TWI611049B - 腐蝕抑制劑及相關組合物及方法 - Google Patents
腐蝕抑制劑及相關組合物及方法 Download PDFInfo
- Publication number
- TWI611049B TWI611049B TW104134573A TW104134573A TWI611049B TW I611049 B TWI611049 B TW I611049B TW 104134573 A TW104134573 A TW 104134573A TW 104134573 A TW104134573 A TW 104134573A TW I611049 B TWI611049 B TW I611049B
- Authority
- TW
- Taiwan
- Prior art keywords
- acid
- polishing composition
- inhibitor
- chemical mechanical
- weight
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/08—Anti-corrosive paints
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Preventing Corrosion Or Incrustation Of Metals (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462066484P | 2014-10-21 | 2014-10-21 | |
| US62/066,484 | 2014-10-21 | ||
| US201562198013P | 2015-07-28 | 2015-07-28 | |
| US62/198,013 | 2015-07-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201629269A TW201629269A (zh) | 2016-08-16 |
| TWI611049B true TWI611049B (zh) | 2018-01-11 |
Family
ID=55748310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104134573A TWI611049B (zh) | 2014-10-21 | 2015-10-21 | 腐蝕抑制劑及相關組合物及方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10124464B2 (https=) |
| EP (1) | EP3209815B1 (https=) |
| JP (1) | JP6810029B2 (https=) |
| KR (1) | KR102477843B1 (https=) |
| CN (2) | CN107148496A (https=) |
| TW (1) | TWI611049B (https=) |
| WO (1) | WO2016065057A1 (https=) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3448948B1 (en) * | 2016-04-27 | 2021-07-28 | Basf Se | Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or cobalt alloy comprising substrates |
| TWI660017B (zh) | 2016-07-14 | 2019-05-21 | Cabot Microelectronics Corporation | 用於鈷化學機械拋光(cmp)之替代氧化劑 |
| US10294399B2 (en) * | 2017-01-05 | 2019-05-21 | Cabot Microelectronics Corporation | Composition and method for polishing silicon carbide |
| KR102405560B1 (ko) * | 2017-02-28 | 2022-06-07 | 후지필름 가부시키가이샤 | 연마액, 연마액의 제조 방법, 연마액 원액, 연마액 원액 수용체, 화학적 기계적 연마 방법 |
| US10233356B2 (en) | 2017-03-06 | 2019-03-19 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing slurry for cobalt-containing substrate |
| US10077382B1 (en) | 2017-03-06 | 2018-09-18 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for polishing cobalt-containing substrate |
| CN110431209B (zh) * | 2017-03-14 | 2022-06-28 | 福吉米株式会社 | 研磨用组合物、其制造方法以及使用其的研磨方法及基板的制造方法 |
| JP6901297B2 (ja) | 2017-03-22 | 2021-07-14 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| CN110914476A (zh) * | 2017-08-03 | 2020-03-24 | 日华化学株式会社 | 金属用洗净剂组合物 |
| WO2019050909A1 (en) * | 2017-09-07 | 2019-03-14 | Stepan Company | CORROSION INHIBITORS FOR OIL FIELD APPLICATIONS |
| US20190085205A1 (en) * | 2017-09-15 | 2019-03-21 | Cabot Microelectronics Corporation | NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TiN-SiN CMP APPLICATIONS |
| US10647887B2 (en) * | 2018-01-08 | 2020-05-12 | Cabot Microelectronics Corporation | Tungsten buff polishing compositions with improved topography |
| US20190211228A1 (en) * | 2018-01-09 | 2019-07-11 | Cabot Microelectronics Corporation | Tungsten bulk polishing method with improved topography |
| US11021786B2 (en) * | 2018-12-04 | 2021-06-01 | Texas Instruments Incorporated | Copper passivation |
| US10763119B2 (en) | 2018-12-19 | 2020-09-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
| US10759970B2 (en) | 2018-12-19 | 2020-09-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
| DE102019104019A1 (de) * | 2019-02-18 | 2020-08-20 | Johann Wolfgang Goethe-Universität | Gegen Korrosion geschütztes Erzeugnis, Verfahren zur Herstellung und Verwendung einer Aminosäureverbindung zum Korrosionsschutz |
| US10947413B2 (en) * | 2019-03-29 | 2021-03-16 | Rohm And Haas Electronic Materials Cmp Holdings | Chemical mechanical polishing method for cobalt with high cobalt removal rates and reduced cobalt corrosion |
| US11001733B2 (en) * | 2019-03-29 | 2021-05-11 | Fujimi Incorporated | Compositions for polishing cobalt and low-K material surfaces |
| JP7607581B2 (ja) * | 2019-04-17 | 2024-12-27 | シーエムシー マテリアルズ リミティド ライアビリティ カンパニー | タングステンバフ用途のための表面被覆された研削粒子 |
| US12593637B2 (en) | 2019-05-13 | 2026-03-31 | Chempower Corporation | Chemical planarization |
| US11292938B2 (en) * | 2019-09-11 | 2022-04-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of selective chemical mechanical polishing cobalt, zirconium oxide, poly-silicon and silicon dioxide films |
| TWI769619B (zh) * | 2020-01-07 | 2022-07-01 | 美商Cmc材料股份有限公司 | 經衍生的聚胺基酸 |
| CN116134110A (zh) * | 2020-07-28 | 2023-05-16 | Cmc材料股份有限公司 | 包含阴离子型及阳离子型抑制剂的化学机械抛光组合物 |
| US11680186B2 (en) | 2020-11-06 | 2023-06-20 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
| CN112501617B (zh) * | 2020-11-12 | 2021-11-23 | 陕西科技大学 | 一种双疏水链改性l-组氨酸缓蚀剂及其制备方法和应用 |
| KR20230125258A (ko) * | 2020-12-21 | 2023-08-29 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 화학적 기계적 연마 조성물 및 이의 사용 방법 |
| CN114686110A (zh) * | 2020-12-30 | 2022-07-01 | 安集微电子科技(上海)股份有限公司 | 一种化学机械抛光液 |
| WO2022145654A1 (ko) * | 2020-12-30 | 2022-07-07 | 에스케이씨솔믹스 주식회사 | 반도체 공정용 연마 조성물, 연마 조성물의 제조 방법 및 연마 조성물을 적용한 반도체 소자의 제조 방법 |
| US20220243094A1 (en) * | 2021-02-04 | 2022-08-04 | Cmc Materials, Inc. | Silicon carbonitride polishing composition and method |
| CN113881347B (zh) * | 2021-10-15 | 2023-01-31 | 深圳市科玺化工有限公司 | 一种硅晶圆用化学机械精抛液 |
| US20230135325A1 (en) * | 2021-10-28 | 2023-05-04 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of use thereof |
| CN114106702B (zh) * | 2021-12-13 | 2022-11-18 | 广东凯盟钝化防锈技术有限公司 | 一种不锈钢流体粗抛蜡及其制备方法 |
| JP2026502923A (ja) * | 2022-12-30 | 2026-01-27 | ケムパワー コーポレーション | 化学的平坦化用ツール |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI367961B (https=) * | 2007-12-06 | 2012-07-11 | Uwiz Technology Co Ltd | |
| TW201243039A (en) * | 2011-03-22 | 2012-11-01 | Basf Se | A chemical mechanical polishing (CMP) composition comprising two types of corrosion inhibitors |
Family Cites Families (63)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4711735A (en) | 1986-09-12 | 1987-12-08 | Gulley Harold J | Coolant additive with corrosion inhibitive and scale preventative properties |
| US5230833A (en) | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
| US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
| US5316573A (en) | 1992-03-12 | 1994-05-31 | International Business Machines Corporation | Corrosion inhibition with CU-BTA |
| US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
| JP3270282B2 (ja) | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
| JP3313505B2 (ja) | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
| JP3329572B2 (ja) | 1994-04-15 | 2002-09-30 | 福田金属箔粉工業株式会社 | 印刷回路用銅箔およびその表面処理方法 |
| US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
| US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
| US5872633A (en) | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
| US6585933B1 (en) | 1999-05-03 | 2003-07-01 | Betzdearborn, Inc. | Method and composition for inhibiting corrosion in aqueous systems |
| GB9924358D0 (en) | 1999-10-14 | 1999-12-15 | Brad Chem Technology Ltd | Corrosion inhibiting compositions |
| JP2002231666A (ja) * | 2001-01-31 | 2002-08-16 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
| US6936543B2 (en) * | 2002-06-07 | 2005-08-30 | Cabot Microelectronics Corporation | CMP method utilizing amphiphilic nonionic surfactants |
| JP2004172606A (ja) | 2002-11-08 | 2004-06-17 | Sumitomo Chem Co Ltd | 金属研磨材組成物及び研磨方法 |
| KR20070104479A (ko) * | 2003-06-06 | 2007-10-25 | 어플라이드 머티어리얼스, 인코포레이티드 | 전도성 물질을 폴리싱하기 위한 폴리싱 조성물 및 방법 |
| US7300603B2 (en) * | 2003-08-05 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers |
| JP2005244123A (ja) * | 2004-02-27 | 2005-09-08 | Fujimi Inc | 研磨用組成物 |
| US7161247B2 (en) * | 2004-07-28 | 2007-01-09 | Cabot Microelectronics Corporation | Polishing composition for noble metals |
| WO2006029160A2 (en) * | 2004-09-07 | 2006-03-16 | Phifer-Smith Corporation | Copper processing using an ozone-solvent solution |
| US7988878B2 (en) * | 2004-09-29 | 2011-08-02 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective barrier slurry for chemical mechanical polishing |
| US20070144915A1 (en) * | 2005-12-22 | 2007-06-28 | Applied Materials, Inc. | Process and composition for passivating a substrate during electrochemical mechanical polishing |
| US7326750B1 (en) * | 2006-10-12 | 2008-02-05 | Kivanc Isik | Expanded nanoclays and method of producing such expanded nanoclays |
| US7931714B2 (en) | 2007-10-08 | 2011-04-26 | Uwiz Technology Co., Ltd. | Composition useful to chemical mechanical planarization of metal |
| US8435421B2 (en) * | 2007-11-27 | 2013-05-07 | Cabot Microelectronics Corporation | Metal-passivating CMP compositions and methods |
| US8337716B2 (en) * | 2008-01-23 | 2012-12-25 | Uwiz Technology Co., Ltd. | Sarcosine compound used as corrosion inhibitor |
| KR101481573B1 (ko) | 2008-02-12 | 2015-01-14 | 삼성전자주식회사 | 화학적 기계적 연마용 슬러리 조성물 및 이를 이용한화학적 기계적 연마 방법 |
| CN101525563B (zh) | 2008-03-03 | 2011-04-13 | 盟智科技股份有限公司 | 用于后研磨清洁剂的腐蚀抑制剂 |
| CN101580700B (zh) | 2008-05-16 | 2015-08-19 | 盟智科技股份有限公司 | 化学机械研磨的组成物 |
| KR20100001785A (ko) * | 2008-06-27 | 2010-01-06 | 유위즈 테크놀로지 컴퍼니 리미티드 | 화학기계 연마 조성물 |
| US8722592B2 (en) | 2008-07-25 | 2014-05-13 | Wincom, Inc. | Use of triazoles in reducing cobalt leaching from cobalt-containing metal working tools |
| US8540893B2 (en) | 2008-08-04 | 2013-09-24 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and methods relating thereto |
| US20100193728A1 (en) * | 2008-08-05 | 2010-08-05 | Song-Yuan Chang | Chemical Mechanical Polishing Composition |
| US8071479B2 (en) | 2008-12-11 | 2011-12-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and methods relating thereto |
| TWI454561B (zh) | 2008-12-30 | 2014-10-01 | Uwiz Technology Co Ltd | A polishing composition for planarizing the metal layer |
| US8222145B2 (en) * | 2009-09-24 | 2012-07-17 | Dupont Air Products Nanomaterials, Llc | Method and composition for chemical mechanical planarization of a metal-containing substrate |
| KR101801413B1 (ko) * | 2009-12-23 | 2017-12-20 | 램 리써치 코포레이션 | 퇴적 후 웨이퍼 세정 포뮬레이션 |
| CN102770524B (zh) | 2010-01-29 | 2015-04-22 | 高级技术材料公司 | 附有金属布线的半导体用清洗剂 |
| JP5858597B2 (ja) | 2010-01-29 | 2016-02-10 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | タングステン配線半導体用洗浄剤 |
| WO2011152966A2 (en) * | 2010-06-01 | 2011-12-08 | Applied Materials, Inc. | Chemical planarization of copper wafer polishing |
| KR20120019242A (ko) * | 2010-08-25 | 2012-03-06 | 삼성전자주식회사 | 연마용 슬러리 및 이를 이용하는 반도체 장치의 제조 방법 |
| JPWO2012073909A1 (ja) | 2010-11-29 | 2014-05-19 | 和光純薬工業株式会社 | 銅配線用基板洗浄剤及び銅配線半導体基板の洗浄方法 |
| KR20140019401A (ko) * | 2011-03-22 | 2014-02-14 | 바스프 에스이 | 중합체성 폴리아민을 포함하는 화학적 기계적 폴리싱 (cmp) 조성물 |
| EP2502969A1 (en) * | 2011-03-22 | 2012-09-26 | Basf Se | A chemical mechanical polishing (cmp) composition comprising two types of corrosion inhibitors |
| CN102304327A (zh) * | 2011-07-05 | 2012-01-04 | 复旦大学 | 一种基于金属Co的抛光工艺的抛光液 |
| JP6051632B2 (ja) * | 2011-07-20 | 2016-12-27 | 日立化成株式会社 | 研磨剤及び基板の研磨方法 |
| US8865013B2 (en) | 2011-08-15 | 2014-10-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing tungsten |
| US20130186850A1 (en) | 2012-01-24 | 2013-07-25 | Applied Materials, Inc. | Slurry for cobalt applications |
| KR102105381B1 (ko) * | 2012-02-15 | 2020-04-29 | 엔테그리스, 아이엔씨. | 조성물을 이용한 cmp-후 제거 방법 및 그의 이용 방법 |
| TWI456013B (zh) | 2012-04-10 | 2014-10-11 | 盟智科技股份有限公司 | 研磨液組成物 |
| US8717710B2 (en) | 2012-05-08 | 2014-05-06 | HGST Netherlands, B.V. | Corrosion-resistant bit patterned media (BPM) and discrete track media (DTM) and methods of production thereof |
| US8980750B2 (en) * | 2012-07-06 | 2015-03-17 | Basf Se | Chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and a carbonate salt |
| CN102796458B (zh) * | 2012-07-17 | 2014-04-23 | 清华大学 | 化学机械抛光水性组合物及钛基片化学机械抛光工艺方法 |
| WO2014109929A1 (en) | 2013-01-11 | 2014-07-17 | Applied Materials, Inc | Chemical mechanical polishing apparatus and methods |
| SG11201506102TA (en) | 2013-02-28 | 2015-09-29 | Fujimi Inc | Polishing slurry for cobalt removal |
| US8865635B1 (en) * | 2013-04-09 | 2014-10-21 | S.C. Johnson & Son, Inc. | Aqueous-based cleaning composition with a water-insoluble, fatty alcohol-based builder |
| US10358579B2 (en) | 2013-12-03 | 2019-07-23 | Cabot Microelectronics Corporation | CMP compositions and methods for polishing nickel phosphorous surfaces |
| US10059860B2 (en) * | 2014-02-26 | 2018-08-28 | Fujimi Incorporated | Polishing composition |
| US10217645B2 (en) * | 2014-07-25 | 2019-02-26 | Versum Materials Us, Llc | Chemical mechanical polishing (CMP) of cobalt-containing substrate |
-
2015
- 2015-10-21 WO PCT/US2015/056744 patent/WO2016065057A1/en not_active Ceased
- 2015-10-21 KR KR1020177013244A patent/KR102477843B1/ko active Active
- 2015-10-21 TW TW104134573A patent/TWI611049B/zh active
- 2015-10-21 JP JP2017519872A patent/JP6810029B2/ja active Active
- 2015-10-21 EP EP15853494.1A patent/EP3209815B1/en active Active
- 2015-10-21 CN CN201580057443.7A patent/CN107148496A/zh active Pending
- 2015-10-21 US US14/919,404 patent/US10124464B2/en active Active
- 2015-10-21 CN CN202310169002.2A patent/CN116288366A/zh active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI367961B (https=) * | 2007-12-06 | 2012-07-11 | Uwiz Technology Co Ltd | |
| TW201243039A (en) * | 2011-03-22 | 2012-11-01 | Basf Se | A chemical mechanical polishing (CMP) composition comprising two types of corrosion inhibitors |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3209815B1 (en) | 2021-12-29 |
| CN116288366A (zh) | 2023-06-23 |
| CN107148496A (zh) | 2017-09-08 |
| US20160107289A1 (en) | 2016-04-21 |
| KR20170068584A (ko) | 2017-06-19 |
| US10124464B2 (en) | 2018-11-13 |
| JP2018500456A (ja) | 2018-01-11 |
| EP3209815A1 (en) | 2017-08-30 |
| EP3209815A4 (en) | 2018-08-01 |
| WO2016065057A1 (en) | 2016-04-28 |
| KR102477843B1 (ko) | 2022-12-16 |
| TW201629269A (zh) | 2016-08-16 |
| JP6810029B2 (ja) | 2021-01-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI611049B (zh) | 腐蝕抑制劑及相關組合物及方法 | |
| US9944828B2 (en) | Slurry for chemical mechanical polishing of cobalt | |
| JP6110444B2 (ja) | コバルト含有基板の化学的機械的研磨(cmp) | |
| TWI669359B (zh) | 低淺盤效應銅化學機械平坦化 | |
| US7300601B2 (en) | Passivative chemical mechanical polishing composition for copper film planarization | |
| JP6480381B2 (ja) | セリア被覆シリカ研磨剤を使用したバリア化学機械平坦化スラリー | |
| CN101553550B (zh) | 用于抛光镶嵌结构中的铝/铜及钛的组合物 | |
| JP4628423B2 (ja) | 基板の研磨及び製造方法 | |
| US20090289217A1 (en) | Polishing composition | |
| TWI629325B (zh) | 鈷凹陷控制劑 | |
| TWI580767B (zh) | 鈷拋光加速劑 | |
| JP2019039004A (ja) | 金属化学機械平坦化(cmp)組成物およびその方法 | |
| JP2011508423A (ja) | 金属除去速度を制御するためのハロゲン化物アニオン | |
| TW201024397A (en) | Combination, method, and composition for chemical mechanical planarization of a tungsten-containing substrate | |
| EP2013308A1 (en) | Cmp method for copper-containing substrates | |
| EP3103133A1 (en) | Cmp method for suppression of titanium nitride and titanium/titanium nitride removal | |
| TW201623554A (zh) | 一種組合物在阻障層拋光中的應用 | |
| TW202106824A (zh) | 以高鈷移除速率及減少的鈷腐蝕之鈷化學機械拋光方法 | |
| TWI875753B (zh) | 用於鎢擦光應用之表面塗覆研磨顆粒 | |
| JP2024511506A (ja) | 研磨用組成物及びその使用方法 | |
| JP2026506274A (ja) | 金属膜のcmpのための組成物及び方法 |