TWI662094B - 塗佈液、太陽能電池用光吸收層及太陽能電池、以及其之製造方法 - Google Patents

塗佈液、太陽能電池用光吸收層及太陽能電池、以及其之製造方法 Download PDF

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Publication number
TWI662094B
TWI662094B TW104119415A TW104119415A TWI662094B TW I662094 B TWI662094 B TW I662094B TW 104119415 A TW104119415 A TW 104119415A TW 104119415 A TW104119415 A TW 104119415A TW I662094 B TWI662094 B TW I662094B
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TW
Taiwan
Prior art keywords
group
metal
compound
solar cell
coating liquid
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TW104119415A
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English (en)
Chinese (zh)
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TW201617414A (zh
Inventor
飯田啓之
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日商東京應化工業股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0326—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Paints Or Removers (AREA)
TW104119415A 2014-08-21 2015-06-16 塗佈液、太陽能電池用光吸收層及太陽能電池、以及其之製造方法 TWI662094B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-168464 2014-08-21
JP2014168464A JP6373124B2 (ja) 2014-08-21 2014-08-21 塗布液、太陽電池用光吸収層および太陽電池、ならびにその製造方法

Publications (2)

Publication Number Publication Date
TW201617414A TW201617414A (zh) 2016-05-16
TWI662094B true TWI662094B (zh) 2019-06-11

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TW104119415A TWI662094B (zh) 2014-08-21 2015-06-16 塗佈液、太陽能電池用光吸收層及太陽能電池、以及其之製造方法

Country Status (3)

Country Link
JP (1) JP6373124B2 (ja)
CN (1) CN105390557B (ja)
TW (1) TWI662094B (ja)

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* Cited by examiner, † Cited by third party
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JP2019087745A (ja) * 2017-11-08 2019-06-06 東京応化工業株式会社 均一系塗布液及びその製造方法
CN110273144A (zh) * 2018-03-14 2019-09-24 北京铂阳顶荣光伏科技有限公司 化学水浴沉积方法和cigs光伏组件的制备方法
CN109148625A (zh) * 2018-05-17 2019-01-04 中国科学院物理研究所 铜锌锡硫硒薄膜太阳能电池及其制备方法
CN112185806A (zh) * 2020-10-16 2021-01-05 江苏佳佳新能源有限公司 一种太阳能电池吸收层薄膜制造方法
CN114388660A (zh) * 2022-01-13 2022-04-22 黑龙江工业学院 一种降低CZTSSe薄膜中小晶粒层的方法

Citations (3)

* Cited by examiner, † Cited by third party
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TW201036175A (en) * 2009-03-19 2010-10-01 Univ Nat Taiwan Light absorbing layers, precursor solution and fabrication method thereof, and solar cell comprising the same
KR20130011503A (ko) * 2011-07-21 2013-01-30 한양대학교 산학협력단 태양전지용 광흡수층 제조방법, 이를 포함하는 태양전지 및 이의 제조방법
TW201522207A (zh) * 2013-08-01 2015-06-16 Lg Chemical Ltd 用於製造太陽能電池之光吸收層的金屬硫族化合物奈米粒子及其製造方法

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JPH07215704A (ja) * 1994-02-02 1995-08-15 Yamaha Corp １ｂ−３ｂ−６ｂ族化合物薄膜の製造方法
JP5511320B2 (ja) * 2008-11-11 2014-06-04 京セラ株式会社 薄膜太陽電池の製法
WO2011045989A1 (ja) * 2009-10-12 2011-04-21 学校法人龍谷大学 化合物半導体薄膜の製造方法、太陽電池および化合物半導体薄膜製造装置
JP2011151328A (ja) * 2010-01-25 2011-08-04 Toda Kogyo Corp ｐ型化合物半導体層の製造方法及び化合物薄膜太陽電池セル
JP5867392B2 (ja) * 2010-08-17 2016-02-24 凸版印刷株式会社 化合物半導体薄膜作製用インクおよび太陽電池の製造方法
EP2617064A4 (en) * 2010-09-15 2014-07-09 Precursor Energetics Inc METHOD AND DEVICES FOR DEPOSITION FOR PHOTOVOLTAIC ELEMENTS
US8499916B2 (en) * 2011-07-14 2013-08-06 Warner Electric Technology Llc Rotational coupling device with flux leakage path insulator
KR101311030B1 (ko) * 2011-11-24 2013-09-24 연세대학교 산학협력단 Ｃｚｔｓ 박막용 하이브리드 잉크
CN103975442B (zh) * 2011-11-30 2016-10-19 柯尼卡美能达美国研究所有限公司 用于光伏器件的涂布液及其使用方法
CN103296130A (zh) * 2012-03-05 2013-09-11 任丘市永基光电太阳能有限公司 一种柔性不锈钢衬底上CIGS吸收层的Na掺杂方法
TWI586773B (zh) * 2012-07-26 2017-06-11 東京應化工業股份有限公司 光吸收層形成用塗佈液之製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201036175A (en) * 2009-03-19 2010-10-01 Univ Nat Taiwan Light absorbing layers, precursor solution and fabrication method thereof, and solar cell comprising the same
KR20130011503A (ko) * 2011-07-21 2013-01-30 한양대학교 산학협력단 태양전지용 광흡수층 제조방법, 이를 포함하는 태양전지 및 이의 제조방법
TW201522207A (zh) * 2013-08-01 2015-06-16 Lg Chemical Ltd 用於製造太陽能電池之光吸收層的金屬硫族化合物奈米粒子及其製造方法

Also Published As

Publication number Publication date
CN105390557A (zh) 2016-03-09
CN105390557B (zh) 2020-02-04
JP6373124B2 (ja) 2018-08-15
TW201617414A (zh) 2016-05-16
JP2016044217A (ja) 2016-04-04

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