CN105409003B - 用于改善金属氧化物半导体层的导电率的方法 - Google Patents

用于改善金属氧化物半导体层的导电率的方法 Download PDF

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Publication number
CN105409003B
CN105409003B CN201480041709.4A CN201480041709A CN105409003B CN 105409003 B CN105409003 B CN 105409003B CN 201480041709 A CN201480041709 A CN 201480041709A CN 105409003 B CN105409003 B CN 105409003B
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CN
China
Prior art keywords
metal oxide
layer
oxide semiconductor
semiconductor layer
metal
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Expired - Fee Related
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CN201480041709.4A
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English (en)
Chinese (zh)
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CN105409003A (zh
Inventor
M·纳格
A·布罗卡姆
R·穆勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Netherlands Organization For Applied Scientific Research
Katholieke Universiteit Leuven
Interuniversitair Microelektronica Centrum vzw IMEC
Original Assignee
Netherlands Organization For Applied Scientific Research
Katholieke Universiteit Leuven
Interuniversitair Microelektronica Centrum vzw IMEC
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Publication of CN105409003A publication Critical patent/CN105409003A/zh
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Publication of CN105409003B publication Critical patent/CN105409003B/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

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  • Thin Film Transistor (AREA)
CN201480041709.4A 2013-07-24 2014-06-11 用于改善金属氧化物半导体层的导电率的方法 Expired - Fee Related CN105409003B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13177735.1 2013-07-24
EP13177735 2013-07-24
PCT/EP2014/062120 WO2015010825A1 (en) 2013-07-24 2014-06-11 Method for improving the electrical conductivity of metal oxide semiconductor layers

Publications (2)

Publication Number Publication Date
CN105409003A CN105409003A (zh) 2016-03-16
CN105409003B true CN105409003B (zh) 2019-03-08

Family

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Family Applications (1)

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CN201480041709.4A Expired - Fee Related CN105409003B (zh) 2013-07-24 2014-06-11 用于改善金属氧化物半导体层的导电率的方法

Country Status (5)

Country Link
JP (1) JP6426177B2 (https=)
KR (1) KR20160034262A (https=)
CN (1) CN105409003B (https=)
TW (1) TWI660432B (https=)
WO (1) WO2015010825A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI613706B (zh) * 2015-07-03 2018-02-01 Au Optronics Corp. 氧化物半導體薄膜電晶體及其製作方法
EP3136446A1 (en) 2015-08-28 2017-03-01 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Tft device and manufacturing method
US20200035717A1 (en) * 2018-07-26 2020-01-30 Sharp Kabushiki Kaisha Thin film transistor substrate and method of producing thin film transistor substrate
JP2021128978A (ja) * 2020-02-12 2021-09-02 株式会社ジャパンディスプレイ 半導体装置及びその製造方法
KR20230061713A (ko) 2021-10-29 2023-05-09 (주) 예스티 금속 산화물을 위한 고압 열처리 방법
KR102697352B1 (ko) * 2021-12-06 2024-08-21 연세대학교 산학협력단 산화물 박막 트랜지스터의 제조 방법
WO2025250330A1 (en) * 2024-05-31 2025-12-04 Applied Materials, Inc. Thin film transistor structures

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090230389A1 (en) * 2008-03-17 2009-09-17 Zhizhang Chen Atomic Layer Deposition of Gate Dielectric Layer with High Dielectric Constant for Thin Film Transisitor
CN102084486A (zh) * 2008-07-03 2011-06-01 索尼公司 薄膜晶体管及显示装置
CN102315277A (zh) * 2010-07-05 2012-01-11 索尼公司 薄膜晶体管和显示装置
CN102969362A (zh) * 2011-09-01 2013-03-13 中国科学院微电子研究所 高稳定性非晶态金属氧化物tft器件

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100858821B1 (ko) * 2007-05-11 2008-09-17 삼성에스디아이 주식회사 박막 트랜지스터와 그 제조 방법 및 상기 박막트랜지스터를 포함하는 유기 발광 표시 장치와 그 제조방법
JP5708910B2 (ja) * 2010-03-30 2015-04-30 ソニー株式会社 薄膜トランジスタおよびその製造方法、並びに表示装置
JP5604938B2 (ja) * 2010-03-31 2014-10-15 凸版印刷株式会社 薄膜トランジスタ及びその製造方法
JP2014507794A (ja) * 2010-12-30 2014-03-27 ジュスン エンジニアリング カンパニー リミテッド 薄膜トランジスタ及びその製造方法
US8716073B2 (en) * 2011-07-22 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor film and method for manufacturing semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090230389A1 (en) * 2008-03-17 2009-09-17 Zhizhang Chen Atomic Layer Deposition of Gate Dielectric Layer with High Dielectric Constant for Thin Film Transisitor
CN102084486A (zh) * 2008-07-03 2011-06-01 索尼公司 薄膜晶体管及显示装置
CN102315277A (zh) * 2010-07-05 2012-01-11 索尼公司 薄膜晶体管和显示装置
CN102969362A (zh) * 2011-09-01 2013-03-13 中国科学院微电子研究所 高稳定性非晶态金属氧化物tft器件

Also Published As

Publication number Publication date
TW201508841A (zh) 2015-03-01
CN105409003A (zh) 2016-03-16
JP6426177B2 (ja) 2018-11-21
TWI660432B (zh) 2019-05-21
KR20160034262A (ko) 2016-03-29
WO2015010825A1 (en) 2015-01-29
JP2016527719A (ja) 2016-09-08

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