TWI635628B - 處理半導體結構之方法 - Google Patents

處理半導體結構之方法 Download PDF

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Publication number
TWI635628B
TWI635628B TW106103469A TW106103469A TWI635628B TW I635628 B TWI635628 B TW I635628B TW 106103469 A TW106103469 A TW 106103469A TW 106103469 A TW106103469 A TW 106103469A TW I635628 B TWI635628 B TW I635628B
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TW
Taiwan
Prior art keywords
wafer
substrate
bonding
light
type region
Prior art date
Application number
TW106103469A
Other languages
English (en)
Chinese (zh)
Other versions
TW201717436A (zh
Inventor
荃朵拉 海特傑若米
Jerome Chandra Bhat
亞歷山卓 史帝格沃丹尼爾
Daniel Alexander Steigerwald
大衛 坎拉斯麥可
Michael David Camras
趙漢何
Han Ho Choi
法蘭德里克 賈諾納坦
Nathan Fredrick Gardner
波里索維奇 喬利金歐樂
Oleg Borisovich Shchekin
Original Assignee
皇家飛利浦電子股份有限公司
Koninklijke Philips Electronics N.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 皇家飛利浦電子股份有限公司, Koninklijke Philips Electronics N.V. filed Critical 皇家飛利浦電子股份有限公司
Publication of TW201717436A publication Critical patent/TW201717436A/zh
Application granted granted Critical
Publication of TWI635628B publication Critical patent/TWI635628B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Laser Beam Processing (AREA)
  • Optical Filters (AREA)
TW106103469A 2011-08-26 2012-08-24 處理半導體結構之方法 TWI635628B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161527634P 2011-08-26 2011-08-26
US61/527,634 2011-08-26

Publications (2)

Publication Number Publication Date
TW201717436A TW201717436A (zh) 2017-05-16
TWI635628B true TWI635628B (zh) 2018-09-11

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
TW106103469A TWI635628B (zh) 2011-08-26 2012-08-24 處理半導體結構之方法
TW101130877A TWI583029B (zh) 2011-08-26 2012-08-24 處理半導體結構之方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW101130877A TWI583029B (zh) 2011-08-26 2012-08-24 處理半導體結構之方法

Country Status (7)

Country Link
US (1) US10056531B2 (https=)
EP (1) EP2748864B1 (https=)
JP (2) JP6305337B2 (https=)
KR (2) KR102082499B1 (https=)
CN (1) CN103748696B (https=)
TW (2) TWI635628B (https=)
WO (1) WO2013030718A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103650171B (zh) 2011-07-15 2018-09-18 亮锐控股有限公司 将半导体装置结合到支持衬底的方法
US9257617B2 (en) * 2012-02-10 2016-02-09 Koninklijke Philips N.V. Wavelength converted light emitting device
JP6782231B2 (ja) * 2014-10-01 2020-11-11 ルミレッズ ホールディング ベーフェー 放射スペクトルが調整可能な光源
US10217914B2 (en) 2015-05-27 2019-02-26 Samsung Electronics Co., Ltd. Semiconductor light emitting device
JP2017220479A (ja) * 2016-06-03 2017-12-14 株式会社ディスコ 発光ダイオードチップの製造方法
JP2017224728A (ja) * 2016-06-15 2017-12-21 株式会社ディスコ 発光ダイオードチップの製造方法
JP2017224726A (ja) * 2016-06-15 2017-12-21 株式会社ディスコ 発光ダイオードチップの製造方法
JP2018014425A (ja) * 2016-07-21 2018-01-25 株式会社ディスコ 発光ダイオードチップの製造方法
TWI759289B (zh) * 2017-03-21 2022-04-01 晶元光電股份有限公司 發光元件
US10559727B2 (en) * 2017-07-25 2020-02-11 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Manufacturing method of colorful Micro-LED, display modlue and terminals
CN109461805B (zh) * 2018-03-07 2021-08-10 普瑞光电股份有限公司 具有位于包含荧光体的玻璃转换板上的玻璃透镜的汽车led光源
US11348906B2 (en) 2018-03-21 2022-05-31 Osram Opto Semiconductors Gmbh Optoelectronic device comprising a phosphor plate and method of manufacturing the optoelectronic device
CN110544641A (zh) * 2018-05-28 2019-12-06 山东浪潮华光光电子股份有限公司 一种发光二极管芯片的测试方法
JP2019212875A (ja) * 2018-06-08 2019-12-12 信越半導体株式会社 発光素子及び発光素子の製造方法
JP7108196B2 (ja) 2019-12-26 2022-07-28 日亜化学工業株式会社 発光装置、波長変換部材の製造方法及び発光装置の製造方法
KR20210123064A (ko) * 2020-04-02 2021-10-13 웨이브로드 주식회사 3족 질화물 반도체 소자를 제조하는 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201125161A (en) * 2009-11-23 2011-07-16 Koninkl Philips Electronics Nv III-V light emitting device with thin n-type region

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3230638B2 (ja) * 1993-02-10 2001-11-19 シャープ株式会社 発光ダイオードの製造方法
JP2002344029A (ja) 2001-05-17 2002-11-29 Rohm Co Ltd 発光ダイオードの色調調整方法
TWI231054B (en) * 2003-03-13 2005-04-11 Showa Denko Kk Light-emitting diode and its manufacturing method
KR101127314B1 (ko) 2003-11-19 2012-03-29 니치아 카가쿠 고교 가부시키가이샤 반도체소자
JP4594708B2 (ja) * 2003-12-05 2010-12-08 昭和電工株式会社 発光ダイオードおよびその製造方法、発光ダイオードランプ。
JP2005259912A (ja) 2004-03-10 2005-09-22 Shin Etsu Handotai Co Ltd 発光素子の製造方法
WO2005091390A1 (en) * 2004-03-18 2005-09-29 Showa Denko K.K. Group iii nitride semiconductor light-emitting device and producing method thereof
JP4116587B2 (ja) * 2004-04-13 2008-07-09 浜松ホトニクス株式会社 半導体発光素子及びその製造方法
JP4857596B2 (ja) * 2004-06-24 2012-01-18 豊田合成株式会社 発光素子の製造方法
US7560294B2 (en) 2004-06-07 2009-07-14 Toyoda Gosei Co., Ltd. Light emitting element and method of making same
US7553683B2 (en) 2004-06-09 2009-06-30 Philips Lumiled Lighting Co., Llc Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices
JP4753628B2 (ja) * 2004-06-11 2011-08-24 昭和電工株式会社 化合物半導体素子ウェハーの製造方法
JP4692059B2 (ja) * 2005-04-25 2011-06-01 パナソニック電工株式会社 発光装置の製造方法
JP4895541B2 (ja) * 2005-07-08 2012-03-14 シャープ株式会社 波長変換部材、発光装置及び波長変換部材の製造方法
US7456080B2 (en) * 2005-12-19 2008-11-25 Corning Incorporated Semiconductor on glass insulator made using improved ion implantation process
JP2008135697A (ja) 2006-10-23 2008-06-12 Rohm Co Ltd 半導体発光素子
US7521862B2 (en) 2006-11-20 2009-04-21 Philips Lumileds Lighting Co., Llc Light emitting device including luminescent ceramic and light-scattering material
JP2008159628A (ja) * 2006-12-20 2008-07-10 Rohm Co Ltd 半導体発光素子及び半導体発光素子の製造方法
US7989236B2 (en) * 2007-12-27 2011-08-02 Toyoda Gosei Co., Ltd. Method of making phosphor containing glass plate, method of making light emitting device
US8877524B2 (en) * 2008-03-31 2014-11-04 Cree, Inc. Emission tuning methods and devices fabricated utilizing methods
US10147843B2 (en) 2008-07-24 2018-12-04 Lumileds Llc Semiconductor light emitting device including a window layer and a light-directing structure
US8236582B2 (en) * 2008-07-24 2012-08-07 Philips Lumileds Lighting Company, Llc Controlling edge emission in package-free LED die
DE102008039790B4 (de) * 2008-08-26 2022-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
JP2010087292A (ja) 2008-09-30 2010-04-15 Toyoda Gosei Co Ltd 発光素子
JP4601726B2 (ja) 2009-01-27 2010-12-22 三菱電機株式会社 送信装置、送受信装置、通信システム、および通信方法
JP5477374B2 (ja) * 2009-03-27 2014-04-23 コニカミノルタ株式会社 蛍光体部材、蛍光体部材の製造方法、及び照明装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201125161A (en) * 2009-11-23 2011-07-16 Koninkl Philips Electronics Nv III-V light emitting device with thin n-type region

Also Published As

Publication number Publication date
US10056531B2 (en) 2018-08-21
EP2748864B1 (en) 2020-02-05
JP2016213490A (ja) 2016-12-15
TW201318229A (zh) 2013-05-01
JP6294402B2 (ja) 2018-03-14
KR20190038671A (ko) 2019-04-08
CN103748696B (zh) 2018-06-22
WO2013030718A1 (en) 2013-03-07
TW201717436A (zh) 2017-05-16
CN103748696A (zh) 2014-04-23
JP6305337B2 (ja) 2018-04-04
KR20140053361A (ko) 2014-05-07
TWI583029B (zh) 2017-05-11
KR101965265B1 (ko) 2019-04-04
EP2748864A1 (en) 2014-07-02
KR102082499B1 (ko) 2020-02-27
US20140179029A1 (en) 2014-06-26
JP2014525674A (ja) 2014-09-29

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