JP6477355B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6477355B2 JP6477355B2 JP2015163055A JP2015163055A JP6477355B2 JP 6477355 B2 JP6477355 B2 JP 6477355B2 JP 2015163055 A JP2015163055 A JP 2015163055A JP 2015163055 A JP2015163055 A JP 2015163055A JP 6477355 B2 JP6477355 B2 JP 6477355B2
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
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Description
図1は、本発明の実施の形態1に係る半導体装置を示す断面図である。この半導体装置は受光デバイス及び発光デバイスの何れでもなく、例えば、マイクロ波通信用高周波信号増幅デバイス、スイッチングデバイス、発振器、及びMMIC(Monolithic Microwave Integrated Circuit)などである。従って、通常のデバイスの機能としては透明なパッケージを必要としない。
図3は、本発明の実施の形態2に係る半導体装置を示す断面図である。本実施の形態のパッケージ1は、半導体チップ2、電気配線7及び金属細線9を封止樹脂15でモールド成形により覆い固めたものである。封止樹脂15は、可視光吸収材と透明樹脂を混合したものであり、可視光に対して不透明であって近赤外光又は近紫外光に対して透明な透明部である。この構成でも実施の形態1と同様の効果を得ることができる。
Claims (4)
- 電子部品を有する半導体チップと、
前記半導体チップを封止するパッケージとを備え、
前記パッケージは、可視光に対して不透明であって近赤外光又は近紫外光に対して透明な透明部を有し、
前記透明部は前記電子部品が外部から前記近赤外光又は前記近紫外光により観察可能となるような位置に配置され、
前記透明部にマークが印字されていることを特徴とする半導体装置。 - 前記透明部の少なくとも一部が導電性を有することを特徴とする請求項1に記載の半導体装置。
- 電子部品を有する半導体チップと、
前記半導体チップを封止するパッケージとを備え、
前記パッケージは、可視光に対して不透明であって近赤外光又は近紫外光に対して透明な透明部を有し、
前記透明部は前記電子部品が外部から前記近赤外光又は前記近紫外光により観察可能となるような位置に配置され、
前記パッケージは、パッケージ本体と、前記パッケージ本体の少なくとも上面の一部を覆うとともに前記透明部であるキャップとを有し、
前記キャップは、前記キャップが透明性を示す前記近赤外光又は前記近紫外光で硬化される光硬化接着剤により前記パッケージ本体に固定されていることを特徴とする半導体装置。 - 前記半導体装置は、マイクロ波通信用高周波信号増幅デバイス、スイッチングデバイス、発振器、及びMMICの何れか1つであることを特徴とする請求項1〜3の何れか1項に記載の半導体装置。
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JP2015163055A JP6477355B2 (ja) | 2015-08-20 | 2015-08-20 | 半導体装置 |
US15/132,302 US9711460B2 (en) | 2015-08-20 | 2016-04-19 | Semiconductor device |
TW105112228A TWI671868B (zh) | 2015-08-20 | 2016-04-20 | 半導體裝置 |
CN201610694218.0A CN106469686B (zh) | 2015-08-20 | 2016-08-19 | 半导体装置 |
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JP2015163055A JP6477355B2 (ja) | 2015-08-20 | 2015-08-20 | 半導体装置 |
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JPS61162515A (ja) * | 1985-01-11 | 1986-07-23 | Nec Corp | 樹脂組成物及びそれを用いた樹脂封止型半導体装置 |
JP3035021B2 (ja) * | 1991-08-29 | 2000-04-17 | 株式会社リコー | 液晶表示素子およびその製造方法 |
JP2000157702A (ja) | 1998-11-24 | 2000-06-13 | Sanyo Bussan:Kk | 遊技機制御用icパッケージ |
JP2000254318A (ja) | 1999-03-05 | 2000-09-19 | Sankyo Kk | 遊技機 |
JP2002000881A (ja) | 2000-06-26 | 2002-01-08 | Toyomaru Industry Co Ltd | 遊技機 |
TW480684B (en) | 2001-04-13 | 2002-03-21 | Taiwan Electronic Packaging Co | Package of IC chip |
US7807972B2 (en) * | 2005-01-26 | 2010-10-05 | Analog Devices, Inc. | Radiation sensor with cap and optical elements |
JP2007234763A (ja) * | 2006-02-28 | 2007-09-13 | Sharp Corp | 半導体装置およびその製造方法 |
JP5842118B2 (ja) * | 2010-06-24 | 2016-01-13 | パナソニックIpマネジメント株式会社 | 赤外線センサ |
US20130050228A1 (en) | 2011-08-30 | 2013-02-28 | Qualcomm Mems Technologies, Inc. | Glass as a substrate material and a final package for mems and ic devices |
US20130293482A1 (en) * | 2012-05-04 | 2013-11-07 | Qualcomm Mems Technologies, Inc. | Transparent through-glass via |
US9161449B2 (en) * | 2013-10-29 | 2015-10-13 | Lite-On Technology Corporation | Image sensor module having flat material between circuit board and image sensing chip |
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