五 、發明説明（ 【本發明之領域】 — 本發月係關於一種蝕刻液組合物以及蝕刻方法，尤指 C用於銀合金之蝕刻液組合物以及蝕刻方法。 【本發明之背景】 目則〈半導體或平面顯*裝置，乡使祕金屬作為導 二材料但疋因為路金屬之阻値高，因此研究者一直在 =利用阻値較低之金屬作為晶片導線之材料。以往曾經 、、艮作4導線之材料，但是因為無適當狀之餘刻 展、、且成物，所以並未有廣泛之運用。 而含銀量超侧％以上之銀合金，雖然阻値未若銀金 =一般低，但是其阻値遠低於鉻金屬，仍為適當之晶片導 :材料’然而由於銀合金未具有適當之蝕刻液，所以並沒 有廣泛應用於晶片或面板之言光製程。 發明人爰因於此，本於積極發明之精神，亟思一種可 以解決上制題之「銀合金用㈣液组合物以及触刻方 法」’幾經研究實驗終至完成此項嘉惠世人之發明。 【本發明之概述】 本發明之主要目的係在提供一種銀合金用蚀刻液，俾 能選擇性地且有效地用以對含銀量超過δ〇%以上之銀合金 《進行触刻並控制_速率，以於基板上形成銀合金之圖 樣0 588121 A7 B7 五、發明説明（2 ) 為達成上述之目的，本發明銀合金用蝕刻液，包含·· 0 · 1至1 0重量份之過硫酸鈉，與1至6 〇重量份之氨水；以 及30至99重量份之水。 本發明另一銀合金用蝕刻液，包含：1至3 〇重量份 之過硫酸鋼；1至1 〇重量份之硫酸；以及6 〇至9 8重量份之 水。 本發明又一銀合金用蚀刻液，包含：1至丨〇重量份 之過硫酸鋼，〇 · 〇 1至〇 · 5重量份之聯二硼酸鈉；以及8 8至 9 9重量份之水。 ’本發明銀合金之蚀刻方法，包含以下之步騾：先提 供一具銀合金表面之基板，且銀合金表面係塗覆有一層具 圖樣之光阻；以及將一銀合金蝕刻液塗覆於該基板之銀合 金表面或將該具銀合金之基板浸潰於該銀合金蝕刻液；其 中4銀合金餘刻液容含：1至3 0重量份之過硫酸鈉。 本發明另一銀合金之触刻方法，包含以下之步驟：先 k供具銀合金表面之基板，且銀合金表面係塗覆有一層 樣之光阻；以及將一銀合金蚀刻液塗覆於該基板之銀 合金表面或將該具銀合金之基板浸潰於該銀合金蝕刻液； 其中孩銀合金蝕刻液包含0.1至10重量份之過硫酸鈉；1 至60重量份之氨水；以及30至99重量份之水。 本焱明又一銀合金之蝕刻方法，包含以下之步騾：先 k供一具銀合金表面之基板，且銀合金表面係塗覆有一層 樣之光阻；以及將一銀合金蚀刻液塗覆於該基板之銀 一表面或將该具銀合金之基板浸潰於該銀合金蝕刻液； (請先閲讀背面之注意事項再填寫本頁各攔) 裝 -----訂---- 線！ $紙張尺度 5 Α4規格（210Χ云7公釐） 588121 A7 Γ_____Β7____ 五、發明説明（3 ) 其中該銀合金蝕刻液包含1至3 〇重量份之過硫酸鈉；1至 1 0重量份之硫酸；以及6 〇至9 8重量份之水。 本發明再一銀合金之蝕刻方法，包含以下之步騾： 先提供一具銀合金表面之基板，且銀合金表面係塗覆有一 層具圖樣之光阻；以及將一銀合金蝕刻液塗覆於該基板之 銀合金表面或將該具銀合金之基板浸潰於該銀合金蝕刻 液；其中該銀合金蝕刻液包含1至1 〇重量份之過硫酸鈉； 0.01至0.5重量份之聯二硼酸鈉；以及88至99重量份之 水。 由於本發明組成及方法新穎，能提供產業上利用，且 確有增進功效，故依法申請發明專利。 【較佳具體實施例之詳細説明】 . 本發明之蝕刻液組成物主要包含：0 · 1至1 〇重量份之 過硫酸鈉，與1至60重量份之氨水；以及30至99重量份之 水。本發明之蚀刻液組成物可以視需要選擇性地更包含 0 · 1至5重量份之弱鹼性鹽類或1至1 0重量份之醋酸鹽類。 適用於本發明之弱驗性鹽類無限制，較佳為碳酸氫鈉、碳 酸鈉、磷酸鈉或草酸鈉。該醋酸鹽類種類無限制，較佳為 醋酸铵或醋酸鋼。本發明之蚀刻液組成物系列可以另一變 化之系列同樣完成銀合金之蚀刻，其I虫刻液組成物包含1 至3 0重量份之過硫酸鈉；1至1 〇重量份之硫酸；以及6 〇至 ^ 6 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁各欄) 裝---------訂--------線—. 588121 Α7 Β7 五、發明説明（4 ) 9 8重量份之水。本發明之蚀刻液組成物系列也可以以又一 變化之系列同樣完成銀合金之蚀刻，該又一變化之蚀刻液 組成物包含1至1 0重量份之過硫酸鈉；〇 · 〇 1至〇 · 5重量份 之聯二硼酸鈉；以及8 8至9 9重量份之水。本發明銀合金 蝕刻液適用之銀合金為含銀量不小於8 0 %之銀合金。 為能讓貴審查委員能更瞭解本發明之技術内容，特 舉銀合金用蚀刻液較佳具體實施例説明如下。 實施例 1至8 將過硫酸鈉，氨水依照下表之比例調配溶液，並加入 水至1 0 0克配置成下列濃度之蚀刻液。並將該溶液對於表 面具有銀合金（含98%以上之銀，0.9%之鈀及1.0%以上 之銅’依、濺鐘之方法賤鍍於梦基板或玻璃基板表面）之碎 基板與表面具有銀合金及光阻圖樣之矽基板進行蝕刻並測 量蚀刻速率，結果如下表所示。 (請先閲讀背面之注意事項再塡寫本頁各欄) 裝---------訂--------線丨 實施例 氨水 過硫酸鈉 蚀刻速率 (克重） (克重） (A/sec ) 1 10 5 10 2 50 5 50 3 5 5 12 4 30 8 14 5 30 3 28 6 2 2 35 —-_________7 本紙張尺度適用中國國家標準（CNS) A4規格（21〇χ297公釐） A7 ---~~______B7 五、發明説明（5 )V. Description of the Invention ([Field of the Invention] — This issue relates to an etchant composition and an etching method, especially C, an etchant composition and an etching method for a silver alloy. [Background of the Invention] <Semiconductor or planar display device, the metal is used as the second material, but because of the high resistance of the road metal, researchers have been = using the lower resistance of the metal as the material of the chip wire. In the past, It is used as a material for 4 wires, but it has not been widely used because it has no suitable shape to be expanded and formed. Silver alloys with a silver content of more than %%, although the resistance is not as silver or gold = general Low, but its resistance is much lower than chromium metal, and it is still a suitable wafer guide: material 'However, because silver alloy does not have a suitable etching solution, it is not widely used in wafer or panel light processing. Here, based on the spirit of active invention, I am thinking about a "liquid composition for silver alloy and the method of touching" which can solve the above problem. [Overview of the present invention] The main object of the present invention is to provide an etching solution for silver alloys, which can selectively and effectively be used for etching and control of silver alloys with a silver content exceeding δ0% or more. _Rate to form a pattern of silver alloy on the substrate 0 588121 A7 B7 V. Description of the invention (2) In order to achieve the above-mentioned object, the etching solution for silver alloy of the present invention contains: ·· 0 · 1 to 10 parts by weight Sodium sulfate, and 1 to 60 parts by weight of ammonia water; and 30 to 99 parts by weight of water. Another etching solution for silver alloy according to the present invention comprises: 1 to 30 parts by weight of persulfate steel; 1 to 10 parts by weight Parts of sulfuric acid; and 60 to 98 parts by weight of water. Yet another etching solution for silver alloys according to the present invention comprises: 1 to 〇0 parts by weight of persulfate steel, and 0.001 to 0.5 parts by weight Sodium diborate; and 88 to 99 parts by weight of water. 'The etching method of the silver alloy of the present invention includes the following steps: First, a substrate having a silver alloy surface is provided, and the surface of the silver alloy is coated with a layer of Pattern photoresist; and applying a silver alloy etchant to the The surface of the silver alloy of the plate or the substrate with the silver alloy is immersed in the silver alloy etching solution; the remaining liquid of the 4 silver alloy contains: 1 to 30 parts by weight of sodium persulfate. Another silver alloy of the present invention The etching method includes the following steps: first providing a substrate with a silver alloy surface, and the surface of the silver alloy is coated with a layer of photoresist; and coating a silver alloy etching solution on the surface of the silver alloy of the substrate or The silver alloy substrate is immersed in the silver alloy etching solution; wherein the silver alloy etching solution contains 0.1 to 10 parts by weight of sodium persulfate; 1 to 60 parts by weight of ammonia water; and 30 to 99 parts by weight of water. The present invention discloses another method for etching an silver alloy, which includes the following steps: firstly providing a substrate with a silver alloy surface, and the surface of the silver alloy is coated with a layer of photoresist; and applying a silver alloy etching solution Cover the silver surface of the substrate or immerse the substrate with silver alloy in the silver alloy etching solution; (Please read the precautions on the back before filling in the blocks on this page) -Line! $ Paper size 5 A4 size (210 × cloud 7 mm) 588121 A7 Γ _____ Β7 ____ 5. Description of the invention (3) wherein the silver alloy etching solution contains 1 to 30 parts by weight of sodium persulfate; 1 to 10 parts by weight of sulfuric acid; And 60 to 98 parts by weight of water. Another method for etching a silver alloy according to the present invention includes the following steps: first providing a substrate with a silver alloy surface, and the surface of the silver alloy is coated with a patterned photoresist; and coating a silver alloy etching solution Immersed in the silver alloy etching solution on the surface of the silver alloy of the substrate or the substrate with the silver alloy; wherein the silver alloy etching solution contains 1 to 10 parts by weight of sodium persulfate; 0.01 to 0.5 parts by weight of joint two Sodium borate; and 88 to 99 parts by weight of water. Because the composition and method of the present invention are novel, can provide industrial use, and indeed have enhanced efficacy, they have applied for an invention patent in accordance with the law. [Detailed description of the preferred embodiment] The etching solution composition of the present invention mainly comprises: 0.1 · 10 to 10 parts by weight of sodium persulfate, and 1 to 60 parts by weight of ammonia water; and 30 to 99 parts by weight of water. The etching solution composition of the present invention may optionally further include from 0.1 to 5 parts by weight of a weakly alkaline salt or from 1 to 10 parts by weight of an acetate. The weakly testable salts suitable for the present invention are not limited, and are preferably sodium bicarbonate, sodium carbonate, sodium phosphate or sodium oxalate. The type of the acetate is not limited, and ammonium acetate or steel acetate is preferred. The etching solution composition series of the present invention can complete the etching of the silver alloy in another modified series. The composition of the insect solution contains 1 to 30 parts by weight of sodium persulfate; 1 to 10 parts by weight of sulfuric acid; and 6 〇 to ^ 6 This paper size applies to Chinese National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling in the columns on this page) ------ Line--. 588121 Α7 Β7 V. Description of the invention (4) 9 8 parts by weight of water. The etching solution composition series of the present invention can also be used to complete the etching of the silver alloy in a series of another variation, and the etching solution composition further includes 1 to 10 parts by weight of sodium persulfate; 5 parts by weight of sodium diborate; and 88 to 99 parts by weight of water. The silver alloy suitable for the silver alloy etching solution of the present invention is a silver alloy having a silver content of not less than 80%. In order to make your reviewing committee better understand the technical content of the present invention, the preferred embodiments of the etching solution for silver alloy are described below. Examples 1 to 8 A solution of sodium persulfate and ammonia was prepared according to the ratio in the following table, and water was added to 100 g of an etching solution configured to the following concentration. The solution has a broken substrate and a surface having a silver alloy (containing 98% or more of silver, 0.9% of palladium, and 1.0% or more of copper on the surface of a dream substrate or a glass substrate) by a method of splashing a bell. The silver substrate and the silicon substrate of the photoresist pattern were etched and the etching rate was measured. The results are shown in the table below. (Please read the notes on the back before writing the columns on this page) Install --------- Order -------- Line 丨 Example Ammonia Sodium Persulfate Etching Rate (gram weight) ( Gram weight) (A / sec) 1 10 5 10 2 50 5 50 3 5 5 12 4 30 8 14 5 30 3 28 6 2 2 35 —-_________ 7 This paper size applies to China National Standard (CNS) A4 specifications (21〇 χ297 mm) A7 --- ~~ ______ B7 V. Description of the invention (5)
(請先閱讀背面之注意事項再填寫本頁各欄) 其中，經檢視矽基板，矽基板或光阻圖樣並無變化， 矽基板或光阻圖樣並未受蝕刻液影響，蝕刻液僅對於銀合 金進行選擇性之蝕刻。 貫施例 9至1 7 將過硫酸鈉，氨水以及選擇性鹽類，依照下表所示調 並加水至1 〇 〇克配置成下列濃度之蚀刻液。並將該溶 液對於表面具有銀合金（含98 %以上之銀，0·9%之鈀及 1·〇 %以上之銅，依濺鍍之方法濺鍍於矽基板或破璃基板 表面）之矽基板與表面具有銀合金及光阻圖樣之矽基板進 行蚀刻並測量蝕刻速率，結果如下表所，示。 貫施例 氨水 (克重） 過硫酸鈉 (克重） 選擇性 鹽類 餘刻速率 (A/sec) 9 10 5 3克碳酸氫鋼 218 10 10 5 1克碳酸氫鋼 220 11 10 5 0.5克碳酸氫 鋼 136 12 10 5 1克碳酸鈉 240 13 10 5 1克磷酸鋼 540 14 10 5 1克草酸鋼 19 ______8 本紙張尺度適用中國國家標準（CNS) Α4規格（210X297公釐） 588121 A7 B7 、發明説明（ 6 ) 15 10 5 1克醋酸銨 23 16 10 5 1克醋酸鈉 13 17 Ϊ0 5 10克醋酸鈉 138 (請先閲讀背面之注意事項再填寫本頁各攔) 其中，經檢視矽基板，矽基板或光阻圖樣並無變化， 矽基板或光阻圖樣並未受蝕刻液影響，蝕刻液僅對於銀合 金進行選擇性之蚀刻。且由上述數據可知，加入適當之鹽 類可大幅增進蚀刻速率。 ♦ 實施例1 8至2 1 將過硫酸鈉以及硫酸，依照下表所示調配，並加水至 100克配置成下列濃度之蚀刻液。並將該溶液對於表面具 有銀合金（含98 %以上之銀，0.9 %之鈀及1〇%以上之/、 銅’依丨賤鐘之方法滅鍍於碎基板或玻璃基板表面）之碎美 板與表面具有銀合金及光阻圖樣之矽基板進行银刻並測"量 蝕刻速率，結果如下表所示。 ' 實施例 過硫酸鋼 18 20 19 15 20 10 21 5 ______ 588121 A7 B7 五、發明説明（7) 其中’經檢視碎基板，矽基板或光阻圖樣並無變化， 石夕基板或光阻圖樣並未受蚀刻液影響，蚀刻液僅對於銀合 金進行選擇性之蚀刻。 實施例 2 2至2 5 將過硫酸鈉依照下表所示調配，並加水至丨〇 〇克配置 成下列濃度之蚀刻液。並將該溶液對於表面具有銀合金 (含98%以上之銀’ 0.9%之免及1.0%以上之銅，依賤鍍 之方洼:濺鍍於矽基板或玻璃基板表面）之矽基板與表面具 有銀合金及光阻圖樣之矽基板進行蝕刻並測量蚀刻速率， 結果如下表所示。 實施例 過硫酸鈉 蚀刻速率 (克重） (A/sec ) 22 20 45.5 23 15 37.5 24 10 27.8 25 5 18.1 其中，經檢視矽基板，矽基板或光阻圖樣並無變& 矽基板或光阻圖樣並未受蝕刻液影響，蝕刻液僅斜於$ ^ 金進行選擇性之蚀刻。 實施例 2 6 10 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐） -------------釋裝 广請先閱讀背面之注意事項再填寫本頁各欄) —---訂--------線 — · 588121 A7 B7 五、發明説明（8 ) 將過硫酸鈉以及聯二硼酸鈉，依照下表所示調配，並 加水至1 0 0克配置成下列濃度之蚀刻液。並將該溶液對於 表面具有銀合金（含9 8 %以上之銀’ 〇 · 9 %之兔及1 · 〇 %以 上之銅，依濺鍍之方法濺鍍於矽基板或玻璃基板表面）之 矽基板與表面具有銀合金及光阻圖樣之矽基板進行餘刻。 實施例 26 過硫酸鈉 7 聯二硼酸鈉 • 3 其中’經檢視矽基板，矽基板或光阻圖樣並無變化， 石夕基板或光阻圖樣並未受蝕刻液影響，蝕刻液僅對於銀合 金進行選擇性之蚀刻。 由上之數據可知，本發明之蝕刻液可以有效地且選擇 性地對銀合金進行蝕刻，對基板並無影響或影響甚微，可 以藉由時間之控制以及濃度之選擇，控制對銀合金蝕刻之 程度以及速率，其可以結合黃光製程，以形成圖樣 (pattern)，應用於微機電，晶片或面板基板（諸如功 能性元件以及線路等）之製造。 综上所陳，本發明無論就目的、手段及功效，在在均 顯示其迥異於習知技術之特徵，為「銀合金用蝕刻液」之 一大突破，懇請貴審查委員明察，早曰賜准專利，俾嘉 惠社會’實感德便。惟應注意的是，上述諸多實施例僅係(Please read the precautions on the back before filling in the columns on this page.) Among them, the silicon substrate, the silicon substrate or the photoresist pattern have not changed after inspection. The silicon substrate or photoresist pattern is not affected by the etching solution. The alloy is selectively etched. Examples 9 to 17 The sodium persulfate, ammonia, and selective salts were adjusted as shown in the table below, and water was added to 1000 g to configure an etching solution with the following concentration. And the solution for silicon with a silver alloy on the surface (containing 98% or more of silver, 0.9% of palladium and 1.0% or more of copper, is sputtered on the surface of a silicon substrate or a broken glass substrate according to a sputtering method) The substrate and a silicon substrate having a silver alloy and a photoresist pattern on the surface were etched and the etching rate was measured. The results are shown in the following table. Example: Ammonia (gram weight) Sodium persulfate (gram weight) Selective salt residual rate (A / sec) 9 10 5 3 g hydrogen carbonate steel 218 10 10 5 1 g hydrogen carbonate steel 220 11 10 5 0.5 g Bicarbonate steel 136 12 10 5 1 gram of sodium carbonate 240 13 10 5 1 gram of phosphate steel 540 14 10 5 1 gram of oxalate steel 19 ______8 This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) 588121 A7 B7, Description of the invention (6) 15 10 5 1g of ammonium acetate 23 16 10 5 1g of sodium acetate 13 17 Ϊ0 5 10g of sodium acetate 138 (Please read the precautions on the back before filling in the blocks on this page) Among them, the silicon substrate after inspection There is no change in the silicon substrate or photoresist pattern. The silicon substrate or photoresist pattern is not affected by the etching solution, and the etching solution only selectively etches the silver alloy. And from the above data, it can be known that the addition of appropriate salts can greatly increase the etching rate. ♦ Examples 1 8 to 2 1 Prepare sodium persulfate and sulfuric acid according to the following table, and add water to 100 g of the etching solution with the following concentration. And the solution has a broken alloy with a surface of a silver alloy (containing 98% or more of silver, 0.9% of palladium and 10% or more of / copper) on the surface of broken substrates or glass substrates in accordance with the method of cheap bells. The plate and a silicon substrate with a silver alloy and a photoresist pattern on the surface were etched with silver and the "etch rate" was measured. The results are shown in the table below. '' Example persulfate steel 18 20 19 15 20 10 21 5 ______ 588121 A7 B7 V. Description of the invention (7) Among them, 'Broken substrate, silicon substrate or photoresist pattern have not changed. Unaffected by the etchant, the etchant performs selective etching of silver alloys only. Example 2 2 to 25 5 Sodium persulfate was prepared as shown in the table below, and water was added to 1000 g of an etching solution of the following concentration. And the solution for silicon substrates and surfaces with a silver alloy on the surface (containing 98% or more of silver '0.9% exemption and 1.0% or more copper, according to the base plating method: sputtering on the surface of a silicon substrate or a glass substrate) The silicon substrate with a silver alloy and a photoresist pattern was etched and the etching rate was measured. The results are shown in the following table. Example Persulfate Etching Rate (gram weight) (A / sec) 22 20 45.5 23 15 37.5 24 10 27.8 25 5 18.1 Among them, there is no change in the silicon substrate, the silicon substrate or the photoresist pattern & the silicon substrate or the light The resist pattern is not affected by the etchant, and the etchant is only slanted at $ ^ gold for selective etching. Example 2 6 10 This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) ------------- Please read the precautions on the back before filling in each page on this page Column) —--- Order -------- Line — · 588121 A7 B7 V. Description of the invention (8) Mix sodium persulfate and sodium diborate according to the table below, and add water to 10 0 g of the etching solution is arranged in the following concentration. And the solution is silicon-coated with a silver alloy (containing 98% or more silver '0.9% rabbits and 1.0% or more copper on the surface of a silicon substrate or a glass substrate according to a sputtering method). The substrate and the silicon substrate with a silver alloy and a photoresist pattern on the surface are etched. Example 26 Sodium persulfate 7 Sodium diborate • 3 Among them, the silicon substrate, the silicon substrate, or the photoresist pattern did not change after inspection. The Shixi substrate or photoresist pattern was not affected by the etching solution, and the etching solution was only for silver alloys. Selective etching is performed. It can be known from the above data that the etching solution of the present invention can effectively and selectively etch silver alloys, and has no or little effect on the substrate. The silver alloy etching can be controlled by time control and concentration selection. The degree and speed can be combined with the yellow light process to form a pattern, which is applied to the manufacture of micro-electro-mechanical, wafer or panel substrates (such as functional elements and circuits). In summary, the present invention, regardless of its purpose, means and efficacy, shows its characteristics that are quite different from the conventional technology. It is a major breakthrough in "etching solutions for silver alloys". Your reviewers are kindly requested to make a clear observation, and I would like to give them A quasi-patent, "Jiahui Society" has a real sense of virtue. It should be noted that many of the above embodiments are only
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588121 A7 _B7_ 五、發明説明（9 ) 為了便於説明而舉例而已，本發明所主張之權利範圍自應 以申請專利範圍所述為準，而非僅限於上述實施例。 2 11 (請先閱讀背面之注意事項再填寫本頁各欄) 裝 -----訂-------線— . 本紙張尺度適用中國國家票準（CNS) Α4規格（210X297公釐）588121 A7 _B7_ V. Description of the invention (9) For convenience of illustration, the scope of the rights claimed by the present invention shall be based on the scope of the patent application, and not limited to the above embodiments. 2 11 (Please read the precautions on the back before filling out the columns on this page) Binding ----- Order ------- Line —. This paper size applies to China National Ticket Standard (CNS) Α4 specification (210X297) %)