TWI618818B - 含銀薄膜的蝕刻液組合物和使用了其的顯示裝置用陣列基板的製造方法 - Google Patents
含銀薄膜的蝕刻液組合物和使用了其的顯示裝置用陣列基板的製造方法 Download PDFInfo
- Publication number
- TWI618818B TWI618818B TW105104270A TW105104270A TWI618818B TW I618818 B TWI618818 B TW I618818B TW 105104270 A TW105104270 A TW 105104270A TW 105104270 A TW105104270 A TW 105104270A TW I618818 B TWI618818 B TW I618818B
- Authority
- TW
- Taiwan
- Prior art keywords
- silver
- film
- etching solution
- solution composition
- transparent conductive
- Prior art date
Links
- 238000005530 etching Methods 0.000 title claims abstract description 122
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 108
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 101
- 239000004332 silver Substances 0.000 title claims abstract description 101
- 239000000203 mixture Substances 0.000 title claims abstract description 61
- 239000000758 substrate Substances 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 37
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 30
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 26
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims abstract description 13
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 13
- 229910002651 NO3 Inorganic materials 0.000 claims abstract description 12
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000008367 deionised water Substances 0.000 claims abstract description 12
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910019142 PO4 Inorganic materials 0.000 claims abstract description 11
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 11
- 239000010452 phosphate Substances 0.000 claims abstract description 11
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims abstract description 11
- 239000010408 film Substances 0.000 claims description 126
- 239000010409 thin film Substances 0.000 claims description 32
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 6
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 5
- 239000010955 niobium Substances 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 4
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 claims description 3
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims description 2
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 claims description 2
- 239000005695 Ammonium acetate Substances 0.000 claims description 2
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 claims description 2
- 235000019257 ammonium acetate Nutrition 0.000 claims description 2
- 229940043376 ammonium acetate Drugs 0.000 claims description 2
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 claims description 2
- 229910000388 diammonium phosphate Inorganic materials 0.000 claims description 2
- 235000019838 diammonium phosphate Nutrition 0.000 claims description 2
- ZPWVASYFFYYZEW-UHFFFAOYSA-L dipotassium hydrogen phosphate Chemical compound [K+].[K+].OP([O-])([O-])=O ZPWVASYFFYYZEW-UHFFFAOYSA-L 0.000 claims description 2
- BNIILDVGGAEEIG-UHFFFAOYSA-L disodium hydrogen phosphate Chemical compound [Na+].[Na+].OP([O-])([O-])=O BNIILDVGGAEEIG-UHFFFAOYSA-L 0.000 claims description 2
- 235000019837 monoammonium phosphate Nutrition 0.000 claims description 2
- 229910000402 monopotassium phosphate Inorganic materials 0.000 claims description 2
- 235000019796 monopotassium phosphate Nutrition 0.000 claims description 2
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 claims description 2
- 235000011056 potassium acetate Nutrition 0.000 claims description 2
- 239000001632 sodium acetate Substances 0.000 claims description 2
- 235000017281 sodium acetate Nutrition 0.000 claims description 2
- AJPJDKMHJJGVTQ-UHFFFAOYSA-M sodium dihydrogen phosphate Chemical compound [Na+].OP(O)([O-])=O AJPJDKMHJJGVTQ-UHFFFAOYSA-M 0.000 claims description 2
- 239000004317 sodium nitrate Substances 0.000 claims description 2
- 235000010344 sodium nitrate Nutrition 0.000 claims description 2
- 239000001488 sodium phosphate Substances 0.000 claims description 2
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims description 2
- 229910000406 trisodium phosphate Inorganic materials 0.000 claims description 2
- 235000019801 trisodium phosphate Nutrition 0.000 claims description 2
- 239000004254 Ammonium phosphate Substances 0.000 claims 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 claims 1
- 235000019289 ammonium phosphates Nutrition 0.000 claims 1
- 229910000403 monosodium phosphate Inorganic materials 0.000 claims 1
- 235000019799 monosodium phosphate Nutrition 0.000 claims 1
- 239000004323 potassium nitrate Substances 0.000 claims 1
- 235000010333 potassium nitrate Nutrition 0.000 claims 1
- 229910052702 rhenium Inorganic materials 0.000 claims 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims 1
- 230000008569 process Effects 0.000 description 16
- 238000011156 evaluation Methods 0.000 description 10
- 238000001179 sorption measurement Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 2
- 229910052776 Thorium Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000740 bleeding effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- DTPQZKZONQKKSU-UHFFFAOYSA-N silver azanide silver Chemical compound [NH2-].[Ag].[Ag].[Ag+] DTPQZKZONQKKSU-UHFFFAOYSA-N 0.000 description 2
- 229910001923 silver oxide Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000002042 Silver nanowire Substances 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- ZRIUUUJAJJNDSS-UHFFFAOYSA-N ammonium phosphates Chemical compound [NH4+].[NH4+].[NH4+].[O-]P([O-])([O-])=O ZRIUUUJAJJNDSS-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000002981 blocking agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007602 hot air drying Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- -1 silver ions Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
- ing And Chemical Polishing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ??10-2015-0032426 | 2015-03-09 | ||
| KR1020150032426A KR20160108944A (ko) | 2015-03-09 | 2015-03-09 | 은 함유 박막의 식각액 조성물 및 이를 이용한 표시 장치용 어레이 기판의 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201704537A TW201704537A (zh) | 2017-02-01 |
| TWI618818B true TWI618818B (zh) | 2018-03-21 |
Family
ID=56897656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105104270A TWI618818B (zh) | 2015-03-09 | 2016-02-15 | 含銀薄膜的蝕刻液組合物和使用了其的顯示裝置用陣列基板的製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6669522B2 (ko) |
| KR (1) | KR20160108944A (ko) |
| CN (1) | CN105951101A (ko) |
| TW (1) | TWI618818B (ko) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102400311B1 (ko) * | 2015-08-31 | 2022-05-20 | 동우 화인켐 주식회사 | 은 식각액 조성물 및 이를 이용한 표시 기판 |
| KR102546803B1 (ko) * | 2016-05-23 | 2023-06-22 | 동우 화인켐 주식회사 | 은 함유 박막의 식각액 조성물 및 이를 이용한 표시 기판 |
| KR101718460B1 (ko) * | 2016-11-14 | 2017-03-22 | 길기환 | 금 박막 식각액 조성물 |
| KR102680506B1 (ko) * | 2017-02-02 | 2024-07-02 | 동우 화인켐 주식회사 | 은 함유 박막 식각액 조성물 및 이를 이용한 표시장치용 어레이기판의 제조방법 |
| KR101935131B1 (ko) * | 2017-02-02 | 2019-01-03 | 동우 화인켐 주식회사 | 은 함유 박막 식각액 조성물 및 이를 이용한 표시장치용 어레이기판의 제조방법 |
| KR102400258B1 (ko) * | 2017-03-28 | 2022-05-19 | 동우 화인켐 주식회사 | 금속막 식각액 조성물 및 이를 이용한 도전 패턴 형성 방법 |
| KR102457171B1 (ko) * | 2017-03-30 | 2022-10-19 | 동우 화인켐 주식회사 | 금속막 식각액 조성물 및 이를 이용한 도전 패턴 형성 방법 |
| KR102421116B1 (ko) * | 2017-06-22 | 2022-07-15 | 삼성디스플레이 주식회사 | 식각액 조성물 및 식각액 조성물을 이용한 배선 형성 방법 |
| KR102457168B1 (ko) * | 2017-07-26 | 2022-10-19 | 동우 화인켐 주식회사 | 금속막 식각액 조성물 및 이를 이용한 도전 패턴 형성 방법 |
| KR102263693B1 (ko) * | 2017-11-02 | 2021-06-10 | 동우 화인켐 주식회사 | 은 식각액 조성물 및 이를 이용한 식각 방법 및 금속 패턴의 형성 방법 |
| KR102218937B1 (ko) * | 2017-11-16 | 2021-02-23 | 동우 화인켐 주식회사 | 은 식각액 조성물 및 이를 이용한 식각 방법 및 금속 패턴의 형성 방법 |
| KR102368026B1 (ko) * | 2018-02-06 | 2022-02-24 | 동우 화인켐 주식회사 | 금속막 식각액 조성물 및 이를 이용한 도전 패턴 형성 방법 |
| KR102459688B1 (ko) * | 2018-02-13 | 2022-10-27 | 동우 화인켐 주식회사 | 은 박막 식각액 조성물 및 이를 이용한 식각 방법 및 금속 패턴의 형성 방법 |
| KR20190111724A (ko) * | 2018-03-23 | 2019-10-02 | 동우 화인켐 주식회사 | 은 박막 식각액 조성물 및 이를 이용한 식각 방법 및 금속 패턴의 형성 방법 |
| CN110359049B (zh) * | 2018-03-26 | 2021-11-23 | 东友精细化工有限公司 | 含银薄膜蚀刻液组合物、利用其制造的显示装置用阵列基板及其制造方法 |
| CN110359050B (zh) * | 2018-03-26 | 2021-08-10 | 东友精细化工有限公司 | 含银薄膜蚀刻液组合物、用其制造的用于显示装置的阵列基板及其制造方法 |
| KR102223681B1 (ko) * | 2018-05-30 | 2021-03-08 | 삼성디스플레이 주식회사 | 박막 식각액 조성물 및 이를 이용한 금속 패턴 형성 방법 |
| CN108777265A (zh) * | 2018-06-13 | 2018-11-09 | 武汉华星光电半导体显示技术有限公司 | 一种电极及其制备方法和有机电致发光器件 |
| CN110644003B (zh) * | 2018-06-26 | 2022-06-21 | 东友精细化工有限公司 | 银薄膜蚀刻液组合物及利用其的蚀刻方法和金属图案的形成方法 |
| CN110670072B (zh) * | 2018-07-03 | 2023-06-16 | 安集微电子科技（上海）股份有限公司 | 一种银蚀刻液 |
| CN112752867B (zh) | 2018-09-12 | 2024-05-24 | 富士胶片电子材料美国有限公司 | 蚀刻组合物 |
| KR102661845B1 (ko) * | 2018-10-11 | 2024-04-30 | 삼성디스플레이 주식회사 | 식각액 및 이를 이용한 표시 장치의 제조 방법 |
| CN111155092B (zh) * | 2018-11-08 | 2023-03-17 | 东友精细化工有限公司 | 银薄膜蚀刻液组合物、蚀刻方法及金属图案的形成方法 |
| CN109266352B (zh) * | 2018-11-08 | 2020-07-07 | 江阴江化微电子材料股份有限公司 | 一种含银复合膜的蚀刻液组合物及蚀刻方法 |
| JP7233217B2 (ja) | 2018-12-28 | 2023-03-06 | 関東化学株式会社 | 酸化亜鉛および銀を有する積層膜の一括エッチング液組成物 |
| KR102478164B1 (ko) * | 2020-06-05 | 2022-12-14 | 한국항공대학교산학협력단 | 은 함유 막 식각액 조성물, 이를 이용한 금속 패턴 방법, 표시장치용 어레이 기판의 제조 방법 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100347344C (zh) * | 2002-11-26 | 2007-11-07 | 关东化学株式会社 | 以银为主成分的金属薄膜的蚀刻液组合物 |
| TW200813195A (en) * | 2006-09-01 | 2008-03-16 | Taiwan Tft Lcd Ass | Etchant for patterning composite layer and method of fabricating patterned conductive layer of electronic device using the same |
| CN1873054B (zh) * | 2005-05-30 | 2010-04-14 | 株式会社东进世美肯 | 蚀刻组合物 |
| CN101265579B (zh) * | 2007-03-15 | 2012-11-07 | 株式会社东进世美肯 | 薄膜晶体管液晶显示装置的蚀刻液组合物 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100371809C (zh) * | 2001-07-06 | 2008-02-27 | 三星电子株式会社 | 用于线路的蚀刻液、制造线路的方法和包括此方法的制造薄膜晶体管阵列板的方法 |
| JP3974023B2 (ja) * | 2002-06-27 | 2007-09-12 | 富士通株式会社 | 半導体装置の製造方法 |
| KR101337263B1 (ko) * | 2004-08-25 | 2013-12-05 | 동우 화인켐 주식회사 | 인듐 산화막의 식각액 조성물 및 이를 이용한 식각 방법 |
| KR101124569B1 (ko) * | 2005-06-09 | 2012-03-15 | 삼성전자주식회사 | 식각액, 이를 이용하는 배선 형성 방법 및 박막 트랜지스터기판의 제조 방법 |
| KR101299131B1 (ko) * | 2006-05-10 | 2013-08-22 | 주식회사 동진쎄미켐 | 박막트랜지스터 액정표시장치의 식각 조성물 |
| KR101323458B1 (ko) * | 2007-06-15 | 2013-10-29 | 동우 화인켐 주식회사 | 은 식각액 조성물 |
| JP2009007634A (ja) * | 2007-06-28 | 2009-01-15 | Ulvac Seimaku Kk | 銀合金膜のエッチング方法およびエッチング溶液 |
| JP2010165732A (ja) * | 2009-01-13 | 2010-07-29 | Hitachi Displays Ltd | エッチング液及びこれを用いたパターン形成方法並びに液晶表示装置の製造方法 |
| KR101766488B1 (ko) * | 2011-12-15 | 2017-08-09 | 동우 화인켐 주식회사 | 금속 배선 형성을 위한 식각액 조성물 |
| JP6025595B2 (ja) * | 2013-02-15 | 2016-11-16 | 三菱電機株式会社 | 薄膜トランジスタの製造方法 |
-
2015
- 2015-03-09 KR KR1020150032426A patent/KR20160108944A/ko not_active IP Right Cessation
-
2016
- 2016-02-12 JP JP2016024879A patent/JP6669522B2/ja active Active
- 2016-02-15 TW TW105104270A patent/TWI618818B/zh active
- 2016-02-24 CN CN201610102113.1A patent/CN105951101A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100347344C (zh) * | 2002-11-26 | 2007-11-07 | 关东化学株式会社 | 以银为主成分的金属薄膜的蚀刻液组合物 |
| CN1873054B (zh) * | 2005-05-30 | 2010-04-14 | 株式会社东进世美肯 | 蚀刻组合物 |
| TW200813195A (en) * | 2006-09-01 | 2008-03-16 | Taiwan Tft Lcd Ass | Etchant for patterning composite layer and method of fabricating patterned conductive layer of electronic device using the same |
| CN101265579B (zh) * | 2007-03-15 | 2012-11-07 | 株式会社东进世美肯 | 薄膜晶体管液晶显示装置的蚀刻液组合物 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20160108944A (ko) | 2016-09-21 |
| JP2016167581A (ja) | 2016-09-15 |
| TW201704537A (zh) | 2017-02-01 |
| JP6669522B2 (ja) | 2020-03-18 |
| CN105951101A (zh) | 2016-09-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI618818B (zh) | 含銀薄膜的蝕刻液組合物和使用了其的顯示裝置用陣列基板的製造方法 | |
| JP2016167581A5 (ko) | ||
| KR102546803B1 (ko) | 은 함유 박막의 식각액 조성물 및 이를 이용한 표시 기판 | |
| JP2017092439A (ja) | 銀エッチング液組成物およびこれを用いた表示基板 | |
| TWI679308B (zh) | 銀蝕刻液組合物及利用其之顯示基板 | |
| KR102245565B1 (ko) | 은 식각액 조성물 및 이를 이용한 표시 기판 | |
| JP7403966B2 (ja) | 薄膜エッチング液組成物、及びそれを利用した金属パターン形成方法 | |
| TWI636157B (zh) | 銀蝕刻液組合物和使用了其的顯示基板 | |
| TW201812102A (zh) | 用於銀層的蝕刻溶液組合物、使用其製作金屬圖案的方法和製作顯示基板的方法 | |
| KR102263693B1 (ko) | 은 식각액 조성물 및 이를 이용한 식각 방법 및 금속 패턴의 형성 방법 | |
| TWI675939B (zh) | 含銀薄膜用的蝕刻液組合物及利用其的顯示裝置用陣列基板的製造方法 | |
| CN105755472B (zh) | 银蚀刻液组合物和利用它的显示基板 | |
| KR20200054873A (ko) | 은 박막 식각액 조성물 및 이를 이용한 식각 방법 및 금속 패턴의 형성 방법 | |
| KR20190112622A (ko) | 은 함유 박막 식각액 조성물 및 이를 이용하여 제조된 표시장치용 어레이기판 및 이의 제조방법 | |
| KR102531401B1 (ko) | 은 함유 박막의 식각액 조성물 및 이를 이용한 표시 기판 | |
| CN111172541B (zh) | 银薄膜蚀刻液组合物、蚀刻方法及金属图案的形成方法 | |
| CN110359050B (zh) | 含银薄膜蚀刻液组合物、用其制造的用于显示装置的阵列基板及其制造方法 | |
| KR20190111596A (ko) | 은 박막 식각액 조성물 및 이를 이용한 식각 방법 및 금속 패턴의 형성 방법 | |
| CN111155092B (zh) | 银薄膜蚀刻液组合物、蚀刻方法及金属图案的形成方法 | |
| KR20230118059A (ko) | 은 함유 박막 식각액 조성물 및 이를 이용한 표시장치용 어레이기판의 제조방법 | |
| KR20200054871A (ko) | 은 박막 식각액 조성물 및 이를 이용한 식각 방법 및 금속 패턴의 형성 방법 | |
| KR20200054866A (ko) | 은 박막 식각액 조성물 및 이를 이용한 식각 방법 및 금속 패턴의 형성 방법 | |
| KR20200060229A (ko) | 은 박막 식각액 조성물 및 이를 이용한 식각 방법 및 금속 패턴의 형성 방법 | |
| KR20200053400A (ko) | 은 박막 식각액 조성물, 이를 이용한 식각 방법 및 금속 패턴의 형성 방법 | |
| KR20200054813A (ko) | 은 박막 식각액 조성물 및 이를 이용한 식각 방법 및 금속 패턴의 형성 방법 |