TWI618981B - 光阻劑及其使用方法 - Google Patents

光阻劑及其使用方法 Download PDF

Info

Publication number
TWI618981B
TWI618981B TW099143924A TW99143924A TWI618981B TW I618981 B TWI618981 B TW I618981B TW 099143924 A TW099143924 A TW 099143924A TW 99143924 A TW99143924 A TW 99143924A TW I618981 B TWI618981 B TW I618981B
Authority
TW
Taiwan
Prior art keywords
photoresist
component
resin
contain
adhesion
Prior art date
Application number
TW099143924A
Other languages
English (en)
Chinese (zh)
Other versions
TW201140247A (en
Inventor
Gerhard Pohlers
吉哈德 保勒爾斯
Original Assignee
Rohm And Haas Electronic Materials Llc
羅門哈斯電子材料有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm And Haas Electronic Materials Llc, 羅門哈斯電子材料有限公司 filed Critical Rohm And Haas Electronic Materials Llc
Publication of TW201140247A publication Critical patent/TW201140247A/zh
Application granted granted Critical
Publication of TWI618981B publication Critical patent/TWI618981B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides
    • G03F7/0085—Azides characterised by the non-macromolecular additives

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW099143924A 2009-12-15 2010-12-15 光阻劑及其使用方法 TWI618981B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28674409P 2009-12-15 2009-12-15
US61/286,744 2009-12-15

Publications (2)

Publication Number Publication Date
TW201140247A TW201140247A (en) 2011-11-16
TWI618981B true TWI618981B (zh) 2018-03-21

Family

ID=43797660

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099143924A TWI618981B (zh) 2009-12-15 2010-12-15 光阻劑及其使用方法

Country Status (6)

Country Link
US (1) US9665001B2 (OSRAM)
EP (1) EP2336829B1 (OSRAM)
JP (6) JP2011186432A (OSRAM)
KR (1) KR101846835B1 (OSRAM)
CN (1) CN102194673B (OSRAM)
TW (1) TWI618981B (OSRAM)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101384457B1 (ko) * 2011-08-04 2014-04-14 주식회사 엘지화학 실란계 화합물 및 이를 포함하는 감광성 수지 조성물
KR101505720B1 (ko) 2012-03-30 2015-03-25 주식회사 엘지화학 실록산계 화합물, 이를 포함하는 감광성 조성물 및 감광재
WO2013147411A1 (ko) * 2012-03-30 2013-10-03 주식회사 엘지화학 실록산계 화합물, 이를 포함하는 감광성 조성물 및 감광재
JP6065789B2 (ja) * 2012-09-27 2017-01-25 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
JP2014182154A (ja) * 2013-03-15 2014-09-29 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物、該組成物を用いたレジスト膜、パターン形成方法、電子デバイスの製造方法及び電子デバイス
KR102195700B1 (ko) 2013-12-04 2020-12-29 삼성디스플레이 주식회사 화학증폭형 레지스트를 이용한 패턴 형성방법
JPWO2016017346A1 (ja) * 2014-08-01 2017-04-27 富士フイルム株式会社 パターン形成方法、及び、これを用いた電子デバイスの製造方法
JP6843515B2 (ja) * 2015-03-31 2021-03-17 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
WO2021079987A1 (ja) 2019-10-25 2021-04-29 味の素株式会社 筋質向上剤
KR20230170166A (ko) * 2022-06-09 2023-12-19 삼성디스플레이 주식회사 표시 장치와 이의 제조 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070099429A1 (en) * 2005-10-28 2007-05-03 Stefan Brandl Post exposure resist bake
WO2007069798A1 (en) * 2005-12-16 2007-06-21 Samyangems Co., Ltd. Positive photoresist composition
TW200804988A (en) * 2006-03-10 2008-01-16 Rohm & Haas Elect Mat Compositions and processes for photolithography
US20090197067A1 (en) * 2008-02-04 2009-08-06 Fujifilm Electronic Materials U.S.A., Inc. Novel Positive Photosensitive Resin Compositions

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4968581A (en) 1986-02-24 1990-11-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers
US4810613A (en) 1987-05-22 1989-03-07 Hoechst Celanese Corporation Blocked monomer and polymers therefrom for use as photoresists
DE3721741A1 (de) 1987-07-01 1989-01-12 Basf Ag Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien
EP0366590B2 (en) 1988-10-28 2001-03-21 International Business Machines Corporation Highly sensitive positive photoresist compositions
US5186383A (en) 1991-10-02 1993-02-16 Motorola, Inc. Method for forming solder bump interconnections to a solder-plated circuit trace
DE69322946T2 (de) 1992-11-03 1999-08-12 International Business Machines Corp., Armonk, N.Y. Photolackzusammensetzung
US5902472A (en) 1996-01-30 1999-05-11 Naganoken And Shinko Electric Industries Co., Ltd. Aqueous solution for forming metal complexes, tin-silver alloy plating bath, and process for producing plated object using the plating bath
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US5861231A (en) 1996-06-11 1999-01-19 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising copolymer resin binder component
US6099713A (en) 1996-11-25 2000-08-08 C. Uyemura & Co., Ltd. Tin-silver alloy electroplating bath and tin-silver alloy electroplating process
KR100219806B1 (ko) 1997-05-27 1999-09-01 윤종용 반도체장치의 플립 칩 실장형 솔더 범프의 제조방법, 이에 따라 제조되는 솔더범프 및 그 분석방법
US5990564A (en) 1997-05-30 1999-11-23 Lucent Technologies Inc. Flip chip packaging of memory chips
US6057083A (en) 1997-11-04 2000-05-02 Shipley Company, L.L.C. Polymers and photoresist compositions
JP4030691B2 (ja) * 1998-09-08 2008-01-09 東京エレクトロン株式会社 ガス処理方法及びその装置
US6124217A (en) 1998-11-25 2000-09-26 Advanced Micro Devices, Inc. In-situ SiON deposition/bake/TEOS deposition process for reduction of defects in interlevel dielectric for integrated circuit interconnects
US6245682B1 (en) 1999-03-11 2001-06-12 Taiwan Semiconductor Manufacturing Company Removal of SiON ARC film after poly photo and etch
US6153504A (en) 1999-08-16 2000-11-28 Advanced Micro Devices, Inc. Method of using a silicon oxynitride ARC for final metal layer
JP4328428B2 (ja) * 1999-11-08 2009-09-09 富士フイルム株式会社 ポジ型レジスト組成物
JP2001242616A (ja) * 2000-02-29 2001-09-07 Fujifilm Arch Co Ltd ポジ型感光性樹脂組成物
JP2001281853A (ja) * 2000-04-03 2001-10-10 Fujifilm Arch Co Ltd ポジ型感光性樹脂組成物
JP2001281861A (ja) * 2000-04-03 2001-10-10 Fujifilm Arch Co Ltd ポジ型感光性樹脂組成物
JP2001291655A (ja) * 2000-04-07 2001-10-19 Tokyo Electron Ltd 疎水化処理の評価方法、レジストパターンの形成方法及びレジストパターン形成システム
US6638847B1 (en) 2000-04-19 2003-10-28 Advanced Interconnect Technology Ltd. Method of forming lead-free bump interconnections
JP2002296780A (ja) * 2001-03-30 2002-10-09 Nippon Zeon Co Ltd 感光性樹脂組成物
US20030138731A1 (en) * 2001-12-21 2003-07-24 Treliant Fang Photoresist formulation for high aspect ratio plating
JP4100165B2 (ja) * 2002-01-28 2008-06-11 Ｊｓｒ株式会社 感光性誘電体形成用組成物、誘電体および電子部品
TW200401164A (en) * 2002-03-01 2004-01-16 Shipley Co Llc Photoresist compositions
US6733949B2 (en) * 2002-04-11 2004-05-11 Clariant Finance (Bvi) Limited Novolak resin mixtures and photosensitive compositions comprising the same
US6866986B2 (en) 2002-07-10 2005-03-15 Cypress Semiconductor Corporation Method of 193 NM photoresist stabilization by the use of ion implantation
JP2004277493A (ja) * 2003-03-13 2004-10-07 Asahi Glass Co Ltd 含シリコン樹脂および感光性樹脂組成物
JP2005064344A (ja) * 2003-08-18 2005-03-10 Seiko Epson Corp 薄膜半導体装置の製造方法、薄膜半導体装置、電気光学装置及び電子機器
JP4718114B2 (ja) * 2003-11-17 2011-07-06 信越化学工業株式会社 珪素含有高分子化合物、レジスト材料及びパターン形成方法
KR100570750B1 (ko) * 2004-01-29 2006-04-12 삼성에스디아이 주식회사 플라즈마 디스플레이 패널용 감광성 도전 조성물
JP4533756B2 (ja) 2005-01-07 2010-09-01 富士フイルム株式会社 イオン注入工程用ポジ型レジスト組成物及びそれを用いたイオン注入方法
US20060257785A1 (en) * 2005-05-13 2006-11-16 Johnson Donald W Method of forming a photoresist element
JP4695941B2 (ja) * 2005-08-19 2011-06-08 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2007183595A (ja) * 2005-12-06 2007-07-19 Toray Ind Inc 感光性ペースト、パターンの形成方法および平面ディスプレイ用パネルの製造方法。
US7951524B2 (en) * 2006-04-28 2011-05-31 International Business Machines Corporation Self-topcoating photoresist for photolithography
JP2008052102A (ja) * 2006-08-25 2008-03-06 Jsr Corp 液浸露光用感放射線性樹脂組成物およびレジストパターン形成方法
JP4798027B2 (ja) * 2007-01-18 2011-10-19 Ｊｓｒ株式会社 イオンインプランテーション用感放射線性樹脂組成物、及びイオンインプランテーション用パターン形成方法
JP5260094B2 (ja) 2007-03-12 2013-08-14 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フェノール系ポリマー及びこれを含有するフォトレジスト
TWI431426B (zh) * 2007-03-27 2014-03-21 Fujifilm Corp 正型感光性樹脂組成物及使用它之硬化薄膜形成法
KR101385946B1 (ko) * 2007-04-02 2014-04-16 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 포토레지스트 패턴의형성 방법
JP4637209B2 (ja) * 2007-06-05 2011-02-23 富士フイルム株式会社 ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法
CN101526737B (zh) * 2007-11-05 2014-02-26 罗门哈斯电子材料有限公司 浸渍平版印刷用组合物和浸渍平版印刷方法
CN102016718B (zh) * 2008-05-07 2013-10-16 住友电木株式会社 正型感光性树脂组合物、固化膜、保护膜和绝缘膜以及使用它们的半导体装置和显示装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070099429A1 (en) * 2005-10-28 2007-05-03 Stefan Brandl Post exposure resist bake
WO2007069798A1 (en) * 2005-12-16 2007-06-21 Samyangems Co., Ltd. Positive photoresist composition
TW200804988A (en) * 2006-03-10 2008-01-16 Rohm & Haas Elect Mat Compositions and processes for photolithography
US20090197067A1 (en) * 2008-02-04 2009-08-06 Fujifilm Electronic Materials U.S.A., Inc. Novel Positive Photosensitive Resin Compositions

Also Published As

Publication number Publication date
JP2021184107A (ja) 2021-12-02
JP2019117401A (ja) 2019-07-18
JP2015129961A (ja) 2015-07-16
KR101846835B1 (ko) 2018-04-09
JP6641092B2 (ja) 2020-02-05
JP2011186432A (ja) 2011-09-22
KR20110068937A (ko) 2011-06-22
US20110254133A1 (en) 2011-10-20
JP6971273B2 (ja) 2021-11-24
EP2336829A1 (en) 2011-06-22
JP2019194725A (ja) 2019-11-07
EP2336829B1 (en) 2019-01-23
US9665001B2 (en) 2017-05-30
TW201140247A (en) 2011-11-16
CN102194673A (zh) 2011-09-21
JP2017201420A (ja) 2017-11-09
CN102194673B (zh) 2015-08-05

Similar Documents

Publication Publication Date Title
TWI618981B (zh) 光阻劑及其使用方法
US9502254B2 (en) Photoresists and methods for use thereof
JP6297519B2 (ja) フォトレジストおよびその使用方法
US9508553B2 (en) Photoresists and methods for use thereof

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees