TWI626293B - Anisotropic conductive adhesive - Google Patents

Anisotropic conductive adhesive Download PDF

Info

Publication number
TWI626293B
TWI626293B TW102133614A TW102133614A TWI626293B TW I626293 B TWI626293 B TW I626293B TW 102133614 A TW102133614 A TW 102133614A TW 102133614 A TW102133614 A TW 102133614A TW I626293 B TWI626293 B TW I626293B
Authority
TW
Taiwan
Prior art keywords
particles
anisotropic conductive
conductive
conductive adhesive
solder particles
Prior art date
Application number
TW102133614A
Other languages
English (en)
Other versions
TW201412933A (zh
Inventor
Akira Ishigami
Shiyuki Kanisawa
Hidetsugu Namiki
Masaharu Aoki
Original Assignee
Dexerials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dexerials Corp filed Critical Dexerials Corp
Publication of TW201412933A publication Critical patent/TW201412933A/zh
Application granted granted Critical
Publication of TWI626293B publication Critical patent/TWI626293B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B23K35/025—Pastes, creams, slurries
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/5328—Conductive materials containing conductive organic materials or pastes, e.g. conductive adhesives, inks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/04—Mounting of components, e.g. of leadless components
    • H05K13/046—Surface mounting
    • H05K13/0465—Surface mounting by soldering
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3485—Applying solder paste, slurry or powder
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/001—Conductive additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00—Use of pretreated ingredients
    • C08K9/02—Ingredients treated with inorganic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/06102—Disposition the bonding areas being at different heights
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16238—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • H01L2224/1701—Structure
    • H01L2224/1703—Bump connectors having different sizes, e.g. different diameters, heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • H01L2224/1705—Shape
    • H01L2224/17051—Bump connectors having different shapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H01L2224/81805—Soldering or alloying involving forming a eutectic alloy at the bonding interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/819—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector with the bump connector not providing any mechanical bonding
    • H01L2224/81901—Pressing the bump connector against the bonding areas by means of another connector
    • H01L2224/81903—Pressing the bump connector against the bonding areas by means of another connector by means of a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H01L2224/9211—Parallel connecting processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Led Device Packages (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Conductive Materials (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

本發明係提供一種可獲得高放熱性之異向性導電接著劑。使導電性粒子31與焊料粒子32分散於黏合劑。使用該異向性導電接著劑而熱壓接而成之LED構裝體，其LED元件之端子(電極12a、14a)與基板之端子(電極22a、23a)係經由導電性粒子31而電性連接，並且LED元件之端子與基板之端子間進行焊接。

Description

異向性導電接著劑
本發明關於一種分散有導電性粒子之異向性導電接著劑，特別是關於可將驅動IC(Integrated Circuit)、LED(Light Emitting Diode)等晶片(元件)所產生之熱放出的異向性導電接著劑。
本申請案係基於在日本於2012年9月24日申請之日本專利申請案編號特願2012-210224而主張優先權者，藉由參照該申請案而引用於本申請案中。
以往，作為將LED元件構裝於基板之方法係使用線接合方法。線接合方法係如圖6所示般，將LED元件之電極(第1導電型電極104a及第2導電型電極102a)面朝上(face up)，利用線接合(WB)301a、301b進行該LED元件與基板之電性連接，於LED元件與基板之接著係使用晶粒接合(die bond)材302。
但是，如此之利用線接合而獲得電性連接的方法中，由於會有來自電極(第1導電型電極104a及第2導電型電極102a)之線接合的物理性破裂、剝離之風險，因此被要求有更為可靠之高技術。進而，晶粒接合材302之硬化步驟由於係藉由烘箱硬化而進行，因此生產需要時間。
作為未使用線接合之方法，如圖7所示有如下之方法：將LED元件之電極(第1導電型電極104a及第2導電型電極102a)面朝向基板側(倒裝(face down)、覆晶(flip chip))，該LED元件與基板之電性連 接使用以銀糊為代表之導電性糊303a、303b的方法。
但是，因導電性糊303a、303b接著力弱，因此必須以密封樹脂304補強。進而，密封樹脂304之硬化步驟係藉由烘箱硬化而進行，因此生產需要時間。
作為未使用導電性糊之方法，如圖8所示有如下之方法：將LED元件之電極面朝向基板側(倒裝(face down)、覆晶(flip chip))，該LED元件與基板之電性連接及接著使用異向性導電接著劑，該異向性導電接著劑係於絕緣性之接著劑黏合劑305中使導電性粒子306分散而成。由於異向性導電接著劑之接著步驟短，因此生產效率佳。又，異向性導電接著劑便宜，並且透明性、接著性、耐熱性、機械強度、電絕緣性等優異。
又，近年，開發有用以進行覆晶構裝之LED元件。該FC構裝用LED元件可藉由鈍化材(passivation)105來獲得使電極面積增大之設計，故而可進行無凸塊(bumpless)構裝。又，藉由於發光層下設置反射膜而使光提取(light extraction)效率變佳。
作為將FC構裝用LED元件構裝於基板之方法，如圖9所示使用有金錫共晶接合(eutectic bonding)。金錫共晶接合係藉由以金與錫之合金307形成晶片電極，將助熔劑塗佈於基板，裝載晶片並加熱，藉此使得與基板電極共晶接合之方法。但是，如此之焊接方法會有因加熱中晶片偏移或未完全洗淨之助熔劑造成對可靠性之不良影響，故產率會較差。又，需要高精度之構裝技術。
作為未使用金錫共晶之方法，如圖10所示係於LED元件之電極面與基板電性連接使用焊料糊的焊接方法。但是，如此之焊接方法，由於糊具有等向性之導電性，因此pn電極間會短路而產率差。
作為未使用焊料糊之方法，如圖11所示有如下之方法：LED元件與基板電性連接及接著，係與圖8相同地使用於絕緣性黏合劑中分散 導電性粒子而成之ACF等異向性導電接著劑的方法。異向性導電接著劑於pn電極間填充有絕緣性黏合劑。因此，不易發生短路，故產率佳。又，因接著步驟短，故而生產效率佳。
然而，LED元件之活性層(junction)103，除光以外會產生較多之熱，若發光層溫度(Tj=junction溫度)為100℃以上，則LED之發光效率下降，LED之壽命變短。因此，必須要有使活性層103之熱可有效率地擴散之構造。
如圖6所示之WB構裝中，活性層103係位於LED元件之上側，因此所產生之熱無法效率佳地傳至基板側，故放熱性較差。
又，如圖7、9、10所示若進行覆晶構裝，則活性層103係位於基板側，因此熱會效率佳地傳至基板側。如圖7、10所示，當電極間以導電性糊303a、303b來連接時，可高效率地進行放熱，但以導電性糊303a、303b所進行之連接會如上所述般連接可靠性較差。
又，如圖9所示，當進行金錫共晶接合時，亦如上述相同地連接可靠性較差。
又，如圖8、11所示，未使用導電性糊303a、303b而利用ACF(Anisotropic conductive film)或ACP(Anisotropic Conductive Paste)等異向性導電接著劑來進行覆晶構裝，藉此活性層103被配置靠近基板側，熱會效率佳地傳至基板側。又，接著力高故可獲得高連接可靠性。
【專利文獻1】日本特開平11-4064號公報
【專利文獻2】日本特開昭60-178690號公報
【專利文獻3】日本特開平11-176879號公報
【專利文獻4】日本特開平8-186156號公報
然而，以往之異向性導電接著劑之硬化物的導熱率為0.2W/(m．K)左右，因此無法將產生自LED元件之熱充分地擴散至基板側。又，使用異向性導電接著劑之覆晶構裝中，僅電性連接部分之導電性粒子會成為放熱途徑，因此放熱性較差。
本發明係以上述之過往實情為鑑而提出者，其係提供一種可獲得高放熱性之異向性導電接著劑。
本案發明人進行努力研究，結果發現藉由將於樹脂粒子表面形成有導電性金屬層之導電性粒子與焊料粒子進行調配，而可達成上述目的，進而完成本發明。
即，本發明之異向性導電接著劑之特徵在於，係於樹脂粒子表面形成有導電性金屬層之導電性粒子與焊料粒子分散於接著劑成分而成。
又，本發明之連接構造體，係第1電子零件之端子與第2電子零件之端子經由於樹脂粒子表面形成有導電性金屬層之導電性粒子而電性連接而成者，其特徵在於，上述第1電子零件之端子與上述第2電子零件之端子之間係進行焊接而成。
根據本發明，於壓接時導電性粒子藉由抵壓而扁平變形，並且焊料粒子被壓碎而加以焊接，因此相對之端子間的接觸面積會增加，可獲得高放熱性。
11‧‧‧元件基板
12‧‧‧第1導電型包覆層
12a‧‧‧第1導電型電極
13‧‧‧活性層
14‧‧‧第2導電型包覆層
14a‧‧‧第2導電型電極
21‧‧‧基材
22‧‧‧第1導電型用電路圖案
22a‧‧‧電極
23‧‧‧第2導電型用電路圖案
23a‧‧‧電極
15‧‧‧鈍化材
31‧‧‧導電性粒子
32‧‧‧焊料粒子
33‧‧‧黏合劑
101‧‧‧元件基板
102‧‧‧第1導電型包覆層
103‧‧‧活性層
104‧‧‧第2導電型包覆層
105‧‧‧鈍化材
201‧‧‧基材
202‧‧‧第1導電型用電路圖案
203‧‧‧第2導電型用電路圖案
301‧‧‧線接合
302‧‧‧晶粒接合材
303‧‧‧導電性糊
304‧‧‧密封樹脂
305‧‧‧黏合劑
306‧‧‧導電性粒子
307‧‧‧金錫合金
圖1係示意性地表示於壓接前相對之端子間的剖面圖。
圖2係示意性地表示於壓接後相對之端子間的剖面圖。
圖3係表示本發明之一實施形態之LED構裝體的一例剖面圖。
圖4係表示本發明之其他實施形態之LED構裝體的一例剖面圖。
圖5係表示對應於焊料粒子之調配量之熱阻值的圖表。
圖6係表示利用線接合方法而得之LED構裝體的一例剖面圖。
圖7係表示用有導電性糊之LED構裝體的一例剖面圖。
圖8係表示用有異向性導電接著劑之LED構裝體的一例剖面圖。
圖9係表示利用金錫共晶接合將FC構裝用LED進行構裝而成的LED構裝體之一例剖面圖。
圖10係表示利用導電性糊將FC構裝用LED進行構裝而成的LED構裝體之一例剖面圖。
圖11係表示利用異向性導電接著劑將FC構裝用LED進行構裝而成的LED構裝體之一例剖面圖。
以下，針對本發明之實施形態，一面參照圖式一面依如下順序進行說明。
1.異向性導電接著劑及其製造方法
2.連接構造體及其製造方法
3.實施例
〈1.異向性導電接著劑及其製造方法〉
本實施形態之異向性導電接著劑係於黏合劑(接著劑成分)中分散有導電性粒子與焊料粒子，該導電性粒子係於樹脂粒子表面形成有導電性金 屬層，異向性導電接著劑之形狀為糊狀、膜狀等，可依其目的而適當選擇。
圖1及圖2分別示意性地表示壓接前及壓接後相對之端子間的剖面圖。本實施形態中，可藉由使異向性導電接著劑成為下述之構成，而在壓接前使導電性粒子31與焊料粒子32存在於端子間。此外，壓接時，芯材中用有樹脂粒子之導電性粒子經抵壓而扁平變形，並且相對於變形會產生反彈，因此可維持電性連接狀態。又，壓接時，由於焊料粒子32會隨著導電性粒子之扁平變形而被壓碎，並且經加熱而以焊接進行金屬接合，故而與端子接觸之面積會增大，可提高放熱性及電特性。又，樹脂核心之導電性粒子可緩和因基板與元件之熱膨脹不同所產生之應力，因此可防止於焊接部產生裂痕，並且使連接可靠性提高。
導電性粒子係以Au、Ni、Zn等金屬被覆環氧樹脂、酚系樹脂、丙烯酸系樹脂、丙烯腈-苯乙烯(AS)樹脂、苯胍嗪樹脂、二乙烯苯系樹脂、苯乙烯系樹脂等樹脂粒子之表面而成的金屬被覆樹脂粒子。金屬被覆樹脂粒子由於在壓縮時容易被壓碎且容易變形，因此可增大與配線圖案之接觸面積，又，可吸收配線圖案高度之偏差。
又，就連接可靠性及絕緣可靠度之觀點來看，導電性粒子之調配量相對於黏合劑較佳為1~30體積%。又，導電性粒子之平均粒徑(D50)較佳為1~10μm，更佳為2~6μm。
焊料粒子可視電極材料或連接條件等而適當地從例如JIS Z 3282-1999所規定之Sn-Pb系、Pb-Sn-Sb系、Sn-Sb系、Sn-Pb-Bi系、Bi-Sn系、Sn-Cu系、Sn-Pb-Cu系、Sn-In系、Sn-Ag系、Sn-Pb-Ag系、Pb-Ag系等選擇。再者，焊料粒子之形狀可適當地選擇粒狀、鱗片狀等。此外，焊料粒子亦能藉由絕緣層被覆以提高異向性。
焊料粒子之調配量較佳為1~30體積%。若焊料粒子過少則無法獲得優異之放熱性，若調配量過多則損及異向性而無法獲得連接可靠 性。
又，焊料粒子之平均粒徑(D50)較佳為導電性粒子之平均粒徑的25~400%。若焊料粒子相對於導電性粒子過小，則壓接時焊料粒子不會被補捉至相對之端子間，無法進行良好之焊接並且無法獲得優異之放熱性。另一方面，若焊料粒子相對於導電性粒子過大，則會損及異向性，而無法獲得連接可靠性。
黏合劑可利用以往之異向性導電接著劑或異向性導電膜中所使用之接著劑組成物。作為接著劑組成物，較佳可列舉以脂環式環氧化合物、雜環系環氧化合物或氫化環氧化合物等作為主成分而成之環氧硬化系接著劑。
作為脂環式環氧化合物，較佳可列舉分子內具有2個以上環氧基者。該等可為液狀，亦可為固體狀。具體而言，可列舉：環氧丙基六氫雙酚A、3,4-環氧環己烯基甲基-3',4'-環氧環己烯羧酸酯等。其中，就可確保硬化物有適合LED元件構裝等之透光性，且速硬化性亦優異之方面而言，可較佳地使用3,4-環氧環己烯基甲基-3',4'-環氧環己烯羧酸酯。
作為雜環系環氧化合物，可列舉具有三環之環氧化合物，尤其較佳為可列舉1,3,5-三(2,3-環氧基丙基)-1,3,5-三-2,4,6-(1H,3H,5H)-三酮。
作為氫化環氧化合物，可使用上述脂環式環氧化合物或雜環系環氧化合物之氫化物或其他公知之氫化環氧樹脂。
脂環式環氧化合物、雜環系環氧化合物或氫化環氧化合物可單獨使用，亦可併用2種以上。又，除該等環氧化合物以外，只要無損本發明之效果，亦可併用其他環氧樹脂。例如，可列舉雙酚A、雙酚F、雙酚S、四甲基雙酚A、二芳基雙酚A、對苯二酚、鄰苯二酚、間苯二酚、甲酚、四溴雙酚A、三羥基聯苯、二苯甲酮、雙間苯二酚、雙酚六氟丙酮、四甲 基雙酚A、四甲基雙酚F、三(羥苯基)甲烷、聯二甲苯酚、苯酚酚醛清漆、甲酚酚醛清漆等多元酚與表氯醇進行反應所獲得之環氧丙基醚；使甘油、使新戊二醇、乙二醇、丙二醇、丁二醇、己二醇、聚乙二醇、聚丙二醇等脂肪族多元醇與表氯醇進行反應所獲得之聚環氧丙基醚；如對羥基苯甲酸、β-羥基萘甲酸之類之羥基羧酸與表氯醇進行反應所獲得之環氧丙基醚酯；自如苯二甲酸、甲基鄰苯二甲酸、間苯二甲酸、對苯二甲酸、四氫鄰苯二甲酸、內亞甲基四氫鄰苯二甲酸(endomethylenetetrahydrophthalic acid)、內亞甲基六氫鄰苯二甲酸、1,2,4-苯三甲酸、聚合脂肪酸之類之聚羧酸所獲得之聚環氧丙基酯；自胺基苯酚，胺基烷基苯酚所獲得之環氧丙基胺基環氧丙基醚；自胺基苯甲酸所獲得之環氧丙基胺基環氧丙酯；自苯胺、甲苯胺、三溴苯胺、伸二甲苯二胺、二胺基環己烷、雙胺基甲基環己烷、4,4-二胺基二苯甲烷、4,4-二胺基二苯基碸等所獲得之環氧丙胺；環氧化聚烯烴等公知之環氧樹脂類。
硬化劑可列舉酸酐、咪唑化合物、雙氰等。其中，可較佳地使用不易使硬化物變色之酸酐、尤其是脂環式酸酐系硬化劑。具體而言，可較佳地列舉甲基六氫鄰苯二甲酸酐等。
接著劑組成物中，當使用脂環式環氧化合物與脂環式酸酐系硬化劑時，其分別之使用量，若脂環式酸酐系硬化劑過少則未硬化環氧化物會變多，若過多則於剩餘之硬化劑影響下被接體材料之腐蝕會有受到促進的傾向，因此相對於脂環式環氧化合物100質量份較佳為以80~120質量份之比例使用脂環式酸酐系硬化劑，更佳為以95~105質量份之比例使用。
由如此之構成所組成的異向性導電接著劑，壓接時導電性粒子會因抵壓而扁平變形，同時焊料粒子被壓碎，並且藉由加熱之焊接而進行金屬結合，因此可獲得高放熱性及高連接可靠性。
又，本實施形態中異向性導電接著劑可藉由使接著劑組成 物、導電性粒子、焊料粒子均勻地混合而製造。
<2.連接構造體及其製造方法>
繼而，針對使用有前述之異向性導電接著劑的連接構造體進行說明。本實施形態中之連接構造體，其第1電子零件之端子與第2電子零件之端子係經由於樹脂粒子表面形成有導電性金屬層之導電性粒子而電性連接而成者，其中，平均粒徑小於導電性粒子之焊料粒子捕捉於第1電子零件之端子與上述第2電子零件之端子間。
作為本實施形態中之電子零件，較佳為進行放熱之驅動IC(Integrated Circuit)、LED(Light Emitting Diode)等晶片(元件)。
圖3係表示LED構裝體構成例之剖面圖。該LED構裝體係將LED元件與基板使用異向性導電接著劑所連接而成，該異向性導電接著劑係於接著劑成分中分散上述之導電性粒子與焊料粒子而成。
LED元件係例如由藍寶石構成之元件基板11上具備例如由n-GaN構成之第1導電型包覆層12、例如由InxAlyGa1-x-yN層構成之活性層13、與例如由p-GaN構成之第2導電型包覆層14，即具有所謂之雙異質(doublehetero)構造。又，於第1導電型包覆層12上之一部分具備第1導電型電極12a，於第2導電型包覆層14上之一部分具備第2導電型電極14a。若於LED元件之第1導電型電極12a與第2導電型電極14a之間施加電壓，則於活性層13中藉由載體(carrier)集中、再結合而產生發光。
基板於基材21上具備第1導電型用電路圖案22與第2導電型用電路圖案23，並且在對應於LED元件之第1導電型電極12a及第2導電型電極14a之位置分別具有電極22a及電極23a。
異向性導電接著劑係與上述相同地於黏合劑33中分散有導電性粒子31與焊料粒子32。
如圖3所示，LED構裝體之LED元件之端子(電極12a、14a) 與基板之端子(電極22a、23a)係經由導電性粒子31而電性連接，並且LED元件之端子與基板之端子間會進行焊接。
藉此，可有效率地使利用LED元件之活性層13所產生之熱擴散至基板側，防止發光效率下降同時亦可使LED構裝體壽命變長。又，焊料粒子32由於為白或灰色之無色彩者，故可將來自活性層13之光反射，並且獲得高亮度。
又，如圖4所示，用以覆晶構裝之LED元件係藉由鈍化材15而將LED元件之端子(電極12a、14a)設計成較大，故於LED元件之端子(電極12a、14a)與基板之端子(電路圖案22、23)之間導電性粒子31及焊料粒子32會較多地被捕捉。藉此，可更有效率地使LED元件之活性層13所產生之熱擴散至基板側。
接著，針對上述之連接構造體之製造方法進行說明。本實施形態之構裝體之製造方法係將異向性導電接著劑夾持於第1電子零件之端子與第2電子零件之端子間，並且將第1電子零件與第2電子零件加以熱壓接，該異向性導電接著劑係於接著劑成分中分散有上述之導電性粒子及平均粒徑小於導電性粒子之焊料粒子。
藉此，第1電子零件之端子與第2電子零件之端子經由導電性粒子而電性連接，可獲得第1電子零件之端子與第2電子零件之端子間經焊接而成之連接構造體。
本實施形態中之連接構造體之製造方法，於壓接時導電性粒子因抵壓而扁平變形，同時焊料粒子被壓碎並且藉由加熱之焊接而進行金屬結合，因此相對之端子間的接觸面積會增大，可獲得高放熱性極高連接可靠性。又，樹脂核心之導電性粒子會緩和因基板與元件之熱膨脹不同所產生之應力，因此可防止於焊接部產生裂痕。
<3.實施例>
以下，詳細說明本發明之實施例，但本發明並非為限定於該等實施例者。
本實驗中製作調配有焊料粒子之異向性導電接著劑(ACP)，製作LED構裝體，並對放熱特性、接著特性及電特性評價。
異向性導電接著劑之製作、LED構裝體之製作、LED構裝體之放熱特性之評價、接著特性之評價及電特性之評價係以如下方式進行。
〔異向性導電接著劑之製作〕
於環氧硬化系接著劑(以環氧樹脂(商品名：CEL2021P，(股)DAICEL化學製)及酸酐(MeHHPA，商品名：MH700，新日本理化(股)製)作為主成分之黏合劑)中調配於交聯聚苯乙烯樹脂粒子表面經Au被覆而成的平均粒徑(D50)5μm之導電性粒子(品名：AUL705，積水化學工業公司製)、與平均粒徑(D50)5μm之焊料粒子(商品名：M707，千住金屬工業公司製)，以製作具有導熱性之異向性導電接著劑。
〔LED構裝體之製作〕
使用異向性導電接著劑將FC構裝用LED晶片(商品名：DA700，CREE公司製，Vf=3.2V(If=350mA))搭載於Au電極基板(陶瓷基板，導體間距=100μmP、鍍Ni/Au=5.0/0.3μm)上。將異向性導電接著劑塗佈於Au電極基板後，將LED晶片進行對準並搭載，以150℃/10秒→230℃-30秒、荷重1000g/chip之條件下進行加熱壓接。
〔放熱性之評價〕
使用過渡熱阻(transient thermal resistance)測定裝置(CAST電子設計公司製)，測定LED構裝體之熱阻值(℃/W)。測定條件係於If=350mA(定電流控制)下進行。
〔接著特性之評價〕
使用晶片剪力強度(die shear strength)測定器(PTR-1100，RHESCA公 司製)來測定LED構裝體之接著強度
〔電特性之評價〕
測定If=350mA時之Vf值以作為初期Vf值。又，於85℃、85%RH環境下使LED構裝體在If=350mA進行點燈500小時，測定If=350mA時之Vf值。又，將其投入至-40℃/30min<>100℃/30min、3000次循環之熱衝擊試驗，測定If=350mA時Vf值。
高溫高濕試驗及熱衝擊試驗之初期評價，將確認有導通中斷之情形(OPEN)設為「×」，除此之外設為「○」。又，高溫高濕試驗後及熱衝擊試驗之評價，將確認有導通中斷之情形(OPEN)設為「×」，較初期Vf值低5%以上之情形(短路)設為「△」，根據初期Vf值之變動未達5%之情形設為「○」。
〔實施例1〕
於前述樹脂組成物中調配導電性粒子8體積%及焊料粒子2體積%，以製成具有導熱性之異向性導電接著劑。使用該異向性導電接著劑所製成之LED構裝體的熱阻測定結果為21℃/W、晶片剪力強度為26N/chip。又，電特性之高溫高濕試驗之評價結果，在初期為○，在試驗後為○，電特性之熱衝擊試驗之評價結果，在初期為○，在試驗後為○。
〔實施例2〕
於前述樹脂組成物中調配導電性粒子5體積%及焊料粒子5體積%，以製成具有導熱性之異向性導電接著劑。使用該異向性導電接著劑所製成之LED構裝體的熱阻測定結果為13.2℃/W、晶片剪力強度為37N/chip。又，電特性之高溫高濕試驗之評價結果，在初期為○，在試驗後為○，電特性之熱衝擊試驗之評價結果，在初期為○，在試驗後為○。
〔實施例3〕
於前述樹脂組成物中調配導電性粒子2體積%及焊料粒子8體積%，以 製成具有導熱性之異向性導電接著劑。使用該異向性導電接著劑所製成之LED構裝體的熱阻測定結果為12.2℃/W、晶片剪力強度為45N/chip。又，電特性之高溫高濕試驗之評價結果，在初期為○，在試驗後為○，電特性之熱衝擊試驗之評價結果，在初期為○，在試驗後為○。
〔實施例4〕
於前述樹脂組成物中調配導電性粒子2體積%及焊料粒子20體積%，以製成具有導熱性之異向性導電接著劑。使用該異向性導電接著劑所製成之LED構裝體的熱阻測定結果為10.4℃/W、晶片剪力強度為52N/chip。又，電特性之高溫高濕試驗之評價結果，在初期為○，在試驗後為○，電特性之熱衝擊試驗之評價結果，在初期為○，在試驗後為○。
〔實施例5〕
於前述樹脂組成物中調配導電性粒子1體積%及焊料粒子30體積%，以製成具有導熱性之異向性導電接著劑。使用該異向性導電接著劑所製成之LED構裝體的熱阻測定結果為10.0℃/W、晶片剪力強度為54N/chip。又，電特性之高溫高濕試驗之評價結果，在初期為○，在試驗後為○，電特性之熱衝擊試驗之評價結果，在初期為○，在試驗後為○。
〔實施例6〕
於前述樹脂組成物中調配導電性粒子30體積%及焊料粒子1體積%，以製成具有導熱性之異向性導電接著劑。使用該異向性導電接著劑所製成之LED構裝體的熱阻測定結果為31.9℃/W、晶片剪力強度為21N/chip。又，電特性之高溫高濕試驗之評價結果，在初期為○，在試驗後為○，電特性之熱衝擊試驗之評價結果，在初期為○，在試驗後為○。
〔比較例1〕
於上述之樹脂組成物中未調配導電性粒子而調配焊料粒子10體積%以製成具有導熱性之異向性導電接著劑。使用該異向性導電接著劑所製成之 LED構裝體的熱阻測定結果為11.8℃/W、晶片剪力強度為48N/chip。又，電特性之高溫高濕試驗之評價結果，在初期為○，在試驗後為○，電特性之熱衝擊試驗之評價結果，在初期為○，在試驗後為×。
〔比較例2〕
於上述之樹脂組成物中調配導電性粒子5體積%並且未調配焊料粒子，以製成具有導熱性之異向性導電接著劑。使用該異向性導電接著劑所製成之LED構裝體的熱阻測定結果為40.0℃/W、晶片剪力強度為15N/chip。
又，電特性之高溫高濕試驗之評價結果，在初期為○，在試驗後為○，電特性之熱衝擊試驗之評價結果，在初期為○，在試驗後為○。
〔比較例3〕
於上述之樹脂組成物中未調配導電性粒子而調配焊料粒子40體積%，以製成具有導熱性之異向性導電接著劑。使用該異向性導電接著劑所製成之LED構裝體的晶片剪力強度為55N/chip。又，電特性之高溫高濕試驗之評價結果，在初期為△，電特性之熱衝擊試驗之評價結果，在初期為△。
〔比較例4〕
於上述之樹脂組成物中調配導電性粒子40體積%並且未調配焊料粒子，以製成具有導熱性之異向性導電接著劑。使用該異向性導電接著劑所製成之LED構裝體的晶片剪力強度為15N/chip。又，電特性之高溫高濕試驗之評價結果，在初期為△，電特性之熱衝擊試驗之評價結果，在初期為△。
表1表示實施例1~6、並且表2表示比較例1~4之評價結果。又，將焊料粒子之調配量對熱阻值表示於圖5。此圖5係將實施例1~6、比較例1、2之焊料粒子之調配量對熱阻值作成圖表者。
根據實施例1可知，使用有添加導電性粒子8體積%、焊料粒子2體積%於黏合劑樹脂之ACP而成的LED構裝體，其熱阻值為21.0(℃/W)，可使熱阻值更低於未添加焊料粒子之比較例2，並且LED封裝之放熱特性會提高。又，晶片剪力強度為26N/chip，亦高於比較例2。進而， 於85℃85%RH環境下之點燈保存試驗中，在試驗500小時後電連接可靠性為良好。又，於經過熱衝擊試驗3000循環後亦電連接可靠性為良好。
根據實施例2可知，使用有添加導電性粒子5體積%、焊料粒子5體積%於黏合劑樹脂之ACP而成的LED構裝體，其熱阻值為13.2(℃/W)，可使熱阻值亦低於未添加焊料粒子之比較例2，並且LED封裝之放熱特性會提高。又，晶片剪力強度為37N/chip，亦高於比較例2。進而，於85℃85%RH環境下之點燈保存試驗中，在試驗500小時後電連接可靠性為良好。又，於經過熱衝擊試驗3000循環後亦電連接可靠性為良好。
根據實施例3可知，使用有添加導電性粒子2體積%、焊料粒子8體積%於黏合劑樹脂之ACP而成的LED構裝體，其熱阻值為12.2(℃/W)，可使熱阻值更低於未添加焊料粒子之比較例2，並且LED封裝之放熱特性會提高。又，晶片剪力強度為45N/chip，亦高於比較例2。進而，於85℃85%RH環境下之點燈保存試驗中，在試驗500小時後電連接可靠性為良好。又，於經過熱衝擊試驗3000循環後亦電連接可靠性為良好。
根據實施例4可知，使用有添加導電性粒子2體積%、焊料粒子20體積%於黏合劑樹脂之ACP而成的LED構裝體，其熱阻值為10.4(℃/W)，可使熱阻值亦低於未添加焊料粒子之比較例2，並且LED封裝之放熱特性會提高。又，晶片剪力強度為52N/chip，亦高於比較例2。進而，於85℃85%RH環境下之點燈保存試驗中，在試驗500小時後電連接可靠性為良好。又，於經過熱衝擊試驗3000循環後亦電連接可靠性為良好。
根據實施例5可知，使用有添加導電性粒子1體積%、焊料粒子30體積%於黏合劑樹脂之ACP而成的LED構裝體，其熱阻值為10.0(℃/W)，可使熱阻值亦低於未添加焊料粒子之比較例2，並且LED封裝之放熱特性會提高。又，晶片剪力強度為54N/chip，亦高於比較例2。進而，於85℃85%RH環境下之點燈保存試驗中，在試驗500小時後電連接可靠性 為良好。又，於經過熱衝擊試驗3000循環後亦電連接可靠性為良好。
根據實施例6可知，使用有添加導電性粒子30體積%、焊料粒子1體積%於黏合劑樹脂之ACP而成的LED構裝體，其熱阻值為31.9(℃/W)，可使熱阻值亦低於未添加焊料粒子之比較例2，並且LED封裝之放熱特性會提高。又，晶片剪力強度為21N/chip，亦高於比較例2。進而，於85℃85%RH環境下之點燈保存試驗中，在試驗500小時後電連接可靠性為良好。又，於經過熱衝擊試驗3000循環後亦電連接可靠性為良好。
根據比較例1可知，使用有未添加導電性粒子而添加焊料粒子10體積%於黏合劑樹脂之ACP而成的LED構裝樣品，其熱阻值為11.8(℃/W)，可使熱阻值亦低於未添加焊料粒子之比較例2，並且LED封裝之放熱特性會提高。又，晶片剪力強度為48N/chip而亦高於比較例2。進而，於85℃85%RH環境下之點燈保存試驗中，在試驗500小時後電連接可靠性亦為良好。但是，於經過熱衝擊試驗3000循環後於焊接部分裂縫會進入，OPEN會產生而無法獲得良好之電連接可靠性。
根據比較例2可知，使用有添加導電性粒子8體積%而未添加焊料粒子於黏合劑樹脂之ACP而成的LED構裝樣品，於85℃85%RH環境下之點燈保存試驗中，在試驗500小時後電連接可靠性為良好。又，於經過熱衝擊試驗3000循環後亦電連接可靠性為良好。但是，晶片剪力強度較低為15N/chip。又，熱阻值為40(℃/W)而無法獲得良好之放熱性。
根據比較例3可知，使用有未添加導電性粒子而添加焊料粒子40體積%於黏合劑樹脂之ACP而成的LED構裝樣品，其晶片剪力強度為55N/chip，但焊料粒子之添加量過剩，故而喪失異向性。因此，於初期電性測性中短路會產生。
如比較例4可知，使用有添加導電性粒子40體積%而未添加焊料粒子於黏合劑樹脂之ACP而成的LED構裝樣品，其晶片剪力強度較 低為15N/chip。又，導電性粒子脂添加量過剩，故而喪失異向性。因此，於初期電性測性中短路會產生。
如上所述，藉由於異向性導電接著劑中併用焊料粒子與導電性粒子，而可於LED封裝中賦予高放熱性，並且可獲得具有高連接可靠性之異向性導電接著劑。

Claims (4)

  1. 一種異向性導電接著劑，係於樹脂粒子表面形成有導電性金屬層之導電性粒子與焊料粒子分散於接著劑成分而成；其中，上述焊料粒子之調配量為20~30體積%，並且焊料粒子之調配量多於導電性粒子之調配量。
  2. 如申請專利範圍第1項之異向性導電接著劑，其中，上述焊料粒子之平均粒徑為上述導電性粒子之平均粒徑的25~400%。
  3. 一種連接構造體，係第1電子零件之端子及第2電子零件之端子經由於樹脂粒子表面形成有導電性金屬層之導電性粒子而電性連接而成，並且上述第1電子零件之端子及上述第2電子零件之端子之間係焊接而成；焊料粒子之調配量為20~30體積%，並且焊料粒子之調配量多於導電性粒子之調配量。
  4. 如申請專利範圍第3項之連接構造體，其中，第1電子零件為LED元件，第2電子零件為基板。
TW102133614A 2012-09-24 2013-09-17 Anisotropic conductive adhesive TWI626293B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012210224A JP2014065766A (ja) 2012-09-24 2012-09-24 異方性導電接着剤

Publications (2)

Publication Number Publication Date
TW201412933A TW201412933A (zh) 2014-04-01
TWI626293B true TWI626293B (zh) 2018-06-11

Family

ID=50341403

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102133614A TWI626293B (zh) 2012-09-24 2013-09-17 Anisotropic conductive adhesive

Country Status (8)

Country Link
US (1) US9676066B2 (zh)
EP (1) EP2899245B1 (zh)
JP (1) JP2014065766A (zh)
KR (1) KR102159992B1 (zh)
CN (1) CN104662118B (zh)
HK (1) HK1209450A1 (zh)
TW (1) TWI626293B (zh)
WO (1) WO2014046093A1 (zh)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015056754A1 (ja) * 2013-10-17 2015-04-23 デクセリアルズ株式会社 異方性導電接着剤及び接続構造体
JP6450923B2 (ja) * 2013-12-20 2019-01-16 パナソニックＩｐマネジメント株式会社 電子部品実装システムおよび電子部品実装方法ならびに電子部品実装装置
JP6432416B2 (ja) * 2014-04-14 2018-12-05 日亜化学工業株式会社 半導体装置
EP3147340A4 (en) * 2014-05-23 2018-01-03 Dexerials Corporation Adhesive agent and connection structure
JP6419457B2 (ja) * 2014-05-23 2018-11-07 デクセリアルズ株式会社 接着剤及び接続構造体
JP6430148B2 (ja) * 2014-05-23 2018-11-28 デクセリアルズ株式会社 接着剤及び接続構造体
CN107006131A (zh) * 2014-07-28 2017-08-01 通用汽车环球科技运作有限责任公司 用于增强的粘合剂结合的系统和方法
JP6763199B2 (ja) * 2015-06-02 2020-09-30 デクセリアルズ株式会社 接着剤組成物
JP6519407B2 (ja) * 2015-08-26 2019-05-29 日亜化学工業株式会社 発光装置及び発光装置の製造方法
JP6710120B2 (ja) * 2015-09-30 2020-06-17 太陽インキ製造株式会社 導電性接着剤、電子部品および電子部品の製造方法
CN105336275A (zh) * 2015-10-28 2016-02-17 江苏新广联半导体有限公司 高密rgb倒装led显示屏封装结构及制造方法
CN106132086A (zh) * 2016-07-08 2016-11-16 广东小天才科技有限公司 一种电路板结构及电子元件焊接方法
CN105921909A (zh) * 2016-07-18 2016-09-07 浙江亚通焊材有限公司 一种用于制备高温粘带纤料的粘结剂及高温粘带纤料
JP2018088498A (ja) * 2016-11-29 2018-06-07 デクセリアルズ株式会社 異方性導電接着剤
KR102555383B1 (ko) * 2016-12-07 2023-07-12 엘지디스플레이 주식회사 유기발광소자를 이용한 조명장치 및 그 제조방법
TWI761477B (zh) * 2017-03-30 2022-04-21 日商太陽油墨製造股份有限公司 導電性接著劑、硬化物、電子零件及電子零件之製造方法
TWI736695B (zh) * 2017-10-24 2021-08-21 啟耀光電股份有限公司 電子裝置與其製造方法
CN109728022B (zh) * 2017-10-31 2023-06-20 英属开曼群岛商錼创科技股份有限公司 微型发光二极管显示面板及其制造方法
TWI650854B (zh) * 2017-10-31 2019-02-11 英屬開曼群島商錼創科技股份有限公司 微型發光二極體顯示面板及其製造方法
KR101985499B1 (ko) * 2017-12-28 2019-06-03 삼화콘덴서공업 주식회사 과전류 보호 기능을 가지는 금속 산화물 바리스터
JP7160302B2 (ja) * 2018-01-31 2022-10-25 三国電子有限会社 接続構造体および接続構造体の作製方法
JP7185252B2 (ja) 2018-01-31 2022-12-07 三国電子有限会社 接続構造体の作製方法
JP7046351B2 (ja) 2018-01-31 2022-04-04 三国電子有限会社 接続構造体の作製方法
TWI816491B (zh) * 2018-02-14 2023-09-21 晶元光電股份有限公司 發光裝置、其製造方法及顯示模組
KR20190098709A (ko) 2018-02-14 2019-08-22 에피스타 코포레이션 발광 장치, 그 제조 방법 및 디스플레이 모듈
CN110880544B (zh) * 2018-09-06 2021-09-03 深圳市斯迈得半导体有限公司 一种用于玻璃基板的芯片及其制作方法
CN110635017B (zh) * 2019-08-09 2021-07-09 惠州市志金电子科技有限公司 一种miniled背光基板封装方法
TWI819073B (zh) 2019-08-22 2023-10-21 晶元光電股份有限公司 發光裝置、其製造方法及顯示模組
KR102270303B1 (ko) * 2019-08-23 2021-06-30 삼성전기주식회사 적층형 커패시터 및 그 실장 기판
CN111048499B (zh) * 2019-12-16 2022-05-13 业成科技（成都）有限公司 微发光二极管显示面板及其制备方法
US11901497B2 (en) * 2019-12-24 2024-02-13 Seoul Viosys Co., Ltd. Method of repairing light emitting device, apparatus for repairing light emitting device, and display panel having repaired light emitting device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06187834A (ja) * 1992-12-18 1994-07-08 Sumitomo Bakelite Co Ltd 異方導電フィルム

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60178690A (ja) 1984-02-24 1985-09-12 ソニ−ケミカル株式会社 配線基板
JPH0773067B2 (ja) 1987-08-31 1995-08-02 日立化成工業株式会社 回路の接続部材
US5001542A (en) * 1988-12-05 1991-03-19 Hitachi Chemical Company Composition for circuit connection, method for connection using the same, and connected structure of semiconductor chips
JPH03129607A (ja) * 1989-10-14 1991-06-03 Sony Chem Corp 異方性導電膜
JPH04180029A (ja) * 1990-11-15 1992-06-26 Seiko Epson Corp 回路の接続構造体
JPH08102218A (ja) * 1994-09-30 1996-04-16 Nec Corp 異方性導電フィルム
JP3417110B2 (ja) 1994-12-30 2003-06-16 カシオ計算機株式会社 電子部品の接続方法
JPH114064A (ja) 1997-06-12 1999-01-06 Nec Corp 異方性導電樹脂及びこれを用いた電子部品の実装構造
KR100539060B1 (ko) * 1997-10-28 2007-04-25 소니 케미카루 가부시키가이샤 이방도전성접착제및접착용막
JPH11176879A (ja) 1997-12-12 1999-07-02 Citizen Watch Co Ltd 半導体装置の実装方法およびこれに用いる異方性導電接着剤
JP3002965B2 (ja) * 1997-12-29 2000-01-24 株式会社三井ハイテック 電子部品の面実装用接続部材
JP3119230B2 (ja) * 1998-03-03 2000-12-18 日本電気株式会社 樹脂フィルムおよびこれを用いた電子部品の接続方法
JP2002299378A (ja) * 2001-03-30 2002-10-11 Lintec Corp 導電体付接着シート、半導体装置製造方法および半導体装置
JP2006108523A (ja) * 2004-10-08 2006-04-20 Hitachi Chem Co Ltd 異方性導電フィルムを用いた電気部品の接続方法
JP4397947B2 (ja) * 2005-03-28 2010-01-13 パナソニック株式会社 フリップチップ実装体とフリップチップ実装方法及びフリップチップ実装装置
JP4432949B2 (ja) 2006-09-15 2010-03-17 パナソニック株式会社 電気部品の接続方法
JP5499448B2 (ja) * 2008-07-16 2014-05-21 デクセリアルズ株式会社 異方性導電接着剤
US10141084B2 (en) * 2010-10-08 2018-11-27 Cheil Industries, Inc. Electronic device
JP2013118181A (ja) * 2011-11-02 2013-06-13 Sekisui Chem Co Ltd 異方性導電材料及び接続構造体
JP5596767B2 (ja) * 2011-11-02 2014-09-24 積水化学工業株式会社 異方性導電材料及び接続構造体

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06187834A (ja) * 1992-12-18 1994-07-08 Sumitomo Bakelite Co Ltd 異方導電フィルム

Also Published As

Publication number Publication date
WO2014046093A1 (ja) 2014-03-27
US9676066B2 (en) 2017-06-13
JP2014065766A (ja) 2014-04-17
EP2899245B1 (en) 2017-11-08
CN104662118B (zh) 2017-08-18
CN104662118A (zh) 2015-05-27
HK1209450A1 (zh) 2016-04-01
KR20150060757A (ko) 2015-06-03
EP2899245A1 (en) 2015-07-29
EP2899245A4 (en) 2016-06-01
KR102159992B1 (ko) 2020-09-25
US20150209914A1 (en) 2015-07-30
TW201412933A (zh) 2014-04-01

Similar Documents

Publication Publication Date Title
TWI626293B (zh) Anisotropic conductive adhesive
TWI649765B (zh) Anisotropic conductive adhesive
JP6066643B2 (ja) 異方性導電接着剤
TWI574594B (zh) A method of manufacturing a connecting structure and an anisotropic conductive adhesive
WO2015046326A1 (ja) 発光装置、異方性導電接着剤、発光装置製造方法
WO2015056754A1 (ja) 異方性導電接着剤及び接続構造体
TW201447922A (zh) 光反射性導電粒子、異向性導電接著劑及發光裝置
TWI669721B (zh) Anisotropic conductive adhesive
JP2014065765A (ja) 異方性導電接着剤