KR20160034262A - 금속 산화물 반도체층의 전기전도도의 개선 방법 - Google Patents

금속 산화물 반도체층의 전기전도도의 개선 방법 Download PDF

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Publication number
KR20160034262A
KR20160034262A KR1020157037203A KR20157037203A KR20160034262A KR 20160034262 A KR20160034262 A KR 20160034262A KR 1020157037203 A KR1020157037203 A KR 1020157037203A KR 20157037203 A KR20157037203 A KR 20157037203A KR 20160034262 A KR20160034262 A KR 20160034262A
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KR
South Korea
Prior art keywords
metal oxide
layer
oxide semiconductor
semiconductor layer
gate
Prior art date
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Abandoned
Application number
KR1020157037203A
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English (en)
Korean (ko)
Inventor
만노즈 내그
아자이 삼파트 브호로감
요한 뮐러
Original Assignee
아이엠이씨 브이제트더블유
카톨리에케 유니버시테이트 루벤
네덜란제 오르가니자티에 포오르 토에게파스트-나투우르베텐샤펠리즈크 온데르조에크 테엔오
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Filing date
Publication date
Application filed by 아이엠이씨 브이제트더블유, 카톨리에케 유니버시테이트 루벤, 네덜란제 오르가니자티에 포오르 토에게파스트-나투우르베텐샤펠리즈크 온데르조에크 테엔오 filed Critical 아이엠이씨 브이제트더블유
Publication of KR20160034262A publication Critical patent/KR20160034262A/ko
Abandoned legal-status Critical Current

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    • H01L29/66742—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H01L21/02172—
    • H01L21/28194—
    • H01L29/517—
    • H01L29/78618—
    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H01L2251/303—
    • H01L2924/05432—

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  • Thin Film Transistor (AREA)
KR1020157037203A 2013-07-24 2014-06-11 금속 산화물 반도체층의 전기전도도의 개선 방법 Abandoned KR20160034262A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13177735.1 2013-07-24
EP13177735 2013-07-24
PCT/EP2014/062120 WO2015010825A1 (en) 2013-07-24 2014-06-11 Method for improving the electrical conductivity of metal oxide semiconductor layers

Publications (1)

Publication Number Publication Date
KR20160034262A true KR20160034262A (ko) 2016-03-29

Family

ID=48856533

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157037203A Abandoned KR20160034262A (ko) 2013-07-24 2014-06-11 금속 산화물 반도체층의 전기전도도의 개선 방법

Country Status (5)

Country Link
JP (1) JP6426177B2 (https=)
KR (1) KR20160034262A (https=)
CN (1) CN105409003B (https=)
TW (1) TWI660432B (https=)
WO (1) WO2015010825A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230061713A (ko) 2021-10-29 2023-05-09 (주) 예스티 금속 산화물을 위한 고압 열처리 방법
KR20230084682A (ko) * 2021-12-06 2023-06-13 연세대학교 산학협력단 산화물 박막 트랜지스터의 제조 방법

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI613706B (zh) * 2015-07-03 2018-02-01 Au Optronics Corp. 氧化物半導體薄膜電晶體及其製作方法
EP3136446A1 (en) 2015-08-28 2017-03-01 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Tft device and manufacturing method
US20200035717A1 (en) * 2018-07-26 2020-01-30 Sharp Kabushiki Kaisha Thin film transistor substrate and method of producing thin film transistor substrate
JP2021128978A (ja) * 2020-02-12 2021-09-02 株式会社ジャパンディスプレイ 半導体装置及びその製造方法
WO2025250330A1 (en) * 2024-05-31 2025-12-04 Applied Materials, Inc. Thin film transistor structures

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100858821B1 (ko) * 2007-05-11 2008-09-17 삼성에스디아이 주식회사 박막 트랜지스터와 그 제조 방법 및 상기 박막트랜지스터를 포함하는 유기 발광 표시 장치와 그 제조방법
US20090230389A1 (en) * 2008-03-17 2009-09-17 Zhizhang Chen Atomic Layer Deposition of Gate Dielectric Layer with High Dielectric Constant for Thin Film Transisitor
JP5584960B2 (ja) * 2008-07-03 2014-09-10 ソニー株式会社 薄膜トランジスタおよび表示装置
JP5708910B2 (ja) * 2010-03-30 2015-04-30 ソニー株式会社 薄膜トランジスタおよびその製造方法、並びに表示装置
JP5604938B2 (ja) * 2010-03-31 2014-10-15 凸版印刷株式会社 薄膜トランジスタ及びその製造方法
JP2012015436A (ja) 2010-07-05 2012-01-19 Sony Corp 薄膜トランジスタおよび表示装置
JP2014507794A (ja) * 2010-12-30 2014-03-27 ジュスン エンジニアリング カンパニー リミテッド 薄膜トランジスタ及びその製造方法
US8716073B2 (en) * 2011-07-22 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor film and method for manufacturing semiconductor device
CN102969362B (zh) * 2011-09-01 2016-03-30 中国科学院微电子研究所 高稳定性非晶态金属氧化物tft器件

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230061713A (ko) 2021-10-29 2023-05-09 (주) 예스티 금속 산화물을 위한 고압 열처리 방법
KR20230084682A (ko) * 2021-12-06 2023-06-13 연세대학교 산학협력단 산화물 박막 트랜지스터의 제조 방법

Also Published As

Publication number Publication date
TW201508841A (zh) 2015-03-01
CN105409003A (zh) 2016-03-16
JP6426177B2 (ja) 2018-11-21
TWI660432B (zh) 2019-05-21
CN105409003B (zh) 2019-03-08
WO2015010825A1 (en) 2015-01-29
JP2016527719A (ja) 2016-09-08

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