TWI649014B - 軟性電子設備及其製造方法 - Google Patents
軟性電子設備及其製造方法 Download PDFInfo
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Abstract
一種軟性電子設備及其製造方法,其中,該電子設備包括:一軟性基板以及形成於該軟性基板上的設備層;該設備層包括相互連接的半導體結構和第一導線結構,該第一導線結構的延伸方向與該半導體結構的溝道方向一致;該第一導線結構的延伸方向與該軟性基板的拉伸方向形成小於90°的夾角。在本發明提供的軟性電子設備及其製造方法中,藉由調整半導體結構的溝道方向和第一導線結構的延伸方向,使得該半導體結構和第一導線結構受應力影響最小,從而保證該軟性電子設備的電性能以及抗揉性能。
Description
本發明有關於軟性電子技術領域,特別有關於一種軟性電子設備及其製造方法。
軟性電子(Flexible Electronics)技術是一種建立在軟性基板之上的電子技術,由於其獨特的軟性和延展性,在資訊、能源、醫療、國防等領域具有廣泛的應用前景。採用軟性電子技術製作的軟性電子設備具有輕薄、能夠彎曲或捲曲成任意形狀的特性,例如軟性印刷電路板、軟性晶片和軟性顯示器等。
現有的軟性電子設備通常包括一軟性基板以及製作於該軟性基板之上的設備層,該設備層包括半導體結構和導線結構,該半導體結構具有開關作用,該導線結構用以與其他的設備電性連接。其中,部分導線結構為了與該半導體結構配套,其延伸方向與該半導體結構的溝道方向平行。
請參考圖1,其為現有技術的軟性電子設備的結構示意圖。如圖1所示,現有的軟性電子設備100包括軟性基板110以及形成於該軟性基板110上的設備層,該設備層包括半導體結構120以及與該半導體結構120配套的導線結構130,該導線結構130的延伸方向與該半導體結構120的溝道方向(虛線雙向箭頭所示)平行。
當該軟性電子設備100處於彎曲狀態時,該軟性基板110和設備層都會受到應力影響。請參考圖2,其為現有技術的軟性電子設備在受到應力時的結構示意圖。如圖2所示,該軟性電子設備100所受應力方向與該半導體結構120的溝道方向平行時,該半導體結構120會受到沿溝道方向的拉力以及垂直於該拉力方向的收縮力,該半導體結構120在這兩種力的作用下發生形變,導致流經該半導體結構120的電流出現變化,同時,由於該導線結構130的延伸方向與應力方向相同,經過拉伸後,該導線結構130會變細變長,非常容易斷裂。
由上述可知,現有的軟性電子設備100受到應力作用時半導體結構120和導線結構130的結構會發生變化,導致設備層的電性能和抗揉性能變差。
本發明的目的在於提供一種軟性電子設備及其製造方法,以解決現有的軟性電子設備受應力影響導致電子設備的電性能和抗揉性能下降的問題。
為解決上述技術問題,本發明提供一種軟性電子設備,該軟性電子設備包括:一軟性基板以及形成於該軟性基板上的設備層;該設備層包括相互連接的半導體結構和第一導線結構,該第一導線結構的延伸方向與該半導體結構的溝道方向一致;該第一導線結構的延伸方向與該軟性基板的拉伸方向形成小於90°的夾角。
可選的,在所述的軟性電子設備中,該第一導線結構
的延伸方向與該軟性基板的拉伸方向所形成的夾角範圍在40°~70°之間。
可選的,在所述的軟性電子設備中,該設備層還包括第二導線結構,該第二導線結構設置於該軟性基板的邊緣,且該第二導線結構的延伸方向與該軟性基板的邊緣線平行。
可選的,在所述的軟性電子設備中,該第二導線結構上設置有多個通孔,該通孔的形狀為平行四邊形,該平行四邊形具有與該軟性基板的拉伸方向一致的對角線。
可選的,在所述的軟性電子設備中,該軟性電子設備為軟性平板顯示設備,該軟性平板顯示設備具有多個像素單元,該像素單元的邊界線圖形為平行四邊形,該平行四邊形具有與該軟性基板的拉伸方向一致的對角線。
可選的,在所述的軟性電子設備中,該平行四邊形的四條邊與該平行四邊形的該對角線所形成的夾角範圍在40°~70°之間。
可選的,在所述的軟性電子設備中,該軟性電子設備為軟性液晶顯示器。
可選的,在所述的軟性電子設備中,該軟性電子設備為軟性有機發光顯示器。
相應的,本發明還提供一種軟性電子設備的製造方法,該軟性電子設備的製造方法包括:提供一軟性基板;以及在該軟性基板上分別形成半導體結構和導線結構,該半導體結構的溝道方向與該導線結構的延伸方向一致,並與該軟性基板的拉
伸方向形成小於90°的夾角。
相應的,本發明還提供一種軟性電子設備的製造方法,該軟性電子設備的製造方法包括:提供一軟性基板;以及在該軟性基板上分別形成多個像素單元、第一導線結構和第二導線結構;其中,該像素單元具有半導體結構,該半導體結構的溝道方向與該第一導線結構的延伸方向一致,並與該軟性基板的拉伸方向形成小於90°的夾角;該第二導線結構設置於該軟性基板的邊緣,該第二導線結構的延伸方向與該軟性基板的邊緣線平行,該第二導線結構上形成有多個通孔,該通孔的形狀為平行四邊形,該平行四邊形的對角線與該軟性基板的拉伸方向一致。
在本發明實施例提供的軟性電子設備及其製造方法中,藉由調整半導體結構的溝道方向和第一導線結構的延伸方向,使得該半導體結構和第一導線結構受應力影響最小,從而保證該軟性電子設備的電性能以及抗揉性能。
30‧‧‧像素單元
40‧‧‧通孔
100‧‧‧軟性電子設備
110‧‧‧軟性基板
120‧‧‧半導體結構
130‧‧‧導線結構
200‧‧‧軟性電子設備
210‧‧‧軟性基板
220‧‧‧半導體結構
230‧‧‧第一導線結構
300‧‧‧軟性電子設備
310‧‧‧軟性基板
330‧‧‧設備層
圖1是現有技術的軟性電子設備的結構示意圖;圖2是現有技術的軟性電子設備在受到應力時的結構示意圖;圖3是本發明實施例一的軟性電子設備的結構示意圖;圖4是本發明實施例的軟性電子設備在受到應力時的結構示意圖;圖5是本發明實施例二的軟性電子設備的結構示意圖;
圖6是本發明實施例二的第二導線結構的結構示意圖。
以下結合附圖和具體實施例對本發明提出的軟性電子設備及其製造方法作進一步詳細說明。根據下面說明和請求項,本發明的優點和特徵將更清楚。需說明的是,附圖均採用非常簡化的形式且均使用非精準的比例,僅用以方便、清晰地輔助說明本發明實施例的目的。
請參考圖3,其為本發明實施例的軟性電子設備的結構示意圖。如圖3所示,該軟性電子設備200包括:一軟性基板210以及形成於該軟性基板210上的設備層;該設備層包括相互連接的半導體結構220和第一導線結構230,該第一導線結構230的延伸方向與該半導體結構220的溝道方向一致;該第一導線結構230的延伸方向與該軟性基板210的拉伸方向形成小於90°的夾角。本發明實施例中的半導體結構為薄膜電晶體結構,具體包括閘極、汲極(圖中未示出)、溝道。
具體的,在該軟性電子設備200中,設備層包括相互連接的半導體結構220和第一導線結構230,該半導體結構220具有開關作用,該第一導線結構230與該半導體結構220配套,用以與其他的設備實現電性連接。如圖3所示,該半導體結構220的溝道方向(虛線雙向箭頭所示)與該第一導線結構230的延伸方向相互平行。
同時,該第一導線結構230的延伸方向與該軟性基板
210的邊緣線L的延伸方向既不平行也不垂直,即該第一導線結構230的延伸方向與該軟性基板210的拉伸方向(同該邊緣線L的延伸方向)形成90°以下的夾角。
較佳的,該第一導線結構230的延伸方向與該軟性基板210的拉伸方向所形成的夾角範圍在40°到70°之間,例如,該第一導線結構230的延伸方向與該軟性基板210的拉伸方向形成45°夾角、50°夾角、55°夾角、60°夾角或65°夾角。
請參考圖4,其為本發明實施例的軟性電子設備在受到應力時的結構示意圖。如圖4所示,該軟性電子設備200受力彎曲時,由於該半導體結構220的溝道方向(虛線雙向箭頭所示)和第一導線結構230的延伸方向與該軟性基板210的受力方向(空心箭頭所示)不一致,即該第一導線結構230的延伸方向與該軟性基板210的受力方向存在一夾角。因此,藉由比對圖3和圖4可發現,該半導體結構220和第一導線結構230僅發生θ角的轉動(從對應於圖3的未受應力的原位置l1旋轉到受應力作用而導致的新位置l2)而不發生形變。不發生形變意味著此時該半導體結構220和第一導線結構230所受的應力最小,該軟性電子設備200的電性能以及抗揉性能最佳。
現有的軟性電子設備100中,其半導體結構的溝道方向和導線結構的延伸方向均與其軟性基板的受力方向一致(即形成0°夾角)。而本實施例中,該半導體結構220的溝道方向和第一導線結構230的延伸方向與該軟性基板210的受力方向不一致,形成一定的夾角。
採用相同的應力對現有的軟性電子設備100和本實
施例提供的軟性電子設備200分別進行拉伸實驗,實驗證明與現有的軟性電子設備100相比,本實施例提供的軟性電子設備200所受的最大應力比較小,而且最大應力的分佈區域非常小。
由此可見,本實施例提供的軟性電子設備200中半導體結構220和第一導線結構230所受應力較小,應力作用基本上不會對該軟性電子設備200的電性能和抗揉性能造成影響。因此,與現有的軟性電子設備100相比,該軟性電子設備200具有更佳的電性能以及抗揉性能。
相應的,本實施例還提供了一種軟性電子設備的製造方法。請繼續參考圖3,該軟性電子設備的製造方法包括:步驟一:提供一軟性基板210;步驟二:在該軟性基板210上分別形成半導體結構220和第一導線結構230,該半導體結構220的溝道方向與該第一導線結構230的延伸方向一致,並與該軟性基板210的拉伸方向(即邊緣線L的延伸方向)形成小於90°的夾角。
具體的,首先,提供一軟性基板210,該軟性基板210通常為透明塑膠基板。
接著,在該軟性基板210上分別形成半導體結構220和第一導線結構230。該半導體結構220和第一導線結構230均採用圖案化技藝形成,圖案化技藝製作的半導體薄膜圖形中長邊方向(即溝道方向)和導線薄膜圖形的延伸方向相互平行,且與該軟性基板210的拉伸方向(圖4中空心箭頭所示)形成60°夾角。
至此,形成該軟性電子設備200,該軟性電子設備200的設備層包括半導體結構220和第一導線結構230,該半導體結構
220的溝道方向和第一導線結構230的延伸方向一致,且與該軟性基板210的拉伸方向呈小於90°的夾角。
請參考圖5,其為本發明實施例二的軟性電子設備的結構示意圖。如圖5所示,該軟性電子設備300包括:一軟性基板310以及形成於該軟性基板310上的設備層330;該設備層330包括相互連接的半導體結構(圖中未示出)和第一導線結構(圖中未示出),該第一導線結構的延伸方向與該半導體結構的溝道方向一致;該第一導線結構的延伸方向與該軟性基板310的拉伸方向形成小於90°的夾角。
具體的,在該軟性電子設備300中,設備層330包括多個像素單元30和第一導線結構,該多個像素單元30呈陣列排列,每個像素單元30均具有作為開關作用的半導體結構(圖中未示出),該第一導線結構與該半導體結構配套,用以與其他的設備實現電性連接。該第一導線結構的延伸方向與該半導體結構的溝道方向一致。
該第一導線結構的延伸方向與該軟性基板310的邊緣線既不平行也不垂直,即該第一導線結構的延伸方向與該軟性基板310的拉伸方向既不垂直也不平行,而是具有小於90°的夾角。由此,在該軟性基板310被拉伸時,該第一導線結構和半導體結構受到應力較小,一定角度上該半導體結構和第一導線結構僅發生轉動而不發生形變。
本實施例中,該像素單元30的邊界線圖形為平行四
邊形,該平行四邊形的一條對角線與該軟性基板310的拉伸方向(虛線雙向箭頭所示)一致。
較佳的,該平行四邊形的四條邊與其對角線所形成的夾角範圍在40°~70°之間。本實施例中,該平行四邊形的四條邊與其對角線所形成的夾角均為60°夾角。
該設備層330還包括第二導線結構(圖中未示出),該第二導線結構設置於該軟性基板310的邊緣,且該第二導線結構的延伸方向與該軟性基板310的邊緣線平行。
請結合參考圖5和圖6,該第二導線結構上設置有多個通孔40,該多個通孔40沿著該第二導線結構的延伸方向均勻排列,該通孔40的形狀為平行四邊形,該平行四邊形的對角線與該軟性基板310的拉伸方向(虛線雙向箭頭所示)一致。
由於該第二導線結構的延伸方向必須與該軟性基板310的拉伸方向平行或垂直,在該第二導線結構的延伸方向設置平行四邊形通孔,能夠有效防止外部施加的應力集中到導線上,提高該第二導線結構的抗揉性能。
較佳的,該平行四邊形的四條邊與其對角線所形成的夾角範圍在40°~70°之間。本實施例中,該平行四邊形的四條邊與其對角線所形成的夾角均為60°夾角。
本實施例中,該軟性電子設備300為軟性平板顯示設備。本領域技術人員應該知道,本發明對於該軟性平板顯示設備的類型沒有特別的限制,可以是軟性液晶顯示器(LCD),也可以是軟性有機發光顯示器(OLED)或其他類型的軟性平板顯示設備。
相應的,本實施例還提供一種軟性電子設備的製造方
法。請繼續參考圖3,該軟性電子設備的製造方法包括:步驟一:提供一軟性基板310;步驟二:在該軟性基板310上分別形成多個像素單元30和第一導線結構,該像素單元30具有半導體結構,該半導體結構的溝道方向與該第一導線結構的延伸方向一致,並與該軟性基板310的拉伸方向形成小於90°的夾角。
具體的,首先,提供一軟性基板310,該軟性基板310通常為透明塑膠基板。
接著,在該軟性基板310上分別形成多個呈陣列排列的像素單元30和第一導線結構,該像素單元30具有半導體結構。該半導體結構和第一導線結構230均採用圖案化技藝形成,圖案化技藝製作的半導體薄膜圖形中長邊方向(即溝道方向)和導線薄膜圖形的延伸方向相互平行,且與該軟性基板310的拉伸方向形成60°夾角。
在該軟性基板310上形成設備層的過程中,還包括採用圖案化技藝在該軟性基板310上形成第二導線結構,該第二導線結構設置於該軟性基板的邊緣,該第二導線結構的延伸方向與該軟性基板的邊緣線平行,該第二導線結構上具有多個通孔,該通孔的形狀為平行四邊形,該平行四邊形的對角線與該軟性基板的拉伸方向一致。
至此,形成該軟性電子設備300,該軟性電子設備300的設備層包括半導體結構、第一導線結構和第二導線結構,該半導體結構的溝道方向和第一導線結構的延伸方向一致,且與該軟性基板310的拉伸方向呈小於90°的夾角,該第二導線結構的延伸方向
與該軟性基板310的拉伸方向平行或垂直,該第二導線結構上設置有降低應力影響的平行四邊形通孔。
綜上,在本發明實施例提供的軟性電子設備及其製造方法中,藉由調整半導體結構的溝道方向和第一導線結構的延伸方向,使得該半導體結構和第一導線結構受應力影響最小,從而保證該軟性電子設備的電性能以及抗揉性能。
上述描述僅是對本發明較佳實施例的描述,並非對本發明範圍的任何限定,本發明領域的普通技術人員根據上述揭示內容做的任何變更、修飾,均屬於請求項的保護範圍。
Claims (10)
- 一種軟性電子設備,其包括:一軟性基板以及形成於該軟性基板上的一設備層;該設備層包括相互連接的一半導體結構和一第一導線結構,該半導體結構為一薄膜電晶體結構,該第一導線結構的延伸方向與該薄膜電晶體結構的溝道方向一致;該第一導線結構的延伸方向與該軟性基板的拉伸方向形成小於90°的夾角。
- 如請求項1之軟性電子設備,其中,該第一導線結構的延伸方向與該軟性基板的拉伸方向所形成的夾角範圍在40°~70°之間。
- 如請求項1之軟性電子設備,其中,該設備層還包括一第二導線結構,該第二導線結構設置於該軟性基板的邊緣,且該第二導線結構的延伸方向與該軟性基板的邊緣線平行。
- 如請求項3之軟性電子設備,其中,該第二導線結構上設置有多個通孔,該多個通孔的形狀為一平行四邊形,該平行四邊形具有與該軟性基板的拉伸方向一致的對角線。
- 如請求項1之軟性電子設備,其中,該軟性電子設備為一軟性平板顯示設備,該軟性平板顯示設備具有多個像素單元,該多個像素單元的邊界線圖形為一平行四邊形,該平行四邊形具有與該軟性基板的拉伸方向一致的對角線。
- 如請求項4或5之軟性電子設備,其中,該平行四邊形的四條邊與該平行四邊形的該對角線所形成的夾角範圍在40°~70°之間。
- 如請求項5之軟性電子設備,其中,該軟性電子設備為一軟性液晶顯示器。
- 如請求項5之軟性電子設備,其中,該軟性電子設備為一軟性有機發光顯示器。
- 一種軟性電子設備的製造方法,其包括下列步驟:提供一軟性基板;以及在該軟性基板上分別形成一半導體結構和一第一導線結構,該半導體結構為一薄膜電晶體結構,該薄膜電晶體結構的溝道方向與該第一導線結構的延伸方向一致,並與該軟性基板的拉伸方向形成小於90°的夾角。
- 一種軟性電子設備的製造方法,其包括下列步驟:提供一軟性基板;以及在該軟性基板上分別形成多個像素單元、一第一導線結構和一第二導線結構;其中,該多個像素單元具有一半導體結構,該半導體結構為一薄膜電晶體結構,該薄膜電晶體結構的溝道方向與該第一導線結構的延伸方向一致,並與該軟性基板的拉伸方向形成小於90°的夾角;該第二導線結構設置於該軟性基板的邊緣,該第二導線結構的延伸方向與該軟性基板的邊緣線平行,該第二導線結構上形成有多個通孔,該多個通孔的形狀為一平行四邊形,該平行四邊形的對角線與該軟性基板的拉伸方向一致。
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US11997768B2 (en) | 2014-09-28 | 2024-05-28 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED filament and LED light bulb |
US11686436B2 (en) | 2014-09-28 | 2023-06-27 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED filament and light bulb using LED filament |
US11421827B2 (en) | 2015-06-19 | 2022-08-23 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED filament and LED light bulb |
US11085591B2 (en) | 2014-09-28 | 2021-08-10 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED light bulb with curved filament |
US11525547B2 (en) | 2014-09-28 | 2022-12-13 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED light bulb with curved filament |
US11073248B2 (en) | 2014-09-28 | 2021-07-27 | Zhejiang Super Lighting Electric Appliance Co., Ltd. | LED bulb lamp |
US11543083B2 (en) | 2014-09-28 | 2023-01-03 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED filament and LED light bulb |
US10982048B2 (en) | 2018-04-17 | 2021-04-20 | Jiaxing Super Lighting Electric Appliance Co., Ltd | Organosilicon-modified polyimide resin composition and use thereof |
CN108831308A (zh) * | 2018-06-27 | 2018-11-16 | 上海天马有机发光显示技术有限公司 | 一种可折叠显示面板及可折叠显示装置 |
CN111968518B (zh) * | 2020-08-31 | 2022-03-08 | 上海天马微电子有限公司 | 可拉伸显示面板及其制作方法、可拉伸显示装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1578586A (zh) * | 2003-07-24 | 2005-02-09 | 日本电气株式会社 | 柔性衬底和电子设备 |
CN1901206A (zh) * | 2005-07-20 | 2007-01-24 | 三星Sdi株式会社 | 有机发光显示设备 |
CN105074802A (zh) * | 2013-02-15 | 2015-11-18 | 乐金显示有限公司 | 具有柔性显示器的电子装置 |
US20150357395A1 (en) * | 2014-06-10 | 2015-12-10 | Samsung Display Co., Ltd. | Flexible display device including folding section |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3990389B2 (ja) | 2003-07-24 | 2007-10-10 | Necアクセステクニカ株式会社 | フレキシブル基板および電子装置 |
JP2007073800A (ja) * | 2005-09-08 | 2007-03-22 | Seiko Epson Corp | 半導体装置 |
JP4197716B2 (ja) | 2006-10-03 | 2008-12-17 | 株式会社東芝 | 立体映像表示装置 |
JP5240827B2 (ja) * | 2008-04-15 | 2013-07-17 | Necカシオモバイルコミュニケーションズ株式会社 | フレキシブル配線基板、及び電子機器 |
KR101685019B1 (ko) * | 2011-01-04 | 2016-12-12 | 삼성디스플레이 주식회사 | 유기발광표시장치 |
CN102169960B (zh) * | 2011-03-16 | 2013-03-20 | 华中科技大学 | 一种柔性电子器件薄膜晶体管的制备方法 |
CN102412157B (zh) | 2011-04-29 | 2014-04-30 | 上海华力微电子有限公司 | 用于提高半导体器件性能的附加空置有源区填充方法 |
KR102144432B1 (ko) | 2013-11-06 | 2020-08-13 | 엘지디스플레이 주식회사 | 플렉서블 표시 장치 및 커브드 표시 장치 |
KR102170265B1 (ko) | 2014-04-17 | 2020-10-26 | 삼성디스플레이 주식회사 | 표시 장치 |
CN104091891A (zh) * | 2014-06-03 | 2014-10-08 | 京东方科技集团股份有限公司 | 柔性基板及其制造方法、显示装置 |
JP6474232B2 (ja) * | 2014-11-05 | 2019-02-27 | 株式会社ジャパンディスプレイ | 表示装置 |
US9706607B2 (en) * | 2014-12-10 | 2017-07-11 | Lg Display Co., Ltd. | Flexible display device with multiple types of micro-coating layers |
KR102369368B1 (ko) * | 2015-09-30 | 2022-03-02 | 엘지디스플레이 주식회사 | 영상 처리 회로 및 그를 가지는 표시 장치 |
WO2019064574A1 (ja) * | 2017-09-29 | 2019-04-04 | シャープ株式会社 | 表示デバイス |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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CN1901206A (zh) * | 2005-07-20 | 2007-01-24 | 三星Sdi株式会社 | 有机发光显示设备 |
CN105074802A (zh) * | 2013-02-15 | 2015-11-18 | 乐金显示有限公司 | 具有柔性显示器的电子装置 |
US20150357395A1 (en) * | 2014-06-10 | 2015-12-10 | Samsung Display Co., Ltd. | Flexible display device including folding section |
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CN107204342A (zh) | 2017-09-26 |
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CN107204342B (zh) | 2019-08-23 |
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