TWI608649B - 石墨烯（ｇｒａｐｈｅｎｅ）和能量貯存裝置以及彼之製法 - Google Patents

石墨烯（ｇｒａｐｈｅｎｅ）和能量貯存裝置以及彼之製法 Download PDF

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TWI608649B
TWI608649B TW101135873A TW101135873A TWI608649B TW I608649 B TWI608649 B TW I608649B TW 101135873 A TW101135873 A TW 101135873A TW 101135873 A TW101135873 A TW 101135873A TW I608649 B TWI608649 B TW I608649B
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active material
graphene oxide
potential
graphene
storage device
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TW101135873A
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Chinese (zh)
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TW201324930A (zh
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等等力弘篤
齋藤祐美子
川上貴洋
野元邦治
湯川幹央
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半導體能源研究所股份有限公司
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    • H—ELECTRICITY
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    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/58—Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy; of polyanionic structures, e.g. phosphates, silicates or borates
    • H01M4/583—Carbonaceous material, e.g. graphite-intercalation compounds or CFx
    • H01M4/5835—Comprising fluorine or fluoride salts
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    • H01M4/62—Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
    • H01M4/624—Electric conductive fillers
    • H01M4/625—Carbon or graphite
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
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    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/19—Preparation by exfoliation
    • C01B32/192—Preparation by exfoliation starting from graphitic oxides
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    • H01M4/48—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
    • H01M4/50—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese
    • H01M4/505—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
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TW101135873A 2011-09-30 2012-09-28 石墨烯（ｇｒａｐｈｅｎｅ）和能量貯存裝置以及彼之製法 TWI608649B (zh)

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Application Number Priority Date Filing Date Title
JP2011217897 2011-09-30

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TW201324930A TW201324930A (zh) 2013-06-16
TWI608649B true TWI608649B (zh) 2017-12-11

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TW105125447A TWI623131B (zh) 2011-09-30 2012-09-28 能量貯存裝置以及能量貯存裝置的電極
TW108146493A TW202017232A (zh) 2011-09-30 2012-09-28 電極的製造方法
TW109125846A TWI792027B (zh) 2011-09-30 2012-09-28 鋰二次電池
TW113113729A TW202505791A (zh) 2011-09-30 2012-09-28 鋰二次電池
TW101135873A TWI608649B (zh) 2011-09-30 2012-09-28 石墨烯（ｇｒａｐｈｅｎｅ）和能量貯存裝置以及彼之製法
TW107105638A TWI669847B (zh) 2011-09-30 2012-09-28 電極的製造方法
TW112101359A TW202343854A (zh) 2011-09-30 2012-09-28 鋰二次電池
TW108119814A TWI705602B (zh) 2011-09-30 2012-09-28 電極的製造方法

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TW105125447A TWI623131B (zh) 2011-09-30 2012-09-28 能量貯存裝置以及能量貯存裝置的電極
TW108146493A TW202017232A (zh) 2011-09-30 2012-09-28 電極的製造方法
TW109125846A TWI792027B (zh) 2011-09-30 2012-09-28 鋰二次電池
TW113113729A TW202505791A (zh) 2011-09-30 2012-09-28 鋰二次電池

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TW107105638A TWI669847B (zh) 2011-09-30 2012-09-28 電極的製造方法
TW112101359A TW202343854A (zh) 2011-09-30 2012-09-28 鋰二次電池
TW108119814A TWI705602B (zh) 2011-09-30 2012-09-28 電極的製造方法

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US (7) US8883351B2 (enExample)
JP (12) JP6157820B2 (enExample)
KR (8) KR20190139332A (enExample)
CN (2) CN108101050B (enExample)
TW (8) TWI623131B (enExample)
WO (1) WO2013047630A1 (enExample)

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