TWI658466B - 記憶裝置及其測試讀寫方法 - Google Patents
記憶裝置及其測試讀寫方法 Download PDFInfo
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- TWI658466B TWI658466B TW107118177A TW107118177A TWI658466B TW I658466 B TWI658466 B TW I658466B TW 107118177 A TW107118177 A TW 107118177A TW 107118177 A TW107118177 A TW 107118177A TW I658466 B TWI658466 B TW I658466B
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- Prior art keywords
- voltage
- precharge
- test
- bit line
- enable signal
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- For Increasing The Reliability Of Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018100086A JP6576510B1 (ja) | 2018-05-25 | 2018-05-25 | メモリデバイス及びそのテスト読書き方法 |
JP2018-100086 | 2018-05-25 |
Publications (2)
Publication Number | Publication Date |
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TWI658466B true TWI658466B (zh) | 2019-05-01 |
TW202004768A TW202004768A (zh) | 2020-01-16 |
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Application Number | Title | Priority Date | Filing Date |
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TW107118177A TWI658466B (zh) | 2018-05-25 | 2018-05-28 | 記憶裝置及其測試讀寫方法 |
Country Status (2)
Country | Link |
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JP (1) | JP6576510B1 (ja) |
TW (1) | TWI658466B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10566034B1 (en) * | 2018-07-26 | 2020-02-18 | Winbond Electronics Corp. | Memory device with control and test circuit, and method for test reading and writing using bit line precharge voltage levels |
TWI747395B (zh) * | 2020-02-10 | 2021-11-21 | 台灣積體電路製造股份有限公司 | 記憶體電路、控制多級預充電電路的方法及記憶體 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090027984A1 (en) * | 2000-02-04 | 2009-01-29 | Renesas Technology Corp. | Semiconductor device |
TW201301293A (zh) * | 2011-04-26 | 2013-01-01 | Soitec Silicon On Insulator | 不具專用預充電電晶體之差動感測放大器 |
US20170011796A1 (en) * | 2014-08-01 | 2017-01-12 | Samsung Electronics Co., Ltd. | Nonvolatile memory device and method for sensing the same |
US20170053696A1 (en) * | 2015-08-18 | 2017-02-23 | Samsung Electronics Co., Ltd. | Semiconductor memory device |
US20170206944A1 (en) * | 2015-07-17 | 2017-07-20 | SK Hynix Inc. | Bitline senseamplifier and semiconductor memory apparatus using the same |
US20170309330A1 (en) * | 2016-04-21 | 2017-10-26 | Suk-Soo Pyo | Resistive memory device and a memory system including the same |
-
2018
- 2018-05-25 JP JP2018100086A patent/JP6576510B1/ja active Active
- 2018-05-28 TW TW107118177A patent/TWI658466B/zh active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090027984A1 (en) * | 2000-02-04 | 2009-01-29 | Renesas Technology Corp. | Semiconductor device |
US20100309741A1 (en) * | 2000-02-04 | 2010-12-09 | Renesas Electronics Corporation | Semiconductor device |
TW201301293A (zh) * | 2011-04-26 | 2013-01-01 | Soitec Silicon On Insulator | 不具專用預充電電晶體之差動感測放大器 |
US20170011796A1 (en) * | 2014-08-01 | 2017-01-12 | Samsung Electronics Co., Ltd. | Nonvolatile memory device and method for sensing the same |
US20170206944A1 (en) * | 2015-07-17 | 2017-07-20 | SK Hynix Inc. | Bitline senseamplifier and semiconductor memory apparatus using the same |
US20170053696A1 (en) * | 2015-08-18 | 2017-02-23 | Samsung Electronics Co., Ltd. | Semiconductor memory device |
US20170309330A1 (en) * | 2016-04-21 | 2017-10-26 | Suk-Soo Pyo | Resistive memory device and a memory system including the same |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10566034B1 (en) * | 2018-07-26 | 2020-02-18 | Winbond Electronics Corp. | Memory device with control and test circuit, and method for test reading and writing using bit line precharge voltage levels |
TWI747395B (zh) * | 2020-02-10 | 2021-11-21 | 台灣積體電路製造股份有限公司 | 記憶體電路、控制多級預充電電路的方法及記憶體 |
Also Published As
Publication number | Publication date |
---|---|
JP2019204568A (ja) | 2019-11-28 |
TW202004768A (zh) | 2020-01-16 |
JP6576510B1 (ja) | 2019-09-18 |
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