CN108873511A - 平面显示面板及其制造方法 - Google Patents

平面显示面板及其制造方法 Download PDF

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Publication number
CN108873511A
CN108873511A CN201810456803.6A CN201810456803A CN108873511A CN 108873511 A CN108873511 A CN 108873511A CN 201810456803 A CN201810456803 A CN 201810456803A CN 108873511 A CN108873511 A CN 108873511A
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hole portion
substrate
film
passivating film
cil
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CN201810456803.6A
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CN108873511B (zh
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曹硕镐
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LG Display Co Ltd
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LG Display Co Ltd
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    • GPHYSICS
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    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
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    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13312Circuits comprising photodetectors for purposes other than feedback
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    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/133345Insulating layers
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    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
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    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
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    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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    • H01L27/1248Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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Abstract

公开了一种平面显示面板及其制造方法,该平面显示面板能够防止相机指示光源(CIL)与环境光传感器孔之间的不同外观。该平面显示面板被配置成使得在被划分成显示区域的像素区以及非显示区域的CIL孔部和环境光传感器孔部的第一基板上,在CIL孔部处或在环境光传感器孔部处不存在栅极绝缘层、第一钝化膜、平坦化膜和第二钝化膜,或者使得在CIL孔部和环境光传感器孔部处仅存在平坦化膜。

Description

平面显示面板及其制造方法
本申请要求于2017年5月15日提交的韩国专利申请第10-2017-0060014号的权益,其通过引用并入本文,如同在此完全阐述一样。
技术领域
本发明涉及一种显示面板,并且更具体地涉及在其中安装有相机、环境光传感器和相机指示光源(camera index light source)的平面显示面板及其制造方法。
背景技术
随着信息社会的到来,近年来用于处理和显示大量信息的显示器领域迅速发展。为了满足由此产生的需求,已经开发并使用了各种平面显示装置。
使用数字数据显示图像的平板显示器的代表性示例包括使用液晶的液晶显示(LCD)面板和使用OLED的有机发光二极管(OLED)显示面板。
液晶显示面板具有大的对比度,适合显示视频,并且具有低的功耗。由于这些原因,液晶显示面板正被用于各种领域,例如膝上型计算机、监视器和电视机。在液晶显示面板中,使用液晶的光学各向异性和偏振特性来实现图像。液晶具有其中液晶的分子结构被拉长并且液晶被排列同时具有方向性的光学各向异性,并且具有其中当液晶被放置在电场中时液晶分子的排列方向根据液晶的尺寸而改变的偏振特性。
液晶显示面板包括:薄膜晶体管阵列基板,其具有形成在玻璃基板上的薄膜晶体管阵列;滤色器阵列基板,其具有形成在玻璃基板上的滤色器阵列;以及液晶层,其布置在薄膜晶体管阵列基板与滤色器阵列基板之间。电压被施加至电场产生电极以在液晶层中产生电场,由此液晶层中的液晶分子排列的方向被设置,并且入射光的偏振被控制以显示图像。
OLED显示面板不需要额外的光源,因为OLED显示面板是自发光的。在OLED显示面板中,通过在其上形成有薄膜晶体管和有机发光器件的显示基板来显示图像。
近年来,平面显示面板已经被积极应用于个人便携式电子设备,例如移动电话和个人数字助理(PDA)以及电视机和监视器。在平面显示面板中安装有相机以实现相机电话和视频电话的功能。此外,在平面显示面板中安装有环境光传感器以感测平面显示面板周围的光的强度,其被用作自动调整显示面板的屏幕的亮度所需的数据。
图1是示意性地示出安装有普通相机和环境光传感器的液晶显示面板的平面图,图2是示出图1的第一基板的结构的截面图。
如图1所示,普通液晶显示面板110被配置成使得作为薄膜晶体管阵列基板的第一基板112和作为滤色器阵列基板的第二基板114以在第一基板112与第二基板114之间插入液晶层(未示出)的状态层叠。
液晶显示面板110通常包括在其上显示图像的显示区域AA和在其上形成各种电路和配线并且因此不用于显示图像的非显示区域NA。在第一基板112的显示区域AA上,多条数据线DL和多条栅极线GL纵向地和横向地彼此交叉以限定像素P。在每条数据线DL与栅极线GL中的对应栅极线的交叉处设置有薄膜晶体管T,以使薄膜晶体管T分别连接至设置在每个像素P处的透明像素电极(未示出)。
为了防止布置在两个基板112与114之间的液晶层(未示出)的泄漏,沿着基板112和114的非显示区域NA的边缘形成密封图案210。
在第一基板112的非显示区域NA的一侧处形成有数据焊盘单元250,并且在第一基板112的非显示区域NA的垂直于第一基板112的非显示区域NA的形成有数据焊盘单元250的一侧的边缘处形成有栅极驱动单元240。
数据焊盘单元250包括多个数据焊盘电极(未示出)。数据焊盘电极(未示出)通过带式自动接合(TAB)连接至连接构件116,连接构件116的每个上安装有数据驱动电路260。
安装在各个连接构件116上的数据驱动电路260经由安装在连接至连接构件116的数据印刷电路板(PCB)117上的信号线(未示出)接收从外部驱动电路单元(未示出)输入的控制信号和图像信号。另外,数据驱动电路260彼此连接。
栅极驱动单元240使用从外部驱动电路单元(未示出)接收的栅极控制信号来依次生成用于接通薄膜晶体管的栅极信号,并且将栅极信号提供至栅极线GL。
因此,根据针对每个像素P提供的数据信号,通过在像素电极(未示出)与公共电极(未示出)之间产生的电场来控制液晶层(未示出)的光学透射率,由此显示图像。
在液晶面板110的不显示图像的非显示区域NA中设置有相机孔230、相机指示光源(CIL)孔231和环境光传感器孔232。
在图2中示出了其中安装有相机和环境光传感器的液晶显示面板的第一基板112的结构。
即,图2是示出显示区域AA的像素区像素、CIL孔部231和环境光传感器孔部232的截面图。
在第一基板112的像素区像素中形成有具有栅电极11、栅极绝缘层12、有源层13以及源电极14a/漏电极14b的薄膜晶体管TFT。在包括薄膜晶体管TFT的第一基板112的整个表面上依次堆叠有第一钝化膜15、平坦化膜16和第二钝化膜17。
在漏电极14b上方的第二钝化膜17、平坦化膜16和第一钝化膜15被选择性地去除以形成接触孔20,并且形成有像素电极18以使像素电极18经由接触孔20电连接至漏电极14b。
在液晶显示面板110处于IPS模式的情况下,在第二钝化膜17与平坦化膜16之间形成有公共电极23。
同时,CIL孔部231具有其中栅极绝缘层12、第一钝化膜15、平坦化膜16和第二钝化膜17依次堆叠在第一基板112上的结构。
环境光传感器孔部232具有其中栅极绝缘层12、第一钝化膜15和第二钝化膜17依次堆叠在第一基板112上并且其中在第二钝化膜17上设置有聚合物膜21的结构。
具有其中安装有普通相机和环境光传感器的上述结构的液晶显示面板具有以下问题。
如上所述,CIL孔部231具有其中栅极绝缘层12、第一钝化膜15、平坦化膜16和第二钝化膜17依次堆叠在第一基板112上的结构,并且环境光传感器孔部232具有其中栅极绝缘层12、第一钝化膜15和第二钝化膜17依次堆叠在第一基板112上并且其中在第二钝化膜17上设置有聚合物膜21的结构。因此,当在正常亮度条件下关断相机灯时,在CIL孔与环境光传感器孔之间以侧视角观察到的外观不同。
即,CIL孔与环境光传感器孔之间的区比CIL孔区或环境光传感器孔区显得更亮。
发明内容
因此,本发明涉及一种平面显示面板及其制造方法,其基本上消除了由于相关技术的限制和缺点而导致的一个或更多个问题。
本发明的目的是提供一种平面显示面板及其制造方法,该平面显示面板被配置成使得CIL孔和环境光传感器孔具有相同的截面结构,以防止CIL孔与环境光传感器孔之间的不同外观。
本发明的其他优点、目的和特征将部分地在下面的描述中阐述,并且对于本领域普通技术人员而言在研究以下内容时将部分地变得明显,或者可以从本发明的实践中获知。本发明的目的和其他优点可以通过书面说明书及其权利要求以及附图中特别指出的结构来实现和获得。
为了实现这些目的和其他优点,并根据本发明的目的,如在本文中实施和广泛描述的,平面显示面板被配置成使得在划分成显示区域的像素区以及非显示区域的CIL孔部和环境光传感器孔部的第一基板上,在CIL孔部处或在环境光传感器孔部处不存在栅极绝缘层、第一钝化膜、平坦化膜和第二钝化膜。
在本发明的另一方面中,平面显示面板被配置成使得在被划分成显示区域的像素区以及非显示区域的CIL孔部和环境光传感器孔部的第一基板上,在CIL孔部和环境光传感器孔部处仅存在平坦化膜。
在本发明的另一方面中,一种制造平面显示面板的方法包括:制备第一基板,第一基板被划分成显示区域的像素区以及非显示区域的CIL孔部和环境光传感器孔部;在像素区处的第一基板上形成栅电极;在包括像素区、CIL孔部和环境光传感器孔部的第一基板的整个表面上形成栅极绝缘层;在像素区处的栅极绝缘层上形成有源层和源电极/漏电极;在包括像素区、CIL孔部和环境光传感器孔部的第一基板的整个表面上依次形成第一钝化膜和平坦化膜;选择性地去除漏电极、CIL孔部和环境光传感器孔部上方的平坦化膜;在包括像素区、CIL孔部和环境光传感器孔部的第一基板的整个表面上形成第二钝化膜;去除漏电极、CIL孔部和环境光传感器孔部上方的第一钝化膜和第二钝化膜;以及在像素区处的第二钝化膜上形成像素电极以使该像素电极电连接至漏电极。
在本发明的另一方面中,一种制造平面显示面板的方法包括:制备第一基板,第一基板被划分成显示区域的像素区以及非显示区域的CIL孔部和环境光传感器孔部;在像素区处的第一基板上形成栅电极;在包括像素区、CIL孔部和环境光传感器孔部的第一基板的整个表面上形成栅极绝缘层;在像素区处的栅极绝缘层上形成有源层和源电极/漏电极;在包括像素区、CIL孔部和环境光传感器孔部的第一基板的整个表面上形成第一钝化膜;选择性地去除CIL孔部和环境光传感器孔部上方的栅极绝缘层和第一钝化膜;在第一基板的整个表面上形成平坦化膜;选择性地去除漏电极上方的平坦化膜;在包括像素区、CIL孔部和环境光传感器孔部的第一基板的整个表面上形成第二钝化膜;去除漏电极上方的第一钝化膜和第二钝化膜;去除CIL孔部和环境光传感器孔部上方的第二钝化膜;以及在像素区处的第二钝化膜上形成像素电极,以使该像素电极电连接至漏电极。
应该理解,本发明的上述一般性描述和下面的详细描述都是示例性和说明性的,并且旨在提供对所要求保护的本发明的进一步解释。
附图说明
本发明包括附图以提供对本发明的进一步理解并且附图并入并构成本申请的一部分,附图示出了本发明的实施方式并且与说明书一起用于解释本发明的原理。在附图中:
图1是示意性地示出其中安装有普通相机和环境光传感器的液晶显示面板的平面图;
图2是示出图1的第一基板的结构的截面图;
图3是示出根据本发明第一实施方式的其中安装有相机指示光源和环境光传感器的液晶显示面板的第一基板的结构的截面图;
图4A至图4F是示出制造根据本发明第一实施方式的其中安装有相机指示光源和环境光传感器的液晶显示面板的过程的截面图;以及
图5是示出根据本发明第二实施方式的其中安装有相机指示光源和环境光传感器的液晶显示面板的第一基板的结构的截面图。
具体实施方式
在下文中,将参照附图详细描述根据本发明的平面显示面板及其制造方法。
根据本发明的液晶显示面板110与图1所示的液晶显示面板相同。但是第一基板112在CIL孔区231和环境光传感器孔区处的结构与一般结构不同。
即,根据本发明的液晶显示面板被配置成使得作为薄膜晶体管阵列基板的第一基板和作为滤色器阵列基板的第二基板以在第一基板与第二基板之间插入有液晶层的状态层叠。
液晶显示面板通常包括在其上显示图像的显示区域和在其上形成各种电路和配线并且因此不用于显示图像的非显示区域。
在第一基板的显示区域上,多条数据线和多条栅极线纵向地和横向地彼此交叉以限定像素。在每条数据线与栅极线中的对应栅极线的交叉处设置有薄膜晶体管,以使薄膜晶体管分别连接至设置在每个像素处的像素电极。
在第一基板的非显示区域中设置有相机孔、相机指示光源(CIL)孔和环境光传感器孔。
因此,将详细描述显示区域AA的像素区像素以及非显示区域NA的CIL孔部和环境光传感器孔部的截面结构,并且将省略液晶显示面板的其余部分的描述,这是因为液晶显示面板的其余部分与图1所示的液晶显示面板的那些部分相同。
图3是示出根据本发明第一实施方式的其中安装有相机指示光源和环境光传感器的液晶显示面板的第一基板的结构的截面图。
在根据本发明第一实施方式的液晶显示面板中,在第一基板112的像素区像素中形成有具有栅电极11、栅极绝缘层12、有源层13以及源电极14a/漏电极14b的薄膜晶体管TFT。在包括薄膜晶体管TFT的第一基板112的整个表面上依次堆叠有第一钝化膜15和平坦化膜16。
在平坦化膜16上形成有公共电极23和公共线24。在包括公共电极23和公共线24的基板的整个表面上形成有第二钝化膜17。漏电极14b上方的第二钝化膜17、平坦化膜16和第一钝化膜15被选择性地去除以形成接触孔20,并且在第二钝化膜17上形成有像素电极18以使像素电极18经由接触孔20电连接至漏极电极14b。
像素电极18在公共电极23上方具有狭缝(slit)结构。因此,在像素电极18与公共电极23之间发生面内切换(in-plane switching)以驱动液晶层。
在第一基板112上的CIL孔部CIL处或者环境光传感器孔部ALS处不形成栅极绝缘层12、第一钝化膜15、平坦化膜16和第二钝化膜17。
在下文中,将描述制造根据本发明第一实施方式的具有其中安装有相机指示光源和环境光传感器的上述结构的液晶显示面板的方法。
图4A至4F是示出制造根据本发明第一实施方式的其中安装有相机指示光源和环境光传感器的液晶显示面板的过程的截面图。
首先,将如上所述分别描述液晶显示面板的显示区域AA的像素区像素以及液晶显示面板的非显示区域NA的CIL孔部CIL和环境光传感器孔部ALS。
如图4A所示,在第一基板112上沉积金属层,并且通过光刻和蚀刻选择性地去除金属层,以在显示区域上形成栅电极11和栅极线GL(参见图1)。
这里,可以使用任何低电阻金属层作为金属层。金属层可以形成为具有单个金属层或堆叠的多个金属层。例如,可以堆叠MoTi层和铜(Cu)层。
在包括栅电极11的基板的整个表面上形成栅极绝缘层12。例如,可以使用SiNx层作为栅极绝缘层12。
即,栅电极11和栅极绝缘层12形成在显示区域的像素区处的第一基板112上,并且仅栅极绝缘层12形成在非显示区域NA的CIL孔部CIL和环境光传感器孔部ALS处的第一基板112上。
如图4B所示,在栅极绝缘层12上沉积半导体层,并且通过光刻和蚀刻选择性地去除半导体层,以在栅电极11上方形成有源层13。
虽然未示出,但是还可以在半导体层上沉积掺杂有掺杂剂的半导体层,并且可以通过光刻和蚀刻选择性地去除半导体层和掺杂有掺杂剂的半导体层来形成有源层13。
随后,在包括有源层13的基板的整个表面上沉积金属层,并且通过光刻和蚀刻选择性地去除金属层,以在显示区域上形成数据线DL(参见图1)和源电极14a/漏电极14b。因此,由栅电极11、有源层13和源电极14a/漏电极14b形成薄膜晶体管。
这里,可以使用任何低电阻金属层作为金属层。金属层可以形成为具有单个金属层或堆叠的多个金属层。例如,可以堆叠MoTi层和铜(Cu)层。
在还已经形成掺杂有掺杂剂的半导体层的情况下,如上所述,当形成源电极14a/漏电极14b时,掺杂有掺杂剂的半导体层的对应于源电极14a与漏电极14b之间的沟道区的部分被去除。
如图4C所示,在包括薄膜晶体管的第一基板112的整个表面上依次形成第一钝化膜15和平坦化膜16。
随后,通过光刻和蚀刻选择性地去除漏电极14b、CIL孔部CIL和环境光传感器孔部ALS上方的平坦化膜16。
如图4D所示,在平坦化膜16上沉积透明导电层和金属层,并且通过使用半色调掩模(HTM)的光刻和蚀刻来选择性地去除透明导电层和金属层以形成公共电极23和公共线24。
这里,半色调掩模(HTM)被配置成阻挡在对应于公共线24的部分处的光,使在对应于公共电极23的部分处的光半透射,以及使在其余部分处的光全透射。
因此,虽然未示出,但是当在平坦化膜16上依次沉积透明导电层、金属层和光敏膜然后使用半色调掩模(HTM)执行曝光和显影时,除了对应于公共线24和公共电极23的部分之外的其余部分被去除,并且光敏膜被图案化,使得对应于公共线24的部分比对应于公共电极23的部分厚。
首先使用图案化的光敏膜作为掩模来去除透明导电层和金属层以形成公共电极23。将图案化的光敏膜灰化,使得对应于公共电极23的部分被去除,并且对应于公共线24的部分被留下。
如图4D所示,使用灰化的光敏膜作为掩模去除金属层以形成公共线24。此时,在CIL孔部CIL处或环境光传感器孔部ALS处不形成公共线24和公共电极23。
如图4E所示,在包括公共线24和公共电极23的基板的整个表面上形成第二钝化膜17,并且通过光刻和蚀刻选择性地去除漏电极14b、CIL孔部CIL和环境光传感器孔部ALS上方的第一钝化膜15和第二钝化膜17。
如图4F所示,在基板的整个表面上沉积透明导电膜,并且通过光刻和蚀刻选择性地去除透明导电膜,以在每个像素区处形成像素电极18。
此时,像素电极18电连接至漏电极14b,并且在公共电极23上方具有狭缝结构。因此,在像素电极18与公共电极23之间发生面内切换以驱动液晶层。
此时,在CIL孔部CIL或环境光传感器孔部ALS处不形成像素电极18。此外,在CIL孔部CIL或环境光传感器孔部ALS处不形成栅极绝缘层12、第一钝化膜15、平坦化膜16和第二钝化膜17。
如上所述,已经通过示例的方式基于液晶显示面板描述了根据本发明的平面显示面板及其制造方法。然而,本发明不限于此。甚至OLED显示面板可以被配置成使得在非显示区域的CIL孔部CIL处或在环境光传感器孔部ALS处不形成栅极绝缘层、第一钝化膜、平坦化膜和第二钝化膜。
图5是示出根据本发明第二实施方式的其中安装有相机指示光源和环境光传感器的液晶显示面板的第一基板的结构的截面图。
在根据本发明第二实施方式的液晶显示面板中,除了平坦化膜之外,在CIL孔部CIL处或环境光传感器孔部ALS处不形成栅极绝缘层、第一钝化膜和第二钝化膜。甚至当仅形成平坦化膜时也可以获得相同的效果。
制造根据本发明第二实施方式的平面显示面板的方法类似于图4A至图4F中所示的方法;然而,在图4C和图4E中存在细微的差别。
即,在图4C中,在第一基板112的整个表面上沉积第一钝化膜15之后并且在沉积平坦化膜16之前,使用附加掩模去除CIL孔部CIL和环境光传感器孔部ALS处的栅极绝缘层12和第一钝化膜15。
另外,当沉积平坦化膜16并且选择性地去除漏电极14b上方的平坦化膜16时,CIL孔部CIL和环境光传感器孔部ALS处的平坦化膜16不被去除。
另外,如图4E所示,在基板的整个表面上形成第二钝化膜17,选择性地去除漏电极14b上方的栅极绝缘层12和第二钝化膜17,并且选择性地去除CIL孔部CIL和环境光传感器孔部ALS上方的第二钝化膜17。
通过上述过程,仅平坦化膜16可以留在CIL孔部CIL和环境光传感器孔部ALS处,并且在CIL孔部CIL和环境光传感器孔部ALS处可以去除栅极绝缘层12、第一钝化膜15和第二钝化膜17。
从以上描述中明显的是,根据本发明的平面显示面板及其制造方法具有以下效果。
在CIL孔部CIL处或环境光传感器孔部ALS处不形成栅极绝缘层、第一钝化膜、平坦化膜和第二钝化膜,或者在CIL孔部CIL和环境光传感器孔部ALS处仅形成平坦化膜。因此,当在正常亮度条件下关断相机灯时,CIL孔与环境光传感器孔之间的侧视角下的外观没有差异,由此显示面板的质量得到改善。
对本领域技术人员来说明显的是,在不脱离本发明的精神或范围的情况下,可以在本发明中进行各种修改和变化。因此,本发明旨在涵盖落入所附权利要求及其等同物的范围内的本发明的修改和变化。

Claims (8)

1.一种平面显示面板,包括:
第一基板,所述第一基板被划分成显示区域的像素区以及非显示区域的相机指示光源CIL孔部和环境光传感器孔部;
薄膜晶体管,所述薄膜晶体管具有形成在所述第一基板的像素区上的栅电极、栅极绝缘层、有源层以及源电极/漏电极;
第一钝化膜和平坦化膜,所述第一钝化膜和所述平坦化膜依次堆叠在包括所述薄膜晶体管的所述第一基板的整个表面上;
第二钝化膜,所述第二钝化膜形成在所述第一基板的整个表面上;以及
像素电极,所述像素电极形成在所述像素区处的所述第二钝化膜上,以经由通过选择性地去除所述漏电极上方的所述第二钝化膜、所述平坦化膜和所述第一钝化膜形成的接触孔而电连接至所述漏电极;
其中,在所述CIL孔部处或在所述环境光传感器孔部处的所述第一基板上的所述栅极绝缘层、所述第一钝化膜、所述平坦化膜和所述第二钝化膜被去除。
2.根据权利要求1所述的平面显示面板,还包括在所述平坦化膜与所述第二钝化膜之间的像素区处形成的公共电极和公共线。
3.一种平面显示面板,包括:
第一基板,所述第一基板被划分成显示区域的像素区以及非显示区域的相机指示光源CIL孔部和环境光传感器孔部;
薄膜晶体管,所述薄膜晶体管具有形成在所述第一基板的像素区上的栅电极、栅极绝缘层、有源层以及源电极/漏电极;
第一钝化膜和平坦化膜,所述第一钝化膜和所述平坦化膜依次堆叠在包括所述薄膜晶体管的所述第一基板的整个表面上;
第二钝化膜,所述第二钝化膜形成在所述第一基板的整个表面上;以及
像素电极,所述像素电极形成在所述像素区处的所述第二钝化膜上,以经由通过选择性地去除所述漏电极上方的所述第二钝化膜、所述平坦化膜和所述第一钝化膜形成的接触孔而电连接至所述漏电极;
其中,在所述CIL孔部和所述环境光传感器孔部处的所述第一基板上仅存在所述平坦化膜。
4.根据权利要求3所述的平面显示面板,还包括在所述平坦化膜与所述第二钝化膜之间的像素区处形成的公共电极和公共线。
5.一种制造平面显示面板的方法,包括:
制备第一基板,所述第一基板被划分成显示区域的像素区以及非显示区域的相机指示光源CIL孔部和环境光传感器孔部;
在所述像素区处的所述第一基板上形成栅电极;
在包括所述像素区、所述CIL孔部和所述环境光传感器孔部的所述第一基板的整个表面上形成栅极绝缘层;
在所述像素区处的所述栅极绝缘层上形成有源层和源电极/漏电极;
在包括所述像素区、所述CIL孔部和所述环境光传感器孔部的所述第一基板的整个表面上依次形成第一钝化膜和平坦化膜;
选择性地去除所述漏电极、所述CIL孔部和所述环境光传感器孔部上方的所述平坦化膜;
在包括所述像素区、所述CIL孔部和所述环境光传感器孔部的所述第一基板的整个表面上形成第二钝化膜,并且去除所述漏电极、所述CIL孔部和所述环境光传感器孔部上方的所述第一钝化膜和所述第二钝化膜;以及
在所述像素区处的所述第二钝化膜上形成像素电极以使所述像素电极电连接至所述漏电极。
6.根据权利要求5所述的方法,还包括在所述平坦化膜与所述第二钝化膜之间的像素区处形成公共电极和公共线。
7.一种制造平面显示面板的方法,包括:
制备第一基板,所述第一基板被划分成显示区域的像素区以及非显示区域的相机指示光源CIL孔部和环境光传感器孔部;
在所述像素区处的所述第一基板上形成栅电极;
在包括所述像素区、所述CIL孔部和所述环境光传感器孔部的所述第一基板的整个表面上形成栅极绝缘层;
在所述像素区处的所述栅极绝缘层上形成有源层和源电极/漏电极;
在包括所述像素区、所述CIL孔部和所述环境光传感器孔部的所述第一基板的整个表面上形成第一钝化膜;
选择性地去除所述CIL孔部和所述环境光传感器孔部上方的所述栅极绝缘层和所述第一钝化膜;
在所述第一基板的整个表面上形成平坦化膜;
选择性地去除所述漏电极上方的所述平坦化膜;
在包括所述像素区、所述CIL孔部和所述环境光传感器孔部的所述第一基板的整个表面上形成第二钝化膜;
去除所述漏电极上方的所述第一钝化膜和所述第二钝化膜,并且去除所述CIL孔部和所述环境光传感器孔部上方的所述第二钝化膜;以及
在所述像素区处的所述第二钝化膜上形成像素电极以使所述像素电极电连接至所述漏电极。
8.根据权利要求7所述的方法,还包括在所述平坦化膜与所述第二钝化膜之间的像素区处形成公共电极和公共线。
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