TWI646628B - Electrostatic chuck - Google Patents
Electrostatic chuck Download PDFInfo
- Publication number
- TWI646628B TWI646628B TW105138773A TW105138773A TWI646628B TW I646628 B TWI646628 B TW I646628B TW 105138773 A TW105138773 A TW 105138773A TW 105138773 A TW105138773 A TW 105138773A TW I646628 B TWI646628 B TW I646628B
- Authority
- TW
- Taiwan
- Prior art keywords
- heater
- cavity
- layer
- ceramic plate
- electrostatic chuck
- Prior art date
Links
- 239000000919 ceramic Substances 0.000 claims abstract description 171
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000003507 refrigerant Substances 0.000 claims abstract description 27
- 230000000149 penetrating effect Effects 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 129
- 239000007789 gas Substances 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 15
- 230000002093 peripheral effect Effects 0.000 description 9
- 238000001179 sorption measurement Methods 0.000 description 9
- 239000012790 adhesive layer Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000003252 repetitive effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/4807—Ceramic parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Resistance Heating (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015234707A JP6530701B2 (ja) | 2015-12-01 | 2015-12-01 | 静電チャック |
JP2015-234707 | 2015-12-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201727816A TW201727816A (zh) | 2017-08-01 |
TWI646628B true TWI646628B (zh) | 2019-01-01 |
Family
ID=59017572
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105138773A TWI646628B (zh) | 2015-12-01 | 2016-11-25 | Electrostatic chuck |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6530701B2 (ja) |
KR (1) | KR101994516B1 (ja) |
TW (1) | TWI646628B (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6489195B1 (ja) * | 2017-11-15 | 2019-03-27 | 住友大阪セメント株式会社 | 静電チャック装置 |
US11961747B2 (en) | 2018-03-28 | 2024-04-16 | Kyocera Corporation | Heater and heater system |
JP7025278B2 (ja) * | 2018-05-01 | 2022-02-24 | 日本特殊陶業株式会社 | セラミックスヒータ |
CN111052343B (zh) * | 2018-07-04 | 2023-10-03 | 日本碍子株式会社 | 晶圆支撑台 |
KR20230133408A (ko) * | 2018-10-11 | 2023-09-19 | 닛폰 하츠죠 가부시키가이샤 | 스테이지, 성막 장치 및 막 가공 장치 |
JP2020064841A (ja) * | 2018-10-11 | 2020-04-23 | 日本発條株式会社 | ステージ、成膜装置、および膜加工装置 |
US20220181127A1 (en) * | 2019-05-07 | 2022-06-09 | Lam Research Corporation | Electrostatic chuck system |
JP7411383B2 (ja) * | 2019-11-05 | 2024-01-11 | 日本特殊陶業株式会社 | 加熱装置 |
JP7261151B2 (ja) * | 2019-12-09 | 2023-04-19 | 京セラ株式会社 | 試料保持具 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060221539A1 (en) * | 2005-03-31 | 2006-10-05 | Ngk Spark Plug Co., Ltd. | Electrostatic chuck |
US20090159566A1 (en) * | 2007-12-21 | 2009-06-25 | Applied Materials, Inc. | Method and apparatus for controlling temperature of a substrate |
US20140334060A1 (en) * | 2013-05-07 | 2014-11-13 | Applied Materials, Inc. | Electrostatic chuck having thermally isolated zones with minimal crosstalk |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040070008A (ko) * | 2003-01-29 | 2004-08-06 | 쿄세라 코포레이션 | 정전척 |
JP4819549B2 (ja) * | 2005-03-31 | 2011-11-24 | 日本特殊陶業株式会社 | 静電チャック |
JP5554525B2 (ja) | 2009-08-25 | 2014-07-23 | 日本特殊陶業株式会社 | 静電チャック |
JP3157070U (ja) * | 2009-11-12 | 2010-01-28 | 日本碍子株式会社 | セラミックスヒーター |
JP6077258B2 (ja) | 2012-10-05 | 2017-02-08 | 日本特殊陶業株式会社 | 積層発熱体、静電チャック、及びセラミックヒータ |
JP3182120U (ja) | 2012-12-26 | 2013-03-07 | 日本碍子株式会社 | セラミックヒーター |
JP6080571B2 (ja) | 2013-01-31 | 2017-02-15 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
JP6239894B2 (ja) * | 2013-08-07 | 2017-11-29 | 日本特殊陶業株式会社 | 静電チャック |
US11158526B2 (en) * | 2014-02-07 | 2021-10-26 | Applied Materials, Inc. | Temperature controlled substrate support assembly |
-
2015
- 2015-12-01 JP JP2015234707A patent/JP6530701B2/ja active Active
-
2016
- 2016-11-24 KR KR1020160157588A patent/KR101994516B1/ko active IP Right Grant
- 2016-11-25 TW TW105138773A patent/TWI646628B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060221539A1 (en) * | 2005-03-31 | 2006-10-05 | Ngk Spark Plug Co., Ltd. | Electrostatic chuck |
US20090159566A1 (en) * | 2007-12-21 | 2009-06-25 | Applied Materials, Inc. | Method and apparatus for controlling temperature of a substrate |
US20140334060A1 (en) * | 2013-05-07 | 2014-11-13 | Applied Materials, Inc. | Electrostatic chuck having thermally isolated zones with minimal crosstalk |
Also Published As
Publication number | Publication date |
---|---|
KR20170064469A (ko) | 2017-06-09 |
TW201727816A (zh) | 2017-08-01 |
JP2017103325A (ja) | 2017-06-08 |
JP6530701B2 (ja) | 2019-06-12 |
KR101994516B1 (ko) | 2019-06-28 |
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