JP4571208B2 - 半導体製造装置 - Google Patents
半導体製造装置 Download PDFInfo
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- JP4571208B2 JP4571208B2 JP2008187636A JP2008187636A JP4571208B2 JP 4571208 B2 JP4571208 B2 JP 4571208B2 JP 2008187636 A JP2008187636 A JP 2008187636A JP 2008187636 A JP2008187636 A JP 2008187636A JP 4571208 B2 JP4571208 B2 JP 4571208B2
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- 239000004065 semiconductor Substances 0.000 title claims description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 238000007747 plating Methods 0.000 claims description 286
- 239000000758 substrate Substances 0.000 claims description 216
- 238000000034 method Methods 0.000 claims description 185
- 230000008569 process Effects 0.000 claims description 179
- 238000012545 processing Methods 0.000 claims description 85
- 238000010438 heat treatment Methods 0.000 claims description 61
- 230000007246 mechanism Effects 0.000 claims description 50
- 239000003002 pH adjusting agent Substances 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 238000003860 storage Methods 0.000 claims description 8
- 238000007599 discharging Methods 0.000 claims description 4
- 239000012530 fluid Substances 0.000 description 106
- 238000011282 treatment Methods 0.000 description 77
- 239000007788 liquid Substances 0.000 description 74
- 238000004140 cleaning Methods 0.000 description 65
- 238000007772 electroless plating Methods 0.000 description 43
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 43
- 230000032258 transport Effects 0.000 description 24
- 230000007723 transport mechanism Effects 0.000 description 20
- 230000002093 peripheral effect Effects 0.000 description 16
- 238000001035 drying Methods 0.000 description 14
- 238000001816 cooling Methods 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000012546 transfer Methods 0.000 description 10
- 239000010949 copper Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 238000003825 pressing Methods 0.000 description 7
- 230000006870 function Effects 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910017052 cobalt Inorganic materials 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- 238000010792 warming Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
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- DUEPRVBVGDRKAG-UHFFFAOYSA-N carbofuran Chemical compound CNC(=O)OC1=CC=CC2=C1OC(C)(C)C2 DUEPRVBVGDRKAG-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011534 incubation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Claims (4)
- 複数の基板に連続してめっき処理を施す半導体製造装置であって、
1枚の基板処理に必要なpH調整剤を含む所定量のめっき液を収容し、収容した前記めっき液を所定の温度に調節する温度調節部と、
前記基板を1枚ずつ所定位置に保持する保持部と、
前記温度調節部に収容され温度調節された前記めっき液を、前記保持部により保持された前記基板の処理面に吐出する供給孔を有するノズルと、
前記温度調節部に収容され前記所定の温度に調節された前記めっき液を、前記保持部により保持された基板を1枚処理する度に、前記ノズルの前記供給孔に向けて全量を送り出す送り出し機構と、
前記めっき処理に必要なめっき成膜速度および前記めっき液に含まれるpH調整剤の濃度に応じて、前記送り出し機構による前記めっき液の供給および該供給のタイミングと前記温度調節部による前記めっき液の温度調節時間とを制御する制御部と
を具備したことを特徴とする半導体製造装置。 - 前記制御部は、さらに前記めっき処理に要する工程時間に基づいて、前記めっき液の供給および該供給のタイミングと前記めっき液の温度調節時間とを制御することを特徴とする請求項1記載の半導体製造装置。
- 前記めっき成膜速度と、前記pH調整剤の濃度と、前記めっき成膜速度および前記pH調整剤の濃度に対応する前記めっき液の所要加温時間とを定義したテーブルを記憶する記憶部をさらに備え、
前記制御部は、前記テーブルに基づいて前記めっき液の供給および該供給のタイミングと前記めっき液の温度調節時間とを制御すること
を特徴とする請求項1記載の半導体製造装置。 - 前記めっき成膜速度と、前記pH調整剤の濃度と、前記工程時間と、前記めっき成膜速度、前記pH調整剤の濃度および前記工程時間に対応する前記めっき液の所要加温時間とを定義したテーブルを記憶する記憶部をさらに備え、
前記制御部は、前記テーブルに基づいて前記めっき液の供給および該供給のタイミングと前記めっき液の温度調節時間とを制御すること
を特徴とする請求項2記載の半導体製造装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008187636A JP4571208B2 (ja) | 2008-07-18 | 2008-07-18 | 半導体製造装置 |
US12/405,620 US20100015791A1 (en) | 2008-07-18 | 2009-03-17 | Supply apparatus, semiconductor manufacturing apparatus and semiconductor manufacturing method |
KR1020090022644A KR101178868B1 (ko) | 2008-07-18 | 2009-03-17 | 공급 장치, 반도체 제조 장치 및 반도체 제조 방법 |
TW098108771A TWI427726B (zh) | 2008-07-18 | 2009-03-18 | 半導體製造裝置及半導體製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008187636A JP4571208B2 (ja) | 2008-07-18 | 2008-07-18 | 半導体製造装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010178727A Division JP5095786B2 (ja) | 2010-08-09 | 2010-08-09 | 半導体製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010024496A JP2010024496A (ja) | 2010-02-04 |
JP4571208B2 true JP4571208B2 (ja) | 2010-10-27 |
Family
ID=41530660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008187636A Active JP4571208B2 (ja) | 2008-07-18 | 2008-07-18 | 半導体製造装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20100015791A1 (ja) |
JP (1) | JP4571208B2 (ja) |
KR (1) | KR101178868B1 (ja) |
TW (1) | TWI427726B (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8937014B2 (en) | 2010-10-14 | 2015-01-20 | Tokyo Electron Limited | Liquid treatment apparatus and liquid treatment method |
JP5496925B2 (ja) * | 2011-01-25 | 2014-05-21 | 東京エレクトロン株式会社 | めっき処理装置、めっき処理方法および記憶媒体 |
JP2012153936A (ja) * | 2011-01-25 | 2012-08-16 | Tokyo Electron Ltd | めっき処理装置、めっき処理方法および記憶媒体 |
JP5634341B2 (ja) * | 2011-06-29 | 2014-12-03 | 東京エレクトロン株式会社 | めっき処理装置、めっき処理方法および記憶媒体 |
KR101910803B1 (ko) * | 2011-08-04 | 2019-01-04 | 세메스 주식회사 | 기판처리장치 |
JP6737436B2 (ja) * | 2015-11-10 | 2020-08-12 | 株式会社Screenホールディングス | 膜処理ユニットおよび基板処理装置 |
JP7117923B2 (ja) * | 2018-07-13 | 2022-08-15 | 株式会社Screenホールディングス | 塗布処理装置および塗布処理方法 |
CN113227453B (zh) * | 2018-12-28 | 2024-04-16 | 东京毅力科创株式会社 | 基板液处理装置和基板液处理方法 |
US20220251709A1 (en) * | 2019-06-17 | 2022-08-11 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002053972A (ja) * | 2000-08-04 | 2002-02-19 | Sony Corp | 無電解メッキ装置および無電解メッキ方法 |
JP2003129251A (ja) * | 2001-10-17 | 2003-05-08 | Ebara Corp | めっき装置 |
JP2005060792A (ja) * | 2003-08-18 | 2005-03-10 | Tokyo Electron Ltd | 無電解メッキ装置および無電解メッキ方法 |
JP2006057171A (ja) * | 2004-08-23 | 2006-03-02 | Tokyo Electron Ltd | 無電解めっき装置 |
JP2006111938A (ja) * | 2004-10-15 | 2006-04-27 | Tokyo Electron Ltd | 無電解めっき装置 |
JP2007177324A (ja) * | 2005-12-02 | 2007-07-12 | Tokyo Electron Ltd | 無電解めっき装置および無電解めっき方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3396455B2 (ja) * | 1999-06-22 | 2003-04-14 | アルプス電気株式会社 | 軟磁性膜及びその製造方法、ならびにこの軟磁性膜を用いた薄膜磁気ヘッド |
KR20070058310A (ko) * | 2005-12-02 | 2007-06-08 | 도쿄 엘렉트론 가부시키가이샤 | 무전해 도금 장치 및 무전해 도금 방법 |
-
2008
- 2008-07-18 JP JP2008187636A patent/JP4571208B2/ja active Active
-
2009
- 2009-03-17 US US12/405,620 patent/US20100015791A1/en not_active Abandoned
- 2009-03-17 KR KR1020090022644A patent/KR101178868B1/ko active IP Right Grant
- 2009-03-18 TW TW098108771A patent/TWI427726B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002053972A (ja) * | 2000-08-04 | 2002-02-19 | Sony Corp | 無電解メッキ装置および無電解メッキ方法 |
JP2003129251A (ja) * | 2001-10-17 | 2003-05-08 | Ebara Corp | めっき装置 |
JP2005060792A (ja) * | 2003-08-18 | 2005-03-10 | Tokyo Electron Ltd | 無電解メッキ装置および無電解メッキ方法 |
JP2006057171A (ja) * | 2004-08-23 | 2006-03-02 | Tokyo Electron Ltd | 無電解めっき装置 |
JP2006111938A (ja) * | 2004-10-15 | 2006-04-27 | Tokyo Electron Ltd | 無電解めっき装置 |
JP2007177324A (ja) * | 2005-12-02 | 2007-07-12 | Tokyo Electron Ltd | 無電解めっき装置および無電解めっき方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2010024496A (ja) | 2010-02-04 |
KR20100009467A (ko) | 2010-01-27 |
TWI427726B (zh) | 2014-02-21 |
US20100015791A1 (en) | 2010-01-21 |
KR101178868B1 (ko) | 2012-08-31 |
TW201005853A (en) | 2010-02-01 |
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