TWI680050B - Imprint device, operation method thereof, and article manufacturing method - Google Patents
Imprint device, operation method thereof, and article manufacturing method Download PDFInfo
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- TWI680050B TWI680050B TW106105959A TW106105959A TWI680050B TW I680050 B TWI680050 B TW I680050B TW 106105959 A TW106105959 A TW 106105959A TW 106105959 A TW106105959 A TW 106105959A TW I680050 B TWI680050 B TW I680050B
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- substrate
- mold
- cleaning
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- 238000000034 method Methods 0.000 title claims abstract description 114
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 216
- 238000004140 cleaning Methods 0.000 claims abstract description 187
- 239000000463 material Substances 0.000 claims abstract description 109
- 230000002093 peripheral effect Effects 0.000 claims abstract description 102
- 230000008569 process Effects 0.000 claims abstract description 74
- 239000002245 particle Substances 0.000 claims abstract description 47
- 238000004049 embossing Methods 0.000 claims abstract description 35
- 230000009471 action Effects 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 67
- 230000007246 mechanism Effects 0.000 claims description 50
- 230000005684 electric field Effects 0.000 claims description 22
- 230000003068 static effect Effects 0.000 claims description 20
- 230000008030 elimination Effects 0.000 claims description 18
- 238000003379 elimination reaction Methods 0.000 claims description 18
- 238000012545 processing Methods 0.000 claims description 14
- 230000005611 electricity Effects 0.000 claims description 9
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 230000004044 response Effects 0.000 claims description 2
- 238000010926 purge Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 14
- 238000012546 transfer Methods 0.000 description 10
- 238000003825 pressing Methods 0.000 description 8
- 238000012423 maintenance Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000001179 sorption measurement Methods 0.000 description 6
- 238000000926 separation method Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 239000002861 polymer material Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 230000007723 transport mechanism Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000005260 alpha ray Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- MSSNHSVIGIHOJA-UHFFFAOYSA-N pentafluoropropane Chemical compound FC(F)CC(F)(F)F MSSNHSVIGIHOJA-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000852 hydrogen donor Substances 0.000 description 1
- 230000003100 immobilizing effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/70—Maintenance
- B29C33/72—Cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Abstract
壓印裝置,係使模具與基板上的壓印材接觸的狀態下使該壓印材固化從而在該基板上形成圖案。壓印裝置,係具備:具有保持基板的基板保持區域的基板夾具、以包圍被透過前述基板夾具而保持的基板之側面的方式而配置的周邊構材、就使用包含帶電部的清潔構材而清潔前述周邊構材的至少一部分的區域的清潔處理進行控制的控制部。前述清潔處理,係包含在使前述帶電部與前述周邊構材的至少一部分的區域對向的狀態下使前述清潔構材相對於前述周邊構材而相對移動從而使前述區域的顆粒吸附於前述帶電部的動作。 The embossing device solidifies the embossing material in a state where the mold is in contact with the embossing material on the substrate to form a pattern on the substrate. The imprint apparatus includes a substrate holder having a substrate holding area for holding the substrate, a peripheral member disposed so as to surround a side surface of the substrate held by the substrate holder, and a clean member including a charged portion. The control part which controls the cleaning process which cleans the area | region of the said peripheral structure at least one part. The cleaning process includes moving the cleaning member relative to the peripheral member in a state where the charged portion faces at least a part of the peripheral member, so that particles in the region are adsorbed on the charged member. Department of action.
Description
本發明,係有關壓印裝置及其動作方法以及物品製造方法。 The present invention relates to an imprint apparatus, an operation method thereof, and an article manufacturing method.
在使模具(mold)與配置在基板上的壓印材接觸的狀態下使壓印材固化從而在基板上形成圖案的壓印技術受到注目。於模具,係形成由凹部所成的圖案,使模具與基板上的壓印材接觸時,壓印材會由於毛細管現象而填充於凹部。為了促進往凹部的壓印材的填充,或防止由於空氣(氧)所致的壓印材的固化阻礙,在基板與模具之間的空間,係供應淨化氣體。在對於凹部充分填充壓印材的時間點,對於壓印材賦予光或熱等的能量。據此壓印材固化,形成於模具的由凹部所成的圖案被轉印於基板上的壓印材。在壓印材固化後模具被從壓印材分離。 The imprint technique which solidifies an imprint material while making a mold contact the imprint material arrange | positioned on a board | substrate, and forms a pattern on a board | substrate is attracting attention. In the mold, a pattern formed by the concave portion is formed, and when the mold is in contact with the imprint material on the substrate, the imprint material is filled in the concave portion due to a capillary phenomenon. In order to promote the filling of the embossing material into the recessed portion or to prevent the solidification of the embossing material due to air (oxygen), the space between the substrate and the mold is supplied with a purge gas. At the time when the embossed material is sufficiently filled in the recess, energy such as light or heat is applied to the embossed material. As a result, the imprint material is cured, and the pattern formed by the concave portion formed in the mold is transferred to the imprint material on the substrate. After the imprint material is cured, the mold is separated from the imprint material.
從基板上的已固化的壓印材使模具分離時模具會帶電。由於此帶電而形成的電場使得靜電力(庫侖力)作用於顆粒,據此顆粒被吸引至模具而附著於模具。顆粒,係有時從壓印裝置的腔室的外部侵入,有時亦於腔 室之中由於機械要素的相互的摩擦、機械要素與基板或底版的摩擦等而產生。或者,有時為了在基板上配置未固化的壓印材而從吐出口吐出壓印材時產生壓印材的霧氣,此壓印材固化因而產生顆粒。 The mold is charged when the mold is separated from the cured imprint material on the substrate. The electric field formed by this charging causes electrostatic force (Coulomb force) to act on the particles, whereby the particles are attracted to the mold and adhere to the mold. Particles sometimes invade from the outside of the chamber of the imprint device The chamber is caused by friction between mechanical elements, friction between the mechanical element and the substrate or the substrate, and the like. Alternatively, when the imprinted material is ejected from the discharge port in order to dispose the uncured imprinted material on the substrate, a mist of the imprinted material is generated, and the imprinted material is solidified to generate particles.
在日本專利特開2014-175340號公報,係記載:在模具設置異物捕捉區域,使該異物捕捉區域帶電,從而在往轉印位置的基板的搬送時,將存在於環境氣體中及/或基板上的異物除去。在日本專利特開2015-149390號公報,係記載:在模具的第1面設置圖案部與第1導電膜,在第2面設置第2導電膜,使電荷蓄積於第1導電膜及第2導電膜從而將圖案部的附近的顆粒吸引至第1導電膜。 In Japanese Patent Laid-Open No. 2014-175340, it is described that a foreign object capturing area is provided in a mold, and the foreign object capturing area is charged, so that it will exist in the ambient gas and / or the substrate when the substrate is transferred to the transfer position. Foreign matter is removed. In Japanese Patent Laid-Open No. 2015-149390, it is described that a pattern portion and a first conductive film are provided on a first surface of a mold, and a second conductive film is provided on a second surface so that charges are accumulated in the first conductive film and the second The conductive film attracts particles in the vicinity of the pattern portion to the first conductive film.
顆粒附著於模具的狀態下,使模具與基板上的壓印材接觸而進行圖案的形成時,形成具有缺陷的圖案,或基板及/或模具可能破損。另一方面,為了將淨化氣體有效地供應至基板與模具之間的空間,正檢討以包圍基板之側面的方式配置周邊構材。透過設置周邊構材,使得可縮小模具的下方的空間的體積,可將淨化氣體有效地維持於該空間。 When particles are attached to the mold and a pattern is formed by contacting the mold with the imprint material on the substrate, a defective pattern is formed, or the substrate and / or the mold may be damaged. On the other hand, in order to efficiently supply the purge gas to the space between the substrate and the mold, there is a review of arranging peripheral materials so as to surround the side surfaces of the substrate. By providing a peripheral structure, the volume of the space below the mold can be reduced, and the purge gas can be effectively maintained in the space.
然而,若配置周邊構材,則在從基板上的壓印材使模具分離後使基板移動時,周邊構材相對於模具,以近的距離而對向。靜電力,係反比例於距離的平方,故作用於周邊構材上的顆粒的靜電力,會相當大於無周邊構材的情況下的作用於基板保持部上的顆粒的靜電力。在周 邊構材,會歷經多數個基板的處理而附著顆粒。如此的顆粒之中對於周邊構材以弱的附著力而附著的顆粒,係由於作用於其的靜電力而容易從周邊構材脫離而附著於模具。 However, if a peripheral member is disposed, when the mold is separated from the imprint material on the substrate and the substrate is moved, the peripheral member faces the mold at a short distance. The electrostatic force is inversely proportional to the square of the distance, so the electrostatic force acting on the particles on the surrounding structure will be considerably larger than the electrostatic force acting on the particles on the substrate holding portion without the surrounding structure. In the week The side members are subjected to the processing of a plurality of substrates and adhere to particles. Among such particles, particles adhered to the peripheral structure with a weak adhesion force are easily detached from the peripheral structure and attached to the mold due to the electrostatic force acting on them.
本發明,係提供在為了減低由於容易從周邊構材脫離的顆粒而發生的圖案缺陷、基板及/或模具的破損等方面有利的技術。 The present invention provides a technique that is advantageous in terms of reducing pattern defects, breakage of a substrate and / or a mold, and the like, which are caused by particles that are easily detached from a peripheral structure.
本發明的1個形態,係有關在使模具與基板上的壓印材接觸的狀態下使該壓印材固化從而在該基板上形成圖案的壓印裝置,其係具備:具有保持基板的基板保持區域的基板夾具、以包圍被透過前述基板夾具而保持的基板之側面的方式而配置的周邊構材、就使用包含帶電部的清潔構材而清潔前述周邊構材的至少一部分的區域的清潔處理進行控制的控制部;前述清潔處理,係包含在使前述帶電部與前述周邊構材的至少一部分的區域對向的狀態下使前述清潔構材相對於前述周邊構材而相對移動從而使前述區域的顆粒吸附於前述帶電部的動作。 One aspect of the present invention relates to an imprint apparatus that solidifies an imprint material on a substrate and forms a pattern on the substrate in a state where the mold is in contact with the imprint material on the substrate, and includes: a substrate holding region having a substrate; A substrate holder, a peripheral member disposed so as to surround a side surface of a substrate held by the substrate holder, and a cleaning process for cleaning at least a part of the peripheral member using a cleaning member including a charged portion. A control unit for controlling; the cleaning process includes moving the cleaning member relative to the peripheral member in a state where the charged portion faces at least a part of the peripheral member, so that the The action of the particles being adsorbed on the charged portion.
IMP‧‧‧壓印裝置 IMP‧‧‧ Imprint Device
100‧‧‧模具 100‧‧‧mould
101‧‧‧基板 101‧‧‧ substrate
102‧‧‧基板夾具 102‧‧‧Substrate fixture
113‧‧‧周邊構材 113‧‧‧Peripheral structures
131‧‧‧支撐體 131‧‧‧ support
132-135‧‧‧帶電部 132-135‧‧‧charged department
150‧‧‧顆粒 150‧‧‧ particles
170‧‧‧清潔構材 170‧‧‧Clean materials
[圖1]示意性針對本發明的1個實施形態的壓印裝置的一部分的構成進行繪示的圖。 1 is a diagram schematically illustrating a configuration of a part of an imprint apparatus according to an embodiment of the present invention.
[圖2]示意性針對本發明的1個實施形態的壓印裝置 的構成進行繪示的圖。 [Fig. 2] An imprint apparatus schematically according to an embodiment of the present invention The composition is shown in the figure.
[圖3A]例示清潔構材的圖。 3A is a view illustrating a cleaning member.
[圖3B]例示清潔構材的圖。 3B is a view illustrating a cleaning member.
[圖3C]例示清潔構材的圖。 3C is a view illustrating a cleaning member.
[圖4]針對保持清潔構材的保持部進行說明的圖。 FIG. 4 is a diagram illustrating a holding portion that holds a cleaning member.
[圖5]例示周邊構材的圖。 [Fig. 5] A view illustrating a peripheral member.
[圖6A]例示周邊構材的清潔處理的圖。 6A is a view illustrating a cleaning process of a peripheral member.
[圖6B]例示周邊構材的清潔處理的圖。 6B is a view illustrating a cleaning process of a peripheral member.
[圖6C]例示周邊構材的清潔處理的圖。 6C is a view illustrating a cleaning process of a peripheral member.
[圖6D]例示周邊構材的清潔處理的圖。 6D is a view illustrating a cleaning process of a peripheral member.
[圖7]例示周邊部的清潔程序的圖。 [Fig. 7] A diagram illustrating a cleaning procedure of a peripheral portion.
[圖8]例示基板夾具的清潔處理的圖。 [Fig. 8] A diagram illustrating a cleaning process of a substrate holder.
[圖9]例示基板夾具的清潔程序的圖。 9 A diagram illustrating a cleaning procedure of a substrate holder.
[圖10]示意性針對本發明的第2實施形態的壓印裝置的構成進行繪示的圖。 10 is a diagram schematically illustrating a configuration of an imprint apparatus according to a second embodiment of the present invention.
[圖11]示出清潔構材的構成例的圖。 FIG. 11 is a diagram illustrating a configuration example of a cleaning member.
[圖12]例示本發明的第2實施形態的壓印裝置的動作的圖。 12 is a diagram illustrating an operation of an imprint apparatus according to a second embodiment of the present invention.
[圖13]例示其他清潔構材的構成的圖。 13 A diagram illustrating a configuration of another cleaning member.
[圖14]例示另一個清潔構材的構成的圖。 14 A diagram illustrating a configuration of another cleaning member.
[圖15A]針對透過示於圖14的清潔構材下的周邊構材的清潔進行說明的圖。 FIG. 15A is a diagram illustrating cleaning through a peripheral member under the cleaning member shown in FIG. 14. FIG.
[圖15B]針對透過示於圖14的清潔構材下的周邊構材的清潔進行說明的圖。 FIG. 15B is a diagram illustrating cleaning through a peripheral member under the cleaning member shown in FIG. 14.
[圖16A]針對本發明的第3實施形態的模具的除電進行繪示的圖。 FIG. 16A is a diagram illustrating static elimination of a mold according to a third embodiment of the present invention. FIG.
[圖16B]針對本發明的第3實施形態的模具的除電進行繪示的圖。 FIG. 16B is a diagram illustrating static elimination of a mold according to a third embodiment of the present invention.
以下,一面參照附圖一面針對本發明的壓印裝置及其動作方法通過其例示的實施形態進行說明。 Hereinafter, an imprint apparatus and an operation method thereof according to the present invention will be described with reference to the accompanying drawings with reference to the illustrated embodiments.
於圖2,係例示本發明的1個實施形態的壓印裝置IMP的構成。壓印裝置IMP,係將模具100的圖案透過壓印而轉印於基板101。換言之,壓印裝置IMP,係將模具100的圖案透過壓印而轉印於基板101上的壓印材(被轉印材)。壓印,係表示使模具接觸於壓印材並使該壓印材固化。模具100,係具有以凹部而構成的圖案。使模具100接觸於基板101上的壓印材(未固化樹脂)使得壓印材被填充於圖案的凹部。在此狀態下,對於壓印材賦予使其固化的能量,使得壓印材固化。據此模具100的圖案被轉印於壓印材,由已固化的壓印材所成的圖案被形成於基板101上。 FIG. 2 illustrates a configuration of an imprint apparatus IMP according to an embodiment of the present invention. The imprint apparatus IMP transfers the pattern of the mold 100 to the substrate 101 through imprinting. In other words, the imprinting device IMP is an imprinting material (a material to be transferred) that transfers the pattern of the mold 100 onto the substrate 101 by imprinting. Imprint means contacting a mold with an imprint material and curing the imprint material. The mold 100 has a pattern formed by a recess. The mold 100 is brought into contact with the imprint material (uncured resin) on the substrate 101 so that the imprint material is filled in the concave portion of the pattern. In this state, energy is given to the imprint material for curing, so that the imprint material is cured. Accordingly, the pattern of the mold 100 is transferred to the imprint material, and the pattern formed by the cured imprint material is formed on the substrate 101.
壓印材,係被賦予使其固化的能量因而固化的固化性組成物。壓印材,係有時表示固化的狀態,有時亦表示未固化的狀態。固化用的能量方面,係使用例如電磁波、熱等。電磁波,係例如從10nm以上、1mm以下的範圍選擇其波長的光(例如,紅外線、可見光線、紫外 線)。 The embossing material is a curable composition that is cured by being given energy to cure it. The embossed material sometimes indicates a cured state and sometimes indicates an uncured state. For the energy for curing, for example, electromagnetic waves and heat are used. Electromagnetic waves, for example, light having a wavelength selected from a range of 10 nm to 1 mm (for example, infrared rays, visible rays, ultraviolet rays, etc.) line).
固化性組成物,於一般情況下,係由於光的照射或由於加熱而固化的組成物。此等之中由於光而固化的光固化性組成物,係至少可含有聚合性化合物及光聚合引發劑。此外,光固化性組成物,係可附加地含有非聚合性化合物或溶劑。非聚合性化合物,係例如可為由增感劑、供氫體、內添型脫模劑、界面活性劑、抗氧化劑、聚合物成分等的群組中所選擇的至少一種。 The curable composition is generally a composition that is cured by light irradiation or heating. Among these, the photocurable composition cured by light may contain at least a polymerizable compound and a photopolymerization initiator. The photocurable composition may additionally contain a non-polymerizable compound or a solvent. The non-polymerizable compound may be, for example, at least one selected from the group consisting of a sensitizer, a hydrogen donor, an internal release agent, a surfactant, an antioxidant, and a polymer component.
本說明書及附圖,係於使平行於基板101的表面的方向為XY平面的XYZ座標系中表示方向。使分別平行於XYZ座標系的X軸、Y軸、Z軸的方向為X方向、Y方向、Z方向,使繞X軸的旋轉、繞Y軸的旋轉、繞Z軸的旋轉分別為θ X、θ Y、θ Z。關於X軸、Y軸、Z軸的控制或驅動,係分別表示關於平行於X軸的方向、平行於Y軸的方向、平行於Z軸的方向的控制或驅動。此外,關於θ X軸、θ Y軸、θ Z軸的控制或驅動,係分別表示關於繞平行於X軸的軸的旋轉、繞平行於Y軸的軸的旋轉、繞平行於Z軸的軸的旋轉的控制或驅動。此外,位置係可基於X軸、Y軸、Z軸的座標而確定的資訊,姿勢係能以相對於θ X軸、θ Y軸、θ Z軸的相對旋轉而確定的資訊。定位,係表示控制位置及/或姿勢。 The present specification and drawings refer to directions in an XYZ coordinate system in which a direction parallel to the surface of the substrate 101 is an XY plane. Let the directions parallel to the X, Y, and Z axes of the XYZ coordinate system be X, Y, and Z directions, and make rotations about the X axis, rotations about the Y axis, and rotations about the Z axis θ X , Θ Y, θ Z. The control or drive of the X-axis, Y-axis, and Z-axis means control or drive of a direction parallel to the X-axis, a direction parallel to the Y-axis, and a direction parallel to the Z-axis, respectively. In addition, the control or drive of the θ X axis, θ Y axis, and θ Z axis refers to rotation about an axis parallel to the X axis, rotation about an axis parallel to the Y axis, and about an axis parallel to the Z axis, respectively. Control or drive of the rotation. In addition, the position is information that can be determined based on the coordinates of the X-axis, Y-axis, and Z-axis, and the posture can be determined by relative rotation with respect to the θ X-axis, θ Y-axis, and θ Z-axis. Positioning means controlling the position and / or posture.
壓印裝置IMP係具備定位基板101的基板驅動機構SDM,基板驅動機構SDM係可包含例如基板夾具102、周邊構材113、微動機構114、粗動機構115及基底 構造體116。基板夾具102,係具有保持基板101的基板保持區域,可透過吸附(例如,真空吸附、靜電吸附)而保持基板101。微動機構114,係可包含支撐基板夾具102及周邊構材113的微動台及驅動該微動台的驅動機構。周邊構材113,係以包圍基板101之側面的方式,被配置於配置基板101的區域的周邊。周邊構材113,係可具有與基板101上表面相等的高度之上表面。周邊構材113,係亦可被分割為複數個構材。此外,該複數個構材的全部或一部分,係可被彼此隔離而配置,亦可被以彼此接觸的方式而配置。 The imprint apparatus IMP is provided with a substrate driving mechanism SDM for positioning the substrate 101. The substrate driving mechanism SDM may include, for example, a substrate holder 102, a peripheral structure 113, a micro-motion mechanism 114, a coarse-motion mechanism 115 and a substrate 结构 体 116。 Structure 116. The substrate holder 102 has a substrate holding region that holds the substrate 101 and can hold the substrate 101 by adsorption (for example, vacuum adsorption or electrostatic adsorption). The micro-movement mechanism 114 may include a micro-movement stage supporting the substrate holder 102 and the peripheral structure 113 and a driving mechanism for driving the micro-movement stage. The peripheral member 113 is disposed around the area where the substrate 101 is disposed so as to surround the side surface of the substrate 101. The peripheral structure 113 may have an upper surface having the same height as the upper surface of the substrate 101. The peripheral structure 113 may be divided into a plurality of structures. In addition, all or a part of the plurality of structural members may be arranged while being isolated from each other, or may be arranged so as to be in contact with each other.
微動機構114,係微驅動基板夾具102從而微驅動基板101的機構。粗動機構115,係粗驅動微動機構114從而粗驅動基板101的機構。基底構造體116,係支撐粗動機構115、微動機構114、基板夾具102及周邊構材113。基板驅動機構SDM,係例如得以就複數個軸(例如,X軸、Y軸、θ Z軸的3軸)驅動基板101的方式而構成。微動機構114的被與基板夾具102一體化的部分(微動台)的位置,係透過干涉計等的計測器117從而監控。 The micro-movement mechanism 114 is a mechanism for micro-driving the substrate holder 102 and micro-driving the substrate 101. The coarse movement mechanism 115 is a mechanism for coarsely driving the fine movement mechanism 114 to coarsely drive the substrate 101. The base structure 116 supports a coarse movement mechanism 115, a fine movement mechanism 114, a substrate holder 102, and a peripheral structure 113. The substrate driving mechanism SDM is configured, for example, so as to drive the substrate 101 with respect to a plurality of axes (for example, three axes of an X axis, a Y axis, and a θ Z axis). The position of the micro-movement mechanism 114 that is integrated with the substrate holder 102 (micro-motion stage) is monitored by a measuring device 117 such as an interferometer.
壓印裝置IMP係具備將模具100定位的模具驅動機構MDM,模具驅動機構MDM係可包含模具夾具110、驅動機構109及周邊構材151。周邊構材151,係以包圍模具100之側面的方式,被配置於配置模具100的區域的周邊。模具驅動機構MDM及周邊構材151,係可被 透過支撐構造體108而支撐。模具夾具110,係可透過吸附(例如,真空吸附、靜電吸附)而保持模具100。驅動機構109,係透過驅動模具夾具110從而驅動模具100。模具驅動機構MDM,係例如可被構成為就複數個軸(例如,X軸、Y軸、Z軸、θ X軸、θ Y軸、θ Z軸的6軸)驅動模具100。 The imprint apparatus IMP is provided with a mold driving mechanism MDM for positioning the mold 100. The mold driving mechanism MDM may include a mold clamp 110, a driving mechanism 109, and a peripheral member 151. The peripheral member 151 is arranged around the area where the mold 100 is arranged so as to surround the side surface of the mold 100. The mold driving mechanism MDM and the surrounding structure 151 can be It is supported by the support structure 108. The mold jig 110 is capable of holding the mold 100 by adsorption (for example, vacuum adsorption or electrostatic adsorption). The driving mechanism 109 drives the mold 100 by driving the mold holder 110. The mold driving mechanism MDM may be configured, for example, to drive the mold 100 with respect to a plurality of axes (for example, 6 axes of X axis, Y axis, Z axis, θ X axis, θ Y axis, and θ Z axis).
基板驅動機構SDM及模具驅動機構MDM,係構成進行基板101與模具100的相對定位的驅動部。驅動部,係就X軸、Y軸、θ X軸、θ Y軸及θ Z軸調整基板101與模具100的相對位置以外,亦就Z軸調整基板101與模具100的相對位置。就Z軸的基板101與模具100的相對位置的調整,係包含基板101上的壓印材與模具100的接觸及分離的動作。 The substrate driving mechanism SDM and the mold driving mechanism MDM constitute a driving unit that performs relative positioning of the substrate 101 and the mold 100. The driving unit adjusts the relative position of the substrate 101 and the mold 100 with respect to the X axis, the Y axis, the θ X axis, the θ Y axis, and the θ Z axis in addition to the Z axis. The adjustment of the relative position of the substrate 101 and the mold 100 in the Z axis includes the operation of contacting and separating the imprint material on the substrate 101 and the mold 100.
壓印裝置IMP,係可具備對基板101上塗佈、配置或供應未固化的壓印材的分配器(供應部)111。分配器111,係例如可被構成為將壓印材以複數個液滴的形態配置於基板101上。分配器111,係可被透過支撐構造體108而支撐。 The imprint apparatus IMP may include a dispenser (supply section) 111 for coating, arranging, or supplying an uncured imprint material on the substrate 101. The dispenser 111 may be configured, for example, to arrange the imprint material on the substrate 101 in the form of a plurality of droplets. The distributor 111 is supported by a support structure 108.
壓印裝置IMP,係可具備對基板101上的壓印材照射UV光等的光從而使該壓印材固化的固化部104。壓印裝置IMP係另外可具備供於觀察壓印的情況用的相機103。從固化部104所射出的光,係可被鏡105反射,透射模具100而照射於壓印材。相機103,係可被構成為經由模具100及鏡105而觀察壓印的情況,例如觀察 壓印材與模具100的接觸狀態等。 The imprint apparatus IMP may include a curing unit 104 that irradiates the imprint material on the substrate 101 with light such as UV light to cure the imprint material. The imprint apparatus IMP may further include a camera 103 for observing the state of imprint. The light emitted from the curing section 104 can be reflected by the mirror 105 and transmitted through the mold 100 to irradiate the imprint material. The camera 103 may be configured to observe the imprint situation through the mold 100 and the mirror 105, for example, to observe The contact state of the imprint material with the mold 100 and the like.
壓印裝置IMP,係可具備供於對基板101的標示與模具100的標示的相對位置進行檢測用的對準範圍顯示器107a、107b。對準範圍顯示器107a、107b,係可被配置於被透過支撐構造體108而支撐的上部構造體106。壓印裝置IMP,係可具備供於對基板101的複數個標示的位置進行檢測用的離軸檢測器112。離軸檢測器112,係可被透過支撐構造體108而支撐。 The imprint apparatus IMP may include alignment range displays 107 a and 107 b for detecting a relative position of the mark of the substrate 101 and the mark of the mold 100. The alignment range displays 107 a and 107 b are arranged on the upper structure 106 supported by the support structure 108. The imprint apparatus IMP may include an off-axis detector 112 for detecting a plurality of marked positions on the substrate 101. The off-axis detector 112 is supported by the support structure 108.
壓印裝置IMP,係可具備1或複數個淨化氣體供應部118a、118b。淨化氣體供應部118a、118b,係可被以包圍模具夾具110的方式配置於模具夾具110的周圍。淨化氣體供應部118a、118b,係對基板101與模具100之間的空間供應淨化氣體。淨化氣體供應部118a、118b,係例如可被透過支撐構造體108而支撐。淨化氣體方面,係可使用不阻礙壓印材的固化的氣體,例如可使用包含氦氣、氮氣及凝結性氣體(例如,五氟丙烷(PFP))中之至少1者的氣體。設置周邊構材113、151的構成,係在為了將基板101與模具100之間的空間有效地以淨化氣體填滿方面有利。 The imprint apparatus IMP may include one or a plurality of purge gas supply units 118a and 118b. The purge gas supply portions 118 a and 118 b may be arranged around the mold holder 110 so as to surround the mold holder 110. The purge gas supply units 118 a and 118 b supply a purge gas to a space between the substrate 101 and the mold 100. The purge gas supply portions 118 a and 118 b are supported by the support structure 108, for example. As for the purge gas, a gas that does not hinder the solidification of the imprint material can be used. For example, a gas containing at least one of helium, nitrogen, and a condensable gas (for example, pentafluoropropane (PFP)) can be used. The configuration in which the peripheral members 113 and 151 are provided is advantageous in that the space between the substrate 101 and the mold 100 is effectively filled with purge gas.
壓印裝置IMP,係具備腔室190,上述的各構成要素係可被配置於腔室190之中。壓印裝置IMP,係另外可具備主控制部(控制部)126、壓印控制部120、照射控制部121、顯示器控制部122、分配器控制部123、淨化氣體控制部124、基板控制部125。主控制部126, 係控制壓印控制部120、照射控制部121、顯示器控制部122、分配器控制部123、淨化氣體控制部124、基板控制部125。壓印控制部120,係控制模具驅動機構MDM。照射控制部121,係控制固化部104。顯示器控制部122,係控制對準範圍顯示器107a、107b及離軸檢測器112。分配器控制部123,係控制分配器111。淨化氣體控制部124,係控制淨化氣體供應部118a、118b。基板控制部125,係控制基板驅動機構SDM。 The imprint apparatus IMP includes a chamber 190, and each of the above-mentioned constituent elements may be disposed in the chamber 190. The imprint apparatus IMP may further include a main control section (control section) 126, an imprint control section 120, an irradiation control section 121, a display control section 122, a distributor control section 123, a purge gas control section 124, and a substrate control section 125. . Main control unit 126, The system controls the imprint control unit 120, the irradiation control unit 121, the display control unit 122, the dispenser control unit 123, the purge gas control unit 124, and the substrate control unit 125. The imprint control unit 120 controls the mold driving mechanism MDM. The irradiation control unit 121 controls the curing unit 104. The display control unit 122 controls the alignment range displays 107 a and 107 b and the off-axis detector 112. The distributor control unit 123 controls the distributor 111. The purge gas control unit 124 controls the purge gas supply units 118a and 118b. The substrate control unit 125 controls the substrate driving mechanism SDM.
於圖1,係示意性示出圖2的壓印裝置IMP的一部分。於腔室190的內部空間,係可能侵入顆粒150。此外,在腔室190之中,係可能由於機械要素的相互的摩擦、機械要素與基板或底版的摩擦等而產生顆粒150。或者,分配器111為了在基板101上配置未固化的壓印材而從吐出口吐出壓印材時產生壓印材的霧氣,此壓印材固化使得可能產生顆粒150。 FIG. 1 schematically illustrates a part of the imprint apparatus IMP of FIG. 2. The internal space of the chamber 190 may penetrate the particles 150. In addition, in the chamber 190, particles 150 may be generated due to friction between mechanical elements, friction between the mechanical elements and the substrate or the substrate, and the like. Alternatively, in order to arrange the uncured embossing material on the substrate 101, the dispenser 111 generates a mist of the embossing material when the embossing material is ejected from the discharge port, and solidification of the embossing material may generate particles 150.
顆粒150,係可能附著於周邊構材113之上表面等。附著於周邊構材113的顆粒150的附著的強度係存在各種。附著於周邊構材113的顆粒150不從周邊構材113脫離的情況下,由於顆粒150附著於基板101或模具100所致的圖案缺陷、基板及/或模具的破損等係不會發生。另一方面,附著於周邊構材113的顆粒150從周邊構材113脫離時,可能附著於基板101或模具100,或夾於基板101與模具100之間。 The particles 150 may be attached to the upper surface of the peripheral structure 113 and the like. There are various strengths of adhesion of the particles 150 attached to the peripheral structure 113. When the particles 150 adhering to the peripheral structure 113 are not detached from the peripheral structure 113, pattern defects due to the particles 150 adhering to the substrate 101 or the mold 100, and damage to the substrate and / or the mold will not occur. On the other hand, when the particles 150 attached to the peripheral structure 113 are detached from the peripheral structure 113, they may adhere to the substrate 101 or the mold 100 or be sandwiched between the substrate 101 and the mold 100.
從基板101上的已固化的壓印材使模具100 分離時模具100會帶電。由於此帶電而形成的電場使得靜電力(庫侖力)作用於顆粒150,據此顆粒150被吸引至模具100而附著於模具100。周邊構材113之上表面,係具有與基板101之上表面相同的高度,故模具100與周邊構材113之上表面的距離相當小。靜電力,係反比例於距離的平方,故作用於周邊構材113上的顆粒的靜電力,係成為比在無周邊構材113的情況下的作用於基板夾具102及存在於其周邊的構材的靜電力相當大者。於周邊構材113,係由於歷經多數個基板101的處理因而可能附著多數個顆粒150。 Make the mold 100 from the solidified imprint material on the substrate 101 The mold 100 is charged during separation. The electric field formed by this charging causes an electrostatic force (Coulomb force) to act on the particles 150, and accordingly the particles 150 are attracted to the mold 100 and adhere to the mold 100. The upper surface of the peripheral structure 113 has the same height as the upper surface of the substrate 101, so the distance between the mold 100 and the upper surface of the peripheral structure 113 is relatively small. The electrostatic force is inversely proportional to the square of the distance. Therefore, the electrostatic force acting on the particles on the surrounding structure 113 is more effective than the substrate fixture 102 and the structure existing around it without the surrounding structure 113. The electrostatic force is considerable. Since the peripheral structure 113 is processed by the plurality of substrates 101, a plurality of particles 150 may adhere to the peripheral structure 113.
所以,在壓印裝置IMP,係執行使用包含帶電部的清潔構材170而清潔周邊構材113的至少一部分的區域的清潔處理。清潔處理,係主控制部(控制部)126控制包含帶電部的清潔構材170的驅動從而進行。清潔處理,係可包含如下動作:在使清潔構材170的帶電部與周邊構材113的至少一部分的區域對向的狀態下,使清潔構材170相對於該區域進行相對移動從而使該區域的顆粒150吸附於該帶電部。於此,以弱的附著力附著於周邊構材113的顆粒150,係由於包含帶電部的清潔構材170相面對因而由於靜電力從周邊構材113脫離而附著於該帶電部。於一般情況下,清潔處理係在壓印材未存在於基板101上的狀態下實施,分配器111在清潔處理的期間中係不對基板101上供應壓印材。 Therefore, in the imprint apparatus IMP, a cleaning process for cleaning an area of at least a part of the peripheral structure 113 using the cleaning structure 170 including a charged portion is performed. The cleaning process is performed by the main control section (control section) 126 controlling the driving of the cleaning member 170 including the charging section. The cleaning process may include the following operation: in a state where the electrification part of the cleaning member 170 and at least a part of the peripheral member 113 face each other, the cleaning member 170 is relatively moved relative to the region to make the region The particles 150 are adsorbed on the charged portion. Here, the particles 150 that adhere to the peripheral structure 113 with a weak adhesive force are attached to the charged portion due to the electrostatic force detached from the peripheral structure 113 because the cleaning structure 170 including the charged portion faces each other. In general, the cleaning process is performed in a state where the imprint material is not present on the substrate 101, and the dispenser 111 does not supply the imprint material to the substrate 101 during the cleaning process.
於圖1,係雖示出在基板101存在於基板夾具 102的基板保持區域1021上的狀態下實施清潔處理的樣子,惟亦可在基板101不存在於基板保持區域1021上的狀態下進行清潔處理。基板保持區域1021,係可為其整體與基板101接觸的區域,亦可為其一部分與基板101接觸的區域。後者方面,與基板101接觸的一部分,係可具有銷及/或環。 In FIG. 1, the substrate 101 is shown in the substrate holder. The cleaning process may be performed in a state where the substrate holding region 1021 of 102 is performed. However, the cleaning process may be performed in a state where the substrate 101 is not present on the substrate holding region 1021. The substrate holding region 1021 may be a region in which the entire substrate is in contact with the substrate 101 or a region in which a portion thereof is in contact with the substrate 101. In the latter aspect, a part in contact with the substrate 101 may have a pin and / or a ring.
於此,作為一例,考量從基板101上的已固化的壓印材使模具100分離從而使模具100帶電為-3KV的情況。周邊構材113係被接地而為接地電位。周邊構材113與模具100之間隙,係採1mm。此情況下的電場的方向係朝上(Z軸的正的方向),電場的強度係3kV/mm。在此例,係優選上以清潔構材170的帶電部的電位V成為比-3kV低的電位(V<-3kV)的方式使該帶電部帶電。在清潔處理,係使清潔構材170的帶電部帶電,使該帶電部與周邊構材113的至少一部分的區域對向的狀態下清潔構材170被相對於該區域而相對移動。由於此清潔處理使得以弱的附著力而附著於該區域的顆粒150被從該區域分離,予以拉近至該帶電部,被透過該帶電部而捕獲。 Here, as an example, consider a case where the mold 100 is separated from the solidified imprint material on the substrate 101 and the mold 100 is charged to -3KV. The peripheral member 113 is grounded to a ground potential. The gap between the peripheral structure 113 and the mold 100 is 1 mm. The direction of the electric field in this case is upward (positive direction of the Z axis), and the intensity of the electric field is 3 kV / mm. In this example, it is preferable to charge the charged portion of the cleaning member 170 such that the potential V of the charged portion of the cleaning member 170 becomes lower than -3 kV (V <-3 kV). In the cleaning process, the charging portion of the cleaning member 170 is charged, and the cleaning member 170 is relatively moved with respect to the region in a state where the charging member faces at least a part of the peripheral member 113. Due to this cleaning process, the particles 150 attached to the area with a weak adhesion force are separated from the area, are drawn close to the charged part, and are captured through the charged part.
縮小清潔處理中的周邊構材113與清潔構材170的帶電部之間隙,使得可增加周邊構材113與帶電部之間的電場,可提高清潔處理的效果。例如,使為了透過分配器111對基板101上供應壓印材而使基板101移動時的模具100與周邊構材113之間隙為GN、使清潔處理中的周邊構材113與帶電部之間隙為GC時,設為GN> GC。清潔處理中的周邊構材113與清潔構材170的帶電部之間隙,係例如可採0.8mm以下。 The gap between the surrounding structure 113 and the charged portion of the cleaning structure 170 during the cleaning process is reduced, so that the electric field between the surrounding structure 113 and the charged portion can be increased, and the effect of the cleaning process can be improved. For example, the gap between the mold 100 and the surrounding structure 113 when the substrate 101 is moved to supply the embossed material to the substrate 101 through the dispenser 111 is set to GN, and the gap between the surrounding structure 113 and the charged portion during cleaning is set to GC Set to GN> GC. The clearance between the peripheral member 113 and the electrified portion of the cleaning member 170 during the cleaning process can be, for example, 0.8 mm or less.
清潔構材170,係可被透過保持部119而保持。保持部119,係具有可保持清潔構材170的構造者即可,例如可為機械臂等的可動構材,亦可為被固定的構材,模具夾具110被替代亦可。 The cleaning member 170 can be held by the holding portion 119. The holding portion 119 is only required to have a structure capable of holding the clean structural member 170. For example, the holding portion 119 may be a movable structural member such as a robot arm, or a fixed structural member, and the mold jig 110 may be replaced.
於圖3A~3C,係示出清潔構材170之例。在示於圖3A的第1例,清潔構材170係包含支撐體131、被透過支撐體131而支撐的帶電部132。帶電部132,係例如可透過使以石英等而構成的介電構材帶電從而準備。介電構材的帶電,係使該介電構材與配置於虛設基板(dummy substrate)上的壓印材接觸,透過固化部104使該壓印材固化後將該介電構材從該壓印材分離從而完成。虛設基板,係代替基板101而置於基板夾具102上的基板。支撐體131與帶電部132係能以相同材料而構成。 An example of the cleaning member 170 is shown in FIGS. 3A to 3C. In the first example shown in FIG. 3A, the cleaning member 170 includes a support body 131 and a charging portion 132 supported by the support body 131. The charging section 132 is prepared by, for example, charging a dielectric structural material made of quartz or the like. The charging of the dielectric structure material is to contact the dielectric structure material with an imprint material disposed on a dummy substrate, and to cure the imprint material through the curing part 104 to separate the dielectric structure material from the imprint material. Thereby. The dummy substrate is a substrate placed on a substrate holder 102 instead of the substrate 101. The support body 131 and the charging portion 132 can be made of the same material.
與壓印材接觸的表面積大較可增加帶電量,故帶電部132係可在表面具有圖案(凹凸)。包含支撐體131及帶電部132的清潔構材170,係亦可為例如模具100的不用的物品(例如,用畢或規格外的模具)。或者,包含支撐體131及帶電部132的清潔構材170,係可為圖案的密度比供製造物品用的模具100高的對帶電量的增加有利的構材(例如,為了壓印裝置IMP的檢查用而使用的模具的不用的物品)。另外,不用的物品,係表示不為了本來的目的而使用的物品。 A larger surface area in contact with the imprint material can increase the amount of charge, so the charged portion 132 can have a pattern (concavity and convexity) on the surface. The cleaning member 170 including the support body 131 and the electrified portion 132 may be an unused article such as the mold 100 (for example, a used or out-of-specification mold). Alternatively, the cleaning member 170 including the support 131 and the charging portion 132 may be a member having a higher pattern density than the mold 100 for manufacturing articles, which is advantageous for increasing the amount of charge (for example, for the imprint device IMP Unused items of the mold used for inspection). In addition, unused items are items that are not used for their original purpose.
在示於圖3B的第2例,清潔構材170係包含支撐體131、被透過支撐體131而支撐的駐極體133。駐極體,係持續形成電場的物質,例如透過將電荷植入高分子材料等的介電體進行固定從而形成。往駐極體的電荷的植入方法方面,係存在一面對夾著熔化狀態的高分子材料的電極間施加高電壓一面將該高分子材料固化的方法、透過電暈放電的方法、透過離子植入的方法等。在對電極間施加電壓的方法方面,駐極體係接於各電極的面分別帶電為正、負的極性,在透過電暈放電的方法方面駐極體係帶電為負的極性,在透過離子植入的方法方面一般而言駐極體係帶電為正的極性。 In the second example shown in FIG. 3B, the cleaning member 170 includes a support 131 and an electret 133 supported by the support 131. An electret is a substance that continuously forms an electric field. For example, an electret is formed by immobilizing a charge into a dielectric such as a polymer material. As for the method of implanting the electric charge into the electret, there are a method of solidifying the polymer material by applying a high voltage between the electrodes sandwiching the polymer material in a molten state, a method of transmitting a corona, and a method of transmitting ions. Implantation methods, etc. In terms of the method of applying a voltage between the electrodes, the electret system connected to each electrode is charged with positive and negative polarity, and in the method of corona discharge, the electret system is charged with negative polarity. In terms of methods, in general, the electret system is charged with positive polarity.
在第1例,係過量電荷分布於構成帶電部132的介電構材的表面,故帶電量係因環境而減少。另一方面,在第2例採用的駐極體,係電荷被植入於介電體材料中,故可半永久地保持電荷。在示於圖3B之例,係駐極體133被設於支撐體131的下表面的全區,惟亦可駐極體133被僅設於該下表面的一部分。此外,如在第1例所說明,亦可在模具的不用的物品的下表面配置駐極體。 In the first example, since the excessive charge is distributed on the surface of the dielectric structural material constituting the charging section 132, the amount of charge is reduced due to the environment. On the other hand, in the electret used in the second example, since the charges are implanted in the dielectric material, the charges can be held semi-permanently. In the example shown in FIG. 3B, the electret 133 is provided on the entire area of the lower surface of the support 131, but the electret 133 may be provided on only a part of the lower surface. In addition, as explained in the first example, an electret may be disposed on the lower surface of an unused article of the mold.
駐極體的材料方面,係可列舉例如(a)丙烯酸樹脂、尼龍、氟樹脂等的高分子材料、(b)SiO2、SiO2/SixNy積層膜等的無機膜。在氟樹脂方面,係作為可進行透過旋轉塗佈的成膜的有機駐極體膜,存在Teflon AF(註冊商標,DuPon公司製)、CYTOP(註冊商標,旭硝子股份有限公司製)等。尤其,CYTOP,係具有表面 電荷密度高的如此的特徵。 Examples of the material of the electret include (a) polymer materials such as acrylic resin, nylon, and fluororesin; (b) inorganic films such as SiO 2 and SiO 2 / Si x N y laminated films. In the case of fluororesins, Teflon AF (registered trademark, manufactured by DuPon), CYTOP (registered trademark, manufactured by Asahi Glass Co., Ltd.), and the like are organic electret films that can be formed by spin coating. In particular, CYTOP has such a feature that the surface charge density is high.
帶電部方面,亦可採用將電極以介電體覆蓋的構成者。以帶電部曝露的電極而構成,顆粒為金屬的情況下,附著於帶電部的顆粒,係由於電荷交換而成為與電極相同的極性,由於斥力而脫離,故無法透過帶電部而捕獲。所以,將電極以介電體覆蓋,使得即使為金屬顆粒仍可防止電荷交換而可透過帶電部進行捕獲。 In the charging section, a structure in which the electrode is covered with a dielectric may be used. It is composed of an electrode exposed by the charged part. When the particles are metal, the particles attached to the charged part have the same polarity as the electrode due to charge exchange, and are separated by the repulsive force, so they cannot be captured through the charged part. Therefore, the electrode is covered with a dielectric body, so that even if it is a metal particle, charge exchange can be prevented and trapped through the charged portion.
在示於圖3C的第3例,清潔構材170係包含支撐體131、被透過支撐體131而支撐的負極性帶電部134及正極性帶電部135。負極性帶電部134及正極性帶電部135方面,係可採用在第2例所說明的駐極體。透過設置帶電為負極性的負極性帶電部134與帶電為正極性的正極性帶電部135使得可不拘於顆粒的極性而將附著於周邊構材113的顆粒除去。 In the third example shown in FIG. 3C, the cleaning member 170 includes a support 131, a negatively charged portion 134 and a positively charged portion 135 supported by the support 131. As for the negative polarity charged portion 134 and the positive polarity charged portion 135, the electret described in the second example can be used. The provision of the negative-polarity charging portion 134 which is negatively charged and the positive-polarity charging portion 135 which is positive-polarity allows particles attached to the peripheral structure 113 to be removed regardless of the polarity of the particles.
一面參照圖4一面補充有關保持清潔構材170的保持部119。保持部119,係如前所述,可保持清潔構材170即可,例如可為機械臂等的可動構材,亦可為被固定的構材,模具夾具110被替代亦可。 The holding portion 119 for holding the cleaning member 170 is supplemented with reference to FIG. 4. As described above, the holding portion 119 may hold the clean structural member 170. For example, the holding member 119 may be a movable structural member such as a robot arm, or may be a fixed structural member. The mold clamp 110 may be replaced.
於一例中,保持部119,係可為保養單元136的構成要素。保養單元136,係例如可為供於進行基板夾具102的卸除、安裝用的單元。基板夾具102,係與基板101的接觸使得被汙染、或磨耗,故使用保養單元136進行交換。保養單元136,係具有供於保持基板夾具102用的保持機構,該保持機構被用作為保持部119。不會與周 邊構材113的清潔處理同時交換基板夾具102。因此,不存在透過保養單元136保持清潔構材170而進行清潔處理所致的特別的不利益。此外,透過保養單元136保持清潔構材170而進行清潔處理,係有助於壓印裝置IMP的構成的單純化。 In one example, the holding unit 119 may be a constituent element of the maintenance unit 136. The maintenance unit 136 may be, for example, a unit for removing and mounting the substrate holder 102. The substrate holder 102 is contaminated or worn due to the contact with the substrate 101, so the maintenance unit 136 is used for replacement. The maintenance unit 136 includes a holding mechanism for holding the substrate holder 102, and the holding mechanism is used as the holding portion 119. Not with the week The cleaning process of the side member 113 is performed while the substrate holder 102 is exchanged. Therefore, there is no particular disadvantage caused by the cleaning process by holding the cleaning member 170 through the maintenance unit 136. In addition, the cleaning process is performed by holding the cleaning member 170 through the maintenance unit 136, which facilitates simplification of the structure of the imprinting device IMP.
透過模具夾具110保持清潔構材170而進行清潔處理的情況下,係使用將模具100搬送至模具夾具110的搬送機構而使清潔構材170被搬送至模具夾具110。 When the cleaning member 170 is held by the mold jig 110 and the cleaning process is performed, the cleaning member 170 is transferred to the mold jig 110 using a transfer mechanism for transferring the mold 100 to the mold jig 110.
圖5係周邊構材113的俯視圖,於圖5係例示周邊構材113的形狀。在示於圖5之例,係周邊構材113的外廓為四角形,惟此僅為一例,周邊構材113係可具有各種的外廓形狀。周邊構材113,係具有將基板101之側面包圍的開口部,該開口部的形狀,係仿照基板101的外廓。 FIG. 5 is a plan view of the peripheral structure 113, and FIG. 5 illustrates the shape of the peripheral structure 113. In the example shown in FIG. 5, the outline of the peripheral structure 113 is a quadrangle, but this is only an example. The peripheral structure 113 may have various outline shapes. The peripheral member 113 has an opening portion surrounding the side surface of the substrate 101, and the shape of the opening portion is similar to the outline of the substrate 101.
周邊構材113,係具有表面平滑的連續部、表面不平滑的不連續部。於周邊構材113,係例如配置供於對模具100與壓印裝置IMP的基準之間的相對位置進行計測用的基準標示。此外,固化用的能量方面使用光的情況下,於周邊構材113係可配置供於對光的照度進行計測用的光度計。因此,在如由基準標示及光度計為代表般的構材或單元與周邊構材113之間,係可能存在溝、階差等。此外,周邊構材113由被分割的複數個構件而構成的情況下,在構件彼此之間可能存在溝、階差等。此外,亦 可能由於供於將周邊構材113緊固於微動機構114用的緊固部而形成溝、階差等。如此的溝、階差等,係表面非平滑的不連續部的一例。另一方面,平坦的上表面,係表面為平滑的連續部的一例。主控制部126,係以使清潔構材170的帶電部與每單位面積的不連續部對向的總時比使清潔構材170的帶電部與每單位面積的連續部對向的總時長的方式控制清潔處理。 The peripheral member 113 has a continuous portion with a smooth surface and a discontinuous portion with a non-smooth surface. A reference mark for measuring the relative position between the mold 100 and the reference of the imprint apparatus IMP is arranged on the peripheral member 113, for example. When light is used for energy for curing, a photometer for measuring the illuminance of light may be disposed in the peripheral structure 113. Therefore, there may be a groove, a step, and the like between the structure or unit represented by the reference mark and the photometer and the surrounding structure 113. In addition, when the peripheral member 113 is composed of a plurality of divided members, there may be a groove, a step, or the like between the members. In addition, also A groove, a step, or the like may be formed due to a fastening portion for fastening the peripheral member 113 to the micro-movement mechanism 114. Such grooves and steps are examples of discontinuities with non-smooth surfaces. On the other hand, the flat upper surface is an example where the surface is a smooth continuous portion. The main control unit 126 is such that the total time that the charged portion of the cleaning member 170 faces the discontinuous portion per unit area is longer than the total time that the charged portion of the cleaning member 170 faces the continuous portion per unit area. Way to control the cleaning process.
於壓印裝置IMP,為了對於基板101的複數個壓擊區域以壓印材形成圖案,執行以複數個壓印循環而構成的壓印程序(圖案形成方法)。各壓印循環,係可包含在基板101上透過分配器111而配置壓印材的程序、使模具100接觸於壓印材的程序、使壓印材固化的程序、將模具100從已固化的壓印材分離的程序。 In the imprint apparatus IMP, in order to form a pattern with an imprint material for a plurality of imprint areas of the substrate 101, an imprint program (pattern forming method) configured by a plurality of imprint cycles is executed. Each embossing cycle may include a procedure for arranging the embossing material on the substrate 101 through the dispenser 111, a procedure for contacting the mold 100 with the embossing material, a procedure for curing the embossing material, and separating the mold 100 from the cured embossing material. program of.
於圖5,係例示對基板101的某壓擊區域透過分配器111配置壓印材的情況下的周邊構材113、模具100、分配器111的位置關係。模具100的圖案區域(具有應轉印於基板101的圖案的區域),係位於周邊構材113上。 In FIG. 5, the positional relationship between the peripheral structure 113, the mold 100, and the distributor 111 when an imprint material is arranged through the distributor 111 to a certain pressing area of the substrate 101 is illustrated. The pattern region (the region having a pattern to be transferred to the substrate 101) of the mold 100 is located on the peripheral member 113.
執行壓印程序的期間,亦即將圖案形成於基板的複數個壓擊區域的各者的期間中,區域140係與模具100的圖案區域對向的區域。區域140,係周邊構材113之上表面的全區之中在壓印程序中容易成為對於模具100的圖案區域之顆粒的供應源的區域。因此,將清潔處理的對象限定於一部分的區域而非周邊構材113之上表面的全 區的情況下,係應對於至少包含區域140的區域執行清潔處理。 While the imprint process is being performed, that is, while a pattern is being formed on each of the plurality of pressing regions of the substrate, the region 140 is a region facing the pattern region of the mold 100. The area 140 is an area that is easily a source of supply of particles to the pattern area of the mold 100 in the entire area of the upper surface of the peripheral structure 113 during the imprinting process. Therefore, the object of the cleaning process is limited to a part of the area rather than the entire surface of the upper surface of the peripheral structure 113. In the case of an area, a cleaning process should be performed on an area including at least the area 140.
於一例中,驅動模具100的模具驅動機構MDM,係從分配器111視看時位於第1方位(X軸的負方向)。此外,區域140,係比周邊構材113之上表面之中被透過基板夾具102而保持的基板101的該第1方位之側之側面位於靠該第1方位之側的區域。 In one example, the mold driving mechanism MDM that drives the mold 100 is located in the first orientation (negative direction of the X axis) when viewed from the dispenser 111. In addition, the region 140 is a region located on the side closer to the first orientation than the side of the first orientation of the substrate 101 held by the substrate holder 102 among the upper surfaces of the peripheral members 113.
於圖6A-6D,係例示使清潔構材170的帶電部與周邊構材113的至少一部分的區域對向的狀態下使清潔構材170相對於該區域而相對移動的清潔處理。在示於圖6A之例,主控制部126,係以周邊構材113之中區域140被選擇性清潔的方式控制清潔處理。如此的清潔處理,係在為了縮短其所需的時間方面有利。在示於圖6B之例,主控制部126,係以周邊構材113的全區被清潔的方式控制清潔處理。清潔處理中的相對於周邊構材113的清潔構材170的帶電部的相對移動,係如例示於圖6A、6B,可為既定的動作單位的連續反復。該動作單位,係可包含例如往平行於第1方向(例如,X軸方向)的方向的相對移動、往與該第1方向交叉的第2方向(例如,Y軸方向)的相對移動。 In FIGS. 6A to 6D, a cleaning process in which the charged part of the cleaning member 170 and at least a part of the peripheral member 113 face each other in a state where the cleaning member 170 is relatively moved with respect to the region is illustrated. In the example shown in FIG. 6A, the main control unit 126 controls the cleaning process in such a manner that the region 140 in the peripheral structure 113 is selectively cleaned. Such a cleaning process is advantageous in order to shorten the time required for it. In the example shown in FIG. 6B, the main control unit 126 controls the cleaning process so that the entire area of the peripheral structure 113 is cleaned. The relative movement of the charged portion of the cleaning member 170 relative to the peripheral member 113 during the cleaning process is illustrated in FIGS. 6A and 6B as an example, and may be a continuous repetition of a predetermined operation unit. The operation unit may include, for example, a relative movement in a direction parallel to the first direction (for example, the X-axis direction) and a relative movement in a second direction (for example, the Y-axis direction) that intersects the first direction.
在示於圖6C之例,相對於周邊構材113的清潔構材170的帶電部的相對移動的路徑,係包含將基板保持區域1021包圍的複數個迴圈。於此,該複數個迴圈,係與基板保持區域1021的距離彼此不同。在示於圖6C之 例,係該路徑不通過基板保持區域1021,惟亦可該路徑通過基板保持區域1021。 In the example shown in FIG. 6C, the path of the relative movement of the charged portion of the cleaning member 170 relative to the peripheral member 113 includes a plurality of loops surrounding the substrate holding region 1021. Here, the plurality of loops are different from each other in distance from the substrate holding region 1021. In Figure 6C For example, the path does not pass through the substrate holding region 1021, but the path may pass through the substrate holding region 1021.
在示於圖6D之例,係周邊構材113具有溝及/或階差等的不連續部141、142、143、和其以外的連續部。顆粒,係比起連續部較容易由不連續部141、142、143而捕獲,故比起連續部於不連續部141、142、143存在較多數個顆粒。主控制部126,係以使清潔構材170的帶電部與每單位面積的不連續部141、142、143對向的總時比使清潔構材170的帶電部與每單位面積的連續部對向的總時長的方式控制清潔處理。 In the example shown in FIG. 6D, the peripheral structure 113 has discontinuous portions 141, 142, and 143 such as grooves and / or steps, and other continuous portions. The particles are easier to be captured by the discontinuous portions 141, 142, and 143 than the continuous portions, so there are more particles in the discontinuous portions 141, 142, and 143 than the continuous portions. The main control unit 126 is such that the total time ratio between the charged portion of the cleaning member 170 and the discontinuous portions 141, 142, and 143 per unit area is opposite to the charged portion of the cleaning member 170 and the continuous portion per unit area. Control the cleaning process in a total length of direction.
主控制部126,係例如就透過壓印將圖案形成於基板的壓印處理的執行發出指令後,在響應於該指令而執行壓印處理前,執行清潔處理。或者,亦可在主控制部126不製造物品的空閒時進行。或者,主控制部126,係可每次處理完所設定的個數的基板而進行清潔處理,亦可每處理完1個基板而進行清潔處理。此外,主控制部126,係亦可例如每次往壓擊區域形成完圖案而進行清潔處理。 The main control unit 126, for example, issues a command to execute an imprint process in which a pattern is formed on a substrate by imprinting, and then executes a cleaning process before executing an imprint process in response to the command. Alternatively, it may be performed when the main control unit 126 does not manufacture articles. Alternatively, the main control unit 126 may perform cleaning processing after processing a set number of substrates at a time, or may perform cleaning processing after processing one substrate at a time. In addition, the main control unit 126 may perform a cleaning process, for example, each time a pattern is formed in the pressing area.
此外,亦可進行供於確認執行清潔處理的必要性用的評價,基於該結果執行清潔處理。例如,使用評價用的模具而對1或複數個壓擊區域透過壓印形成圖案(第1樣品)從而使模具帶電後在使模具與周邊構材113對向的狀態下使周邊構材113移動。並且,使用該模具對於1或複數個壓擊區域透過壓印而形成圖案(第2樣 品)。透過比較第1樣品及第2樣品的缺陷數,使得可評價周邊構材113的狀態。 In addition, an evaluation for confirming the necessity of performing the cleaning process may be performed, and the cleaning process may be performed based on the result. For example, using a mold for evaluation, a pattern (first sample) is formed by embossing one or a plurality of pressing areas to charge the mold, and the peripheral structure 113 is moved in a state where the mold faces the peripheral structure 113. . Then, a pattern is formed by embossing one or a plurality of pressing areas using this mold (second sample) 品). By comparing the number of defects of the first sample and the second sample, the state of the peripheral structure 113 can be evaluated.
於圖7,係例示周邊構材113的清潔程序。此清潔程序,係被透過主控制部126而控制。在程序S201,主控制部126,係命令未圖示的搬送機構,使保持部119保持清潔構材170。在程序S202,主控制部126,係判別清潔構材170的種類。清潔構材170的種類,係例如透過賦予清潔構材170的識別符而判別。或者,清潔構材170的種類,係利用對表面電位進行計測的計測器而對清潔構材170的帶電部的帶電量進行計測,基於該結果而判別。 In FIG. 7, a cleaning process of the peripheral structure 113 is illustrated. This cleaning procedure is controlled by the main control unit 126. In step S201, the main control unit 126 instructs a transport mechanism (not shown) to hold the holding unit 119 to the cleaning member 170. In step S202, the main control unit 126 determines the type of the cleaning member 170. The type of the cleaning member 170 is determined by, for example, an identifier given to the cleaning member 170. Alternatively, the type of the cleaning member 170 is determined based on the result of measuring the charge amount of the charged portion of the cleaning member 170 using a measuring device that measures the surface potential.
將如例示於圖3A般通過相對於壓印材的介電構材的接觸及分離而予以帶電的類型稱為非持續型。此外,將如例示於圖3B、3C般使用駐極體的類型稱為持續型。於程序S202,被判斷清潔構材170為非持續型的情況下係進至程序S203,被判斷清潔構材170為持續型的情況下係進至程序S206。 As shown in FIG. 3A, a type charged by contact and separation of a dielectric structure with respect to an imprint material is referred to as a non-persistent type. The type using an electret as illustrated in FIGS. 3B and 3C is referred to as a continuous type. In step S202, when it is judged that the cleaning member 170 is non-continuous, it proceeds to step S203, and when it is judged that the cleaning member 170 is continuous, it proceeds to step S206.
在程序S203,主控制部126,係命令未圖示的搬送機構,將虛設基板予以搬送至基板夾具102上。在程序S204,主控制部126,係以壓印材被配置於虛設基板上的方式控制基板驅動機構SDM及分配器111。在程序S205,主控制部126,係控制虛擬壓印,該虛擬壓印係使清潔構材170的介電構材與虛設基板上的壓印材接觸,透過固化部104使壓印材固化,將介電構材從已固化的壓印 材分離。透過此虛擬壓印使得介電構材帶電從而準備帶電部。持續型的清潔構材170方面,係不需要如程序S203~S205的供帶電用的處理。 In step S203, the main control unit 126 instructs a transfer mechanism (not shown) to transfer the dummy substrate to the substrate holder 102. In program S204, the main control unit 126 controls the substrate driving mechanism SDM and the distributor 111 so that the imprint material is arranged on the dummy substrate. In program S205, the main control unit 126 controls the virtual imprint. The virtual imprint contacts the dielectric structural material of the cleaning structure 170 with the imprint material on the dummy substrate, and solidifies the imprint material through the curing unit 104. Electrical materials from cured embossing 材 离。 Material separation. Through this virtual imprint, the dielectric structural material is charged to prepare a charged portion. In the case of the continuous cleaning member 170, the processes for supplying electricity such as the procedures S203 to S205 are not required.
在程序S206,主控制部126,係執行周邊構材113的清潔處理。具體而言,主控制部126,係使清潔構材170的帶電部與周邊構材113的至少一部分的區域對向的狀態下使清潔構材170相對於該區域而相對移動(掃描)。藉此,該區域的顆粒150從該區域脫離而吸附於該帶電部,使得該區域被清潔。 In step S206, the main control unit 126 executes cleaning processing of the peripheral structure 113. Specifically, the main control unit 126 moves (scans) the cleaning member 170 relative to the area in a state where the charged portion of the cleaning member 170 and at least a part of the peripheral member 113 face each other. Thereby, the particles 150 in the region are detached from the region and adsorbed on the charged portion, so that the region is cleaned.
在程序S207,主控制部126,係命令未圖示的搬送機構,將清潔構材170予以搬出。於此,設置保持清潔構材170的專用的保持部119的情況下,係不需要程序S201、S207,維持清潔構材170被透過保持部119而保持的狀態。 In step S207, the main control unit 126 instructs a transport mechanism (not shown) to carry out the cleaning member 170. Here, when a dedicated holding portion 119 for holding the cleaning member 170 is provided, procedures S201 and S207 are not necessary, and the state in which the cleaning member 170 is held by the holding portion 119 is maintained.
上述的清潔處理,係如例示於圖8,亦可應用於供於將顆粒從基板夾具102(基板保持區域1021)除去用的清潔處理。基板夾具102的基板保持區域1021,係具有供於支撐基板101用的銷及/或環。顆粒附著於銷及/或環之上時,基板101變形,可能在所形成的圖案產生缺陷。 The above-mentioned cleaning process is illustrated in FIG. 8 as an example, and can also be applied to a cleaning process for removing particles from the substrate holder 102 (substrate holding area 1021). The substrate holding region 1021 of the substrate holder 102 includes a pin and / or a ring for supporting the substrate 101. When particles adhere to the pins and / or rings, the substrate 101 is deformed, and defects may be generated in the formed pattern.
所以,主控制部126,係可被構成為控制基板夾具102(基板保持區域1021)的清潔處理。在此清潔處理,係在使清潔構材170的帶電部與基板夾具102對向的狀態下使清潔構材170相對於基板夾具102相對移動而使 得基板夾具102的顆粒150被吸附於該帶電部。 Therefore, the main control unit 126 may be configured to control the cleaning process of the substrate holder 102 (the substrate holding area 1021). In this cleaning process, the cleaning member 170 is relatively moved with respect to the substrate holder 102 in a state where the charged portion of the cleaning member 170 faces the substrate holder 102. The particles 150 of the substrate holder 102 are attracted to the charged portion.
於圖9,係例示基板夾具102的清潔程序。此清潔程序,係被透過主控制部126而控制。在程序S211,在基板夾具102上具有基板101的情況下,主控制部126,係命令未圖示的搬送機構,將基板101予以搬出。在程序S212,主控制部126,係命令未圖示的搬送機構,使保持部119保持清潔構材170。在程序S213,主控制部126,係判別清潔構材170的種類。於程序S213,被判斷清潔構材170為非持續型的情況下係進至程序S214,被判斷清潔構材170為持續型的情況下係進至程序S218。 FIG. 9 illustrates a cleaning procedure of the substrate holder 102. This cleaning procedure is controlled by the main control unit 126. In the step S211, when the substrate 101 is provided on the substrate holder 102, the main control unit 126 instructs a transfer mechanism (not shown) to carry out the substrate 101. In step S212, the main control unit 126 instructs a conveyance mechanism (not shown) to hold the holding unit 119 to the cleaning member 170. In step S213, the main control unit 126 determines the type of the cleaning member 170. In step S213, when it is determined that the cleaning member 170 is non-continuous, the routine proceeds to step S214, and when it is determined that the cleaning member 170 is continuous, the routine proceeds to step S218.
在程序S214,主控制部126,係命令未圖示的搬送機構,將虛設基板予以搬送至基板夾具102上。在程序S215,主控制部126,係以壓印材被配置於虛設基板上的方式控制基板驅動機構SDM及分配器111。在程序S216,主控制部126,係控制虛擬壓印,該虛擬壓印係使清潔構材170的介電構材與虛設基板上的壓印材接觸,透過固化部104使壓印材固化,將介電構材從已固化的壓印材分離。透過此虛擬壓印使得介電構材帶電從而準備帶電部。程序S217,主控制部126,係命令未圖示的搬送機構,將虛設基板從基板夾具102予以搬出。持續型的清潔構材170方面,係不需要如程序S214~S217的供帶電用的處理。 In step S214, the main control unit 126 instructs a transfer mechanism (not shown) to transfer the dummy substrate to the substrate holder 102. In program S215, the main control unit 126 controls the substrate driving mechanism SDM and the distributor 111 so that the imprint material is arranged on the dummy substrate. In program S216, the main control unit 126 controls the virtual imprint. The virtual imprint contacts the dielectric structural material of the cleaning structure 170 with the imprint material on the dummy substrate, and cures the imprint material through the curing unit 104. The electrical component is separated from the cured embossed material. Through this virtual imprint, the dielectric structural material is charged to prepare a charged portion. In step S217, the main control unit 126 instructs a transfer mechanism (not shown) to carry out the dummy substrate from the substrate holder 102. In the case of the continuous cleaning member 170, the processes for supplying electricity such as the procedures S214 to S217 are not required.
在程序S218,主控制部126,係執行基板夾 具102的清潔處理。具體而言,主控制部126,係使清潔構材170的帶電部與基板夾具102的至少一部分的區域對向的狀態下使清潔構材170相對於基板夾具102而相對移動(掃描)。藉此,由於基板夾具102的該區域的顆粒150從基板夾具102脫離而吸附於該帶電部,使得基板夾具102的該區域被清潔。 In program S218, the main control unit 126 executes the substrate clamping Cleaning tool 102. Specifically, the main control unit 126 moves (scans) the cleaning member 170 relative to the substrate holder 102 in a state where the charged portion of the cleaning member 170 faces at least a part of the region of the substrate holder 102. Thereby, the particles 150 in this area of the substrate holder 102 are detached from the substrate holder 102 and adsorbed to the charged portion, so that the area of the substrate holder 102 is cleaned.
在程序S219,主控制部126,係命令未圖示的搬送機構,將清潔構材170予以搬出。於此,設置保持清潔構材170的專用的保持部119的情況下,係不需要程序S212、S219,維持清潔構材170被透過保持部119而保持的狀態。 In step S219, the main control unit 126 instructs a transport mechanism (not shown) to carry out the cleaning member 170. Here, when a dedicated holding portion 119 for holding the cleaning member 170 is provided, procedures S212 and S219 are not required, and the state in which the cleaning member 170 is held by the holding portion 119 is maintained.
主控制部126,係例如FPGA(Field Programmable Gate Array之縮寫)等的PLD(Programmable Logic Device之縮寫)、或ASIC(Application Specific Integrated Circuit之縮寫)、或併入程式的通用電腦、或將此等全部或一部分的組合從而構成。其他控制部120~125亦相同,FPGA等的PLD、或ASIC、或併入程式的通用電腦、或將此等全部或一部分的組合從而構成。 The main control unit 126 is, for example, a PLD (abbreviation of Programmable Logic Device) such as FPGA (abbreviation of Field Programmable Gate Array), or an ASIC (abbreviation of Application Specific Integrated Circuit), a general-purpose computer incorporated in a program, or the like All or part of them are combined. The same applies to the other control units 120 to 125, and includes a PLD such as an FPGA, an ASIC, a general-purpose computer incorporating a program, or a combination of all or a part of these.
以下,說明有關物品製造方法。在此,係作為一例,說明製造裝置(半導體積體電路元件、液晶顯示元件等)作為物品的物品製造方法。物品製造方法,係包含利用上述的壓印裝置而在基板(晶圓、玻璃板、膜狀基板)形成圖案的程序。再者,該製造方法,係可包含處理(例如,蝕刻)形成圖案的基板的程序。另外,製造規則 化媒體(patterned media)(記錄媒體)、光學元件等的其他物品的情況下,該製造方法係可代替蝕刻包含對形成圖案的基板進行加工的其他處理。本實施形態的物品製造方法,係比起歷來的方法,於物品的性能/品質/生產性/生產成本中的至少一者方面有利。 Hereinafter, a method for manufacturing the article will be described. Here, as an example, an article manufacturing method using a manufacturing apparatus (semiconductor integrated circuit element, liquid crystal display element, etc.) as an article will be described. The article manufacturing method includes a process of forming a pattern on a substrate (wafer, glass plate, film substrate) using the above-mentioned imprint apparatus. The manufacturing method may include a process of processing (for example, etching) a patterned substrate. In addition, manufacturing rules In the case of other items such as patterned media (recording media) and optical elements, this manufacturing method can be used instead of etching and other processes including processing a patterned substrate. The article manufacturing method of this embodiment is more advantageous than conventional methods in at least one of performance, quality, productivity, and production cost of the article.
上述的清潔處理,係(a)執行壓印處理前、或(b)壓印裝置為空閒狀態時、或(c)設定個數的基板的處理後進行。在以下,係說明:將帶電部配置於壓印裝置IMP的特定位置,使得可不特別設定供於清潔處理用的時間,而與一連串的壓印動作並行而實施清潔處理之例。 The above-mentioned cleaning process is performed before (a) the imprint process is performed, or (b) when the imprint apparatus is in an idle state, or (c) after a set number of substrates are processed. The following is an example of arranging the charging section at a specific position of the imprint apparatus IMP so that the cleaning process can be performed in parallel with a series of imprinting operations without setting a time for the cleaning process.
於圖10,係例示本發明的第2實施形態的壓印裝置IMP的構成。清潔構材170,係被以模具100位於清潔構材170與分配器111之間的方式而配置。清潔構材170,係例如被透過被配置於模具夾具110的周邊的周邊構材151而保持。如例示於圖11,清潔構材170係具有帶電部171。 FIG. 10 illustrates a configuration of an imprint apparatus IMP according to a second embodiment of the present invention. The cleaning member 170 is arranged so that the mold 100 is located between the cleaning member 170 and the dispenser 111. The cleaning member 170 is, for example, held by a peripheral member 151 disposed around the periphery of the mold jig 110. As shown in FIG. 11 for example, the cleaning member 170 has a charging portion 171.
在第2實施形態,係以模具100位於清潔構材170與分配器111之間的方式配置清潔構材170。藉此,使壓印對象的壓擊區域移動至分配器111之下,之後予以移動至模具100之下的程序中,示於圖5的區域140的一部分與清潔構材170對向而被清潔。對於複數個壓擊區域依序執行如此的程序使得區域140的全區被透過清潔 構材170而清潔。因此,周邊構材113的清潔所需的時間被削減。此係有助於透過壓印的圖案形成方面的處理量的提升。 In the second embodiment, the cleaning member 170 is disposed so that the mold 100 is located between the cleaning member 170 and the dispenser 111. Thereby, in the process of moving the pressing area of the imprinting object under the dispenser 111 and then moving it under the mold 100, a part of the area 140 shown in FIG. 5 faces the cleaning member 170 and is cleaned. . Such procedures are sequentially performed for a plurality of pressing areas, so that the entire area of area 140 is cleaned through. The member 170 is cleaned. Therefore, the time required for cleaning the peripheral member 113 is reduced. This system contributes to an increase in the throughput of pattern formation through imprinting.
於此,就清潔的效率化的觀點而言,優選上,與清潔構材170、模具100及分配器111排列的方向正交的方向上的帶電部171的寬度L2,係比模具100的圖案部160的寬度L1大。 Here, from the viewpoint of efficiency of cleaning, it is preferable that the width L2 of the charged portion 171 in a direction orthogonal to the direction in which the cleaning member 170, the mold 100, and the dispenser 111 are aligned is more than the pattern of the mold 100 The width L1 of the portion 160 is large.
於圖12,係例示性示出第2實施形態的壓印裝置IMP的動作。於此,清潔構材170的帶電部171,係進行供帶電用的操作從而成為帶電狀態,進行供除電用的操作從而成為非帶電狀態。然而,可使用不需要如此的動作的帶電部171,於該情況下係不需要在以下說明的程序S201、S205。單純的例方面,係可將帶電部171以導電體構成,對帶電部171供應電荷從而設為帶電狀態,從帶電部171抽出電荷從而設為非帶電狀態。 FIG. 12 exemplarily shows the operation of the imprint apparatus IMP of the second embodiment. Here, the charging portion 171 of the cleaning member 170 is charged to a charged state, and is charged to a non-charged state. However, the charging section 171 that does not require such an operation may be used. In this case, the procedures S201 and S205 described below are unnecessary. In a simple example, the charging portion 171 may be configured by a conductive body, and the charge may be supplied to the charging portion 171 to be in a charged state, and the charge may be drawn from the charging portion 171 to be in a non-charged state.
首先,在程序S221,主控制部126,係使帶電部171為帶電狀態。接著,在程序S222,主控制部126,係以壓印材被配置於壓印對象的壓擊區域的方式,控制分配器111及基板驅動機構SDM。在此時,壓印對象的壓擊區域被配置於分配器111之下。接著,在程序S223,主控制部126,係以壓印對象的壓擊區域被配置於模具100之下的方式控制基板驅動機構SDM。於程序S222、S223,周邊構材113的表面之中與清潔構材170的帶電部171對向的區域被清潔。 First, in step S221, the main control unit 126 causes the charging unit 171 to be charged. Next, in step S222, the main control unit 126 controls the dispenser 111 and the substrate driving mechanism SDM so that the imprint material is disposed in the imprint area of the imprint target. At this time, the impact area of the imprint target is arranged below the dispenser 111. Next, in step S223, the main control unit 126 controls the substrate driving mechanism SDM so that the impact area to be imprinted is disposed under the mold 100. In the procedures S222 and S223, an area of the surface of the peripheral structure 113 facing the charging portion 171 of the cleaning structure 170 is cleaned.
接著,在程序S224,主控制部126,係首先以壓印對象的壓擊區域上的壓印材與模具100接觸的方式控制模具驅動機構MDM。在程序S024,接著,主控制部126,係以使壓印材固化的方式控制固化部104,之後以使已固化的壓印材與模具100分離的方式控制模具驅動機構MDM。接著,在程序S225,主控制部126,係使帶電部171為非帶電狀態。 Next, in step S224, the main control unit 126 first controls the mold driving mechanism MDM so that the imprint material on the imprinting area of the imprint target contacts the mold 100. In program S024, the main control unit 126 then controls the curing unit 104 to cure the imprint material, and then controls the mold drive mechanism MDM to separate the cured imprint material from the mold 100. Next, in routine S225, the main control unit 126 sets the charging unit 171 to a non-charged state.
接著,在程序S226,主控制部126,係判斷對於基板的全壓擊區域的壓印是否完畢,存在尚未進行壓印的壓擊區域時,返回程序S221,就其他壓擊區域反復處理。另一方面,對於全壓擊區域的壓印結束的情況下,於程序S227,主控制部126,係判斷對於全基板的壓印是否完畢。並且,存在尚未進行壓印的壓擊區域時,主控制部126係返回程序S201,就其他基板反復處理。 Next, in step S226, the main control unit 126 determines whether or not the imprinting of the entire imprinting area of the substrate is completed. When there is an imprinting area that has not yet been imprinted, it returns to the routine S221 and repeats the processing for other imprinting areas. On the other hand, when the imprinting of the full-impact area is completed, in step S227, the main control unit 126 determines whether the imprinting of the entire substrate is completed. In addition, when there is an impact area that has not been embossed, the main control unit 126 returns to the routine S201 and repeats processing on other substrates.
要透過清潔構材170清潔周邊構材113的較廣的區域,係如例示於圖13,具有較廣的面積的清潔構材170的採用有益。例示於圖13的清潔構材170,係具有將模具100在其全方位整個包圍的形狀。 To clean a wider area of the surrounding structure 113 through the cleaning structure 170, as shown in FIG. 13, the use of the cleaning structure 170 having a wide area is beneficial. The cleaning member 170 illustrated in FIG. 13 has a shape that completely surrounds the mold 100 in all directions.
然而,在模具100的周圍,係配置各種的機構。此情況下,如將模具100在全方位整個包圍般的清潔構材170的採用恐為困難。可在模具100的周圍配置的機構方面,係可列舉例如對模具100之側面施力從而使模具100變形的機構、調整模具100的傾斜的機構、構成模具驅動機構MDM的一部分的機構等。 However, various mechanisms are arranged around the mold 100. In this case, it may be difficult to adopt the cleaning member 170 that surrounds the mold 100 in all directions. Examples of the mechanism that can be arranged around the mold 100 include a mechanism that deforms the mold 100 by applying force to the side surface of the mold 100, a mechanism that adjusts the tilt of the mold 100, and a mechanism that forms part of the mold drive mechanism MDM.
於圖14,係示出除了清潔構材170以外設置追加的清潔構材180、181之例。亦即,於圖14,係示出設置複數個清潔構材170、180、181之例。如例示於圖15A,清潔構材180係清潔周邊構材113之中的一部分的區域300,如例示於圖15B,清潔構材181係清潔周邊構材113之中的其他區域310。如此般設置複數個清潔構材,從而分擔透過該複數個清潔構材而清潔的區域使得可抑制壓印裝置IMP的大型化。於此,清潔構材170,係為了與對於基板101的複數個壓擊區域的壓印並行而清潔周圍構材113而使用。另一方面,清潔構材180、181,係在不進行往基板101的壓印的期間,例如在保養時、空閒時等執行的專用的清潔程序中使用。 FIG. 14 shows an example in which additional cleaning members 180 and 181 are provided in addition to the cleaning member 170. That is, FIG. 14 shows an example in which a plurality of cleaning members 170, 180, and 181 are provided. As shown in FIG. 15A, the cleaning member 180 is a part of the area 300 among the surrounding members 113, and as shown in FIG. 15B, the cleaning member 181 is the other area 310 among the surrounding members 113. By providing a plurality of cleaning members in this manner, sharing the area to be cleaned by the plurality of cleaning members makes it possible to suppress the enlargement of the imprint apparatus IMP. Here, the cleaning member 170 is used to clean the surrounding members 113 in parallel with the imprint of the plurality of pressing regions on the substrate 101. On the other hand, the cleaning members 180 and 181 are used during a period when the substrate 101 is not embossed, for example, during a dedicated cleaning procedure performed during maintenance, idle time, or the like.
壓印裝置IMP,係優選上具備對於在將模具100從已固化的壓印材分離時帶電的模具100進行除電的除電機構。例如,利用離子產生器而進行模具100的除電。在離子產生器方面,係存在電暈放電方式、能量線照射方式(例如,X線照射方式、α線照射方式等)等的多樣的種類。電暈放電方式,係一般而言,有可能成為顆粒的產生因素。因此,要一面維持清淨度一面將模具100除電,係X線照射方式或α線照射方式為適。模具100與基板101之間的空間係非常窄的空間,故難以在該空間的周圍配置離子產生器,對於模具100直接照射X線或α線。對於模 具100直接照射X線或α線的方式以外,存在如下方式:將X線或α線照射於氣體而使氣體離子化,將離子化的氣體供應至模具100之下的空間。但是,被離子化的氣體,係離子濃度在通過管路及噴嘴的期間,另外在通過從該噴嘴至模具100與基板101之間的空間的路徑的期間降低,故有時無法在模具100之下的空間中維持充分的離子濃度。於此情況下,係變得無法將模具100有效地除電。 It is preferable that the imprint apparatus IMP is provided with a static elimination mechanism that removes electricity from the mold 100 that is charged when the mold 100 is separated from the solidified imprint material. For example, static elimination of the mold 100 is performed using an ion generator. In the ion generator, there are various types such as a corona discharge method, an energy ray irradiation method (for example, an X-ray irradiation method, an α-ray irradiation method, and the like). The corona discharge method is, in general, likely to be a factor in the generation of particles. Therefore, to maintain the cleanliness while removing the power from the mold 100, an X-ray irradiation method or an α-ray irradiation method is appropriate. The space between the mold 100 and the substrate 101 is a very narrow space. Therefore, it is difficult to arrange an ion generator around the space, and the mold 100 is directly irradiated with X-rays or α-rays. For modules In addition to the method of directly irradiating X-rays or α-rays with the tool 100, there are methods for irradiating X-rays or α-rays to a gas to ionize the gas, and supplying the ionized gas to a space below the mold 100. However, the ionized gas has a reduced ion concentration while passing through a pipe and a nozzle, and during a path passing from the nozzle to the space between the mold 100 and the substrate 101, so it may not be able to pass through the mold 100. Sufficient ion concentration is maintained in the space below. In this case, it becomes impossible to effectively remove the power of the mold 100.
所以,在本實施形態,係從淨化氣體供應部118供應除電用氣體。除電用氣體,係亦可從與淨化氣體供應部118係個別的氣體供應部而供應。如示於圖16A,除電用氣體,係優選上在將模具100的圖案部160從已固化的壓印材分離前,事先予以充滿於模具100的周圍的空間。透過淨化氣體供應部118的除電用氣體的供應,係只要模具100的周圍的空間被以除電用氣體而充分填滿,則可在分離圖案部160前停止,亦可在分離中持續供應。其結果,如示於圖16B,在從已固化的壓印材將圖案部160分離的程序中周圍的除電用氣體被引入至圖案部160與基板101之間隙而置換。 Therefore, in this embodiment, the gas for removing electricity is supplied from the purge gas supply unit 118. The gas for removing electricity may be supplied from a separate gas supply section from the purge gas supply section 118. As shown in FIG. 16A, it is preferable that the space around the mold 100 is filled in advance before the pattern portion 160 of the mold 100 is separated from the solidified imprint material. The supply of the static electricity gas through the purge gas supply unit 118 may be stopped before the separation pattern portion 160 as long as the space around the mold 100 is sufficiently filled with the static electricity gas, or the supply may be continued during separation. As a result, as shown in FIG. 16B, in the process of separating the pattern portion 160 from the cured imprint material, the surrounding static elimination gas is introduced into the gap between the pattern portion 160 and the substrate 101 and replaced.
除電用氣體,係需要包含相對於電子的平均自由徑比空氣長的氣體。除電用氣體方面,係具體而言,優選上為屬單原子分子的稀有氣體,特優選上為稀有氣體之中具有最長的平均自由徑的氦。存在於電場中的電子,係被透過電場而搬運至陽極側,在其中途衝撞於氣體分子。此情況下,電子被充分加速而在具有氣體的電離能以 上的能量的狀態下衝撞於氣體分子時引起電離,生成電子-陽離子對。所生成的電子亦被以電場而加速,使氣體分子電離。如此,將陸續引起電離使得生成大量的電子-陽離子對的現象稱為電子雪崩。相對於電子的平均自由徑長的氣體方面,係加速中的電子在中途未衝撞於氣體分子,被加速至高能狀態。因此,相對於電子的平均自由徑長的氣體,係比起空氣,在低的電場中仍容易引起電子雪崩,可在大的電壓累積於模具100前進行除電。 The gas for static elimination needs to include a gas having an average free diameter with respect to electrons longer than that of air. As for the gas for static elimination, specifically, a rare gas which is a monoatomic molecule is preferable, and helium which has the longest average free diameter among rare gas is especially preferable. The electrons existing in the electric field are transported to the anode side through the electric field, and collide with gas molecules in the middle. In this case, the electrons are sufficiently accelerated and the When it collides with gas molecules in the state of energy above, it causes ionization and generates electron-cation pairs. The generated electrons are also accelerated by an electric field, which ionizes gas molecules. In this way, the phenomenon of successively causing ionization to generate a large number of electron-cation pairs is called an electron avalanche. With respect to a gas having an average free path length relative to the electrons, the accelerating electrons did not collide with the gas molecules in the middle, and were accelerated to a high-energy state. Therefore, a gas with a long average free path relative to electrons is more likely to cause avalanche of electrons in a low electric field than air, and can be neutralized before a large voltage is accumulated in the mold 100.
此外,除電用氣體,係一般而言擴散性高,故使壓印材填充於圖案部160時,亦可用作為壓印空間的淨化氣體。於此,論述有關透過清潔構材170的帶電部171在周邊構材113之間予以產生電場,進行周邊構材113上的清潔處理的情況下的帶電部171的電壓。除電用氣體進入於施加電壓的帶電部171與周邊構材113之間隙,引起電子雪崩時,大量的電子或陽離子被供應至帶電部171的表面使得帶電部171的電壓降低,清潔效果減少。因此,帶電部171的電壓,係需要設定為在帶電部171與周邊構材113之間產生的電場強度成為通過除電用氣體而引起放電的電場強度以下。所以,可設置控制施加於帶電部171的電壓的電壓控制部172。電壓控制部172,係將施加於帶電部171的電壓,設定為在帶電部171與周邊構材113之間產生的電場強度成為通過除電用氣體而引起放電的電場強度以下。在帶電部171與周邊構材113之間是否引起電子雪崩,係依存於電場強度與除電 用氣體的種類,故依帶電部171與周邊構材113之間的距離和除電用氣體的種類,而決定施加於帶電部171的電壓的值即可。亦即,施加於帶電部171的電壓的值,係因除電用氣體的種類、帶電部171與周邊構材113之間的距離等而異。 In addition, since the gas for static elimination is generally highly diffusive, when the imprint material is filled in the pattern portion 160, it can also be used as a purge gas for the imprint space. Here, the voltage of the charging portion 171 in a case where an electric field is generated between the surrounding members 113 through the charged portion 171 of the cleaning member 170 and the surrounding member 113 is cleaned is discussed. When the gas for static elimination enters the gap between the charged portion 171 and the surrounding structure 113 to which a voltage is applied, and when an avalanche of electrons is caused, a large amount of electrons or cations are supplied to the surface of the charged portion 171 so that the voltage of the charged portion 171 is reduced and the cleaning effect is reduced. Therefore, the voltage of the charging section 171 needs to be set so that the electric field strength generated between the charging section 171 and the surrounding structure 113 is equal to or lower than the electric field strength caused by the discharge gas. Therefore, a voltage control section 172 that controls the voltage applied to the charging section 171 may be provided. The voltage control unit 172 sets the voltage applied to the charging unit 171 so that the electric field strength generated between the charging unit 171 and the surrounding structure 113 is equal to or lower than the electric field strength caused by the discharge of the static elimination gas. Whether or not an electron avalanche is caused between the charged part 171 and the surrounding structure 113 depends on the electric field strength and static elimination. Since the type of gas is used, the value of the voltage to be applied to the charging section 171 may be determined depending on the distance between the charging section 171 and the surrounding structure 113 and the type of the static elimination gas. That is, the value of the voltage applied to the charging section 171 varies depending on the type of the static elimination gas, the distance between the charging section 171 and the peripheral member 113, and the like.
透過除電用氣體,使得模具100的電壓,係從已固化的壓印材分離的程序後,被維持為通過除電用氣體而引起放電的電壓以下。因此,以將帶電部171設定為上述的電壓的清潔構材170進行周邊構材113的清潔處理,使得可防止對於模具100的顆粒150的附著。 The voltage of the mold 100 is passed through the process of separating the solidified embossed material through the process of passing the gas for static elimination, and the voltage of the mold 100 is maintained below the voltage caused by the discharge of the gas for static elimination. Therefore, the cleaning processing of the peripheral structure 113 is performed with the cleaning structure 170 having the charged portion 171 set to the above-mentioned voltage, so that the adhesion of the particles 150 to the mold 100 can be prevented.
此外,不從淨化氣體供應部118供應除電用氣體的期間,施加於帶電部171的電壓,係亦可被設定為在帶電部171與周邊構材113之間發生的電場強度比通過除電用氣體而引起放電的電場強度高的值。例如,未進行壓印程序的期間,係亦可對於帶電部171設定比壓印程序中高的電壓,進行清潔處理。於壓印程序中,亦在未供應除電用氣體的期間,係亦可提高帶電部171的電壓而使清潔效果提升。 In addition, the voltage applied to the charging section 171 while the static elimination gas is not being supplied from the purge gas supply section 118 may be set such that the electric field intensity ratio generated between the charging section 171 and the surrounding structure 113 passes the static elimination gas. On the other hand, the electric field intensity causing the discharge is high. For example, during the period when the imprinting process is not performed, a higher voltage may be set to the charging section 171 than in the imprinting process to perform a cleaning process. In the embossing process, even when the gas for removing electricity is not supplied, the voltage of the charging section 171 can be increased to improve the cleaning effect.
本發明非限定於上述實施形態者,不脫離本發明的精神及範圍之下,可進行各式的變更及變化。因此,為了公開本發明的範圍,附上以下的請求項。 The present invention is not limited to those described above, and various changes and modifications can be made without departing from the spirit and scope of the present invention. Therefore, in order to disclose the scope of the present invention, the following claims are attached.
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