TWI631609B - 基板處理裝置、基板處理方法及基板之製造方法 - Google Patents

基板處理裝置、基板處理方法及基板之製造方法 Download PDF

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Publication number
TWI631609B
TWI631609B TW106105781A TW106105781A TWI631609B TW I631609 B TWI631609 B TW I631609B TW 106105781 A TW106105781 A TW 106105781A TW 106105781 A TW106105781 A TW 106105781A TW I631609 B TWI631609 B TW I631609B
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TW
Taiwan
Prior art keywords
substrate
processing
liquid
substrate processing
drainage
Prior art date
Application number
TW106105781A
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English (en)
Chinese (zh)
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TW201802915A (zh
Inventor
Koichi Hamada
濱田晃一
Nobuo Kobayashi
小林信雄
Original Assignee
Shibaura Mechatronics Corporation
芝浦機械電子裝置股份有限公司
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Application filed by Shibaura Mechatronics Corporation, 芝浦機械電子裝置股份有限公司 filed Critical Shibaura Mechatronics Corporation
Publication of TW201802915A publication Critical patent/TW201802915A/zh
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Publication of TWI631609B publication Critical patent/TWI631609B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0404—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6506—Formation of intermediate materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
TW106105781A 2016-02-25 2017-02-21 基板處理裝置、基板處理方法及基板之製造方法 TWI631609B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016034659 2016-02-25
JP2016-034659 2016-02-25
JP2017009913A JP6845696B2 (ja) 2016-02-25 2017-01-24 基板処理装置、基板処理方法及び基板の製造方法
JP2017-009913 2017-01-24

Publications (2)

Publication Number Publication Date
TW201802915A TW201802915A (zh) 2018-01-16
TWI631609B true TWI631609B (zh) 2018-08-01

Family

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TW106105781A TWI631609B (zh) 2016-02-25 2017-02-21 基板處理裝置、基板處理方法及基板之製造方法

Country Status (4)

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JP (1) JP6845696B2 (https=)
KR (1) KR101971227B1 (https=)
CN (1) CN113611636B (https=)
TW (1) TWI631609B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102030068B1 (ko) * 2017-10-12 2019-10-08 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7227758B2 (ja) * 2018-05-31 2023-02-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7088810B2 (ja) * 2018-11-07 2022-06-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7249880B2 (ja) * 2019-05-30 2023-03-31 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
KR102136126B1 (ko) * 2019-08-26 2020-07-23 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102548824B1 (ko) * 2020-04-07 2023-06-27 세메스 주식회사 기판 처리 방법 및 기판 처리 장치
KR102896651B1 (ko) * 2021-10-14 2025-12-08 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102889410B1 (ko) 2021-10-14 2025-11-24 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

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JP2007180268A (ja) * 2005-12-28 2007-07-12 Ses Co Ltd 基板処理装置
US20120064256A1 (en) * 2010-09-13 2012-03-15 Tokyo Electron Limited Liquid Processing Apparatus, Liquid Processing Method and Storage Medium
US20120160274A1 (en) * 2010-12-27 2012-06-28 Tokyo Electron Limited Liquid Processing Apparatus, Liquid Processing Method, and Recording Medium Having Program for Executing Liquid Processing Method Recorded Therein
US20130260574A1 (en) * 2012-03-28 2013-10-03 Dainippon Screen Mfg. Co., Ltd Substrate processing apparatus and substrate processing method
US20140374022A1 (en) * 2011-12-28 2014-12-25 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
TW201606911A (zh) * 2014-07-02 2016-02-16 斯克林集團公司 基板處理裝置及基板處理方法

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JP6270268B2 (ja) * 2014-02-27 2018-01-31 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

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Publication number Priority date Publication date Assignee Title
JP2007180268A (ja) * 2005-12-28 2007-07-12 Ses Co Ltd 基板処理装置
US20120064256A1 (en) * 2010-09-13 2012-03-15 Tokyo Electron Limited Liquid Processing Apparatus, Liquid Processing Method and Storage Medium
US20120160274A1 (en) * 2010-12-27 2012-06-28 Tokyo Electron Limited Liquid Processing Apparatus, Liquid Processing Method, and Recording Medium Having Program for Executing Liquid Processing Method Recorded Therein
US20140374022A1 (en) * 2011-12-28 2014-12-25 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
US20130260574A1 (en) * 2012-03-28 2013-10-03 Dainippon Screen Mfg. Co., Ltd Substrate processing apparatus and substrate processing method
TW201606911A (zh) * 2014-07-02 2016-02-16 斯克林集團公司 基板處理裝置及基板處理方法

Also Published As

Publication number Publication date
CN113611636B (zh) 2024-07-26
JP2017152686A (ja) 2017-08-31
TW201802915A (zh) 2018-01-16
CN113611636A (zh) 2021-11-05
KR20170100431A (ko) 2017-09-04
JP6845696B2 (ja) 2021-03-24
KR101971227B1 (ko) 2019-04-23

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