TWI667779B - 固態成像裝置,固態成像裝置之製造方法及電子設備 - Google Patents

固態成像裝置,固態成像裝置之製造方法及電子設備 Download PDF

Info

Publication number
TWI667779B
TWI667779B TW104111027A TW104111027A TWI667779B TW I667779 B TWI667779 B TW I667779B TW 104111027 A TW104111027 A TW 104111027A TW 104111027 A TW104111027 A TW 104111027A TW I667779 B TWI667779 B TW I667779B
Authority
TW
Taiwan
Prior art keywords
signal processing
pixel
processing circuit
imaging device
solid
Prior art date
Application number
TW104111027A
Other languages
English (en)
Chinese (zh)
Other versions
TW201541622A (zh
Inventor
泉原邦彦
Kunihiko Izuhara
Original Assignee
日商新力股份有限公司
Sony Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商新力股份有限公司, Sony Corporation filed Critical 日商新力股份有限公司
Publication of TW201541622A publication Critical patent/TW201541622A/zh
Application granted granted Critical
Publication of TWI667779B publication Critical patent/TWI667779B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/809Constructional details of image sensors of hybrid image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/199Back-illuminated image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/804Containers or encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/547Dispositions of multiple bond wires
    • H10W72/5473Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW104111027A 2014-04-21 2015-04-02 固態成像裝置,固態成像裝置之製造方法及電子設備 TWI667779B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2014-087603 2014-04-21
JP2014087603 2014-04-21
JP2014-129952 2014-06-25
JP2014129952A JP6245474B2 (ja) 2014-04-21 2014-06-25 固体撮像素子、固体撮像素子の製造方法、並びに、電子機器

Publications (2)

Publication Number Publication Date
TW201541622A TW201541622A (zh) 2015-11-01
TWI667779B true TWI667779B (zh) 2019-08-01

Family

ID=53005615

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104111027A TWI667779B (zh) 2014-04-21 2015-04-02 固態成像裝置,固態成像裝置之製造方法及電子設備

Country Status (7)

Country Link
US (4) US10217785B2 (https=)
EP (2) EP3134918B1 (https=)
JP (1) JP6245474B2 (https=)
KR (5) KR102807159B1 (https=)
CN (2) CN110957339B (https=)
TW (1) TWI667779B (https=)
WO (1) WO2015162867A1 (https=)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6245474B2 (ja) 2014-04-21 2017-12-13 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、並びに、電子機器
KR20180002786A (ko) * 2015-06-05 2018-01-08 애플 인크. 디스플레이 패널에 대한 방출 제어 장치들 및 방법들
KR102376504B1 (ko) * 2015-07-02 2022-03-18 삼성전자주식회사 반도체 소자
US9640108B2 (en) 2015-08-25 2017-05-02 X-Celeprint Limited Bit-plane pulse width modulated digital display system
US9930277B2 (en) * 2015-12-23 2018-03-27 X-Celeprint Limited Serial row-select matrix-addressed system
US10091446B2 (en) 2015-12-23 2018-10-02 X-Celeprint Limited Active-matrix displays with common pixel control
US9928771B2 (en) 2015-12-24 2018-03-27 X-Celeprint Limited Distributed pulse width modulation control
WO2017149845A1 (ja) * 2016-02-29 2017-09-08 ソニー株式会社 半導体装置
JP6494551B2 (ja) 2016-03-28 2019-04-03 アンリツ株式会社 電界強度分布測定装置及び電界強度分布測定方法
JP2017183658A (ja) 2016-03-31 2017-10-05 ソニー株式会社 固体撮像素子、撮像装置、および電子機器
JP6919154B2 (ja) 2016-03-31 2021-08-18 ソニーグループ株式会社 固体撮像素子、撮像装置、および電子機器
US10360846B2 (en) 2016-05-10 2019-07-23 X-Celeprint Limited Distributed pulse-width modulation system with multi-bit digital storage and output device
US10453826B2 (en) 2016-06-03 2019-10-22 X-Celeprint Limited Voltage-balanced serial iLED pixel and display
CN106454162B (zh) * 2016-09-06 2019-05-31 豪威科技(上海)有限公司 堆栈式cmos图像传感器及其制造方法
JP7055544B2 (ja) * 2016-11-29 2022-04-18 ソニーセミコンダクタソリューションズ株式会社 センサチップおよび電子機器
JP2018101966A (ja) * 2016-12-22 2018-06-28 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、電子機器、および、固体撮像素子の制御方法
US10832609B2 (en) * 2017-01-10 2020-11-10 X Display Company Technology Limited Digital-drive pulse-width-modulated output system
US10070090B2 (en) * 2017-02-03 2018-09-04 SmartSens Technology (U.S.), Inc. Stacked image sensor pixel cell with selectable shutter modes and in-pixel CDS
JP6928746B2 (ja) * 2017-04-10 2021-09-01 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の製造方法、および電子機器
EP3646381B1 (en) 2017-06-29 2023-05-31 Sony Semiconductor Solutions Corporation Wafer bonded back illuminated imager
TWI649864B (zh) * 2017-06-30 2019-02-01 香港商京鷹科技股份有限公司 影像感測裝置及影像感測方法
KR102356913B1 (ko) * 2017-07-03 2022-02-03 에스케이하이닉스 주식회사 이미지 센서
JP7102119B2 (ja) * 2017-09-29 2022-07-19 キヤノン株式会社 半導体装置および機器
CN111034175B (zh) * 2017-10-03 2022-09-23 索尼半导体解决方案公司 成像装置
TWI905469B (zh) 2017-10-30 2025-11-21 日商索尼半導體解決方案公司 固體攝像裝置及電子機器
US10529768B2 (en) 2017-12-15 2020-01-07 Atomera Incorporated Method for making CMOS image sensor including pixels with read circuitry having a superlattice
US10367028B2 (en) 2017-12-15 2019-07-30 Atomera Incorporated CMOS image sensor including stacked semiconductor chips and image processing circuitry including a superlattice
US10529757B2 (en) 2017-12-15 2020-01-07 Atomera Incorporated CMOS image sensor including pixels with read circuitry having a superlattice
US10615209B2 (en) * 2017-12-15 2020-04-07 Atomera Incorporated CMOS image sensor including stacked semiconductor chips and readout circuitry including a superlattice
WO2019118840A1 (en) * 2017-12-15 2019-06-20 Atomera Incorporated Cmos image sensor including stacked semiconductor chips and readout circuitry including a superlattice and related methods
US10608027B2 (en) 2017-12-15 2020-03-31 Atomera Incorporated Method for making CMOS image sensor including stacked semiconductor chips and image processing circuitry including a superlattice
US10608043B2 (en) 2017-12-15 2020-03-31 Atomera Incorporation Method for making CMOS image sensor including stacked semiconductor chips and readout circuitry including a superlattice
JP2019165312A (ja) * 2018-03-19 2019-09-26 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器
JP2019179782A (ja) * 2018-03-30 2019-10-17 ソニーセミコンダクタソリューションズ株式会社 半導体装置および半導体装置の製造方法
JP2020047734A (ja) * 2018-09-18 2020-03-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
JP7452962B2 (ja) * 2018-11-16 2024-03-19 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JP7292860B2 (ja) * 2018-11-22 2023-06-19 キヤノン株式会社 光電変換装置
KR102558301B1 (ko) * 2018-12-13 2023-07-24 에스케이하이닉스 주식회사 유기 픽셀 어레이 및 무기 픽셀 어레이를 갖는 이미지 센싱 디바이스
TWI872085B (zh) * 2019-06-26 2025-02-11 日商索尼半導體解決方案公司 攝像裝置
CN120676266A (zh) * 2019-11-01 2025-09-19 索尼半导体解决方案公司 固态摄像装置
JP7523904B2 (ja) 2019-12-27 2024-07-29 キヤノン株式会社 検査装置および半導体装置の製造方法
JP7583562B2 (ja) * 2020-09-11 2024-11-14 キヤノン株式会社 光電変換装置及び撮像システム
JP2021061618A (ja) * 2020-12-15 2021-04-15 株式会社ニコン 撮像素子および撮像装置
JP7646380B2 (ja) 2021-02-04 2025-03-17 キヤノン株式会社 光電変換装置、光電変換システム、移動体
JP7534743B2 (ja) * 2021-03-11 2024-08-15 国立大学法人静岡大学 放射線撮像装置
WO2023132002A1 (ja) * 2022-01-05 2023-07-13 キヤノン株式会社 光電変換装置、光電変換システム、移動体
JP2024003462A (ja) 2022-06-27 2024-01-15 キヤノン株式会社 撮像素子及び撮像装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012155142A1 (en) * 2011-05-12 2012-11-15 Olive Medical Corporation Pixel array area optimization using stacking scheme for hybrid image sensor with minimal vertical interconnects
US20130215309A1 (en) * 2012-02-21 2013-08-22 Sony Corporation Solid-state imaging device and manufacturing method thereof, and camera system

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4497844A (en) 1980-08-18 1985-02-05 Fryday Corporation Method for producing a restructured food product
JP2902506B2 (ja) 1990-08-24 1999-06-07 キヤノン株式会社 半導体装置の製造方法及び半導体装置
JP4497844B2 (ja) 2003-05-30 2010-07-07 キヤノン株式会社 固体撮像装置の製造方法
JP4816457B2 (ja) * 2004-09-02 2011-11-16 ソニー株式会社 撮像装置及び撮像結果の出力方法
JP4277216B2 (ja) * 2005-01-13 2009-06-10 ソニー株式会社 撮像装置及び撮像結果の処理方法
JP4979893B2 (ja) * 2005-03-23 2012-07-18 ソニー株式会社 物理量分布検知装置並びに物理情報取得方法および物理情報取得装置
TW200913238A (en) * 2007-06-04 2009-03-16 Sony Corp Optical member, solid state imaging apparatus, and manufacturing method
JP5820979B2 (ja) * 2008-12-26 2015-11-24 パナソニックIpマネジメント株式会社 固体撮像デバイス
JP5521721B2 (ja) * 2009-08-28 2014-06-18 ソニー株式会社 撮像素子およびカメラシステム
EP3514831B1 (en) * 2009-12-26 2021-10-13 Canon Kabushiki Kaisha Solid-state image pickup apparatus and image pickup system
JP5696513B2 (ja) * 2011-02-08 2015-04-08 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5953974B2 (ja) * 2011-09-15 2016-07-20 富士通セミコンダクター株式会社 半導体装置及び半導体装置の製造方法
JP2013182943A (ja) * 2012-02-29 2013-09-12 Canon Inc 固体撮像装置の製造方法
JP2013197113A (ja) * 2012-03-15 2013-09-30 Sony Corp 固体撮像装置およびカメラシステム
US8878325B2 (en) * 2012-07-31 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Elevated photodiode with a stacked scheme
TWI595637B (zh) * 2012-09-28 2017-08-11 新力股份有限公司 半導體裝置及電子機器
JP6245474B2 (ja) 2014-04-21 2017-12-13 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、並びに、電子機器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012155142A1 (en) * 2011-05-12 2012-11-15 Olive Medical Corporation Pixel array area optimization using stacking scheme for hybrid image sensor with minimal vertical interconnects
US20130215309A1 (en) * 2012-02-21 2013-08-22 Sony Corporation Solid-state imaging device and manufacturing method thereof, and camera system

Also Published As

Publication number Publication date
US10811454B2 (en) 2020-10-20
KR102383181B1 (ko) 2022-04-06
US10217785B2 (en) 2019-02-26
KR102506010B1 (ko) 2023-03-06
US20200403020A1 (en) 2020-12-24
CN110957339A (zh) 2020-04-03
KR102807159B1 (ko) 2025-05-14
CN110957339B (zh) 2024-02-13
CN105940493A (zh) 2016-09-14
EP3565001A1 (en) 2019-11-06
WO2015162867A1 (en) 2015-10-29
JP2015216334A (ja) 2015-12-03
US20170040371A1 (en) 2017-02-09
TW201541622A (zh) 2015-11-01
KR102678404B1 (ko) 2024-06-27
EP3134918B1 (en) 2019-06-19
CN105940493B (zh) 2019-12-17
KR20230035463A (ko) 2023-03-13
KR20160145577A (ko) 2016-12-20
JP6245474B2 (ja) 2017-12-13
KR20250069695A (ko) 2025-05-19
US12046619B2 (en) 2024-07-23
US20190189666A1 (en) 2019-06-20
KR20240100469A (ko) 2024-07-01
KR20220042251A (ko) 2022-04-04
US20240332336A1 (en) 2024-10-03
EP3134918A1 (en) 2017-03-01
EP3565001B1 (en) 2022-07-20

Similar Documents

Publication Publication Date Title
TWI667779B (zh) 固態成像裝置,固態成像裝置之製造方法及電子設備
US20190181170A1 (en) Solid state imaging device and electronic apparatus
TWI501595B (zh) 半導體積體電路、電子器件、固態成像裝置及成像裝置
KR102545845B1 (ko) 반도체 장치 및 전자 기기
JP2014225536A (ja) 固体撮像装置及びカメラ
US11165979B2 (en) Imaging device including semiconductor substrate and pixels
JP7354315B2 (ja) 固体撮像素子及び電子機器
CN103367377B (zh) 固态成像装置和电子设备
JP2015185823A (ja) 固体撮像素子、及び、撮像装置
WO2013051451A1 (ja) 固体撮像素子および電子機器
CN108696701B (zh) 图像传感器
US20180294303A1 (en) Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus
KR20210046102A (ko) 이미지 센서

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees