JP6294835B2 - Ｅｕｖマイクロリソグラフィ用投影レンズ、フィルム素子及びフィルム素子を備える投影レンズの製造方法 - Google Patents
Ｅｕｖマイクロリソグラフィ用投影レンズ、フィルム素子及びフィルム素子を備える投影レンズの製造方法 Download PDFInfo
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- JP6294835B2 JP6294835B2 JP2014555979A JP2014555979A JP6294835B2 JP 6294835 B2 JP6294835 B2 JP 6294835B2 JP 2014555979 A JP2014555979 A JP 2014555979A JP 2014555979 A JP2014555979 A JP 2014555979A JP 6294835 B2 JP6294835 B2 JP 6294835B2
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- projection lens
- film element
- projection
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0892—Catadioptric systems specially adapted for the UV
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0896—Catadioptric systems with variable magnification or multiple imaging planes, including multispectral systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Lenses (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261597510P | 2012-02-10 | 2012-02-10 | |
| US61/597,510 | 2012-02-10 | ||
| DE102012202057.8 | 2012-02-10 | ||
| DE102012202057.8A DE102012202057B4 (de) | 2012-02-10 | 2012-02-10 | Projektionsobjektiv für EUV-Mikrolithographie, Folienelement und Verfahren zur Herstellung eines Projektionsobjektivs mit Folienelement |
| PCT/EP2013/000382 WO2013117343A1 (en) | 2012-02-10 | 2013-02-08 | Projection lens for euv microlithography, film element and method for producing a projection lens comprising a film element |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015508231A JP2015508231A (ja) | 2015-03-16 |
| JP2015508231A5 JP2015508231A5 (enExample) | 2016-03-24 |
| JP6294835B2 true JP6294835B2 (ja) | 2018-03-14 |
Family
ID=48868329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014555979A Active JP6294835B2 (ja) | 2012-02-10 | 2013-02-08 | Ｅｕｖマイクロリソグラフィ用投影レンズ、フィルム素子及びフィルム素子を備える投影レンズの製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10001631B2 (enExample) |
| JP (1) | JP6294835B2 (enExample) |
| KR (1) | KR102079149B1 (enExample) |
| CN (1) | CN104136999B (enExample) |
| DE (1) | DE102012202057B4 (enExample) |
| TW (1) | TWI606261B (enExample) |
| WO (1) | WO2013117343A1 (enExample) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102014204660A1 (de) * | 2014-03-13 | 2015-09-17 | Carl Zeiss Smt Gmbh | Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage |
| DE102014208039A1 (de) | 2014-04-29 | 2014-09-18 | Carl Zeiss Smt Gmbh | Diffraktive und refraktive optische Elemente für EUV - Optiksysteme |
| DE102014209348A1 (de) * | 2014-05-16 | 2015-11-19 | Carl Zeiss Smt Gmbh | Ermittlung einer korrigierten Größe |
| JP6715241B2 (ja) | 2014-06-06 | 2020-07-01 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置の光学系 |
| DE102015207153A1 (de) | 2015-04-20 | 2016-10-20 | Carl Zeiss Smt Gmbh | Wellenfrontkorrekturelement zur Verwendung in einem optischen System |
| TWI575299B (zh) * | 2015-05-08 | 2017-03-21 | 中強光電股份有限公司 | 照明系統以及投影裝置 |
| DE102015209051B4 (de) * | 2015-05-18 | 2018-08-30 | Carl Zeiss Smt Gmbh | Projektionsobjektiv mit Wellenfrontmanipulator sowie Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage |
| DE102015209173B4 (de) * | 2015-05-20 | 2018-11-08 | Carl Zeiss Smt Gmbh | Verfahren zum herstellen eines objektivs für eine lithographieanlage |
| DE102015220588A1 (de) * | 2015-10-22 | 2017-04-27 | Carl Zeiss Smt Gmbh | Messverfahren und Messanordnung für ein abbildendes optisches System |
| KR102598505B1 (ko) | 2015-05-20 | 2023-11-06 | 칼 짜이스 에스엠테 게엠베하 | 이미징 광학 시스템용 측정 방법 및 측정 배열체 |
| CN105022235B (zh) * | 2015-07-15 | 2017-04-05 | 中国科学院长春光学精密机械与物理研究所 | 具有半波带结构的极紫外光源收集镜的制作方法 |
| DE102015219671A1 (de) * | 2015-10-12 | 2017-04-27 | Carl Zeiss Smt Gmbh | Optische Baugruppe, Projektionssystem, Metrologiesystem und EUV-Lithographieanlage |
| DE102015221209A1 (de) | 2015-10-29 | 2017-05-04 | Carl Zeiss Smt Gmbh | Optische Baugruppe mit einem Schutzelement und optische Anordnung damit |
| DE102015221983A1 (de) * | 2015-11-09 | 2017-05-11 | Carl Zeiss Smt Gmbh | Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen abbildenden Optik |
| US10254640B2 (en) * | 2016-02-16 | 2019-04-09 | AGC Inc. | Reflective element for mask blank and process for producing reflective element for mask blank |
| DE102017202861A1 (de) | 2017-02-22 | 2017-04-13 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage mit multifunktionalem Pellikel und Verfahren zur Herstellung der Projektionsbelichtungsanlage |
| DE102017203246A1 (de) | 2017-02-28 | 2018-08-30 | Carl Zeiss Smt Gmbh | Verfahren zur Korrektur eines Spiegels für den Wellenlängenbereich von 5 nm bis 20 nm |
| DE102017211443A1 (de) * | 2017-07-05 | 2019-01-10 | Carl Zeiss Smt Gmbh | Metrologiesystem mit einer EUV-Optik |
| WO2019057583A1 (en) * | 2017-09-20 | 2019-03-28 | Asml Netherlands B.V. | CONTROL SYSTEM FOR LITHOGRAPHIC APPARATUS |
| NL2021357A (en) * | 2018-01-31 | 2018-08-16 | Asml Netherlands Bv | Two-dimensional diffraction grating |
| DE102018201495A1 (de) * | 2018-01-31 | 2019-01-10 | Carl Zeiss Smt Gmbh | Abbildendes optisches System für die Mikrolithographie |
| DE102019209575A1 (de) | 2018-07-04 | 2020-01-09 | Carl Zeiss Smt Gmbh | Verfahren zum Verändern einer Oberflächenform mittels Teilchenbestrahlung |
| DE102018213690A1 (de) | 2018-08-14 | 2019-08-01 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie |
| EP3629085A1 (en) * | 2018-09-25 | 2020-04-01 | ASML Netherlands B.V. | Method and apparatus for measuring pupil shape |
| KR20210152478A (ko) * | 2019-04-17 | 2021-12-15 | 에이에스엠엘 네델란즈 비.브이. | 오염 트랩 |
| DE102020207566B4 (de) | 2020-06-18 | 2023-02-16 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zur Charakterisierung einer Maske für die Mikrolithographie |
| DE102021204179A1 (de) | 2021-04-27 | 2022-04-21 | Carl Zeiss Smt Gmbh | Verfahren zur Optimierung eines Metrologiesystems zur Vermessung einer Lithografiemaske sowie Metrologiesystem |
| DE102021211975A1 (de) | 2021-10-25 | 2023-04-27 | Carl Zeiss Smt Gmbh | Verfahren zur Nachbildung einer Ziel-Wellenfront eines abbildenden optischen Produktions-Systems sowie Metrologiesystem zur Durchführung des Verfahrens |
| DE102022100591B9 (de) | 2022-01-12 | 2023-10-26 | Carl Zeiss Smt Gmbh | Optisches System, insbesondere zur Charakterisierung einer Maske für die Mikrolithographie, und Strahlteiler zur Verwendung in einem solchen optischen System |
| DE102022210352A1 (de) | 2022-09-29 | 2024-04-04 | Carl Zeiss Smt Gmbh | EUV-Reflektometer und Messverfahren |
| DE102023115801A1 (de) | 2023-06-16 | 2024-12-19 | Carl Zeiss Smt Gmbh | Verfahren zur Herstellung eines Projektionsobjektivs, Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren |
| DE102023208017A1 (de) * | 2023-08-22 | 2025-02-27 | Carl Zeiss Smt Gmbh | Verfahren zum Überarbeiten eines optischen Elements, sowie optisches Element und optisches System |
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| DE19903807A1 (de) | 1998-05-05 | 1999-11-11 | Zeiss Carl Fa | Beleuchtungssystem insbesondere für die EUV-Lithographie |
| DE50208750D1 (de) * | 2001-08-01 | 2007-01-04 | Zeiss Carl Smt Ag | Reflektives Projektionsobjektiv für EUV-Photolithographie |
| US7027226B2 (en) * | 2001-09-17 | 2006-04-11 | Euv Llc | Diffractive optical element for extreme ultraviolet wavefront control |
| US7074527B2 (en) * | 2003-09-23 | 2006-07-11 | Freescale Semiconductor, Inc. | Method for fabricating a mask using a hardmask and method for making a semiconductor device using the same |
| SG112034A1 (en) * | 2003-11-06 | 2005-06-29 | Asml Netherlands Bv | Optical element, lithographic apparatus comprising such optical element and device manufacturing method |
| US7214950B2 (en) * | 2004-08-13 | 2007-05-08 | Intel Corporation | Transition radiation apparatus |
| US7372623B2 (en) | 2005-03-29 | 2008-05-13 | Asml Netherlands B.V. | Multi-layer spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby |
| JP2006278960A (ja) * | 2005-03-30 | 2006-10-12 | Canon Inc | 露光装置 |
| DE102005016591B4 (de) * | 2005-04-11 | 2009-11-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Transmissionsfilter für den EUV-Spektralbereich |
| JP5436853B2 (ja) | 2005-04-20 | 2014-03-05 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 投影露光系及び偏光光学素子 |
| JP2007027212A (ja) * | 2005-07-12 | 2007-02-01 | Canon Inc | フィルター、露光装置及びデバイス製造方法 |
| JP2007088237A (ja) * | 2005-09-22 | 2007-04-05 | Nikon Corp | 多層膜反射鏡及びｅｕｖ露光装置 |
| EP1950594A1 (de) | 2007-01-17 | 2008-07-30 | Carl Zeiss SMT AG | Abbildende Optik, Projektionsbelichtunsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik, Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage, durch das Herstellungsverfahren gefertigtes mikrostrukturiertes Bauelement sowie Verwendung einer derartigen abbildenden Optik |
| US8194322B2 (en) * | 2007-04-23 | 2012-06-05 | Nikon Corporation | Multilayer-film reflective mirror, exposure apparatus, device manufacturing method, and manufacturing method of multilayer-film reflective mirror |
| DE102008041436A1 (de) * | 2007-10-02 | 2009-04-09 | Carl Zeiss Smt Ag | Optisches Membranelement |
| EP2210147B1 (en) * | 2007-10-02 | 2013-05-22 | Universita Degli Studi Di Padova | Aperiodic multilayer structures |
| NL1036152A1 (nl) * | 2007-11-13 | 2009-07-01 | Asml Holding Nv | Thin film continuous spatially modulated grey attenuators and filters. |
| NL2002884A1 (nl) * | 2008-06-09 | 2009-12-10 | Asml Holding Nv | Particle detection on patterning devices with arbitrary patterns. |
| NL2003299A (en) * | 2008-08-28 | 2010-03-11 | Asml Netherlands Bv | Spectral purity filter and lithographic apparatus. |
| DE102008042356A1 (de) | 2008-09-25 | 2010-04-08 | Carl Zeiss Smt Ag | Projektionsbelichtungsanlage mit optimierter Justagemöglichkeit |
| JP2010097986A (ja) * | 2008-10-14 | 2010-04-30 | Nikon Corp | 投影光学系、露光装置、及びデバイス製造方法 |
| DE102009035583A1 (de) | 2009-07-29 | 2011-02-03 | Carl Zeiss Sms Gmbh | Vergrößernde abbildende Optik sowie Metrologiesystem mit einer derartigen abbildenden Optik |
| JP5590044B2 (ja) * | 2009-12-09 | 2014-09-17 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用光学部材 |
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| US20170261730A9 (en) | 2017-09-14 |
| TWI606261B (zh) | 2017-11-21 |
| DE102012202057B4 (de) | 2021-07-08 |
| KR102079149B1 (ko) | 2020-02-19 |
| US20140347721A1 (en) | 2014-11-27 |
| KR20140130117A (ko) | 2014-11-07 |
| US10001631B2 (en) | 2018-06-19 |
| CN104136999A (zh) | 2014-11-05 |
| DE102012202057A1 (de) | 2013-08-14 |
| WO2013117343A1 (en) | 2013-08-15 |
| CN104136999B (zh) | 2017-07-28 |
| TW201337324A (zh) | 2013-09-16 |
| JP2015508231A (ja) | 2015-03-16 |
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