CN104136999B - Euv微光刻的投射镜头、膜元件及制造包含膜元件的投射镜头的方法 - Google Patents

Euv微光刻的投射镜头、膜元件及制造包含膜元件的投射镜头的方法 Download PDF

Info

Publication number
CN104136999B
CN104136999B CN201380008896.1A CN201380008896A CN104136999B CN 104136999 B CN104136999 B CN 104136999B CN 201380008896 A CN201380008896 A CN 201380008896A CN 104136999 B CN104136999 B CN 104136999B
Authority
CN
China
Prior art keywords
layer
projection lens
film
membrane
layer thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201380008896.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN104136999A (zh
Inventor
B.比特纳
N.瓦布拉
S.施耐德
R.施耐德
H.瓦格纳
C.沃尔德
R.伊利尤
T.希克坦兹
T.格鲁纳
W.保罗斯
H.施密特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Publication of CN104136999A publication Critical patent/CN104136999A/zh
Application granted granted Critical
Publication of CN104136999B publication Critical patent/CN104136999B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0892—Catadioptric systems specially adapted for the UV
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0896—Catadioptric systems with variable magnification or multiple imaging planes, including multispectral systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201380008896.1A 2012-02-10 2013-02-08 Euv微光刻的投射镜头、膜元件及制造包含膜元件的投射镜头的方法 Active CN104136999B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261597510P 2012-02-10 2012-02-10
US61/597,510 2012-02-10
DE102012202057.8 2012-02-10
DE102012202057.8A DE102012202057B4 (de) 2012-02-10 2012-02-10 Projektionsobjektiv für EUV-Mikrolithographie, Folienelement und Verfahren zur Herstellung eines Projektionsobjektivs mit Folienelement
PCT/EP2013/000382 WO2013117343A1 (en) 2012-02-10 2013-02-08 Projection lens for euv microlithography, film element and method for producing a projection lens comprising a film element

Publications (2)

Publication Number Publication Date
CN104136999A CN104136999A (zh) 2014-11-05
CN104136999B true CN104136999B (zh) 2017-07-28

Family

ID=48868329

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380008896.1A Active CN104136999B (zh) 2012-02-10 2013-02-08 Euv微光刻的投射镜头、膜元件及制造包含膜元件的投射镜头的方法

Country Status (7)

Country Link
US (1) US10001631B2 (enExample)
JP (1) JP6294835B2 (enExample)
KR (1) KR102079149B1 (enExample)
CN (1) CN104136999B (enExample)
DE (1) DE102012202057B4 (enExample)
TW (1) TWI606261B (enExample)
WO (1) WO2013117343A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI855055B (zh) * 2019-04-17 2024-09-11 荷蘭商Ａｓｍｌ荷蘭公司 汙染捕捉器、用於輻射源中的碎片減少系統、用於產生輻射的輻射源、微影系統及製造用於輻射源之碎片減少系統中之汙染捕捉器的方法

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014204660A1 (de) * 2014-03-13 2015-09-17 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE102014208039A1 (de) 2014-04-29 2014-09-18 Carl Zeiss Smt Gmbh Diffraktive und refraktive optische Elemente für EUV - Optiksysteme
DE102014209348A1 (de) * 2014-05-16 2015-11-19 Carl Zeiss Smt Gmbh Ermittlung einer korrigierten Größe
JP6715241B2 (ja) 2014-06-06 2020-07-01 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の光学系
DE102015207153A1 (de) 2015-04-20 2016-10-20 Carl Zeiss Smt Gmbh Wellenfrontkorrekturelement zur Verwendung in einem optischen System
TWI575299B (zh) * 2015-05-08 2017-03-21 中強光電股份有限公司 照明系統以及投影裝置
DE102015209051B4 (de) * 2015-05-18 2018-08-30 Carl Zeiss Smt Gmbh Projektionsobjektiv mit Wellenfrontmanipulator sowie Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage
DE102015209173B4 (de) * 2015-05-20 2018-11-08 Carl Zeiss Smt Gmbh Verfahren zum herstellen eines objektivs für eine lithographieanlage
DE102015220588A1 (de) * 2015-10-22 2017-04-27 Carl Zeiss Smt Gmbh Messverfahren und Messanordnung für ein abbildendes optisches System
KR102598505B1 (ko) 2015-05-20 2023-11-06 칼 짜이스 에스엠테 게엠베하 이미징 광학 시스템용 측정 방법 및 측정 배열체
CN105022235B (zh) * 2015-07-15 2017-04-05 中国科学院长春光学精密机械与物理研究所 具有半波带结构的极紫外光源收集镜的制作方法
DE102015219671A1 (de) * 2015-10-12 2017-04-27 Carl Zeiss Smt Gmbh Optische Baugruppe, Projektionssystem, Metrologiesystem und EUV-Lithographieanlage
DE102015221209A1 (de) 2015-10-29 2017-05-04 Carl Zeiss Smt Gmbh Optische Baugruppe mit einem Schutzelement und optische Anordnung damit
DE102015221983A1 (de) * 2015-11-09 2017-05-11 Carl Zeiss Smt Gmbh Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen abbildenden Optik
US10254640B2 (en) * 2016-02-16 2019-04-09 AGC Inc. Reflective element for mask blank and process for producing reflective element for mask blank
DE102017202861A1 (de) 2017-02-22 2017-04-13 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage mit multifunktionalem Pellikel und Verfahren zur Herstellung der Projektionsbelichtungsanlage
DE102017203246A1 (de) 2017-02-28 2018-08-30 Carl Zeiss Smt Gmbh Verfahren zur Korrektur eines Spiegels für den Wellenlängenbereich von 5 nm bis 20 nm
DE102017211443A1 (de) * 2017-07-05 2019-01-10 Carl Zeiss Smt Gmbh Metrologiesystem mit einer EUV-Optik
WO2019057583A1 (en) * 2017-09-20 2019-03-28 Asml Netherlands B.V. CONTROL SYSTEM FOR LITHOGRAPHIC APPARATUS
NL2021357A (en) * 2018-01-31 2018-08-16 Asml Netherlands Bv Two-dimensional diffraction grating
DE102018201495A1 (de) * 2018-01-31 2019-01-10 Carl Zeiss Smt Gmbh Abbildendes optisches System für die Mikrolithographie
DE102019209575A1 (de) 2018-07-04 2020-01-09 Carl Zeiss Smt Gmbh Verfahren zum Verändern einer Oberflächenform mittels Teilchenbestrahlung
DE102018213690A1 (de) 2018-08-14 2019-08-01 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie
EP3629085A1 (en) * 2018-09-25 2020-04-01 ASML Netherlands B.V. Method and apparatus for measuring pupil shape
DE102020207566B4 (de) 2020-06-18 2023-02-16 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zur Charakterisierung einer Maske für die Mikrolithographie
DE102021204179A1 (de) 2021-04-27 2022-04-21 Carl Zeiss Smt Gmbh Verfahren zur Optimierung eines Metrologiesystems zur Vermessung einer Lithografiemaske sowie Metrologiesystem
DE102021211975A1 (de) 2021-10-25 2023-04-27 Carl Zeiss Smt Gmbh Verfahren zur Nachbildung einer Ziel-Wellenfront eines abbildenden optischen Produktions-Systems sowie Metrologiesystem zur Durchführung des Verfahrens
DE102022100591B9 (de) 2022-01-12 2023-10-26 Carl Zeiss Smt Gmbh Optisches System, insbesondere zur Charakterisierung einer Maske für die Mikrolithographie, und Strahlteiler zur Verwendung in einem solchen optischen System
DE102022210352A1 (de) 2022-09-29 2024-04-04 Carl Zeiss Smt Gmbh EUV-Reflektometer und Messverfahren
DE102023115801A1 (de) 2023-06-16 2024-12-19 Carl Zeiss Smt Gmbh Verfahren zur Herstellung eines Projektionsobjektivs, Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren
DE102023208017A1 (de) * 2023-08-22 2025-02-27 Carl Zeiss Smt Gmbh Verfahren zum Überarbeiten eines optischen Elements, sowie optisches Element und optisches System

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19903807A1 (de) 1998-05-05 1999-11-11 Zeiss Carl Fa Beleuchtungssystem insbesondere für die EUV-Lithographie
DE50208750D1 (de) * 2001-08-01 2007-01-04 Zeiss Carl Smt Ag Reflektives Projektionsobjektiv für EUV-Photolithographie
US7027226B2 (en) * 2001-09-17 2006-04-11 Euv Llc Diffractive optical element for extreme ultraviolet wavefront control
US7074527B2 (en) * 2003-09-23 2006-07-11 Freescale Semiconductor, Inc. Method for fabricating a mask using a hardmask and method for making a semiconductor device using the same
SG112034A1 (en) * 2003-11-06 2005-06-29 Asml Netherlands Bv Optical element, lithographic apparatus comprising such optical element and device manufacturing method
US7214950B2 (en) * 2004-08-13 2007-05-08 Intel Corporation Transition radiation apparatus
US7372623B2 (en) 2005-03-29 2008-05-13 Asml Netherlands B.V. Multi-layer spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby
JP2006278960A (ja) * 2005-03-30 2006-10-12 Canon Inc 露光装置
DE102005016591B4 (de) * 2005-04-11 2009-11-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Transmissionsfilter für den EUV-Spektralbereich
JP5436853B2 (ja) 2005-04-20 2014-03-05 カール・ツァイス・エスエムティー・ゲーエムベーハー 投影露光系及び偏光光学素子
JP2007027212A (ja) * 2005-07-12 2007-02-01 Canon Inc フィルター、露光装置及びデバイス製造方法
JP2007088237A (ja) * 2005-09-22 2007-04-05 Nikon Corp 多層膜反射鏡及びｅｕｖ露光装置
EP1950594A1 (de) 2007-01-17 2008-07-30 Carl Zeiss SMT AG Abbildende Optik, Projektionsbelichtunsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik, Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage, durch das Herstellungsverfahren gefertigtes mikrostrukturiertes Bauelement sowie Verwendung einer derartigen abbildenden Optik
US8194322B2 (en) * 2007-04-23 2012-06-05 Nikon Corporation Multilayer-film reflective mirror, exposure apparatus, device manufacturing method, and manufacturing method of multilayer-film reflective mirror
DE102008041436A1 (de) * 2007-10-02 2009-04-09 Carl Zeiss Smt Ag Optisches Membranelement
EP2210147B1 (en) * 2007-10-02 2013-05-22 Universita Degli Studi Di Padova Aperiodic multilayer structures
NL1036152A1 (nl) * 2007-11-13 2009-07-01 Asml Holding Nv Thin film continuous spatially modulated grey attenuators and filters.
NL2002884A1 (nl) * 2008-06-09 2009-12-10 Asml Holding Nv Particle detection on patterning devices with arbitrary patterns.
NL2003299A (en) * 2008-08-28 2010-03-11 Asml Netherlands Bv Spectral purity filter and lithographic apparatus.
DE102008042356A1 (de) 2008-09-25 2010-04-08 Carl Zeiss Smt Ag Projektionsbelichtungsanlage mit optimierter Justagemöglichkeit
JP2010097986A (ja) * 2008-10-14 2010-04-30 Nikon Corp 投影光学系、露光装置、及びデバイス製造方法
DE102009035583A1 (de) 2009-07-29 2011-02-03 Carl Zeiss Sms Gmbh Vergrößernde abbildende Optik sowie Metrologiesystem mit einer derartigen abbildenden Optik
JP5590044B2 (ja) * 2009-12-09 2014-09-17 旭硝子株式会社 Ｅｕｖリソグラフィ用光学部材

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI855055B (zh) * 2019-04-17 2024-09-11 荷蘭商Ａｓｍｌ荷蘭公司 汙染捕捉器、用於輻射源中的碎片減少系統、用於產生輻射的輻射源、微影系統及製造用於輻射源之碎片減少系統中之汙染捕捉器的方法

Also Published As

Publication number Publication date
US20170261730A9 (en) 2017-09-14
TWI606261B (zh) 2017-11-21
JP6294835B2 (ja) 2018-03-14
DE102012202057B4 (de) 2021-07-08
KR102079149B1 (ko) 2020-02-19
US20140347721A1 (en) 2014-11-27
KR20140130117A (ko) 2014-11-07
US10001631B2 (en) 2018-06-19
CN104136999A (zh) 2014-11-05
DE102012202057A1 (de) 2013-08-14
WO2013117343A1 (en) 2013-08-15
TW201337324A (zh) 2013-09-16
JP2015508231A (ja) 2015-03-16

Similar Documents

Publication Publication Date Title
CN104136999B (zh) Euv微光刻的投射镜头、膜元件及制造包含膜元件的投射镜头的方法
JP5475756B2 (ja) スペクトル純度フィルタを形成する方法
JP4876149B2 (ja) リソグラフィ装置における使用のためのスペクトル純度フィルタ
TWI534557B (zh) 微影裝置、光譜純度濾光器及元件製造方法
JP5637702B2 (ja) 露光装置およびデバイス製造方法
TW201415076A (zh) 組合反射鏡
CN102621815B (zh) 用于光刻设备的反射光学部件及器件制造方法
US9146475B2 (en) Projection exposure system and projection exposure method
US8836917B2 (en) Zone plate
CN102033436B (zh) 微光刻投射系统
JP6309535B2 (ja) Ｅｕｖリソグラフィー用反射性光学素子及びその製造方法
CN102047183B (zh) 多层反射镜和光刻设备
JP5888585B2 (ja) 反射結像光学系、露光装置、およびデバイス製造方法
JP2017505925A (ja) Ｅｕｖミラー及びｅｕｖミラーを備えた光学系
KR20120100996A (ko) 반사 결상 광학계, 노광 장치 및 디바이스 제조 방법
JP6551869B2 (ja) 照明光学系、露光装置、およびデバイス製造方法
JP2006284960A (ja) 回折格子、回折格子の製造方法、該回折格子を用いる露光方法、電子デバイス製造方法、電子デバイスおよび露光装置
JP7496367B2 (ja) リソグラフィ装置、計測装置、光学システムおよび方法
US20110043782A1 (en) Spectral purity filters for use in a lithographic apparatus

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CB03 Change of inventor or designer information

Inventor after: B.Bitner

Inventor after: W.Paul

Inventor after: H.Schmidt

Inventor after: M*Luo Shi

Inventor after: N.Vabula

Inventor after: S.Schneider

Inventor after: R*M*Shermer

Inventor after: H.Wagner

Inventor after: C.Wald

Inventor after: R.Illy

Inventor after: T.Sikatanz

Inventor after: T.Gruner

Inventor before: B.Bitner

Inventor before: W.Paul

Inventor before: H.Schmidt

Inventor before: N.Vabula

Inventor before: S.Schneider

Inventor before: R.Schneider

Inventor before: H.Wagner

Inventor before: C.Wald

Inventor before: R.Illy

Inventor before: T.Sikatanz

Inventor before: T.Gruner

CB03 Change of inventor or designer information