WO2021052512A1 - 荧光转换部件及其制造方法、光源装置、显示系统 - Google Patents

荧光转换部件及其制造方法、光源装置、显示系统 Download PDF

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Publication number
WO2021052512A1
WO2021052512A1 PCT/CN2020/121629 CN2020121629W WO2021052512A1 WO 2021052512 A1 WO2021052512 A1 WO 2021052512A1 CN 2020121629 W CN2020121629 W CN 2020121629W WO 2021052512 A1 WO2021052512 A1 WO 2021052512A1
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WIPO (PCT)
Prior art keywords
layer
fluorescence conversion
conversion component
solder
component
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Application number
PCT/CN2020/121629
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English (en)
French (fr)
Inventor
张勇
韩五月
Original Assignee
青岛海信激光显示股份有限公司
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Priority claimed from CN201910888244.0A external-priority patent/CN112526809A/zh
Priority claimed from CN201910888253.XA external-priority patent/CN112526805A/zh
Application filed by 青岛海信激光显示股份有限公司 filed Critical 青岛海信激光显示股份有限公司
Publication of WO2021052512A1 publication Critical patent/WO2021052512A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements

Definitions

  • This application relates to the field of projection display technology, in particular to a fluorescence conversion component and a manufacturing method thereof, a light source device, and a display system.
  • Lasers are used in the field of projection display because of their high brightness, strong monochromaticity, and wide color gamut.
  • the laser light source usually uses a laser beam to excite the phosphor powder to emit light, and the light of the laser beam itself and the generated fluorescence are irradiated on the imaging component to realize image display.
  • the laser light source usually includes a laser and a fluorescent wheel.
  • the fluorescent wheel may include: a fluorescent conversion material layer, a carrier substrate, and a driving component.
  • the carrier substrate may include a reflective area and a transmissive area.
  • the fluorescence conversion material layer may be located in the reflection area of the carrier substrate, and the driving assembly may be used to drive the fluorescence conversion material layer and the carrier substrate to rotate.
  • the fluorescence conversion material layer can generate fluorescence under the irradiation of the laser beam, and the fluorescence can be reflected by the carrier substrate and irradiated on the display assembly.
  • the laser beam emitted by the laser irradiates the transmission area
  • the laser beam can be transmitted and irradiated on the display assembly. Since the fluorescent wheel can be rotated under the driving of the driving assembly, the fluorescent light and the laser beam can be irradiated to the display assembly in sequence to realize image display.
  • the fluorescence conversion material layer since the fluorescence conversion material layer generates a lot of heat after the laser beam is irradiated, its heat cannot be quickly dissipated and will be concentrated on the fluorescence conversion material layer, resulting in higher heat of the fluorescence conversion material layer and poor fluorescence conversion efficiency , which in turn leads to poor display effect of the display system.
  • a fluorescence conversion component includes: a fluorescence conversion component, a carrying component, a heat conduction layer, and a solder layer;
  • the fluorescence conversion component includes: a fluorescence conversion material layer and a reflective layer arranged in a stack;
  • the carrier component includes: a carrier substrate;
  • the solder layer is located between the fluorescence conversion component and the carrier component, and the fluorescence conversion component and the carrier component are welded by the solder layer;
  • the thermally conductive layer is located in the fluorescence conversion component, or the thermally conductive layer is located on the carrier substrate.
  • a method for manufacturing a fluorescence conversion component includes:
  • the fluorescence conversion component comprising a layered fluorescence conversion material layer and a reflective layer
  • the carrying component comprising a carrying substrate
  • the thermally conductive layer is located in the fluorescence conversion component, or the thermally conductive layer is located on the carrier substrate.
  • a light source device in yet another aspect, includes a laser and the fluorescence conversion component described in the above aspect.
  • a display system in another aspect, includes: the light source device described in the foregoing aspect.
  • FIG. 1 is a schematic structural diagram of a fluorescence conversion component provided by an embodiment of the present application
  • FIG. 2 is a schematic structural diagram of another fluorescence conversion component provided by an embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of yet another fluorescence conversion component provided by an embodiment of the present application.
  • FIG. 4 is a schematic structural diagram of still another fluorescence conversion component provided by an embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of yet another fluorescence conversion component provided by an embodiment of the present application.
  • Fig. 6 is a schematic structural diagram of yet another fluorescence conversion component provided by an embodiment of the present application.
  • FIG. 7 is a schematic structural diagram of still another fluorescence conversion component provided by an embodiment of the present application.
  • FIG. 8 is a schematic structural diagram of yet another fluorescence conversion component provided by an embodiment of the present application.
  • FIG. 9 is a schematic structural diagram of still another fluorescence conversion component provided by an embodiment of the present application.
  • FIG. 10 is a schematic structural diagram of yet another fluorescence conversion component provided by an embodiment of the present application.
  • FIG. 11 is a schematic structural diagram of still another fluorescence conversion component provided by an embodiment of the present application.
  • FIG. 12 is a schematic structural diagram of still another fluorescence conversion component provided by an embodiment of the present application.
  • FIG. 13 is a schematic structural diagram of yet another fluorescence conversion component provided by an embodiment of the present application.
  • FIG. 14 is a schematic structural diagram of still another fluorescence conversion component provided by an embodiment of the present application.
  • 15 is a schematic structural diagram of still another fluorescence conversion component provided by an embodiment of the present application.
  • FIG. 16 is a schematic structural diagram of still another fluorescence conversion component provided by an embodiment of the present application.
  • FIG. 17 is a flowchart of a method for manufacturing a fluorescence conversion component according to an embodiment of the present application.
  • FIG. 19 is a flowchart of yet another method for manufacturing a fluorescence conversion component provided by an embodiment of the present application.
  • 20 is a schematic structural diagram of a fluorescence conversion component provided by another embodiment of the present application.
  • FIG. 21 is a schematic structural diagram of another fluorescence conversion component provided by another embodiment of the present application.
  • FIG. 22 is a schematic structural diagram of yet another fluorescence conversion component provided by another embodiment of the present application.
  • FIG. 23 is a schematic structural diagram of still another fluorescence conversion component provided by another embodiment of the present application.
  • FIG. 24 is a schematic structural diagram of still another fluorescence conversion component provided by another embodiment of the present application.
  • FIG. 25 is a schematic structural diagram of still another fluorescence conversion component provided by another embodiment of the present application.
  • FIG. 26 is a schematic structural diagram of still another fluorescence conversion component according to another embodiment of the present application.
  • FIG. 27 is a schematic structural diagram of still another fluorescence conversion component provided by another embodiment of the present application.
  • FIG. 28 is a schematic structural diagram of still another fluorescence conversion component provided by another embodiment of the present application.
  • FIG. 29 is a schematic structural diagram of still another fluorescence conversion component provided by another embodiment of the present application.
  • FIG. 30 is a schematic structural diagram of still another fluorescence conversion component provided by another embodiment of the present application.
  • FIG. 31 is a schematic structural diagram of still another fluorescence conversion component provided by another embodiment of the present application.
  • FIG. 32 is a schematic structural diagram of still another fluorescence conversion component provided by another embodiment of the present application.
  • FIG. 33 is a schematic structural diagram of still another fluorescence conversion component provided by another embodiment of the present application.
  • FIG. 34 is a schematic structural diagram of still another fluorescence conversion component provided by another embodiment of the present application.
  • 35 is a schematic structural diagram of still another fluorescence conversion component provided by another embodiment of the present application.
  • FIG. 36 is a flowchart of a method for manufacturing a fluorescence conversion component according to another embodiment of the present application.
  • FIG. 37 is a flowchart of another method for manufacturing a fluorescence conversion component according to another embodiment of the present application.
  • FIG. 38 is a flowchart of yet another method for manufacturing a fluorescence conversion component according to another embodiment of the present application.
  • FIG. 39 is a schematic structural diagram of a light source device provided by an embodiment of the present application.
  • FIG. 40 is a schematic structural diagram of a display system provided by an embodiment of the present application.
  • Fig. 1 is a schematic structural diagram of a fluorescence conversion component provided by an embodiment of the present application.
  • the fluorescence conversion component 00 may include: a fluorescence conversion component 001, a carrying component 002, a heat conduction layer 003 and a solder layer 004.
  • the fluorescence conversion component 001 may include: a fluorescence conversion material layer 0011 and a reflective layer 0012 that are stacked.
  • the carrier component 002 may include: a carrier substrate 0021.
  • the solder layer 004 may be located between the fluorescence conversion component 001 and the carrier component 002, and the fluorescence conversion component 001 and the carrier component 002 may be soldered through the solder layer 004.
  • the thermally conductive layer 003 may be located in the fluorescence conversion component 001, or, referring to FIG. 2, the thermally conductive layer 003 may also be located on the carrier substrate 0021.
  • the fluorescence conversion material layer 0011 can generate fluorescence under the irradiation of a laser beam, and the fluorescence can be reflected by the reflective layer 0012 and then irradiated on the display assembly.
  • the reflective layer 0012 can be located between the fluorescence conversion material layer 0011 and the thermal conductive layer 003, so as to ensure that the reflective layer 0012 can effectively reflect the fluorescence generated by the fluorescence conversion material layer 0011.
  • the heat-conducting layer 003 is provided in the fluorescence conversion component 00 in the embodiment of the present application, the heat generated after the fluorescence conversion material layer 0011 is irradiated by the laser beam can be conducted to each area of the heat-conducting layer 003, and each area of the fluorescence conversion component 00 The heat difference is small to avoid the low heat conversion efficiency of the fluorescence conversion material layer 0011 due to the high heat in the area irradiated by the laser beam in the fluorescence conversion component 00, thereby affecting the display effect of the display system.
  • the embodiments of the present application provide a fluorescence conversion component, which may include: a fluorescence conversion component, a carrying component, a heat conduction layer, and a solder layer.
  • the heat generated after the fluorescence conversion material layer in the fluorescence conversion component is irradiated by the laser beam can be conducted to each area of the heat-conducting layer, avoiding the problem of high temperature in local areas of the fluorescence conversion material layer, and ensuring the conversion of the fluorescence conversion material layer
  • the efficiency of fluorescence ensures the display effect of the display system.
  • the material of the heat conduction layer 003 may be a metal with high heat conduction efficiency.
  • the material of the thermal conductive layer 003 may include at least one of silver, copper, gold, and aluminum. Silver, copper, gold and aluminum have high thermal conductivity.
  • the heat generated after the fluorescence conversion material layer 0011 is irradiated by the laser beam can be quickly transferred to the various areas of the thermal conductivity layer 003, reducing the fluorescence conversion material layer 0011 being irradiated by the laser beam
  • the temperature in the region not only can prevent the local temperature of the fluorescence conversion material layer 0011 from being high, but also can improve the heat dissipation capacity of the fluorescence conversion component.
  • the material of the thermal conductive layer 003 may be copper or gold. Considering the high cost of gold, the material of the thermal conductive layer 003 provided in the embodiment of the present application may be copper. Of course, the material of the thermal conductive layer 003 in the embodiment of the present application may also be other materials with thermal conductivity, which is not limited in the embodiment of the present application.
  • the thickness of the thermally conductive layer 003 may range from 10 ⁇ m (micrometers) to 200 ⁇ m.
  • the thickness of the thermally conductive layer 003 may be 100 ⁇ m.
  • the material of the solder layer 004 may include: gold-tin alloy or sintered silver.
  • the material of the solder layer 004 is a gold-tin eutectic alloy including 80% by mass of gold and 20% by mass of tin, that is, Au80Sn20.
  • the solder layer 004 may also be referred to as a gold-tin eutectic layer.
  • the thickness of the solder layer 004 may range from 10 ⁇ m to 100 ⁇ m.
  • the thickness of the solder layer 004 may be 50 ⁇ m.
  • the material of the fluorescence conversion material layer 0011 may include: yttrium aluminum garnet (YAG) phosphor and ceramics.
  • the material of the fluorescence conversion material layer 0011 may only include YAG phosphor.
  • the YAG phosphor in the fluorescence conversion material layer 0011 can generate fluorescence under the irradiation of the laser beam.
  • the red YAG phosphor in the fluorescence conversion material layer 0011 can generate red fluorescence under the irradiation of a laser beam, that is, the generation wavelength range is 625 nm (nanometers) Fluorescence to 740nm.
  • the thickness of the fluorescence conversion material layer 0011 may range from 0.05 mm (millimeters) to 1 mm.
  • the thickness of the fluorescence conversion material layer 0011 may be 0.5 mm.
  • the material of the fluorescence conversion material layer 0011 may include YAG phosphors of multiple different colors, and the YAG phosphor of each color may be located in a different area of the fluorescence conversion material layer 0011, so that the laser beam is irradiated to the In different regions of the fluorescence conversion material layer 0011, different colors of fluorescence are generated.
  • the material of the fluorescence conversion material layer 0011 may include red YAG phosphor and green YAG phosphor.
  • red fluorescence can be generated, and when the laser beam is irradiated to the green YAG phosphor In the area of YAG phosphor, green fluorescence can be produced.
  • the material of the reflective layer 0012 may include: medium or metal.
  • the reflective layer 0012 can be used to reflect the fluorescence generated by the fluorescence conversion material layer 0011 under the irradiation of the laser beam.
  • the material of the reflective layer 0012 may be a medium.
  • the emission layer 0042 can be used to reflect the red fluorescence, that is, the fluorescence with a reflection wavelength range of 625 nm to 740 nm.
  • the thickness of the reflective layer 0012 may range from 0.5 ⁇ m to 10 ⁇ m.
  • the thickness of the reflective layer 0012 may be 5 ⁇ m.
  • the material of the carrier substrate 0021 may include: metal.
  • the material of the carrier substrate 0021 may be aluminum or tungsten copper alloy.
  • the carrier substrate 0021 may also be referred to as an aluminum substrate or a tungsten copper substrate.
  • the material of the carrying substrate 0021 may also include non-metallic materials that can meet the carrying requirements.
  • the material of the carrying substrate 0021 may be alumina or ceramic. Wherein, the alumina may be referred to as sapphire, and the carrier substrate 0021 may be referred to as a sapphire substrate or a ceramic substrate.
  • the thickness of the carrier substrate 0021 may range from 0.1 mm to 2 mm.
  • the diameter D of the carrier substrate 0021 may range from 20 mm to 120 mm.
  • the thickness of the carrier substrate 0021 may be 1 mm.
  • the diameter D of the carrier substrate 0021 may be 100 mm.
  • the diameter D of the carrier substrate 0021 may be the length of the carrier substrate 0021 along the first direction X, and the first direction X may be perpendicular to the thermal conductive layer 003, the fluorescence conversion material layer 0011, the reflective layer 0012, and the solder layer 004 Stacking direction.
  • the thermally conductive layer 003 when the thermally conductive layer 003 is located in the fluorescence conversion component 001, the solder layer 004, the thermally conductive layer 003, the reflective layer 0012, and the fluorescence conversion material layer 0011 may be along a direction away from the carrier substrate 0021
  • the settings are stacked in sequence.
  • the solder layer 004 can be used for soldering the carrier substrate 0021 and the thermal conductive layer 003 on both sides of the solder layer 004.
  • the thermally conductive layer 003 when the thermally conductive layer 003 is located on the carrier substrate 0021, the thermally conductive layer 003, the solder layer 004, the reflective layer 0012, and the fluorescence conversion material layer 0011 may be along a direction away from the carrier substrate 0021
  • the settings are stacked in sequence.
  • the solder layer 004 can be used to solder the thermal conductive layer 0013 and the reflective layer 0012 on both sides of the solder layer 004.
  • the fluorescence conversion component 00 may further include: a first metal solderable layer 005. 3, the first metal solderable layer 005 may be located between the solder layer 004 and the thermal conductive layer 003, and the solder layer 004 may be used to solder the first metal solderable layer 005 and the carrier substrate on both sides of the solder layer 004 0021. Or, referring to FIG. 4, the first metal solderable layer 005 may be located between the solder layer 004 and the reflective layer 0012, and the solder layer 004 may be used for soldering the thermal conductive layer 003 and the first metal layer on both sides of the solder layer 004. Welding layer 005.
  • the fluorescence conversion component 00 may further include: a first solder resist layer 006.
  • the first solder resist layer 006 may be located on the side of the first metal solderable layer 005 away from the solder layer 004. That is, referring to FIG. 5, the first solder resist layer 006 may be located between the first metal solderable layer 005 and the thermal conductive layer 003, and the solder layer 004 may be used to solder the carrier substrate 0021 on both sides of the solder layer 004 And the first metal solderable layer 005. Or, referring to FIG.
  • the first solder resist layer 006 may be located between the first metal solderable layer 005 and the reflective layer 0012, and the solder layer 004 may be used to solder the thermally conductive layer 003 and the second layer on both sides of the solder layer 004.
  • the fluorescence conversion component 00 may further include: a second metal solderable layer 007.
  • the second metal solderable layer 007 is located on one side of the carrier substrate 0021, that is, the second metal solderable layer 007 may be located between the carrier substrate 0021 and the solder layer 004, and the solder layer 004 may be used for The thermal conductive layer 003 and the second metal solderable layer 007 located on both sides of the solder layer 004 are soldered.
  • FIG. 7 the second metal solderable layer 007 is located on one side of the carrier substrate 0021, that is, the second metal solderable layer 007 may be located between the carrier substrate 0021 and the solder layer 004, and the solder layer 004 may be used for The thermal conductive layer 003 and the second metal solderable layer 007 located on both sides of the solder layer 004 are soldered.
  • FIG. 1 the thermal conductive layer 003 and the second metal solderable layer
  • the second metal solderable layer 007 may be located on the side of the thermal conductive layer 003 away from the carrier substrate 0021, that is, the second metal solderable layer 007 may be located between the thermal conductive layer 003 and the solder layer 004,
  • the solder layer 004 can be used to solder the reflective layer 0012 and the second metal solderable layer 007 on both sides of the solder layer 004.
  • the fluorescence conversion component 00 may further include: a second solder resist layer 008.
  • the second solder resist layer 008 may be located on a side of the second metal solderable layer 007 close to the carrier substrate 0021. 9, the second solder resist layer 008 may be located between the second metal solderable layer 007 and the carrier substrate 0021, and the solder layer 004 may be used to solder the thermal conductive layer 003 and the second metal on both sides of the solder layer 004 Solderable layer 007.
  • the second solder resist layer 008 may be located between the second metal solderable layer 007 and the thermal conductive layer 003, and the solder layer 004 may be used to solder the reflective layer 0012 and the second metal on both sides of the solder layer 004 Solderable layer 007.
  • the fluorescence conversion component 00 may also include a first metal solderable layer 005, a first solder resist layer 006, a second metal solderable layer 007, and a second solder resist layer 008 at the same time.
  • the layer 004 can be used to weld the first metal solderable layer 005 and the second metal solderable layer 007 located on both sides of the solder layer 004.
  • the solder layer 004 can be prevented from being soldered on the solder layer 004.
  • the structural layers on both sides are used, the structural layers on both sides of the solder layer 004 are damaged, and the quality of the fluorescence conversion component 00 is guaranteed.
  • the material of the first solder resist layer 006 and the second solder resist layer 008 may include at least one of nickel or titanium. Due to the good thermal conductivity of nickel, the material of the first solder resist layer 006 and the second solder resist layer 008 can be nickel, and the heat generated after the fluorescence conversion material layer 0011 is irradiated by the laser beam can also be transferred to the first solder resist layer 006 and the second solder resist layer 008. The solder resist layer 006 and the second solder resist layer 008 further improve the heat dissipation capability of the fluorescence conversion component.
  • the thickness of the first solder resist layer 006 and the second solder resist layer 008 may range from 0.1 ⁇ m to 5 ⁇ m.
  • the thickness of the first solder resist layer 006 and the second solder resist layer 008 may both be 3 ⁇ m.
  • the material of the first metal solderable layer 005 and the second metal solderable layer 007 may include gold.
  • the thickness of the first metal solderable layer 005 and the second metal solderable layer 007 may range from 0.1 ⁇ m to 2 ⁇ m.
  • the thickness of the first metal solderable layer 005 and the second metal solderable layer 007 may both be 1 ⁇ m.
  • the reflective layer 0012 and the fluorescence conversion material layer 0011 may be stacked in a direction away from the carrier substrate 0021.
  • the reflective layer 0012 and the fluorescence conversion material layer 0011 may be stacked in a direction away from the carrier substrate 0021.
  • the orthographic projection of the thermal conductive layer 003 on the carrier substrate 0021 may overlap with the orthographic projection of the fluorescence conversion material layer 0011 on the carrier substrate 0021. That is, the area where the heat generated after the fluorescence conversion material layer 0011 is irradiated by the laser beam can be conducted is the same as the area where the orthographic projection of the fluorescence conversion material layer 0011 on the carrier substrate 0021 is located.
  • the orthographic projection of the fluorescence conversion material layer 0011 on the carrier substrate 0021 may be within the orthographic projection of the thermal conductive layer 003 on the carrier substrate 0021. That is, the area of the orthographic projection of the fluorescence conversion material layer 0011 on the carrier substrate 0021 is located in the area where the heat generated after the fluorescence conversion material layer 0011 is irradiated by the laser beam can be conducted, and the heat can be conducted in a larger range. The heat dissipation capacity of the fluorescence conversion component 00 is increased.
  • the area of the orthographic projection of the thermally conductive layer 003 on the carrier substrate 0021 may be one to three times the area of the orthographic projection of the fluorescence conversion material layer 0011 on the carrier substrate 0021.
  • FIG. 14 is a schematic structural diagram of still another fluorescence conversion component provided by an embodiment of the present application.
  • FIG. 15 is a schematic structural diagram of still another fluorescence conversion component provided by an embodiment of the present application.
  • the fluorescence conversion component 00 may further include: an optical antireflection film 009.
  • the optical antireflection film 009 may be located on the side of the fluorescence conversion material layer 0011 away from the reflective layer 0012.
  • the optical antireflection film 009 can effectively prevent the color corresponding to the laser beam from being reflected.
  • the laser beam is a blue laser beam
  • the optical antireflection film 009 can prevent blue light from being reflected, that is, to prevent light with a wavelength range of 420 nm to 470 nm from being reflected.
  • the thickness of the optical antireflection film 009 may range from 0.5 ⁇ m to 10 ⁇ m.
  • the thickness of the optical antireflection film 009 may be 5 ⁇ m.
  • FIG. 16 is a schematic structural diagram of still another fluorescence conversion component provided by an embodiment of the present application.
  • the fluorescence conversion component 00 may further include: a driving assembly 010.
  • the driving component 010 can be connected to the carrier substrate 0021, and the driving component 010 can be used to drive the carrier substrate 0021, the solder layer 004, the heat conducting layer 003 and the fluorescence conversion component 001 to rotate.
  • the driving component 010 may be located on the side of the carrier substrate 0021 away from the fluorescence conversion component 001 and connected to the carrier substrate 0021.
  • the driving component 010 may be a driving motor or a driving motor.
  • the embodiment of the present application does not limit the specific implementation form of the driving component 010.
  • the fluorescence conversion component 001 can be driven to rotate at a higher speed, so as to avoid the high heat in the area irradiated by the laser beam in the fluorescence conversion material layer 0011 resulting in the fluorescence conversion material layer.
  • 0011 has poor efficiency in converting fluorescence.
  • the embodiments of the present application provide a fluorescence conversion component, which may include: a fluorescence conversion component, a carrying component, a heat conduction layer, and a solder layer.
  • the heat generated after the fluorescence conversion material layer in the fluorescence conversion component is irradiated by the laser beam can be conducted to each area of the heat-conducting layer, avoiding the problem of high temperature in local areas of the fluorescence conversion material layer, and ensuring the conversion of the fluorescence conversion material layer
  • the efficiency of fluorescence ensures the display effect of the display system.
  • FIG. 17 is a flowchart of a method for manufacturing a fluorescence conversion component provided by an embodiment of the present application. It can be seen with reference to FIG. 17 that the method may include:
  • Step 101 Provide a fluorescence conversion component, a carrying component, and a thermal conductive layer.
  • the fluorescence conversion component 001 may include a fluorescence conversion material layer 0011 and a reflective layer 0012 that are stacked, and the carrier component 002 may include a carrier substrate 0021.
  • Step 102 Provide a solder layer.
  • Step 103 Weld the fluorescence conversion component and the carrier component through the solder layer.
  • the solder layer 004 may be disposed between the reflective layer 0012 and the carrier substrate 0021, the thermally conductive layer 003 may be located in the fluorescence conversion component 001, or the thermally conductive layer 003 may be located on the carrier substrate 0021.
  • the fluorescence conversion material layer 0011 can generate fluorescence under the irradiation of a laser beam. The fluorescence can be reflected by the reflective layer 0012 and then irradiated on the display assembly. The reflection layer 0012 can effectively reflect the fluorescence generated by the fluorescence conversion material layer 0011.
  • the fluorescence conversion component 00 manufactured by the manufacturing method provided in the embodiments of the present application is provided with a heat-conducting layer 003.
  • the heat generated by the fluorescence conversion material layer 0011 after being irradiated by the laser beam can be conducted to various regions of the heat-conducting layer 003.
  • the fluorescence conversion The heat difference of each area of the component 00 is small, so as to avoid that the high heat of the area irradiated by the laser beam in the fluorescence conversion component 00 results in poor fluorescence conversion efficiency of the fluorescence conversion material layer 0011, thereby affecting the display effect of the display system.
  • the embodiments of the present application provide a method for manufacturing a fluorescence conversion component, the fluorescence conversion component including: a fluorescence conversion component, a carrier component, and a heat conductive layer.
  • the fluorescence conversion component includes a fluorescence conversion material layer and a reflective layer.
  • the heat generated after the fluorescence conversion material layer is irradiated by the laser beam can be conducted to various areas of the heat-conducting layer, avoiding the problem of high temperature in local areas of the fluorescence conversion material layer, and ensuring the efficiency of the fluorescence conversion material layer to convert fluorescence.
  • the display effect of the system is better.
  • FIG. 18 is a flowchart of another method for manufacturing a fluorescence conversion component provided by an embodiment of the present application. As can be seen with reference to FIG. 18, the method may include:
  • Step 201 Form a fluorescence conversion material layer by crystal growth.
  • YAG phosphors and ceramics may be used to form the fluorescence conversion material layer 0011 through crystal growth, and the fluorescence conversion material layer 0011 may also be referred to as a ceramic fluorescence conversion material layer.
  • the fluorescence conversion material layer 0011 may also be referred to as a single crystal fluorescence conversion material layer.
  • YAG phosphors and ceramics can also be used to form the fluorescence conversion material layer 0011 through high-temperature sintering.
  • YAG phosphors and ceramics can also be used to form the fluorescence conversion material layer 0011 through high-temperature sintering.
  • only YAG phosphors can be used to form the fluorescence conversion material layer 0011 through high-temperature sintering.
  • the embodiment of the present application does not limit the material and method for forming the fluorescence conversion material layer 0011.
  • Step 202 forming an optical antireflection film on one side of the fluorescence conversion material layer.
  • the optical antireflection film 009 may be formed on one side of the fluorescence conversion material layer 0011 by evaporation or sputtering.
  • the optical antireflection film 009 can effectively prevent the color corresponding to the laser beam from being reflected.
  • the optical antireflection film 009 can effectively prevent blue light from being reflected.
  • the optical antireflection film 008 may not be formed on one side of the fluorescence conversion material layer 0011.
  • the fluorescence conversion material layer 0011 may be formed.
  • the roughening treatment is performed on the side close to the laser beam to increase the roughness of the side of the fluorescence conversion material layer 0011 close to the laser beam, thereby reducing the reflection of the laser beam.
  • Step 203 Electroplating a reflective layer on the side of the fluorescence conversion material layer away from the optical antireflection film.
  • the material of the reflective layer 0012 may include: medium or metal.
  • the reflective layer 0012 can be formed on the side of the fluorescence conversion material layer 0011 away from the optical antireflection film 009 by electroplating.
  • the reflective layer 0012 can be formed on the side of the fluorescence conversion material layer 0011 away from the optical antireflection film 009 by evaporation or sputtering.
  • the reflective layer 0012 can be used to reflect the fluorescence generated by the fluorescence conversion material layer 0011 under the irradiation of the laser beam.
  • Step 204 forming a thermally conductive layer on the side of the reflective layer away from the fluorescence conversion material layer.
  • the thermal conductive layer 003 may be formed on the side of the reflective layer 0012 away from the fluorescence conversion material layer 0011 by means of electroplating or vapor deposition.
  • the thermal conductivity layer 003 has a high thermal conductivity. The heat generated by the fluorescence conversion material layer 0011 after being irradiated by the laser beam can be quickly transferred to the various regions of the thermal conductivity layer 003, which can avoid the high local temperature of the fluorescence conversion material layer 0011 and improve the fluorescence.
  • the heat dissipation capacity of the conversion component may be formed on the side of the reflective layer 0012 away from the fluorescence conversion material layer 0011 by means of electroplating or vapor deposition.
  • the thermal conductivity layer 003 has a high thermal conductivity. The heat generated by the fluorescence conversion material layer 0011 after being irradiated by the laser beam can be quickly transferred to the various regions of the thermal conductivity layer 003, which can avoid the high local temperature of the fluorescence conversion
  • Step 205 forming a first solder resist layer on the side of the thermal conductive layer away from the reflective layer.
  • nickel may be used to form the first solder resist layer 006 on the side of the thermal conductive layer 003 away from the reflective layer 0012 by electroplating or vapor deposition. Due to the good thermal conductivity of nickel, the heat generated after the fluorescence conversion material layer 0011 is irradiated by the laser beam can also be transferred to the first solder resist layer 006, which further improves the heat dissipation capability of the fluorescence conversion component.
  • Step 206 forming a first metal solderable layer on the side of the first solder resist layer away from the thermal conductive layer.
  • the first metal solderable layer 005 may be formed on the side of the first solder resist layer 006 away from the thermal conductive layer 003 by means of electroplating or vapor deposition of gold.
  • Step 207 forming a second solder resist layer on one side of the carrier substrate.
  • nickel may be used to form the second solder resist layer 008 on one side of the carrier substrate 0021 by electroplating or vapor deposition. Due to the good thermal conductivity of nickel, the heat generated after the fluorescence conversion material layer 0011 is irradiated by the laser beam can also be transferred to the second solder resist layer 008, which further improves the heat dissipation capability of the fluorescence conversion component.
  • Step 208 Form a second solderable metal layer on the side of the second solder resist layer away from the carrier substrate.
  • the second solderable metal layer 007 may be formed on the side of the second solder resist layer 008 away from the carrier substrate 0021 by electroplating or vapor deposition of gold.
  • Step 209 Provide a solder layer.
  • the solder layer may be a gold-tin alloy composed of 80% by mass of gold and 20% by mass of tin, and the solder layer 004 may also be referred to as a gold-tin eutectic layer.
  • Step 210 The solder layer is heated, and the first metal solderable layer and the second metal solderable layer are soldered through the solder layer.
  • the solder layer 004 can be first disposed between the first metal solderable layer 005 and the second metal solderable layer 007, and then the solder layer 004 can be heated, and the first metal can be soldered through the solder layer 004
  • the layer 005 and the second metal weldable layer 007 are welded to ensure the quality of the manufactured fluorescence conversion component 00.
  • FIG. 19 is a flowchart of another method for manufacturing a fluorescence conversion component provided by an embodiment of the present application. It can be seen with reference to FIG. 19 that the method may include:
  • Step 301 Form a fluorescence conversion material layer by crystal growth.
  • Step 302 forming an optical antireflection film on one side of the fluorescence conversion material layer.
  • Step 303 forming a reflective layer on the side of the fluorescence conversion material layer away from the optical antireflection film.
  • Step 304 forming a first solder resist layer on the side of the thermal conductive layer away from the reflective layer.
  • Step 305 forming a first metal solderable layer on the side of the first solder resist layer away from the reflective layer.
  • Step 306 forming a thermally conductive layer on one side of the carrier substrate.
  • Step 307 forming a second solder resist layer on the side of the thermal conductive layer away from the carrier substrate.
  • Step 308 forming a second metal solderable layer on the side of the second solder resist layer away from the thermal conductive layer.
  • Step 309 Provide a solder layer.
  • Step 310 The solder layer is heated, and the first metal solderable layer and the second metal solderable layer are soldered through the solder layer.
  • step 301 to step 310 can refer to the above-mentioned step 201 to step 210, which is not repeated here in the embodiment of the present application.
  • step 207 to step 209 can be executed before step 201
  • step 306 to step 309 can be executed before step 301
  • step 202 and step 302 can be deleted according to the situation.
  • the embodiments of the present application provide a method for manufacturing a fluorescence conversion component, the fluorescence conversion component including: a fluorescence conversion component, a carrying component, and a thermal conductive layer.
  • the heat generated after the fluorescence conversion material layer in the fluorescence conversion component is irradiated by the laser beam can be conducted to various areas of the heat-conducting layer, avoiding the problem of high temperature in local areas of the fluorescence conversion material layer, and ensuring that the fluorescence conversion material layer converts fluorescence The efficiency of the display system is better.
  • FIG. 20 is a schematic structural diagram of a fluorescence conversion component provided in an embodiment of the present application.
  • the fluorescence conversion component 00 may include: a fluorescence conversion component 001, a carrying component 002, and a thermal conductive layer 003.
  • the fluorescence conversion component 001 may include: a phosphor layer 0011, a reflective layer 0012, and a solder layer 0013 that are stacked.
  • the carrier component 002 may include: a carrier substrate 0021.
  • the fluorescence conversion component 001 can be welded to the carrier component 002 through a solder layer 0013.
  • the thermally conductive layer 003 may be located in the fluorescence conversion component 001, or the thermally conductive layer 003 may also be located on the carrier substrate 0021.
  • the phosphor layer 0011 can generate fluorescence under the irradiation of a laser beam, and the fluorescence can be reflected by the reflective layer 0012 and then irradiated on the display assembly.
  • the reflective layer 0012 may be located between the phosphor layer 0011 and the thermal conductive layer 003, so as to ensure that the reflective layer 0012 can effectively reflect the fluorescence generated by the phosphor layer 0011. Therefore, a fluorescence conversion component provided by an embodiment of the present application includes: a carrier substrate, a welding structure layer, a heat conduction layer, and a fluorescence conversion component.
  • the heat generated after the phosphor layer in the fluorescence conversion component is irradiated by the laser beam can be conducted to various areas of the thermally conductive layer, avoiding the problem of high temperature in local areas of the phosphor layer, and ensuring the phosphor layer's efficiency in converting fluorescence , And then ensure the display effect of the display system.
  • the material of the heat conduction layer 003 may be a metal with high heat conduction efficiency.
  • the material of the thermal conductive layer 003 may include at least one of silver, copper, gold, and aluminum. Silver, copper, gold and aluminum have high thermal conductivity.
  • the heat generated by the phosphor layer 0011 after being irradiated by the laser beam can be quickly transferred to the various areas of the thermal conductive layer 003, reducing the area where the phosphor layer 0011 is irradiated by the laser beam
  • the temperature can not only prevent the local temperature of the phosphor layer 0011 from being high, but also improve the heat dissipation capacity of the fluorescence conversion component.
  • the material of the thermal conductive layer 003 may be copper or gold. Considering the high cost of gold, the material of the thermal conductive layer 003 provided in the embodiment of the present application may be copper. Of course, the material of the thermal conductive layer 003 in the embodiment of the present application may also be other materials with thermal conductivity, which is not limited in the embodiment of the present application.
  • the thickness of the thermally conductive layer 003 may range from 10 ⁇ m (micrometers) to 200 ⁇ m.
  • the thickness of the thermally conductive layer 003 may be 100 ⁇ m.
  • the material of the solder layer 0013 may include: gold-tin alloy or sintered silver.
  • the material of the solder layer 0013 is a gold-tin eutectic alloy including 80% by mass of gold and 20% by mass of tin, that is, Au80Sn20.
  • the solder layer 0013 may also be referred to as a gold-tin eutectic layer.
  • the thickness of the solder layer 0013 may range from 10 ⁇ m to 100 ⁇ m.
  • the thickness of the solder layer 0013 may be 50 ⁇ m.
  • the material of the phosphor layer 0011 may include: yttrium aluminum garnet (YAG) phosphor and ceramics.
  • the material of the phosphor layer 0011 may only include YAG phosphor.
  • the YAG phosphor in the phosphor layer 0011 can generate fluorescence under the irradiation of the laser beam.
  • the red YAG phosphor in the phosphor layer 0011 can generate red fluorescence under the irradiation of the laser beam, that is, the wavelength range is 625nm (nanometer) to 740nm ⁇ Fluorescence.
  • the thickness of the phosphor layer 0011 may range from 0.05 mm (millimeters) to 1 mm.
  • the thickness of the phosphor layer 0011 may be 0.5 mm.
  • the material of the phosphor layer 0011 may include YAG phosphors of multiple different colors, and the YAG phosphor of each color may be located in a different area of the phosphor layer 0011, so that the laser beam is irradiated to the phosphor. Different areas of the layer 0011 produce different colors of fluorescence.
  • the material of the phosphor layer 0011 may include red YAG phosphor and green YAG phosphor.
  • red fluorescence can be generated, and when the laser beam is irradiated to the area where the green YAG is provided When the area of the phosphor powder, it can produce green fluorescence.
  • the material of the reflective layer 0012 may include: medium or metal.
  • the reflective layer 0012 can be used to reflect the fluorescence generated by the phosphor layer 0011 under the irradiation of the laser beam.
  • the material of the reflective layer 0012 may be a medium.
  • the emission layer 0042 can be used to reflect the red fluorescence, that is, the fluorescence having a reflection wavelength range of 625 nm to 740 nm.
  • the thickness of the reflective layer 0012 may range from 0.5 ⁇ m to 10 ⁇ m.
  • the thickness of the reflective layer 0012 may be 5 ⁇ m.
  • the material of the carrier substrate 0021 may include: metal.
  • the material of the carrier substrate 0021 may be aluminum or tungsten copper alloy.
  • the carrier substrate 0021 may also be referred to as an aluminum substrate or a tungsten copper substrate.
  • the material of the carrying substrate 0021 may also include non-metallic materials that can meet the carrying requirements.
  • the material of the carrying substrate 0021 may be alumina or ceramic. Wherein, the alumina may be referred to as sapphire, and the carrier substrate 0021 may be referred to as a sapphire substrate or a ceramic substrate.
  • the thickness of the carrier substrate 0021 may range from 0.1 mm to 2 mm.
  • the diameter D of the carrier substrate 0021 may range from 20 mm to 120 mm.
  • the thickness of the carrier substrate 0021 may be 1 mm.
  • the diameter D of the carrier substrate 0021 may be 100 mm.
  • the diameter D of the carrier substrate 0021 may be the length of the carrier substrate 0021 along the first direction X, and the first direction X may be perpendicular to the thermal conductive layer 003, the phosphor layer 0011, the reflective layer 0012, and the stack of the solder layer 0013 direction.
  • the thermally conductive layer 003 when the thermally conductive layer 003 is located in the fluorescence conversion component 001, the solder layer 0013, the thermally conductive layer 003, the reflective layer 0012, and the phosphor layer 0011 may be sequentially along a direction away from the carrier substrate 0021. Cascading settings.
  • the solder layer 0013 can be used to solder the carrier substrate 0021 and the thermal conductive layer 003 on both sides of the solder layer 0013.
  • the thermally conductive layer 003 when the thermally conductive layer 003 is located on the carrier substrate 0021, the thermally conductive layer 003, the solder layer 0013, the reflective layer 0012, and the phosphor layer 0011 may be sequentially along a direction away from the carrier substrate 0021. Cascading settings.
  • the solder layer 0013 can be used to solder the thermal conductive layer 0013 and the reflective layer 0012 on both sides of the solder layer 0013.
  • the fluorescence conversion component 00 may further include: a first metal solderable layer 004. 22, the first metal solderable layer 004 may be located between the solder layer 0013 and the thermal conductive layer 003, and the solder layer 0013 may be used to solder the first metal solderable layer 004 on both sides of the solder layer 0013 and the carrier substrate 0021. Alternatively, referring to FIG. 23, the first metal solderable layer 004 may be located between the solder layer 0013 and the reflective layer 0012, and the solder layer 0013 may be used for soldering the thermal conductive layer 003 and the first metal layer on both sides of the solder layer 0013. Welding layer 004.
  • the fluorescence conversion component 00 may further include: a first solder resist layer 005.
  • the first solder resist layer 005 may be located on the side of the first metal solderable layer 004 away from the solder layer 0013. That is, referring to FIG. 24, the first solder resist layer 005 may be located between the first metal solderable layer 004 and the thermal conductive layer 003, and the solder layer 0013 may be used to solder the carrier substrate 0021 on both sides of the solder layer 0013. And the first metal solderable layer 004.
  • FIG. 24 the first solder resist layer 005 may be located on the side of the first metal solderable layer 004 away from the solder layer 0013. That is, referring to FIG. 24, the first solder resist layer 005 may be located between the first metal solderable layer 004 and the thermal conductive layer 003, and the solder layer 0013 may be used to solder the carrier substrate 0021 on both sides of the solder layer 0013.
  • the first solder resist layer 005 may be located between the first metal solderable layer 004 and the reflective layer 0012, and the solder layer 0013 may be used to solder the thermally conductive layer 003 and the second layer located on both sides of the solder layer 0013.
  • the fluorescence conversion component 00 may further include: a second metal solderable layer 006.
  • the second metal solderable layer 006 is located on one side of the carrier substrate 0021, that is, the second metal solderable layer 006 may be located between the carrier substrate 0021 and the solder layer 0013, and the solder layer 0013 may be used for The thermal conductive layer 003 and the second metal solderable layer 006 located on both sides of the solder layer 0013 are soldered.
  • FIG. 26 the second metal solderable layer 006 is located on one side of the carrier substrate 0021, that is, the second metal solderable layer 006 may be located between the carrier substrate 0021 and the solder layer 0013, and the solder layer 0013 may be used for The thermal conductive layer 003 and the second metal solderable layer 006 located on both sides of the solder layer 0013 are soldered.
  • the second metal solderable layer 006 may be located on the side of the thermal conductive layer 003 away from the carrier substrate 0021, that is, the second metal solderable layer 006 may be located between the thermal conductive layer 003 and the solder layer 0013,
  • the solder layer 0013 can be used to solder the reflective layer 0012 and the second metal solderable layer 006 on both sides of the solder layer 0013.
  • the fluorescence conversion component 00 may further include: a second solder resist layer 007.
  • the second solder resist layer 007 may be located on a side of the second metal solderable layer 006 close to the carrier substrate 0021. 28, the second solder resist layer 007 may be located between the second metal solderable layer 006 and the carrier substrate 0021, and the solder layer 0013 may be used to solder the thermal conductive layer 003 and the second metal on both sides of the solder layer 0013 Solderable layer 006.
  • the second solder resist layer 007 may be located between the second metal solderable layer 006 and the thermal conductive layer 003, and the solder layer 0013 may be used to solder the reflective layer 0012 and the second metal on both sides of the solder layer 0013 Solderable layer 006.
  • the fluorescence conversion component 00 may also include a first metal solderable layer 004, a first solder resist layer 005, a second metal solderable layer 006, and a second solder resist layer 007 at the same time.
  • the layer 0013 can be used to weld the first metal solderable layer 005 and the second metal solderable layer 006 located on both sides of the solder layer 0013.
  • the solder layer 0013 can be prevented from being soldered on the solder layer 0013.
  • the structural layers on both sides are used, the structural layers on both sides of the solder layer 0013 are damaged, and the quality of the fluorescence conversion component 00 is guaranteed.
  • the material of the first solder resist layer 005 and the second solder resist layer 007 may include at least one of nickel or titanium. Due to the good thermal conductivity of nickel, the material of the first solder resist layer 005 and the second solder resist layer 007 can be nickel, and the heat generated after the phosphor layer 0011 is irradiated by the laser beam can also be transferred to the first resist layer. The solder layer 005 and the second solder resist layer 007 further improve the heat dissipation capability of the fluorescence conversion component.
  • the thickness of the first solder resist layer 005 and the second solder resist layer 007 may range from 0.1 ⁇ m to 5 ⁇ m.
  • the thickness of the first solder resist layer 005 and the second solder resist layer 007 may both be 3 ⁇ m.
  • the material of the first metal solderable layer 004 and the second metal solderable layer 006 may include gold.
  • the thickness of the first metal solderable layer 004 and the second metal solderable layer 006 may range from 0.1 ⁇ m to 2 ⁇ m.
  • the thickness of the first metal solderable layer 004 and the second metal solderable layer 0023 may both be 1 ⁇ m.
  • the reflective layer 0012 and the phosphor layer 0011 may be stacked in a direction away from the carrier substrate 0021.
  • the reflective layer 0012 and the phosphor layer 0011 may be stacked in a direction away from the carrier substrate 0021.
  • the orthographic projection of the thermally conductive layer 003 on the carrier substrate 0021 may overlap with the orthographic projection of the phosphor layer 0011 on the carrier substrate 0021. That is, the area where the heat generated after the phosphor layer 0011 is irradiated by the laser beam can be conducted is the same as the area where the orthographic projection of the phosphor layer 0011 on the carrier substrate 0021 is located.
  • the orthographic projection of the phosphor layer 0011 on the carrier substrate 0021 may be within the orthographic projection of the thermal conductive layer 003 on the carrier substrate 0021. That is, the area of the orthographic projection of the phosphor layer 0011 on the carrier substrate 0021 is located in the area where the heat generated after the phosphor layer 0011 is irradiated by the laser beam can be conducted, and the heat can be conducted in a larger range, which increases The heat dissipation capacity of the fluorescence conversion component 00.
  • the area of the orthographic projection of the thermal conductive layer 003 on the carrier substrate 0021 may be one to three times the area of the orthographic projection of the phosphor layer 0011 on the carrier substrate 0021.
  • FIG. 33 is a schematic structural diagram of still another fluorescence conversion component provided by an embodiment of the present application.
  • FIG. 36 is a schematic structural diagram of still another fluorescence conversion component provided by an embodiment of the present application.
  • the fluorescence conversion component 00 may further include: an optical antireflection film 008.
  • the optical antireflection film 008 may be located on the side of the phosphor layer 0011 away from the reflective layer 0012.
  • the optical antireflection film 008 can effectively prevent the color corresponding to the laser beam from being reflected.
  • the laser beam is a blue laser beam
  • the optical antireflection film 008 can prevent blue light from being reflected, that is, to prevent light with a wavelength range of 420 nm to 470 nm from being reflected.
  • the thickness of the optical antireflection film 008 may range from 0.5 ⁇ m to 10 ⁇ m.
  • the thickness of the optical antireflection film 008 may be 5 ⁇ m.
  • FIG. 35 is a schematic structural diagram of still another fluorescence conversion component provided by an embodiment of the present application.
  • the fluorescence conversion component 00 may further include: a driving assembly 009.
  • the driving component 009 can be connected to the carrier substrate 0021, and the driving component 009 can be used to drive the carrier substrate 0021, the solder layer 0013, the thermal conductive layer 003 and the fluorescence conversion component 001 to rotate.
  • the driving component 009 may be located on the side of the carrier substrate 0021 away from the fluorescence conversion component 001 and connected to the carrier substrate 0021.
  • the driving component 009 may be a driving motor or a driving motor.
  • the embodiment of the present application does not limit the specific implementation form of the driving component 009.
  • the fluorescence conversion component 001 can be driven to rotate at a higher speed, so as to avoid the high heat in the phosphor layer 0011 irradiated by the laser beam, causing the phosphor layer 0011 to convert The efficiency of fluorescence is poor.
  • the embodiments of the present application provide a fluorescence conversion component, which may include: a carrier substrate, a welding structure layer, a heat conduction layer, and a fluorescence conversion component.
  • the heat generated after the phosphor layer in the fluorescence conversion component is irradiated by the laser beam can be conducted to various areas of the thermally conductive layer, avoiding the problem of high temperature in local areas of the phosphor layer, and ensuring the phosphor layer's efficiency in converting fluorescence , And then ensure the display effect of the display system.
  • FIG. 36 is a flowchart of a method for manufacturing a fluorescence conversion component according to an embodiment of the present application. With reference to Figure 36, it can be seen that the method may include:
  • Step 101 Provide a fluorescence conversion component, a carrying component, and a thermal conductive layer.
  • the fluorescence conversion component 001 may include a phosphor layer 0011 and a reflective layer 0012 that are stacked, and the carrier component 002 may include a carrier substrate 0021.
  • Step 102 forming a solder layer on the side of the reflective layer away from the phosphor layer.
  • Step 103 Weld the fluorescence conversion component and the carrier component through the solder layer.
  • the solder layer 0013 may be located on the side of the reflective layer 0012 away from the phosphor layer 0011, the thermally conductive layer 003 may be located in the fluorescence conversion component 001, or the thermally conductive layer 003 may be located on the carrier substrate 0021.
  • the phosphor layer 0011 can generate fluorescence under the irradiation of a laser beam, and the fluorescence can be reflected by the reflective layer 0012 and then irradiated on the display assembly.
  • the reflective layer 0012 can effectively reflect the fluorescence generated by the phosphor layer 0011.
  • the fluorescence conversion component 00 manufactured by the manufacturing method provided in the embodiments of the present application is provided with a thermally conductive layer 003.
  • the heat generated by the phosphor layer 0011 after being irradiated by the laser beam can be conducted to various regions of the thermally conductive layer 003.
  • the fluorescence conversion component The heat difference of each area of 00 is small, so as to avoid that the high heat of the area irradiated by the laser beam in the fluorescence conversion component 00 results in poor conversion efficiency of the phosphor layer 0011 to fluorescence, thereby affecting the display effect of the display system.
  • the embodiments of the present application provide a method for manufacturing a fluorescence conversion component, the fluorescence conversion component including: a fluorescence conversion component, a carrier component, and a heat conductive layer.
  • the fluorescence conversion component includes a phosphor layer and a reflective layer. The heat generated after the phosphor layer is irradiated by the laser beam can be conducted to various areas of the thermally conductive layer, avoiding the problem of high temperature in local areas of the phosphor layer, ensuring the efficiency of the phosphor layer to convert fluorescence, and displaying the display of the system The effect is better.
  • FIG. 37 is a flowchart of another method for manufacturing a fluorescence conversion component provided by an embodiment of the present application. It can be seen with reference to FIG. 37 that the method may include:
  • Step 201 Form a phosphor layer by crystal growth.
  • YAG phosphor and ceramic may be used to form the phosphor layer 0011 by crystal growth, and the phosphor layer 0011 may also be referred to as a ceramic phosphor layer.
  • the phosphor layer 0011 may also be referred to as a single crystal phosphor layer.
  • YAG phosphors and ceramics can also be used to form the phosphor layer 0011 by high-temperature sintering. Or, only YAG phosphor may be used to form the phosphor layer 0011 through high-temperature sintering.
  • the embodiment of the present application does not limit the material and method for forming the phosphor layer 0011.
  • Step 202 forming an optical antireflection film on one side of the phosphor layer.
  • the optical anti-reflection film 008 may be formed on one side of the phosphor layer 0011 by evaporation or sputtering.
  • the optical antireflection film 008 can effectively prevent the color corresponding to the laser beam from being reflected.
  • the optical antireflection film 008 can effectively prevent blue light from being reflected.
  • the optical anti-reflection film 008 may not be formed on one side of the phosphor layer 0011.
  • the phosphor layer 0011 may be close to the laser beam
  • the surface of the phosphor layer is roughened to increase the roughness of the side of the phosphor layer 0011 close to the laser beam, thereby reducing the reflection of the laser beam.
  • Step 203 forming a reflective layer on the side of the phosphor layer away from the optical antireflection film.
  • the material of the reflective layer 0012 may include: medium or metal.
  • the reflective layer 0012 can be formed on the side of the phosphor layer 0011 away from the optical antireflection film 008 by electroplating.
  • the material of the reflective layer 0012 is a medium, the reflective layer 0012 can be formed on the side of the phosphor layer 0011 away from the optical antireflection film 008 by evaporation or sputtering.
  • the reflective layer 0012 can be used to reflect the fluorescence generated by the phosphor layer 0011 under the irradiation of the laser beam.
  • Step 204 forming a thermally conductive layer on the side of the reflective layer away from the phosphor layer.
  • the thermal conductive layer 003 may be formed on the side of the reflective layer 0012 away from the phosphor layer 0011 by electroplating or vapor deposition.
  • the heat conduction layer 003 has a high thermal conductivity. The heat generated by the phosphor layer 0011 after being irradiated by the laser beam can be quickly transferred to various areas of the heat conduction layer 003, which can avoid the high local temperature of the phosphor layer 0011 and improve the fluorescence conversion components. The heat dissipation capacity.
  • Step 205 forming a first solder resist layer on the side of the thermal conductive layer away from the reflective layer.
  • nickel may be used to form the first solder resist layer 005 on the side of the thermal conductive layer 003 away from the reflective layer 0012 by electroplating or vapor deposition. Due to the good thermal conductivity of nickel, the heat generated after the phosphor layer 0011 is irradiated by the laser beam can also be conducted to the first solder resist layer 005, which further improves the heat dissipation capability of the fluorescence conversion component.
  • Step 206 forming a first metal solderable layer on the side of the first solder resist layer away from the thermal conductive layer.
  • the first metal solderable layer 004 can be formed on the side of the first solder resist layer 005 away from the thermal conductive layer 003 by means of electroplating or vapor deposition of gold.
  • Step 207 forming a solder layer on the side of the first metal solderable layer away from the first solder resist layer.
  • a gold-tin alloy can be used to form the solder layer 0013 on the side of the first metal solderable layer 004 away from the first solder resist layer 005 by electroplating or vapor deposition.
  • gold with a mass fraction of 80% and tin with a mass fraction of 20% can be used to form the solder layer 0013 on the side of the first metal solderable layer 004 away from the first solder resist layer 005 by electroplating or vapor deposition.
  • the solder layer 0013 can also be referred to as a gold-tin eutectic layer.
  • Step 208 Form a second solder resist layer on one side of the carrier substrate.
  • nickel may be used to form the second solder resist layer 007 on one side of the carrier substrate 0021 by electroplating or vapor deposition. Due to the good thermal conductivity of nickel, the heat generated after the phosphor layer 0011 is irradiated by the laser beam can also be conducted to the second solder resist layer 007, which further improves the heat dissipation capability of the fluorescence conversion component.
  • Step 209 Form a second solderable metal layer on the side of the second solder resist layer away from the carrier substrate.
  • the second solderable metal layer 006 may be formed on the side of the second solder resist layer 007 away from the carrier substrate 0021 by electroplating or vapor deposition of gold.
  • Step 210 The solder layer is heated, and the first metal solderable layer and the second metal solderable layer are soldered through the solder layer.
  • the solder layer 0013 Since the solder layer 0013 has been deposited and formed on the fluorescence conversion component 001, the solder layer 0013 can be heated first, and the solder layer 0013 can be laminated on the side of the second metal solderable layer 006 away from the second solder resist layer 007. That is, the first metal solderable layer 004 and the second metal solderable layer 006 are welded through the solder layer 0013 to ensure the quality of the manufactured fluorescence conversion component 00.
  • FIG. 38 is a flowchart of another method for manufacturing a fluorescence conversion component provided by an embodiment of the present application. As can be seen with reference to FIG. 38, the method may include:
  • Step 301 Form a phosphor layer by crystal growth.
  • Step 302 forming an optical antireflection film on one side of the phosphor layer.
  • Step 303 forming a reflective layer on the side of the phosphor layer away from the optical antireflection film.
  • Step 304 forming a first solder resist layer on the side of the thermal conductive layer away from the reflective layer.
  • Step 305 forming a first metal solderable layer on the side of the first solder resist layer away from the reflective layer.
  • Step 306 forming a solder layer on the side of the first metal solderable layer away from the first solder resist layer.
  • Step 307 forming a thermally conductive layer on one side of the carrier substrate.
  • Step 308 forming a second solder resist layer on the side of the thermal conductive layer away from the carrier substrate.
  • Step 309 forming a second metal solderable layer on the side of the second solder resist layer away from the thermal conductive layer.
  • Step 310 The solder layer is heated, and the first metal solderable layer and the second metal solderable layer are soldered through the solder layer.
  • step 301 to step 310 can refer to the above-mentioned step 201 to step 210, which is not repeated here in the embodiment of the present application.
  • step 208 to step 210 can be executed before step 201
  • step 307 to step 310 can be executed before step 301
  • step 202 and step 302 can be deleted according to the situation.
  • the embodiments of the present application provide a method for manufacturing a fluorescence conversion component, the fluorescence conversion component including: a fluorescence conversion component, a carrying component, and a thermal conductive layer.
  • the heat generated after the phosphor layer in the fluorescence conversion assembly is irradiated by the laser beam can be conducted to each area of the thermally conductive layer, avoiding the problem of high temperature in local areas of the phosphor layer, and ensuring the phosphor layer's efficiency in converting fluorescence.
  • the display effect of the display system is better.
  • FIG. 39 is a schematic structural diagram of a light source device provided by an embodiment of the present application.
  • the light source device 40 may include a laser 401 and the fluorescence conversion component 00 provided in the above embodiment.
  • the fluorescence conversion component 00 can be the fluorescence conversion component shown in FIGS. 1 to 16 or any one of FIGS. 20 to 35.
  • the laser 401 can be used to generate a laser beam, and the fluorescence conversion component 00 can be used to generate fluorescence under the irradiation of the laser beam.
  • the light source device 40 may further include: a shaping light path 402, a first diffusion component 403, a dichroic mirror 404, a second diffusion component 405, and a reflection plate 406.
  • the laser 401 can be used to emit a blue laser beam, and the blue laser beam can sequentially pass through the shaping light path 402, the first diffusion component 403, and the dichroic mirror 404 to focus and irradiate into the fluorescence conversion component 00
  • the fluorescence conversion material layer 0011 of the fluorescence conversion material layer 0011 generates fluorescence under the high-energy excitation of the blue laser beam.
  • the fluorescence conversion part 00 may include a reflection part and a projection part. Wherein, the reflecting part may be coated with at least one of red phosphor and green phosphor.
  • the transmissive part can be made of transparent material and can be used to transmit the blue laser beam.
  • a first lens assembly 407 is provided on the side of the fluorescence conversion component 00 close to the laser 401, and the first lens assembly 407 has the dual functions of focusing and collimating.
  • the first lens assembly 407 can focus the blue laser beam into a smaller spot.
  • the blue laser beam can irradiate the phosphor of the reflection part, thereby exciting red fluorescence or green fluorescence.
  • the excited red fluorescence or green fluorescence can be reflected by the reflective layer 0012 in the fluorescence conversion component 00, pass through the first lens assembly 407, and finally be reflected by the dichroic mirror 404 to the light source outlet, thereby outputting red fluorescence or Green fluorescent.
  • the fluorescence conversion part 00 may allow the blue laser beam to pass through the transmission part. Since the blue laser beam diverges after being focused by the first lens assembly 407, when the blue laser beam reaches the other side of the fluorescence conversion component 00 away from the laser 401, the blue laser beam needs to be collimated. Therefore, a second transmission component 408 is provided on the side of the fluorescence conversion component away from the laser 401, and the second transmission component 408 can be used to collimate the blue laser beam transmitted from the fluorescence conversion component 00, and irradiate it with a parallel beam. After the reflector 406 is diffused and homogenized by the second diffuser 405, it passes through the dichroic mirror 404 to the light source outlet, thereby outputting blue light.
  • the first lens assembly 407 and the second lens assembly 408 can be symmetrical with respect to the fluorescence conversion component, and the types of the first lens assembly 407 and the second lens assembly 408 can be the same .
  • the first lens assembly 407 and the second lens assembly 408 may each include a spherical lens and a hyperspherical lens.
  • the light source device 40 may include a color filter component 409 and a uniform light integration device 410.
  • the color filter component 409 can be used to filter light of colors other than the color to be output. For example, if the light to be output is blue light, the color filter element 409 can be used to filter light of colors other than blue.
  • the uniform light integration device 410 can irradiate the output light to the display assembly, thereby outputting an image.
  • FIG. 40 is a schematic structural diagram of a display system provided by an embodiment of the present application.
  • the display system may include: the light source device 40 provided in the foregoing embodiment, a digital micromirror device (DMD) 50, and a display assembly 60.
  • DMD digital micromirror device
  • the DMD 50 can reflect the light output by the light source device 40 to the display assembly 60 under the control of the chip, and the display assembly 60 can realize image display.
  • the display component 60 may be a projection lens.

Abstract

一种荧光转换部件及其制造方法、光源装置、显示系统，涉及投影显示技术领域。该荧光转换部件（00）可以包括：荧光转化组件（001）、承载组件（002）以及导热层（003）。该荧光转化组件（001）中的荧光转化材料层（0011）被激光光束照射之后产生的热量，可以传导至导热层（003）的各个区域，保证荧光转化材料层（0011）转换荧光的效率，进而确保显示系统的显示效果。

Description

荧光转换部件及其制造方法、光源装置、显示系统
本申请要求在2019年9月19日提交中国专利局、申请号为201910888244.0、发明名称为“荧光转换部件及其制造方法、光源装置、显示系统”，以及，2019年9月19日提交中国专利局、申请号为201910888253.X、发明名称为“荧光转换部件及其制造方法、光源装置、显示系统”优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及投影显示技术领域，特别涉及一种荧光转换部件及其制造方法、光源装置、显示系统。
背景技术
激光因为亮度高，单色性强，色域宽广等优点被应用于投影显示领域。激光光源通常采用激光光束激发荧光粉发光，并使激光光束自身的光，以及产生的荧光照射到显像组件上实现图像显示。
相关技术中，激光光源通常包括激光器和荧光轮。该荧光轮可以包括：荧光转化材料层，承载基板以及驱动组件。该承载基板可以包括反射区域和透射区域。该荧光转化材料层可以位于承载基板的反射区域，该驱动组件可以用于驱动荧光转化材料层和承载基板旋转。当激光器发出的激光光束照射至荧光转化材料层(即反射区域)时，该荧光转化材料层可以在该激光光束的照射下产生荧光，该荧光可以被承载基板反射并照射在显示组件上，当激光器发出的激光光束照射至透射区域时，可以将该激光光束透射后照射在显示组件上。由于该荧光轮可以在驱动组件的驱动下旋转，因此可以将荧光以及激光光束依次照射至显示组件，实现图像显示。
但是，由于荧光转化材料层在本激光光束照射后会产生大量的热量，其热量无法快速散出会聚集在荧光转化材料层上，导致荧光转化材料层的热量较高，荧光的转换效率较差，进而导致显示系统的显示效果较差。
发明内容
本申请一方面，提供了一种荧光转换部件，所述荧光转换部件包括：荧光转化组件、承载组件、导热层以及焊料层；
所述荧光转化组件包括：层叠设置的荧光转化材料层以及反射层；
所述承载组件包括：承载基板；
所述焊料层位于所述荧光转化组件和所述承载组件之间，所述荧光转化组件和所述承载组件通过所述焊料层焊接；
所述导热层位于所述荧光转化组件中，或者，所述导热层位于所述承载基板上。
另一方面，提供了一种荧光转换部件的制造方法，所述方法包括：
提供荧光转化组件、承载组件以及导热层，所述荧光转化组件包括层叠设置的荧光转化材料层以及反射层，所述承载组件包括承载基板；
提供焊料层；
通过所述焊料层将所述荧光转化组件与所述承载组件焊接；
其中，所述导热层位于所述荧光转化组件中，或者，所述导热层位于所述承载基板上。
又一方面，提供了一种光源装置，所述光源装置包括：激光器以及上述方面所述的荧光转换部件。
再一方面，提供了一种显示系统，所述显示系统包括：上述方面所述的光源装置。
附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本申请实施例提供的一种荧光转换部件的结构示意图；
图2是本申请实施例提供的另一种荧光转换部件的结构示意图；
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图17是本申请实施例提供的一种荧光转换部件的制造方法的流程图；
图18是本申请实施例提供的另一种荧光转换部件的制造方法的流程图；
图19是本申请实施例提供的又一种荧光转换部件的制造方法的流程图；
图20是本申请又一实施例提供的一种荧光转换部件的结构示意图；
图21是本申请又一实施例提供的另一种荧光转换部件的结构示意图；
图22是本申请又一实施例提供的又一种荧光转换部件的结构示意图；
图23是本申请又一实施例提供的再一种荧光转换部件的结构示意图；
图24是本申请又一实施例提供的再一种荧光转换部件的结构示意图；
图25是本申请又一实施例提供的再一种荧光转换部件的结构示意图；
图26是本申请又一实施例提供的再一种荧光转换部件的结构示意图；
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图30是本申请又一实施例提供的再一种荧光转换部件的结构示意图；
图31是本申请又一实施例提供的再一种荧光转换部件的结构示意图；
图32是本申请又一实施例提供的再一种荧光转换部件的结构示意图；
图33是本申请又一实施例提供的再一种荧光转换部件的结构示意图；
图34是本申请又一实施例提供的再一种荧光转换部件的结构示意图；
图35是本申请又一实施例提供的再一种荧光转换部件的结构示意图；
图36是本申请又一实施例提供的一种荧光转换部件的制造方法的流程图；
图37是本申请又一实施例提供的另一种荧光转换部件的制造方法的流程图；
图38是本申请又一实施例提供的又一种荧光转换部件的制造方法的流程图；
图39是本申请实施例提供的一种光源装置的结构示意图；
图40是本申请实施例提供的一种显示系统的结构示意图。
具体实施方式
为使本申请的目的、技术方案和优点更加清楚，下面将结合附图对本申请实施方式作进一步地详细描述。
图1是本申请实施例提供的一种荧光转换部件的结构示意图。参考图1可以看出，该荧光转换部件00可以包括：荧光转化组件001、承载组件002、导热层003以及焊料层004。
该荧光转化组件001可以包括：层叠设置的荧光转化材料层0011以及反射层0012。该承载组件002可以包括：承载基板0021。焊料层004可以位于荧光转化组件001和承载组件002之间，该荧光转化组件001和承载组件002可以通过焊料层004焊接。
其中，参考图1，导热层003可以位于荧光转化组件001中，或者，参考图2，导热层003也可以位于承载基板0021上。
在本申请实施例中，该荧光转化材料层0011可以在激光光束的照射下产生荧光，该荧光可以被反射层0012反射后照射在显示组件上。其中，该反射层0012可以位于荧光转化材料层0011和导热层003之间，从而保证该反射层0012可以有效反射荧光转化材料层0011产生的荧光。
由于本申请实施例中的荧光转换部件00中设置有导热层003，因此荧光转化材料层0011被激光光束照射后产生的热量，可以传导至导热层003的各个区域，该荧光转换部件00各个区域的热量差异较小，避免由于该荧光转换部件00中被激光光束照射的区域的热量较高导致荧光转化材料层0011转换荧光的效率较差，进而影响显示系统的显示效果。
综上所述，本申请实施例提供了一种荧光转换部件，该荧光转换部件可以包括：荧光转化组件、承载组件、导热层以及焊料层。该荧光转化组件中的荧光转化材料层被激光光束照射之后产生的热量，可以传导至导热层的各个区域，避免了荧光转化材料层中局部区 域的温度较高的问题，保证荧光转化材料层转换荧光的效率，进而确保显示系统的显示效果。
在本申请实施例中，该导热层003的材料可以为高导热效率的金属。可选的，该导热层003的材料可以包括：银，铜，金，以及铝中的至少一种。银，铜，金以及铝的导热效率均较高，荧光转化材料层0011被激光光束照射后产生的热量可以迅速传导至导热层003的各个区域，减小了荧光转化材料层0011被激光光束照射的区域的温度，不仅可以避免荧光转化材料层0011的局部温度较高，而且可以提高该荧光转换部件的散热能力。
示例的，该导热层003的材料可以为铜，或者可以为金。考虑到金的成本较高，本申请实施例提供的导热层003的材料可以为铜。当然，本申请实施例中的导热层003的材料也可以为其他具有导热性能的材料，本申请实施例对此不做限定。
可选的，该导热层003的厚度范围可以为10μm(微米)至200μm。示例的，该导热层003的厚度可以为100μm。
在本申请实施例中，该焊料层004的材料可以包括：金锡合金，或者烧结银。例如，焊料层004的材料为包括质量分数为80％的金和质量分数为20％的锡的金锡共晶合金，即Au80Sn20。该焊料层004也可以称为金锡共晶层。
可选的，该焊料层004的厚度范围可以为10μm至100μm。示例的，该焊料层004的厚度可以为50μm。
在本申请实施例中，荧光转化材料层0011的材料可以包括：钇铝石榴石(YAG)荧光粉和陶瓷。或者，该荧光转化材料层0011的材料可以仅包括：YAG荧光粉。该荧光转化材料层0011中的YAG荧光粉可以在激光光束的照射下产生荧光。
示例的，假设荧光转化材料层0011的材料包括红色YAG荧光粉，则该荧光转化材料层0011中的红色YAG荧光粉可以在激光光束的照射下产生红色荧光，即产生波长范围为625nm(纳米)至740nm的荧光。
可选的，该荧光转化材料层0011的厚度范围可以为0.05mm(毫米)至1mm。示例的，该荧光转化材料层0011的厚度可以为0.5mm。
需要说明的是，该荧光转化材料层0011的材料可以包括多种不同颜色的YAG荧光粉，每种颜色的YAG荧光粉可以位于该荧光转化材料层0011的不同区域，从而使得激光光束照射至该荧光转化材料层0011的不同区域时，产生不同颜色的荧光。
示例的，荧光转化材料层0011的材料可以包括红色YAG荧光粉和绿色YAG荧光粉，当激光光束照射至设置有红色YAG荧光粉的区域时，可以产生红色荧光，当激光光束照射至设置有绿色YAG荧光粉的区域时，可以产生绿色荧光。
在本申请实施例中，该反射层0012的材料可以包括：介质或金属。该反射层0012可以用于反射荧光转化材料层0011在激光光束的照射下产生的荧光。为了保证该反射层0012的反射效率，该反射层0012的材料可以为介质。
示例的，假设荧光转化材料层0011在激光的照射下可以产生红色荧光，则该发射层0042可以用于反射该红色荧光，即反射波长范围为625nm至740nm的荧光。
可选的，该反射层0012的厚度范围可以为0.5μm至10μm。示例的，该反射层0012 的厚度可以为5μm。
在本申请实施例中，承载基板0021的材料可以包括：金属。例如，该承载基板0021的材料可以为铝或钨铜合金。该承载基板0021也可以称为铝基板或钨铜基板。当然，该承载基板0021的材料也可以包括能够满足承载要求的非金属材料，例如，该承载基板0021的材料可以为氧化铝或陶瓷。其中，该氧化铝可以称为蓝宝石，该承载基板0021可以称为蓝宝石基板或陶瓷基板。
可选的，该承载基板0021的厚度范围可以为0.1mm至2mm。该承载基板0021的直径D可以的范围可以为20mm至120mm。示例的，该承载基板0021的厚度可以为1mm。该承载基板0021的直径D可以为100mm。其中，该承载基板0021的直径D可以为该承载基板0021沿第一方向X的长度，该第一方向X可以垂直于导热层003，荧光转化材料层0011，反射层0012，以及焊料层004的层叠方向。
作为一种可选的实现方式，参考图1，在导热层003位于荧光转化组件001中时，焊料层004、导热层003、反射层0012以及荧光转化材料层0011可以沿远离承载基板0021的方向依次层叠设置。该焊料层004可以用于焊接位于该焊料层004两侧的承载基板0021和导热层003。
作为另一种可选的实现方式，参考图2，在导热层003位于承载基板0021上时，导热层003、焊料层004、反射层0012以及荧光转化材料层0011可以沿远离承载基板0021的方向依次层叠设置。该焊料层004可以用于焊接位于该焊料层004两侧的导热层0013和反射层0012。
参考图3和图4可以看出，该荧光转换部件00还可以包括：第一金属可焊层005。参考图3，该第一金属可焊层005可以位于焊料层004与导热层003之间，该焊料层004可以用于焊接位于该焊料层004两侧的第一金属可焊层005和承载基板0021。或者，参考图4，该第一金属可焊层005可以位于焊料层004与反射层0012之间，该焊料层004可以用于焊接位于该焊料层004两侧的导热层003和第一金属可焊层005。
参考图5和图6可以看出，该荧光转换部件00还可以包括：第一阻焊层006。其中，该第一阻焊层006可以位于第一金属可焊层005远离焊料层004的一面。也即是，参考图5，该第一阻焊层006可以位于第一金属可焊层005和导热层003之间，该焊料层004可以用于焊接位于该焊料层004两侧的承载基板0021和第一金属可焊层005。或者，参考图6，该第一阻焊层006可以位于第一金属可焊层005和反射层0012之间，该焊料层004可以用于焊接位于该焊料层004两侧的导热层003和第一金属可焊层005。
参考图7和图8可以看出，该荧光转换部件00还可以包括：第二金属可焊层007。参考图7，该第二金属可焊层007位于承载基板0021的一面，也即是，该第二金属可焊层007可以位于承载基板0021与焊料层004之间，该焊料层004可以用于焊接位于该焊料层004两侧的导热层003和第二金属可焊层007。或者，参考图8，该第二金属可焊层007可以位于导热层003远离承载基板0021的一面，也即是，该第二金属可焊层007可以位于导热层003与焊料层004之间，该焊料层004可以用于焊接位于该焊料层004两侧的反射层0012和第二金属可焊层007。
参考图9和图10，该荧光转换部件00还可以包括：第二阻焊层008。该第二阻焊层008可以位于第二金属可焊层007靠近承载基板0021的一面。参考图9，该第二阻焊层008可以位于第二金属可焊层007与承载基板0021之间，该焊料层004可以用于焊接位于该焊料层004两侧的导热层003和第二金属可焊层007。参考图10，该第二阻焊层008可以位于第二金属可焊层007与导热层003之间，该焊料层004可以用于焊接位于该焊料层004两侧的反射层0012和第二金属可焊层007。
当然，参考图11和图12，该荧光转换部件00还可以同时包括第一金属可焊层005、第一阻焊层006、第二金属可焊层007和第二阻焊层008，该焊料层004可以用于焊接位于该焊料层004两侧的第一金属可焊层005和第二金属可焊层007。
通过在荧光转换部件00中设置第一金属可焊层005、第一阻焊层006、第二金属可焊层007和第二阻焊层008，可以避免焊料层004在焊接位于该焊料层004两侧的结构层时，对该焊料层004两侧的结构层造成损伤，保证该荧光转换部件00的质量。
在本申请实施例中，第一阻焊层006和第二阻焊层008的材料可以包括：镍或钛中的至少一种。由于镍的导热性能较好，因此，该第一阻焊层006和第二阻焊层008的材料可以为镍，荧光转化材料层0011被激光光束照射之后产生的热量也能够传导至该第一阻焊层006和第二阻焊层008，进一步提高该荧光转换部件的散热能力。
可选的，该第一阻焊层006和第二阻焊层008的厚度范围可以为0.1μm至5μm。示例的，该第一阻焊层006和第二阻焊层008的厚度可以均为3μm。
在本申请实施例中，第一金属可焊层005和第二金属可焊层007的材料可以包括：金。该第一金属可焊层005和第二金属可焊层007的厚度范围可以为0.1μm至2μm。示例的，该第一金属可焊层005和第二金属可焊层007的厚度可以均为1μm。
在图11所示的荧光转换部件00中，第二阻焊层008，第二金属可焊层007，焊料层004，第一金属可焊层005，第一阻焊层006，导热层003，反射层0012，以及荧光转化材料层0011可以沿远离承载基板0021的方向层叠设置。
在图12所示的荧光转换部件00中，导热层003，第二阻焊层008，第二金属可焊层007，焊料层004，第一金属可焊层005，第一阻焊层006，反射层0012，以及荧光转化材料层0011可以沿远离承载基板0021的方向层叠设置。
在本申请实施例中，导热层003在该承载基板0021上的正投影可以与该荧光转化材料层0011在该承载基板0021上的正投影重叠。也即是，荧光转化材料层0011被激光光束照射之后产生的热量所能够传导的区域，与该荧光转化材料层0011在承载基板0021上的正投影所在的区域相同。
或者，参考图13，当导热层003位于承载基板0021上时，荧光转化材料层0011在承载基板0021上的正投影可以位于导热层003在该承载基板0021上的正投影内。也即是，该荧光转化材料层0011在承载基板0021上的正投影的区域，位于荧光转化材料层0011被激光光束照射之后产生的热量所能够传导的区域内，热量能够传导的范围较大，增加了荧光转换部件00的散热能力。
示例的，该导热层003在该承载基板0021上的正投影的面积，可以为荧光转化材料 层0011在该承载基板0021上的正投影的面积的一倍至三倍。
图14是本申请实施例提供的再一种荧光转换部件的结构示意图。图15是本申请实施例提供的再一种荧光转换部件的结构示意图。参考图14和图15可以看出，该荧光转换部件00还可以包括：光学增透膜009。该光学增透膜009可以位于该荧光转化材料层0011远离反射层0012的一面。
也即是，当激光光束照射至该荧光转换部件00时，可以从该光学增透膜009透射后再照射至荧光转化材料层0011。其中，该光学增透膜009可以有效避免激光光束所对应的颜色被反射。示例的，假设激光光束为蓝色激光光束，则该光学增透膜009可以避免蓝光被反射，即可以避免波长范围为420nm至470nm的光被反射。
可选的，该光学增透膜009的厚度范围可以为0.5μm至10μm。示例的，该光学增透膜009的厚度可以为5μm。
图16是本申请实施例提供的再一种荧光转换部件的结构示意图。参考图16可以看出，该荧光转换部件00还可以包括：驱动组件010。该驱动组件010可以与承载基板0021连接，该驱动组件010可以用于驱动承载基板0021，焊料层004，导热层003以及荧光转化组件001旋转。
示例的，参考图16，该驱动组件010可以位于承载基板0021远离荧光转化组件001的一面，且与承载基板0021连接。
可选的，该驱动组件010可以为驱动电机或驱动马达。本申请实施例对该驱动组件010的具体实现形式不做限定。
在本申请实施例中，通过设置驱动组件010，可以驱动该荧光转化组件001以较高的速度旋转，从而避免荧光转化材料层0011中被激光光束照射的区域的热量较高导致荧光转化材料层0011转化荧光的效率较差。
综上所述，本申请实施例提供了一种荧光转换部件，该荧光转换部件可以包括：荧光转化组件、承载组件、导热层以及焊料层。该荧光转化组件中的荧光转化材料层被激光光束照射之后产生的热量，可以传导至导热层的各个区域，避免了荧光转化材料层中局部区域的温度较高的问题，保证荧光转化材料层转换荧光的效率，进而确保显示系统的显示效果。
图17是本申请实施例提供的一种荧光转换部件的制造方法的流程图。参考图17可以看出，该方法可以包括：
步骤101、提供荧光转化组件、承载组件以及导热层。
该荧光转化组件001可以包括层叠设置的荧光转化材料层0011以及反射层0012，该承载组件002可以包括承载基板0021。
步骤102、提供焊料层。
步骤103、通过焊料层将荧光转化组件与承载组件焊接。
在本申请实施例中，该焊料层004可以设置在反射层0012和承载基板0021之间，该导热层003可以位于荧光转化组件001中，或者导热层003可以位于承载基板0021上。荧光转化材料层0011可以在激光光束的照射下产生荧光，该荧光可以被反射层0012反射 后照射在显示组件上，该反射层0012能够有效反射荧光转化材料层0011产生的荧光。
采用本申请实施例提供的制造方法制造得到的荧光转换部件00中设置有导热层003，荧光转化材料层0011被激光光束照射后产生的热量，可以传导至导热层003的各个区域，该荧光转换部件00各个区域的热量差异较小，避免由于荧光转换部件00中被激光光束照射的区域的热量较高导致荧光转化材料层0011转化荧光的效率较差，进而影响显示系统的显示效果。
综上所述，本申请实施例提供了一种荧光转换部件的制造方法，该荧光转换部件包括：荧光转化组件，承载组件以及导热层。该荧光转化组件包括荧光转化材料层和反射层。该荧光转化材料层被激光光束照射之后产生的热量，可以传导至导热层的各个区域，避免了荧光转化材料层中局部区域的温度较高的问题，保证荧光转化材料层转换荧光的效率，显示系统的显示效果较好。
图18是本申请实施例提供的另一种荧光转换部件的制造方法的流程图。参考图18可以看出，该方法可以包括：
步骤201、采用晶体生长的方式形成荧光转化材料层。
在本申请实施例中，可以采用YAG荧光粉和陶瓷通过晶体生长的方式形成荧光转化材料层0011，该荧光转化材料层0011也可以称为陶瓷荧光转化材料层。或者，可以仅采用YAG荧光粉通过晶体生长的方式形成荧光转化材料层，该荧光转化材料层0011也可以称为单晶荧光转化材料层。
当然，也可以采用YAG荧光粉和陶瓷通过高温烧结的方式形成荧光转化材料层0011。或者可以仅采用YAG荧光粉通过高温烧结的方式形成荧光转化材料层0011。本申请实施例对形成该荧光转化材料层0011的材料和方式不做限定。
步骤202、在荧光转化材料层的一面形成光学增透膜。
在本申请实施例中，可以通过蒸镀或溅射的方式在荧光转化材料层0011的一面形成光学增透膜009。该光学增透膜009可以有效避免激光光束所对应的颜色被反射。示例的，当蓝色激光光束照射至该荧光转换部件00时，该光学增透膜009可以有效避免蓝光被反射。
需要说明的是，该荧光转化材料层0011的一面还可以不形成该光学增透膜008，当该荧光转化材料层0011的一面未形成光学增透膜008时，可以对该荧光转化材料层0011靠近激光光束的一面进行粗糙处理，增大该荧光转化材料层0011靠近激光光束的一面的粗糙度，从而减少激光光束的反射。
步骤203、在荧光转化材料层远离光学增透膜的一面电镀形成反射层。
在本申请实施例中，反射层0012的材料可以包括：介质或金属。当该反射层0012的材料为金属时，可以通过电镀的方式在荧光转化材料层0011远离光学增透膜009的一面形成该反射层0012。当该反射层0012的材料为介质时，可以通过蒸镀或溅射的方式在荧光转化材料层0011远离光学增透膜009的一面形成该反射层0012。该反射层0012可以用于反射荧光转化材料层0011在激光光束的照射下产生的荧光。
步骤204、在反射层远离荧光转化材料层的一面形成导热层。
在本申请实施例中，可以通过电镀或气相沉积的方式在反射层0012远离荧光转化材料层0011的一面形成导热层003。该导热层003的导热效率较高，荧光转化材料层0011被激光光束照射后产生的热量可以迅速传导至导热层003的各个区域，可以避免荧光转化材料层0011的局部温度较高，提高了荧光转换部件的散热能力。
步骤205、在导热层远离反射层的一面形成第一阻焊层。
在本申请实施例中，可以采用镍通过电镀或气相沉积的方式在导热层003远离反射层0012的一面形成第一阻焊层006。由于镍的导热性能较好，因此，荧光转化材料层0011被激光光束照射之后产生的热量也能够传导至该第一阻焊层006，进一步提高该荧光转换部件的散热能力。
步骤206、在第一阻焊层远离导热层的一面形成第一金属可焊层。
在本申请实施例中，可以采用金通过电镀或气相沉积的方式在第一阻焊层006远离导热层003的一面形成第一金属可焊层005。
步骤207、在承载基板的一面形成第二阻焊层。
在本申请实施例中，可以采用镍通过电镀或气相沉积的方式在承载基板0021的一面形成第二阻焊层008。由于镍的导热性能较好，因此，荧光转化材料层0011被激光光束照射之后产生的热量也能够传导至该第二阻焊层008，进一步提高该荧光转换部件的散热能力。
步骤208、在第二阻焊层远离承载基板的一面形成第二金属可焊层。
在本申请实施例中，可以采用金通过电镀或气相沉积的方式在第二阻焊层008远离承载基板0021的一面形成第二金属可焊层007。
步骤209、提供焊料层。
在本申请实施例中，该焊料层可以为质量分数为80％的金和质量分数为20％的锡组成的金锡合金，该焊料层004还可以称为金锡共晶层。
步骤210、加热焊料层，通过该焊料层将第一金属可焊层和第二金属可焊层焊接。
在本申请实施例中，可以先将焊料层004设置在第一金属可焊层005和第二金属可焊层007之间，之后可以加热焊料层004，通过焊料层004将第一金属可焊层005和第二金属可焊层007焊接，保证制造得到的荧光转换部件00的质量。
图19是本申请实施例提供的另一种荧光转换部件的制造方法的流程图。参考图19可以看出，该方法可以包括：
步骤301、采用晶体生长的方式形成荧光转化材料层。
步骤302、在荧光转化材料层的一面形成光学增透膜。
步骤303、在荧光转化材料层远离光学增透膜的一面形成反射层。
步骤304、在导热层远离反射层的一面形成第一阻焊层。
步骤305、在第一阻焊层远离反射层的一面形成第一金属可焊层。
步骤306、在承载基板的一面形成导热层。
步骤307、在导热层远离承载基板的一面形成第二阻焊层。
步骤308、在第二阻焊层远离导热层的一面形成第二金属可焊层。
步骤309、提供焊料层。
步骤310、加热焊料层，通过该焊料层将第一金属可焊层和第二金属可焊层焊接。
在本申请实施例中，步骤301至步骤310的制造方法可以参考上述步骤201至步骤210，本申请实施例在此不再赘述。
需要说明的是，本申请实施例提供的荧光转换部件的制造方法的步骤的先后顺序可以进行适当调整，步骤也可以根据情况进行相应增减。例如，步骤207至步骤209可以在步骤201之前执行，步骤306至步骤309可以在步骤301之前执行，步骤202和步骤302可以根据情况删除。任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化的方法，都应涵盖在本申请的保护范围之内，因此不再赘述。
综上所述，本申请实施例提供了一种荧光转换部件的制造方法，该荧光转换部件包括：荧光转化组件、承载组件以及导热层。该荧光转化组件中的荧光转化材料层被激光光束照射之后产生的热量，可以传导至导热层的各个区域，避免荧光转化材料层中局部区域的温度较高的问题，保证荧光转化材料层转换荧光的效率，显示系统的显示效果较好。
以及，作为上述实施例的一种变型，参见图20，图20是本申请实施例提供的一种荧光转换部件的结构示意图。参考图20可以看出，该荧光转换部件00可以包括：荧光转化组件001、承载组件002以及导热层003。
该荧光转化组件001可以包括：层叠设置的荧光粉层0011、反射层0012以及焊料层0013。该承载组件002可以包括：承载基板0021。该荧光转化组件001可以通过焊料层0013与承载组件002焊接。
其中，导热层003可以位于荧光转化组件001中，或者，导热层003也可以位于承载基板0021上。
在本申请实施例中，该荧光粉层0011可以在激光光束的照射下产生荧光，该荧光可以被反射层0012反射后照射在显示组件上。其中，该反射层0012可以位于荧光粉层0011和导热层003之间，从而保证该反射层0012可以有效反射荧光粉层0011产生的荧光。因此本申请实施例提供的一种荧光转换部件，包括：承载基板，焊接结构层，导热层以及荧光转化组件。该荧光转化组件中的荧光粉层被激光光束照射之后产生的热量，可以传导至导热层的各个区域，避免了荧光粉层中局部区域的温度较高的问题，保证荧光粉层转换荧光的效率，进而确保显示系统的显示效果。
在本申请实施例中，该导热层003的材料可以为高导热效率的金属。可选的，该导热层003的材料可以包括：银，铜，金，以及铝中的至少一种。银，铜，金以及铝的导热效率均较高，荧光粉层0011被激光光束照射后产生的热量可以迅速传导至导热层003的各个区域，减小了荧光粉层0011被激光光束照射的区域的温度，不仅可以避免荧光粉层0011的局部温度较高，而且可以提高该荧光转换部件的散热能力。
示例的，该导热层003的材料可以为铜，或者可以为金。考虑到金的成本较高，本申请实施例提供的导热层003的材料可以为铜。当然，本申请实施例中的导热层003的材料也可以为其他具有导热性能的材料，本申请实施例对此不做限定。
可选的，该导热层003的厚度范围可以为10μm(微米)至200μm。示例的，该导热层003的厚度可以为100μm。
在本申请实施例中，该焊料层0013的材料可以包括：金锡合金，或者烧结银。例如，焊料层0013的材料为包括质量分数为80％的金和质量分数为20％的锡的金锡共晶合金，即Au80Sn20。该焊料层0013也可以称为金锡共晶层。
可选的，该焊料层0013的厚度范围可以为10μm至100μm。示例的，该焊料层0013的厚度可以为50μm。
在本申请实施例中，荧光粉层0011的材料可以包括：钇铝石榴石(YAG)荧光粉和陶瓷。或者，该荧光粉层0011的材料可以仅包括：YAG荧光粉。该荧光粉层0011中的YAG荧光粉可以在激光光束的照射下产生荧光。
示例的，假设荧光粉层0011的材料包括红色YAG荧光粉，则该荧光粉层0011中的红色YAG荧光粉可以在激光光束的照射下产生红色荧光，即产生波长范围为625nm(纳米)至740nm的荧光。
可选的，该荧光粉层0011的厚度范围可以为0.05mm(毫米)至1mm。示例的，该荧光粉层0011的厚度可以为0.5mm。
需要说明的是，该荧光粉层0011的材料可以包括多种不同颜色的YAG荧光粉，每种颜色的YAG荧光粉可以位于该荧光粉层0011的不同区域，从而使得激光光束照射至该荧光粉层0011的不同区域时，产生不同颜色的荧光。
示例的，荧光粉层0011的材料可以包括红色YAG荧光粉和绿色YAG荧光粉，当激光光束照射至设置有红色YAG荧光粉的区域时，可以产生红色荧光，当激光光束照射至设置有绿色YAG荧光粉的区域时，可以产生绿色荧光。
在本申请实施例中，该反射层0012的材料可以包括：介质或金属。该反射层0012可以用于反射荧光粉层0011在激光光束的照射下产生的荧光。为了保证该反射层0012的反射效率，该反射层0012的材料可以为介质。
示例的，假设荧光粉层0011在激光的照射下可以产生红色荧光，则该发射层0042可以用于反射该红色荧光，即反射波长范围为625nm至740nm的荧光。
可选的，该反射层0012的厚度范围可以为0.5μm至10μm。示例的，该反射层0012的厚度可以为5μm。
在本申请实施例中，承载基板0021的材料可以包括：金属。例如，该承载基板0021的材料可以为铝或钨铜合金。该承载基板0021也可以称为铝基板或钨铜基板。当然，该承载基板0021的材料也可以包括能够满足承载要求的非金属材料，例如，该承载基板0021的材料可以为氧化铝或陶瓷。其中，该氧化铝可以称为蓝宝石，该承载基板0021可以称为蓝宝石基板或陶瓷基板。
可选的，该承载基板0021的厚度范围可以为0.1mm至2mm。该承载基板0021的直径D可以的范围可以为20mm至120mm。示例的，该承载基板0021的厚度可以为1mm。该承载基板0021的直径D可以为100mm。其中，该承载基板0021的直径D可以为该承载基板0021沿第一方向X的长度，该第一方向X可以垂直于导热层003，荧光粉层0011， 反射层0012，以及焊料层0013的层叠方向。
作为一种可选的实现方式，参考图20，在导热层003位于荧光转化组件001中时，焊料层0013、导热层003、反射层0012以及荧光粉层0011可以沿远离承载基板0021的方向依次层叠设置。该焊料层0013可以用于焊接位于该焊料层0013两侧的承载基板0021和导热层003。
作为另一种可选的实现方式，参考图21，在导热层003位于承载基板0021上时，导热层003、焊料层0013、反射层0012以及荧光粉层0011可以沿远离承载基板0021的方向依次层叠设置。该焊料层0013可以用于焊接位于该焊料层0013两侧的导热层0013和反射层0012。
参考图22和图23可以看出，该荧光转换部件00还可以包括：第一金属可焊层004。参考图22，该第一金属可焊层004可以位于焊料层0013与导热层003之间，该焊料层0013可以用于焊接位于该焊料层0013两侧的第一金属可焊层004和承载基板0021。或者，参考图23，该第一金属可焊层004可以位于焊料层0013与反射层0012之间，该焊料层0013可以用于焊接位于该焊料层0013两侧的导热层003和第一金属可焊层004。
参考图24和图25可以看出，该荧光转换部件00还可以包括：第一阻焊层005。其中，该第一阻焊层005可以位于第一金属可焊层004远离焊料层0013的一面。也即是，参考图24，该第一阻焊层005可以位于第一金属可焊层004和导热层003之间，该焊料层0013可以用于焊接位于该焊料层0013两侧的承载基板0021和第一金属可焊层004。或者，参考图25，该第一阻焊层005可以位于第一金属可焊层004和反射层0012之间，该焊料层0013可以用于焊接位于该焊料层0013两侧的导热层003和第一金属可焊层004。
参考图26和图27可以看出，该荧光转换部件00还可以包括：第二金属可焊层006。参考图26，该第二金属可焊层006位于承载基板0021的一面，也即是，该第二金属可焊层006可以位于承载基板0021与焊料层0013之间，该焊料层0013可以用于焊接位于该焊料层0013两侧的导热层003和第二金属可焊层006。或者，参考图27，该第二金属可焊层006可以位于导热层003远离承载基板0021的一面，也即是，该第二金属可焊层006可以位于导热层003与焊料层0013之间，该焊料层0013可以用于焊接位于该焊料层0013两侧的反射层0012和第二金属可焊层006。
参考图28和图29，该荧光转换部件00还可以包括：第二阻焊层007。该第二阻焊层007可以位于第二金属可焊层006靠近承载基板0021的一面。参考图28，该第二阻焊层007可以位于第二金属可焊层006与承载基板0021之间，该焊料层0013可以用于焊接位于该焊料层0013两侧的导热层003和第二金属可焊层006。参考图29，该第二阻焊层007可以位于第二金属可焊层006与导热层003之间，该焊料层0013可以用于焊接位于该焊料层0013两侧的反射层0012和第二金属可焊层006。
当然，参考图30和图31，该荧光转换部件00还可以同时包括第一金属可焊层004、第一阻焊层005、第二金属可焊层006和第二阻焊层007，该焊料层0013可以用于焊接位于该焊料层0013两侧的第一金属可焊层005和第二金属可焊层006。
通过在荧光转换部件00中设置第一金属可焊层004、第一阻焊层005、第二金属可焊 层006和第二阻焊层007，可以避免焊料层0013在焊接位于该焊料层0013两侧的结构层时，对该焊料层0013两侧的结构层造成损伤，保证该荧光转换部件00的质量。
在本申请实施例中，第一阻焊层005和第二阻焊层007的材料可以包括：镍或钛中的至少一种。由于镍的导热性能较好，因此，该第一阻焊层005和第二阻焊层007的材料可以为镍，荧光粉层0011被激光光束照射之后产生的热量也能够传导至该第一阻焊层005和第二阻焊层007，进一步提高该荧光转换部件的散热能力。
可选的，该第一阻焊层005和第二阻焊层007的厚度范围可以为0.1μm至5μm。示例的，该第一阻焊层005和第二阻焊层007的厚度可以均为3μm。
在本申请实施例中，第一金属可焊层004和第二金属可焊层006的材料可以包括：金。该第一金属可焊层004和第二金属可焊层006的厚度范围可以为0.1μm至2μm。示例的，该第一金属可焊层004和第二金属可焊层0023的厚度可以均为1μm。
在图30所示的荧光转换部件00中，第二阻焊层007，第二金属可焊层006，焊料层0013，第一金属可焊层004，第一阻焊层005，导热层003，反射层0012，以及荧光粉层0011可以沿远离承载基板0021的方向层叠设置。
在图31所示的荧光转换部件00中，导热层003，第二阻焊层007，第二金属可焊层006，焊料层0013，第一金属可焊层004，第一阻焊层005，反射层0012，以及荧光粉层0011可以沿远离承载基板0021的方向层叠设置。
在本申请实施例中，导热层003在该承载基板0021上的正投影可以与该荧光粉层0011在该承载基板0021上的正投影重叠。也即是，荧光粉层0011被激光光束照射之后产生的热量所能够传导的区域，与该荧光粉层0011在承载基板0021上的正投影所在的区域相同。
或者，参考图32，当导热层003位于承载基板0021上时，荧光粉层0011在承载基板0021上的正投影可以位于导热层003在该承载基板0021上的正投影内。也即是，该荧光粉层0011在承载基板0021上的正投影的区域，位于荧光粉层0011被激光光束照射之后产生的热量所能够传导的区域内，热量能够传导的范围较大，增加了荧光转换部件00的散热能力。
示例的，该导热层003在该承载基板0021上的正投影的面积，可以为荧光粉层0011在该承载基板0021上的正投影的面积的一倍至三倍。
图33是本申请实施例提供的再一种荧光转换部件的结构示意图。图36是本申请实施例提供的再一种荧光转换部件的结构示意图。参考图33和图34可以看出，该荧光转换部件00还可以包括：光学增透膜008。该光学增透膜008可以位于该荧光粉层0011远离反射层0012的一面。
也即是，当激光光束照射至该荧光转换部件00时，可以从该光学增透膜008透射后再照射至荧光粉层0011。其中，该光学增透膜008可以有效避免激光光束所对应的颜色被反射。示例的，假设激光光束为蓝色激光光束，则该光学增透膜008可以避免蓝光被反射，即可以避免波长范围为420nm至470nm的光被反射。
可选的，该光学增透膜008的厚度范围可以为0.5μm至10μm。示例的，该光学增透膜008的厚度可以为5μm。
图35是本申请实施例提供的再一种荧光转换部件的结构示意图。参考图35可以看出，该荧光转换部件00还可以包括：驱动组件009。该驱动组件009可以与承载基板0021连接，该驱动组件009可以用于驱动承载基板0021，焊料层0013，导热层003以及荧光转化组件001旋转。
示例的，参考图35，该驱动组件009可以位于承载基板0021远离荧光转化组件001的一面，且与承载基板0021连接。
可选的，该驱动组件009可以为驱动电机或驱动马达。本申请实施例对该驱动组件009的具体实现形式不做限定。
在本申请实施例中，通过设置驱动组件009，可以驱动该荧光转化组件001以较高的速度旋转，从而避免荧光粉层0011中被激光光束照射的区域的热量较高导致荧光粉层0011转化荧光的效率较差。
综上所述，本申请实施例提供了一种荧光转换部件，该荧光转换部件可以包括：承载基板，焊接结构层，导热层以及荧光转化组件。该荧光转化组件中的荧光粉层被激光光束照射之后产生的热量，可以传导至导热层的各个区域，避免了荧光粉层中局部区域的温度较高的问题，保证荧光粉层转换荧光的效率，进而确保显示系统的显示效果。
图36是本申请实施例提供的一种荧光转换部件的制造方法的流程图。参考图36可以看出，该方法可以包括：
步骤101、提供荧光转化组件、承载组件以及导热层。
该荧光转化组件001可以包括层叠设置的荧光粉层0011以及反射层0012，该承载组件002可以包括承载基板0021。
步骤102、在反射层远离荧光粉层的一面形成焊料层。
步骤103、通过焊料层将荧光转化组件与承载组件焊接。
在本申请实施例中，该焊料层0013可以位于反射层0012远离荧光粉层0011的一侧，导热层003可以位于荧光转化组件001中，或者导热层003可以位于承载基板0021上。荧光粉层0011可以在激光光束的照射下产生荧光，该荧光可以被反射层0012反射后照射在显示组件上，该反射层0012能够有效反射荧光粉层0011产生的荧光。
采用本申请实施例提供的制造方法制造得到的荧光转换部件00中设置有导热层003，荧光粉层0011被激光光束照射后产生的热量，可以传导至导热层003的各个区域，该荧光转换部件00各个区域的热量差异较小，避免由于荧光转换部件00中被激光光束照射的区域的热量较高导致荧光粉层0011转化荧光的效率较差，进而影响显示系统的显示效果。
综上所述，本申请实施例提供了一种荧光转换部件的制造方法，该荧光转换部件包括：荧光转化组件，承载组件以及导热层。该荧光转化组件包括荧光粉层和反射层。该荧光粉层被激光光束照射之后产生的热量，可以传导至导热层的各个区域，避免了荧光粉层中局部区域的温度较高的问题，保证荧光粉层转换荧光的效率，显示系统的显示效果较好。
图37是本申请实施例提供的另一种荧光转换部件的制造方法的流程图。参考图37可以看出，该方法可以包括：
步骤201、采用晶体生长的方式形成荧光粉层。
在本申请实施例中，可以采用YAG荧光粉和陶瓷通过晶体生长的方式形成荧光粉层0011，该荧光粉层0011也可以称为陶瓷荧光粉层。或者，可以仅采用YAG荧光粉通过晶体生长的方式形成荧光粉层，该荧光粉层0011也可以称为单晶荧光粉层。
当然，也可以采用YAG荧光粉和陶瓷通过高温烧结的方式形成荧光粉层0011。或者可以仅采用YAG荧光粉通过高温烧结的方式形成荧光粉层0011。本申请实施例对形成该荧光粉层0011的材料和方式不做限定。
步骤202、在荧光粉层的一面形成光学增透膜。
在本申请实施例中，可以通过蒸镀或溅射的方式在荧光粉层0011的一面形成光学增透膜008。该光学增透膜008可以有效避免激光光束所对应的颜色被反射。示例的，当蓝色激光光束照射至该荧光转换部件00时，该光学增透膜008可以有效避免蓝光被反射。
需要说明的是，该荧光粉层0011的一面还可以不形成该光学增透膜008，当该荧光粉层0011的一面未形成光学增透膜008时，可以对该荧光粉层0011靠近激光光束的一面进行粗糙处理，增大该荧光粉层0011靠近激光光束的一面的粗糙度，从而减少激光光束的反射。
步骤203、在荧光粉层远离光学增透膜的一面形成反射层。
在本申请实施例中，反射层0012的材料可以包括：介质或金属。当该反射层0012的材料为金属时，可以通过电镀的方式在荧光粉层0011远离光学增透膜008的一面形成该反射层0012。当该反射层0012的材料为介质时，可以通过蒸镀或溅射的方式在荧光粉层0011远离光学增透膜008的一面形成该反射层0012。该反射层0012可以用于反射荧光粉层0011在激光光束的照射下产生的荧光。
步骤204、在反射层远离荧光粉层的一面形成导热层。
在本申请实施例中，可以通过电镀或气相沉积的方式在反射层0012远离荧光粉层0011的一面形成导热层003。该导热层003的导热效率较高，荧光粉层0011被激光光束照射后产生的热量可以迅速传导至导热层003的各个区域，可以避免荧光粉层0011的局部温度较高，提高了荧光转换部件的散热能力。
步骤205、在导热层远离反射层的一面形成第一阻焊层。
在本申请实施例中，可以采用镍通过电镀或气相沉积的方式在导热层003远离反射层0012的一面形成第一阻焊层005。由于镍的导热性能较好，因此，荧光粉层0011被激光光束照射之后产生的热量也能够传导至该第一阻焊层005，进一步提高该荧光转换部件的散热能力。
步骤206、在第一阻焊层远离导热层的一面形成第一金属可焊层。
在本申请实施例中，可以采用金通过电镀或气相沉积的方式在第一阻焊层005远离导热层003的一侧形成第一金属可焊层004。
步骤207、在第一金属可焊层远离第一阻焊层的一面形成焊料层。
在本申请实施例中，可以采用金锡合金通过电镀或气相沉积的方式在第一金属可焊层004远离第一阻焊层005的一面形成焊料层0013。示例的，可以采用质量分数为80％的金 和质量分数为20％的锡通过电镀或气相沉积的方式在第一金属可焊层004远离第一阻焊层005的一面形成该焊料层0013，该焊料层0013还可以称为金锡共晶层。
步骤208、在承载基板的一面形成第二阻焊层。
在本申请实施例中，可以采用镍通过电镀或气相沉积的方式在承载基板0021的一面形成第二阻焊层007。由于镍的导热性能较好，因此，荧光粉层0011被激光光束照射之后产生的热量也能够传导至该第二阻焊层007，进一步提高该荧光转换部件的散热能力。
步骤209、在第二阻焊层远离承载基板的一面形成第二金属可焊层。
在本申请实施例中，可以采用金通过电镀或气相沉积的方式在第二阻焊层007远离承载基板0021的一侧形成第二金属可焊层006。
步骤210、加热焊料层，通过该焊料层将第一金属可焊层和第二金属可焊层焊接。
由于焊料层0013已经沉积形成在荧光转化组件001上，因此可以先加热焊料层0013，并将焊料层0013层叠在第二金属可焊层006远离第二阻焊层007的一面。也即是，通过焊料层0013将第一金属可焊层004和第二金属可焊层006焊接，保证制造得到的荧光转换部件00的质量。
图38是本申请实施例提供的另一种荧光转换部件的制造方法的流程图。参考图38可以看出，该方法可以包括：
步骤301、采用晶体生长的方式形成荧光粉层。
步骤302、在荧光粉层的一面形成光学增透膜。
步骤303、在荧光粉层远离光学增透膜的一面形成反射层。
步骤304、在导热层远离反射层的一面形成第一阻焊层。
步骤305、在第一阻焊层远离反射层的一面形成第一金属可焊层。
步骤306、在第一金属可焊层远离第一阻焊层的一面形成焊料层。
步骤307、在承载基板的一面形成导热层。
步骤308、在导热层远离承载基板的一面形成第二阻焊层。
步骤309、在第二阻焊层远离导热层的一面形成第二金属可焊层。
步骤310、加热焊料层，通过该焊料层将第一金属可焊层和第二金属可焊层焊接。
在本申请实施例中，步骤301至步骤310的制造方法可以参考上述步骤201至步骤210，本申请实施例在此不再赘述。
需要说明的是，本申请实施例提供的荧光转换部件的制造方法的步骤的先后顺序可以进行适当调整，步骤也可以根据情况进行相应增减。例如，步骤208至步骤210可以在步骤201之前执行，步骤307至步骤310可以在步骤301之前执行，步骤202和步骤302可以根据情况删除。任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化的方法，都应涵盖在本申请的保护范围之内，因此不再赘述。
综上所述，本申请实施例提供了一种荧光转换部件的制造方法，该荧光转换部件包括：荧光转化组件、承载组件以及导热层。该荧光转化组件中的荧光粉层被激光光束照射之后产生的热量，可以传导至导热层的各个区域，避免荧光粉层中局部区域的温度较高的问题，保证荧光粉层转换荧光的效率，显示系统的显示效果较好。
图39是本申请实施例提供的一种光源装置的结构示意图。参考图39可以看出，该光源装置40可以包括激光器401以及上述实施例提供的荧光转换部件00。该荧光转换部件00可以为图1至图16，或图20至图35任一所示的荧光转换部件。
该激光器401可以用于产生激光光束，该荧光转换部件00可以用于在激光光束的照射下产生荧光。
参考图39可以看出，该光源装置40还可以包括：整形光路402，第一扩散组件403，二向色镜404，第二扩散组件405，以及反射板406。
在本申请实施例中，激光器401可以用于发出蓝色激光光束，该蓝色激光光束可以依次经过整形光路402，第一扩散组件403，以及二向色镜404聚焦照射至荧光转换部件00中的荧光转化材料层0011，该荧光转化材料层0011在蓝色激光光束的高能量激发下产生荧光。该荧光转换部件00可以包括反射部和投射部。其中该反射部可以涂覆有红色荧光粉和绿色荧光粉中的至少一种。该透射部可以为透明材质，可以用于透射蓝色激光光束。
该荧光转换部件00靠近激光器401的一侧设置有第一透镜组件407，该第一透镜组件407具有聚焦和准直的双重作用。当激光器401发出蓝色激光光束经过该第一透镜组件407时，该第一透镜组件407能够使蓝色激光光束聚焦成较小的光斑。
当荧光转换部件00旋转至反射部的位置时，该蓝色激光光束可以照射至反射部的荧光粉，从而激发出红色荧光或绿色荧光。其中，受激的红色荧光或绿色荧光可以被该荧光转换部件00中的反射层0012反射，并透过第一透镜组件407，最后经过二向色镜404反射至光源出口，从而输出红色荧光或绿色荧光。
当荧光转换部件00旋转至透射部的位置时，该荧光转换部件00可以允许该蓝色激光光束从该透射部透射过去。由于蓝色激光光束经过第一透镜组件407聚焦之后还会发散，因此蓝色激光光束到达荧光转换部件00远离激光器401的另一侧时，还需对该蓝色激光光束进行准直。因此该荧光转换部件远离激光器401的一侧设置有第二透射组件408，该第二透射组件408可以用于对从荧光转换部件00透射过去的蓝色激光光束进行准直，以平行光束照射至反射板406，并通过第二扩散组件405扩散均匀化之后，透过二向色镜404至光源出口，从而输出蓝光。
在本申请实施例中，由于光路是可逆的，因此第一透镜组件407和第二透镜组件408可以相对于荧光转换部件对称，且该第一透镜组件407和第二透镜组件408的类型可以相同。
可选的，第一透镜组件407和第二透镜组件408可以均包括一个球面透镜和一个超球面透镜。
参考图39还可以看出，该光源装置40可以包括：滤色组件409和匀光积分器件410。该滤色组件409可以用于滤除需输出的颜色之外的颜色的光。例如，需输出的光为蓝光，则该滤色组件409可以用于滤除除蓝色之外的颜色的光。该匀光积分器件410可以将输出的光照射至显示组件，从而输出图像。
图40是本申请实施例提供的一种显示系统的结构示意图。参考图40可以看出，该显 示系统可以包括：上述实施例提供的光源装置40，数字微镜器件(digital micromirror device，DMD)50，以及显示组件60。
该DMD 50可以在芯片的控制下，将光源装置40输出的光反射至显示组件60，该显示组件60可以实现图像显示。其中，该显示组件60可以为投影镜头。
以上所述仅为本申请的可选实施例，并不用以限制本申请，凡在本申请的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本申请的保护范围之内。

Claims (19)

  1. 一种荧光转换部件，其特征在于，所述荧光转换部件包括：荧光转化组件、承载组件、导热层以及焊料层；
    所述荧光转化组件包括：层叠设置的荧光转化材料层以及反射层；
    所述承载组件包括：承载基板；
    所述焊料层位于所述荧光转化组件和所述承载组件之间，所述荧光转化组件和所述承载组件通过所述焊料层焊接；
    所述导热层位于所述荧光转化组件中，或者，所述导热层位于所述承载基板上。
  2. 根据权利要求1所述的荧光转换部件，其特征在于，所述荧光转换部件还包括：第一金属可焊层；
    所述第一金属可焊层位于所述焊料层与所述反射层之间。
  3. 根据权利要求2所述的荧光转换部件，其特征在于，所述荧光转换部件还包括：第一阻焊层；
    第一阻焊层位于所述第一金属可焊层靠近所述反射层的一面。
  4. 根据权利要求1所述的荧光转换部件，其特征在于，所述荧光转换部件还包括：第二金属可焊层；
    所述第二金属可焊层位于所述承载基板的一面。
  5. 根据权利要求4所述的荧光转换部件，其特征在于，所述荧光转换部件还包括：第二阻焊层；
    所述第二阻焊层位于所述第二金属可焊层靠近所述承载基板的一面。
  6. 一种荧光转换部件，其特征在于，所述荧光转换部件包括：荧光转化组件、承载组件以及导热层；
    所述荧光转化组件包括：层叠设置的荧光转化材料层、反射层以及焊料层；
    所述承载组件包括：承载基板；
    所述荧光转化组件通过所述焊料层与所述承载组件焊接；
    所述导热层位于所述荧光转化组件中，或者，所述导热层位于所述承载基板上。
  7. 根据权利要求6所述的荧光转换部件，其特征在于，所述荧光转换部件还包括：第一金属可焊层；
    所述第一金属可焊层位于所述焊料层与所述反射层之间。
  8. 根据权利要求7所述的荧光转换部件，其特征在于，所述荧光转换部件还包括：第一阻焊层；
    第一阻焊层位于所述第一金属可焊层远离所述焊料层的一面。
  9. 根据权利要求6所述的荧光转换部件，其特征在于，所述荧光转换部件还包括：第二金属可焊层；
    所述第二金属可焊层位于所述承载基板的一面。
  10. 根据权利要求9所述的荧光转换部件，其特征在于，所述荧光转换部件还包括：第二阻焊层；
    所述第二阻焊层位于所述第二金属可焊层远离所述承载基板的一面。
  11. 根据权利要求1或6所述的荧光转换部件，其特征在于，在所述导热层位于所述荧光转化组件中时，
    所述焊料层、所述导热层、所述反射层以及所述荧光转化材料层沿远离所述承载基板的方向依次层叠设置。
  12. 根据权利要求1至10任一所述的荧光转换部件，其特征在于，所述焊料层的材料包括：金锡合金，或，烧结银。
  13. 根据权利要求1至10任一所述的荧光转换部件，其特征在于，所述导热层的材料包括：银、铜、金以及铝中的至少一种。
  14. 根据权利要求1至10任一所述的荧光转换部件，其特征在于，所述导热层的厚度范围为10微米至200微米。
  15. 根据权利要求1至10任一所述的荧光转换部件，其特征在于，所述荧光转换部件还包括：光学增透膜；
    所述光学增透膜位于所述荧光转化材料层远离所述反射层的一面。
  16. 一种荧光转换部件的制造方法，其特征在于，所述方法包括：
    提供荧光转化组件、承载组件以及导热层，所述荧光转化组件包括层叠设置的荧光转化材料层以及反射层，所述承载组件包括承载基板；
    提供焊料层；
    通过所述焊料层将所述荧光转化组件与所述承载组件焊接；
    其中，所述导热层位于所述荧光转化组件中，或者，所述导热层位于所述承载基板上。
  17. 一种荧光转换部件的制造方法，其特征在于，所述方法包括：
    提供荧光转化组件、承载组件以及导热层，所述荧光转化组件包括层叠设置的荧光粉层以及反射层，所述承载组件包括承载基板；
    在所述反射层远离所述荧光粉层的一面形成焊料层；
    通过所述焊料层将所述荧光转化组件与所述承载组件焊接；
    其中，所述导热层位于所述荧光转化组件中，或者，所述导热层位于所述承载基板上。
  18. 一种光源装置，其特征在于，所述光源装置包括：激光器以及权利要求1至15任一所述的荧光转换部件。
  19. 一种显示系统，其特征在于，所述显示系统包括：权利要求18所述的光源装置。
PCT/CN2020/121629 2019-09-19 2020-10-16 荧光转换部件及其制造方法、光源装置、显示系统 WO2021052512A1 (zh)

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