TW201839175A - Etching liquid composition and etching method - Google Patents
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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Abstract
Description
本發明係關於蝕刻液組成物、及使用其的蝕刻方法。更詳言之,係關於用於對Fe-Ni36%等恆範鋼材、或不鏽鋼等含鎳層施行蝕刻的蝕刻液組成物、及使用其的蝕刻方法。 The present invention relates to an etching liquid composition and an etching method using the same. More specifically, it relates to an etching liquid composition for etching a nickel-containing layer such as a constant-state steel such as Fe-Ni 36% or stainless steel, and an etching method using the same.
含鎳層係利用於例如:印刷佈線板、引線框架、TAB、BGA等精密電子零件、以及遮罩等高精細顯示器用零件等。而且,用於對含鎳層施行微細加工的技術,已知有如濕式蝕刻技術。 The nickel-containing layer is used for, for example, a printed wiring board, a lead frame, a precision electronic component such as TAB or BGA, and a high-definition display component such as a mask. Further, as a technique for performing microfabrication on a nickel-containing layer, a wet etching technique is known.
例如專利文獻1所揭示的蝕刻液,係可提升與樹脂等被黏材料間之密接性的不鏽鋼用蝕刻液,其含有:酸、鐵離子、鹵化物離子、兩性界面活性劑、及特定金屬離子。 For example, the etching liquid disclosed in Patent Document 1 is an etching liquid for stainless steel which can improve adhesion to a material such as a resin, and contains an acid, an iron ion, a halide ion, an amphoteric surfactant, and a specific metal ion. .
再者,專利文獻2所揭示的蝕刻液,係恆範鋼合金用蝕刻液,含有:氯化銅(II)或氯化鐵、鹽酸、聚乙二醇衍生物、以及例如蠟、防鏽油等親油性烴類。 Further, the etching liquid disclosed in Patent Document 2 is an etching liquid for a constant-van steel alloy, and contains: copper (II) chloride or ferric chloride, hydrochloric acid, a polyethylene glycol derivative, and, for example, a wax, an antirust oil. And other lipophilic hydrocarbons.
[專利文獻1]日本專利特開2017-014607號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2017-014607
[專利文獻2]日本專利特開2004-238666號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2004-238666
然而,若使用專利文獻1與2所揭示的蝕刻液,藉由蝕刻在Fe-Ni36%層、含鎳的不鏽鋼層上形成貫通孔,有貫通孔壁面不平滑的問題。又,在使用上述蝕刻液,藉由蝕刻在Fe-Ni36%層與銅層的積層體、或不鏽鋼層與銅層的積層體上形成貫通孔時,亦同樣地有貫通孔壁面平滑的問題。 However, when the etching liquids disclosed in Patent Documents 1 and 2 are used, a through hole is formed in the Fe-Ni 36% layer and the nickel-containing stainless steel layer by etching, and there is a problem that the through hole wall surface is not smooth. Further, when the through hole is formed by etching the layered body of the Fe-Ni 36% layer and the copper layer or the layered body of the stainless steel layer and the copper layer by using the etching liquid, the through hole wall surface is also smooth.
再者,Fe-Ni36%層與銅層的蝕刻速度迥異。所以,與基板表面平行方向的Fe-Ni36%層之蝕刻寬度、與銅層之蝕刻寬度的差異擴大,在Fe-Ni36%層與銅層間容易發生較大的梯度差。又,於不鏽鋼層與銅層的積層體的情況,亦同樣地因蝕刻速度差異,導致不鏽鋼層之蝕刻寬度、與銅層之蝕刻寬度間的差異擴大,於二層間容易發生較大的梯度差。 Furthermore, the etching rate of the Fe-Ni 36% layer and the copper layer is different. Therefore, the difference between the etching width of the Fe-Ni 36% layer in the direction parallel to the substrate surface and the etching width of the copper layer is widened, and a large gradient difference tends to occur between the Fe-Ni 36% layer and the copper layer. Further, in the case of the laminated body of the stainless steel layer and the copper layer, the difference between the etching width of the stainless steel layer and the etching width of the copper layer is enlarged due to the difference in the etching rate, and a large gradient difference easily occurs between the two layers. .
所以,本發明係為了解決上述問題而完成,其課題在於提供一種用於對含鎳層施行蝕刻的蝕刻液組成物,可使蝕刻後的層表面平滑,且即使統括式對含鎳層與金屬系層的積層體施行蝕刻時,在二層間仍不易發生較大梯度差。又,本發明課題在於提供:使用上述蝕刻液組成物的蝕刻方法。 Therefore, the present invention has been made to solve the above problems, and an object thereof is to provide an etching liquid composition for etching a nickel-containing layer, which can smooth the surface of the layer after etching, and even if the nickel layer and the metal layer are integrated When the layered body of the layer is etched, a large gradient difference is unlikely to occur between the two layers. Further, an object of the present invention is to provide an etching method using the above etching liquid composition.
本發明人等為解決上述問題經深入鑽研,結果發現含有鐵離子成分、氯化氫、以及從5-胺基四唑、苯并噻唑、及苯并三唑所構成群組中選擇至少1種化合物的水溶液之蝕刻液組成物,可解決上述問題,遂完成本發明。 The present inventors have intensively studied to solve the above problems, and as a result, found that iron ion component, hydrogen chloride, and at least one compound selected from the group consisting of 5-aminotetrazole, benzothiazole, and benzotriazole are selected. The etchant composition of the aqueous solution can solve the above problems and complete the present invention.
即,根據本發明所提供的蝕刻液組成物,係用於對含鎳層施行蝕刻的蝕刻液組成物,其含有:(A)鐵離子成分依鐵離子濃度換算計為0.1~20質量%;(B)氯化氫0.01~20質量%;以及(C)從5-胺基四唑、苯并噻唑及苯并三唑所構成群組中選擇之至少1種化合物0.01~5質量%;的水溶液之蝕刻液組成物。 That is, the etching liquid composition according to the present invention is an etching liquid composition for etching a nickel-containing layer, wherein: (A) the iron ion component is 0.1 to 20% by mass in terms of iron ion concentration; (B) hydrogen chloride 0.01 to 20% by mass; and (C) at least one compound selected from the group consisting of 5-aminotetrazole, benzothiazole and benzotriazole, 0.01 to 5% by mass; Etching liquid composition.
再者,根據本發明所提供的蝕刻方法(第1蝕刻方法),係包括有:使用上述蝕刻液組成物,對基體上所配設的含鎳層施行蝕刻之步驟。 Further, the etching method (first etching method) according to the present invention includes the step of etching the nickel-containing layer provided on the substrate by using the etching liquid composition.
再者,根據本發明所提供的蝕刻方法(第2蝕刻方法),係包括有:使用上述蝕刻液組成物,統括地對基體上所配設之含有含鎳層與金屬系層的積層體施行蝕刻的步驟。 Furthermore, the etching method (second etching method) according to the present invention includes: using the etching liquid composition described above, and integrally performing a laminate including a nickel-containing layer and a metal-based layer disposed on the substrate The step of etching.
根據本發明可提供用於供對含鎳層施行蝕刻用的蝕刻液組成物,其能使蝕刻後的層表面平滑,且即使統括式對含鎳層與金屬系 層的積層體施行蝕刻時,在二層間仍不易發生較大梯度差。又,根據本發明可提供使用上述蝕刻液組成物的蝕刻方法。 According to the present invention, there can be provided an etching liquid composition for etching a nickel-containing layer, which can smooth the surface of the layer after etching, and even if the laminated body of the nickel-containing layer and the metal-based layer is etched in an integrated manner, Large gradient differences are still less likely to occur between the two layers. Further, according to the present invention, an etching method using the above etching liquid composition can be provided.
以下,針對本發明實施形態進行具體說明。本說明書的「含鎳層」若為含有鎳的層則無特別的限定。「含鎳層」係可舉例如:鎳;氧化鎳;Fe-Ni36%、Fe-Ni32%-Co5%、Fe-Ni29%-Co17%、Fe-Ni42%-Cr-Ti、Ni-Mo28%-Fe2%等通稱恆範鋼材的合金;SUS304、SUS304L、SUS321、SUS347、SUS316、SUS317、SUS890、NSSC170、NSSC270、SUS316N、NSSC316、SUS309S、SUS310S、AISI314、NSSC731、SUS304-M、SUS304-S、SUS-304J3、SUSXM7、SUS305、SUS305J1、NSSC130M、NSSC131、SUS201、SUS302、SUS304N1、SUS304-H、SUS631J1、SUS303、SUS316F、SUS303Cu、NSSC140、SUS304-P、SUS304J3-P、SUS316-P、SUS316L-P、SUS304-HP、NSSC550、SUS329J1、NSSCDX1、SUS630、SUS631J1等不鏽鋼等等。成為本發明蝕刻液組成物之被蝕刻體的含鎳層,較佳係上述恆範鋼材、不鏽鋼。 Hereinafter, embodiments of the present invention will be specifically described. The "nickel-containing layer" in the present specification is not particularly limited as long as it is a layer containing nickel. The "nickel-containing layer" may be, for example, nickel; nickel oxide; Fe-Ni 36%, Fe-Ni 32%-Co 5%, Fe-Ni 29%-Co 17%, Fe-Ni 42%-Cr-Ti, Ni-Mo 28%- Fe2% and other alloys known as Hengfan Steel; SUS304, SUS304L, SUS321, SUS347, SUS316, SUS317, SUS890, NSSC170, NSSC270, SUS316N, NSSC316, SUS309S, SUS310S, AISI314, NSSC731, SUS304-M, SUS304-S, SUS- 304J3, SUSXM7, SUS305, SUS305J1, NSSC130M, NSSC131, SUS201, SUS302, SUS304N1, SUS304-H, SUS631J1, SUS303, SUS316F, SUS303Cu, NSSC140, SUS304-P, SUS304J3-P, SUS316-P, SUS316L-P, SUS304- Stainless steel such as HP, NSSC550, SUS329J1, NSSCDX1, SUS630, SUS631J1, etc. The nickel-containing layer which is the object to be etched of the etching liquid composition of the present invention is preferably the above-mentioned constant-van steel material or stainless steel.
本說明書所謂「蝕刻」係指利用化學藥物等的腐蝕作用所施行之塑形或表面加工技法。本發明蝕刻液組成物的具體用途係可舉例如:去除劑、表面平滑劑、表面粗化劑、圖案形成用藥劑、基體上微量附著成分的洗淨液等。本發明蝕刻液組成物若使用於具三維構 造之微細形狀圖案的形成,可獲得矩形等所需形狀的圖案,故適合用為圖案形成用藥劑。又,若將本發明蝕刻液組成物使用為在例如含鎳層、或含鎳層與金屬系層的積層體等形成貫通孔的蝕刻劑,可使處理後的層表面平滑,且構成積層體的雙層間不易出現較大的梯度差,所以亦適合用為貫通孔形成用藥劑。 The term "etching" as used herein refers to a shaping or surface processing technique performed by the corrosive action of a chemical or the like. Specific examples of the composition of the etching liquid composition of the present invention include a remover, a surface smoothing agent, a surface roughening agent, a pattern forming agent, and a cleaning solution for a trace amount of a component on a substrate. When the etching liquid composition of the present invention is used for forming a fine-shaped pattern having a three-dimensional structure, a pattern having a desired shape such as a rectangle can be obtained, and therefore it is suitably used as a medicine for pattern formation. Further, when the etching liquid composition of the present invention is used as an etchant for forming a through hole in, for example, a nickel-containing layer or a laminate of a nickel-containing layer and a metal-based layer, the surface of the layer after the treatment can be made smooth, and a laminated body can be formed. Since the double layer is less likely to have a large gradient difference, it is also suitable as a through hole forming agent.
本說明書的「金屬系層」若為由鎳以外的金屬所構成層則無特別的限定。「金屬系層」係由例如:銅、鈦、鉻、銀、鉬、鋁、白金、及鈀等金屬層;含有從銅、鈦、鉻、銀、鉬、鋁、白金、及鈀所構成群組中選擇2種類以上金屬的合金層(例如Ag-Pd-Cu等);中選擇1種以上所構成之層的總稱。 The "metal layer" in the present specification is not particularly limited as long as it is a layer composed of a metal other than nickel. The "metal layer" is a metal layer such as copper, titanium, chromium, silver, molybdenum, aluminum, platinum, or palladium; and contains a group consisting of copper, titanium, chromium, silver, molybdenum, aluminum, platinum, and palladium. In the group, an alloy layer of two or more kinds of metals (for example, Ag-Pd-Cu or the like) is selected, and a general term for one or more layers is selected.
本說明書的「銅系層」若為含有銅的層則無特別的限定。「銅系層」係從:銅;以及銅、與鋅、鉛、錫及鋁等中之1種以上金屬組合的銅合金;之中選擇至少1種所構成之層的總稱。「銅系層」具體例係可舉例如含有銅10質量%以上的導電層。 The "copper-based layer" in the present specification is not particularly limited as long as it is a layer containing copper. The "copper-based layer" is a copper alloy in which copper is combined with one or more metals selected from the group consisting of zinc, lead, tin, and aluminum, and a layer of at least one of the layers is selected. Specific examples of the "copper-based layer" include a conductive layer containing 10% by mass or more of copper.
本發明蝕刻液組成物係含有(A)鐵離子成分(以下亦稱「(A)成分」)。該(A)成分係構成蝕刻液組成物主劑的成分。鐵離子成分若為能將鐵離子供應給蝕刻液組成物(或使生成鐵離子)的化合物即可,其餘並無特別的限定。鐵離子成分係可舉例如:氯化鐵(III)、溴化鐵(III)、碘化鐵(III)、硫酸鐵(III)、硝酸鐵(III)、醋酸鐵(III)等。該等鐵離子成分係可為無水物、亦可為水合物。又,該等鐵離子成分亦可併用2種以上。(A)成分較佳係使用氯化鐵(III)。 The etching liquid composition of the present invention contains (A) an iron ion component (hereinafter also referred to as "(A) component"). The component (A) is a component constituting the main component of the etching liquid composition. The iron ion component is not particularly limited as long as it can supply iron ions to the etching liquid composition (or to form iron ions). Examples of the iron ion component include iron (III) chloride, iron (III) bromide, iron (III) iodide, iron (III) sulfate, iron (III) nitrate, and iron (III) acetate. These iron ion components may be anhydrate or a hydrate. Further, these iron ion components may be used in combination of two or more kinds. The component (A) is preferably iron (III) chloride.
蝕刻液組成物中的(A)成分濃度係依鐵離子濃度換算計為0.1~20質量%、較佳1~15質量%。(A)成分的濃度係可依照屬於被蝕刻材的含鎳層等之厚度與寬度再行適當調節。若(A)成分的濃度依鐵離子濃度換算計未滿0.1質量%,則蝕刻速度過慢,生產性降低。另一方面,若(A)成分的濃度依鐵離子濃度換算計超過20質量%,則蝕刻速度過快,較難控制蝕刻速度。 The concentration of the component (A) in the etching liquid composition is 0.1 to 20% by mass, preferably 1 to 15% by mass, in terms of iron ion concentration. The concentration of the component (A) can be appropriately adjusted in accordance with the thickness and width of the nickel-containing layer or the like belonging to the material to be etched. When the concentration of the component (A) is less than 0.1% by mass in terms of the concentration of the iron ion, the etching rate is too slow and the productivity is lowered. On the other hand, when the concentration of the component (A) exceeds 20% by mass in terms of the iron ion concentration, the etching rate is too fast, and it is difficult to control the etching rate.
本發明的蝕刻液組成物係含有(B)氯化氫(以下亦稱「(B)成分」)。該(B)成分係構成蝕刻液組成物主劑的成分。蝕刻液組成物中的(B)成分濃度係0.01~20質量%、較佳係0.1~15質量%。(B)成分的濃度係可依照屬於被蝕刻材的含鎳層等之厚度與寬度再行適當調節。若(B)成分濃度未滿0.01質量%,則蝕刻速度過慢。另一方面,即使(B)成分的濃度超過20質量%,仍無法再提升蝕刻速度,反而有發生裝置構件腐蝕等不良情況的可能性。 The etching liquid composition of the present invention contains (B) hydrogen chloride (hereinafter also referred to as "(B) component"). The component (B) is a component constituting the main component of the etching liquid composition. The concentration of the component (B) in the etching liquid composition is 0.01 to 20% by mass, preferably 0.1 to 15% by mass. The concentration of the component (B) can be appropriately adjusted in accordance with the thickness and width of the nickel-containing layer or the like belonging to the material to be etched. If the concentration of the component (B) is less than 0.01% by mass, the etching rate is too slow. On the other hand, even if the concentration of the component (B) exceeds 20% by mass, the etching rate cannot be increased any more, and there is a possibility that problems such as corrosion of the device member may occur.
本發明的蝕刻液組成物係含有:(C)從5-胺基四唑、苯并噻唑、及苯并三唑所構成群組中選擇至少1種的化合物(以下亦稱「(C)成分」)。藉由該(C)成分、與(A)成分及(B)成分組合使用,可使蝕刻後的含鎳層表面平滑,且即使統括地對含鎳層與金屬系層的積層體施行蝕刻時,仍可抑制二層間發生較大梯度差。又,藉由將(C)成分、與(A)成分及(B)成分組合使用,當統括對含鎳層與金屬系層的積層體施行蝕刻而形成貫通孔時,可使經處理後的層表面平滑,且可抑制二層間發生較大梯度差之情形。 The etching liquid composition of the present invention contains: (C) at least one compound selected from the group consisting of 5-aminotetrazole, benzothiazole, and benzotriazole (hereinafter also referred to as "(C) component) "). By using the component (C) in combination with the component (A) and the component (B), the surface of the nickel-containing layer after etching can be smoothed, and even if the laminate of the nickel-containing layer and the metal layer is collectively etched. It can still suppress large gradient differences between the two layers. Further, by using the component (C) in combination with the component (A) and the component (B), when the laminate of the nickel-containing layer and the metal layer is collectively etched to form a through-hole, the treated layer can be processed. The layer surface is smooth and can suppress a large gradient difference between the two layers.
(C)成分較佳係使用苯并噻唑及苯并三唑中之至少任一者。若將苯并噻唑及苯并三唑之至少任一者使用為(C)成分,當統括對含鎳層與金屬系層的積層體施行蝕刻而形成貫通孔時,可使經處理後的層表面更平滑,且能更加縮小二層間所發生的梯度差。 The component (C) is preferably at least any one of benzothiazole and benzotriazole. When at least one of benzothiazole and benzotriazole is used as the component (C), when the laminated body including the nickel-containing layer and the metal-based layer is collectively etched to form a through-hole, the treated layer can be formed. The surface is smoother and the gradient difference between the two layers can be further reduced.
蝕刻液組成物中的(C)成分濃度係0.01~5質量%、較佳係0.1~2質量%。(C)成分的濃度係可依照屬於被蝕刻材的含鎳層等之厚度與寬度再行適當調節。若(C)成分的濃度未滿0.01質量%,則無法顯現出(C)成分的摻合效果。另一方面,即使(C)成分的濃度超過5質量%,(C)成分的摻合效果仍不再提升。 The concentration of the component (C) in the etching liquid composition is 0.01 to 5% by mass, preferably 0.1 to 2% by mass. The concentration of the component (C) can be appropriately adjusted in accordance with the thickness and width of the nickel-containing layer or the like belonging to the material to be etched. When the concentration of the component (C) is less than 0.01% by mass, the blending effect of the component (C) cannot be exhibited. On the other hand, even if the concentration of the component (C) exceeds 5% by mass, the blending effect of the component (C) is not improved.
本發明的蝕刻液組成物係由各成分溶解於水中的水溶液。所以,本發明的蝕刻液組成物係含有水作為溶劑。蝕刻液組成物中的水量係配合(A)成分、(B)成分及(C)成分的各濃度,設為其剩餘部。另外,當使後述添加劑等含於蝕刻液組成物時,係配合(A)成分、(B)成分、(C)成分及添加劑等的濃度,設為其剩餘部。蝕刻液組成物中的水含有量係只要設為55~99質量%左右即可。 The etching liquid composition of the present invention is an aqueous solution in which each component is dissolved in water. Therefore, the etching liquid composition of the present invention contains water as a solvent. The amount of water in the etching liquid composition is set to the remaining portions of the components (A), (B), and (C). In addition, when an additive or the like described later is contained in the etching liquid composition, the concentration of the component (A), the component (B), the component (C), the additive, and the like is added to the remaining portion. The water content in the etching liquid composition may be set to about 55 to 99% by mass.
本發明的蝕刻液組成物中,作為(A)成分、(B)成分、(C)成分及水以外的其他成分,係在不致阻礙本發明效果之範圍內,亦可摻合周知添加劑。添加劑係可舉例如:蝕刻液組成物的安定化劑、各成分的可溶化劑、消泡劑、pH調節劑、比重調節劑、黏度調節劑、濕潤性改善劑、螯合劑、氧化劑、還原劑、界面活性劑等。該等添 加劑的濃度一般分別在0.001~10質量%範圍內。 In the etching liquid composition of the present invention, as the component (A), the component (B), the component (C), and other components other than water, a known additive may be blended in a range that does not impair the effects of the present invention. Examples of the additive include a stabilizer for an etching liquid composition, a solubilizing agent for each component, an antifoaming agent, a pH adjuster, a specific gravity adjusting agent, a viscosity adjusting agent, a wettability improving agent, a chelating agent, an oxidizing agent, and a reducing agent. , surfactants, etc. The concentration of these additives is generally in the range of 0.001 to 10% by mass, respectively.
上述添加劑中,界面活性劑較佳係使用聚醚化合物。藉由將聚醚化合物使用為界面活性劑並摻合於蝕刻液組成物中,可使經蝕刻處理後的層表面平滑之效果更加提升。聚醚化合物較佳係使用於主鏈構造中含有氮原子的聚醚多元醇化合物。藉由將此種聚醚多元醇化合物摻合於蝕刻液組成物中,特別可提升使經蝕刻處理後的層表面平滑之效果。上述聚醚多元醇化合物的分子量或數量平均分子量較佳係100~5,000。於主鏈構造中含有氮原子的聚醚多元醇化合物之市售物,係可舉例如以下商品名:ADEKA聚醚BM-34、BM-42、BM-54、BM-402(以上均為ADEKA公司製);SBU-Polyol 0476、0870、H309、H463(以上均為住友拜耳聚氨酯公司製)等。 Among the above additives, the surfactant is preferably a polyether compound. By using the polyether compound as a surfactant and blending it into the etching liquid composition, the effect of smoothing the surface of the layer after etching can be further enhanced. The polyether compound is preferably used in a polyether polyol compound containing a nitrogen atom in a main chain structure. By blending such a polyether polyol compound into the etching liquid composition, the effect of smoothing the surface of the layer after the etching treatment can be particularly enhanced. The molecular weight or number average molecular weight of the above polyether polyol compound is preferably from 100 to 5,000. Commercial products of a polyether polyol compound containing a nitrogen atom in the main chain structure include, for example, the following product names: ADEKA polyether BM-34, BM-42, BM-54, BM-402 (all of which are ADEKA) Company system); SBU-Polyol 0476, 0870, H309, H463 (all of which are manufactured by Sumitomo Bayer Polyurethane Co., Ltd.).
蝕刻速度較快時,較佳係使用還原劑作為添加劑。還原劑的具體例係可舉例如:氯化銅、氯化亞鐵、銅粉、銀粉等。該等還原劑的濃度一般係0.01~10質量%範圍。 When the etching rate is fast, it is preferred to use a reducing agent as an additive. Specific examples of the reducing agent include copper chloride, ferrous chloride, copper powder, silver powder, and the like. The concentration of the reducing agents is generally in the range of 0.01 to 10% by mass.
本發明蝕刻液組成物的比重通常係在1.05~1.30範圍內、較佳係在1.1~1.2範圍內。本說明書所謂蝕刻液組成物的「比重」,係指利用周知一般的比重測定方法所測定之比重。具體而言,相對於壓力101325Pa下的4℃水質量,同體積的50℃蝕刻液組成物之質量的比(蝕刻液組成物質量/水質量)即為蝕刻液組成物的比重。比重的測定方法係可採用例如:使用浮秤等比重計的方法;使用固有振動周期測定式之振動式密度比重測定用裝置(例如商品名「DA-650」 (京都電子公司製)等)的方法。 The specific gravity of the composition of the etching solution of the present invention is usually in the range of 1.05 to 1.30, preferably in the range of 1.1 to 1.2. The "specific gravity" of the etching liquid composition in the present specification means the specific gravity measured by a known specific gravity measuring method. Specifically, the ratio of the mass of the 50 ° C etching liquid composition (the etching liquid composition mass/water mass) of the same volume of the 4 ° C water mass at a pressure of 101,325 Pa is the specific gravity of the etching liquid composition. For the method of measuring the specific gravity, for example, a method using a hydrometer such as a floating scale or a vibrating density specific gravity measuring device (for example, a product name "DA-650" (manufactured by Kyoto Electronics Co., Ltd.)) method.
本發明第1蝕刻方法係包括有:使用上述蝕刻液組成物,對基體上所配設的含鎳層施行蝕刻之步驟。又,本發明第2蝕刻方法係包括有:使用上述蝕刻液組成物,統括對基體上所配設之含有含鎳層與金屬系層的積層體施行蝕刻的步驟。 The first etching method of the present invention includes the step of etching the nickel-containing layer provided on the substrate by using the etching liquid composition. Further, the second etching method of the present invention includes the step of etching the layered body containing the nickel-containing layer and the metal-based layer disposed on the substrate by using the etching liquid composition.
若使用本發明的蝕刻液組成物,可統括地對含有含鎳層與金屬系層的積層體施行蝕刻。在基體上所配設的含鎳層係可為單層、亦可為2層以上的積層體。又,構成在基體上所配設積層體的含鎳層與金屬系層,分別可為單層、亦可為2層以上。在基體上所配設的積層體係可將金屬系層配置於含鎳層的上層、亦可配置於下層、亦可上層與下層均有配置。又,亦可由含鎳層與金屬系層交錯積層。又,根據本發明的蝕刻方法,藉由統括地對含有含鎳層與金屬系層的積層體施行蝕刻,可形成貫通孔。在形成此種貫通孔時,較佳的含鎳層係前述恆範鋼材、不鏽鋼,而較佳的金屬系層係前述銅系層。 When the etching liquid composition of the present invention is used, the laminate containing the nickel-containing layer and the metal-based layer can be collectively etched. The nickel-containing layer disposed on the substrate may be a single layer or a laminate of two or more layers. Further, the nickel-containing layer and the metal-based layer which are provided on the substrate and which are provided with the laminate may be a single layer or two or more layers. The layered system disposed on the substrate may be disposed on the upper layer of the nickel-containing layer, or may be disposed on the lower layer, or may be disposed on both the upper layer and the lower layer. Further, a nickel-containing layer and a metal-based layer may be alternately laminated. Further, according to the etching method of the present invention, the laminated body including the nickel-containing layer and the metal-based layer is collectively etched to form a through hole. When such a through hole is formed, a preferred nickel-containing layer is the above-described constant-van steel and stainless steel, and a preferred metal-based layer is the copper-based layer.
對在基體上所配設之含鎳層施行蝕刻的方法、以及統括地對在基體上所配設之含有含鎳層與金屬系層的積層體施行蝕刻之方法,並無特別的限定,可採取一般的蝕刻方法。例如利用浸漬式、噴霧式、旋轉式等施行的蝕刻方法。又,可依例如:批次式、流動式、以及利用蝕刻劑的氧化還原電位、比重、或酸濃度進行的自動控制式等一般方式使用蝕刻液組成物。 The method of etching the nickel-containing layer disposed on the substrate and the method of etching the layered body including the nickel-containing layer and the metal-based layer disposed on the substrate are not particularly limited. Take a general etching method. For example, an etching method performed by an immersion type, a spray type, a rotary type or the like is used. Further, the etching liquid composition can be used in a general manner such as a batch type, a flow type, and an automatic control type using an oxidation-reduction potential, a specific gravity, or an acid concentration of an etchant.
例如當利用噴霧式蝕刻方法,對在聚醯亞胺基板上配設有由銅層/Fe-Ni36%層/銅層所構成積層體的基材施行蝕刻時,藉由將蝕刻液組成物依適當條件朝基材施行噴霧,可對聚醯亞胺基板上的積層體施行蝕刻。又,藉由使用光罩亦可形成所需圖案。 For example, when a substrate having a laminate of a copper layer/Fe-Ni 36% layer/copper layer is disposed on a polyimide substrate by a spray etching method, the etching liquid composition is used. The laminate on the polyimide substrate can be etched by spraying the substrate under appropriate conditions. Also, a desired pattern can be formed by using a photomask.
蝕刻條件並無特別的限定,只要配合被蝕刻體的形狀、膜厚等再行任意設定即可。例如噴霧條件可從0.01~1.0MPa範圍中選擇、較佳係0.1~0.5MPa範圍、更佳係0.15~0.4MPa範圍。又,利用噴霧法形成貫通孔時,例如藉由依噴霧壓0.15~0.4MPa範圍施行蝕刻液組成物的噴霧,可形成壁面更平滑的貫通孔,故較佳。 The etching conditions are not particularly limited, and may be arbitrarily set in accordance with the shape and film thickness of the object to be etched. For example, the spray condition may be selected from the range of 0.01 to 1.0 MPa, preferably in the range of 0.1 to 0.5 MPa, and more preferably in the range of 0.15 to 0.4 MPa. Further, when the through hole is formed by the spray method, for example, by spraying the etching liquid composition in a spray pressure of 0.15 to 0.4 MPa, a through hole having a smoother wall surface can be formed, which is preferable.
蝕刻溫度較佳係設為10~80℃、更佳係設為20~70℃。蝕刻液組成物的溫度因反應熱而上升。所以,視需要為了使蝕刻液組成物的溫度能維持於上述範圍內,亦可利用公知手段進行溫度控制。又,蝕刻時間係只要設為能使蝕刻完成的充分時間即可,並無特別的限定。例如若為膜厚50μm左右的被蝕刻材料,則依上述溫度範圍施行30~300秒左右的蝕刻即可。 The etching temperature is preferably set to 10 to 80 ° C, more preferably 20 to 70 ° C. The temperature of the etchant composition rises due to the heat of reaction. Therefore, in order to maintain the temperature of the etching liquid composition within the above range as needed, temperature control can be performed by a known means. Further, the etching time is not particularly limited as long as it is sufficient time for the etching to be completed. For example, if the material to be etched has a thickness of about 50 μm, etching may be performed for about 30 to 300 seconds in the above temperature range.
本發明的蝕刻方法中,為了恢復因重複蝕刻而劣化的蝕刻液組成物性能,最好更進一步包括有在蝕刻液組成物中添加補充液的步驟。例如於上述自動控制式蝕刻方法時,若在蝕刻裝置中預先安裝補充液,可朝蝕刻液組成物添加補充液。補充液係可使用例如:(A)成分、(B)成分、及(C)成分中之至少任一者的水溶液;(C)成分的水溶液等。該等水溶液(補充液)中的各成分濃度係例如設為蝕刻液組 成物中各成分濃度的3~20倍左右即可。又,在補充液中,視需要亦可添加本發明蝕刻液組成物設為必要成分、或依任意成分含有的前述各成分。 In the etching method of the present invention, in order to restore the performance of the etching liquid composition which is deteriorated by repeated etching, it is preferable to further include a step of adding a replenishing liquid to the etching liquid composition. For example, in the above-described automatic control type etching method, if a replenishing liquid is previously attached to the etching apparatus, a replenishing liquid can be added to the etching liquid composition. For the replenishing liquid, for example, an aqueous solution of at least one of the component (A), the component (B), and the component (C); an aqueous solution of the component (C); The concentration of each component in the aqueous solution (supplemental liquid) may be, for example, about 3 to 20 times the concentration of each component in the etching solution composition. Further, in the replenishing liquid, the etchant composition of the present invention may be added as an essential component or the respective components contained in an arbitrary component, as needed.
本發明的蝕刻液組成物及使用該蝕刻液組成物的蝕刻方法,係適合用於對例如:液晶顯示器、電漿顯示器、觸控板、有機EL、太陽電池、照明器具等機器的電極、或佈線施行加工時。 The etching liquid composition of the present invention and an etching method using the etching liquid composition are suitable for use in electrodes such as liquid crystal displays, plasma displays, touch panels, organic ELs, solar cells, lighting fixtures, etc., or When wiring is processed.
以下,利用實施例與比較例,針對本發明進行詳細說明,惟本發明並不因該等而受限定。 Hereinafter, the present invention will be described in detail by way of examples and comparative examples, but the invention is not limited thereto.
將各成分依成為表1所示配方的方式進行混合,獲得實施例組成物No.1~5的蝕刻液組成物(實施例1~5)。另外,依成分合計成為100質量%的方式摻合水。 Each component was mixed so as to have the formulation shown in Table 1, and the etching liquid compositions of Examples Nos. 1 to 5 (Examples 1 to 5) were obtained. Further, water was blended in such a manner that the total amount of the components was 100% by mass.
將各成分依成為表2所示配方的方式進行混合,獲得比較組成物1~7的蝕刻液組成物(比較例1~7)。另外,依成分合計成為100質量%的方式摻合水。 The components were mixed so as to have the formulations shown in Table 2, and the etching liquid compositions of Comparative Compositions 1 to 7 were obtained (Comparative Examples 1 to 7). Further, water was blended in such a manner that the total amount of the components was 100% by mass.
準備在聚醯亞胺基板上,配設有依序積層著銅層A(厚度5μm)、Fe-Ni36%層(厚度40μm)、及銅層B(厚度5μm)之積層體的基材。在該基材的銅層B上,使用負型乾膜光阻形成開口徑(直徑)40~70μm的光阻圖案後,裁剪為40mm×40mm而獲得複數片的測試片。針對所獲得測試片,依50℃、噴霧壓0.2MPa的條件,將實施例組成物No.1~5利用噴霧法施行噴霧而施行蝕刻處理,形成貫通孔。蝕刻處理時間係依各蝕刻液組成物設定為能形成貫通孔的時間。 A substrate in which a laminate of a copper layer A (thickness: 5 μm), a Fe-Ni 36% layer (thickness: 40 μm), and a copper layer B (thickness: 5 μm) was laminated on the polyimide substrate was prepared. On the copper layer B of the substrate, a photoresist pattern having an opening diameter (diameter) of 40 to 70 μm was formed using a negative dry film photoresist, and then cut into 40 mm × 40 mm to obtain a plurality of test pieces. With respect to the obtained test piece, the composition Nos. 1 to 5 were sprayed by a spray method under the conditions of a temperature of 50 ° C and a spray pressure of 0.2 MPa, and an etching treatment was performed to form a through hole. The etching treatment time is set to a time during which the through holes can be formed in accordance with each etching liquid composition.
除了將比較組成物1~7使用為蝕刻液組成物之外,其餘均依照與前述實施例6~10同樣的方法形成貫通孔。 The through holes were formed in the same manner as in the above-described Examples 6 to 10 except that the comparative compositions 1 to 7 were used as the etching liquid composition.
準備在聚醯亞胺基板上,配設有依序積層著銅層C(厚度5μm)與SUS304層(厚度40μm)之積層體的基材。在該基材的SUS304層上,使用負型乾膜光阻形成開口徑(直徑)40~70μm的光阻圖案後,裁剪為40mm×40mm而獲得複數片的測試片。針對所獲得測試片,依50℃、噴霧壓0.2MPa的條件,將實施例組成物No.3利用噴霧法施行噴霧而施行蝕刻處理,形成貫通孔。蝕刻處理時間係設定為能形成貫通孔的時間。 A substrate in which a laminate of a copper layer C (thickness: 5 μm) and a SUS304 layer (thickness: 40 μm) was sequentially laminated on the polyimide substrate was prepared. On the SUS304 layer of the substrate, a photoresist pattern having an opening diameter (diameter) of 40 to 70 μm was formed using a negative dry film photoresist, and then cut into 40 mm × 40 mm to obtain a plurality of test pieces. With respect to the obtained test piece, the example composition No. 3 was sprayed by a spray method under the conditions of 50 ° C and a spray pressure of 0.2 MPa, and an etching treatment was performed to form a through hole. The etching treatment time is set to a time during which the through holes can be formed.
除了將比較組成物1使用為蝕刻液組成物之外,其餘均依照與前述實施例11同樣的方法形成貫通孔。 A through hole was formed in the same manner as in the above-described Example 11, except that the comparative composition 1 was used as an etching liquid composition.
準備在聚醯亞胺基板上,配設有依序積層著銅層D(厚度5μm)及SUS316層(厚度40μm)之積層體的基材。在該基材的SUS316層上,使用負型乾膜光阻形成開口徑(直徑)40~70μm的光阻圖案後,裁剪為40mm×40mm而獲得複數片的測試片。針對所獲得測試片,依50℃、噴霧壓0.2MPa的條件,將實施例組成物No.3利用噴霧 法施行噴霧而施行蝕刻處理,形成貫通孔。蝕刻處理時間係設定為能形成貫通孔的時間。 On the polyimide substrate, a substrate in which a laminate of a copper layer D (thickness: 5 μm) and a SUS316 layer (thickness: 40 μm) was sequentially laminated was prepared. On the SUS316 layer of the substrate, a photoresist pattern having an opening diameter (diameter) of 40 to 70 μm was formed using a negative dry film photoresist, and then cut into 40 mm × 40 mm to obtain a plurality of test pieces. With respect to the obtained test piece, the composition of Example No. 3 was sprayed by a spray method under the conditions of 50 ° C and a spray pressure of 0.2 MPa, and an etching treatment was performed to form a through hole. The etching treatment time is set to a time during which the through holes can be formed.
除了將比較組成物1使用為蝕刻液組成物之外,其餘均依照與前述實施例12同樣的方法形成貫通孔。 A through hole was formed in the same manner as in the above-described Example 12 except that the comparative composition 1 was used as the etching liquid composition.
使用雷射顯微鏡,觀察由實施例6~12及比較例8~16所形成貫通孔的壁面,依照以下所示評價基準施行平滑性的評價。結果如表3所示。 The wall surface of the through-holes formed in Examples 6 to 12 and Comparative Examples 8 to 16 was observed using a laser microscope, and the evaluation of the smoothness was performed in accordance with the evaluation criteria described below. The results are shown in Table 3.
++:平滑。 ++: Smooth.
+:可確認到細微凹凸。 +: Fine unevenness can be confirmed.
-:可明顯確認到大凹凸。 -: A large bump can be clearly confirmed.
使用雷射顯微鏡,測定由實施例6~10與比較例8~14所形成之貫通孔中,銅層A與Fe-Ni36%層的梯度差(L1)、及Fe-Ni36%層與銅層B的梯度差(L2),依照以下所示評價基準評價梯度差的程度。又,使用雷射顯微鏡,測定由實施例11與比較例15所形成貫通孔中,銅層C與SUS304層的梯度差(L1),依照以下所示評價基準評價梯度差的程度。又,使用雷射顯微鏡,測定由實施例12與比較例16所形成貫通孔中,銅層D與SUS316層的梯度差(L1),依照以 下所示評價基準評價梯度差的程度。結果如表3所示。 The gradient difference (L 1 ) between the copper layer A and the Fe-Ni 36% layer and the Fe-Ni 36% layer and copper in the through holes formed in Examples 6 to 10 and Comparative Examples 8 to 14 were measured using a laser microscope. The gradient difference (L 2 ) of the layer B was evaluated in accordance with the evaluation criteria shown below. Further, the gradient difference (L 1 ) between the copper layer C and the SUS304 layer in the through holes formed in Example 11 and Comparative Example 15 was measured using a laser microscope, and the degree of the gradient difference was evaluated in accordance with the evaluation criteria described below. Further, the gradient difference (L 1 ) between the copper layer D and the SUS316 layer in the through-holes formed in Example 12 and Comparative Example 16 was measured using a laser microscope, and the degree of the gradient difference was evaluated in accordance with the evaluation criteria described below. The results are shown in Table 3.
++:未滿1μm。 ++: Less than 1 μm.
-:1~5μm。 -: 1~5μm.
--:大於5μm。 --: Greater than 5 μm.
由表3所示結果得知,由實施例6~12所形成貫通孔的壁面均平滑性優異,且梯度差(L1及L2)較小。另一方面,得知由比較例8~16所形成貫通孔的壁面均平滑性差,且梯度差(L1及L2)較大。由上述得知,若使用本實施形態的蝕刻液組成物,藉由統括地對含鎳層與 銅系層施行蝕刻處理,可形成壁面平滑、且含鎳層與銅系層不致有較大梯度差的貫通孔。 As is apparent from the results shown in Table 3, the through-holes formed in Examples 6 to 12 had excellent wall smoothness and a small gradient difference (L 1 and L 2 ). On the other hand, it was found that the wall surfaces of the through holes formed in Comparative Examples 8 to 16 were all poor in smoothness, and the gradient differences (L 1 and L 2 ) were large. From the above, when the etching liquid composition of the present embodiment is used, the nickel-containing layer and the copper-based layer are collectively etched to form a smooth wall surface, and the nickel-containing layer and the copper-based layer are not subjected to a large gradient. Poor through hole.
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