TW201812102A - Etching solution composition for silver layer and method for fabricating metal pattern and method for manufacturing display substrate using the same - Google Patents

Abstract

The present disclosure relates to an etching solution composition for a silver layer including (a) phosphoric acid (H3PO44), (b) nitric acid (HNO3), (c) acetic acid (CH3COOH), (d) a phosphate compound (e) a sodium-based compound, and (f) water, and a method for fabricating a metal pattern and a method for manufacturing a display substrate using the same.

Description

Etching solution composition for silver layer, method for making metal pattern using the same, and method for making display substrate

The present disclosure relates to an etching solution composition for a silver layer, a display substrate using the etching solution composition, and a method of manufacturing a metal pattern and a method of manufacturing a display substrate using the etching solution composition. The etching solution composition includes : (A) phosphoric acid (H ₃ PO ₄ ); (b) nitric acid (HNO ₃ ); (c) acetic acid (CH ₃ COOH); (d) phosphate compounds; (e) sodium-based compounds; and (f) water .

With the era of comprehensive information, the field of displays that process and display large amounts of information has grown rapidly, and in response to this phenomenon, various flat panel displays have been developed and attracted attention.

Examples of such flat panel display devices include: liquid crystal display devices (LCD), plasma display panel devices (PDP), field emission display devices (FED), electroluminescence display devices (ELD), organic light emitting diodes (OLEDs) ), Etc., and these flat panel display devices are used for various purposes not only in the field of consumer electronics (such as televisions and video recorders), but also in computers (such as notebook computers, mobile phones, etc.). These flat panel display devices are rapidly replacing existing cathode ray tubes (NIT) with their excellent characteristics such as thinness, light weight, and low power consumption.

In particular, OLEDs can be driven at a low voltage while emitting light by the device itself, and thus have been rapidly applied to the market of small displays such as mobile devices. this In addition, after the commercialization of small displays, the commercialization of OLEDs in large-sized TVs is just around the corner.

Meanwhile, conductive metals such as indium tin oxide (ITO) and indium zinc oxide (IZO) have relatively excellent light transmittance and have electrical conductivity, and therefore, have been widely used as electrodes of color filters used in flat panel display devices. However, these metals also have high resistance and become an obstacle to the enlargement and high resolution of the flat panel display device by improving the response speed.

In addition, in the case of a reflecting plate, an aluminum (Al) reflecting plate has been mainly used for products, however, it has been pursued to change the material to a metal having a higher reflectance, thereby obtaining low power consumption by improving brightness. For this reason, attempts have been made to use silver (Ag, specific resistance of about 1.59) with lower specific resistance and higher brightness than the metal used in flat-panel display devices in the electrodes of the color filters, LCD or OLED lines, and reflectors. μΩ.cm) layers, silver alloys, or multilayers including these to achieve the enlargement, high resolution, and low power consumption of flat panel display devices, and the development of etching solutions to use these materials has been required.

However, silver has extremely poor adhesion to lower substrates (for example, insulating substrates such as glass, or semiconductor substrates formed with intrinsic amorphous silicon, doped amorphous silicon, etc.), so it is not easy to deposit, and it is easy to cause wires. Bulge or peel. In addition, when a silver (Ag) conductive layer is deposited on a substrate, an etching solution is used to pattern the conductive layer. When an existing etching solution is used here as such an etching solution, silver (Ag) is excessively etched or unevenly etched, causing the line to bulge or peel, and the side profile of the line is deteriorated.

Korean Patent Application Publication No. 10-2008-0110259 discloses an etching solution composition for a silver layer, including phosphoric acid, nitric acid, acetic acid, monosodium phosphate (NaH ₂ PO ₄ ), and the like, but has a problem in that: The etching solution composition cannot suppress damage to the S / D line (Ti / Al / Ti three layers) exposed to the pad unit.

In view of the above, there is a need to develop an etching solution composition for a silver layer capable of suppressing damage to S / D lines (Ti / Al / Ti three layers) exposed to a pad unit.

Prior art literature Patent literature

[Patent Document 1] Korean Patent Application Publication No. 10-2008-0110259

The present disclosure aims to provide an etching solution that can be used for a single layer formed of silver (Ag) or a silver alloy, and a multilayer formed of the single layer and an indium oxide layer, and preferably an indium oxide layer / A multilayer formed by a silver or indium oxide layer / silver / indium oxide layer, and can be used for wet etching to suppress silver re-adsorption without damaging the data lines exposed to the pad unit, and exhibits etching uniformity.

The present disclosure also aims to provide a display substrate and a line made using the etching solution composition for a silver layer.

In view of the above, an aspect of the present disclosure provides an etching solution composition for a silver (Ag) layer, including: phosphoric acid (H3PO4), nitric acid (HNO3), acetic acid (CH3COOH), phosphate compounds, and aluminum (Al) etching Inhibitors, and deionized water.

Another embodiment of the present disclosure provides a method for making a metal pattern, including: forming one or more layers on a substrate, the one or more layers being selected from a single layer of silver or a silver alloy and made of silver or a silver alloy A multi-layer formed of a single layer and an indium oxide layer; and the one or more layers formed above are etched with the etching solution composition for a silver layer of the present disclosure.

Another embodiment of the present disclosure provides a method for fabricating a display substrate, including: forming a gate electrode on a substrate; forming a gate insulating layer on a substrate including the gate electrode; and forming a gate insulating layer on the substrate Forming a semiconductor layer on; forming a source and a drain on the semiconductor layer; and forming a pixel electrode connected to the drain; wherein the gate electrode is formed on a substrate and the source electrode is formed on the semiconductor layer And any one or more of a drain electrode and forming a pixel electrode connected to the drain electrode include forming a single layer selected from a single layer formed of silver or a silver alloy and a multiple layer formed of the single layer and an indium oxide layer A process of one or more layers, and a process of forming each electrode by etching the one or more layers formed above with the etching solution composition for a silver layer of the present disclosure.

FIG. 1 is a photograph of aluminum damage evaluation when etching titanium / aluminum / titanium using the etching solution composition for a silver layer in Example 4 (side etching is 0.1 μm or less-very good); 2 is a photograph of the evaluation of aluminum damage when etching titanium / aluminum / titanium using the etching solution composition for a silver layer in Comparative Example 8 (side etching is 0.4 μm or more-poor); 3 is a photograph of an APC etching profile evaluation when an indium oxide layer / silver / indium oxide layer is etched with the etching solution composition for a silver layer in Example 4 (side etching is 0.3 μm or less-excellent); FIG. 4 is a photograph of APC etching profile evaluation when an indium oxide layer / silver / indium oxide layer is etched with the etching solution composition for a silver layer in Comparative Example 4 (side etching is 1 μm or more-difference).

Hereinafter, the present disclosure will be described in detail.

Embodiments of the present disclosure provide an etching solution composition for a silver layer, including: (a) phosphoric acid (H ₃ PO ₄ ); (b) nitric acid (HNO ₃ ); (c) acetic acid (CH ₃ COOH) (D) a phosphate compound; (e) a sodium-based compound; and (f) water. The inventors of the present disclosure have experimentally confirmed that when (e) a sodium-based compound is included in the composition as an aluminum etching inhibitor and the composition is used in the manufacture of a liquid crystal display device for use as a line and a reflection layer When a single layer or multiple layers of silver (Ag) or a silver alloy is used, it shows the etching uniformity of the line and reflective layer of the pattern unit without damaging the titanium / aluminum / aluminum in titanium (exposed to the pad unit) Data line), and the problem of silver (Ag) re-adsorption caused by data line damage in the pad unit can also be improved; and the inventors have completed the present disclosure.

Hereinafter, the present disclosure will be described in detail by each component.

(a) Phosphoric acid (H ₃ PO ₄ )

Phosphoric acid (H ₃ PO ₄ ) included in the etching solution composition for a silver layer in the present disclosure is a component used as a main oxidant, and functions as an indium oxide layer / silver (Ag) / indium oxide layer The effect of silver (Ag) and indium oxide layers in oxidation and wet etching.

The content of phosphoric acid (H ₃ PO ₄ ) included in the etching solution composition for the silver layer is 40 to 60% by weight with respect to the total weight of the etching solution composition. A phosphoric acid content of less than 40% by weight may cause a decrease in the etching rate and an etching contour defect; when the content is more than 60% by weight, the etching rate of the indium oxide layer decreases, and the etching rate of silver increases too much, so that the upper indium Spikes are caused in the oxide layer and the lower indium oxide layer, which causes problems in subsequent processes.

(b) Nitric acid (HNO ₃ )

The nitric acid (HNO ₃ ) included in the etching solution composition for a silver layer of the present disclosure is a component used as an auxiliary oxidizing agent, and functions as an indium oxide layer / silver (Ag) / indium oxide layer. The effect of the oxidation of the silver (Ag) and indium oxide layers and the results of wet etching.

The content of nitric acid (HNO ₃ ) included in the etching solution composition for the silver layer is 3 to 8% by weight with respect to the total weight of the etching solution composition. When the nitric acid content is less than 3% by weight, the etching rate of silver (Ag) and ITO is reduced, so the uniformity in the substrate is deteriorated, causing defects; and when the content is more than 8% by weight, the upper indium is oxidized. The etch rate of the object layer and the lower indium oxide layer is accelerated, causing a cut in the upper and lower indium oxide layers, which causes problems in subsequent processes.

(c) Acetic acid (CH ₃ COOH)

Acetic acid (CH ₃ COOH) included in the etching solution composition for a silver layer of the present disclosure is a component used as an auxiliary oxidant, and functions as an indium oxide layer / silver (Ag) / indium oxide layer The effect of silver (Ag) and indium oxide layers in oxidation and wet etching.

The content of acetic acid (CH ₃ COOH) included in the etching solution composition for a silver layer of the present disclosure with respect to the total weight of the etching solution composition is 5 to 20% by weight. The content of acetic acid (CH ₃ COOH) below 5% by weight has a problem of causing defects due to uneven etching rates in the substrate. When the content is higher than 20% by weight, foam is generated, and when the foam is present in the substrate, complete etching cannot be obtained, which causes problems in subsequent processes.

(d) Phosphate compounds

The phosphate compound is a component used as a phosphate compound additive in an etching solution composition for a silver layer of the present disclosure, and reduces the CD skew of a thin layer during wet etching, and also controls the etching rate to obtain uniformity Etching.

The phosphate compound is one or more selected from the group consisting of monosodium phosphate, disodium phosphate, and trisodium phosphate, and most preferably monosodium phosphate.

The content of the phosphate compound is 0.1 to 3% by weight based on the total weight of the etching solution composition. When the content of monosodium phosphate is less than 0.1% by weight, the etching uniformity in the substrate is reduced and a silver residue may also be partially formed in the substrate; while the content of the phosphate compound is greater than 3% by weight, there may be process problems. , Because the etching rate is reduced and the target etching rate cannot be obtained.

(e) Sodium-based compounds

The sodium-based compound in the etching solution composition for the silver layer of the present invention is an aluminum etching inhibitor, and can suppress the data line exposed to the titanium / aluminum / titanium metal multilayer (exposed to the pad unit) during wet etching ) To prevent damage, and can improve problems that may occur in subsequent processes.

The sodium-based compound may be preferably one or more selected from the group consisting of sodium nitrate, sodium sulfate, sodium acetate, sodium nitrite, and sodium sulfite.

The content of the sodium-based compound is 0.1 to 3% by weight based on the total weight of the etching solution composition. The content of Al etching inhibitor below 0.1% by weight may not be able to suppress the damage of the data line, and the content of more than 3% by weight may have process problems because the etching rate of Ag is reduced and the target etching rate cannot be obtained.

(f) water

The water of the present disclosure may be included in a remaining amount such that the total weight of the etching solution composition becomes 100% by weight.

The etching solution composition for a silver layer of the present disclosure can etch a single layer formed of silver or a silver alloy and a plurality of layers formed of the single layer and the indium oxide layer. Specifically, the indium oxide may be one or more types selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), and indium gallium zinc oxide (IGZO), And the multilayer formed by the single layer and the indium oxide layer may be an indium oxide layer / silver, an indium oxide layer / silver alloy, an indium oxide layer / silver / indium oxide layer, or an indium oxide layer / silver Alloy / indium oxide layer.

When the etching solution composition of the present disclosure is used in the production of a liquid crystal display device for a single layer of silver or a silver alloy used as a line and a reflection layer, a multilayer of the single layer and an indium oxide layer, And more preferably when used for a multilayer formed of an indium oxide layer / silver or an indium oxide layer / silver / indium oxide layer, it exhibits etching uniformity for the line and reflective layers of the pattern unit without damaging the titanium / The aluminum in aluminum / titanium (the data line exposed to the pad unit), and the problem of silver (Ag) re-adsorption caused by the data line damage in the pad unit can also be improved.

In addition to the above components, the etching solution composition for a silver layer of the present disclosure may further include additives commonly used in the art.

In addition, the present disclosure relates to a method for making a metal pattern, including: (i) forming one or more layers on a substrate, the one or more layers being selected from a single layer of silver or a silver alloy and a layer made of silver or a silver alloy A single layer and a multiple layer formed by an indium oxide layer; and (ii) the one or more layers formed above are etched with the etching solution composition for a silver layer of the present disclosure.

In the method for making a metal pattern, step (i) includes: providing a substrate and forming one or more layers on the substrate, the one or more layers being selected from a single layer of silver (Ag) or a silver alloy and made of silver (Ag) or a multilayer of a silver alloy and an indium oxide layer.

The substrate needs to be cleaned using conventional methods, and wafers, glass substrates, stainless steel substrates, plastic substrates, or quartz substrates can be used. As a method of forming a single layer of silver (Ag) or a silver alloy or a multilayer formed of a single layer of silver (Ag) or a silver alloy and an indium oxide layer on a substrate, various methods known to those skilled in the art can be used. The formation is preferably performed by a vacuum deposition method or a sputtering method.

In step (ii), a photoresist is formed on the one or more layers formed in step (i), the photoresist is selectively exposed using a mask, and the exposed photoresist is exposed. The post-bake agent is developed, and the post-bake photoresist is developed to form a photoresist pattern.

By using the etching solution composition for a silver layer of the present disclosure to etch the one or more layers on which a photoresist pattern is formed, a metal is completed pattern.

In addition, the present disclosure relates to a method for manufacturing a display substrate, the method including: a) forming a gate electrode on a substrate; b) forming a gate insulating layer on a substrate including the gate electrode; c) Forming a semiconductor layer on the gate insulating layer; d) forming a source and a drain on the semiconductor layer e) forming a pixel electrode connected to the drain; wherein in step a), step d), and step e) Any one or more of: includes a process of forming one or more layers selected from a single layer of silver or a silver alloy and a plurality of layers formed from a single layer of silver (Ag) or a silver alloy and an indium oxide layer, and by using The etching solution composition for a silver layer of the present disclosure etches the one or more layers formed above to form each electrode.

The display substrate may be a thin film transistor (TFT) array substrate.

In the method for manufacturing a display substrate according to the present disclosure, step a) includes: a1) depositing a single layer selected from silver or a silver alloy or a single layer of silver (Ag ) Or one or more of the multiple layers formed by a single layer of a silver alloy and an indium oxide layer; and a2) using the etching solution composition for a silver layer of the present disclosure to pattern the one or more layers formed above Form a gate electrode. Here, the method of forming one or more layers on the substrate is not limited to the method described above.

In the method for manufacturing a display substrate according to the present disclosure, in step b), a gate insulating layer is formed by depositing silicon nitride (SiNX) on top of a gate electrode formed on a substrate. Here, a material for forming the gate insulating layer is not limited to silicon nitride (SiNX), and a material selected from various inorganic insulating materials including silicon oxide (SiO ₂ ) may be used to form the gate insulating layer.

In the method for manufacturing a display substrate according to the present disclosure, a semiconductor layer is formed on the gate insulating layer using a chemical vapor deposition method (CVD) in step c). In other words, after continuously forming the active layer and the ohmic contact layer, the resultant is patterned by dry etching. Here, the active layer is usually formed of pure amorphous silicon (a-Si: H), and the ohmic contact layer is formed of amorphous silicon (n + a-Si: H) including impurities. When the active layer and the ohmic contact layer are formed, a chemical vapor deposition (CVD) method may be used, however, the method is not limited thereto.

In the method for manufacturing a display substrate according to the present disclosure, step d) includes: d1) forming a source and a drain on the semiconductor layer; and d2) forming an insulating layer on the source and the drain. In step d1), one or more layers selected from a single layer of silver or a silver alloy and a multiple layer formed of the single layer and the indium oxide layer are deposited on the ohmic contact layer by a sputtering method, and the present disclosure is used. The resulting etching solution composition for a silver layer etched the resultant to form a source and a drain. Here, the method of forming one or more layers on the substrate is not limited to the method described above. In step d2), the insulation layer is selected from an inorganic insulation group including silicon nitride (SiNx) and silicon oxide (SiO ₂ ), or an organic insulation including a benzocyclobutene (BCB) -based resin and an acrylic fluorene-based resin. And formed as a single layer or a double layer on the source and the drain. The materials of the insulating layer are not limited to those described above.

In the method for manufacturing a display substrate according to the present disclosure, a pixel electrode connected to a drain electrode is formed in step e). For example, one or more layers selected from a single layer of silver or a silver alloy and a plurality of layers formed from the single layer and an indium oxide layer are deposited by a sputtering method, and combined with the etching solution for a silver layer of the present disclosure. The resultant is etched to form a pixel electrode. The method of depositing the indium oxide layer is not limited to the sputtering method.

In addition, the present disclosure may provide a display substrate including a metal layer etched with the etching solution composition for a silver layer in the present disclosure.

More specifically, the display device may be a thin film transistor (TFT) substrate of a liquid crystal display device (LCD) or an organic light emitting device (OLED).

In addition, the OLED may have a metal layer laminated on top and bottom, and the metal layer may be etched with an etching solution composition for a silver layer in the present disclosure. In addition, when the metal layers are laminated on the top and bottom, the metal layer can function as a reflective layer and a semi-transmissive layer in the OLED by controlling the thickness.

The reflective layer needs to have a thickness through which almost no light can pass, and the semi-transmissive layer needs to have a thickness through which almost all light can pass. Therefore, the metal layer preferably has a thickness of 50 Å to 5000 Å.

The metal layer may be a single layer formed of silver (Ag) or a silver alloy, or a plurality of layers formed of the single layer and an indium oxide layer.

Silver alloys have silver as the main component and can have various forms, for example Such as alloy forms including other metals such as Nd, Cu, Pd, Nb, Ni, Mo, Ni, Cr, Mg, W and Ti and silver nitrides, silicides, carbides and oxides. However, the silver alloy is not limited to this.

In addition, the indium oxide is one or more types selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), and indium gallium zinc oxide (IGZO).

In addition, the multilayer may be a multilayer formed of an indium oxide layer / silver, an indium oxide layer / silver alloy, an indium oxide layer / silver / indium oxide layer, or an indium oxide layer / silver alloy / indium oxide layer.

In addition, the present disclosure may provide a line etched with the etching solution composition for a silver layer in the present disclosure.

More specifically, the line may be a trace in a touch screen panel (TSP) that reads signals that are usually sensed at x and y coordinates, or a flexible silver nanowire.

In addition, the wire is formed of a single layer formed of silver (Ag) or a silver alloy or a multilayer formed of the single layer and an indium oxide layer.

Silver alloys have silver as the main component and can have various forms, including, for example, other metals such as Nd, Cu, Pd, Nb, Ni, Mo, Ni, Cr, Mg, W, and Ti, and silver nitrides, silicides, and carbides Alloys of metals and oxides. However, the silver alloy is not limited to this.

In addition, the indium oxide may be one or more types selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), and indium gallium zinc oxide (IGZO).

In addition, the multiple layers may be formed of an indium oxide layer / silver, an indium oxide layer / silver alloy, an indium oxide layer / silver / indium oxide layer, or an indium oxide layer / silver alloy / indium oxide layer Multiple layers.

Hereinafter, the present disclosure will be described in more detail with reference to examples. However, the following embodiments are intended to describe the present disclosure more specifically, and the scope of the present disclosure is not limited to the following embodiments. Within the scope of the present disclosure, those skilled in the art can appropriately modify and change the following embodiments.

<Preparation of Etching Solution Composition for Silver Layer> Examples 1-7 and Comparative Examples 1-10

The etching solution compositions for the silver layer in Examples 1-7 and Comparative Examples 1-10 were prepared based on the composition ingredients listed in Tables 1 and 2 below, and the remaining amount of water included the total of the etching solution composition. The weight becomes 100% by weight.

Test Example 1 Evaluation of Aluminum Damage of Etching Solution for Silver Layer

The etching solution compositions for silver layers of Examples and Comparative Examples were used to etch titanium / aluminum / titanium. Specifically, the prepared etching solution composition for a silver layer was placed in a spray etching type test apparatus (model name: Mini ETCHER (TFT), manufactured by AST) In the process, the temperature is set at 40 ° C. and the temperature is increased, and when the temperature reaches 40 ± 0.1 ° C., an etching process is performed. Etching was performed, and based on endpoint detection (EPD), the total etch time was 50% over-etched.

The substrate is put therein and spraying is started, and when the etching is completed, the substrate is taken out, washed with deionized water, and then dried with a blower, and the photoresist is removed with a photoresist release agent (PR release agent). Resist. After washing and drying, a scanning electron microscope (SEM; model name: S-4700, manufactured by HITACHI, Ltd.) was used to evaluate aluminum damage. The evaluation criteria are as follows, and the results are shown in FIG. 1, FIG. 2, and Table 1.

[Aluminum damage evaluation standard]

◎: Excellent (Side Etching: <0.1 μm)

○: Excellent (Side etching: <0.2 μm,> 0.1 μm)

△: Good (side etching: <0.3 μm,> 0.2 μm)

x: poor (side etching:> 0.3 μm)

FIG. 1 is a photograph of aluminum damage evaluation when titanium / aluminum / titanium is etched using the etching solution composition for a silver layer in Example 4, and the side etching is 0.1 μm or less, indicating that it is excellent.

FIG. 2 is a photograph of aluminum damage evaluation when titanium / aluminum / titanium is etched with the etching solution composition for a silver layer in Comparative Example 8, and the side etching is 0.4 μm or more, indicating a poor result.

APC Evaluation Test Example 2 etch profile of the etching solution composition for a silver layer,

For the APC etching profile, the indium oxide layer / silver / indium oxide layer was etched using the etching solution compositions for the silver layer of the examples and comparative examples, and the prepared etching solution composition for the silver layer was placed in In the spray etching type test device (model name: Mini ETCHER (TFT), manufactured by AST), the temperature was set at 40 ° C and the temperature was increased, and when the temperature reached 40 ± 0.1 ° C, the etching process was performed. Etching was performed, and based on endpoint detection (EPD), the total etch time was 50% over-etched.

The substrate is put therein and spraying is started, and when the etching is completed, the substrate is taken out, washed with deionized water, and then dried with a blower, and the photoresist is removed with a photoresist release agent (PR release agent). Resist. After washing and drying, a scanning electron microscope (SEM; model name: S-4700, manufactured by HITACHI, Ltd.) was used to evaluate the degree of CD skew and the generation of etching residues. The evaluation criteria are as follows, and the results are shown in Figures 3, 4 and It is shown in Table 2.

[APC Etching Profile Evaluation Standard]

◎: Excellent (Side Etching: <0.3 μm)

○: Excellent (side etching: <0.5 μm,> 0.3 μm)

△: Good (Side etching: <0.5 μm,> 0.1 μm)

x: poor (side etching:> 0.1 μm)

FIG. 3 is a photograph of APC etching profile evaluation when an indium oxide layer / silver / indium oxide layer is etched using the etching solution composition for a silver layer in Example 4, and the side etching is 0.3 μm or less, indicating that it is excellent.

FIG. 4 is a photograph of APC etching profile evaluation when an indium oxide layer / silver / indium oxide layer is etched with an etching solution composition for a silver layer of Comparative Example 4, and a side etch is 1 μm or more, indicating a difference.

From the above test results, it was verified that the etching solution composition for a silver layer of the present disclosure has very excellent effects in terms of aluminum damage and APC etching profile.

At the same time, the composition of the comparative example did not perform well in terms of aluminum damage and / or APC etching profile, and in particular, a comparison using ethylene diamine tetraacetic acid (EDTA) instead of a sodium-based compound as an etching inhibitor was verified. In Example 10, the problem of aluminum damage is not addressed. With these tests, it was verified that the etching solution composition for a silver layer of the present disclosure using a sodium-based compound as an etching inhibitor has an excellent effect on solving the problem of aluminum damage.

Therefore, when the etching solution composition for a silver layer of the present disclosure is used for a single layer formed of silver (Ag) or a silver alloy used as a line and a reflection layer in the production of a display device, the single layer and The multilayer formed of an indium oxide layer, and more preferably used for the multilayer formed of an indium oxide layer / silver or an indium oxide layer / silver / indium oxide layer, can exhibit the effect on the lines and reflective layers of the pattern unit. Etching uniformity without damaging aluminum in titanium / aluminum / titanium (data lines exposed to the pad unit), and the problem of silver (Ag) re-adsorption caused by data line damage in the pad unit can also be improved .

The etching solution composition for a silver layer of the present disclosure can be used for wet etching It is etched to suppress the re-adsorption of silver (Ag) without damaging the data lines exposed to the pad unit, and exhibits etching uniformity.

In addition, a display substrate including a metal layer etched with the etching solution composition for a silver layer of the present disclosure has excellent driving characteristics.

Claims (10)

An etching solution composition for a silver layer includes: phosphoric acid; nitric acid; acetic acid; a phosphate compound; a sodium-based compound; and water. The etching solution composition for a silver layer according to claim 1, comprising: 40% to 60% by weight of phosphoric acid relative to the total weight of the composition; 3% to 8% by weight of nitric acid; and 5% by weight to acetic acid 20% by weight; 0.1% to 3% by weight of the phosphate compound; 0.1% to 3% by weight of the sodium-based compound; and the balance of water. The etching solution composition for a silver layer according to claim 1, wherein the phosphate compound is one or more selected from the group consisting of monosodium phosphate, disodium phosphate, and trisodium phosphate. The etching solution composition for a silver layer as claimed in claim 1, wherein the sodium-based compound is an aluminum etching inhibitor. The etching solution composition for a silver layer according to claim 1, wherein the sodium-based compound is one or more selected from the group consisting of sodium nitrate, sodium sulfate, sodium nitrite, sodium sulfite, and sodium acetate. The etching solution composition for a silver layer as claimed in claim 1, which etches a single layer formed of silver or a silver alloy, and a plurality of layers formed of the single layer and the indium oxide layer. The etching solution composition for a silver layer according to claim 6, wherein the indium oxide is one or more selected from the group consisting of indium tin oxide, indium zinc oxide, indium tin zinc oxide, and indium gallium zinc oxide. Types of. The etching solution composition for a silver layer according to claim 6, wherein the multilayer formed by the single layer and the indium oxide layer is indium oxide layer / silver, indium oxide layer / silver alloy, indium oxide Layer / silver / indium oxide layer, or indium oxide layer / silver alloy / indium oxide layer. A method for making a metal pattern, comprising: forming one or more layers on a substrate, the one or more layers being selected from a single layer of silver (Ag) or a silver alloy, and a single layer of silver or a silver alloy and indium The multilayer formed by the oxide layer; and the one or more layers formed above are etched with the etching solution composition for a silver layer according to any one of claims 1 to 8. A method for manufacturing a display substrate includes: forming a gate electrode on a substrate; forming a gate insulating layer on a substrate including the gate electrode; forming a semiconductor layer on the gate insulating layer; and forming a semiconductor layer on the gate insulating layer Forming a source electrode and a drain electrode thereon; and forming a pixel electrode connected to the drain electrode; wherein the gate electrode is formed on a substrate, the source and drain electrodes are formed on the semiconductor layer, and the drain electrode is formed with the drain electrode; Any one or more of the connected pixel electrodes include a process of forming one or more layers selected from a single layer formed of silver or a silver alloy and a plurality of layers formed of the single layer and an indium oxide layer, and by using The process of etching the one or more layers formed above to form each electrode by the etching solution composition for a silver layer as in any one of claims 1 to 8.