TWI623590B - 有機薄膜電晶體 - Google Patents

有機薄膜電晶體 Download PDF

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Publication number
TWI623590B
TWI623590B TW104142887A TW104142887A TWI623590B TW I623590 B TWI623590 B TW I623590B TW 104142887 A TW104142887 A TW 104142887A TW 104142887 A TW104142887 A TW 104142887A TW I623590 B TWI623590 B TW I623590B
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TW
Taiwan
Prior art keywords
formula
compound
organic
group
thin film
Prior art date
Application number
TW104142887A
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English (en)
Chinese (zh)
Other versions
TW201631041A (zh
Inventor
竹谷純一
熊澤和久
岩佐淳司
Original Assignee
日本曹達股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 日本曹達股份有限公司 filed Critical 日本曹達股份有限公司
Publication of TW201631041A publication Critical patent/TW201631041A/zh
Application granted granted Critical
Publication of TWI623590B publication Critical patent/TWI623590B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H10K10/29—Diodes comprising organic-inorganic heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H10K10/476—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure comprising at least one organic layer and at least one inorganic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Polymerisation Methods In General (AREA)
  • Paints Or Removers (AREA)
TW104142887A 2015-01-14 2015-12-21 有機薄膜電晶體 TWI623590B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP2015-005413 2015-01-14
JP2015005413 2015-01-14

Publications (2)

Publication Number Publication Date
TW201631041A TW201631041A (zh) 2016-09-01
TWI623590B true TWI623590B (zh) 2018-05-11

Family

ID=56405616

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104142887A TWI623590B (zh) 2015-01-14 2015-12-21 有機薄膜電晶體

Country Status (5)

Country Link
JP (1) JP6417626B2 (ja)
KR (1) KR101960622B1 (ja)
CN (1) CN107112366B (ja)
TW (1) TWI623590B (ja)
WO (1) WO2016114061A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7249001B2 (ja) * 2018-09-04 2023-03-30 国立大学法人 東京大学 有機半導体素子、歪みセンサ、振動センサ及び有機半導体素子の製造方法
JP7464987B2 (ja) 2018-10-22 2024-04-10 国立大学法人 東京大学 導電性ポリマー材料及びその製造方法、光電変換素子並びに電界効果トランジスタ
CN111640874B (zh) * 2020-05-07 2021-11-19 山东大学 基于n-型有机半导体晶体表面台阶缺陷的修复方法及应用

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008019285A (ja) * 2006-07-10 2008-01-31 Sekisui Chem Co Ltd 金属含有ポリマーの製造方法、金属含有ポリマー、感光性樹脂組成物及び半導体素子
TW201412877A (zh) * 2012-07-10 2014-04-01 Nippon Soda Co 有機無機複合體及其之形成用組合物
TW201447483A (zh) * 2013-04-10 2014-12-16 Dongjin Semichem Co Ltd 負型感光性有機－無機混合式絕緣膜組成物

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2795524B2 (ja) * 1990-06-19 1998-09-10 大八化学工業株式会社 保護膜形成用組成物
JP2004161876A (ja) * 2002-11-13 2004-06-10 Shin Etsu Chem Co Ltd 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置
KR101012950B1 (ko) 2003-10-15 2011-02-08 삼성전자주식회사 유기 절연체 형성용 조성물 및 이를 이용하여 제조된 유기절연체
KR101001441B1 (ko) 2004-08-17 2010-12-14 삼성전자주식회사 유무기 금속 하이브리드 물질 및 이를 포함하는 유기절연체 조성물
JP2008140786A (ja) * 2005-03-28 2008-06-19 Pioneer Electronic Corp ゲート絶縁膜、有機トランジスタ、有機ｅｌ表示装置の製造方法、ディスプレイ
KR20100126407A (ko) * 2008-03-18 2010-12-01 도레이 카부시키가이샤 게이트 절연 재료, 게이트 절연막 및 유기 전계 효과형 트랜지스터
JP2010165930A (ja) * 2009-01-16 2010-07-29 Idemitsu Kosan Co Ltd 有機薄膜トランジスタ、その製造方法及びそれを備える装置
JP2012109542A (ja) * 2010-10-18 2012-06-07 Daikin Ind Ltd 塗布型絶縁膜形成用含フッ素組成物、絶縁膜、及び薄膜トランジスタ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008019285A (ja) * 2006-07-10 2008-01-31 Sekisui Chem Co Ltd 金属含有ポリマーの製造方法、金属含有ポリマー、感光性樹脂組成物及び半導体素子
TW201412877A (zh) * 2012-07-10 2014-04-01 Nippon Soda Co 有機無機複合體及其之形成用組合物
TW201447483A (zh) * 2013-04-10 2014-12-16 Dongjin Semichem Co Ltd 負型感光性有機－無機混合式絕緣膜組成物

Also Published As

Publication number Publication date
TW201631041A (zh) 2016-09-01
JP6417626B2 (ja) 2018-11-07
KR101960622B1 (ko) 2019-03-20
CN107112366A (zh) 2017-08-29
KR20170093939A (ko) 2017-08-16
JPWO2016114061A1 (ja) 2017-09-14
CN107112366B (zh) 2020-07-10
WO2016114061A1 (ja) 2016-07-21

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