JP6426177B2 - 金属酸化物半導体薄膜トランジスタの製造方法 - Google Patents

金属酸化物半導体薄膜トランジスタの製造方法 Download PDF

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JP6426177B2
JP6426177B2 JP2016528381A JP2016528381A JP6426177B2 JP 6426177 B2 JP6426177 B2 JP 6426177B2 JP 2016528381 A JP2016528381 A JP 2016528381A JP 2016528381 A JP2016528381 A JP 2016528381A JP 6426177 B2 JP6426177 B2 JP 6426177B2
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metal oxide
layer
oxide semiconductor
semiconductor layer
gate
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JP2016528381A
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Japanese (ja)
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JP2016527719A5 (https=
JP2016527719A (ja
Inventor
マノジ・ナグ
アジャイ・サムパス・ブーロカム
ヨハン・ミュラー
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Katholieke Universiteit Leuven
Interuniversitair Microelektronica Centrum vzw IMEC
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Katholieke Universiteit Leuven
Interuniversitair Microelektronica Centrum vzw IMEC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

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  • Thin Film Transistor (AREA)
JP2016528381A 2013-07-24 2014-06-11 金属酸化物半導体薄膜トランジスタの製造方法 Expired - Fee Related JP6426177B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13177735.1 2013-07-24
EP13177735 2013-07-24
PCT/EP2014/062120 WO2015010825A1 (en) 2013-07-24 2014-06-11 Method for improving the electrical conductivity of metal oxide semiconductor layers

Publications (3)

Publication Number Publication Date
JP2016527719A JP2016527719A (ja) 2016-09-08
JP2016527719A5 JP2016527719A5 (https=) 2017-04-20
JP6426177B2 true JP6426177B2 (ja) 2018-11-21

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JP2016528381A Expired - Fee Related JP6426177B2 (ja) 2013-07-24 2014-06-11 金属酸化物半導体薄膜トランジスタの製造方法

Country Status (5)

Country Link
JP (1) JP6426177B2 (https=)
KR (1) KR20160034262A (https=)
CN (1) CN105409003B (https=)
TW (1) TWI660432B (https=)
WO (1) WO2015010825A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI613706B (zh) * 2015-07-03 2018-02-01 Au Optronics Corp. 氧化物半導體薄膜電晶體及其製作方法
EP3136446A1 (en) 2015-08-28 2017-03-01 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Tft device and manufacturing method
US20200035717A1 (en) * 2018-07-26 2020-01-30 Sharp Kabushiki Kaisha Thin film transistor substrate and method of producing thin film transistor substrate
JP2021128978A (ja) * 2020-02-12 2021-09-02 株式会社ジャパンディスプレイ 半導体装置及びその製造方法
KR20230061713A (ko) 2021-10-29 2023-05-09 (주) 예스티 금속 산화물을 위한 고압 열처리 방법
KR102697352B1 (ko) * 2021-12-06 2024-08-21 연세대학교 산학협력단 산화물 박막 트랜지스터의 제조 방법
WO2025250330A1 (en) * 2024-05-31 2025-12-04 Applied Materials, Inc. Thin film transistor structures

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100858821B1 (ko) * 2007-05-11 2008-09-17 삼성에스디아이 주식회사 박막 트랜지스터와 그 제조 방법 및 상기 박막트랜지스터를 포함하는 유기 발광 표시 장치와 그 제조방법
US20090230389A1 (en) * 2008-03-17 2009-09-17 Zhizhang Chen Atomic Layer Deposition of Gate Dielectric Layer with High Dielectric Constant for Thin Film Transisitor
JP5584960B2 (ja) * 2008-07-03 2014-09-10 ソニー株式会社 薄膜トランジスタおよび表示装置
JP5708910B2 (ja) * 2010-03-30 2015-04-30 ソニー株式会社 薄膜トランジスタおよびその製造方法、並びに表示装置
JP5604938B2 (ja) * 2010-03-31 2014-10-15 凸版印刷株式会社 薄膜トランジスタ及びその製造方法
JP2012015436A (ja) 2010-07-05 2012-01-19 Sony Corp 薄膜トランジスタおよび表示装置
JP2014507794A (ja) * 2010-12-30 2014-03-27 ジュスン エンジニアリング カンパニー リミテッド 薄膜トランジスタ及びその製造方法
US8716073B2 (en) * 2011-07-22 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor film and method for manufacturing semiconductor device
CN102969362B (zh) * 2011-09-01 2016-03-30 中国科学院微电子研究所 高稳定性非晶态金属氧化物tft器件

Also Published As

Publication number Publication date
TW201508841A (zh) 2015-03-01
CN105409003A (zh) 2016-03-16
TWI660432B (zh) 2019-05-21
CN105409003B (zh) 2019-03-08
KR20160034262A (ko) 2016-03-29
WO2015010825A1 (en) 2015-01-29
JP2016527719A (ja) 2016-09-08

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