KR101738175B1 - 반도전성 산화인듐 층의 제조 방법, 상기 방법에 의해 제조된 산화인듐 층 및 그의 용도 - Google Patents

반도전성 산화인듐 층의 제조 방법, 상기 방법에 의해 제조된 산화인듐 층 및 그의 용도 Download PDF

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KR101738175B1
KR101738175B1 KR1020117019061A KR20117019061A KR101738175B1 KR 101738175 B1 KR101738175 B1 KR 101738175B1 KR 1020117019061 A KR1020117019061 A KR 1020117019061A KR 20117019061 A KR20117019061 A KR 20117019061A KR 101738175 B1 KR101738175 B1 KR 101738175B1
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Prior art keywords
indium
alkoxide
indium oxide
iii
oxide layer
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KR20110131180A (ko
Inventor
아르네 호페
알렉세이 메르쿠로브
위르겐 스타이거
두이 푸 팜
이폰네 다마쉐크
하이코 팀
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에보니크 데구사 게엠베하
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02697—Forming conducting materials on a substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Thin Film Transistor (AREA)
  • Chemically Coating (AREA)
  • Paints Or Removers (AREA)
  • Formation Of Insulating Films (AREA)
KR1020117019061A 2009-02-17 2010-02-05 반도전성 산화인듐 층의 제조 방법, 상기 방법에 의해 제조된 산화인듐 층 및 그의 용도 Expired - Fee Related KR101738175B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009009337.0 2009-02-17
DE102009009337A DE102009009337A1 (de) 2009-02-17 2009-02-17 Verfahren zur Herstellung halbleitender Indiumoxid-Schichten, nach dem Verfahren hergestellte Indiumoxid-Schichten und deren Verwendung
PCT/EP2010/051432 WO2010094583A1 (de) 2009-02-17 2010-02-05 Verfahren zur herstellung halbleitender indiumoxid-schichten, nach dem verfahren hergestellte indiumoxid-schichten und deren verwendung

Publications (2)

Publication Number Publication Date
KR20110131180A KR20110131180A (ko) 2011-12-06
KR101738175B1 true KR101738175B1 (ko) 2017-05-19

Family

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KR1020117019061A Expired - Fee Related KR101738175B1 (ko) 2009-02-17 2010-02-05 반도전성 산화인듐 층의 제조 방법, 상기 방법에 의해 제조된 산화인듐 층 및 그의 용도

Country Status (8)

Country Link
US (1) US9194046B2 (enExample)
EP (1) EP2398934B1 (enExample)
JP (2) JP5797561B2 (enExample)
KR (1) KR101738175B1 (enExample)
CN (1) CN102257177B (enExample)
DE (1) DE102009009337A1 (enExample)
TW (1) TWI607810B (enExample)
WO (1) WO2010094583A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007018431A1 (de) * 2007-04-19 2008-10-30 Evonik Degussa Gmbh Pyrogenes Zinkoxid enthaltender Verbund von Schichten und diesen Verbund aufweisender Feldeffekttransistor
DE102008058040A1 (de) * 2008-11-18 2010-05-27 Evonik Degussa Gmbh Formulierungen enthaltend ein Gemisch von ZnO-Cubanen und sie einsetzendes Verfahren zur Herstellung halbleitender ZnO-Schichten
DE102009009338A1 (de) 2009-02-17 2010-08-26 Evonik Degussa Gmbh Indiumalkoxid-haltige Zusammensetzungen, Verfahren zu ihrer Herstellung und ihre Verwendung
DE102009028801B3 (de) * 2009-08-21 2011-04-14 Evonik Degussa Gmbh Verfahren zur Herstellung Indiumoxid-haltiger Schichten, nach dem Verfahren herstellbare Indiumoxid-haltige Schicht und deren Verwendung
DE102009028802B3 (de) * 2009-08-21 2011-03-24 Evonik Degussa Gmbh Verfahren zur Herstellung Metalloxid-haltiger Schichten, nach dem Verfahren herstellbare Metalloxid-haltige Schicht und deren Verwendung
DE102009054997B3 (de) 2009-12-18 2011-06-01 Evonik Degussa Gmbh Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung
DE102009054998A1 (de) 2009-12-18 2011-06-22 Evonik Degussa GmbH, 45128 Verfahren zur Herstellung von Indiumchlordialkoxiden
DE102010031592A1 (de) 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten
DE102010031895A1 (de) 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten
DE102010043668B4 (de) * 2010-11-10 2012-06-21 Evonik Degussa Gmbh Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung
DE102011084145A1 (de) 2011-10-07 2013-04-11 Evonik Degussa Gmbh Verfahren zur Herstellung von hochperformanten und elektrisch stabilen, halbleitenden Metalloxidschichten, nach dem Verfahren hergestellte Schichten und deren Verwendung
DE102011054615A1 (de) * 2011-10-19 2013-04-25 Nano-X Gmbh Verfahren zum Herstellen von härtbaren Werkstoffen
DE102012209918A1 (de) 2012-06-13 2013-12-19 Evonik Industries Ag Verfahren zur Herstellung Indiumoxid-haltiger Schichten
DE102013212019A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Formulierungen zur Herstellung Indiumoxid-haltiger Schichten, Verfahren zu ihrer Herstellung und ihre Verwendung
DE102013212018A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Metalloxid-Prekursoren, sie enthaltende Beschichtungszusammensetzungen, und ihre Verwendung
DE102013212017A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Verfahren zur Herstellung von Indiumalkoxid-Verbindungen, die nach dem Verfahren herstellbaren Indiumalkoxid-Verbindungen und ihre Verwendung
EP2874187B1 (en) 2013-11-15 2020-01-01 Evonik Operations GmbH Low contact resistance thin film transistor
DE102014202718A1 (de) 2014-02-14 2015-08-20 Evonik Degussa Gmbh Beschichtungszusammensetzung, Verfahren zu ihrer Herstellung und ihre Verwendung

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100306565B1 (ko) * 1992-12-15 2001-11-30 도미나가 가즈토 투명도전막과그의제조방법,투명도전막이형성된도전성투명필름과도전성투명유리,및도전성재료
JP2007042689A (ja) * 2005-07-29 2007-02-15 Fujifilm Holdings Corp 金属アルコキシド溶液、それを用いた半導体デバイスの製造方法及び半導体デバイス
WO2008007469A1 (fr) 2006-07-13 2008-01-17 Central Japan Railway Company Fluide de revêtement, film mince conducteur formé à partir du fluide de revêtement, et procédé de formation de ce dernier
US20080233378A1 (en) 2007-03-20 2008-09-25 Degussa Gmbh Transparent, electrically conductive layer, a process for producing the layer and its use

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992019564A1 (en) * 1991-05-01 1992-11-12 The Regents Of The University Of California Amorphous ferroelectric materials
JPH06136162A (ja) 1992-10-21 1994-05-17 Fujimori Kogyo Kk 金属酸化物薄膜の形成方法
KR0149293B1 (ko) * 1995-05-10 1998-10-01 윤종용 투명 도전성 코팅 조성물
JPH09157855A (ja) 1995-12-06 1997-06-17 Kansai Shin Gijutsu Kenkyusho:Kk 金属酸化物薄膜の形成方法
US6235260B1 (en) * 1997-05-26 2001-05-22 Kri International, Inc. Method for producing In2O3—SnO2 precursor sol
JPH11106935A (ja) 1997-09-30 1999-04-20 Fuji Photo Film Co Ltd 金属酸化物薄膜の製造方法及び金属酸化物薄膜
JPH11106934A (ja) 1997-09-30 1999-04-20 Fuji Photo Film Co Ltd 金属酸化物薄膜の製造方法及び金属酸化物薄膜
CN1101352C (zh) 2000-07-15 2003-02-12 昆明理工大学 铟锡氧化物薄膜溶胶—凝胶制备方法
WO2004091810A1 (ja) * 2003-04-15 2004-10-28 Nippon Soda Co., Ltd. 有機薄膜製造方法
JP4807933B2 (ja) * 2003-12-17 2011-11-02 株式会社アルバック 透明導電膜の形成方法及び透明電極
US7381633B2 (en) * 2005-01-27 2008-06-03 Hewlett-Packard Development Company, L.P. Method of making a patterned metal oxide film
JP5116290B2 (ja) * 2006-11-21 2013-01-09 キヤノン株式会社 薄膜トランジスタの製造方法
JP4662075B2 (ja) * 2007-02-02 2011-03-30 株式会社ブリヂストン 薄膜トランジスタ及びその製造方法
DE102007018431A1 (de) 2007-04-19 2008-10-30 Evonik Degussa Gmbh Pyrogenes Zinkoxid enthaltender Verbund von Schichten und diesen Verbund aufweisender Feldeffekttransistor
DE102008058040A1 (de) 2008-11-18 2010-05-27 Evonik Degussa Gmbh Formulierungen enthaltend ein Gemisch von ZnO-Cubanen und sie einsetzendes Verfahren zur Herstellung halbleitender ZnO-Schichten
DE102009028801B3 (de) 2009-08-21 2011-04-14 Evonik Degussa Gmbh Verfahren zur Herstellung Indiumoxid-haltiger Schichten, nach dem Verfahren herstellbare Indiumoxid-haltige Schicht und deren Verwendung
DE102009028802B3 (de) 2009-08-21 2011-03-24 Evonik Degussa Gmbh Verfahren zur Herstellung Metalloxid-haltiger Schichten, nach dem Verfahren herstellbare Metalloxid-haltige Schicht und deren Verwendung
DE102009050703B3 (de) 2009-10-26 2011-04-21 Evonik Goldschmidt Gmbh Verfahren zur Selbstassemblierung elektrischer, elektronischer oder mikromechanischer Bauelemente auf einem Substrat und damit hergestelltes Erzeugnis

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100306565B1 (ko) * 1992-12-15 2001-11-30 도미나가 가즈토 투명도전막과그의제조방법,투명도전막이형성된도전성투명필름과도전성투명유리,및도전성재료
JP2007042689A (ja) * 2005-07-29 2007-02-15 Fujifilm Holdings Corp 金属アルコキシド溶液、それを用いた半導体デバイスの製造方法及び半導体デバイス
WO2008007469A1 (fr) 2006-07-13 2008-01-17 Central Japan Railway Company Fluide de revêtement, film mince conducteur formé à partir du fluide de revêtement, et procédé de formation de ce dernier
US20080233378A1 (en) 2007-03-20 2008-09-25 Degussa Gmbh Transparent, electrically conductive layer, a process for producing the layer and its use

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Publication number Publication date
TW201041662A (en) 2010-12-01
US9194046B2 (en) 2015-11-24
KR20110131180A (ko) 2011-12-06
WO2010094583A1 (de) 2010-08-26
JP5797561B2 (ja) 2015-10-21
JP2015228503A (ja) 2015-12-17
DE102009009337A1 (de) 2010-08-19
US20110315982A1 (en) 2011-12-29
CN102257177B (zh) 2014-06-18
JP6141362B2 (ja) 2017-06-07
JP2012518088A (ja) 2012-08-09
EP2398934A1 (de) 2011-12-28
EP2398934B1 (de) 2017-06-21
CN102257177A (zh) 2011-11-23
TWI607810B (zh) 2017-12-11

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