TWI660056B - Ｉｔｏ濺鍍靶材及其製造方法 - Google Patents

Ｉｔｏ濺鍍靶材及其製造方法 Download PDF

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Publication number
TWI660056B
TWI660056B TW105102324A TW105102324A TWI660056B TW I660056 B TWI660056 B TW I660056B TW 105102324 A TW105102324 A TW 105102324A TW 105102324 A TW105102324 A TW 105102324A TW I660056 B TWI660056 B TW I660056B
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Taiwan
Prior art keywords
sno
ito
target
phase
powder
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TW105102324A
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English (en)
Chinese (zh)
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TW201638364A (zh
Inventor
Shintaro Ishida
石田新太郎
Original Assignee
Mitsui Mining & Smelting Co., Ltd.
日商三井金屬鑛業股份有限公司
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Publication of TW201638364A publication Critical patent/TW201638364A/zh
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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/77—Density
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Chemistry (AREA)
TW105102324A 2015-04-30 2016-01-26 Ｉｔｏ濺鍍靶材及其製造方法 TWI660056B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015092830 2015-04-30
JP2015-092830 2015-04-30

Publications (2)

Publication Number Publication Date
TW201638364A TW201638364A (zh) 2016-11-01
TWI660056B true TWI660056B (zh) 2019-05-21

Family

ID=57199250

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105102324A TWI660056B (zh) 2015-04-30 2016-01-26 Ｉｔｏ濺鍍靶材及其製造方法

Country Status (5)

Country Link
JP (1) JPWO2016174877A1 (fr)
KR (1) KR20170142169A (fr)
CN (1) CN107250426A (fr)
TW (1) TWI660056B (fr)
WO (1) WO2016174877A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111440000B (zh) * 2020-04-24 2022-04-29 河北恒博新材料科技股份有限公司 一种大尺寸旋转陶瓷靶材制备方法
JP7394085B2 (ja) * 2021-04-05 2023-12-07 Ｊｘ金属株式会社 スパッタリングターゲット及びその製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200710236A (en) * 2005-06-29 2007-03-16 Mitsui Mining & Smelting Co Indium oxide-tin oxide powder, sputtering target using same, method for producing idium oxide-tin oxide powder
CN101580379A (zh) * 2009-06-29 2009-11-18 北京航空航天大学 掺铌纳米铟锡氧化物粉末及其高密度溅射镀膜靶材的制备方法
CN101622208A (zh) * 2007-08-06 2010-01-06 三井金属矿业株式会社 Ito烧结体以及ito溅射靶
JP2010150093A (ja) * 2008-12-25 2010-07-08 Tosoh Corp 透明導電膜用焼結体の製造方法
JP2010150611A (ja) * 2008-12-25 2010-07-08 Tosoh Corp 透明導電膜用焼結体及びスパッタリングターゲット並びにその製造方法
JP2010255022A (ja) * 2009-04-22 2010-11-11 Sumitomo Metal Mining Co Ltd Ｉｔｏスパッタリングターゲットとその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3591610B2 (ja) * 1994-11-10 2004-11-24 日立金属株式会社 透明導電膜形成用ｉｔｏ焼結体
JP2000233969A (ja) * 1998-12-08 2000-08-29 Tosoh Corp Ｉｔｏスパッタリングターゲットおよび透明導電膜の製造方法
JP4642327B2 (ja) * 2003-06-03 2011-03-02 Ｊｘ日鉱日石金属株式会社 Ｉｔｏスパッタリングターゲット及びその製造方法
JP2009040620A (ja) * 2007-08-06 2009-02-26 Mitsui Mining & Smelting Co Ltd Ｉｔｏ焼結体およびｉｔｏスパッタリングターゲット
JP2012126937A (ja) * 2010-12-13 2012-07-05 Sumitomo Metal Mining Co Ltd Ｉｔｏスパッタリングターゲットとその製造方法
CN102718499B (zh) * 2012-07-10 2014-02-26 国家钽铌特种金属材料工程技术研究中心 一种含In4Sn3O12相ITO溅射靶的制造方法
JP5987105B2 (ja) * 2013-03-29 2016-09-06 Ｊｘ金属株式会社 Ｉｔｏスパッタリングターゲット及びその製造方法
KR101583693B1 (ko) * 2014-02-18 2016-01-08 미쓰이금속광업주식회사 Ito 스퍼터링 타깃재 및 그 제조 방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200710236A (en) * 2005-06-29 2007-03-16 Mitsui Mining & Smelting Co Indium oxide-tin oxide powder, sputtering target using same, method for producing idium oxide-tin oxide powder
CN101622208A (zh) * 2007-08-06 2010-01-06 三井金属矿业株式会社 Ito烧结体以及ito溅射靶
JP2010150093A (ja) * 2008-12-25 2010-07-08 Tosoh Corp 透明導電膜用焼結体の製造方法
JP2010150611A (ja) * 2008-12-25 2010-07-08 Tosoh Corp 透明導電膜用焼結体及びスパッタリングターゲット並びにその製造方法
JP2010255022A (ja) * 2009-04-22 2010-11-11 Sumitomo Metal Mining Co Ltd Ｉｔｏスパッタリングターゲットとその製造方法
CN101580379A (zh) * 2009-06-29 2009-11-18 北京航空航天大学 掺铌纳米铟锡氧化物粉末及其高密度溅射镀膜靶材的制备方法

Also Published As

Publication number Publication date
TW201638364A (zh) 2016-11-01
WO2016174877A1 (fr) 2016-11-03
JPWO2016174877A1 (ja) 2018-02-22
CN107250426A (zh) 2017-10-13
KR20170142169A (ko) 2017-12-27

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