TWI649183B - Imprinting device, imprinting method, and method of manufacturing the article - Google Patents

Abstract

An imprint device for forming a pattern of an imprint material on a substrate by using a mold includes a capture unit having a capture area for capturing particles with an electrostatic force so that the capture area surrounds a placement space for the substrate Or a holder for the substrate.

Description

Imprinting device, imprinting method, and method for manufacturing articles

The present invention relates to an imprint apparatus, an imprint method, and an article manufacturing method.

Known embossing devices form fine patterns on a substrate (wafer) for use in, for example, the manufacture of semiconductor devices. The imprint apparatus contacts the imprint material on the substrate with a mold having a pattern forming portion (hereinafter, referred to as a pattern portion), and applies energy for hardening to the imprint material, thereby forming a pattern made of the hardened material.

When the mold is separated from the imprint material, the mold becomes charged (hereinafter, this is referred to as "separation charging"). The pattern portion of the mold is intended to capture charged particles near the mold. If a pattern portion of a mold having captured particles is brought into contact with an imprint material, the pattern formed on the substrate may have defects.

PTL 1 describes the technology used to charge a part of a mold or a mold holding mechanism so that the part functions as a particle capture area to prevent the mold The patterned part captures particles in the atmosphere. PTL 1 describes that the particle capturing area is set upstream of the substrate in a position (imprint position) where the substrate faces the mold, and the substrate is transported to the imprint position in the transport direction.

However, the particles may be suspended in all directions with respect to the pattern portion. In the particle capturing area disclosed in PTL 1, the pattern portion may capture particles close to the pattern portion in directions other than the conveyance direction (that is, from the upstream side to the downstream side of the conveyance direction).

[Quote list] [Patent Literature]

[PTL 1] Japanese Patent Publication No. 2014-175340

The aspect of the present invention provides an imprint method that reduces the possibility that particles can be sandwiched between the mold and the substrate when the mold is brought into contact with the imprint material on the substrate.

According to an aspect of the present invention, an imprint apparatus for forming a pattern of an imprint material on a substrate by using a mold includes a capture unit having a capture region for capturing particles with an electrostatic force, so that the capture region surrounds the Space for the substrate.

Other features of the invention will become apparent from the following description of exemplary embodiments with reference to the accompanying drawings.

2‧‧‧ substrate surface board

3‧‧‧ surface boards

4‧‧‧ wafer (substrate)

4a‧‧‧Embossed material

5‧‧‧ Fixture

6‧‧‧ units

7‧‧‧ pillar

8‧‧‧Bridge Surface Board

9‧‧‧mould

9a‧‧‧Pattern

10‧‧‧Mould holding mechanism

11‧‧‧ irradiation unit

12, 30‧‧‧ static clamp

13, 31, 50, 60‧‧‧ Charging pads

13a‧‧‧Rectangular opening

13b‧‧‧Capture area (second capture area)

14, 32‧‧‧ voltage source

15‧‧‧Observation System

16‧‧‧ Supply Unit

17‧‧‧controller

20‧‧‧ particles

21‧‧‧Mirror

22‧‧‧ UV

31b‧‧‧Capture area (first capture area)

40‧‧‧ Delivery agency (replacement agency)

41‧‧‧part

45‧‧‧ circular air outlet

46‧‧‧air curtain

47‧‧‧ space

51, 61‧‧‧ Electric wires

52‧‧‧ Dielectric

53‧‧‧ support

100, 120, 200, 300, 400‧‧‧ embossing device

FIG. 1 is a diagram depicting an imprint apparatus according to a first embodiment.

Fig. 2A is a plan view of a charging plate surrounding a mold.

Figure 2B is a plan view of the charging plate surrounding the mold.

Figure 2C is a plan view of the charging plate surrounding the mold.

FIG. 3A is a plan view of a charging plate surrounding a wafer.

FIG. 3B is a plan view of a charging plate surrounding the wafer.

FIG. 3C is a plan view of the charging plate surrounding the wafer.

Fig. 4A is a diagram explaining the first advantage of the first embodiment.

Fig. 4B is a diagram explaining the first advantage of the first embodiment.

Fig. 5A is a diagram explaining a second advantage of the first embodiment.

Fig. 5B is a diagram explaining a second advantage of the first embodiment.

FIG. 6 is a diagram depicting an imprint apparatus according to a second embodiment.

FIG. 7A is a diagram depicting an imprint apparatus according to a fourth embodiment.

FIG. 7B is a diagram depicting an imprint apparatus according to a fourth embodiment.

FIG. 8 is a flowchart of voltage control in the fourth embodiment.

FIG. 9 is a timing chart of voltage control in the fourth embodiment.

FIG. 10A is a schematic diagram of an imprint apparatus according to a fifth embodiment.

FIG. 10B is a schematic diagram of an imprint apparatus according to a fifth embodiment.

FIG. 11 is a diagram depicting an imprint apparatus according to a seventh embodiment.

Fig. 12A is a plan view of a charging plate surrounding a wafer in an eighth embodiment.

FIG. 12B is a cross-sectional view illustrating a charging plate surrounding a wafer in an eighth embodiment.

FIG. 13 is a plan view of a charging plate surrounding a wafer in a modification of the eighth embodiment.

Fig. 14 is a plan view of a charging plate surrounding a mold in an eighth embodiment.

[First embodiment]

FIG. 1 depicts an imprint apparatus 100 according to a first embodiment. The imprint apparatus 100 contacts the mold 9 with the imprint material 4 a on the wafer (substrate) 4, hardens the imprint material 4 a in contact with the mold 9, and separates the mold 9 from the hardened imprint material 4 a. A pattern made of an imprint material 4a is formed on the circle 4. The term "Z axis or direction" as used herein refers to a vertical axis or direction, and the terms "X axis or direction" and "Y axis or direction" refer to two axes or two axes that are perpendicular to each other in a plane perpendicular to the Z axis. direction. Examples of the imprint material 4a used include a photo-curable composition.

The imprint apparatus 100 includes a base surface plate 2, a table surface plate 3 on the base surface plate 2, a jig 5 that holds a wafer 4, and a stage 6 that moves together with the jig 5 on the table surface plate 3. The imprint apparatus 100 further includes a pillar 7 provided on the base surface plate 2, a mold holding mechanism (hereinafter, referred to as a “holding mechanism”) 10, and a bridge type surface plate 8. The bridge-type surface plate 8 is supported by the pillar 7 and supports the holding mechanism 10.

The holding mechanism 10 holds a mold 9 using a mold clamp (not shown). The holding mechanism 10 includes a mold capable of positioning the mold 9 in at least the Z direction Drive mechanism (not depicted). The mold driving mechanism may position the mold 9 in other directions (for example, a six-axis direction including an X direction, a Y direction, and a rotation direction around the X, Y, and Z axes).

The jig 5 holds the wafer 4 by reducing the pressure in the space between the wafer 4 and the jig 5. The table 6 includes a top plate (not shown) on which the jig 5 is mounted and a table driving mechanism (not shown) that drives the top plate. The stage driving mechanism includes a linear motor and an air cylinder, and uses the linear motor and the air cylinder to position the wafer 4 in at least X and Y directions. The stage driving mechanism may position the wafer 4 in two or more axial directions (for example, a six-axis direction). The position of the stage 6 is measured using, for example, a laser interferometer.

The imprint apparatus 100 further includes an irradiation unit 11 provided on the bridge-type surface plate 8. The irradiation unit 11 emits ultraviolet light 22 for curing the imprint material 4a. The emitted ultraviolet light 22 is reflected by the mirror 21 and then applied to the wafer 4.

The mold 9 has a pattern portion 9 a used as a pattern forming surface facing the wafer 4 (in the negative Z direction). The pattern portion 9a has, for example, a relief pattern with a line width of tens of nanometers. The surface of the mold 9 opposite to the pattern portion 9a is held by the above-mentioned mold holder. The mold 9 can be made of a material that allows ultraviolet light 22 to pass therethrough, such as quartz.

The imprint apparatus 100 further includes a mold-side capture unit (second capture unit). A portion of the mold-side capturing unit is provided on a lower portion of the holding mechanism 10. In this embodiment, the mold-side capture unit includes an electrostatic clip 12, a charging plate 13 held by the electrostatic clip 12, and a voltage source 14 connected to the electrostatic clip 12 and the charging plate 13 to supply a voltage to these components. Electrostatic clamp 12 is provided on a lower portion of the holding mechanism 10. The charging plate 13 is provided on the electrostatic clip 12 on the side opposite to the holding mechanism 10 (facing the wafer).

The charging plate 13 is a rectangular conductive plate having a rectangular opening 13a (see FIG. 2A). The charging plate 13 has the same shape as the electrostatic clip 12. On the charging plate 13, a capture region (second capture region) 13 b that captures (collects) charged particles with an electrostatic force is formed to surround a placement space for the mold 9. The capture area 13 b extends along the mold 9.

In the present embodiment, the term "placement space for the mold 9" refers to a space occupied by the mold 9 when the mold 9 is placed in the space.

In the present embodiment, the term “surrounding the placement space for the mold 9” means that when the placement space and the charging plate 13 are viewed in a direction perpendicular to the pattern portion 9 a of the mold 9, at least the capture area 13 b surrounds the placement space for the mold 9 Place it around the space. Further, this term means a portion of the side surface (vertically extending) of the mold 9 facing the mold-side capturing unit (the electrostatic clip 12 and the charging plate 13 in this embodiment) when the mold 9 is placed.

FIG. 2A is a plan view of the mold 9 and the charging plate 13 in this embodiment when viewed from directly below. The capture area 13 b may be a rectangular area surrounding four sides of the outer shape of the placement space (second space) for the mold 9 or extending along it. In FIG. 2A, the placement space for the mold 9 is the same space as the space occupied by the mold 9. The shape of the placement space is the shape of the placement space viewed from the vertical direction (Z direction). The capture area 13b can be provided by a continuous and rectangular charging pad 13 as in the first embodiment.

The length of each side of the outer shape of the charging plate 13 is, for example, less than or equal to 3.0 times the length of the corresponding side of the mold 9. If the length of the outer side of the charging plate 13 is too short, the area for capturing particles 20 will decrease (see FIGS. 4A and 4B). If the length is too long, the size of the imprint apparatus 100 will increase.

In order to apply an external force to the side surface of the mold 9 to correct the shape of the pattern portion 9 a during imprinting, for example, an actuator for shape correction is provided between the mold 9 and the charging plate 13 (that is, the charging plate 13 Inside the rectangular opening 13a and the area outside the mold 9). In this case, the length of each side of the outer shape of the charging plate 13 is preferably greater than or equal to 1.5 times the length of the corresponding side of the mold 9.

Although FIG. 2A depicts a continuous charging plate 13, the charging plate 13 may have any shape capable of providing a capture area 13 b surrounding a placement space for the mold 9. The charging plate 13 can be formed so that the four corners are removed and the charging plate 13 is composed of four sections as depicted in FIG. 2B. Alternatively, as indicated by the dotted line in FIG. 2C, the electrostatic clip 12 may include sections configured such that each section is located in a part of a portion of the charging plate 13 extending along each side of the charging plate 13. In this case, the capture area 13 b is also provided in a part of a portion extending along each side of the charging plate 13. The capture area 13b can be arranged along the four sides of the placement space. The capture area 13 b may be annular to surround the mold 9.

In the mold-side capture unit, a voltage source (second control unit) 14 controls the voltage that charges the capture area 13b. The enabling electrostatic clip 12 attracts and holds the charging plate 13 and allows the capture area 13b to generate electricity. field. The generated electric field traps charged particles. The voltage source 14 controls the supply voltage so that the capture area 13 b is charged with the same polarity as the mold 9.

A measurement device (not shown) for determining the polarity of the charge in the mold 9 may be provided, and the polarity of the voltage supplied from the voltage source 14 may be determined based on the determination result of the measurement device. Alternatively, the voltage source 14 may use the same polarity charging capture area 13b as the polarity of the charging mold 9 intended to be used. It is intended that the polarity of the charging mold 9 is determined by the relationship between the material of the mold 9 and the material of the imprint material 4a due to the separation charging.

For example, when the imprint material 4a made with urethane as the substrate, acrylic as the substrate, or epoxy as the substrate is brought into contact with the mold 9 made of quartz, the mold 9 is intended to be positively charged and intended The imprint material 4a is negatively charged. Therefore, if the above-mentioned measuring equipment is not provided, the voltage source 14 can make the capture area 13b positively charged.

The imprint apparatus 100 further includes a wafer-side capture unit (capture unit or first capture unit). In this embodiment, the wafer-side capture unit includes an electrostatic clip 30, a charging plate 31 provided on the electrostatic clip 30, and a voltage source (a control unit or a control unit or a voltage source) connected to the electrostatic clip 30 and the charging plate 31 to supply voltage to these components. First control unit) 32. The electrostatic clip 30 is provided on the stage 6 so as to surround the periphery of the placement space (first space) for the wafer 4. In FIGS. 5A and 5B, the placement space for the wafer 4 is the same as the space where the wafer 4 is placed.

The charging plate 31 is a conductive plate having the same shape as the electrostatic clip 30. On the charging plate 31, a capture region (first capture region) 31b that captures (collects) charged particles with an electrostatic force is formed to surround Space for round 4. The capture area 31 b extends along the wafer 4.

In the present embodiment, the term “placement space for the wafer 4” refers to the space occupied by the wafer 4 when the wafer 4 is placed in a space.

In the present embodiment, the term "surrounding the placement space for the wafer 4" means when the placement space and the charging plate 31 are viewed in a direction perpendicular to the surface on which the pattern to be formed on the wafer 4 is to be formed. At least the capture area 31 b surrounds the periphery of the placement space for the wafer 4. In addition, this term means a portion of the side surface (which extends vertically) of the wafer 4 facing the wafer-side capture unit (the electrostatic clip 30 and the charging plate 31 in this embodiment) when the wafer 4 is placed.

FIG. 3A is a plan view of the wafer 4 and the charging plate 31 in this embodiment when viewed from directly above. The charging plate 31 can have an outer diameter less than or equal to 2.0 times the outer diameter of the wafer 4.

In the wafer-side capture unit, a voltage source (a control unit or a first control unit) 32 controls a voltage that charges the capture area 31b. This enables the electrostatic clip 30 to attract and hold the charging plate 31 and allow the capture area 31b to generate an electric field. The generated electric field traps charged particles. The voltage source 32 controls the supply voltage so that the capture area 31 b is charged with the same polarity as the mold 9.

A measurement device (not shown) for determining the polarity of the charge in the mold 9 may be provided, and the polarity of the voltage supplied from the voltage source 32 may be determined based on the determination result of the measurement device. Alternatively, the voltage source 32 may use a charging capture area of the same polarity as the intended polarity of the charging mold 9 31b. Therefore, if the above-mentioned measuring equipment is not provided, the voltage source 32 may cause the capture area 31b to be positively charged.

For the “placement for surrounding the wafer 4”, as depicted in FIG. 3B, the electrostatic clip 30 may include a section, and the charging plate 31 may include a section such that the section discontinuously surrounds the wafer 4. The term “discontinuously surrounding” means a state in which the section surrounds eighty percent or more of the circumference of the placement space for the wafer 4. Further, as depicted in FIG. 3C, the section of the electrostatic clip 30 may be configured such that the capture area 31 b discontinuously surrounds the placement space for the wafer 4.

Referring again to FIG. 1, the imprint apparatus 100 further includes an observation system 15 disposed directly above the mold 9. The observation system 15 detects an alignment mark in the pattern portion 9 a and an alignment mark (not shown) on the wafer 4. The imprint apparatus 100 further includes a supply unit 16 for supplying an uncured imprint material 4 a to a predetermined position when the wafer 4 is placed below the supply unit 16.

The imprint apparatus 100 further includes a controller 17. The controller 17 is connected to the stage 6, the holding mechanism 10, the irradiation unit 11, the voltage sources 14 and 32, the observation system 15, and the supply unit 16. The control unit 17 controls these components to perform the imprint processing in a centralized manner. The term "imprinting process" as used herein refers to repeating a series of operations, that is, supplying the embossing material 4a to a pattern forming area (not depicted) on the wafer 4, bringing the mold 9 into contact with the embossing material 4a, The process of hardening the imprint material 4a and separating the mold 9 from the imprint material 4a.

The imprint apparatus 100 according to the present embodiment can reduce imprint loading. Set the pattern part 9a in the center 100 to capture particles. The reduction of this phenomenon will now be described.

4A and 4B are diagrams explaining the first advantage of the first embodiment. FIG. 4A depicts a state where the negatively charged particles 20 in the device land on one end of the wafer 4 when the stage 6 stops and the supply of the imprint material 4 a from the supply unit 16 to the wafer 4 ends. FIG. 4B depicts a state where the stage 6 is being driven and is moving from a position where the imprint material 4a faces the supply unit 16 to another position where the imprint material 4a faces the mold 9 (below the pattern portion 9a). The capturing area 13 b can attract and capture the particles 20 passing under the charging plate 13 with an electrostatic force (static).

5A and 5B are diagrams explaining a second advantage of the first embodiment. FIG. 5A depicts a state where the supply of the imprint material 4 a from the supply unit 16 to the wafer 4 is stopped when the stage 6 is stopped. FIG. 5B depicts a state where the negatively-charged particles 20 are moved toward and under the mold 9 by the airflow caused by the driving table 6. As depicted in FIG. 5B, the capture area 13b can attract and capture the particles 20 with an electrostatic force.

Although the capturing of particles 20 by the capturing area 13b has been described with reference to FIGS. 4A to 5B, the capturing area 31b adjacent to the wafer 4 can also capture the particles 20.

As described above, the capture regions 13b and 31b are charged with the same polarity as that of the charging mold 9. As depicted in FIGS. 4A and 4B, the particles 20 deposited on the stage 6 can be captured by the charging plate 13 surrounding the pattern portion 9a. In addition, the particles 20 moving along the airflow caused by the driving table 6 toward the mold 9 and moving under the mold 9 can also be drawn from the surrounding figure. The charging plate 13 of the case portion 9a is captured.

This reduces the possibility that the negatively-charged particles 20 may be captured by the pattern portion 9a when separated and charged. In addition, this reduces the possibility that the particles 20 may be sandwiched between the mold 9 and the wafer 4 when the mold 9 is brought into contact with the imprint material 4 a. Therefore, pattern defects and cracks in the pattern portion 9a of the mold 9 caused by the particles 20 can be prevented.

In addition, at least one of the voltage sources 14 and 32 can supply a voltage such that the absolute value of the potential of the corresponding one of the capture regions 13 b and 31 b is greater than the absolute value of the potential of the mold 9. The enabling particles 20 are easily captured by the corresponding one of the charging plates 13 and 31 instead of the mold 9. In particular, if the absolute value of the potential of the capture region 31 b allowed by the voltage source 32 is greater than the absolute value of the potential of the mold 9, when the charging plate 31 approaches the mold 9, the particles 20 captured by it can be prevented from moving to the mold 9.

[Second embodiment]

FIG. 6 depicts an imprint apparatus 120 according to a second embodiment of the present invention. The imprint device 120 includes components other than the charging plate 13 and the electrostatic clip 12 in the imprint device 100.

The voltage source 32 supplies, for example, a voltage of about 0.5 to 5 kV. The distance between the mold 9 and the wafer 4 is about several millimeters. The voltage source 32 supplies a voltage so that the charging plate 31 is charged with the same polarity as the mold 9. Therefore, the particles 20 that may adhere to the mold 9 can be captured only by the electric field generated from the charging plate 31.

Potential of mold 9 can be measured using measuring equipment (not pictured) Measurement. The voltage source 32 can supply a voltage based on the measurement result, so that the potential of the charging plate 31 is higher than the potential of the mold 9. Therefore, not only the particles 20 that may adhere to the mold 9 but also particles 20 intended to be separated from the mold 9 and part of the particles 20 deposited on the mold 9 can be attracted and captured by the charging plate 31.

The second embodiment provides the same advantages as the first embodiment. Specifically, it is possible to reduce the possibility that the particles 20 may be sandwiched between the mold 9 and the wafer 4 when the mold 9 is brought into contact with the imprint material 4 a, and thus prevent pattern defects of the pattern portion 9 a of the mold 9 caused by the particles 20. And cracked. In addition, in contrast to the first embodiment, the imprint apparatus 120 according to the second embodiment has a simplified configuration.

[Third embodiment]

The imprint apparatus according to the third embodiment has the same configuration as the imprint apparatus 100 according to the first embodiment. The third embodiment is different from the first embodiment in that each of the voltage source 14 and the voltage source 32 controls the supply voltage so that the capture regions 13b and 31b are charged with opposite polarities. In the third embodiment, the capture region 31b is positively charged and the capture region 13b is negatively charged.

Due to the separate charging, the negatively charged particles 20 are captured by the capture region 13b instead of the positively charged pattern portion 9a. On the other hand, due to the separation of the illuminated and irradiated areas around the imprint material 4a, the positively charged particles 20 are attracted by the capture area 31b, rather than being attracted by the negatively charged imprint material 4a.

Because the voltage sources 14 and 32 control the supply voltage, the charging The electric plates 13 and 31 are charged with opposite polarities and can capture the positively charged particles 20 and the negatively charged particles 20. This reduces the possibility that the particles 20 may be sandwiched between the mold 9 and the wafer 4 when the mold 9 is brought into contact with the imprint material 4a, and thus prevents pattern defects and cracks in the pattern portion 9a of the mold 9 caused by the particles 20.

The same advantages can be obtained if each of the capture areas 13b and 31b is charged with a polarity opposite to that of the third embodiment.

[Fourth embodiment]

7A and 7B depict an imprint apparatus 200 according to a fourth embodiment. The imprint apparatus 200 has the same configuration as the imprint apparatus 100 according to the first embodiment. Each of the voltage sources 14 and 32 supplies a voltage having the same polarity as that of the third embodiment, that is, the capture region 13b is positively charged and the capture region 31b is negatively charged.

When a part of the pattern forming area (irradiated area) on the wafer 4 is imprinted, the charging plate 13 approaches the charging plate 31 while a part of the charging plate 13 faces a part of the charging plate 31. If a portion of the charging plate 13 is close to a portion of the charging plate 31 and the charging plates 13 and 31 are charged with opposite polarities and the polarity difference between these plates is very large, discharge may occur. The charging plates 13 and 31 can be burned by discharging and can be replaced. In addition, discharge noise can cause errors in, for example, the voltage sources 14 and 32.

According to the fourth embodiment, the voltages supplied from the respective voltage sources 14 and 32 are changed during the patterning operation based on the details of this operation, so the probability of discharge is minimized. The term "pattern shape operation period" means The period between the time when the imprint material 4 a is supplied to the pattern formation area on the wafer 4 and the time when the mold 9 is separated from the imprint material 4 a to be molded.

FIG. 8 is a flowchart of a process of forming a pattern in each region on a wafer 4. The controller 17 executes a program represented by a flowchart. At the beginning of the process depicted by this flowchart, the electrostatic clip 12 holds the charging plate 13 and the electrostatic clip 30 holds the charging plate 31.

The voltage source 14 supplies a set voltage (of +2 kV in this embodiment) to charge the capture area 13b so that the capture area 13b has a predetermined potential. Similarly, the voltage source 32 supplies a set voltage (of -2 kV in this embodiment) to charge the capture area 31b so that the capture area 31b has a predetermined potential (S101).

The controller 17 then allows the supply unit 16 to supply the imprint material 4a to the wafer 4 (S102).

The controller 17 drives the stage 6 to move the wafer 4 to a position where the wafer 4 faces the mold 9 (S103). The controller 17 determines whether the wafer 4 is positioned at the imprinting position (S104).

When it is determined that the wafer 4 is not positioned (No in S104), the controller 17 drives the stage 6 until the wafer 4 is positioned at the imprinting position. When the positioning of the wafer 4 is determined (YES in S104), the controller 17 starts driving the mold 9 in the Z direction to move the mold 9 downward from its standby position (S105). While starting to move the mold 9 downward, the controller 17 controls the voltage sources 14 and 32 so that the absolute value of the voltage supplied from each voltage source is reduced from 2 kV to 1 kV (S106). The decrease in voltage causes the The electrostatic forces generated by the domains 13b and 31b are reduced.

Therefore, when the charging plate 13 approaches the charging plate 31, discharge tends not to occur. The controller 17 performs an imprint operation (S107). The imprinting operation includes aligning the mold 9 with the wafer 4 to bring the mold 9 into contact with the imprint material 4a, irradiating the imprint material 4a with ultraviolet light 22 to harden the imprint material 4a, and separating the mold 9 from the imprint material 4a.

When the imprint operation is completed, the controller 17 starts driving the mold 9 in the Z direction to move the mold 9 upward to the standby position, and thus separates the mold 9 from the imprint material 4a (S108). The controller 17 determines whether the mold 9 returns to the standby position (S109). When it is determined that the mold 9 has not returned to the standby position (No in S109), the controller 17 moves the mold 9 upward until the mold 9 returns to the standby position. When it is determined that the mold 9 is returned to the standby position (YES in S109), the controller 17 controls the voltage sources 14 and 32 to increase the absolute value of the potential of each of the charging plates 13 and 31 from 1 kV to 2 kV (S110).

The controller 17 determines whether a pattern is formed in all the irradiation areas (S111). When it is determined that the formation of the pattern is not completed (NO in S111), the controller 17 repeats steps S102 to S111. When it is determined that the formation of the pattern is completed (YES in S111), the controller 17 terminates the routine.

FIG. 9 depicts the relationship between the change in the position of the mold 9 over time and the change in the voltage applied to the charging plate 13 over time. The controller 17 changes the voltages of the voltage sources 14 and 32 when the controller 17 starts moving the mold 9 downward and when the controller 17 finishes moving the mold 9 upward.

As described above, the controller 17 controls the voltage sources 14 and 32 so that the voltages applied to the respective charging plates 13 and 31 decrease when the charging plates 13 and 31 charged with opposite polarities approach each other. Specifically, when the distance in the Z direction of the charging plates 13 and 31 is a second distance less than the first distance, each of the voltage sources 14 and 32 supplies a voltage lower than the voltage for the first distance to the corresponding charging plate. . This prevents the electrostatic force acting between the charging plates 13 and 31 from being excessively increased and causing discharge.

In the fourth embodiment, the voltages supplied from the voltage sources 14 and 32 are changed by the same amount at the same time. The voltage can be controlled so that the potential difference between the capture regions 13b and 31b decreases. At least one of the voltage sources 14 and 32 may change the supply voltage.

In addition, the timing of the voltage control of the charging board 13 may be different from that of the charging board 31. In addition, the voltage sources 14 and 32 may be controlled such that the voltage supplied from each voltage source is reduced before the mold 9 starts to move downward, or the voltage supplied from each voltage source is returned to its original value before the mold 9 returns to the standby position. In this case, a threshold can be set for the distance between the charging pads 13 and 31 in the Z direction. When a discharge may occur, the voltage supplied from each voltage source can be changed.

This voltage can be gradually increased or decreased. To generate a force for attracting the particles 20, a high voltage can be applied to each of the charging plates 13 and 31. To prevent electrical discharge, a low voltage can be applied during the downward movement of the mold 9. In this case, it is necessary to prevent the voltage from being too low (e.g., 0V), because too low a voltage may release the captured particles 20.

[Fifth embodiment]

An increase in the amount of particles 20 captured in the capture regions 13b and 31b results in a decrease in the capacity for capturing new particles 20. Therefore, it is necessary to periodically replace at least one charging board. 10A and 10B depict an exemplary configuration of an imprint apparatus 300 according to a fifth embodiment.

In addition to the same components as the embossing device 100, the embossing device 300 further includes a transport mechanism (replacement mechanism) 40. As depicted in Figure 10B, the transport mechanism 40 has an extendable structure. The transport mechanism 40 automatically transports the charging plate 13 out of the imprint apparatus 300 periodically or at regular intervals (at a predetermined time). As for the replacement timing, for example, the replacement is performed every time the imprint apparatus 300 is operated for a predetermined period or every time a predetermined number of wafers 4 are subjected to pattern formation.

When the transport mechanism 40 is partially under the charging plate 13, the voltage source 14 is controlled to reduce the voltage supplied from the voltage source 14. Therefore, the charging plate 13 can be easily separated. The reason is that the reduction of the voltage supplied from the voltage source 14 allows the force caused by the weight of the charging plate 13 to be greater than the force for attracting the charging plate 13 caused by the electrostatic clip 12.

The transport mechanism 40 includes a portion 41 for supplying the charging plate 13. The area of the portion 41 can be larger than the area of the capture area 13 b of the charging plate 13. Further, the portion 41 of the transport mechanism 40 has a concave surface. The recessed surface can be positively charged. This prevents the particles 20 that tend to flutter due to the decrease in the trapping force in the capture area 13 b during the replacement in the imprint device 300.

Then, the transport mechanism 40 transports and separates the charging plate 13 A different charging plate (not depicted) is inserted into the imprint device 300 and allows the charging plate to be attracted to the electrostatic clip 12.

As described above, similar to the imprint apparatus 100, the imprint apparatus 300 can capture the particles 20 and prevent pattern defects and cracks of the mold 9. The imprint apparatus 300 can prevent a decrease in the force for capturing the particles 20 by replacing the charging plate 13 at an appropriate time.

Because the imprint apparatus 300 includes a transport mechanism 40, the open space in the imprint apparatus 300 can be minimized compared to a case where a person enters the imprint apparatus 300 and replaces the charging plate 13. This reduces the possibility that new particles can enter the imprint device 300 during the replacement of the charging plate 13. Therefore, this reduces the possibility that the particles 20 can be captured by the pattern portion 9a.

[Sixth embodiment]

The imprinted material 4 a in the uncured state may be discharged from the supply unit 16 in the form of fine mist or droplets, and the droplets may be captured by the wafer 4. If the droplets of the uncured imprint material 4a are captured by any pattern forming region to which the imprint material 4a is not supplied, pattern defects may be caused when the pattern is formed in this region. The imprint apparatus can include a charging mechanism (not shown), such as an ionizer, for charging the droplets of the imprint material 4 a such that the charging mechanism is located between the supply unit 16 and the wafer 4.

For example, when a negative charge is applied to the imprint material 4 a near the supply unit 16, the charging plate 13 can capture droplets of the imprint material 4 a. This prevents droplets from being captured by the wafer 4. If the capture force of the charging plate 13 is too strong, the imprint material 4a to be supplied to the wafer 4 will be attracted to the charging plate 13. The voltage source 14 thus controls the voltage applied to the charging plate 13.

[Seventh embodiment]

FIG. 11 depicts an imprint apparatus 400 according to a seventh embodiment. In addition to the same components as the embossing device 100, the embossing device 400 also includes an annular air outlet 45 for forming an air curtain 46. Referring to FIG. 11, the air outlet 45 is suspended to surround the holding mechanism 10. If the flow rate of the gas is adjusted so that the air curtain 46 reaches the base surface plate 2, the particles 20 can be prevented from entering the space 47 defined by the air curtain 46.

Similar to the imprint apparatus 100, the imprint apparatus 400 can capture the particles 20 in the capture regions 13b and 31b, and prevent pattern defects and cracks of the mold 9. In addition, the imprint apparatus 400 can reduce the amount of the particles 20 suspended around the mold 9 by using the air curtain 46, thereby reducing the amount of the particles 20 collected by the charging plate 13 per unit time. Therefore, the imprint apparatus 400 can reduce the replacement frequency of the charging pad 13 and provide the same advantages as the first embodiment.

[Eighth embodiment]

In the mold-side capture unit and the wafer-side capture unit, as long as each of these units provides a charge capture area in any other way, the electrostatic clips 12 and 30 can be eliminated. As long as each of these units provides a charging area at all times, the voltage sources 14 and 32 can be eliminated.

Regarding another wafer-side capture unit, the charging of the capture area provided for capturing the particles 20 will now be described with reference to FIGS. 12A and 12B. 板 50。 Plate 50. FIG. 12A is a plan view of the charging pad 50 when viewed from directly above. FIG. 12B is a cross-sectional view illustrating the charging board 50 of FIG. 12A. As shown in FIG. 12A, the charging board 50 includes a plurality of electric wires 51 arranged coaxially around the placement space for the wafer 4 and a film-shaped dielectric 52 disposed on the electric wires 51 as depicted in FIG. 12B.

The dielectric 52 is arranged to minimize the possibility of discharge when a high voltage is applied to the electric wire 51. In this embodiment, the capture region is set on the dielectric 52 so that the region extends above the region where the electric wires 51 are arranged. The electric wire 51 is arranged on the support 53.

The electric wire 51 is connected to the voltage source 32. When supplied with a voltage from the voltage source 32, the electric wire 51 generates an electrostatic force with which the particles 20 can be captured. The voltage source 32 may change the polarity of the voltage of the electric wire 51 one by one.

The electric wires 51 of the charging board 50 need not be arranged coaxially around the wafer 4. As long as the electric wires 51 surround the space for placing the wafer 4, the number of electric wires 51 and the shape of the electric wires 51 are not limited to those described above. The plurality of electric wires 51 may be configured to be parallel to each other in one direction (see FIG. 13) to surround the placement space of the wafer 4. Alternatively, a single long wire 51 may be folded multiple times to surround the placement space for the wafer 4.

The difference in level between the dielectric 52 and the wafer 4 can be less than or equal to 1 mm. When the gas in the space below the pattern portion 9a is replaced with another gas, the dielectric 52 can guide the other gas to efficiently supply the gas to the space below the pattern portion 9a.

Figure 14 depicts another mold-side capture unit. Similar to the charging plate 50, the charging plate 60 may include a housing 9 for the mold 9 as depicted in FIG. An electric wire 61 in a placement space thereof, and a film-shaped dielectric (not shown) provided on the electric wire 61 so as to face the wafer 4. As long as the electric wires 61 are surrounded for the mold 9, the number of electric wires 61 and the shape of the electric wires 61 are not limited to those described above. The plurality of electric wires 61 may be configured to be parallel to each other in a direction to surround the mold 9. Alternatively, a single long wire 61 may be folded multiple times to surround the mold 9.

The mold-side capture unit and the wafer-side capture unit in this embodiment can be applied to any of the imprint devices 100, 110, 200, 300, and 400.

[Other embodiments]

The term "particle 20" as used herein refers to a substance that is not intended to be related to pattern formation. Examples of the particles 20 include a solid produced from suspended and dried droplets of the imprint material 4a supplied by an inkjet method, a solid produced from suspended and dried droplets of the imprint material 4a supplied by a spin coating method, Fine particles generated from components included in the imprint apparatus, and dust in the imprint apparatus.

In each of the configurations described above, the electrostatic clip 12 is attached to the lower surface of the holding mechanism 10. This configuration is not limited to the above. For example, a support member may be attached to the bridge-type surface plate 8, and the electrostatic clip 12 and the charging plate 13 may be disposed on the support member instead of the holding mechanism 10.

In each of the first to seventh embodiments, the charging plates 13 and 31 are arranged such that the capture regions 13b and 31b extend along a horizontal plane (the surface of the substrate). Capturing of particles 20 by electrostatic force in the present invention The configuration of the area is not limited to the above configuration. The capture areas 13b and 31b respectively surrounding the placement space for the mold 9 and the placement space for the wafer 4 may be inclined with respect to a horizontal plane or may extend vertically.

As for the imprint material, a curable composition (also referred to as "uncured resin") that is cured by receiving curing energy is used. Examples of curing energy include electromagnetic waves and heat. Examples of electromagnetic waves include light whose wavelength is selected in the range of 10 nm to 1 mm, such as infrared light, visible light, and ultraviolet light.

When irradiated with light or when heated, the curable composition is cured. The curable composition cured by light may include at least one polymerizable compound and a photoinitiator, and may include a non-polymerizable compound or a solvent as required. The non-polymerizable compound is at least one compound selected from the group consisting of a sensitizer, a hydrogen donor, an internal mold release agent, a surfactant, an antioxidant, and a polymer component.

The imprint material is applied to the wafer 4 in the form of a film by a spin coater or a slit coater. Alternatively, the imprint material may be applied to the wafer 4 by a liquid injection head in the form of droplets or islands or films that connect the droplets. For example, the imprint material has a hysteresis (hysteresis at 25 ° C.) of 1 mPa * s or more and 100 mPa * s or less.

The above-mentioned first to eighth embodiments and other embodiments may be combined as appropriate to provide an imprint apparatus having a plurality of characteristics.

[Method of making articles]

Figures to be made from a hardened material formed using an imprinting device The case is permanently used as at least part of the article or temporarily used in the manufacture of the article.

Examples of articles include circuit elements, optical elements, micro-electro-mechanical systems (MEMS) elements, recording elements, sensors, and molds.

Examples of circuit components include volatile and non-volatile semiconductor memory, such as dynamic random access memory (DRAM), static RAM (SRAM), flash memory, and magnetoresistive RAM (MRAM), and semiconductor devices, Such as large-scale integrated circuits (LSI), charge-coupled devices (CCD), image sensors, and field-effect programmable gate arrays (FPGAs). Examples of the mold include an imprint mold.

A pattern made of a hardened material is used as at least one component of such an article or temporarily as a photoresist mask. The photoresist mask is removed after etching or ion implantation in the processing wafer 4.

A method of manufacturing an article may include a step of forming a pattern on a substrate by using an imprint apparatus, and a step of processing a substrate having a pattern. Examples of processing steps are etching, ion implantation, oxidation, film formation, deposition, planarization, photoresist peeling, dicing, soldering, and packaging.

While the invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to these disclosed exemplary embodiments. The scope of patent application below is to be interpreted most broadly to encompass all such modifications and equivalent structures and functions.

Claims (13)

An imprint device for forming a pattern of an imprint material on a substrate by using a mold, the device includes a capture unit having a capture area for capturing particles with an electrostatic force so that the capture area surrounds the substrate for the substrate A placement space, wherein the capture area extends along the substrate. For example, the device of claim 1, wherein the capture unit includes a control unit configured to control a voltage charged to the capture area, and wherein the control unit controls the voltage such that the capture area has the same polarity as the mold. Charging. For example, the device of claim 2 in the patent application range, wherein the control unit controls the voltage so that the absolute value of the potential of the capture region is greater than the absolute value of the potential of the mold. For example, the device of claim 1, wherein the capture unit includes a control unit configured to control a voltage charged to the capture area, and wherein the control unit controls the voltage such that the capture area is positively charged. For example, the device of the first patent application range, wherein the capture area is a first capture area and the capture unit is a first capture unit, and wherein the device further includes a second capture unit having an A second capture area such that the second capture area surrounds a placement space for the mold. For example, the device of claim 5 in which the first capture unit includes a first control unit configured to control a voltage charged to the first capture area, wherein the second capture unit includes a second control unit, Configured to control a voltage charged to the second capture area, and wherein the first and second control units charge the first and second capture areas with opposite polarities. The device as claimed in claim 6, wherein at least one of the first and second control units changes the voltage during an operation for forming the pattern. For example, the device of claim 7 in which at least one of the first and second control units controls the voltage so that between the first and second capture areas separated by a second distance less than a first distance The potential difference is less than the potential difference between the first and second capture regions separated by the first distance. For example, the device of the scope of application for a patent further includes a replacement mechanism configured to replace a portion including the capture area with the captured particles at a predetermined time. For example, the device of claim 1, wherein the capture unit includes a wire surrounding the placement space for the substrate and a dielectric disposed on the wire. An imprint method on a substrate by using a mold for forming a pattern of an imprint material, the method includes the following steps: (a) charging a capture area surrounding a placement space for the substrate and extending along the substrate; (b) moving the substrate to a position where the substrate faces the mold; and (c) forming a pattern on the substrate, step (a) includes capturing particles using an electrostatic force generated from the charged capture area. For example, the method of claim 11 in which the capture area is a first capture area, wherein the method further includes step (d) of charging a second capture area surrounding a space for placing the mold, and step (d) ) Implemented before step (b), and wherein the method further includes controlling the charge amount of at least one of the first and second capture areas to reduce the electrostatic force generated from the corresponding one of the first and second capture areas Step (e), and step (e) is performed between steps (d) and (c). A method of manufacturing an article, the method comprising the steps of: forming a pattern on a substrate using an imprint apparatus such as any one of claims 1 to 10; and processing the substrate having the pattern already formed.