材８で固定している半導体チップ２の裏面に異物を挟んでいないかを検査することができる。すなわち、透明部は検査対象の電子部品を外部から観察可能となるように配置すればよく、半導体装置の上面、下面、又は側面の少なくとも何れか１つの面全体を透明部として構成することやキャップ５全体を透明部として構成することがより好ましい。
また、キャップ５は、透明の樹脂又はガラスの基材表面に可視光吸収材を塗布などでコーティングして作製してもよい。また、可視光非透過フィルタを市場（ＨＯＹＡ製、シグマ光機製、その他）から入手してキャップ５に適用することもできる。
また、近赤外光の波長で透明なキャップ５の材料として、１μｍ以下の波長では不透明で１．２〜６μｍの波長では透明という特性を持つ単結晶シリコンを用いてもよい。この場合、異物検査の光源に波長１３００〜１６００ｎｍの赤外線ＬＥＤなどを用いてパッケージ１内を検査することができる。
実施の形態２．
図３は、本発明の実施の形態２に係る半導体装置を示す断面図である。本実施の形態のパッケージ１は、半導体チップ２、電気配線７及び金属細線９を封止樹脂１５でモールド成形により覆い固めたものである。封止樹脂１５は、可視光吸収材と透明樹脂を混合したものであり、可視光に対して不透明であって近赤外光又は近紫外光に対して透明な透明部である。この構成でも実施の形態１と同様の効果を得ることができる。
１ パッケージ、２ 半導体チップ、３ 電子部品、４ パッケージ本体、５ キャップ（透明部）、１０ 接着剤、１１ マーク、１５ 封止樹脂（透明部）

Claims (5)

  1. 電子部品を有する半導体チップと、
    前記半導体チップを封止するパッケージとを備え、
    前記パッケージは、可視光に対して不透明であって近赤外光又は近紫外光に対して透明な透明部を有し、
    前記透明部は前記電子部品が外部から前記近赤外光又は前記近紫外光により観察可能となるような位置に配置されることを特徴とする半導体装置。
  2. 前記透明部にマークが印字されていることを特徴とする請求項１に記載の半導体装置。
  3. 前記透明部の少なくとも一部が導電性を有することを特徴とする請求項１又は２に記載の半導体装置。
  4. 前記パッケージは、パッケージ本体と、前記パッケージ本体の少なくとも上面の一部を覆うとともに前記透明部であるキャップとを有し、
    前記キャップは、前記キャップが透明性を示す前記近赤外光又は前記近紫外光で硬化される光硬化接着剤により前記パッケージ本体に固定されていることを特徴とする請求項１〜３の何れか１項に記載の半導体装置。
  5. 前記半導体装置は、マイクロ波通信用高周波信号増幅デバイス、スイッチングデバイス、発振器、及びＭＭＩＣの何れか１つであることを特徴とする請求項１〜４の何れか１項に記載の半導体装置。
JP2015163055A 2015-08-20 2015-08-20 半導体装置 Active JP6477355B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015163055A JP6477355B2 (ja) 2015-08-20 2015-08-20 半導体装置
US15/132,302 US9711460B2 (en) 2015-08-20 2016-04-19 Semiconductor device
TW105112228A TWI671868B (zh) 2015-08-20 2016-04-20 半導體裝置
CN201610694218.0A CN106469686B (zh) 2015-08-20 2016-08-19 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015163055A JP6477355B2 (ja) 2015-08-20 2015-08-20 半導体装置

Publications (2)

Publication Number Publication Date
JP2017041561A true JP2017041561A (ja) 2017-02-23
JP6477355B2 JP6477355B2 (ja) 2019-03-06

Family

ID=58157817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015163055A Active JP6477355B2 (ja) 2015-08-20 2015-08-20 半導体装置

Country Status (4)

Country Link
US (1) US9711460B2 (ja)
JP (1) JP6477355B2 (ja)
CN (1) CN106469686B (ja)
TW (1) TWI671868B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7417029B2 (ja) 2018-12-14 2024-01-18 日亜化学工業株式会社 発光装置及びその製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10535812B2 (en) * 2017-09-04 2020-01-14 Rohm Co., Ltd. Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61162515A (ja) * 1985-01-11 1986-07-23 Nec Corp 樹脂組成物及びそれを用いた樹脂封止型半導体装置
JP2007234763A (ja) * 2006-02-28 2007-09-13 Sharp Corp 半導体装置およびその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3035021B2 (ja) * 1991-08-29 2000-04-17 株式会社リコー 液晶表示素子およびその製造方法
JP2000157702A (ja) 1998-11-24 2000-06-13 Sanyo Bussan:Kk 遊技機制御用ｉｃパッケージ
JP2000254318A (ja) 1999-03-05 2000-09-19 Sankyo Kk 遊技機
JP2002000881A (ja) 2000-06-26 2002-01-08 Toyomaru Industry Co Ltd 遊技機
TW480684B (en) 2001-04-13 2002-03-21 Taiwan Electronic Packaging Co Package of IC chip
US7807972B2 (en) * 2005-01-26 2010-10-05 Analog Devices, Inc. Radiation sensor with cap and optical elements
JP5842118B2 (ja) * 2010-06-24 2016-01-13 パナソニックＩｐマネジメント株式会社 赤外線センサ
US20130050228A1 (en) 2011-08-30 2013-02-28 Qualcomm Mems Technologies, Inc. Glass as a substrate material and a final package for mems and ic devices
US20130293482A1 (en) * 2012-05-04 2013-11-07 Qualcomm Mems Technologies, Inc. Transparent through-glass via
US9161449B2 (en) * 2013-10-29 2015-10-13 Lite-On Technology Corporation Image sensor module having flat material between circuit board and image sensing chip

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61162515A (ja) * 1985-01-11 1986-07-23 Nec Corp 樹脂組成物及びそれを用いた樹脂封止型半導体装置
JP2007234763A (ja) * 2006-02-28 2007-09-13 Sharp Corp 半導体装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7417029B2 (ja) 2018-12-14 2024-01-18 日亜化学工業株式会社 発光装置及びその製造方法

Also Published As

Publication number Publication date
TWI671868B (zh) 2019-09-11
CN106469686A (zh) 2017-03-01
US20170053877A1 (en) 2017-02-23
JP6477355B2 (ja) 2019-03-06
TW201709436A (zh) 2017-03-01
CN106469686B (zh) 2019-05-14
US9711460B2 (en) 2017-07-18

Similar Documents

Publication Publication Date Title
US8946664B2 (en) Optical sensor device having wiring pattern within cavity housing optical sensor element
JP7339164B2 (ja) Ｌｅｄデバイス、及び該ｌｅｄデバイスを含む発光装置
JP5340157B2 (ja) オプトエレクロニクスデバイスのためのハウジング、オプトエレクトロニスクデバイスおよびオプトエレクロニクスデバイスのためのハウジングを製造する方法
US9105771B2 (en) Method for producing at least one optoelectronic semiconductor component
TWI521671B (zh) The package structure of the optical module
US20170047487A1 (en) Optoelectronic modules having features for reducing the visual impact of interior components
JP2011043433A (ja) 光学式測距センサ、および、それを搭載した電子機器
JP6477355B2 (ja) 半導体装置
TWI578491B (zh) 光學感應裝置及光學裝置的製造方法
TWI606571B (zh) 光學感應裝置
JP2017098571A (ja) 光源一体型光センサ
KR101457500B1 (ko) 근접 조도 센서의 제작 방법
US10396111B2 (en) Package for an optical sensor, optical sensor arrangement and method of producing a package for an optical sensor
JP2015060869A (ja) 光結合装置
JP2008235939A (ja) 半導体装置
TWI528512B (zh) Chip package structure and process
CN112216599A (zh) 多次光固化一次蚀刻形成光学挡墙的方法及光学挡墙结构
KR102195081B1 (ko) 지문인식 센서 패키지
KR102277242B1 (ko) Pcb와 구리 합금 기판을 일체화하여 멀티칩 어레이 적용이 가능한 광센서용 기판장치
JP2005072463A (ja) 半導体装置
JP2011193033A (ja) 赤外線データ通信モジュール
JP5908627B2 (ja) 光センサ装置
TWM486862U (zh) 光電元件之封裝體
TW202045967A (zh) 以多次光固化一次蝕刻形成光學擋牆的方法
KR20060069368A (ko) 접촉 이미지 캡쳐 구조

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180202

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20181002

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180928

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20181031

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190108

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190121

R150 Certificate of patent or registration of utility model

Ref document number: 6477355

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250