TWI607810B - 製造半導氧化銦層的方法，此方法製造的氧化銦層以及其應用 - Google Patents

製造半導氧化銦層的方法，此方法製造的氧化銦層以及其應用 Download PDF

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Publication number
TWI607810B
TWI607810B TW099104484A TW99104484A TWI607810B TW I607810 B TWI607810 B TW I607810B TW 099104484 A TW099104484 A TW 099104484A TW 99104484 A TW99104484 A TW 99104484A TW I607810 B TWI607810 B TW I607810B
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TW
Taiwan
Prior art keywords
indium
alkoxide
oxide layer
indium oxide
iii
Prior art date
Application number
TW099104484A
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English (en)
Chinese (zh)
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TW201041662A (en
Inventor
爾恩 霍普
艾力克席 馬可洛夫
喬根 史堤格
德西 范
伊芳 達瑪夏克
哈克 席姆
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贏創德固賽有限責任公司
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Publication of TW201041662A publication Critical patent/TW201041662A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Chemically Coating (AREA)
  • Paints Or Removers (AREA)
  • Formation Of Insulating Films (AREA)
TW099104484A 2009-02-17 2010-02-11 製造半導氧化銦層的方法，此方法製造的氧化銦層以及其應用 TWI607810B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009009337A DE102009009337A1 (de) 2009-02-17 2009-02-17 Verfahren zur Herstellung halbleitender Indiumoxid-Schichten, nach dem Verfahren hergestellte Indiumoxid-Schichten und deren Verwendung

Publications (2)

Publication Number Publication Date
TW201041662A TW201041662A (en) 2010-12-01
TWI607810B true TWI607810B (zh) 2017-12-11

Family

ID=42289507

Family Applications (1)

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TW099104484A TWI607810B (zh) 2009-02-17 2010-02-11 製造半導氧化銦層的方法，此方法製造的氧化銦層以及其應用

Country Status (8)

Country Link
US (1) US9194046B2 (enExample)
EP (1) EP2398934B1 (enExample)
JP (2) JP5797561B2 (enExample)
KR (1) KR101738175B1 (enExample)
CN (1) CN102257177B (enExample)
DE (1) DE102009009337A1 (enExample)
TW (1) TWI607810B (enExample)
WO (1) WO2010094583A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007018431A1 (de) * 2007-04-19 2008-10-30 Evonik Degussa Gmbh Pyrogenes Zinkoxid enthaltender Verbund von Schichten und diesen Verbund aufweisender Feldeffekttransistor
DE102008058040A1 (de) * 2008-11-18 2010-05-27 Evonik Degussa Gmbh Formulierungen enthaltend ein Gemisch von ZnO-Cubanen und sie einsetzendes Verfahren zur Herstellung halbleitender ZnO-Schichten
DE102009009338A1 (de) 2009-02-17 2010-08-26 Evonik Degussa Gmbh Indiumalkoxid-haltige Zusammensetzungen, Verfahren zu ihrer Herstellung und ihre Verwendung
DE102009028802B3 (de) * 2009-08-21 2011-03-24 Evonik Degussa Gmbh Verfahren zur Herstellung Metalloxid-haltiger Schichten, nach dem Verfahren herstellbare Metalloxid-haltige Schicht und deren Verwendung
DE102009028801B3 (de) * 2009-08-21 2011-04-14 Evonik Degussa Gmbh Verfahren zur Herstellung Indiumoxid-haltiger Schichten, nach dem Verfahren herstellbare Indiumoxid-haltige Schicht und deren Verwendung
DE102009054998A1 (de) 2009-12-18 2011-06-22 Evonik Degussa GmbH, 45128 Verfahren zur Herstellung von Indiumchlordialkoxiden
DE102009054997B3 (de) 2009-12-18 2011-06-01 Evonik Degussa Gmbh Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung
DE102010031592A1 (de) 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten
DE102010031895A1 (de) 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten
DE102010043668B4 (de) 2010-11-10 2012-06-21 Evonik Degussa Gmbh Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung
DE102011084145A1 (de) 2011-10-07 2013-04-11 Evonik Degussa Gmbh Verfahren zur Herstellung von hochperformanten und elektrisch stabilen, halbleitenden Metalloxidschichten, nach dem Verfahren hergestellte Schichten und deren Verwendung
DE102011054615A1 (de) * 2011-10-19 2013-04-25 Nano-X Gmbh Verfahren zum Herstellen von härtbaren Werkstoffen
DE102012209918A1 (de) 2012-06-13 2013-12-19 Evonik Industries Ag Verfahren zur Herstellung Indiumoxid-haltiger Schichten
DE102013212018A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Metalloxid-Prekursoren, sie enthaltende Beschichtungszusammensetzungen, und ihre Verwendung
DE102013212017A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Verfahren zur Herstellung von Indiumalkoxid-Verbindungen, die nach dem Verfahren herstellbaren Indiumalkoxid-Verbindungen und ihre Verwendung
DE102013212019A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Formulierungen zur Herstellung Indiumoxid-haltiger Schichten, Verfahren zu ihrer Herstellung und ihre Verwendung
EP2874187B1 (en) 2013-11-15 2020-01-01 Evonik Operations GmbH Low contact resistance thin film transistor
DE102014202718A1 (de) 2014-02-14 2015-08-20 Evonik Degussa Gmbh Beschichtungszusammensetzung, Verfahren zu ihrer Herstellung und ihre Verwendung

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5342648A (en) * 1991-05-01 1994-08-30 The Regents Of The Universty Of California Method for forming amorphous ferroelectric materials
US20060166537A1 (en) * 2005-01-27 2006-07-27 Thompson John O Method of making a patterned metal oxide film
US20060188657A1 (en) * 2003-04-15 2006-08-24 Nobuo Kimura Method for producing organic thin film
JP2007042689A (ja) * 2005-07-29 2007-02-15 Fujifilm Holdings Corp 金属アルコキシド溶液、それを用いた半導体デバイスの製造方法及び半導体デバイス

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06136162A (ja) 1992-10-21 1994-05-17 Fujimori Kogyo Kk 金属酸化物薄膜の形成方法
CA2150724A1 (en) * 1992-12-15 1994-06-23 Akira Kaijou Transparent electrically conductive layer, electrically conductive transparent substrate and electrically conductive material
KR0149293B1 (ko) * 1995-05-10 1998-10-01 윤종용 투명 도전성 코팅 조성물
JPH09157855A (ja) 1995-12-06 1997-06-17 Kansai Shin Gijutsu Kenkyusho:Kk 金属酸化物薄膜の形成方法
EP0940368A1 (en) * 1997-05-26 1999-09-08 KRI International, Inc. PROCESS FOR PREPARING In 2?O 3?-SnO 2? PRECURSOR SOL AND PROCESS FOR PREPARING THIN FILM OF In 2?O 3?-SnO 2?
JPH11106935A (ja) 1997-09-30 1999-04-20 Fuji Photo Film Co Ltd 金属酸化物薄膜の製造方法及び金属酸化物薄膜
JPH11106934A (ja) 1997-09-30 1999-04-20 Fuji Photo Film Co Ltd 金属酸化物薄膜の製造方法及び金属酸化物薄膜
CN1101352C (zh) 2000-07-15 2003-02-12 昆明理工大学 铟锡氧化物薄膜溶胶—凝胶制备方法
JP4807933B2 (ja) * 2003-12-17 2011-11-02 株式会社アルバック 透明導電膜の形成方法及び透明電極
KR101025122B1 (ko) 2006-07-13 2011-03-25 도오까이 료가구 데쓰도오 가부시끼가이샤 도포액，도포액을 이용하여 형성한 산화티탄박막 및 그 형성방법
JP5116290B2 (ja) * 2006-11-21 2013-01-09 キヤノン株式会社 薄膜トランジスタの製造方法
JP4662075B2 (ja) * 2007-02-02 2011-03-30 株式会社ブリヂストン 薄膜トランジスタ及びその製造方法
DE102007013181B4 (de) 2007-03-20 2017-11-09 Evonik Degussa Gmbh Transparente, elektrisch leitfähige Schicht
DE102007018431A1 (de) 2007-04-19 2008-10-30 Evonik Degussa Gmbh Pyrogenes Zinkoxid enthaltender Verbund von Schichten und diesen Verbund aufweisender Feldeffekttransistor
DE102008058040A1 (de) 2008-11-18 2010-05-27 Evonik Degussa Gmbh Formulierungen enthaltend ein Gemisch von ZnO-Cubanen und sie einsetzendes Verfahren zur Herstellung halbleitender ZnO-Schichten
DE102009028801B3 (de) 2009-08-21 2011-04-14 Evonik Degussa Gmbh Verfahren zur Herstellung Indiumoxid-haltiger Schichten, nach dem Verfahren herstellbare Indiumoxid-haltige Schicht und deren Verwendung
DE102009028802B3 (de) 2009-08-21 2011-03-24 Evonik Degussa Gmbh Verfahren zur Herstellung Metalloxid-haltiger Schichten, nach dem Verfahren herstellbare Metalloxid-haltige Schicht und deren Verwendung
DE102009050703B3 (de) 2009-10-26 2011-04-21 Evonik Goldschmidt Gmbh Verfahren zur Selbstassemblierung elektrischer, elektronischer oder mikromechanischer Bauelemente auf einem Substrat und damit hergestelltes Erzeugnis

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5342648A (en) * 1991-05-01 1994-08-30 The Regents Of The Universty Of California Method for forming amorphous ferroelectric materials
US20060188657A1 (en) * 2003-04-15 2006-08-24 Nobuo Kimura Method for producing organic thin film
US20060166537A1 (en) * 2005-01-27 2006-07-27 Thompson John O Method of making a patterned metal oxide film
JP2007042689A (ja) * 2005-07-29 2007-02-15 Fujifilm Holdings Corp 金属アルコキシド溶液、それを用いた半導体デバイスの製造方法及び半導体デバイス

Also Published As

Publication number Publication date
JP2015228503A (ja) 2015-12-17
KR101738175B1 (ko) 2017-05-19
KR20110131180A (ko) 2011-12-06
CN102257177A (zh) 2011-11-23
DE102009009337A1 (de) 2010-08-19
JP5797561B2 (ja) 2015-10-21
WO2010094583A1 (de) 2010-08-26
US20110315982A1 (en) 2011-12-29
EP2398934A1 (de) 2011-12-28
US9194046B2 (en) 2015-11-24
CN102257177B (zh) 2014-06-18
JP6141362B2 (ja) 2017-06-07
EP2398934B1 (de) 2017-06-21
JP2012518088A (ja) 2012-08-09
TW201041662A (en) 2010-12-01

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