TWI658466B - 記憶裝置及其測試讀寫方法 - Google Patents

記憶裝置及其測試讀寫方法 Download PDF

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Publication number
TWI658466B
TWI658466B TW107118177A TW107118177A TWI658466B TW I658466 B TWI658466 B TW I658466B TW 107118177 A TW107118177 A TW 107118177A TW 107118177 A TW107118177 A TW 107118177A TW I658466 B TWI658466 B TW I658466B
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Taiwan
Prior art keywords
voltage
precharge
test
bit line
enable signal
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TW107118177A
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English (en)
Chinese (zh)
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TW202004768A (zh
Inventor
中岡裕司
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華邦電子股份有限公司
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Publication of TW202004768A publication Critical patent/TW202004768A/zh

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  • For Increasing The Reliability Of Semiconductor Memories (AREA)
TW107118177A 2018-05-25 2018-05-28 記憶裝置及其測試讀寫方法 TWI658466B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018100086A JP6576510B1 (ja) 2018-05-25 2018-05-25 メモリデバイス及びそのテスト読書き方法
JP2018-100086 2018-05-25

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TWI658466B true TWI658466B (zh) 2019-05-01
TW202004768A TW202004768A (zh) 2020-01-16

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10566034B1 (en) * 2018-07-26 2020-02-18 Winbond Electronics Corp. Memory device with control and test circuit, and method for test reading and writing using bit line precharge voltage levels
TWI747395B (zh) * 2020-02-10 2021-11-21 台灣積體電路製造股份有限公司 記憶體電路、控制多級預充電電路的方法及記憶體

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090027984A1 (en) * 2000-02-04 2009-01-29 Renesas Technology Corp. Semiconductor device
TW201301293A (zh) * 2011-04-26 2013-01-01 Soitec Silicon On Insulator 不具專用預充電電晶體之差動感測放大器
US20170011796A1 (en) * 2014-08-01 2017-01-12 Samsung Electronics Co., Ltd. Nonvolatile memory device and method for sensing the same
US20170053696A1 (en) * 2015-08-18 2017-02-23 Samsung Electronics Co., Ltd. Semiconductor memory device
US20170206944A1 (en) * 2015-07-17 2017-07-20 SK Hynix Inc. Bitline senseamplifier and semiconductor memory apparatus using the same
US20170309330A1 (en) * 2016-04-21 2017-10-26 Suk-Soo Pyo Resistive memory device and a memory system including the same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090027984A1 (en) * 2000-02-04 2009-01-29 Renesas Technology Corp. Semiconductor device
US20100309741A1 (en) * 2000-02-04 2010-12-09 Renesas Electronics Corporation Semiconductor device
TW201301293A (zh) * 2011-04-26 2013-01-01 Soitec Silicon On Insulator 不具專用預充電電晶體之差動感測放大器
US20170011796A1 (en) * 2014-08-01 2017-01-12 Samsung Electronics Co., Ltd. Nonvolatile memory device and method for sensing the same
US20170206944A1 (en) * 2015-07-17 2017-07-20 SK Hynix Inc. Bitline senseamplifier and semiconductor memory apparatus using the same
US20170053696A1 (en) * 2015-08-18 2017-02-23 Samsung Electronics Co., Ltd. Semiconductor memory device
US20170309330A1 (en) * 2016-04-21 2017-10-26 Suk-Soo Pyo Resistive memory device and a memory system including the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10566034B1 (en) * 2018-07-26 2020-02-18 Winbond Electronics Corp. Memory device with control and test circuit, and method for test reading and writing using bit line precharge voltage levels
TWI747395B (zh) * 2020-02-10 2021-11-21 台灣積體電路製造股份有限公司 記憶體電路、控制多級預充電電路的方法及記憶體

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Publication number Publication date
JP2019204568A (ja) 2019-11-28
TW202004768A (zh) 2020-01-16
JP6576510B1 (ja) 2019-09-18

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