TWI660432B - 改善金氧半導體層之導電性的方法 - Google Patents

改善金氧半導體層之導電性的方法 Download PDF

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Publication number
TWI660432B
TWI660432B TW103120479A TW103120479A TWI660432B TW I660432 B TWI660432 B TW I660432B TW 103120479 A TW103120479 A TW 103120479A TW 103120479 A TW103120479 A TW 103120479A TW I660432 B TWI660432 B TW I660432B
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TW
Taiwan
Prior art keywords
layer
gold
oxide semiconductor
metal oxide
semiconductor layer
Prior art date
Application number
TW103120479A
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English (en)
Chinese (zh)
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TW201508841A (zh
Inventor
馬諾伊 南格
艾潔 布胡路坎
羅伯特 牧樂
Original Assignee
愛美科公司
荷蘭應用自然科學研究組織
比利時魯汶天主教大學
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Application filed by 愛美科公司, 荷蘭應用自然科學研究組織, 比利時魯汶天主教大學 filed Critical 愛美科公司
Publication of TW201508841A publication Critical patent/TW201508841A/zh
Application granted granted Critical
Publication of TWI660432B publication Critical patent/TWI660432B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

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  • Thin Film Transistor (AREA)
TW103120479A 2013-07-24 2014-06-13 改善金氧半導體層之導電性的方法 TWI660432B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP13177735 2013-07-24
??13177735.1 2013-07-24

Publications (2)

Publication Number Publication Date
TW201508841A TW201508841A (zh) 2015-03-01
TWI660432B true TWI660432B (zh) 2019-05-21

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TW103120479A TWI660432B (zh) 2013-07-24 2014-06-13 改善金氧半導體層之導電性的方法

Country Status (5)

Country Link
JP (1) JP6426177B2 (https=)
KR (1) KR20160034262A (https=)
CN (1) CN105409003B (https=)
TW (1) TWI660432B (https=)
WO (1) WO2015010825A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI613706B (zh) * 2015-07-03 2018-02-01 Au Optronics Corp. 氧化物半導體薄膜電晶體及其製作方法
EP3136446A1 (en) 2015-08-28 2017-03-01 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Tft device and manufacturing method
US20200035717A1 (en) * 2018-07-26 2020-01-30 Sharp Kabushiki Kaisha Thin film transistor substrate and method of producing thin film transistor substrate
JP2021128978A (ja) * 2020-02-12 2021-09-02 株式会社ジャパンディスプレイ 半導体装置及びその製造方法
KR20230061713A (ko) 2021-10-29 2023-05-09 (주) 예스티 금속 산화물을 위한 고압 열처리 방법
KR102697352B1 (ko) * 2021-12-06 2024-08-21 연세대학교 산학협력단 산화물 박막 트랜지스터의 제조 방법
WO2025250330A1 (en) * 2024-05-31 2025-12-04 Applied Materials, Inc. Thin film transistor structures

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080277658A1 (en) * 2007-05-11 2008-11-13 Hun-Jung Lee Thin film transistor, method of manufacturing the same, organic light emitting display apparatus comprising the thin film transistor, and method of manufacturing the same
US20090230389A1 (en) * 2008-03-17 2009-09-17 Zhizhang Chen Atomic Layer Deposition of Gate Dielectric Layer with High Dielectric Constant for Thin Film Transisitor
US20110095288A1 (en) * 2008-07-03 2011-04-28 Sony Corporation Thin film transistor and display device
TW201232786A (en) * 2010-12-30 2012-08-01 Jusung Eng Co Ltd Thin film transistor and method of manufacturing the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5708910B2 (ja) * 2010-03-30 2015-04-30 ソニー株式会社 薄膜トランジスタおよびその製造方法、並びに表示装置
JP5604938B2 (ja) * 2010-03-31 2014-10-15 凸版印刷株式会社 薄膜トランジスタ及びその製造方法
JP2012015436A (ja) 2010-07-05 2012-01-19 Sony Corp 薄膜トランジスタおよび表示装置
US8716073B2 (en) * 2011-07-22 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor film and method for manufacturing semiconductor device
CN102969362B (zh) * 2011-09-01 2016-03-30 中国科学院微电子研究所 高稳定性非晶态金属氧化物tft器件

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080277658A1 (en) * 2007-05-11 2008-11-13 Hun-Jung Lee Thin film transistor, method of manufacturing the same, organic light emitting display apparatus comprising the thin film transistor, and method of manufacturing the same
US20090230389A1 (en) * 2008-03-17 2009-09-17 Zhizhang Chen Atomic Layer Deposition of Gate Dielectric Layer with High Dielectric Constant for Thin Film Transisitor
US20110095288A1 (en) * 2008-07-03 2011-04-28 Sony Corporation Thin film transistor and display device
TW201232786A (en) * 2010-12-30 2012-08-01 Jusung Eng Co Ltd Thin film transistor and method of manufacturing the same

Also Published As

Publication number Publication date
TW201508841A (zh) 2015-03-01
CN105409003A (zh) 2016-03-16
JP6426177B2 (ja) 2018-11-21
CN105409003B (zh) 2019-03-08
KR20160034262A (ko) 2016-03-29
WO2015010825A1 (en) 2015-01-29
JP2016527719A (ja) 2016-09-08

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