KR102092365B1 - Euv 투영 리소그래피용 조명 광학 유닛 및 광학 시스템 - Google Patents

Euv 투영 리소그래피용 조명 광학 유닛 및 광학 시스템 Download PDF

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KR102092365B1
KR102092365B1 KR1020147033758A KR20147033758A KR102092365B1 KR 102092365 B1 KR102092365 B1 KR 102092365B1 KR 1020147033758 A KR1020147033758 A KR 1020147033758A KR 20147033758 A KR20147033758 A KR 20147033758A KR 102092365 B1 KR102092365 B1 KR 102092365B1
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South Korea
Prior art keywords
illumination
imaging
pupil
optical unit
telecentricity
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KR20150013660A (ko
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요르그 짐머만
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칼 짜이스 에스엠티 게엠베하
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Microscoopes, Condenser (AREA)
KR1020147033758A 2012-05-03 2013-04-19 Euv 투영 리소그래피용 조명 광학 유닛 및 광학 시스템 Active KR102092365B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102012207377.9 2012-05-03
DE102012207377A DE102012207377A1 (de) 2012-05-03 2012-05-03 Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie
US201261642683P 2012-05-04 2012-05-04
US61/642,683 2012-05-04
PCT/EP2013/058171 WO2013164207A1 (en) 2012-05-03 2013-04-19 Illumination optical unit and optical system for euv projection lithography

Publications (2)

Publication Number Publication Date
KR20150013660A KR20150013660A (ko) 2015-02-05
KR102092365B1 true KR102092365B1 (ko) 2020-03-24

Family

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KR1020147033758A Active KR102092365B1 (ko) 2012-05-03 2013-04-19 Euv 투영 리소그래피용 조명 광학 유닛 및 광학 시스템

Country Status (6)

Country Link
US (2) US20150042974A1 (enExample)
JP (1) JP5979693B2 (enExample)
KR (1) KR102092365B1 (enExample)
DE (1) DE102012207377A1 (enExample)
TW (2) TWI607286B (enExample)
WO (1) WO2013164207A1 (enExample)

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DE102012207377A1 (de) 2012-05-03 2013-11-07 Carl Zeiss Smt Gmbh Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie
DE102014203188A1 (de) * 2014-02-21 2015-08-27 Carl Zeiss Smt Gmbh Verfahren zur Beleuchtung eines Objektfeldes einer Projektionsbelichtungsanlage
WO2016128253A1 (de) * 2015-02-11 2016-08-18 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die euv-projektionslithografie
US9875534B2 (en) * 2015-09-04 2018-01-23 Kla-Tencor Corporation Techniques and systems for model-based critical dimension measurements
DE102016222033A1 (de) 2016-11-10 2016-12-29 Carl Zeiss Smt Gmbh Verfahren zur Zuordnung von Feldfacetten zu Pupillenfacetten zur Schaffung von Beleuchtungslicht-Ausleuchtungskanälen in einem Be-leuchtungssystem in einer EUV-Projektionsbelichtungsanlage
ES2887976T3 (es) * 2017-09-08 2021-12-29 Tobii Ab Compensación del radio de la pupila
DE102019214269A1 (de) * 2019-09-19 2021-03-25 Carl Zeiss Smt Gmbh Facettenspiegel für eine Beleuchtungsoptik einer Projektionsbelichtungsanlage
DE102020210829A1 (de) 2020-08-27 2022-03-03 Carl Zeiss Smt Gmbh Pupillenfacettenspiegel für eine Beleuchtungsoptik einer Projektionsbelichtungsanlage
DE102021203961B3 (de) 2021-04-21 2022-08-25 Carl Zeiss Smt Gmbh Pupillenblende für eine Beleuchtungsoptik eines Metrologiesystems, Beleuchtungsoptik und Metrologiesystem
DE102021120952B3 (de) * 2021-08-11 2022-11-10 Carl Zeiss Smt Gmbh Verfahren zur Korrektur eines Telezentriefehlers einer Abbildungsvorrichtung und Maskeninspektionsmikroskop
DE102021213827A1 (de) * 2021-12-06 2023-06-07 Carl Zeiss Smt Gmbh Verfahren zur Optimierung einer Pupillen-Blendenform zur Nachbildung von Beleuchtungs- und Abbildungseigenschaften eines optischen Produktionssystems bei der Beleuchtung und Abbildung eines Objekts mittels eines optischen Messsystems

Citations (2)

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US20110063598A1 (en) * 2008-04-30 2011-03-17 Carl Zeiss Smt Gmbh Illumination optics for euv microlithography and related system and apparatus
WO2011157643A1 (en) * 2010-06-15 2011-12-22 Carl Zeiss Smt Gmbh Mask for euv lithography, euv lithography system and method for optimising the imaging of a mask

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US5680588A (en) * 1995-06-06 1997-10-21 International Business Machines Corporation Method and system for optimizing illumination in an optical photolithography projection imaging system
US6859515B2 (en) 1998-05-05 2005-02-22 Carl-Zeiss-Stiftung Trading Illumination system, particularly for EUV lithography
DE10138313A1 (de) 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
US6573975B2 (en) * 2001-04-04 2003-06-03 Pradeep K. Govil DUV scanner linewidth control by mask error factor compensation
US7042550B2 (en) * 2002-11-28 2006-05-09 Asml Netherlands B.V. Device manufacturing method and computer program
JP2004252358A (ja) * 2003-02-21 2004-09-09 Canon Inc 反射型投影光学系及び露光装置
EP1771771B1 (en) * 2004-07-14 2009-12-30 Carl Zeiss SMT AG Catadioptric projection objective
JP4701030B2 (ja) * 2005-07-22 2011-06-15 キヤノン株式会社 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム
DE102006059024A1 (de) * 2006-12-14 2008-06-19 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie, Beleuchtungsoptik für eine derartige Projektionsbelichtungsanlage, Verfahren zum Betrieb einer derartigen Projektionsbelichtungsanlage, Verfahren zur Herstellung eines mikrostrukturierten Bauteils sowie durch das Verfahren hergestelltes mikrostrukturiertes Bauteil
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DE102010029765A1 (de) 2010-06-08 2011-12-08 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Projektionslithografie
DE102010041746A1 (de) * 2010-09-30 2012-04-05 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage der EUV-Mikrolithographie und Verfahren zur mikrolithographischen Belichtung
DE102012207377A1 (de) 2012-05-03 2013-11-07 Carl Zeiss Smt Gmbh Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie

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US20110063598A1 (en) * 2008-04-30 2011-03-17 Carl Zeiss Smt Gmbh Illumination optics for euv microlithography and related system and apparatus
WO2011157643A1 (en) * 2010-06-15 2011-12-22 Carl Zeiss Smt Gmbh Mask for euv lithography, euv lithography system and method for optimising the imaging of a mask

Also Published As

Publication number Publication date
TW201411292A (zh) 2014-03-16
JP5979693B2 (ja) 2016-08-24
US20200041911A1 (en) 2020-02-06
US20150042974A1 (en) 2015-02-12
WO2013164207A1 (en) 2013-11-07
TW201805735A (zh) 2018-02-16
TWI607286B (zh) 2017-12-01
KR20150013660A (ko) 2015-02-05
US10976668B2 (en) 2021-04-13
DE102012207377A1 (de) 2013-11-07
TWI633399B (zh) 2018-08-21
JP2015517729A (ja) 2015-06-22

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