CN105274527B - Etchant and the method for manufacturing array substrate for liquid crystal display using it - Google Patents
Etchant and the method for manufacturing array substrate for liquid crystal display using it Download PDFInfo
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- CN105274527B CN105274527B CN201510354318.4A CN201510354318A CN105274527B CN 105274527 B CN105274527 B CN 105274527B CN 201510354318 A CN201510354318 A CN 201510354318A CN 105274527 B CN105274527 B CN 105274527B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
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Abstract
The invention discloses a kind of etchants, including：Metal layer agent；Fluoride；The compound of nitrogen atom；Phosphoric acid；Polyethylene glycol；And the water of surplus, wherein be based on 1 gram of above-mentioned etchant, mM amount of the repetitive unit of polyethylene glycol is for indicating ethylene oxide level, and the ethylene oxide level of etchant is 0.4~2；And disclose a kind of method of array substrate using the composition manufacture for liquid crystal display.
Description
Technical field
The present invention relates to a kind of etchants for metal layer and a kind of manufactured using the etchant to use
In the method for the array substrate of liquid crystal display.
Background technique
As such as LCD, PDP and OLED especially flat panel display screen of TFT-LCD become larger, examine again extensively
Consider using the single layer being made of copper or copper alloy, either using copper or the alloy or gold of copper alloy/other metals, other metals
Belong to the multilayer for being greater than two layers of oxide, to reduce routing resistance and improve the adhesiveness with dielectric silicon layer.For example, copper/molybdenum layer,
Copper/titanium layer or copper/molybdenum-titanium layer are formed as the grid line of TFT-LCD and constitute the source/drain wiring of data line, and can help to
Expand indicator screen.Therefore, it is necessary to develop the composition with superior etch characteristic for etching these comprising base copper
Metal layer.
As etch combination above-mentioned, usually using hydrogen peroxide and amino acids etching solution, hydrogen peroxide and
Phosphoric acid class etching solution, hydrogen peroxide and polyethylene glycols etching solution etc..
As an example, it includes water solubilityization that Korean Patent Publication No 10-2011-0031796, which is disclosed a kind of,
The etching solution for closing object, has：A) hydrogen peroxide (H2O2), B) persulfate, C) soluble compound with amino and carboxyl with
And water.
Korean Patent Publication No 10-2012-0044630 discloses a kind of etching solution of metal layer for cupric,
Including：Hydrogen peroxide, phosphoric acid, cyclic amine compound, sulfate, fluoboric acid and water.
Korean Patent Publication No 10-2012-0081764 discloses a kind of etching solution, including：A) ammonium hydroxide, B)
Hydrogen peroxide, C) fluoride, D) polyalcohol and E) water.
However, for the metal layer containing base copper CD loss, gradient (taper), pattern lines degree, metallic residue,
Storage stability, sheet material quantity of processing etc., etching solution above-mentioned are insufficient in related fields required
Condition.
Patent document
Patent document 1：Korean Patent Publication No 10-2011-0031796
Patent document 2：Korean Patent Publication No 10-2012-0044630
Patent document 3：Korean Patent Publication No 10-2012-0081764
Summary of the invention
Therefore, the present invention has been made to solve the above problems, and the object of the present invention is to provide a kind of etching solution groups
Object is closed especially to mention with excellent job security, excellent etch-rate and to the excellent processing capacity of a large amount of sheet materials
For a kind of etchant, also have while with excellent etch-rate and to the excellent processing capacity of a large amount of sheet materials
There is optimal etch profile；And provide a kind of method using the composition manufacture array substrate for liquid crystal display.
To achieve the goals above, one aspect of the present invention provides a kind of etchant, including：Metal layer
Agent；Fluoride；The compound of nitrogen atom；Phosphoric acid；The polyethylene glycol of following chemical formula 1；And the water of surplus, wherein be based on 1
Gram etchant, mM amount of the repetitive unit of the polyethylene glycol of following chemical formula 1 is for indicating ethylene oxide
Level, and the ethylene oxide level of the etchant is 0.4~2.
[chemical formula 1]
Wherein n is 2~100 integer, and
R1And R2It is each independently the aliphatic alkyl or phenyl of hydrogen, C1~C4.
Another aspect of the present invention provides a kind of method for manufacturing the array substrate for liquid crystal display, including：
A) the step of forming grid on substrate；
B) gate insulator is formed on the substrate for include the steps that the grid；
C) the step of forming semiconductor layer on the gate insulator；
D) the step of forming source/drain on the semiconductor layer；And
E) the step of forming the pixel electrode with the drain electrode connection；
Wherein, step a), d) or e) include forming metal layer and being etched using etchant according to the present invention
The metal layer is come the step of forming electrode.
Etching metal layer liquid composition of the invention can increase the sheet material quantity of processing by adjusting repetitive unit.
In addition, etching metal layer liquid composition of the invention provides excellent etch-rate.
Further, for the etchant of the metal layer containing base copper for example comprising the hydrogen peroxide of low content, because
This it have the following advantages that：Excellent job security, price competitiveness and the effect that can economically dispose the etching solution.
Further, made using method of the etchant manufacture for the array substrate of liquid crystal display in the present invention
It can be manufactured by forming the electrode with superior etch profile in the array substrate for liquid crystal display with excellent
The array substrate for liquid crystal display of drive characteristic.
Specific embodiment
In the following, detailed description will be given of the present invention.
The present invention relates to a kind of etchants, including：Metal layer agent；Fluoride；The compound of nitrogen atom；
Phosphoric acid；The polyethylene glycol of following chemical formula 1；And the water of surplus, wherein be based on 1 gram of etchant, following chemical formula 1
Polyethylene glycol repetitive unit mM amount for indicating ethylene oxide level, and the epoxy of above-mentioned etchant
Ethane level is 0.4~2.
[chemical formula 1]
Wherein n is 2~100 integer, and
R1And R2It is each independently the aliphatic alkyl or phenyl of hydrogen, C1~C4.
Further, more preferable R1And R2It is each independently hydrogen or methyl.
The present invention can provide the etching solution combination that ethylene oxide level is 0.4~2 by adjusting the repetitive unit of chemical formula 1
Object, and the sheet material quantity of etch-rate and processing is thus improved, it finally can provide the metal layer erosion for showing optimal etch profile
Carve liquid composition.
In the present invention, ethylene oxide level is preferably 0.4~2, and more preferably 0.8~1.5.If ethylene oxide is horizontal
Less than 0.4, the improvement to the sheet material quantity of processing is inadequate, and if it is more than 2, there is etching speed since viscosity increases
The problem of rate reduces.
Metal layer agent is the main component for metal oxide layer, is not particularly limited, but can be and be selected from
By one of groups formed such as hydrogen peroxide, peracetic acid, acidified metal, nitric acid, persulfate, halogen acids and halate or more
Kind.
Acidified metal refers to the metal being oxidized, such as Fe3+、Cu2+Deng, and it is included under solution state and is dissociated into
Fe3+、Cu2+Deng compound.Persulfate includes ammonium persulfate, over cure acid alkali metal salt, ammonium persulfate-sodium bisulfate
(oxone) etc., and halate includes chlorate, perchlorate, bromate, high bromate etc..
Etching metal layer liquid composition can be prepared by including following component：Total weight based on composition,
The metal layer agent of 1wt%~40wt%；
The fluoride of 0.1wt%~5wt%；
The compound of the nitrogen atom of 0.1wt%~10wt%；
The phosphoric acid of 0.01wt%~10wt%；
The wt% amount of the polyethylene glycol of chemical formula 1 makes the ethylene oxide level 0.4~2；And
The water of surplus.
The content of metal layer agent can carry out control appropriate according to the type and property of oxidant, and work as metal layer
When the amount of oxidant is fallen within the above-described range, the etch-rate of metal layer can be suitably adjusted.
The polyethylene glycol of chemical formula 1 of the present invention is the addition polymer of ethylene oxide, and its repetitive unit is ethylene
Oxygen.Total weight based on composition, the wt% amount of the polyethylene glycol of chemical formula 1 are to make the epoxy second of the polyethylene glycol of chemical formula 1
Alkane level is 0.4~2, preferably 0.8~1.5.Therefore, by adjusting the repetitive unit of chemical formula 1, the piece of processing can be prepared
The etching metal layer liquid composition that material quantity increases without reducing etch-rate.
It include the fluoride in etchant of the present invention for removing etch residue, and for etching titanium-based gold
Belong to layer.
Total weight based on composition, the amount of fluoride can be 0.1wt%~5wt%, more preferable 0.1wt%~2wt%.
It is preferred that above range is because can prevent etch residue and not cause the etching of glass substrate or following silicon layer.
However, if the amount of fluoride exceeds above range, since inhomogenous etching characteristic causes to generate in substrate
Spot since too fast etch-rate lower layer is likely to be broken, and is difficult to control etch-rate during processing.
Preferably, fluoride, which can be, can be dissociated into fluorine ion or polyatom fluorine ion (polyatomic fluorine
Ion compound).
The compound that fluorine ion or polyatom fluorine ion can be dissociated into can be selected from by ammonium fluoride, sodium fluoride, fluorination
It is one or more in the group of potassium, sodium bifluoride and potassium bifluoride composition.
It include that the compound of the nitrogen atom in etchant of the present invention is used to increase the etch-rate of etching solution
With the sheet material quantity of processing.
The compound of nitrogen atom known in the art can be used without limiting, and typically can be used
Compound in molecule containing amino and carboxylic acid group.
Compound in the molecule containing amino and carboxylic acid group may include containing one for example between carboxylic acid group and amino
The a-amino acid of carbon atom, and be typically：Monovalence amino acid, such as glycine, glutamic acid, glutamine, different bright ammonia
Acid, proline, tyrosine, arginine etc.；With multivalence amino acid, such as iminodiacetic acid, nitrilotriacetic acid, ethylene glycol four
Acetic acid.The compound of nitrogen atom can be used alone or being applied in combination with two or more.
Total weight based on composition, the amount of the compound of nitrogen atom are 0.1wt%~10wt%, more preferably
1wt%~5wt%.It is preferred that above range is because it can improve the etch-rate of etching solution and the sheet material quantity of processing.
Phosphoric acid promotes etching of the metal layer agent to copper by providing hydrogen ion to etching solution.Further, since with by oxygen
The copper ion of change increases dissolubility in water in conjunction with phosphate is formed, it eliminates the metal layer residue after etching.
Total weight based on composition, the amount of phosphoric acid are 0.01wt%~10wt%, and more preferably 0.01wt%~
1wt%.When the amount of phosphoric acid is met the above range, expected function can be performed, because excessive caused by can avoid by phosphoric acid
It etches metal layer and corrodes the risk of lower layer, and the etch-rate due to the too low copper metal layer of the content of phosphoric acid will not be caused to become
Low problem.
Water used in the present invention refers to deionized water, and using the water for semiconductor technology, and it is preferable to use be greater than
The water of 18M Ω/cm.
Exceptionally except above-mentioned group, etchant of the invention may also include living selected from etching control agent, surface
At least one of property agent, chelating agent, corrosion inhibitor and pH adjusting agent.
It is not particularly limited with the metal layer that etchant of the invention etches, but etchant of the invention
It can be preferred for etch copper base metal layer, molybdenum base metal layer, titanium-based metal layer or the multilayer being made of these layers.
Copper base metal layer refers to that layers of copper or copper alloy layer, molybdenum base metal layer refer to molybdenum layer or Mo alloy and titanium-based gold
Belong to layer and refers to titanium layer or titanium alloy layer.
Multilayer includes：For example, molybdenum base metal layer/copper base metal layer bilayer, wherein copper base metal layer is lower layer and molybdenum
Base metal layer is upper layer；Copper base metal layer/molybdenum base metal layer bilayer, wherein Mo layer is lower layer and copper base metal layer
It is upper layer；Copper base metal layer/molybdenum base and titanium-based metal layer bilayer；And the multilayer greater than three layers, wherein copper base metal layer and
Molybdenum base metal layer intersecting, such as molybdenum base metal layer/copper base metal layer/molybdenum base metal layer or copper base metal layer/molybdenum base gold
Belong to layer/copper base metal layer.
In addition, multilayer includes：For example, titanium-based metal layer/copper base metal layer bilayer, wherein copper metal layer be lower layer simultaneously
And titanium-based metal layer is upper layer；Copper base metal layer/titanium-based metal layer bilayer, wherein titanium coating is lower layer and copper-based gold
Belonging to layer is upper layer；And the multilayer greater than three layers, wherein copper base metal layer and titanium-based metal layer intersecting, such as titanium-based gold
Belong to layer/copper base metal layer/titanium-based metal layer or copper base metal layer/titanium-based metal layer/copper base metal layer.
By the multiple material for considering to constitute upper layer or lower layer or with the adhesiveness of layer etc., the interlayer of multilayer can determine
Composite structure.
Copper alloy layer, Mo alloy or titanium alloy layer refer to the metal layer produced as alloy, in the alloy, copper,
Molybdenum or titanium are main component and use other different metals according to film character.For example, Mo alloy refers to be as molybdenum
Main component and containing selected from one of titanium (Ti), tantalum (Ta), chromium (Cr), nickel (Ni), neodymium (Nd) and indium (In) or a variety of
Alloy and the layer that produces.
As the specific embodiment of etchant of the present invention, hydrogen peroxide can be used as metal layer agent, and
It may include the water of fluoride, the compound of nitrogen atom, phosphoric acid, the polyethylene glycol of chemical formula 1 and surplus.
Hydrogen peroxide is the main component aoxidized to copper, molybdenum and titanium, also, the total weight based on composition, amount
It can be 1wt%~25wt%, preferably greater than 1wt% and be less than or equal to 10wt%, more preferably higher than 1wt% and be less than
Equal to 5wt%.
When the amount of hydrogen peroxide is fallen within the above-described range, prevents the etch-rate of copper, molybdenum and titanium to be deteriorated, may be implemented to fit
The etching of equivalent, and excellent etching outline can be obtained.
However, will not occur to etch or over etching can occur if the amount of hydrogen peroxide exceeds above range, because
Pattern loss and the loss function as metal line may occurs in this.
The component for constituting etchant of the present invention preferably has semiconductor technology purity.
Further, the method for the array substrate the present invention relates to a kind of manufacture for liquid crystal display, including：
A) the step of forming grid on substrate；
B) gate insulator is formed on the substrate for include the steps that grid；
C) the step of forming semiconductor layer on gate insulator；
D) the step of forming source/drain on the semiconductor layer；And
E) the step of forming the pixel electrode with drain electrode connection；
Wherein, step a), d) or e) include forming metal layer and being etched using etchant according to the present invention
Metal layer is come the step of forming electrode.
By the above method production array substrate for liquid crystal display because include have superior etch profile electrode and
With excellent drive characteristic.
Array substrate for liquid crystal display can be thin film transistor (TFT) (TFT) array substrate.
Hereinafter, the present invention is described in more detail by the embodiment of offer.However, following embodiments are used
In the present invention is described in more detail, the scope of the present invention is not limited by following embodiments.Following embodiments are in model of the invention
It can be suitably modified by those skilled in the art in enclosing.
<Prepare etchant>
Examples 1 to 6 and comparative example 1~6：
Etchant is prepared for by content mixed component described in following table 1.
[table 1]
(unit：Wt%)
[chemical formula 2]
[chemical formula 3]
[chemical formula 4]
[chemical formula 5]
[chemical formula 6]
[chemical formula 7]
[chemical formula 8]
Experimental example 1：Etchant is assessed for the etching outline of Cu/Mo-Ti bilayer
The etching of Cu/Mo-Ti bilayer has been carried out using the etchant of Examples 1 to 6 and comparative example 1~6.When into
The etching for the etchant progress 100 seconds for the use of temperature being about 30 DEG C when row etching.EPD (terminal inspection is measured by naked eyes
Survey (End Point Detection), metal etch timing) obtain etch-rate according to the time.Using SEM, (Hitachi is public
Department, model S4700) profile cross section that has detected etched Cu/Mo-Ti bilayer, as a result it is shown in the following table 2.
Experimental example 2：The sheet material quantity of assessment processing
It has been carried out using the etchant of Examples 1 to 6 and comparative example 1~6 with reference to test, and to for referring to
The copper powder of 4000ppm is added in the etching solution of test and is completely dissolved.Later, it is carried out again with the etching solution for refer to test
Etching, and the reduction ratio of etch-rate is assessed.
<Evaluation criteria>
○：Excellent (the reduction ratio of etch-rate is less than 10%)
△：Well (the reduction ratio of etch-rate is 10%~20%)
×：Difference (the reduction ratio of etch-rate is greater than 20%)
[table 2]
Claims (3)
1. a kind of for copper base metal layer/molybdenum-titanium-base alloy layer etchant, based on the total weight of the composition,
Including：
The hydrogen peroxide of 1wt%~40wt%；
The fluoride of 0.1wt%~5wt%；
The compound of the nitrogen atom of 0.1wt%~10wt%；
The phosphoric acid of 0.01wt%~10wt%；
Polyethylene glycol, the polyethylene glycol are selected from the group being made of the compound represented by chemical formula 2, chemical formula 4 and chemical formula 5
At least one of；And
The water of surplus,
[chemical formula 2]
[chemical formula 4]
[chemical formula 5]
Wherein, it is based on 1 gram of etchant, mM amount of the repetitive unit of the polyethylene glycol is for indicating epoxy
Ethane is horizontal, and the ethylene oxide level of the etchant is 0.4~2, and the wt% amount of the polyethylene glycol is to make
The ethylene oxide level is 0.4~2.
2. etchant according to claim 1, based on the total weight of the composition, including 1wt%~
The hydrogen peroxide of 25wt%, wherein the compound of the nitrogen atom is amino acid.
3. a kind of method of array substrate of manufacture for liquid crystal display, including：
A) the step of forming grid on substrate；
B) gate insulator is formed on the substrate for include the steps that the grid；
C) the step of forming semiconductor layer on the gate insulator；
D) the step of forming source/drain on the semiconductor layer；And
E) the step of forming the pixel electrode with the drain electrode connection；
Wherein, step a), d) or e) include forming metal layer and being combined using etching solution according to claim 1 or 2
Object etches the metal layer come the step of forming electrode.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020140080591A KR102204228B1 (en) | 2014-06-30 | 2014-06-30 | Etching solution composition for metal layer and manufacturing method of an array substrate for Liquid crystal display using the same |
| KR10-2014-0080591 | 2014-06-30 |
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| CN105274527B true CN105274527B (en) | 2018-11-20 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103052907A (en) * | 2010-07-30 | 2013-04-17 | 东友Fine-Chem股份有限公司 | Method for preparing array substrate for liquid crystal display device |
| CN103668206A (en) * | 2012-09-19 | 2014-03-26 | 东友精细化工有限公司 | Etching solution combination for copper/titanium layers |
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| KR100505328B1 (en) * | 2002-12-12 | 2005-07-29 | 엘지.필립스 엘시디 주식회사 | ETCHING SOLUTIONS AND METHOD TO REMOVE MOLYBDENUM RESIDUE FOR Cu MOLYBDENUM MULTILAYERS |
| KR101495683B1 (en) * | 2008-09-26 | 2015-02-26 | 솔브레인 주식회사 | Cu or Cu/Mo or Cu/Mo alloy electrode etching liquid in Liquid Crystal Display system |
| KR101529733B1 (en) * | 2009-02-06 | 2015-06-19 | 동우 화인켐 주식회사 | Manufacturing method of an array substrate for liquid crystal display |
| KR101674680B1 (en) | 2009-09-21 | 2016-11-10 | 동우 화인켐 주식회사 | Manufacturing method of an array substrate for liquid crystal display |
| TWI510848B (en) * | 2010-08-02 | 2015-12-01 | Dongwoo Fine Chem Co Ltd | Etchant composistion of etching a commper-based metal layer and method of fabricating an array substrate for a liquid crystal display |
| KR20120044630A (en) | 2010-10-28 | 2012-05-08 | 주식회사 동진쎄미켐 | Etchant composition for copper-containing metal film and etching method using the same |
| KR101873583B1 (en) | 2011-01-12 | 2018-07-03 | 동우 화인켐 주식회사 | Manufacturing method of an array substrate for liquid crystal display |
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- 2014-06-30 KR KR1020140080591A patent/KR102204228B1/en active IP Right Grant
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103052907A (en) * | 2010-07-30 | 2013-04-17 | 东友Fine-Chem股份有限公司 | Method for preparing array substrate for liquid crystal display device |
| CN103668206A (en) * | 2012-09-19 | 2014-03-26 | 东友精细化工有限公司 | Etching solution combination for copper/titanium layers |
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| Publication number | Publication date |
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| KR102204228B1 (en) | 2021-01-18 |
| TWI662156B (en) | 2019-06-11 |
| KR20160001986A (en) | 2016-01-07 |
| CN105274527A (en) | 2016-01-27 |
| TW201600643A (en) | 2016-01-01 |
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