TWI607286B - 用於ｅｕｖ投射微影之照射光學單元與光學系統 - Google Patents

用於ｅｕｖ投射微影之照射光學單元與光學系統 Download PDF

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Publication number
TWI607286B
TWI607286B TW102115781A TW102115781A TWI607286B TW I607286 B TWI607286 B TW I607286B TW 102115781 A TW102115781 A TW 102115781A TW 102115781 A TW102115781 A TW 102115781A TW I607286 B TWI607286 B TW I607286B
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TW
Taiwan
Prior art keywords
illumination
pupil
field
imaging
telecentric
Prior art date
Application number
TW102115781A
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English (en)
Chinese (zh)
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TW201411292A (zh
Inventor
約格 季摩曼
Original Assignee
卡爾蔡司Ｓｍｔ有限公司
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Publication of TW201411292A publication Critical patent/TW201411292A/zh
Application granted granted Critical
Publication of TWI607286B publication Critical patent/TWI607286B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Microscoopes, Condenser (AREA)
TW102115781A 2012-05-03 2013-05-02 用於ｅｕｖ投射微影之照射光學單元與光學系統 TWI607286B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102012207377A DE102012207377A1 (de) 2012-05-03 2012-05-03 Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie

Publications (2)

Publication Number Publication Date
TW201411292A TW201411292A (zh) 2014-03-16
TWI607286B true TWI607286B (zh) 2017-12-01

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
TW102115781A TWI607286B (zh) 2012-05-03 2013-05-02 用於ｅｕｖ投射微影之照射光學單元與光學系統
TW106136162A TWI633399B (zh) 2012-05-03 2013-05-02 用於ｅｕｖ投射微影之照射光學單元與光學系統

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW106136162A TWI633399B (zh) 2012-05-03 2013-05-02 用於ｅｕｖ投射微影之照射光學單元與光學系統

Country Status (6)

Country Link
US (2) US20150042974A1 (enExample)
JP (1) JP5979693B2 (enExample)
KR (1) KR102092365B1 (enExample)
DE (1) DE102012207377A1 (enExample)
TW (2) TWI607286B (enExample)
WO (1) WO2013164207A1 (enExample)

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DE102012207377A1 (de) 2012-05-03 2013-11-07 Carl Zeiss Smt Gmbh Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie
DE102014203188A1 (de) * 2014-02-21 2015-08-27 Carl Zeiss Smt Gmbh Verfahren zur Beleuchtung eines Objektfeldes einer Projektionsbelichtungsanlage
WO2016128253A1 (de) * 2015-02-11 2016-08-18 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die euv-projektionslithografie
US9875534B2 (en) * 2015-09-04 2018-01-23 Kla-Tencor Corporation Techniques and systems for model-based critical dimension measurements
DE102016222033A1 (de) 2016-11-10 2016-12-29 Carl Zeiss Smt Gmbh Verfahren zur Zuordnung von Feldfacetten zu Pupillenfacetten zur Schaffung von Beleuchtungslicht-Ausleuchtungskanälen in einem Be-leuchtungssystem in einer EUV-Projektionsbelichtungsanlage
ES2887976T3 (es) * 2017-09-08 2021-12-29 Tobii Ab Compensación del radio de la pupila
DE102019214269A1 (de) * 2019-09-19 2021-03-25 Carl Zeiss Smt Gmbh Facettenspiegel für eine Beleuchtungsoptik einer Projektionsbelichtungsanlage
DE102020210829A1 (de) 2020-08-27 2022-03-03 Carl Zeiss Smt Gmbh Pupillenfacettenspiegel für eine Beleuchtungsoptik einer Projektionsbelichtungsanlage
DE102021203961B3 (de) 2021-04-21 2022-08-25 Carl Zeiss Smt Gmbh Pupillenblende für eine Beleuchtungsoptik eines Metrologiesystems, Beleuchtungsoptik und Metrologiesystem
DE102021120952B3 (de) * 2021-08-11 2022-11-10 Carl Zeiss Smt Gmbh Verfahren zur Korrektur eines Telezentriefehlers einer Abbildungsvorrichtung und Maskeninspektionsmikroskop
DE102021213827A1 (de) * 2021-12-06 2023-06-07 Carl Zeiss Smt Gmbh Verfahren zur Optimierung einer Pupillen-Blendenform zur Nachbildung von Beleuchtungs- und Abbildungseigenschaften eines optischen Produktionssystems bei der Beleuchtung und Abbildung eines Objekts mittels eines optischen Messsystems

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TW201017344A (en) * 2008-09-29 2010-05-01 Zeiss Carl Smt Ag Microlithography projection exposure apparatus having at least two operating states

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DE10138313A1 (de) 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
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DE102010029765A1 (de) 2010-06-08 2011-12-08 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Projektionslithografie
EP2583138B1 (en) * 2010-06-15 2020-01-22 Carl Zeiss SMT GmbH Mask for euv lithography, euv lithography system and method for optimising the imaging of a mask
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Publication number Priority date Publication date Assignee Title
TW200900874A (en) * 2007-03-30 2009-01-01 Asml Netherlands Bv Lithographic apparatus and method
TW201017344A (en) * 2008-09-29 2010-05-01 Zeiss Carl Smt Ag Microlithography projection exposure apparatus having at least two operating states

Also Published As

Publication number Publication date
TW201411292A (zh) 2014-03-16
JP5979693B2 (ja) 2016-08-24
US20200041911A1 (en) 2020-02-06
US20150042974A1 (en) 2015-02-12
WO2013164207A1 (en) 2013-11-07
TW201805735A (zh) 2018-02-16
KR20150013660A (ko) 2015-02-05
KR102092365B1 (ko) 2020-03-24
US10976668B2 (en) 2021-04-13
DE102012207377A1 (de) 2013-11-07
TWI633399B (zh) 2018-08-21
JP2015517729A (ja) 2015-06-22

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