CN102257177B - 制造半导体氧化铟-层的方法，按照该方法制造的氧化铟-层及其应用 - Google Patents

制造半导体氧化铟-层的方法，按照该方法制造的氧化铟-层及其应用 Download PDF

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Publication number
CN102257177B
CN102257177B CN201080003638.0A CN201080003638A CN102257177B CN 102257177 B CN102257177 B CN 102257177B CN 201080003638 A CN201080003638 A CN 201080003638A CN 102257177 B CN102257177 B CN 102257177B
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indium
indium oxide
alkoxide
layer
och
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Chinese (zh)
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CN102257177A (zh
Inventor
A·霍佩
A·默库洛夫
J·施泰格
D·V·法姆
Y·达马舍克
H·蒂姆
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Evonik Operations GmbH
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Evonik Degussa GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02697—Forming conducting materials on a substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Thin Film Transistor (AREA)
  • Chemically Coating (AREA)
  • Paints Or Removers (AREA)
  • Formation Of Insulating Films (AREA)
CN201080003638.0A 2009-02-17 2010-02-05 制造半导体氧化铟-层的方法，按照该方法制造的氧化铟-层及其应用 Expired - Fee Related CN102257177B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009009337.0 2009-02-17
DE102009009337A DE102009009337A1 (de) 2009-02-17 2009-02-17 Verfahren zur Herstellung halbleitender Indiumoxid-Schichten, nach dem Verfahren hergestellte Indiumoxid-Schichten und deren Verwendung
PCT/EP2010/051432 WO2010094583A1 (de) 2009-02-17 2010-02-05 Verfahren zur herstellung halbleitender indiumoxid-schichten, nach dem verfahren hergestellte indiumoxid-schichten und deren verwendung

Publications (2)

Publication Number Publication Date
CN102257177A CN102257177A (zh) 2011-11-23
CN102257177B true CN102257177B (zh) 2014-06-18

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Country Link
US (1) US9194046B2 (enExample)
EP (1) EP2398934B1 (enExample)
JP (2) JP5797561B2 (enExample)
KR (1) KR101738175B1 (enExample)
CN (1) CN102257177B (enExample)
DE (1) DE102009009337A1 (enExample)
TW (1) TWI607810B (enExample)
WO (1) WO2010094583A1 (enExample)

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DE102007018431A1 (de) * 2007-04-19 2008-10-30 Evonik Degussa Gmbh Pyrogenes Zinkoxid enthaltender Verbund von Schichten und diesen Verbund aufweisender Feldeffekttransistor
DE102008058040A1 (de) * 2008-11-18 2010-05-27 Evonik Degussa Gmbh Formulierungen enthaltend ein Gemisch von ZnO-Cubanen und sie einsetzendes Verfahren zur Herstellung halbleitender ZnO-Schichten
DE102009009338A1 (de) 2009-02-17 2010-08-26 Evonik Degussa Gmbh Indiumalkoxid-haltige Zusammensetzungen, Verfahren zu ihrer Herstellung und ihre Verwendung
DE102009028802B3 (de) 2009-08-21 2011-03-24 Evonik Degussa Gmbh Verfahren zur Herstellung Metalloxid-haltiger Schichten, nach dem Verfahren herstellbare Metalloxid-haltige Schicht und deren Verwendung
DE102009028801B3 (de) * 2009-08-21 2011-04-14 Evonik Degussa Gmbh Verfahren zur Herstellung Indiumoxid-haltiger Schichten, nach dem Verfahren herstellbare Indiumoxid-haltige Schicht und deren Verwendung
DE102009054998A1 (de) 2009-12-18 2011-06-22 Evonik Degussa GmbH, 45128 Verfahren zur Herstellung von Indiumchlordialkoxiden
DE102009054997B3 (de) 2009-12-18 2011-06-01 Evonik Degussa Gmbh Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung
DE102010031895A1 (de) 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten
DE102010031592A1 (de) 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten
DE102010043668B4 (de) 2010-11-10 2012-06-21 Evonik Degussa Gmbh Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung
DE102011084145A1 (de) 2011-10-07 2013-04-11 Evonik Degussa Gmbh Verfahren zur Herstellung von hochperformanten und elektrisch stabilen, halbleitenden Metalloxidschichten, nach dem Verfahren hergestellte Schichten und deren Verwendung
DE102011054615A1 (de) * 2011-10-19 2013-04-25 Nano-X Gmbh Verfahren zum Herstellen von härtbaren Werkstoffen
DE102012209918A1 (de) 2012-06-13 2013-12-19 Evonik Industries Ag Verfahren zur Herstellung Indiumoxid-haltiger Schichten
DE102013212019A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Formulierungen zur Herstellung Indiumoxid-haltiger Schichten, Verfahren zu ihrer Herstellung und ihre Verwendung
DE102013212018A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Metalloxid-Prekursoren, sie enthaltende Beschichtungszusammensetzungen, und ihre Verwendung
DE102013212017A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Verfahren zur Herstellung von Indiumalkoxid-Verbindungen, die nach dem Verfahren herstellbaren Indiumalkoxid-Verbindungen und ihre Verwendung
EP2874187B1 (en) 2013-11-15 2020-01-01 Evonik Operations GmbH Low contact resistance thin film transistor
DE102014202718A1 (de) 2014-02-14 2015-08-20 Evonik Degussa Gmbh Beschichtungszusammensetzung, Verfahren zu ihrer Herstellung und ihre Verwendung

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DE102008058040A1 (de) 2008-11-18 2010-05-27 Evonik Degussa Gmbh Formulierungen enthaltend ein Gemisch von ZnO-Cubanen und sie einsetzendes Verfahren zur Herstellung halbleitender ZnO-Schichten
DE102009028801B3 (de) 2009-08-21 2011-04-14 Evonik Degussa Gmbh Verfahren zur Herstellung Indiumoxid-haltiger Schichten, nach dem Verfahren herstellbare Indiumoxid-haltige Schicht und deren Verwendung
DE102009028802B3 (de) 2009-08-21 2011-03-24 Evonik Degussa Gmbh Verfahren zur Herstellung Metalloxid-haltiger Schichten, nach dem Verfahren herstellbare Metalloxid-haltige Schicht und deren Verwendung
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Publication number Publication date
JP5797561B2 (ja) 2015-10-21
TW201041662A (en) 2010-12-01
TWI607810B (zh) 2017-12-11
JP6141362B2 (ja) 2017-06-07
EP2398934A1 (de) 2011-12-28
EP2398934B1 (de) 2017-06-21
JP2015228503A (ja) 2015-12-17
DE102009009337A1 (de) 2010-08-19
KR101738175B1 (ko) 2017-05-19
WO2010094583A1 (de) 2010-08-26
JP2012518088A (ja) 2012-08-09
CN102257177A (zh) 2011-11-23
US20110315982A1 (en) 2011-12-29
KR20110131180A (ko) 2011-12-06
US9194046B2 (en) 2015-11-24

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