JP5436853B2 - 投影露光系及び偏光光学素子 - Google Patents
投影露光系及び偏光光学素子 Download PDFInfo
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- JP5436853B2 JP5436853B2 JP2008506975A JP2008506975A JP5436853B2 JP 5436853 B2 JP5436853 B2 JP 5436853B2 JP 2008506975 A JP2008506975 A JP 2008506975A JP 2008506975 A JP2008506975 A JP 2008506975A JP 5436853 B2 JP5436853 B2 JP 5436853B2
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- JP
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- Prior art keywords
- optical element
- light
- polarizing optical
- cone
- projection exposure
- Prior art date
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Polarising Elements (AREA)
Description
Claims (10)
- EUV領域の光を発生させるための光源(18)と、当該光源(18)の光によってマスク(25)を照明するための第1の光学系(19、20、21、22、23、24)と、構成部材(32)に前記マスク(25)を結像するための第2の光学系(26、27、28、29、30)とを備える、特にマイクロリソグラフィ用の投影露光系であって、前記光源(18)と前記構成部材(32)との間のビーム経路にEUV領域用の少なくとも一つの偏光光学素子(1)が配置され、当該少なくとも一つの偏光光学素子は、前記光源によって発せられた光に偏光作用を及ぼして当該光の接線偏光を生成する少なくとも一つの反射円錐面(3、7、12、14)を備える回転対称ミラー装置を含む、投影露光系。
- 前記偏光光学素子は、
0゜から前記円錐面(3)が偏光作用をもたらす最大傾斜角までの傾斜角αの領域に円錐面の回転対称軸への傾斜角αを下回って入射するEUV光の少なくとも所定の偏光成分に対して反射性を有する外側円錐面(3)を有する少なくとも一つの円錐体(2)を備え、および
前記円錐体(2)の外側円錐面(3)で反射されたEUV光を集束する少なくとも一つの別のEUV光用反射要素(4、11、13)を有する、請求項1に記載の投影露光系。 - 前記偏光光学素子は、
0゜から最大傾斜角までの傾斜角αの領域に別の円錐体(6)の円錐面の回転対称軸への傾斜角αを下回って入射するEUV光の少なくとも所定の偏光成分に対して反射性を有する外側円錐面(7)を有する少なくとも一つの別の円錐体(6)を備え、
両円錐体(2、6)の底面領域が相互に向かい合い、両円錐面(3、7)の回転対称軸が一致している、請求項1または2に記載の投影露光系。 - 前記少なくとも一つの別の要素(4)が中空円筒体として形成され、その内面(5)が反射性を有し、前記中空円筒体の回転対称軸が前記少なくとも一つの円錐体(2、6)の回転対称軸と一致するように配置された、請求項3に記載の投影露光系。
- 前記少なくとも一つの偏光光学素子の少なくとも一つの別の反射要素が、0゜から最大傾斜角までの傾斜角αの領域に円錐面の回転対称軸への傾斜角αを下回って入射するEUV光の少なくとも所定の偏光成分に対して反射性を有する二つの内側円錐面(12、14)を有している投影露光系であって、
両内側円錐面(12、14)が相互に向かい合い、両内側円錐面(12、14)の回転対称軸が一致しており、
入射したEUV光が初めに前記偏光外側円錐面(3)によって反射され、その後続いて両内側円錐面(12、14)によって反射され、その後前記別の円錐体(6)の外側円錐面(7)によって反射されるように前記円錐面(3、7、12、14)が配置された、請求項3に記載の投影露光系。 - 前記偏光光学素子の前記外側円錐面(3、7)および前記内側円錐面(12、14)が同一の円錐角を有する、請求項5に記載の投影露光系。
- 前記偏光光学素子の円錐角が45゜である、請求項5に記載の投影露光系。
- 請求項1〜7のいずれか一項に記載の投影露光系で動作するように適応させた、EUV領域用の偏光光学素子。
- 少なくとも一つの構成要素(2、4、6、11、13、16、17)を備え、伝播方向に交差して空間的に広がる光ビームの偏光状態に及ぼす前記構成要素の作用が光ビームの断面にわたって異なる、請求項8に記載の偏光光学素子。
- 伝播方向に交差して空間的に広がる光ビームの場合、光ビームの断面にわたって不均一な偏光分布を形成する少なくとも一つの構成要素(2、4、6、11、13、16、17)を備える、請求項8に記載の偏光光学素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US67363805P | 2005-04-20 | 2005-04-20 | |
US60/673,638 | 2005-04-20 | ||
PCT/EP2006/003401 WO2006111319A2 (en) | 2005-04-20 | 2006-04-12 | Projection exposure system, method for manufacturing a micro-structured structural member by the aid of such a projection exposure system and polarization-optical element adapted for use in such a system |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011278378A Division JP5480232B2 (ja) | 2005-04-20 | 2011-12-20 | 投影露光系、このような投影露光系の補助により微細構造の構成部材を製造する方法、このような系において使用するために適応させた偏光光学素子 |
Publications (3)
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JP2008538452A JP2008538452A (ja) | 2008-10-23 |
JP2008538452A5 JP2008538452A5 (ja) | 2009-04-30 |
JP5436853B2 true JP5436853B2 (ja) | 2014-03-05 |
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JP2008506975A Expired - Fee Related JP5436853B2 (ja) | 2005-04-20 | 2006-04-12 | 投影露光系及び偏光光学素子 |
JP2011278378A Active JP5480232B2 (ja) | 2005-04-20 | 2011-12-20 | 投影露光系、このような投影露光系の補助により微細構造の構成部材を製造する方法、このような系において使用するために適応させた偏光光学素子 |
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JP2011278378A Active JP5480232B2 (ja) | 2005-04-20 | 2011-12-20 | 投影露光系、このような投影露光系の補助により微細構造の構成部材を製造する方法、このような系において使用するために適応させた偏光光学素子 |
Country Status (4)
Country | Link |
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US (2) | US7982854B2 (ja) |
EP (1) | EP1872176A2 (ja) |
JP (2) | JP5436853B2 (ja) |
WO (1) | WO2006111319A2 (ja) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
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US7817250B2 (en) | 2007-07-18 | 2010-10-19 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus |
DE102008002749A1 (de) * | 2008-06-27 | 2009-12-31 | Carl Zeiss Smt Ag | Beleuchtungsoptik für die Mikrolithografie |
DE102009045135A1 (de) | 2009-09-30 | 2011-03-31 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Mikrolithographie |
DE102010001336B3 (de) | 2010-01-28 | 2011-07-28 | Carl Zeiss SMT GmbH, 73447 | Anordnung und Verfahren zur Charakterisierung der Polarisationseigenschaften eines optischen Systems |
EP2622609A1 (en) | 2010-09-27 | 2013-08-07 | Carl Zeiss SMT GmbH | Mirror, projection objective comprising such a mirror, and projection exposure apparatus for microlithography comprising such a projection objective |
DE102011078928A1 (de) | 2011-07-11 | 2013-01-17 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Projektionslithografie |
DE102012203959A1 (de) | 2012-03-14 | 2013-09-19 | Carl Zeiss Smt Gmbh | Optisches System einer mikrolithographischen Projektionsbelichtungsanlage |
WO2013013947A2 (en) | 2011-07-26 | 2013-01-31 | Carl Zeiss Smt Gmbh | Optical system of a microlithographic projection exposure apparatus, and microlithographic exposure method |
DE102011086328A1 (de) | 2011-11-15 | 2013-05-16 | Carl Zeiss Smt Gmbh | Spiegel zum Einsatz zur Führung von Beleuchtungs- und Abbildungslicht in der EUV-Projektionslithografie |
DE102012202057B4 (de) | 2012-02-10 | 2021-07-08 | Carl Zeiss Smt Gmbh | Projektionsobjektiv für EUV-Mikrolithographie, Folienelement und Verfahren zur Herstellung eines Projektionsobjektivs mit Folienelement |
DE102012203950A1 (de) * | 2012-03-14 | 2013-09-19 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für eine Projektionsbelichtungsanlage |
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DE102012223233A1 (de) | 2012-12-14 | 2014-06-18 | Carl Zeiss Smt Gmbh | Optisches System einer mikrolithographischen Projektionsbelichtungsanlage |
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DE102013205957A1 (de) | 2013-04-04 | 2014-04-30 | Carl Zeiss Smt Gmbh | Optisches System einer mikrolithographischen Projektionsbelichtungsanlage |
DE102014205579A1 (de) | 2014-03-26 | 2015-10-01 | Carl Zeiss Smt Gmbh | EUV-Lichtquelle für eine Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage |
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DE102021202847A1 (de) | 2021-03-24 | 2022-09-29 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für eine Projektionsbelichtungsanlage für die Lithografie |
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-
2006
- 2006-04-12 US US11/911,454 patent/US7982854B2/en active Active
- 2006-04-12 JP JP2008506975A patent/JP5436853B2/ja not_active Expired - Fee Related
- 2006-04-12 WO PCT/EP2006/003401 patent/WO2006111319A2/en not_active Application Discontinuation
- 2006-04-12 EP EP06753384A patent/EP1872176A2/en not_active Withdrawn
-
2011
- 2011-06-15 US US13/161,011 patent/US8854606B2/en active Active
- 2011-12-20 JP JP2011278378A patent/JP5480232B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
US20110242517A1 (en) | 2011-10-06 |
US20080192225A1 (en) | 2008-08-14 |
WO2006111319A3 (en) | 2007-05-10 |
WO2006111319A2 (en) | 2006-10-26 |
JP2012060178A (ja) | 2012-03-22 |
JP5480232B2 (ja) | 2014-04-23 |
US8854606B2 (en) | 2014-10-07 |
EP1872176A2 (en) | 2008-01-02 |
US7982854B2 (en) | 2011-07-19 |
JP2008538452A (ja) | 2008-10-23 |
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