KR20170141734A - Imprint apparatus, imprint method, and article manufacturing method - Google Patents

Abstract

An imprint apparatus 100 for forming a pattern of an imprint material on a substrate 4 using a mold 9 is characterized in that the trapping region is arranged to capture a particle by electrostatic force so as to surround the holding space for the substrate or the arrangement space for the substrate And an area 31b.

Description

Imprint apparatus, imprint method, and article manufacturing method

The present invention relates to an imprint apparatus, an imprint method, and a method of manufacturing an article.

A known imprint apparatus forms a fine pattern on a substrate (wafer) for manufacturing a semiconductor device or the like. The imprint apparatus forms a pattern of a cured product by contacting an imprint material on a substrate with a mold having a pattern formed portion (hereinafter referred to as a pattern portion) and applying curing energy to the imprint material.

When the mold is separated from the imprint material, the mold is charged (hereinafter referred to as "separated charge"). The pattern portion of the mold tends to trap charged particles around the mold. If the patterned portion of the mold with the captured particles contacts the imprinting material, the pattern formed on the substrate will have defects.

PTL 1 describes a technique of charging a part of a mold holding mechanism of a mold or a mold so that a part of the mold holding mechanism serves as a particle trapping area to prevent the pattern of the mold from trapping particles in the atmosphere. PTL 1 describes that the particle trapping region is disposed upstream of the position (imprint position) where the substrate faces the mold in the transport direction in which the substrate is transported to the imprint position.

However, the particles can be floated in all directions with respect to the pattern portion. In the particle trapping region disclosed in PTL 1, the pattern portion can capture particles approaching the pattern portion in a direction other than the transport direction (the direction from the upstream side to the downstream side in the transport direction).

[PTL 1]: Japanese Patent Laid-Open Publication No. 2014-175340

One aspect of the present invention provides an imprint apparatus and an imprint method which reduce the possibility of particles getting caught between a mold and a substrate when the mold contacts the imprint material on the substrate.

According to one aspect of the present invention, an imprint apparatus for forming a pattern of an imprint material on a substrate using a mold has a trapping region for trapping particles by electrostatic force, and a trapping region for trapping a trapping unit .

Further features of the present invention will become apparent from the following description of exemplary embodiments with reference to the accompanying drawings.

1 is a view showing an imprint apparatus according to the first embodiment.
2A is a plan view of a charging plate surrounding a mold.
2B is a plan view of the charging plate surrounding the mold.
2C is a plan view of the charging plate surrounding the mold.
3A is a plan view of a charge plate surrounding the wafer.
3B is a plan view of the charge plate surrounding the wafer.
3C is a plan view of the charging plate surrounding the wafer.
4A is a view for explaining the first advantage of the first embodiment.
4B is a view for explaining the first advantage of the first embodiment.
5A is a view for explaining the second advantage of the first embodiment.
5B is a view for explaining the second advantage of the first embodiment.
6 is a view showing an imprint apparatus according to the second embodiment.
7A is a view showing an imprint apparatus according to the fourth embodiment.
7B is a view showing an imprint apparatus according to the fourth embodiment.
8 is a flowchart of voltage control in the fourth embodiment.
9 is a timing chart of voltage control in the fourth embodiment.
10A is a schematic view of an imprint apparatus according to the fifth embodiment.
10B is a schematic view of the imprint apparatus according to the fifth embodiment.
11 is a view showing an imprint apparatus according to the seventh embodiment.
12A is a plan view showing a charging plate surrounding the wafer in the eighth embodiment.
12B is a cross-sectional view showing a charge plate surrounding the wafer in the eighth embodiment.
13 is a plan view showing a charge plate surrounding a wafer in a modification of the eighth embodiment.
14 is a plan view showing a charging plate surrounding the mold in the eighth embodiment.

1 shows an imprint apparatus 100 according to a first embodiment. The imprint apparatus 100 contacts the mold 9 with the imprint material 4a on the wafer 4 to harden the imprint material 4a in contact with the mold 9, 9 is separated from the cured imprint material 4a to form a pattern of the imprint material 4a on the wafer 4. [ As used herein, the term "Z-axis or direction" refers to a vertical axis or direction, and "X-axis or direction" and "Y-axis or direction" refer to two axes or directions perpendicular to each other in a plane perpendicular to the Z- Quot; Examples of the imprint material 4a used include photocurable compositions.

The imprint apparatus 100 includes a base face plate 2, a stage face plate 3 on the base face plate 2, a chuck 5 for holding the wafer 4, And a stage 6 for moving the chuck 5 together with the chuck 5. The imprint apparatus 100 further includes a support 7 disposed on the base face plate 2, a mold retention mechanism 10 (hereinafter referred to as a retention mechanism), and a bridge face plate 8 . The bridge face plate 8 is supported by the struts 7 and supports the holding mechanism 10.

The holding mechanism 10 holds the mold 9 by a mold chuck (not shown). The holding mechanism 10 includes a mold driving mechanism (not shown) capable of positioning the mold 9 at least in the Z direction. The mold driving mechanism can position the mold 9 in the other directions (e.g., six-axis directions including the X-, Y-, and X-, Y-, and Z-axis rotation directions) .

The chuck 5 holds the wafer 4 by reducing the pressure of the space between the wafer 4 and the chuck 5. The stage 6 includes an upper plate (not shown) for mounting the chuck 5 and a stage driving mechanism (not shown) for driving the upper plate. The stage driving mechanism includes a linear motor and an air cylinder, and uses the linear motor and the air cylinder to position the wafer 4 at least in the X and Y directions. The stage driving mechanism can position the wafer 4 in two or more axial directions (e.g., six axial directions). The position of the stage 6 is measured using, for example, a laser interferometer.

The imprint apparatus 100 further includes a radiation unit 11 disposed on the top of the bridge face plate 8. [ The irradiation unit 11 emits ultraviolet light 22 for curing the imprint material 4a. The injected ultraviolet light 22 is reflected by the mirror 21 and is applied to the wafer 4.

The mold 9 has a pattern portion 9a as a pattern formation surface facing the wafer 4 (in the negative Z direction). The pattern portion 9a has, for example, a concavo-convex pattern with a line width of several tens of nanometers. The surface of the mold 9 opposite to the pattern portion 9a is held by the mold chuck described above. The mold 9 may be constructed of a material that allows ultraviolet light 22 to pass through, for example, quartz.

The imprint apparatus 100 further includes a mold-side catching unit (second catching unit). A part of the mold-side catching unit is disposed under the holding mechanism (10). In this embodiment, the mold-side catching unit comprises an electrostatic chuck 12, a charging plate 13 held by the electrostatic chuck 12, and a charging unit 13 connected to the electrostatic chuck 12 and the charging plate 13, And a voltage source 14 for supplying a voltage to the element. An electrostatic chuck (12) is disposed below the holding mechanism (10). The charging plate 13 is disposed on the side opposite to the holding mechanism 10 of the electrostatic chuck 12 (facing the wafer).

The charging plate 13 is a rectangular conductive plate having a rectangular opening 13a (see Fig. 2A). The charging plate 13 has the same shape as the electrostatic chuck 12. A trapping area (second trapping area) 13b for trapping (collecting) charged particles by electrostatic force is formed on the charging plate 13 so as to surround the arrangement space for the mold 9. [ The acquisition area 13b extends along the mold 9. [

In this embodiment, the term "placement space for the mold 9" refers to the space occupied by the mold 9 when the mold 9 is placed in that space.

The term "surrounds the arrangement space for the mold 9" in this embodiment means that the arrangement space for the mold 9 in the direction perpendicular to the pattern portion 9a of the mold 9 and the arrangement space for the mold 9 , It means that at least the acquisition area 13b surrounds the outer periphery of the space. This term also means that the side surface (extending in the vertical direction) of the mold 9 is a part of the mold side catching unit (in this embodiment, the electrostatic chuck 12 and the charge plate 13 )). ≪ / RTI >

2A is a plan view of the mold 9 and the charging plate 13 of this embodiment, as viewed from directly below. The acquisition area 13b may be a rectangular area that surrounds or extends along four sides of the outer shape of the arrangement space (second space) for the mold 9. [ In Fig. 2A, the arrangement space for the mold 9 is the same space occupied by the mold 9. Fig. The outer shape of the arrangement space is a shape of the arrangement space seen from the vertical direction (Z direction). As in the present embodiment, the acquisition area 13b can be provided by a continuous and rectangular charging plate 13. [

The length of each side of the outer shape of the charging plate 13 is 3.0 times or less the length of the corresponding side of the mold 9, for example. If the length of the sides of the outer shape of the charging plate 13 is excessively short, the trapping area for the particles 20 is reduced (see Figs. 4A and 4B). If the length is excessively short, the size of the imprint apparatus 100 will increase.

In order to correct the shape of the pattern portion 9a by applying an external force to the side surface of the mold 9 during imprinting, an actuator for shape correction, for example, is provided between the mold 9 and the charging plate 13 (In an area inside the rectangular opening 13a of the mold 13 and outside the mold 9). In this case, the length of each side of the outer shape of the charging plate 13 is preferably at least 1.5 times the length of the corresponding side of the mold 9.

2A shows a continuous charging plate 13, the charging plate 13 may have any shape capable of providing a trapping region 13b surrounding the placement space for the mold 9. [ The charging plate 13 may be formed such that four corners are removed and the charging plate 13 is composed of four segments as shown in FIG. 2B. 2C, the electrostatic chuck 12 is disposed so that each segment is positioned in a part of the portion of the charging plate 13 extending along each side of the charging plate 13 Segment < / RTI > In this case, the trapping region 13b is also provided in a part of the portion extending along each side of the charging plate 13. [ The acquisition area 13b may be disposed along four sides of the arrangement space. The acquisition area 13b may be in the shape of a ring surrounding the mold 9.

In the mold-side catching unit, the voltage source (second control unit) 14 controls the voltage to charge the trapping region 13b. Thereby, the electrostatic chuck 12 pulls and holds the charge plate 13, and the trapping region 13b can generate an electric field. The generated electric field captures the charged particles. The voltage source 14 controls the supply voltage so that the trapping region 13b is charged to the same polarity as that of the mold 9. [

A meter (not shown) for determining the charge polarity of the mold 9 may be disposed, and the polarity of the voltage supplied by the voltage source 14 may be determined based on the determination result of the meter. Alternatively, the voltage source 14 can charge the trapping region 13b with the same polarity as that of the mold 9, which is liable to be charged. The polarity that the mold 9 is liable to charge by separation charging is determined by the relationship between the material of the mold 9 and the material of the imprint material 4a.

For example, when the imprint material 4a made of a urethane, acrylic, or epoxy material contacts the mold 9 made of quartz, the mold 9 is likely to be positively charged and the imprint material 4a has a negative It is easy to fight with. Therefore, when the above-described measuring instrument is not disposed, the voltage source 14 can positively charge the trapping region 13b.

The imprint apparatus 100 further includes a wafer-side catching unit (a catching unit or a first catching unit). In this embodiment, the wafer-side catching unit comprises an electrostatic chuck 30, a charging plate 31 disposed on the electrostatic chuck 30, an electrostatic chuck 30 and a charging plate 31, And a voltage source (control unit or first control unit) 32 for supplying a voltage. The electrostatic chuck 30 is disposed on the stage 6 so as to surround the outer periphery of the arrangement space (first space) of the wafers 4. 5A and 5B, the arrangement space for the wafers 4 is the same as the space in which the wafers 4 are arranged.

The charging plate 31 is a conductive plate having the same shape as the electrostatic chuck 30. On the charging plate 31, a trapping region (first trapping region) 31b for trapping charged particles by electrostatic force is formed so as to surround the arrangement space for the wafer 4. The acquisition region 31b extends along the wafer 4.

In this embodiment, the term "arrangement space for the wafer 4 " refers to a space occupied by the wafer 4 when the wafer 4 is arranged in a space.

In this embodiment, the term "surrounds the arrangement space for the wafer 4" means that the arrangement space in the direction perpendicular to the pattern formation surface of the arranged wafer 4 and the arrangement space at least when the charging plate 31 is viewed And the region 31b surrounds the periphery of the arrangement space for the wafer 4. [ This term means that the side surface (extending in the vertical direction) of the wafer 4 is a part of the wafer-side catching unit (in this embodiment, the electrostatic chuck 30 and the charging plate 31 )).

3A is a plan view of the wafer 4 and the charge plate 31 of this embodiment, as viewed from directly above. The charging plate 31 can have an outer diameter of 2.0 times or less the outer diameter of the wafer 4. [

In the wafer-side catching unit, a voltage source (control unit or first control unit) 32 controls the voltage to charge the trapping region 31b. As a result, the electrostatic chuck 30 pulls and holds the charging plate 31, and the trapping region 31b can generate an electric field. The generated electric field captures the charged particles. The voltage source 32 controls the supply voltage so that the trapping region 31b is charged to the same polarity as that of the mold 9.

A meter (not shown) for determining the charge polarity of the mold 9 can be disposed, and the polarity of the voltage supplied by the voltage source 32 can be determined based on the determination result of the meter. Alternatively, the voltage source 32 can charge the trapping region 31b with the same polarity as that of the mold 9, which is liable to be charged. Therefore, when the above-described measuring instrument is not disposed, the voltage source 32 can positively charge the trapping region 31b.

3B, the electrostatic chuck 30 may include a segment, and the charge plate 31 may be configured such that the segments are spaced apart from the wafer 4 " ) In a non-continuous manner. The term "discontinuously surrounds" means a state in which a segment surrounds 80% or more of the outer periphery of the arrangement space of the wafers 4. 3C, the segments of the electrostatic chuck 30 can be arranged so as to discretely surround the arrangement space for the wafer 4 with the acquisition region 31b.

Referring again to FIG. 1, the imprint apparatus 100 further includes an observation system 15 disposed directly above the mold 9. The observation system 15 detects the alignment mark of the pattern portion 9a and the alignment mark (not shown) of the wafer 4. [ The imprint apparatus 100 further includes a supply unit 16 for supplying the imprint material 4a in an uncured state to a predetermined position when the wafer 4 is positioned under the supply unit 16. [

The imprint apparatus 100 further includes a controller 17. The controller 17 is connected to the stage 6, the holding mechanism 10, the irradiation unit 11, the voltage sources 14 and 32, the observation system 15, and the supply unit 16. The control unit 17 centrally controls these components to execute the imprint processing. The term " imprint process "as used herein means to perform a series of operations, namely, to supply the imprint material 4a to a pattern forming area (not shown) on the wafer 4, to supply the imprint material 4a with the mold 9 ), Curing the imprint material (4a), and separating the mold (9) from the imprint material (4a).

The imprint apparatus 100 according to the present embodiment can reduce the phenomenon that the pattern unit 9a catches particles in the imprint apparatus 100. [ Now let's discuss the reduction of this phenomenon.

4A and 4B are diagrams illustrating the first advantage of the first embodiment. 4A shows a state in which the supply of the imprint material 4a from the supply unit 16 to the wafer 4 is finished while the stage 6 is stopped, And shows a state in which the charged particles 20 have fallen. 4B shows the stage 6 from the position where the imprint material 4a faces the supply unit 16 to the other position where the imprint material 4a faces the mold 9 (below the pattern portion 9a) Driving and moving. The trapping region 13b can capture particles 20 that have passed through the lower portion of the charging plate 13 by attracting them by an electrostatic force (static electricity).

5A and 5B are views for explaining the second advantage of the first embodiment. 5A shows a state in which supply of the imprint material 4a from the supply unit 16 to the wafer 4 is terminated while the stage 6 is stopped. 5B shows a state in which the air current generated by the driving of the stage 6 moves the negatively charged particles 20 toward the mold 9 and downward. As shown in Fig. 5B, the trapping region 13b can be attracted by attracting the particles 20 by an electrostatic force.

Although capture of the particles 20 by the capture region 13b has been described with reference to Figs. 4a-5b, the capture region 31b adjacent to the wafer 4 can capture the particles 20 as well.

As described above, the trapping regions 13b and 31b are charged with the same polarity as the charged polarity of the mold 9. As shown in Figs. 4A and 4B, the particles 20 deposited on the stage 6 can be captured by the charge plate 13 surrounding the pattern portion 9a. The particles 20 moving toward the mold 9 and downward with the airflow generated by the driving of the stage 6 can be trapped on the charging plate 13 surrounding the pattern portion 9a have.

This reduces the possibility that the negatively charged particles 20 can be captured by the pattern portion 9a due to the separation charging. In addition, this reduces the likelihood that particles 20 will get caught between the mold 9 and the wafer 4 when the mold 9 contacts the imprint material 4a. This makes it possible to prevent breakage of the pattern portion 9a of the mold 9 caused by the particles 20 and pattern defects.

At least one of the voltage sources 14 and 32 can supply a voltage such that the absolute value of the potential of the corresponding one of the trapping regions 13b and 31b becomes larger than the absolute value of the potential of the mold 9. As a result, the particles 20 can be easily trapped in the corresponding ones of the charge plates 13 and 31 than the mold 9. Particularly, when the voltage source 32 allows the absolute value of the potential of the trapping region 31b to be larger than that of the mold 9, the particles 20 captured by the charge plate 31 are attracted to the mold 9, It can be prevented from moving to the mold 9 when approaching the mold 9.

Second Example

6 shows an imprint apparatus 120 according to a second embodiment of the present invention. The imprint apparatus 120 includes components other than the charging plate 13 and the electrostatic chuck 12 of the imprint apparatus 100. [

The voltage source 32 supplies a voltage of approximately 0.5 to 5 kV, for example. The distance between the mold 9 and the wafer 4 is approximately a few millimeters. The voltage source 32 supplies a voltage such that the charging plate 31 is charged with the same polarity as the polarity of the mold 9. Thus, the particles 20 to be attached to the mold 9 can be trapped only by the electric field generated from the charging plate 31.

The potential of the mold 9 can be measured using a measuring device (not shown). The voltage source 32 can supply the voltage based on the measurement result such that the potential of the charging plate 31 is higher than that of the mold 9. [ Not only the particles 20 to be attached to the mold 9 but also the particles 20 which are part of the particles 20 which are easily separated from the mold 9 and are deposited on the mold 9 are also attracted by the charge plate 31, can do.

The second embodiment provides the same advantages as those of the first embodiment. Particularly, the possibility that the particles 20 are sandwiched between the mold 9 and the wafer 4 when the mold 9 contacts the imprint material 4a can be reduced, It is possible to prevent breakage of the pattern portion 9a of the mold 9 and pattern defects. In addition, in comparison with the first embodiment, the imprint apparatus 120 according to the second embodiment has a simplified configuration.

Third Example

The imprint apparatus according to the third embodiment has the same configuration as the imprint apparatus 100 according to the first embodiment. The third embodiment is different from the first embodiment in that each of the voltage source 14 and the voltage source 32 controls the supply voltage so that the trapping regions 13b and 31b are charged in opposite polarities. In the third embodiment, the trapping region 31b is positively charged, and the trapping region 13b is negatively charged.

The negatively charged particles 20 are trapped by the trapping region 13b rather than the positively charged pattern portion 9a by separation charging. On the other hand, the positively charged particles 20 are attracted to the trapping region 31b, not to the imprint material 4a negatively charged by the separation charging and the shot region around the imprint material 4a.

Positively charged particles 20 and negatively charged particles 20 can be captured because the voltage sources 14 and 32 control the supply voltage so that the charge plates 13 and 31 are charged in opposite polarities. This reduces the possibility that the particles 20 can be sandwiched between the mold 9 and the wafer 4 when the mold 9 contacts the imprint material 4a, It is possible to prevent breakage of the pattern portion 9a of the mold 9 and pattern defects.

The same advantage can be obtained when each of the trapping areas 13b and 31b is charged in the opposite polarity to that of the third embodiment.

Fourth Example

7A and 7B show an imprint apparatus 200 according to the fourth embodiment. The imprint apparatus 200 has the same configuration as the imprint apparatus 100 according to the first embodiment. Each of the voltage sources 14 and 32 supplies a voltage of the same polarity as that of the third embodiment, that is, the capture region 13b is positively charged and the capture region 31b is negatively charged.

The charge plate 13 is pressed against the charge plate 31 in a state in which a part of the charge plate 13 faces a part of the charge plate 31 in the imprint of a part of the pattern formation region (shot region) Lt; / RTI > Discharge may occur when a part of the charging plate 13 approaches a part of the charging plate 31 while the charging plates 13 and 31 are charged with the opposite polarity and the potential difference between these plates is large. The charge plates 13 and 31 may be burned by discharge and may have to be replaced. Further, the discharge noise may cause an error in the voltage sources 14 and 32, for example.

According to the fourth embodiment, the voltage supplied from each of the voltage sources 14 and 32 is changed based on the details of the pattern forming operation during the pattern forming operation, thus minimizing the possibility of discharging. The term "during pattern forming operation " means a time period between the time when the imprint material 4a is supplied to the pattern forming area on the wafer 4 and the time when the mold 9 is separated from the molded imprint material 4a do.

8 is a flowchart of a process of forming a pattern in each region of one wafer 4. In Fig. The controller 17 executes the program shown in the flowchart. At the start of the process shown by the flowchart, the electrostatic chuck 12 holds the charging plate 13, and the electrostatic chuck 30 holds the charging plate 31.

The voltage source 14 supplies a set voltage (+2 kV in this embodiment) to charge the trapping region 13b so that the trapping region 13b has a predetermined potential. Similarly, the voltage source 32 supplies a set voltage (-2 kV in the present embodiment) to charge the trapping region 31b so that the trapping region 31b has a predetermined potential (S101).

The controller 17 allows the supply unit 16 to supply the imprint material 4a to the wafer 4 (S102).

The controller 17 drives the stage 6 to move the wafer 4 to a position where the wafer 4 faces the mold 9 (S103). The controller 17 determines whether the wafer 4 is positioned at the imprint position (S104).

If it is determined that the wafer 4 is not positioned (NO in S104), the controller 17 drives the stage 6 until the wafer 4 is positioned at the imprint position. If it is determined that the wafer 4 has been positioned (YES in S104), the controller 17 starts driving the mold 9 in the Z direction to move the mold 9 downward from its standby position S105). Simultaneously with the start of the downward movement of the mold 9, the controller 17 controls the voltage sources 14 and 32 so that the absolute value of the voltage supplied from each voltage source drops from 2 kV to 1 kV (S106). By lowering the voltage, the electrostatic force generated from each of the trapping regions 13b and 31b is reduced.

As a result, when the charging plate 13 approaches the charging plate 31, the discharge becomes difficult to occur. The controller 17 executes the imprint operation (S107). The imprinting operation is performed by aligning the mold 9 with the wafer 4 while the mold 9 is in contact with the imprint material 4a and irradiating the imprint material 4a with the ultraviolet light 22 to form the imprint material 4a Curing the mold 9 and separating the mold 9 from the imprint material 4a.

Upon completion of the imprinting operation, the controller 17 starts driving the mold 9 in the Z direction to move the mold 9 upward to the stand-by position, thus driving the mold 9 from the imprint material 4a (S108). The controller 17 determines whether or not the mold 9 has returned to the standby position (S109). If it is determined that the mold 9 has not returned to the standby position (NO in S109), the controller 17 moves the mold 9 upwardly until the mold 9 returns to the standby position. When it is judged that the mold 9 has returned to the standby position (YES in S109), the controller 17 controls the voltage sources 14 and 32 so that the absolute values of the potentials of the charging plates 13 and 31 are 1 kV To 2 kV (S110).

The controller 17 determines whether or not a pattern is formed in all the shot areas (S111). If it is determined that the formation of the pattern is not completed (NO in S111), the controller 17 repeats Steps S102 to S111. If it is determined that the formation of the pattern is completed (YES in S111), the controller 17 ends the program.

9 is a graph showing the relationship between the positional change of the mold 9 over time and the voltage change applied to the charging plate 13 over time. The controller 17 determines the voltage of each of the voltage sources 14 and 32 when the controller 17 starts to move the mold 9 downward and when the controller 17 completes the upward movement of the mold 9 Change it.

As described above, the controller 17 controls the voltage sources 14 and 32 so that the voltage applied to each of the charge plates 13 and 31 decreases when the charge plates 13 and 31 charged with the opposite polarities approach each other, . Specifically, when the distance between the charging plate 13 in the Z direction and the charging plate 31 is a second distance less than the first distance, each of the voltage sources 14 and 32 supplies a voltage lower than the voltage for the first distance And supplies it to the corresponding charging plate. Thereby, it is possible to prevent the electrostatic force acting between the charging plate 13 and the charging plate 31 from excessively increasing to cause discharge.

In the fourth embodiment, the voltages supplied from the voltage sources 14 and 32 are simultaneously changed by the same amount. The voltage can be controlled so that the potential between the trapping region 13b and the trapping region 31b is reduced. At least one of the voltage sources 14 and 32 may change the supply voltage.

The voltage control timing for the charging plate 13 may be different from that for the charging plate 31. [ The voltage sources 14 and 32 are connected in such a manner that the voltage supplied from each voltage source is reduced before the start of the downward movement of the mold 9 or the voltage supplied from each voltage source reaches the original Quot; value " In this case, a threshold value for the distance between the charging plate 13 and the charging plate 31 in the Z direction can be set. When the discharge is likely to occur, the voltage supplied from each voltage source may be changed.

The voltage may slowly increase or decrease. A high voltage may be applied to each of the charge plates 13 and 31 in order to generate a force to attract the particles 20. In order to prevent discharge, a low voltage may be applied during downward movement of the mold 9. In this case, it is necessary to prevent the voltage from becoming excessively low (for example, 0 V) because an excessively low voltage can release the trapped particles 20.

Fifth Example

An increase in the amount of particles 20 captured in the trapping regions 13b, 31b results in a decrease in capacity for capturing new particles 20. Therefore, it is necessary to periodically exchange at least one charge plate. 10A and 10B show an exemplary configuration of the imprint apparatus 300 according to the fifth embodiment.

The imprinter device 300 includes a transport mechanism (exchange mechanism) 40 in addition to the same components as those of the imprint apparatus 100. As shown in Fig. 10B, the transport mechanism 40 has an extendable configuration. The transport mechanism 40 automatically carries the charging plate 13 from the imprint apparatus 300 at regular intervals or at regular intervals (at a predetermined time). With respect to the timing of the exchange, for example, the exchange is performed each time the imprint apparatus 300 operates for a predetermined period, or whenever a predetermined number of wafers 4 are subjected to pattern formation.

The voltage source 14 is controlled so as to reduce the voltage supplied from the voltage source 14 in a state in which the transport mechanism 40 is partially located below the charging plate 13. [ Therefore, the charging plate 13 can be easily removed. This is because the force generated by the weight of the charging plate 13 by the decrease of the voltage supplied from the voltage source 14 is larger than the force generated by the electrostatic chuck 12 to attract the charging plate 13 Because.

The transport mechanism (40) includes a portion (41) for supporting the charging plate (13). The area of the portion 41 may be larger than the area of the trapping region 13b of the charging plate 13. [ Further, the portion 41 of the transport mechanism 40 has a concave surface. The concave surface can be positively charged. Thereby, the particles 20, which are liable to scatter due to the reduction of the trapping force in the trapping region 13b during the exchange, are prevented from scattering from the imprint apparatus 300. [

Next, the transport mechanism 40 carries the charging plate (not shown) different from the removed charging plate 13 into the imprint apparatus 300, and allows the charging plate to be attracted to the electrostatic chuck 12.

As described above, the imprint apparatus 300 can capture the particles 20 like the imprint apparatus 100, and can prevent the pattern defects and the mold 9 from being damaged. The imprint apparatus 300 can prevent a decrease in the force for capturing the particles 20 by replacing the charging plate 13 at an appropriate time.

Since the imprint apparatus 300 includes the transport mechanism 40, the open space of the imprint apparatus 300 can be minimized as compared with the case where a person enters the imprint apparatus 300 and exchanges the charge plate 13 . This reduces the possibility that new particles can enter the imprint apparatus 300 during the exchange of the charging plate 13. [ As a result, this reduces the possibility that the particles 20 can be captured by the pattern portion 9a.

6th Example

The imprint material 4a in an uncured state can be discharged from the supply unit 16 in the form of fine mist or droplet and the droplet can be captured by the wafer 4. [ When a droplet of the uncured imprint material 4a is trapped by any of the pattern formation regions to which the imprint material 4a is not supplied, pattern defects will occur at the time of pattern formation in this region. The imprint apparatus may include a charging mechanism (not shown) such as an ionizer for charging a droplet of the imprint material 4a so that the charging mechanism is disposed between the supply unit 16 and the wafer 4. [

For example, if a negative charge is given to the imprint material 4a near the supply unit 16, the charge plate 13 can catch the droplet of the imprint material 4a. Thereby, the droplet is prevented from being caught by the wafer 4. The imprint material 4a to be supplied to the wafer 4 will be attracted to the charging plate 13 when the charging force of the charging plate 13 is excessively strong. The voltage source 14 thus controls the voltage applied to the charging plate 13.

Seventh Example

11 shows an imprint apparatus 400 according to the seventh embodiment. The imprint apparatus 400 includes a ring shaped gas outlet 45 forming an air curtain 46 in addition to the same components as those of the imprint apparatus 100. Referring to Fig. 11, the gas outlet 45 is suspended to surround the holding mechanism 10. The particles 20 can be prevented from being drawn into the space 47 formed by the air curtain 46 when the flow rate of the gas is adjusted so that the air curtain 46 reaches the base face plate 2. [

The imprint apparatus 400 can capture the particles 20 of the trapping regions 13b and 31b like the imprint apparatus 100 and can prevent pattern defects and breakage of the mold 9. [ In addition, the imprint apparatus 400 can reduce the amount of the particles 20 floating around the mold 9 using the air curtain 46, and accordingly, the particles (that is collected by the charge plate 13 per unit time 20). Accordingly, the imprint apparatus 400 can reduce the replacement period of the charging plate 13 and provide the same advantages as those of the first embodiment.

Eighth Example

In the mold-side catching unit and the wafer-side catching unit, the electrostatic chucks 12 and 30 can be removed as long as these units provide the trapping areas in the charged state in other different ways, respectively. The voltage sources 14 and 32 can be removed as long as these units always provide a charged area.

With respect to another wafer side catching unit, a description will now be made of a charge plate 50 that provides a trapping area for trapping the particles 20 with reference to Figs. 12A and 12B. 12A is a plan view of the charging plate 50 as viewed from directly above. 12B is a cross-sectional view showing the charging plate 50 of FIG. 12A. 12A, the charging plate 50 includes a plurality of electric wirings 51 arranged concentrically around the arrangement space of the wafers 4, and a plurality of electric wirings 51 arranged on the electric wirings 51 as shown in Fig. Shaped dielectric body 52 to be disposed.

The dielectric 52 is arranged to minimize the possibility of discharge when a high voltage is applied to the electric wiring 51. [ In this embodiment, the trapping region is provided to the dielectric 52 so that the trapping region extends over the region where the electric wiring 51 is disposed. The electric wiring 51 is disposed on the support 53.

The electric wiring 51 is connected to the voltage source 32. When voltage is supplied from the voltage source 32, the electric wiring 51 generates an electrostatic force, whereby the particles 20 can be caught. The voltage source 32 can change the polarity of the voltage from one electric wiring 51 to the other electric wiring.

The electric wiring 51 of the charging plate 50 need not be arranged concentrically around the wafer 4. [ The number of the electric wirings 51 and the shape of the electric wirings 51 are not limited to those described above as long as the electric wirings 51 surround the arrangement space for the wafers 4. A plurality of electric wirings 51 may be arranged parallel to each other in one direction so as to surround the arrangement space for the wafers 4 (see Fig. 13). Alternatively, one long electrical wiring 51 may be folded several times to surround the arrangement space for the wafer 4. [

The height difference between the dielectric 52 and the wafer 4 may be less than or equal to 1 mm. When the gas in the space below the pattern portion 9a is exchanged with another gas, the dielectric 52 can introduce another gas to efficiently supply the gas to the space below the pattern portion 9a.

Fig. 14 shows another mold side capturing unit. Like the charging plate 50, the charging plate 60 includes an electric wiring 61 surrounding the arrangement space for the mold 9 as shown in Fig. 14, and an electric wiring 61 (Not shown) disposed on the dielectric layer (not shown). As long as the electric wiring 61 surrounds the mold 9, the number of the electric wiring 61 and the shape of the electric wiring 61 are not limited to the above-described shape. A plurality of electric wirings 61 may be arranged parallel to each other in one direction so as to surround the mold 9. Alternatively, one long electrical wiring 61 may be folded several times to surround the mold 9. [

The mold-side catching unit and the wafer-side catching unit of this embodiment can be applied to any of the imprint apparatuses 100, 110, 200, 300 and 400.

Other Example

As used herein, the term "particle 20" refers to a material that is not intended to be associated with pattern formation. Examples of the particles 20 include solids composed of the suspended droplets of the dried imprint material 4a supplied by the ink jet method, solids composed of the suspended droplets of the imprint material 4a supplied by the spin coating method, Fine particles generated from the components included in the imprint apparatus, and dust in the imprint apparatus.

In each of the above-described configurations, the electrostatic chuck 12 is attached to the lower surface of the holding mechanism 10. The configuration is not limited to the above-described configuration. For example, a supporting member may be attached to the bridge face plate 8, and the electrostatic chuck 12 and the charging plate 13 may be disposed on the supporting member instead of the holding mechanism 10. [

In each of the first to seventh embodiments, the charging plates 13 and 31 are arranged so that the trapping areas 13b and 31b extend along the horizontal plane (the surface of the substrate). The arrangement of the trapping region for trapping the particles 20 by the electrostatic force of the present invention is not limited to the above arrangement. The trapping areas 13b and 31b surrounding the arrangement space for the mold 9 and the arrangement space for the wafer 4 can be inclined with respect to the horizontal plane or extend in the vertical direction, respectively.

With respect to the imprint material, a curable composition (also referred to as "uncured resin") which is cured by receiving curing energy is used. Examples of curing energies include electromagnetic waves and heat. Examples of electromagnetic waves include light such as infrared rays, visible rays, and ultraviolet rays whose wavelength is selected in the range of 10 nm to 1 mm.

The curable composition cures when light is irradiated or heated. The curable composition that is cured by light may contain at least a polymerizable compound and a photoinitiator, and may contain a non-polymerizable compound or a solvent as required. The non-polymer compound is at least one compound selected from the group consisting of a sensitizer, a hydrogen donor, an internal release agent, a surfactant, an antioxidant, and a polymer component.

The imprint material is imparted to the wafer 4 in a film form by a spin coater or a slit coater. Alternatively, the imprint material can be imparted to the wafer 4 in the form of a droplet or a connected droplet in the form of a film or a film by the liquid jet head. The imprint material has a viscosity (viscosity at 25 DEG C) of, for example, 1 mPa * s or more and 100 mPa * s or less.

The above-described first to eighth embodiments and other embodiments can be suitably combined to provide an imprint apparatus having a plurality of features.

How to make goods

A pattern composed of a cured material formed using an imprint apparatus is used permanently as at least part of the article or is temporarily used for article manufacture.

Examples of articles include electrical circuit elements, optical elements, micro-electro-mechanical systems (MEMS), recording elements, sensors, and molds.

Examples of the electric circuit element include a volatile or nonvolatile semiconductor memory such as a dynamic random access memory (DRAM), a static random access memory (SRAM), a flash memory, and a magnetoresistive random access memory (MRAM) a charge-coupled device, an image sensor, and a field programmable gate array (FPGA). Examples of molds include imprint molds.

The pattern comprised of the cured material is used as at least one component, such as an article, or is temporarily used as a resist mask. The resist mask is removed from the wafer 4 after etching or ion implantation.

The article manufacturing method may include forming a pattern on the substrate using an imprint apparatus, and processing the substrate having the pattern. Examples of processing steps include etching, ion plating, oxidation, deposition, deposition, planarization, resist stripping, dicing, bonding, packaging, and the like.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the following claims is to be accorded the broadest interpretation so as to encompass all such modifications and equivalent structures and functions.

This application claims priority from Japanese Patent Application No. 2015-087839, filed April 22, 2015, which is incorporated herein by reference in its entirety, and Japanese Patent Application No. 2016-016451, filed January 29, I argue.

Claims (14)

An imprint apparatus for forming a pattern of an imprint material on a substrate using a mold,
And a trapping unit having the trapping area for trapping particles by an electrostatic force so as to surround the trapping area for the substrate. The method according to claim 1,
Wherein the capture unit includes a control unit configured to control a voltage to charge the capture area,
Wherein the control unit controls the voltage so that the trapping area is charged to the same polarity as the polarity of the mold. The imprint apparatus according to claim 2, wherein the control unit controls the voltage so that the absolute value of the potential of the trapping region is larger than the absolute value of the potential of the mold. The method according to claim 1,
Wherein the capture unit includes a control unit configured to control a voltage to charge the capture area,
Wherein the control unit controls the voltage so that the trapping area is positively charged. 5. The method according to any one of claims 1 to 4,
The capturing area is a first capturing area, the capturing unit is a first capturing unit,
Wherein the apparatus further comprises a second acquisition unit having the second acquisition area for capturing particles by electrostatic force such that the second acquisition area surrounds the placement space for the mold. 6. The method of claim 5,
Wherein the first capturing unit includes a first control unit configured to control a voltage to charge the first capturing area,
The second capturing unit includes a second control unit configured to control a voltage to charge the second capturing area,
Wherein the first and second control units charge the first and second acquisition regions at opposite polarities. 7. The apparatus according to claim 6, wherein at least one of the first and second control units changes the voltage during operation to form the pattern. 8. The apparatus of claim 7, wherein at least one of the first and second control units is configured to determine whether a potential difference between the first and second acquisition regions spaced by a second distance < And controls the voltage to be less than the potential difference between the first and second acquisition regions. 9. The method according to any one of claims 1 to 8,
And an exchange mechanism configured to exchange a portion including the trapped region having the trapped particles at a predetermined time. 10. The imprinting apparatus according to any one of claims 1 to 9, wherein the trapping region extends along the substrate. 5. The imprinting apparatus according to any one of claims 1 to 4, wherein the catching unit comprises an electric wiring surrounding a placement space for the substrate and a dielectric disposed in the electric wiring. An imprint method for forming a pattern of an imprint material on a substrate using a mold,
(a) charging a trapping region surrounding a deposition space for a substrate;
(b) moving the substrate to a position at which the substrate faces the mold; And
(c) forming a pattern on the substrate,
Wherein said step (a) comprises capturing particles by electrostatic force generated from a charged capture zone. 13. The method of claim 12,
Wherein the acquisition area is a first acquisition area,
The method further comprises the step of charging (d) charging a second acquisition area surrounding the placement space for the mold, wherein step (d) is performed before step (b)
(E) controlling at least one charge amount of the first and second acquisition regions to reduce electrostatic force generated from a corresponding one of the first and second acquisition regions, Wherein step (e) is performed between step (d) and step (c). A method of manufacturing an article,
Forming a pattern on the substrate using the imprint apparatus according to any one of claims 1 to 11; And
And processing the substrate on which the pattern is formed.

Images