TWI606261B - 用於ｅｕｖ微影的投影透鏡、膜構件及製造包含膜構件的投影透鏡的方法 - Google Patents

用於ｅｕｖ微影的投影透鏡、膜構件及製造包含膜構件的投影透鏡的方法 Download PDF

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Publication number
TWI606261B
TWI606261B TW102105232A TW102105232A TWI606261B TW I606261 B TWI606261 B TW I606261B TW 102105232 A TW102105232 A TW 102105232A TW 102105232 A TW102105232 A TW 102105232A TW I606261 B TWI606261 B TW I606261B
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TW
Taiwan
Prior art keywords
layer
film
projection lens
plane
projection
Prior art date
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TW102105232A
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English (en)
Chinese (zh)
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TW201337324A (zh
Inventor
鮑瑞斯 畢特納
諾伯特 瓦伯拉
桑賈 舒納德
舒默 瑞卡達
漢立克 瓦格納
克里斯汀 沃德
魯門 艾柳
湯瑪士 斯奇凱坦茲
托拉夫 葛納
華特 包爾斯
霍格爾 舒密特
羅斯 馬賽厄斯
Original Assignee
卡爾蔡司Ｓｍｔ有限公司
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Publication of TW201337324A publication Critical patent/TW201337324A/zh
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Publication of TWI606261B publication Critical patent/TWI606261B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0892—Catadioptric systems specially adapted for the UV
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0896—Catadioptric systems with variable magnification or multiple imaging planes, including multispectral systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW102105232A 2012-02-10 2013-02-08 用於ｅｕｖ微影的投影透鏡、膜構件及製造包含膜構件的投影透鏡的方法 TWI606261B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102012202057.8A DE102012202057B4 (de) 2012-02-10 2012-02-10 Projektionsobjektiv für EUV-Mikrolithographie, Folienelement und Verfahren zur Herstellung eines Projektionsobjektivs mit Folienelement

Publications (2)

Publication Number Publication Date
TW201337324A TW201337324A (zh) 2013-09-16
TWI606261B true TWI606261B (zh) 2017-11-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW102105232A TWI606261B (zh) 2012-02-10 2013-02-08 用於ｅｕｖ微影的投影透鏡、膜構件及製造包含膜構件的投影透鏡的方法

Country Status (7)

Country Link
US (1) US10001631B2 (enExample)
JP (1) JP6294835B2 (enExample)
KR (1) KR102079149B1 (enExample)
CN (1) CN104136999B (enExample)
DE (1) DE102012202057B4 (enExample)
TW (1) TWI606261B (enExample)
WO (1) WO2013117343A1 (enExample)

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KR102598505B1 (ko) 2015-05-20 2023-11-06 칼 짜이스 에스엠테 게엠베하 이미징 광학 시스템용 측정 방법 및 측정 배열체
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Also Published As

Publication number Publication date
US20170261730A9 (en) 2017-09-14
JP6294835B2 (ja) 2018-03-14
DE102012202057B4 (de) 2021-07-08
KR102079149B1 (ko) 2020-02-19
US20140347721A1 (en) 2014-11-27
KR20140130117A (ko) 2014-11-07
US10001631B2 (en) 2018-06-19
CN104136999A (zh) 2014-11-05
DE102012202057A1 (de) 2013-08-14
WO2013117343A1 (en) 2013-08-15
CN104136999B (zh) 2017-07-28
TW201337324A (zh) 2013-09-16
JP2015508231A (ja) 2015-03-16

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