TWI629251B - 以焊接附接使用磷光體構件的高光學功率光轉換裝置 - Google Patents
以焊接附接使用磷光體構件的高光學功率光轉換裝置 Download PDFInfo
- Publication number
- TWI629251B TWI629251B TW105130995A TW105130995A TWI629251B TW I629251 B TWI629251 B TW I629251B TW 105130995 A TW105130995 A TW 105130995A TW 105130995 A TW105130995 A TW 105130995A TW I629251 B TWI629251 B TW I629251B
- Authority
- TW
- Taiwan
- Prior art keywords
- metal
- phosphor
- phosphor member
- conversion device
- heat sink
- Prior art date
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 169
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 49
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 40
- 230000003287 optical effect Effects 0.000 title claims description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 110
- 239000002184 metal Substances 0.000 claims abstract description 110
- 239000000919 ceramic Substances 0.000 claims abstract description 70
- 239000007787 solid Substances 0.000 claims abstract description 13
- 238000010791 quenching Methods 0.000 claims abstract description 10
- 230000000171 quenching effect Effects 0.000 claims abstract description 10
- 239000011521 glass Substances 0.000 claims abstract description 9
- 238000005336 cracking Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 28
- 238000000576 coating method Methods 0.000 claims description 27
- 238000000151 deposition Methods 0.000 claims description 25
- 238000009792 diffusion process Methods 0.000 claims description 20
- 230000004888 barrier function Effects 0.000 claims description 19
- 239000011248 coating agent Substances 0.000 claims description 19
- 239000012790 adhesive layer Substances 0.000 claims description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- 238000005476 soldering Methods 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 230000004907 flux Effects 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 230000005693 optoelectronics Effects 0.000 abstract description 23
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 13
- 238000005245 sintering Methods 0.000 description 12
- 238000003466 welding Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 230000003667 anti-reflective effect Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 239000004831 Hot glue Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- PSNPEOOEWZZFPJ-UHFFFAOYSA-N alumane;yttrium Chemical compound [AlH3].[Y] PSNPEOOEWZZFPJ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- -1 magnesium aluminate Chemical class 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000001429 visible spectrum Methods 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 2
- 229910020068 MgAl Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 241000219991 Lythraceae Species 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 235000014360 Punica granatum Nutrition 0.000 description 1
- AJZRPMVVFWWBIW-UHFFFAOYSA-N [Au].[Bi] Chemical compound [Au].[Bi] AJZRPMVVFWWBIW-UHFFFAOYSA-N 0.000 description 1
- RIRXDDRGHVUXNJ-UHFFFAOYSA-N [Cu].[P] Chemical compound [Cu].[P] RIRXDDRGHVUXNJ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012777 commercial manufacturing Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
- C03C14/006—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of microcrystallites, e.g. of optically or electrically active material
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/16—Cooling; Preventing overheating
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/20—Lamp housings
- G03B21/2006—Lamp housings characterised by the light source
- G03B21/2033—LED or laser light sources
- G03B21/204—LED or laser light sources using secondary light emission, e.g. luminescence or fluorescence
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
- H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/122—Metallic interlayers based on refractory metals
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/123—Metallic interlayers based on iron group metals, e.g. steel
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/125—Metallic interlayers based on noble metals, e.g. silver
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
- C04B2237/127—The active component for bonding being a refractory metal
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/341—Silica or silicates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/343—Alumina or aluminates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/366—Aluminium nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/368—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/402—Aluminium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/407—Copper
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/72—Forming laminates or joined articles comprising at least two interlayers directly next to each other
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/84—Joining of a first substrate with a second substrate at least partially inside the first substrate, where the bonding area is at the inside of the first substrate, e.g. one tube inside another tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Optics & Photonics (AREA)
- Multimedia (AREA)
- General Chemical & Material Sciences (AREA)
- Structural Engineering (AREA)
- Dispersion Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Geochemistry & Mineralogy (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Semiconductor Lasers (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
- Optical Filters (AREA)
- Projection Apparatus (AREA)
- Photovoltaic Devices (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
Abstract
一種光產生器,包括一光轉換裝置及一光源,該光源被佈置為向該光轉換構件施加一光束。該光轉換裝置包括:一光電陶瓷或其他固態磷光體構件,該構件包括嵌入於一陶瓷、玻璃或其他主體中的一或更多個磷光體;一金屬散熱器;及一焊接接合件,將該光電陶瓷磷光體構件附接至該金屬散熱器。反應於施加有效將該光電陶瓷磷光體構件加熱至該磷光體焠光點之光束能量之一光束的該光源,該光電陶瓷磷光體構件並不經歷破裂。
Description
此案請求於2015年12月9日所提出且標題為「HIGH OPTICAL POWER LIGHT CONVERSION DEVICE USING A PHOSPHOR ELEMENT WITH GLASS HOST」之第62/265,117號之美國臨時申請案的優先權權益。於2015年12月9日所提出之第62/265,117號的美國臨時申請案的整體內容以引用方式併入本文中。
此案請求於2015年9月25日所提出且標題為「HIGH OPTICAL POWER LIGHT CONVERSION DEVICE USING AN OPTOCERAMIC PHOSPHOR ELEMENT WITH SOLDER ATTACHMENT」之第62/232,702號之美國臨時申請案的優先權權益。於2015年9月25日所提出之第62/232,702號的美國臨時申請案的整體內容以引用方式併入本文中。
下文關於光學技術、磷光體技術、波長轉換技術及相關技術,且關於光電子、光子及使用相同技術的類似應用,例如(但不限於)投影顯示器(例如數位光處理(DLP))、汽車照明等等。
磷光體裝置已知是用於轉換光波長,通常是從較短波長下轉換至一或更多個較長波長。在通用的方法中,磷光體材料被分散在透明或半透明的黏合材料(例如環氧樹脂、聚矽氧等等)中。磷光體被雷射或其他泵激光源激發或「泵激」以發射磷光。磷光體裝置可為靜態的,或可被配置為磷光體輪,其中磷光體被安置在旋轉輪的外輪緣附近。磷光體輪設計可有利地藉由在不同的磷光體弧區段中使用不同磷光體來提供不同色彩(或更一般而言是不同光譜)的時序。亦可藉由在磷光體弧區段之間留下弧形間隙提供零發射的時期。此類輪可例如用以針對數位光處理(DLP)投影器或其他DLP顯示裝置提供順序的紅、綠及藍光。
針對高光學功率應用引起了以下問題:一般用在磷光體中的黏合材料由於被高功率泵激雷射加熱而易受熱損害。例如,在一般的下轉換任務(其中藍或紫外雷射被轉換至白光(或轉換至淡黃色光,該淡黃色光與藍色泵激雷射光調合以形成白光))中,雷射功率可能為25瓦特的數量級或更高,導致顯著的加熱。
此問題的解決方案是以陶瓷材料替換黏合材料,亦即使用光電陶瓷磷光體。一般的陶瓷材料是藉由以高溫且可選地在高壓下燒結粉末化基材、黏合劑及穩定劑的混合物來製造的。其他製造程序(例如化學氣相沉積(CVD))或化學反應可併入陶瓷製造程序。對於光電陶瓷磷光體而言,基材被選擇為包括所需磷光體成分,且混合物及燒結步驟被設計為產生在操作頻譜(包括泵激光及磷光兩者)上是光學透射的主體材料。陶瓷材料較傳統磷光體黏合材料(例如環氧樹脂或聚矽氧)為緻密,且光電陶瓷磷光體一般耐熱到高達燒結溫度,該燒結溫度通常至少為攝氏數百度,且取決於燒結程序可能高達1000o
C或更多。因此,期望光電陶瓷磷光體在被高功率雷射泵激時是熱穩定的。
某些可商購的光電陶瓷磷光體包括嵌入在陶瓷主體(例如多晶氧化鋁(Al2
O3
, PCA)、鑭摻雜氧化釔(Y2
O3
-La2
O3
)、釔鋁石榴石(Y3
Al5
O12
)、鋁酸鎂尖晶石(MgAl2
O4
)、氧化鏑(Dy2
O3
)、氧氮化鋁(Al23
O27
N5
)、氮化鋁(AlN)等等)中的釔鋁石榴石(YAG)、鈰摻雜YAG(YAG:Ce)、鎦YAG(LuYAG)、矽酸鹽基磷光體、矽鋁氮氧化物(SiAlON)磷光體等等。例如參照固態科學及技術ECS期刊第2卷第2章第R3168-76頁之Raukas等人所著的「Ceramic Phosphors for Light Conversion in LEDs」(2013年出版)。
某些改良被揭露在本文中。
依據某些揭露的實施例,一種光轉換裝置包括:一光電陶瓷磷光體構件,包括嵌入在一陶瓷主體中的一或更多個磷光體;一金屬散熱器;及一焊接接合件,將該光電陶瓷磷光體構件附接至該金屬散熱器。
依據某些揭露的實施例,一種光轉換裝置包括:一磷光體構件,包括嵌入在一固態主體構件中的一或更多個磷光體;一金屬散熱器;及一焊接接合件,將該磷光體構件附接至該金屬散熱器。在某些實施例中,該磷光體構件包括嵌入在一固態玻璃主體構件中的一或更多個磷光體。
依據某些揭露的態樣,一種光產生器包括:如兩個緊接在前之段落中之一者中所闡述的一光轉換裝置;及一光源,佈置為向該光轉換構件施加一光束。反應於施加有效將該光電陶瓷磷光體構件加熱至該磷光體焠光點之光束能量之一光束的該光源,該光電陶瓷磷光體構件並不經歷破裂。
依據某些揭露的實施例,一種製造一光轉換裝置的方法包括以下步驟:將一可焊接金屬疊沉積於一光電陶瓷磷光體構件的一背側上,該光電陶瓷磷光體構件包括嵌入在一陶瓷主體中的一或更多個磷光體;及藉由將該可焊接金屬疊焊接至一金屬散熱器,來將該光電陶瓷磷光體構件附接至該金屬散熱器。
依據某些揭露的實施例,揭露一種製造一光轉換裝置的方法。該方法包括以下步驟:將一可焊接金屬疊沉積於一磷光體構件的一背側上,該磷光體構件包括嵌入在一固態主體構件中的一或更多個磷光體;及藉由將該可焊接金屬疊焊接至一金屬散熱器,來將該磷光體構件附接至該金屬散熱器。
如本文中所使用的且在本領域中亦是傳統的,例如為「光譜」、「光學」、「波長」、「頻率」、「光」、「光束」等等的用語不限於可見光譜,反而對於給定的濾波器而言可延伸進紅外及/或紫外光譜區域或完全在該等區域內。
相較於期望光電陶瓷磷光體在被高功率雷射泵激時是熱穩定的期望,發明人已發現實際上,光電陶瓷磷光體在高功率泵激雷射輸出提升時經歷破壞性的故障。具體而言,使用黏著劑或熱膠安裝在散熱器上的靜態光電陶瓷磷光體構件在高功率泵激雷射提升期間經歷破壞性的破裂。
如本文中所揭露的,發明人已發現的是,可藉由採用針對散熱器(例如Al或Cu)之光電陶瓷磷光體的焊接連接來克服此災難性的破裂故障模式。在使用焊接件的情況下,泵激雷射功率可在不破裂光電陶瓷磷光體構件的情況下被提升至足夠高來產生磷光體淬火的泵激功率。在不限於任何特定操作理論的情況下,相信的是,在附接件的熱阻的意義上或在附接件的熱電抗的意義上(亦即熱傳輸提升之間的延遲),災難性的故障模式是由於不充分地將熱傳出光電陶瓷磷光體,而焊接件充分改良通過附接件的熱傳輸,以克服災難性的破裂故障模式。有鑑於此,除了焊接接合件,設想採用提供必要熱傳輸屬性的其他附接接合件。例如,設想以藉由在有機稀釋劑中(以提供均勻的分散)燒結銀(Ag)奈米微粒的粉末或膠形成的接合件來替換焊接接合件。在某些實施例中,雖然最佳的程序溫度取決於例如為Ag奈米微粒尺寸、密度及平均表面區域的因素,合適地以銀的熔化溫度(例如~250o
C)以下的溫度執行燒結步驟。在燒結發生的同時,可可選地施加輕微的壓力,及/或可可選地在受控的大氣中執行燒結。在燒結之後,銀將可用於相較於燒結溫度高得多的溫度。在不限於任何特定操作理論的情況下,相信此方法中的接合程序歸屬於原子擴散機制。
更一般而言,如本文中所揭露的,焊接連接用以將固態磷光體構件附接至散熱器(例如Al或Cu)。期望焊接件充分改良通過該附接件進行的熱傳輸,以克服災難性破裂或其他熱故障模式。有鑑於此,除了焊接接合件,設想採用提供必要熱傳輸屬性的其他附接接合件。
期望本文中所揭露的焊接接合方法針對各種類型的高溫磷光體構件(例如單晶或多晶磷光體構件、玻璃磷光體構件等等)提供益處,其中磷光體被摻入晶體、玻璃或其他固態主體材料。期望本文中所揭露的焊接接合方法針對其他類型的高溫磷光體構件(例如單晶或多晶磷光體構件)提供類似益處,其中磷光體在晶體生長程序期間被摻入具有高熱穩定性的晶體。
圖1圖解地圖示磷光體輪10
,該磷光體輪包括以銅、銅合金、鋁合金等等製造的金屬碟或「輪」12
。一或更多個光電陶瓷磷光體構件(例如弧區段14
)附接至輪12
的外周邊,亦即附接於輪12
的外輪緣處或附近。金屬碟或輪12
因此充當光電陶瓷磷光體弧區段14
的承載元件及散熱器兩者。說明性光電陶瓷磷光體弧區段14
為幾何上有利的設計,該設計最小化光電陶瓷磷光體材料的量,同時允許磷光體覆蓋整個輪的圓周。說明性磷光體輪10
包括六個相等尺寸的光電陶瓷磷光體弧區段14
;然而,可採用更多或更少的磷光體弧區段(包括少至形成完整的360o
圓形的單一光電陶瓷磷光體弧區段)。雖然通常繪示及標示說明性的六個光電陶瓷磷光體弧區段14
,將理解的是,不同的光電陶瓷磷光體弧區段可包括不同的磷光體(例如用以發射不同色彩的磷光)及/或在相鄰的光電陶瓷磷光體弧區段之間可能存在間隙。操作時,例如藉由將馬達的馬達軸(未圖示)連接至中心軸16
及操作馬達以使用所繪示的順時針方向CW旋轉磷光體輪10
(亦設想逆時針旋轉),金屬輪12
在中心軸16
周圍旋轉。與旋轉同步地,泵激光施加至局部區域--這圖解地藉由施用說明性泵激雷射束點L
的雷射18
指示於圖1中。在金屬輪12
旋轉時,其順序地使得光電陶瓷磷光體弧區段14
與雷射束L
接觸以發射磷光。將輕易理解的是,可依DLP顯示應用中的需要,藉由合適地選擇各種光電陶瓷磷光體弧區段14
的磷光體,可產生各種色彩時序,例如紅-綠-藍-紅-綠-藍。
繼續參照圖1且進一步參照圖2,區段S-S圖解地繪示一個光電陶瓷磷光體弧區段14
之一部分的橫截面及其針對金屬輪12
的焊接附接件。圖2圖示區段S-S的分解圖(左側)及圖解地指示主要製造操作的流程圖(右側)。注意的是,層的厚度在圖1的圖解區段S-S及其圖示於圖2中的分解圖中非依比例繪製。光電陶瓷磷光體弧區段14
包括光電陶瓷磷光體構件20
,該光電陶瓷磷光體構件藉由非限制說明的方式包括嵌入在於可見光譜中為光學透射性的陶瓷材料(例如多晶氧化鋁(Al2
O3
, PCA)、鑭摻雜氧化釔(Y2
O3
-La2
O3
)、釔鋁石榴石(Y3
Al5
O12
)、鋁酸鎂尖晶石(MgAl2
O4
)、氧化鏑(Dy2
O3
)、氧氮化鋁(Al23
O27
N5
)、氮化鋁(AlN)等等)中的磷光體(例如釔鋁石榴石(YAG)、鈰摻雜YAG(YAG:Ce)、鎦YAG(LuYAG)、矽酸鹽基磷光體、矽鋁氮氧化物(SiAlON)磷光體等等)。例如參照固態科學及技術ECS期刊第2卷第2章第R3168-76頁之Raukas等人所著的「Ceramic Phosphors for Light Conversion in LEDs」(2013年出版)。在其他實施例中,磷光體構件弧區段14
包括磷光體構件20
,該磷光體構件藉由非限制說明的方式包括嵌入在於可見光譜中為光學透射性之晶體、玻璃或其他固態主體材料中的磷光體(例如釔鋁石榴石(YAG)、鈰摻雜YAG(YAG:Ce)、鎦YAG(LuYAG)、矽酸鹽基磷光體、矽鋁氮氧化物(SiAlON)磷光體等等)。例如,主體材料可為玻璃,例如B270、BK7、P-SF68、P-SK57Q1、P-SK58A、P-BK7等等。
可適當選擇磷光體或磷光體摻雜物以發射所需的發射光,例如綠、黃、紅色或光組合(例如白色磷光體調合物)。可使用任何合適的程序來製造光電陶瓷磷光體構件20
,例如(藉由非限制說明的方式)以高溫燒結粉末狀的基材、黏合劑及穩定劑的混合物。在其他實施例中,例如使用玻璃主體材料,可使用合適的程序來製造磷光體構件20
,例如(藉由非限制說明的方式)熔化、模造、燒結等等。
在說明性示例中,為了說明而假設是光電陶瓷磷光體構件。可選地,可將一或更多個光學塗層施用於光電陶瓷磷光體構件20
的一或更多個表面。為了說明的目的,光電陶瓷磷光體弧區段14
包括前側抗反射(AR)塗層22
及背側介電或金屬或混合式介電/金屬鏡塗層24
。(如本文中所使用的用語「前側」表示光電陶瓷磷光體構件20
的側邊,來自泵激雷射18
或其他泵激光束的光束衝擊於該側邊處;而如本文中所使用的的用語「背側」表示光電陶瓷磷光體構件20
的側邊,該側邊附接至散熱器12
(其中,再次地,在說明性示例中,磷光體輪10
的金屬輪12
充當光電陶瓷磷光體構件20
的散熱器))。AR塗層22
被設計為最小化衝擊於光電陶瓷磷光體構件20
上之泵激雷射光的反射,同時不妨礙磷光的發射。介電鏡塗層24
被設計為反射磷光,且可選地亦被設計為反射泵激雷射光。如圖2中所指示的,可藉由噴濺沉積S1
施加這些塗層,雖然適用於沉積構成這些塗層22
、24
之材料的任何其他沉積技術可用以執行沉積S1
。亦將理解的是,可忽略光學塗層22
、24
中的一者或兩者,及/或可提供其他光學塗層,例如波長選擇性濾波器塗層、光散射塗層、經沉積的菲涅耳透鏡等等。
繼續參照圖1及2,光電陶瓷磷光體構件20
及介電或金屬鏡塗層24
(若有的話)一般並非是非常適合焊接接合的材料。為了促進藉由焊接的方式將光電陶瓷磷光體弧區段14
附接至金屬輪12
,光電陶瓷磷光體弧區段14
更包括可焊接金屬疊30
,該可焊接金屬疊被沉積於光電陶瓷磷光體構件20
的背側上(或者,在說明性示例中更具體地是沉積在介電鏡塗層24
的背側上)。可焊接金屬疊30
可包括少達單一的金屬層;在說明性實施例中,可焊接金屬疊30
包括:構件20
附近之(藉由非限制說明性示例的方式)鉻或鈦或鈦鎢(TiW)合金的黏著層32
;(藉由非限制說明性示例的方式)鎳的擴散隔絕層34
;及(藉由非限制說明性示例的方式)金的可焊接金屬疊36
。這僅是說明性示例,且可採用本領域中已知的用於促進將非金屬構件焊接至金屬構件的許多可焊接焊接疊。藉由某些進一步非限制說明性示例的方式:可焊接金屬層36
可為銀、鉑或另一金以外之焊接相容的金屬或金屬子疊;鎳擴散隔絕層可包括數個百分比(例如5%)的釩,以減少其磁屬性以便促進藉由磁控濺射進行沉積;可完全忽略擴散隔絕層34
及/或可完全忽略黏著層32
;等等。如圖2中所指示的,可焊接金屬疊30
例如可藉由噴濺、電鍍、真空金屬蒸發(例如使用電子束蒸發、熱蒸發)等等在金屬沉積操作S2
中被沉積在光電陶瓷磷光體構件20
的背側上(或者,在說明性示例中更具體地是沉積在介電鏡塗層24
的背側上),雖然適用於沉積構成這些可焊接金屬疊30
之材料的任何其他沉積技術可用以執行沉積S1
。
繼續參照圖1及2,包括光電陶瓷磷光體構件20
、可選光學塗層22
、24
及可焊接金屬疊30
的光電陶瓷磷光體弧區段14
藉由形成焊接接合件40
的焊接操作S3
附接至金屬基板12
(圖1之說明性示例中的金屬輪12
)。在圖解地繪示於圖2中之一個合適的方法中,焊接操作S3
需要將光電陶瓷磷光體弧區段14
放置在金屬散熱器12
上,其中塗有助焊劑402
的焊接預製體401
截接在光電陶瓷磷光體弧區段14
及金屬散熱器12
之間。在另一設想的實施例中,助焊劑被混入焊接預製體而非塗覆於焊接預製體上。廣範圍的焊接合金可用於焊接預製體401
,藉由非限制性示例的方式例如鉛/銦/銀焊接合金、金/錫焊接合金、金-矽(AuSi)合金等等。此組件接著被加熱至焊接溫度,該焊接溫度有效地使得焊料401
、402
在可焊接金屬疊30
及金屬散熱器12
之間形成焊接接合件40
。設想其他方法以供執行焊接操作S3
,例如採用焊接槍來將預混合的焊接材料及助焊劑安置至要焊接在一起的表面中的一或兩者上且接著將它們壓在一起。對於商業製造而言,焊接接合操作S3
應為具有高產量的自動化程序。
簡要參照圖3,在一變體實施例中,要作出焊接附接的散熱基板12
包括凹部44
,該凹部被調整形狀且具有充足的深度以接收塗有助焊劑402
的焊接預製體401
,以便促進焊接操作S3
。造成的裝置將接著具有安置於凹部44
中的焊接接合件40
。可選地,凹部44
可為足夠深的,以亦接收光電陶瓷磷光體弧區段14
的下部分,使得造成的裝置具有安置於凹部44
中的焊接接合件40
及光電陶瓷磷光體構件20
的下部分。
該說明性實施例涉及圖1的磷光體輪10
。然而,將理解的是,所揭露之用於將光電陶瓷磷光體構件20
焊接附接至金屬散熱器12
的方法可等效應用於將靜態磷光體構件附接至散熱器。例如,在一個應用中,光電陶瓷磷光體構件20
包含產生黃色或淡黃色磷光的一或更多個磷光體,且泵激雷射束為藍色雷射束。藉由適當調諧光電陶瓷磷光體構件20
中的磷光體濃度及藍色泵激光束功率,產生了藍色泵激光及黃色或淡黃色磷光的混合物,該混合物趨近於白光。可在任何所需的光學系統中採用光電陶瓷磷光體構件。作為一個非限制性示例,可與光隧道結合採用如本文中所揭露地焊接至散熱器的靜態光電陶瓷磷光體構件,其中藉由透過如本文中所揭露的焊接接合件從光電陶瓷磷光體構件向散熱器進行高效的熱傳輸來調適光隧道中的高光學功率。
在實驗性測試中,為了比較,已與藉由熱膠附接至銅散熱器的光電陶瓷磷光體構件連同測試了焊接至銅散熱器的光電陶瓷磷光體構件。某些受測的光電陶瓷磷光體構件包括前側AR塗層22
及背側介電鏡塗層24
,其中後者被設計用於背側空氣介面。在測試時,對於有效將光電陶瓷磷光體構件加熱到高達及超過磷光體淬火點的光束能量而言,沒有觀察到藉由焊接固定至散熱器之光電陶瓷磷光體構件的破裂。相較之下,藉由熱膠固定至散熱器的光電陶瓷磷光體構件在泵激雷射功率增加時展現了災難性的破裂,且此破裂完全發生在到達磷光體淬火點之前,使其限制了裝置的熱範圍。亦在使用熱膠來安裝的光電陶瓷磷光體構件中觀察到對於AR塗層22
的損害,相較於使用所揭露之焊接接合件來安裝的光電陶瓷磷光體構件,導致了減少的雷射誘發損害(LITD)門檻值。亦驚訝地觀察到的是,針對背側空氣介面而設計的背側介電鏡塗層24
提供實質的光輸出改良,儘管事實是背側介面是針對焊接接合件40
而非針對設計基礎的空氣(折射率n=1)。在不限於特定操作理論的情況下,相信的是,這可能是由於疊的多個層提供了顯著的反射,使得到達背側之鏡/焊接介面之光的小部分是低的。
這些結果顯示的是,所揭露的焊接附接方法允許建構一種被動式光轉換裝置,該裝置包括:光電陶瓷磷光體構件20
,包括嵌入於陶瓷主體中的一或更多個磷光體;金屬散熱器12
;及焊接接合件40
,將光電陶瓷磷光體構件20
附接至金屬散熱器12
,該裝置可在光電陶瓷磷光體構件20
不經歷破裂的情況下,以高達磷光體焠光點之任何值的泵激光束能量操作。相較之下,傳統的熱膠附接完全在磷光體焠火點之下造成災難性的破裂,藉此限制了裝置效能。注意的是,所揭露的焊接接合針對被動式光學構件提供了改良的裝置效能,該等光學構件在許多實施例中不包括電氣或電子元件。
將理解的是,各種以上所揭露的及其他的特徵及功能或其替代方案可理想地結合進許多其他不同系統或應用。將進一步理解的是,可藉由本領域中具技藝者在將來作出其中之各種目前未預見或未理解的替代方案、更改、變化或改良,其亦欲由以下請求項所包括。
10‧‧‧磷光體輪
12‧‧‧金屬碟或輪
14‧‧‧光電陶瓷磷光體弧區段
16‧‧‧中心軸
18‧‧‧雷射
20‧‧‧光電陶瓷磷光體構件
22‧‧‧前側抗反射(AR)塗層
24‧‧‧背側介電或金屬或混合式介電/金屬鏡塗層
30‧‧‧可焊接金屬疊
32‧‧‧黏著層
34‧‧‧擴散隔絕層
36‧‧‧可焊接金屬層
40‧‧‧焊接接合件
401‧‧‧焊接預製體
402‧‧‧助焊劑
44‧‧‧凹部
CW‧‧‧順時針方向
L‧‧‧雷射束
S-S‧‧‧區段
S1‧‧‧噴濺沉積操作
S2‧‧‧金屬沉積操作
S3‧‧‧焊接操作
12‧‧‧金屬碟或輪
14‧‧‧光電陶瓷磷光體弧區段
16‧‧‧中心軸
18‧‧‧雷射
20‧‧‧光電陶瓷磷光體構件
22‧‧‧前側抗反射(AR)塗層
24‧‧‧背側介電或金屬或混合式介電/金屬鏡塗層
30‧‧‧可焊接金屬疊
32‧‧‧黏著層
34‧‧‧擴散隔絕層
36‧‧‧可焊接金屬層
40‧‧‧焊接接合件
401‧‧‧焊接預製體
402‧‧‧助焊劑
44‧‧‧凹部
CW‧‧‧順時針方向
L‧‧‧雷射束
S-S‧‧‧區段
S1‧‧‧噴濺沉積操作
S2‧‧‧金屬沉積操作
S3‧‧‧焊接操作
圖1繪示包括六個磷光體弧區段的磷光體輪。圖1的區段S-S圖示磷光體構件中之一者的一部分的橫截面及其針對金屬輪的焊接件。
圖2圖示圖1之區段S-S的分解圖(左側)及圖解地指示主要製造操作的流程圖(右側)。
圖3圖示變種實施例,其中散熱器(例如圖1的金屬輪)具有一凹部,該凹部被調整形狀及尺寸以至少接收焊接件及可選地接收磷光體構件的下部分。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
(請換頁單獨記載) 無
Claims (37)
- 一種光轉換裝置,包括:一光電陶瓷磷光體構件,包括嵌入在一陶瓷主體中的一或更多個磷光體;一可焊接金屬疊,安置於該光電陶瓷磷光體構件的一背側上,該可焊接金屬疊包含二或更多個金屬層,該等金屬層之其中一者為一可焊接金屬層;一金屬散熱器;及一焊接接合件,將該可焊接金屬疊附接至該金屬散熱器。
- 如請求項1所述之光轉換裝置,其中該光轉換裝置為一磷光體輪,且該金屬散熱器為一金屬碟,其中該光電陶瓷磷光體構件係由該焊接接合件附接至該金屬碟之外緣。
- 如請求項1所述之光轉換裝置,更包括:一鏡塗層,安置於該光電陶瓷磷光體構件及該可焊接金屬疊間之該光電陶瓷磷光體構件的一背側上。
- 如請求項3所述之光轉換裝置,其中該鏡為一介電鏡,該介電鏡被設計為同一背側空氣介面操作。
- 如請求項1所述之光轉換裝置,其中第二個金屬層為一黏著層或一擴散隔絕層。
- 如請求項1所述之光轉換裝置,其中該可焊接金屬疊包含該可焊接金屬層;一黏著層,鄰接於該光電陶瓷磷光體構件;及一擴散隔絕層,安置於該黏著層及該可焊接金屬層之間。
- 如請求項6所述之光轉換裝置,其中該黏著層包含鉻或鈦,該擴散隔絕層包含鎳,且該可焊接金屬層包含金或銀。
- 如請求項7所述之光轉換裝置,其中該可焊接金屬疊的該擴散隔絕層亦包括釩。
- 如請求項1所述之光轉換裝置,其中該金屬散熱器包括一凹部,該焊接接合件安置於該凹部內。
- 如請求項9所述之光轉換裝置,其中該光電陶瓷磷光體構件的一下部分亦安置於該散熱器的該凹部內。
- 如請求項1所述之光轉換裝置,其中反應於具有有效將該光電陶瓷磷光體構件加熱至該磷光體焠光點之光束能量的一經施加光束,該光電陶瓷磷光體構件並不經歷破裂。
- 一種光產生器,包括:如請求項1所述之一光轉換裝置;及 一光源,佈置為向該光轉換構件施用一光束;其中反應於施加有效將該光電陶瓷磷光體構件加熱至該磷光體焠光點之光束能量之一光束的該光源,該光電陶瓷磷光體構件並不經歷破裂。
- 一種光轉換裝置,包括:一磷光體構件,包括嵌入在一固態主體構件中的一或更多個磷光體;一可焊接金屬疊,安置於該磷光體構件的一背側上,該可焊接金屬疊包含:一黏著層,鄰接於該磷光體構件;一可焊接金屬層;及一擴散隔絕層,安置於該黏著層及該可焊接金屬層之間;一金屬散熱器;及一焊接接合件,將該磷光體構件附接至該金屬散熱器。
- 如請求項13所述之光轉換裝置,其中該光轉換裝置為一磷光體輪,且該金屬散熱器為一金屬碟,其中該磷光體構件係由該焊接接合件附接至該金屬碟之外緣。
- 如請求項13所述之光轉換裝置,更包括: 一鏡塗層,安置於該磷光體構件及該可焊接金屬疊間之該磷光體構件的一背側上。
- 如請求項15所述之光轉換裝置,其中該鏡為一介電鏡,該介電鏡被設計為同一背側空氣介面操作。
- 如請求項13所述之光轉換裝置,其中該黏著層包含鉻或鈦,該擴散隔絕層包含鎳,且該可焊接金屬層包含金或銀。
- 如請求項17所述之光轉換裝置,其中該可焊接金屬疊的該擴散隔絕層亦包括釩。
- 如請求項13所述之光轉換裝置,其中該金屬散熱器包括一凹部,該焊接接合件安置於該凹部內。
- 如請求項19所述之光轉換裝置,其中該磷光體構件的一下部分亦安置於該散熱器的該凹部內。
- 如請求項13所述之光轉換裝置,其中該磷光體構件包括嵌入在一固態玻璃主體構件中的一或更多個磷光體。
- 如請求項21所述之光轉換裝置,其中該固態玻璃主體構件包括B270、BK7、P-SF68、P-SK57Q1、P-SK58A或P-BK7。
- 一種光產生器,包括:如請求項13所述之一光轉換裝置;及 一光源,佈置為向該光轉換構件施用一光束;其中反應於施加有效將該光電陶瓷磷光體構件加熱至該磷光體焠光點之光束能量之一光束的該光源,該光電陶瓷磷光體構件並不經歷破裂。
- 一種製造一光轉換裝置的方法,包括:藉由下列步驟,將一可焊接金屬疊形成於一光電陶瓷磷光體構件的一背側上,該光電陶瓷磷光體構件包括嵌入在一陶瓷主體中的一或更多個磷光體;沉積一黏著層於該光電陶瓷磷光體構件之背側上;沉積一擴散隔絕層於該黏著層上;及沉積一可焊接金屬層於該擴散隔絕層上;藉由將該可焊接金屬疊焊接至一金屬散熱器,來將該光電陶瓷磷光體構件附接至該金屬散熱器。
- 如請求項24所述之方法,更包括以下步驟:在將該黏著層沉積於該光電陶瓷磷光體構件的該背側上之前,將一介電鏡塗層沉積於該光電陶瓷磷光體構件的該背側上,藉此該可焊接金屬疊被形成於該介電鏡塗層上。
- 如請求項24所述之方法,其中該黏著層包含鉻或鈦,該擴散隔絕層包含鎳,且該可焊接金屬層包含金、銀或鉑。
- 如請求項26所述之方法,其中該擴散隔絕層亦包括釩。
- 如請求項24所述之方法,其中將該可焊接金屬疊沉積於該光電陶瓷磷光體構件的該背側上的該步驟包括以下步驟:將一可焊接的銀、鉑或金層沉積作為該可焊接金屬層;其中該焊接步驟包括將該可焊接的銀、鉑或金層焊接至該散熱器。
- 如請求項24所述之方法,其中該附接步驟包括以下步驟:在一焊接預製體截接於該光電陶瓷磷光體構件及該金屬散熱器之間的情況下,將該光電陶瓷磷光體構件沉積至該金屬散熱器上,以產生一組件;及將該組件加熱至一焊接溫度,該焊接溫度有效地使得該焊接預製體在該可焊接金屬疊及該金屬散熱器之間形成一焊接接合件。
- 如請求項29所述之方法,其中該焊接預製體包括塗覆至該焊接預製體上或混合進該焊接預製體的助焊劑。
- 如請求項29所述之方法,其中該焊接預製體包括一鉛/銦/銀焊接合金或一金/錫焊接合金。
- 一種製造一光轉換裝置的方法,包括:藉由下列步驟,將一可焊接金屬疊沉積於一磷光體構件的一背側上,該磷光體構件包括嵌入在一固態主體構件中的一或更多個磷光體;沉積一黏著層或一擴散隔絕層於該磷光體構件之背側上;及沉積一可焊接金屬層於該黏著層或該擴散隔絕層上;藉由將該可焊接金屬疊焊接至一金屬散熱器,來將該磷光體構件附接至該金屬散熱器。
- 如請求項32所述之方法,更包括以下步驟:在將該可焊接金屬疊沉積於該磷光體構件的該背側上之前,將一介電鏡塗層沉積於該磷光體構件的該背側上,藉此該可焊接金屬疊被沉積於該介電鏡塗層上。
- 如請求項32所述之方法,其中該黏著層包含鉻或鈦,該擴散隔絕層包含鎳,且該可焊接金屬層包含金、銀或鉑。
- 如請求項32所述之方法,其中將該可焊接金屬疊沉積於該磷光體構件的該背側上的該步驟包括以下步驟:沉積一可焊接的銀、鉑或金層,藉此於該黏著層或該擴散隔絕層上形成該可焊接金屬層; 其中該焊接步驟包括將該可焊接的銀、鉑或金層焊接至該散熱器。
- 如請求項32所述之方法,其中該附接步驟包括以下步驟:在一焊接預製體截接於該磷光體構件及該金屬散熱器之間的情況下,將該磷光體構件沉積至該金屬散熱器上,以產生一組件;及將該組件加熱至一焊接溫度,該焊接溫度有效地使得該焊接預製體在該可焊接金屬疊及該金屬散熱器之間形成一焊接接合件。
- 如請求項36所述之方法,其中該焊接預製體包括塗覆至該焊接預製體上或混合進該焊接預製體的助焊劑。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562232702P | 2015-09-25 | 2015-09-25 | |
US62/232,702 | 2015-09-25 | ||
US201562265117P | 2015-12-09 | 2015-12-09 | |
US62/265,117 | 2015-12-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201720777A TW201720777A (zh) | 2017-06-16 |
TWI629251B true TWI629251B (zh) | 2018-07-11 |
Family
ID=57121525
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105130995A TWI629251B (zh) | 2015-09-25 | 2016-09-26 | 以焊接附接使用磷光體構件的高光學功率光轉換裝置 |
Country Status (7)
Country | Link |
---|---|
US (4) | US10833211B2 (zh) |
EP (2) | EP3353125B1 (zh) |
JP (2) | JP7113745B2 (zh) |
KR (1) | KR102315807B1 (zh) |
CN (2) | CN113130722A (zh) |
TW (1) | TWI629251B (zh) |
WO (1) | WO2017053747A1 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113130722A (zh) | 2015-09-25 | 2021-07-16 | 美题隆公司 | 利用通过焊接附着的磷光体元件的高光功率的光转换装置 |
WO2019078299A1 (ja) * | 2017-10-19 | 2019-04-25 | パナソニックIpマネジメント株式会社 | 波長変換体 |
CN109696792B (zh) * | 2017-10-24 | 2022-03-29 | 中强光电股份有限公司 | 投影机及波长转换装置 |
US10712646B2 (en) * | 2018-02-09 | 2020-07-14 | Panasonic Intellectual Property Management Co., Ltd. | Phosphor wheel, light source device, and projection display apparatus |
JP2020046638A (ja) * | 2018-09-21 | 2020-03-26 | 日本特殊陶業株式会社 | 光波長変換装置 |
TWI680307B (zh) * | 2019-02-25 | 2019-12-21 | 台灣彩光科技股份有限公司 | 白光光源系統 |
CN112526808A (zh) * | 2019-09-19 | 2021-03-19 | 青岛海信激光显示股份有限公司 | 荧光转换部件及其制造方法、光源装置、显示系统 |
WO2021052512A1 (zh) * | 2019-09-19 | 2021-03-25 | 青岛海信激光显示股份有限公司 | 荧光转换部件及其制造方法、光源装置、显示系统 |
US20230229068A1 (en) | 2020-06-16 | 2023-07-20 | Signify Holding B.V. | Embedded phosphor ceramic tile |
WO2022005183A1 (ko) * | 2020-07-03 | 2022-01-06 | 주식회사 아모센스 | 파워모듈 |
CN112099150A (zh) * | 2020-09-28 | 2020-12-18 | 武汉驿路通科技股份有限公司 | 一种光纤阵列及其制作方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013206133A1 (de) * | 2013-04-08 | 2014-10-09 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines Konversionselements und Konversionselement |
CN104566229A (zh) * | 2013-10-15 | 2015-04-29 | 深圳市光峰光电技术有限公司 | 波长转换装置的制造方法 |
Family Cites Families (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5789068A (en) * | 1995-06-29 | 1998-08-04 | Fry's Metals, Inc. | Preformed solder parts coated with parylene in a thickness effective to exhibit predetermined interference colors |
US6323781B1 (en) * | 2000-08-22 | 2001-11-27 | Power Signal Technologies | Electronically steerable light output viewing angles for traffic signals |
US6791119B2 (en) * | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
US6634771B2 (en) * | 2001-08-24 | 2003-10-21 | Densen Cao | Semiconductor light source using a primary and secondary heat sink combination |
WO2003038497A1 (en) * | 2001-10-30 | 2003-05-08 | Xponent Photonics, Inc. | Optical junction apparatus and methods employing optical power transverse-transfer |
JP2003163315A (ja) * | 2001-11-29 | 2003-06-06 | Denki Kagaku Kogyo Kk | モジュール |
KR20070039600A (ko) * | 2004-07-26 | 2007-04-12 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 광 보호 수단을 포함하는 칩 및 그 제조 방법 |
JP5490407B2 (ja) * | 2005-03-14 | 2014-05-14 | コーニンクレッカ フィリップス エヌ ヴェ | 多結晶セラミック構造の蛍光体、及び前記蛍光体を有する発光素子 |
US20080149166A1 (en) * | 2006-12-21 | 2008-06-26 | Goldeneye, Inc. | Compact light conversion device and light source with high thermal conductivity wavelength conversion material |
KR101431711B1 (ko) * | 2008-05-07 | 2014-08-21 | 삼성전자 주식회사 | 발광 장치 및 발광 시스템의 제조 방법, 상기 방법을이용하여 제조한 발광 장치 및 발광 시스템 |
JP2011077187A (ja) | 2009-09-29 | 2011-04-14 | Denso Corp | 半導体装置 |
US8556437B2 (en) * | 2009-12-17 | 2013-10-15 | Stanley Electric Co., Ltd. | Semiconductor light source apparatus and lighting unit |
CN201677551U (zh) * | 2010-05-21 | 2010-12-22 | 中国电子科技集团公司第十三研究所 | 氮化铝陶瓷与金属的焊接结构 |
EP2610540A4 (en) * | 2010-08-26 | 2015-04-29 | Nippon Electric Glass Co | WAVELENGTH CONVERSION ELEMENT, LIGHT SOURCE AND LIGHT CRYSTAL WATER LIGHT UNIT |
JP5572038B2 (ja) * | 2010-08-27 | 2014-08-13 | スタンレー電気株式会社 | 半導体発光装置及びそれを用いた車両用灯具 |
US8483248B2 (en) * | 2010-09-14 | 2013-07-09 | Raytheon Company | Laser crystal components joined with thermal management devices |
JP2012098438A (ja) | 2010-11-01 | 2012-05-24 | Seiko Epson Corp | 波長変換素子、光源装置及びプロジェクター |
JP5799541B2 (ja) * | 2011-03-25 | 2015-10-28 | 株式会社ソシオネクスト | 半導体装置及びその製造方法 |
KR101812168B1 (ko) * | 2011-04-19 | 2017-12-26 | 엘지전자 주식회사 | 발광 소자 패키지 및 이를 이용한 발광 장치 |
JP2012243624A (ja) * | 2011-05-20 | 2012-12-10 | Stanley Electric Co Ltd | 光源装置および照明装置 |
DE102012005657B4 (de) | 2012-03-22 | 2020-06-10 | Schott Ag | Weißlichtbeleuchtungsvorrichtung |
JP6138420B2 (ja) * | 2012-04-06 | 2017-05-31 | シャープ株式会社 | 発光装置および車両用前照灯 |
JP2013219150A (ja) * | 2012-04-06 | 2013-10-24 | National Institute Of Advanced Industrial & Technology | 炭化珪素半導体装置のオーミック電極の製造方法 |
US20130264970A1 (en) * | 2012-04-06 | 2013-10-10 | Yew Cheong Kuan | Light emitting diode (led) components and methods for improved light extraction |
TWI535077B (zh) * | 2012-05-24 | 2016-05-21 | 台達電子工業股份有限公司 | 發光單元及其發光模組 |
EP2881648B1 (en) * | 2012-08-02 | 2018-01-03 | Nichia Corporation | Wavelength conversion device |
KR102061593B1 (ko) * | 2012-11-29 | 2020-02-20 | 엘지전자 주식회사 | 광원유닛과 이를 포함하는 영상투사장치 |
US9330993B2 (en) * | 2012-12-20 | 2016-05-03 | Intel Corporation | Methods of promoting adhesion between underfill and conductive bumps and structures formed thereby |
JP6107190B2 (ja) * | 2013-02-08 | 2017-04-05 | ウシオ電機株式会社 | 蛍光光源装置 |
CN104968995B (zh) | 2013-02-08 | 2017-03-08 | 优志旺电机株式会社 | 荧光光源装置 |
JP5971148B2 (ja) | 2013-02-15 | 2016-08-17 | ウシオ電機株式会社 | 蛍光光源装置 |
US8858607B1 (en) * | 2013-03-15 | 2014-10-14 | Gary W. Jones | Multispectral therapeutic light source |
US9873047B2 (en) * | 2013-07-12 | 2018-01-23 | Gree, Inc. | Server device, method for controlling the same, computer-readable recording medium and game system |
JP6604543B2 (ja) * | 2013-08-09 | 2019-11-13 | 株式会社タムラ製作所 | 発光装置 |
DE102013013296B4 (de) * | 2013-08-12 | 2020-08-06 | Schott Ag | Konverter-Kühlkörperverbund mit metallischer Lotverbindung und Verfahren zu dessen Herstellung |
US10488566B2 (en) * | 2014-01-27 | 2019-11-26 | Osram Sylvania Inc. | Ceramic wavelength converter having a high reflectivity reflector |
US9316388B2 (en) * | 2014-01-31 | 2016-04-19 | Christie Digital Systems Usa, Inc. | Device and kit for cooling a light emitting material |
US9651236B2 (en) * | 2014-01-31 | 2017-05-16 | Christie Digital Systems Usa, Inc. | Light emitting device with a heat sink composed of two materials |
WO2015140854A1 (ja) | 2014-03-19 | 2015-09-24 | パナソニックIpマネジメント株式会社 | 波長変換素子の製造方法 |
US9494849B2 (en) | 2014-07-28 | 2016-11-15 | Christie Digital Systems Usa, Inc. | Rotationally static light emitting material with rotating optics |
US9536851B2 (en) * | 2014-09-05 | 2017-01-03 | Infineon Technologies Ag | Preform structure for soldering a semiconductor chip arrangement, a method for forming a preform structure for a semiconductor chip arrangement, and a method for soldering a semiconductor chip arrangement |
DE102015113692A1 (de) * | 2014-09-11 | 2016-03-24 | Panasonic Intellectual Property Management Co., Ltd. | Wellenlängen-Umwandlungs-Element, Licht-emittierende Vorrichtung, Projektor und Verfahren zur Herstellung eines Wellenlängen-Umwandlungs-Elements |
CN113130722A (zh) * | 2015-09-25 | 2021-07-16 | 美题隆公司 | 利用通过焊接附着的磷光体元件的高光功率的光转换装置 |
KR101782421B1 (ko) * | 2015-12-31 | 2017-09-28 | 경상대학교산학협력단 | 복합재료 스티칭 용 재봉틀 |
-
2016
- 2016-09-23 CN CN202110414042.XA patent/CN113130722A/zh active Pending
- 2016-09-23 EP EP16778953.6A patent/EP3353125B1/en active Active
- 2016-09-23 CN CN201680067495.7A patent/CN108367968B/zh active Active
- 2016-09-23 JP JP2018515546A patent/JP7113745B2/ja active Active
- 2016-09-23 EP EP23190604.1A patent/EP4246227A3/en active Pending
- 2016-09-23 US US15/274,288 patent/US10833211B2/en active Active
- 2016-09-23 KR KR1020187011658A patent/KR102315807B1/ko active IP Right Grant
- 2016-09-23 WO PCT/US2016/053367 patent/WO2017053747A1/en active Application Filing
- 2016-09-26 TW TW105130995A patent/TWI629251B/zh active
-
2020
- 2020-09-25 US US17/032,877 patent/US11289616B2/en active Active
-
2021
- 2021-01-26 JP JP2021010194A patent/JP7170073B2/ja active Active
-
2022
- 2022-01-13 US US17/574,994 patent/US11658252B2/en active Active
-
2023
- 2023-04-14 US US18/300,897 patent/US12034092B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013206133A1 (de) * | 2013-04-08 | 2014-10-09 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines Konversionselements und Konversionselement |
CN104566229A (zh) * | 2013-10-15 | 2015-04-29 | 深圳市光峰光电技术有限公司 | 波长转换装置的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2017053747A1 (en) | 2017-03-30 |
CN113130722A (zh) | 2021-07-16 |
JP7170073B2 (ja) | 2022-11-11 |
JP7113745B2 (ja) | 2022-08-05 |
EP3353125A1 (en) | 2018-08-01 |
US20220140158A1 (en) | 2022-05-05 |
CN108367968B (zh) | 2021-05-07 |
US20230261123A1 (en) | 2023-08-17 |
US12034092B2 (en) | 2024-07-09 |
CN108367968A (zh) | 2018-08-03 |
JP2018531415A (ja) | 2018-10-25 |
US20210013349A1 (en) | 2021-01-14 |
US20170092786A1 (en) | 2017-03-30 |
US11289616B2 (en) | 2022-03-29 |
US11658252B2 (en) | 2023-05-23 |
US10833211B2 (en) | 2020-11-10 |
TW201720777A (zh) | 2017-06-16 |
KR20180056762A (ko) | 2018-05-29 |
KR102315807B1 (ko) | 2021-10-22 |
EP4246227A3 (en) | 2023-12-13 |
JP2021067957A (ja) | 2021-04-30 |
EP3353125B1 (en) | 2023-09-20 |
EP4246227A2 (en) | 2023-09-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI629251B (zh) | 以焊接附接使用磷光體構件的高光學功率光轉換裝置 | |
JP2018531415A6 (ja) | はんだ取付を伴う蛍光体要素を用いる高光学パワー光変換デバイス | |
JP6460162B2 (ja) | 波長変換装置の製造方法 | |
JP6296467B2 (ja) | 波長変換装置の製造方法 | |
CN107407479B (zh) | 荧光光源装置 | |
JP6203942B2 (ja) | 発光装置用基板の製造方法、発光装置の製造方法、及び照明装置の製造方法 | |
KR20180086303A (ko) | 발광 장치 및 그 제조 방법 | |
CN110737085B (zh) | 波长转换装置 | |
TWI791044B (zh) | 具有無機接合劑的磷光輪 | |
CN109477918A (zh) | 颜色转换元件 | |
WO2020088161A1 (zh) | 波长转换装置及其制备方法、发光装置和投影装置 | |
WO2019061818A1 (zh) | 一种波长转换装置及发光装置 | |
CN220647990U (zh) | 一种波长转换装置 | |
CN212060849U (zh) | 波长转换装置、发光装置和投影装置 | |
JP2019003090A (ja) | 蛍光体素子の製造方法 | |
CN115702229A (zh) | 嵌入式荧光体瓷砖 | |
TW202124142A (zh) | 波長轉換元件 | |
CN114077134A (zh) | 波长转换装置及其制备方法 |