DE102012207377A1 - Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie - Google Patents
Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie Download PDFInfo
- Publication number
- DE102012207377A1 DE102012207377A1 DE102012207377A DE102012207377A DE102012207377A1 DE 102012207377 A1 DE102012207377 A1 DE 102012207377A1 DE 102012207377 A DE102012207377 A DE 102012207377A DE 102012207377 A DE102012207377 A DE 102012207377A DE 102012207377 A1 DE102012207377 A1 DE 102012207377A1
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- Germany
- Prior art keywords
- illumination
- pupil
- optics
- field
- imaged
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000005286 illumination Methods 0.000 title claims abstract description 237
- 230000003287 optical effect Effects 0.000 title claims abstract description 34
- 238000001459 lithography Methods 0.000 title claims abstract description 7
- 210000001747 pupil Anatomy 0.000 claims abstract description 147
- 238000003384 imaging method Methods 0.000 claims abstract description 41
- 230000003993 interaction Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000001419 dependent effect Effects 0.000 claims description 5
- 238000013507 mapping Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 2
- 238000009826 distribution Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 230000000875 corresponding effect Effects 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001393 microlithography Methods 0.000 description 2
- 238000013041 optical simulation Methods 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000005405 multipole Effects 0.000 description 1
- 230000035764 nutrition Effects 0.000 description 1
- 235000016709 nutrition Nutrition 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 230000001179 pupillary effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70125—Use of illumination settings tailored to particular mask patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Lenses (AREA)
- Microscoopes, Condenser (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102012207377A DE102012207377A1 (de) | 2012-05-03 | 2012-05-03 | Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie |
| KR1020147033758A KR102092365B1 (ko) | 2012-05-03 | 2013-04-19 | Euv 투영 리소그래피용 조명 광학 유닛 및 광학 시스템 |
| JP2015509363A JP5979693B2 (ja) | 2012-05-03 | 2013-04-19 | Ｅｕｖ投影リソグラフィのための照明光学ユニット及び光学系 |
| PCT/EP2013/058171 WO2013164207A1 (en) | 2012-05-03 | 2013-04-19 | Illumination optical unit and optical system for euv projection lithography |
| TW106136162A TWI633399B (zh) | 2012-05-03 | 2013-05-02 | 用於ｅｕｖ投射微影之照射光學單元與光學系統 |
| TW102115781A TWI607286B (zh) | 2012-05-03 | 2013-05-02 | 用於ｅｕｖ投射微影之照射光學單元與光學系統 |
| US14/510,725 US20150042974A1 (en) | 2012-05-03 | 2014-10-09 | Illumination optical unit and optical system for euv projection lithography |
| US16/598,408 US10976668B2 (en) | 2012-05-03 | 2019-10-10 | Illumination optical unit and optical system for EUV projection lithography |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102012207377A DE102012207377A1 (de) | 2012-05-03 | 2012-05-03 | Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102012207377A1 true DE102012207377A1 (de) | 2013-11-07 |
Family
ID=49384467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102012207377A Ceased DE102012207377A1 (de) | 2012-05-03 | 2012-05-03 | Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20150042974A1 (enExample) |
| JP (1) | JP5979693B2 (enExample) |
| KR (1) | KR102092365B1 (enExample) |
| DE (1) | DE102012207377A1 (enExample) |
| TW (2) | TWI607286B (enExample) |
| WO (1) | WO2013164207A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102016222033A1 (de) | 2016-11-10 | 2016-12-29 | Carl Zeiss Smt Gmbh | Verfahren zur Zuordnung von Feldfacetten zu Pupillenfacetten zur Schaffung von Beleuchtungslicht-Ausleuchtungskanälen in einem Be-leuchtungssystem in einer EUV-Projektionsbelichtungsanlage |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102012207377A1 (de) | 2012-05-03 | 2013-11-07 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie |
| DE102014203188A1 (de) * | 2014-02-21 | 2015-08-27 | Carl Zeiss Smt Gmbh | Verfahren zur Beleuchtung eines Objektfeldes einer Projektionsbelichtungsanlage |
| WO2016128253A1 (de) * | 2015-02-11 | 2016-08-18 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die euv-projektionslithografie |
| US9875534B2 (en) * | 2015-09-04 | 2018-01-23 | Kla-Tencor Corporation | Techniques and systems for model-based critical dimension measurements |
| ES2887976T3 (es) * | 2017-09-08 | 2021-12-29 | Tobii Ab | Compensación del radio de la pupila |
| DE102019214269A1 (de) * | 2019-09-19 | 2021-03-25 | Carl Zeiss Smt Gmbh | Facettenspiegel für eine Beleuchtungsoptik einer Projektionsbelichtungsanlage |
| DE102020210829A1 (de) | 2020-08-27 | 2022-03-03 | Carl Zeiss Smt Gmbh | Pupillenfacettenspiegel für eine Beleuchtungsoptik einer Projektionsbelichtungsanlage |
| DE102021203961B3 (de) | 2021-04-21 | 2022-08-25 | Carl Zeiss Smt Gmbh | Pupillenblende für eine Beleuchtungsoptik eines Metrologiesystems, Beleuchtungsoptik und Metrologiesystem |
| DE102021120952B3 (de) * | 2021-08-11 | 2022-11-10 | Carl Zeiss Smt Gmbh | Verfahren zur Korrektur eines Telezentriefehlers einer Abbildungsvorrichtung und Maskeninspektionsmikroskop |
| DE102021213827A1 (de) * | 2021-12-06 | 2023-06-07 | Carl Zeiss Smt Gmbh | Verfahren zur Optimierung einer Pupillen-Blendenform zur Nachbildung von Beleuchtungs- und Abbildungseigenschaften eines optischen Produktionssystems bei der Beleuchtung und Abbildung eines Objekts mittels eines optischen Messsystems |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5420436A (en) | 1992-11-27 | 1995-05-30 | Hitachi, Ltd. | Methods for measuring optical system, and method and apparatus for exposure using said measuring method |
| EP1225481A2 (de) | 2001-01-23 | 2002-07-24 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | Kollektor für Beleuchtungssysteme mit einer Wellenlänge 193 nm |
| US20040137677A1 (en) * | 2002-11-28 | 2004-07-15 | Asml Netherlands B.V. | Device manufacturing method and computer program |
| US6859515B2 (en) | 1998-05-05 | 2005-02-22 | Carl-Zeiss-Stiftung Trading | Illumination system, particularly for EUV lithography |
| DE102007019570A1 (de) | 2007-04-25 | 2008-10-30 | Carl Zeiss Smt Ag | Spiegelanordnung, Kontaktierungsanordnung und optisches System |
| US20090097001A1 (en) * | 2007-10-15 | 2009-04-16 | Qimonda Ag | Non-Telecentric Lithography Apparatus and Method of Manufacturing Integrated Circuits |
| DE102008000990B3 (de) | 2008-04-04 | 2009-11-05 | Carl Zeiss Smt Ag | Vorrichtung zur mikrolithographischen Projektionsbelichtung und Verfahren zum Prüfen einer derartigen Vorrichtung |
| DE102010003167A1 (de) | 2009-05-29 | 2010-10-14 | Carl Zeiss Smt Ag | Verfahren zum Betreiben einer mikrolithographischen Projektionsbelichtungsanlage, sowie Beleuchtungseinrichtung |
| WO2011076500A1 (en) | 2009-12-23 | 2011-06-30 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2011154244A1 (en) | 2010-06-08 | 2011-12-15 | Carl Zeiss Smt Gmbh | Illumination optical system for euv projection lithography |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5680588A (en) * | 1995-06-06 | 1997-10-21 | International Business Machines Corporation | Method and system for optimizing illumination in an optical photolithography projection imaging system |
| US6573975B2 (en) * | 2001-04-04 | 2003-06-03 | Pradeep K. Govil | DUV scanner linewidth control by mask error factor compensation |
| JP2004252358A (ja) * | 2003-02-21 | 2004-09-09 | Canon Inc | 反射型投影光学系及び露光装置 |
| EP1771771B1 (en) * | 2004-07-14 | 2009-12-30 | Carl Zeiss SMT AG | Catadioptric projection objective |
| JP4701030B2 (ja) * | 2005-07-22 | 2011-06-15 | キヤノン株式会社 | 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム |
| DE102006059024A1 (de) * | 2006-12-14 | 2008-06-19 | Carl Zeiss Smt Ag | Projektionsbelichtungsanlage für die Mikrolithographie, Beleuchtungsoptik für eine derartige Projektionsbelichtungsanlage, Verfahren zum Betrieb einer derartigen Projektionsbelichtungsanlage, Verfahren zur Herstellung eines mikrostrukturierten Bauteils sowie durch das Verfahren hergestelltes mikrostrukturiertes Bauteil |
| US8937706B2 (en) * | 2007-03-30 | 2015-01-20 | Asml Netherlands B.V. | Lithographic apparatus and method |
| JP2009043933A (ja) | 2007-08-08 | 2009-02-26 | Canon Inc | 露光装置、調整方法、露光方法及びデバイス製造方法 |
| DE102008001511A1 (de) * | 2008-04-30 | 2009-11-05 | Carl Zeiss Smt Ag | Beleuchtungsoptik für die EUV-Mikrolithografie sowie Beleuchtungssystem und Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik |
| DE102008042438B4 (de) * | 2008-09-29 | 2010-11-04 | Carl Zeiss Smt Ag | Mikrolithographie-Projektionsbelichtungsanlage mit mindestens zwei Arbeitszuständen |
| WO2010108516A1 (en) * | 2009-03-27 | 2010-09-30 | Carl Zeiss Smt Ag | Illumination optical system for euv microlithography and euv attenuator for an illumination optical system of this kind, illumination system and projection exposure installation having an illumination optical system of this kind |
| WO2011006522A1 (en) * | 2009-07-17 | 2011-01-20 | Carl Zeiss Smt Gmbh | Microlithographic projection exposure apparatus and method of measuring a parameter related to an optical surface contained therein |
| DE102009054540B4 (de) | 2009-12-11 | 2011-11-10 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die EUV-Mikrolithographie |
| EP2583138B1 (en) * | 2010-06-15 | 2020-01-22 | Carl Zeiss SMT GmbH | Mask for euv lithography, euv lithography system and method for optimising the imaging of a mask |
| DE102010041746A1 (de) * | 2010-09-30 | 2012-04-05 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage der EUV-Mikrolithographie und Verfahren zur mikrolithographischen Belichtung |
| DE102012207377A1 (de) | 2012-05-03 | 2013-11-07 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie |
-
2012
- 2012-05-03 DE DE102012207377A patent/DE102012207377A1/de not_active Ceased
-
2013
- 2013-04-19 JP JP2015509363A patent/JP5979693B2/ja active Active
- 2013-04-19 WO PCT/EP2013/058171 patent/WO2013164207A1/en not_active Ceased
- 2013-04-19 KR KR1020147033758A patent/KR102092365B1/ko active Active
- 2013-05-02 TW TW102115781A patent/TWI607286B/zh active
- 2013-05-02 TW TW106136162A patent/TWI633399B/zh active
-
2014
- 2014-10-09 US US14/510,725 patent/US20150042974A1/en not_active Abandoned
-
2019
- 2019-10-10 US US16/598,408 patent/US10976668B2/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5420436A (en) | 1992-11-27 | 1995-05-30 | Hitachi, Ltd. | Methods for measuring optical system, and method and apparatus for exposure using said measuring method |
| US6859515B2 (en) | 1998-05-05 | 2005-02-22 | Carl-Zeiss-Stiftung Trading | Illumination system, particularly for EUV lithography |
| EP1225481A2 (de) | 2001-01-23 | 2002-07-24 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | Kollektor für Beleuchtungssysteme mit einer Wellenlänge 193 nm |
| US20040137677A1 (en) * | 2002-11-28 | 2004-07-15 | Asml Netherlands B.V. | Device manufacturing method and computer program |
| DE102007019570A1 (de) | 2007-04-25 | 2008-10-30 | Carl Zeiss Smt Ag | Spiegelanordnung, Kontaktierungsanordnung und optisches System |
| US20090097001A1 (en) * | 2007-10-15 | 2009-04-16 | Qimonda Ag | Non-Telecentric Lithography Apparatus and Method of Manufacturing Integrated Circuits |
| DE102008000990B3 (de) | 2008-04-04 | 2009-11-05 | Carl Zeiss Smt Ag | Vorrichtung zur mikrolithographischen Projektionsbelichtung und Verfahren zum Prüfen einer derartigen Vorrichtung |
| DE102010003167A1 (de) | 2009-05-29 | 2010-10-14 | Carl Zeiss Smt Ag | Verfahren zum Betreiben einer mikrolithographischen Projektionsbelichtungsanlage, sowie Beleuchtungseinrichtung |
| WO2011076500A1 (en) | 2009-12-23 | 2011-06-30 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2011154244A1 (en) | 2010-06-08 | 2011-12-15 | Carl Zeiss Smt Gmbh | Illumination optical system for euv projection lithography |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102016222033A1 (de) | 2016-11-10 | 2016-12-29 | Carl Zeiss Smt Gmbh | Verfahren zur Zuordnung von Feldfacetten zu Pupillenfacetten zur Schaffung von Beleuchtungslicht-Ausleuchtungskanälen in einem Be-leuchtungssystem in einer EUV-Projektionsbelichtungsanlage |
| DE102017212919A1 (de) | 2016-11-10 | 2018-05-17 | Carl Zeiss Smt Gmbh | Verfahren zur Zuordnung von Feldfacetten zu Pupillenfacetten zur Schaffung von Beleuchtungslicht-Ausleuchtungskanälen in einem Beleuchtungssystem in einer EUV-Projektionsbelichtungsanlage |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201411292A (zh) | 2014-03-16 |
| JP5979693B2 (ja) | 2016-08-24 |
| US20200041911A1 (en) | 2020-02-06 |
| US20150042974A1 (en) | 2015-02-12 |
| WO2013164207A1 (en) | 2013-11-07 |
| TW201805735A (zh) | 2018-02-16 |
| TWI607286B (zh) | 2017-12-01 |
| KR20150013660A (ko) | 2015-02-05 |
| KR102092365B1 (ko) | 2020-03-24 |
| US10976668B2 (en) | 2021-04-13 |
| TWI633399B (zh) | 2018-08-21 |
| JP2015517729A (ja) | 2015-06-22 |
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