TWI618818B - Etching solution composition for silver-containing layer and manufacturing method of an array substrate for display device using the same - Google Patents

Abstract

The present invention relates to an etching solution composition of a silver-containing film containing phosphoric acid, nitric acid, acetic acid, phosphate, nitrate and / or acetate, and deionized water, and a method for manufacturing an array substrate for a display device using the same.

Description

Etching liquid composition containing silver thin film and method for manufacturing array substrate for display device using the same Field of invention

The present invention relates to an etching solution composition containing a silver (Ag) film and a method for manufacturing an array substrate for a display device using the same.

Background of the invention

With the entry into the real information age, the field of displays that process and display a large amount of information has developed rapidly, and a variety of flat panel displays have been developed and attracted attention.

Examples of such a flat panel display device include a liquid crystal display device (Liquid Crystal Display device: LCD), a plasma display device (Plasma Display Panel device: PDP), a field emission display device (Field Emission Display device: FED), Organic light emitting elements (Organic Light Emitting Diodes: OLED) and the like.

In particular, since OLEDs emit light by themselves and can be driven even at low voltages, they have been rapidly applied not only to the small display market such as portable devices, but also to large-screen displays. The current trend is to commercialize large TVs. Along with the enlargement of the display, the wiring and the like are lengthened, and the wiring resistance is increased. Therefore, a method for reducing the resistance and realizing the enlargement and high resolution of the display device is required.

In order to solve problems such as signal delay caused by an increase in resistance, it is necessary to form the wiring with a material having as low a specific resistance as possible. As part of this effort, efforts are being made to include silver (Ag: specific resistance of about 1.59 μΩcm) films, silver alloy films, or silver films or silver alloy films that have lower specific resistance, higher brightness, and electrical conductivity than other metals. Multilayer films are applied to electrodes, wirings, and reflective films of color filters, and efforts to increase the size of flat-panel display devices, as well as high resolution and low power consumption, require etching solutions for such materials.

When a silver (Ag) -containing thin film is vapor-deposited on a substrate, in order to pattern and etch it, when a conventional etching solution is used, problems such as poor etching, residue generation, and prolonged process time may occur. On the contrary, silver (Ag) is excessively etched and unevenly etched, so that the wiring floats or peels, and the side profile of the wiring may be defective. Therefore, it is required to develop a new etching solution capable of solving such a problem.

Summary of invention

The present invention has been made to solve the above-mentioned problems, and an object thereof is to provide a single film of silver (Ag) or a silver alloy, or a multilayer film including the single film and a transparent conductive film, which is excellent in CD bias during etching, There is no damage to the lower data wiring, generation of residue, and uniform display corrosion Etching composition with etching characteristics.

Another object of the present invention is to provide a method for manufacturing an array substrate for a display device such as an OLED, LCD, or the like using the etching solution composition.

In order to achieve the object, the present invention provides an etching solution composition containing a silver (Ag) film, which is characterized in that it contains 40 to 60% by weight of phosphoric acid (A) and nitric acid (B) with respect to the total weight of the composition. 3 ~ 8% by weight; 5 ~ 20% by weight of acetic acid (C); 0.1 ~ 3% by weight of phosphate (D); 0.1 ~ 3% by weight of nitrate (E) and 0.1 ~ 3% by weight of acetate (F) More than one kind of salt; and the balance of deionized water (G).

The present invention also provides a method for manufacturing an array substrate for a display device. The method for manufacturing an array substrate for a display device includes: a) a step of forming a gate wiring on a substrate; and b) a step of forming a gate wiring on the substrate including the gate wiring. A step of a gate insulating layer, c) a step of forming a semiconductor layer on the gate insulating layer, d) a step of forming a source electrode and a drain electrode on the semiconductor layer, and e) forming a layer connected to the drain electrode A step of a pixel electrode or a reflective film, wherein the step e) includes forming silver (Ag) -containing on a substrate The thin film is etched with the silver-containing thin film-containing etching solution composition of the present invention to form a pixel electrode or a reflective film.

Furthermore, this invention provides the wiring etched with the said silver (Ag) containing etching solution composition.

The etching solution composition of the silver (Ag) -containing film of the present invention includes phosphoric acid, nitric acid, acetic acid, phosphate, nitrate, and / or acetate, and deionized water, and can provide a silver (Ag) -containing film when etched. An etchant composition that is excellent in CD bias, has no damage to the lower wiring and generation of etching residues, has uniform etching characteristics, and is easy to control the etching rate.

The present invention can also provide a method for manufacturing an array substrate for a display device using the etchant composition.

FIG. 1 is an SEM photograph for explaining a limit dimensional deviation (CD bias: photoresist width-wiring width, width difference) when etching with an etchant.

FIG. 2 is an SEM photograph in which presence / absence of silver (Ag) residue was measured after etching with an etchant.

FIG. 3 is an SEM photograph in which the presence / absence of silver (Ag) re-adsorption was measured after etching with an etchant.

FIG. 4 is a diagram illustrating a vertical etching rate in the evaluation of the etching rate of the etching solution.

detailed description

The present inventors repeatedly worked hard to provide an etching solution composition having excellent etching characteristics for a silver-containing (Ag) -containing film, no residue and re-adsorption, excellent etching control, and no excessive etching. As a result, it contained phosphoric acid and nitric acid. Acetic acid as an acid, an etching solution composition containing phosphate, nitrate, and / or acetate, etc. have completed the present invention.

The invention relates to an etching solution composition containing a silver (Ag) film, which is characterized in that it contains 40 to 60% by weight of phosphoric acid (A), 3 to 8% by weight of nitric acid (B), and acetic acid with respect to the total weight of the composition. (C) 5 to 20% by weight; phosphate (D) 0.1 to 3% by weight; one or more salts selected from the group consisting of nitrate (E) 0.1 to 3% by weight and acetate (F) 0.1 to 3% by weight ; And the balance of deionized water (G).

The silver (Ag) -containing thin film is a concept including silver (Ag) as a constituent component of the film, and a single film and a multilayer film having a double film or more. Examples of the silver (Ag) -containing thin film include a single film made of silver (Ag) or a silver alloy, or a multilayer film made of the single film and a transparent conductive film, but the invention is not limited thereto.

The transparent conductive film generally refers to a transparent conductive film, such as IZO and a-ITO, which has a transmittance in the visible light region of about 90% or more and a resistivity of 1 × 10 ^-4 Ωcm or less. In order for a transparent conductive film to be transparent, it is generally necessary to conduct a small number of electrons, and to increase the conductivity, it is necessary to conduct a large number of electrons. That is, in the case of a transparent conductive film, two opposite conditions must be satisfied.

In the method of vapor-depositing IZO and ITO, a sputtering method is generally used. Compared with a CVD (Chemical Vapor Deposition) method, it is easier to adjust the deposition conditions. In addition, when manufacturing a large-sized substrate, there is an advantage that it is easy to uniformize the thickness of the thin film and the thin film characteristics. When the sputtering method is used, there are two methods using an oxide target or an alloy target. When an alloy target is used, the deposition speed is fast, the target life is long, and target manufacturing is possible. It has the advantages of ease of use and reuse, but has the disadvantage of showing changes in characteristics that are sensitive to process variables. If an oxide target is used, the stoichiometry of the thin film can be controlled reproducibly. However, compared with an alloy target, it has a slower vapor deposition rate, a physical crack in the target, and an arc in the target. Disadvantages.

In the case where indium-main component oxide is vapor-deposited by a sputtering method, it reacts with O ₂ and has a form of In ₂ O _3. In order to improve the conductivity, Ga, Ge, Si, Ti, Sb, Zr, Sn, and Zn. IZO and ITO in the present invention mean transparent conductive film oxides in which In ₂ O ₃ and ZnO, In ₂ O ₃ and SnO ₂ are mixed at appropriate ratios, respectively.

Hereinafter, each component which comprises the silver (Ag) containing etching solution composition of this invention is demonstrated. However, the present invention is not limited to these components.

(A) phosphoric acid

The phosphoric acid (H ₃ PO ₄ ) contained in the silver (Ag) thin film-containing etching solution composition of the present invention is a component used as a main oxidizing agent. The effect of wet etching is to oxidize a silver-containing thin film such as a film.

The phosphoric acid may contain 40 to 60% by weight, and more preferably 50 to 60% by weight, based on the total weight of the silver (Ag) -containing etching solution composition of the present invention. When the phosphoric acid is contained in an amount of less than 40% by weight, a decrease in the etching rate of silver and a defect caused by the generation of silver residue may be caused. Conversely, when the content exceeds 60% by weight, the etching rate of the transparent conductive film may decrease, and the etching rate of silver may be excessively accelerated. Therefore, when it is applied to a multilayer film of silver or a silver alloy and a transparent conductive film, problems may be induced in subsequent processes due to the generation of tips of the upper and lower transparent conductive films or excessive etching. do not wish.

(B) nitric acid

The nitric acid (HNO ₃ ) contained in the silver (Ag) thin film-containing etching solution composition of the present invention is a component used as an auxiliary oxidizing agent. As an example, transparent conductive film / silver (Ag) / transparent conductive film is used. Such a silver-containing film is oxidized and wet-etched.

The nitric acid (B) may contain 3 to 8% by weight, and more preferably 5 to 7% by weight, based on the total weight of the silver (Ag) -containing etching solution composition of the present invention. When the content of the nitric acid is less than 3% by weight, a decrease in the etching rate of silver (Ag), a silver alloy, or a transparent conductive film occurs, so that the uniformity of the etching in the substrate becomes Defective, so bleeding occurs. When the content of the nitric acid exceeds 8% by weight, the etching speed of the upper and lower transparent conductive films is accelerated. Occurrence of the remaining etching may cause problems in subsequent processes.

(C) Acetic acid

The acetic acid (CH ₃ COOH) contained in the silver (Ag) thin film-containing etching solution composition of the present invention is a component used as an auxiliary oxidizing agent. Such as silver-containing film oxidation and wet etching.

The acetic acid may contain 5 to 20% by weight, and more preferably 5 to 15% by weight, based on the total weight of the silver (Ag) film-containing etching solution composition of the present invention. When the content of the acetic acid is less than 5% by weight, there is a problem that bleeding occurs due to uneven etching rates in the substrate. On the other hand, when the content exceeds 20% by weight, bubbles are generated. When such bubbles exist in the substrate, complete etching may not be performed, which may cause problems in subsequent processes.

(D) phosphate

The phosphate contained in the silver (Ag) -containing thin film etching solution composition of the present invention reduces the limit dimensional deviation (CD Bias) of the thin film during wet etching, and adjusts the etching speed so that the etching is performed uniformly. Specific examples of the phosphate include sodium dihydrogen phosphate (NaH ₂ PO ₄ ), disodium hydrogen phosphate (Na ₂ HPO ₄ ), trisodium phosphate (Na ₃ PO ₄ ), and potassium dihydrogen phosphate (KH ₂ PO ₄ ), dipotassium hydrogen phosphate (K ₂ HPO ₄ ), ammonium dihydrogen phosphate ((NH ₄ ) H ₂ PO ₄ ), diammonium hydrogen phosphate ((NH ₄ ) ₂ HPO ₄ ), and ammonium phosphate ((NH ₄ ) ₃ PO ₄ ) and the like, but are not limited to these, and one or more selected from these can be used.

The phosphate relative to the silver (Ag) -containing film of the present invention The total weight of the etching solution composition may contain 0.1 to 3% by weight, and more preferably 0.5 to 2% by weight. When the content of the phosphate is less than 0.1% by weight, the uniformity of the etching in the substrate may be reduced, and silver residue may be generated. On the other hand, when the content exceeds 3% by weight, the etching rate is lowered, and a desired etching rate cannot be achieved. As a result, process efficiency such as prolonged process time may be reduced.

(E) Nitrate

The nitrate contained in the silver (Ag) thin film-containing etching solution composition of the present invention has the following functions: preventing silver ions (Ag ⁺ ) or colloidal silver re-adsorption at undesired positions, An electrical short circuit (short circuit) occurs due to defective dark spots or unnecessary connection between wirings. Specific examples of the nitrate include potassium nitrate (KNO ₃ ), sodium nitrate (NaNO ₃ ), and ammonium nitrate (NH ₄ NO ₃ ), but they are not limited to these, and those selected from these can be used. 1 or more.

The nitrate may contain 0.1 to 3% by weight, and more preferably 0.5 to 2% by weight based on the total weight of the silver (Ag) film-containing etching solution composition of the present invention. When the content of the nitrate is less than 0.1% by weight, the effect of preventing re-adsorption of silver in the substrate cannot be exerted well. When it exceeds 3% by weight, the etching rate is reduced, and the desired etching rate cannot be achieved. Sometimes, due to the generation of silver residue, problems are caused in subsequent processes.

(F) Acetate

The acetate (F) contained in the silver (Ag) thin film-containing etching solution composition of the present invention plays a role in fine patterning of wiring, pixel electrodes, or reflective films accompanying high-resolution display devices. (in order to A large number of pixels are included in the same area, and the width and size of the wiring become smaller.) The reduction of the etching amount prevents the loss of the wiring. The acetate not only reduces the etching amount of silver or a silver alloy, but also reduces the etching amount of the transparent conductive film, so that a more excellent etching reduction effect can be obtained in a multiple film.

In addition, as the phosphoric acid (A) is condensed due to the use time of the etchant composition, the weight% of phosphoric acid with respect to the total weight of the etchant composition can be increased to prevent the occurrence of wiring. , The loss of pixel electrodes or reflective films.

Specific examples of the acetate contained in the silver-containing film-containing etching solution composition of the present invention include potassium acetate (CH ₃ COOK), sodium acetate (CH ₃ COONa), and ammonium acetate (CH ₃ COONH ₄ ). However, it is not limited to these, and one or more types can be selected from these and used.

The acetate (F) may contain 0.1 to 3% by weight, and more preferably 0.5 to 2% by weight, based on the total weight of the silver (Ag) film-containing etching solution composition of the present invention. When the content of the acetate is less than 0.1% by weight, the etching effect is small, and the effect of reducing the amount of etching is not good. When it exceeds 3% by weight, the etching rate is reduced, and the desired result cannot be achieved. The etching rate may cause problems in subsequent processes due to the generation of silver residue.

(G) Deionized water

The deionized water contained in the silver (Ag) -containing thin film-containing etching solution composition of the present invention is not particularly limited. For semiconductor processes, it is preferable to use deionized water having a specific resistance of 18 MΩ / cm or more.

The deionized water is contained as a balance with respect to a total of 100% by weight of the silver (Ag) film-containing etching solution composition of the present invention.

The silver (Ag) thin film-containing etching solution composition of the present invention may additionally contain, in addition to the aforementioned components, a member selected from the group consisting of an etching regulator, a surfactant, a metal ion blocking agent, an anticorrosive agent, a pH regulator, and It is not limited to one or more of these other additives. In order to make the effect of the present invention more favorable within the scope of the present invention, the additive can be selected and used from additives commonly used in the art.

Moreover, it is preferable that the component which comprises the etching solution composition of the silver (Ag) containing film of this invention has the purity for semiconductor processes.

The silver (Ag) -containing thin film to which the silver (Ag) -containing thin film-containing etching solution composition of the present invention is applied contains silver (Ag) as a constituent component of the film, and examples thereof include a single film of silver (Ag) or a silver alloy, or Although a multilayer film composed of a single film and a transparent conductive film is described, it is not limited thereto.

The silver-containing thin film is not particularly limited, and examples thereof include a silver (Ag) film, silver as a main component, and a material selected from the group consisting of neodymium (Nd), copper (Cu), palladium (Pd), and niobium (Nb). ), A silver alloy film of one or more of nickel (Ni), molybdenum (Mo), chromium (Cr), magnesium (Mg), tungsten (W), thorium (Pa), and titanium (Ti), A single film of silver nitride, silver silicide, silver carbide, or silver oxide; a multilayer film composed of the single film and a transparent conductive film; and the like.

Specific examples of the transparent conductive film include, but are not limited to, indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), or gallium zinc indium oxide (IGZO). .

More specific examples of the multilayer film include a double film such as transparent conductive film / silver (Ag) or transparent conductive film / silver alloy, and a transparent conductive film / silver (Ag) / transparent conductive film. Or a triple film such as a transparent conductive film / silver alloy / transparent conductive film, but it is not limited to this.

In addition, the present invention relates to an etching method of a silver-containing film, including: (1) a step of forming a silver (Ag) -containing film on a substrate, and (2) selectively leaving a photoreactive substance on the silver-containing film. Step, and (3) a step of etching the silver-containing film using the silver-containing film-containing etching solution composition of the present invention.

In the etching method of the present invention, the photo-reactive substance is preferably a general photoresist substance, and can be selectively left in a normal exposure and development process.

Furthermore, the present invention provides a method for manufacturing an array substrate for a display device. The method for manufacturing an array substrate for a display device includes: a) a step of forming a gate wiring on a substrate; and b) a step of forming a gate wiring on the substrate including the gate wiring. A step of a gate insulating layer, c) a step of forming an oxide semiconductor layer on the gate insulating layer, d) a step of forming a source electrode and a drain electrode on the oxide semiconductor layer, and e) forming and the The step of connecting the drain electrode to the pixel electrode or the reflective film, wherein the step e) includes forming silver (Ag) -containing on the substrate. The thin film is etched with the silver-containing thin film-containing etching solution composition of the present invention to form a pixel electrode or a reflective film.

The display device may be an organic light emitting element (OLED) or a liquid crystal display device (LCD), and the array substrate for the display device may be a thin film transistor (TFT) array substrate.

The silver-containing thin film may be a single film of silver (Ag) or a silver alloy, or a multilayer film composed of the single film and a transparent conductive film. The silver alloy is composed of silver (Ag) as a main component and contains neodymium ( Nd), copper (Cu), palladium (Pd), niobium (Nb), nickel (Ni), molybdenum (Mo), chromium (Cr), magnesium (Mg), tungsten (W), thorium (Pa), or titanium The alloy form of other metals such as (Ti) may be a form of silver nitride, silver silicide, silver carbide, silver oxide, or the like.

Examples of the transparent conductive film include, but are not limited to, indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), or gallium zinc indium oxide (IGZO).

That is, an array substrate for a display device manufactured by the method for manufacturing an array substrate for a display device is also included in the scope of the present invention. At this time, the display device may be an organic light emitting element (OLED) or a liquid crystal display device (LCD), but is not limited thereto.

In addition, the present invention can provide a wiring etched using the silver (Ag) -containing thin film-containing etchant composition of the present invention.

In more detail, the wiring may be a trace wiring that reads signals sensed mainly at X and Y coordinates in a touch screen panel (TSP) or a silver nanowire wiring for flexibility.

The wiring may be a single film composed of silver (Ag) or a silver alloy, or a multilayer film composed of the single film and a transparent conductive film. As for the contents of the single film of the silver alloy and the multilayer film composed of the single film and the transparent conductive film, the contents described for the silver (Ag) -containing film can be similarly applied.

The silver thin film-containing etching solution composition of the present invention can be used as a wiring and reflection film in the production of a display device (OLED, LCD, etc.) as a single film made of silver (Ag) or a silver alloy, and the single film It is used for etching a multilayer film made of a film and a transparent conductive film. In addition, when wiring of the touch screen panel is formed, it can be used for etching. That is, the silver-containing thin film-containing etching solution composition of the present invention can be variously applied to the production of OLED, LCD, TSP, and the like.

Hereinafter, the present invention will be described in more detail using examples. However, the following embodiments are used to illustrate the present invention, and the present invention is not limited to the following embodiments, and various modifications and variations can be made. The scope of the present invention is determined by the technical idea of the patent application scope described later.

<Examples and Comparative Examples> Production of Etching Solution Composition

The etching solution compositions of Examples 1 to 14 and Comparative Examples 1 to 12 were produced with the compositions and contents shown in Table 1 below.

<Experimental Example> Performance Test of Etching Solution Composition

An organic insulating film was vapor-deposited on the substrate, and a triple film of ITO / Ag / ITO was vapor-deposited thereon, and this was cut to a size of 500 × 600 mm using a diamond knife to prepare a test piece.

Using the etchant compositions of Examples 1 to 14 and Comparative Examples 1 to 12, the following performance tests were performed.

Experimental example 1. Measurement of CD bias

The experimental equipment (model name: ETCHER, KCTech) of the spray etching method was charged with the silver etching solution compositions of Examples 1 to 14 and Comparative Examples 1 to 12, respectively, and the temperature was set to 40 ° C and heated. Then, when the temperature reached 40 ± 0.1 ° C, the etching process of the test piece was performed. The total etching time was set to 100 seconds.

The substrate was loaded, and spraying was started to achieve an etching time of 100 seconds. Then, the substrate was taken out, washed with deionized water, and then dried using a hot air drying device. After washing and drying, the substrate was cut, and the cross-section was measured using an electron scanning microscope (SEM; model name: SU-8010, manufactured by Hitachi). As a measurement standard of the limit dimensional deviation, the difference in the width of the wiring was measured from the width of both end portions of the photoresist (FIG. 1), and the following standards were evaluated. The results are shown in Table 2 below.

<Evaluation criteria>

Less than 0.5 μm: Excellent

0.5 ~ 1.0μm: Good

More than 1.0 μm: Defective

Experimental example 2. Measurement of residue

The experimental equipment (model name: ETCHER, KCTech) of the spray etching method was charged with the silver etching solution compositions of Examples 1 to 14 and Comparative Examples 1 to 12, respectively, and the temperature was set to 40 ° C and heated. Then, when the temperature reached 40 ± 0.1 ° C, the etching process of the test piece was performed. The total etching time was set to 100 seconds.

The substrate was loaded, and spraying was started to achieve an etching time of 100 seconds. Then, the substrate was taken out, washed with deionized water, dried with a hot air dryer, and the photoresist was removed using a photoresist stripper (PR stripper). After washing and drying, using an electron scanning microscope (SEM; model name: SU-8010, manufactured by Hitachi) to measure the phenomenon in which silver (Ag) remained in the portion not covered by the photoresist, that is, the residue, was used. The following standard evaluations are shown in Table 2 below.

<Evaluation criteria for residues>

No residue: No

Residue generation: Yes

Experimental example 3. Measurement of silver re-adsorption

The experimental equipment (model name: ETCHER, KCTech) of the spray etching method was charged with the silver etching solution compositions of Examples 1 to 14 and Comparative Examples 1 to 12, respectively, and the temperature was set to 40 ° C and heated. Then, when the temperature reached 40 ± 0.1 ° C, the etching process of the test piece was performed. The total etching time was set to 100 seconds.

The substrate was loaded, and spraying was started to achieve an etching time of 100 seconds. Then, the substrate was taken out, washed with deionized water, dried with a hot air dryer, and the photoresist was removed using a photoresist stripper (PR stripper). clear After washing and drying, a scanning electron microscope (SEM; model name: SU-8010, manufactured by Hitachi) was used to identify specific parts that could cause friction due to bending due to the exposed parts of dissimilar metals such as data wiring after etching. The phenomenon in which silver (Ag) was etched at the site was analyzed by comprehensive observation, and evaluated using the following criteria. The results are shown in Table 2 below.

<Evaluation Criteria for Resorption>

No re-adsorption: None

Re-adsorption occurs: Yes

Experimental example 4. Measurement of etching rate

The experimental equipment (model name: ETCHER (TFT), KCTech) of the spray etching method was charged with the silver etchant composition of Examples 1 to 14 and Comparative Examples 1 to 12, respectively, and the temperature was set to 40. When the temperature reached 40 ± 0.1 ° C after heating, the test piece was etched. The total etching time was set to 100 seconds.

End point detection (EPD) was measured with the naked eye, and the etching rate (E / R, Etch Rate) corresponding to time was obtained. The etching rate was evaluated only by the vertical etching rate (Fig. 4). By dividing the thickness of the etched metal film by EPD, the etch rate of Å (thickness) (Å / sec) per second (time) can be determined and evaluated using the following criteria. The results are shown in Table 2 below. in.

<Evaluation Criteria for Etching Speed>

Less than 20Å / sec: bad

20Å / sec to less than 50Å / sec: Good

Above 50Å / sec: Excellent

As can be seen from the results in Table 2, Examples 1 to 14 as the silver (Ag) thin film-containing etching solution composition of the present invention showed excellent results in the evaluation results of the CD bias and the etching rate. Good results confirmed that no silver residue and re-adsorption occurred.

In contrast, in Comparative Examples 1 to 12, it was confirmed that, in the evaluation results of the limit dimensional deviation, the etching rate, the generation of silver residue, and the occurrence of re-adsorption, one or more evaluations showed poor or inappropriate evaluation results.

Claims (7)

An etching solution composition containing a silver film, wherein, relative to the total weight of the composition, it contains: 40 to 60% by weight of phosphoric acid; 3 to 8% by weight of nitric acid; 5 to 20% by weight of acetic acid; 0.1 to 3% by weight of phosphate ; One or more salts selected from the group consisting of 0.1 to 3% by weight of nitrate and 0.1 to 3% by weight of acetate; and the remaining amount of deionized water; wherein the etching solution composition containing a silver film can etch silver or a silver alloy Composed of a single film or a multilayer film composed of the single film and a transparent conductive film, wherein the transparent conductive film is one selected from indium tin oxide, zinc indium oxide, tin zinc indium oxide, and gallium zinc indium oxide the above. The silver-containing thin film etching solution composition according to claim 1, wherein the multilayer film composed of a single film and a transparent conductive film is transparent conductive film / silver, transparent conductive film / silver alloy, transparent conductive film / silver / transparent conductive Film, or transparent conductive film / silver alloy / transparent conductive film. The etching solution composition for a silver-containing film according to claim 1, wherein the silver alloy contains silver and at least one selected from the group consisting of neodymium, copper, palladium, niobium, nickel, molybdenum, chromium, magnesium, tungsten, rhenium, and titanium. . The etching solution composition of the silver-containing film according to claim 1, wherein the phosphoric acid is The salt is one or more selected from the group consisting of sodium dihydrogen phosphate, disodium hydrogen phosphate, trisodium phosphate, potassium dihydrogen phosphate, dipotassium hydrogen phosphate, ammonium dihydrogen phosphate, diammonium hydrogen phosphate, and ammonium phosphate. The etching solution composition for a silver-containing film according to claim 1, wherein the nitrate is at least one selected from the group consisting of potassium nitrate, sodium nitrate, and ammonium nitrate. The etching solution composition for a silver-containing film according to claim 1, wherein the acetate is at least one selected from the group consisting of potassium acetate, sodium acetate, and ammonium acetate. A method for manufacturing an array substrate for a display device. The method for manufacturing an array substrate for a display device includes: a) a step of forming a gate wiring on a substrate; and b) a step of forming a gate insulating layer on a substrate including the gate wiring. Step, c) a step of forming an oxide semiconductor layer on the gate insulating layer, d) a step of forming a source electrode and a drain electrode on the oxide semiconductor layer, e) forming a pixel electrode or a reflection electrode connected to the drain electrode A step of forming a film, wherein the step e) includes forming a silver-containing thin film on the substrate, and etching the silver-containing thin film-containing etching solution composition as claimed in claim 1 to form a pixel electrode or a reflective film.