TWI594294B - 用於具有嵌入式掃描電子顯微鏡結構重疊目標的重疊之裝置相關量測 - Google Patents
用於具有嵌入式掃描電子顯微鏡結構重疊目標的重疊之裝置相關量測 Download PDFInfo
- Publication number
- TWI594294B TWI594294B TW102132263A TW102132263A TWI594294B TW I594294 B TWI594294 B TW I594294B TW 102132263 A TW102132263 A TW 102132263A TW 102132263 A TW102132263 A TW 102132263A TW I594294 B TWI594294 B TW I594294B
- Authority
- TW
- Taiwan
- Prior art keywords
- periodic structure
- layer
- target
- periodic
- overlay
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261697503P | 2012-09-06 | 2012-09-06 | |
| US13/776,550 US9093458B2 (en) | 2012-09-06 | 2013-02-25 | Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201419377A TW201419377A (zh) | 2014-05-16 |
| TWI594294B true TWI594294B (zh) | 2017-08-01 |
Family
ID=50188111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102132263A TWI594294B (zh) | 2012-09-06 | 2013-09-06 | 用於具有嵌入式掃描電子顯微鏡結構重疊目標的重疊之裝置相關量測 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9093458B2 (OSRAM) |
| JP (1) | JP6320387B2 (OSRAM) |
| KR (1) | KR102160840B1 (OSRAM) |
| TW (1) | TWI594294B (OSRAM) |
| WO (1) | WO2014039689A1 (OSRAM) |
Families Citing this family (65)
| Publication number | Priority date | Publication date | Assignee | Title |
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| EP2865003A1 (en) * | 2012-06-26 | 2015-04-29 | Kla-Tencor Corporation | Scanning in angle-resolved reflectometry and algorithmically eliminating diffraction from optical metrology |
| US9506965B2 (en) * | 2012-11-12 | 2016-11-29 | United Microelectronics Corp. | Alternately arranged overlay marks having asymmetric spacing and measurement thereof |
| KR102312241B1 (ko) | 2012-11-21 | 2021-10-13 | 케이엘에이 코포레이션 | 프로세스 호환 세그먼팅된 타겟들 및 설계 방법들 |
| TWI625816B (zh) | 2013-04-10 | 2018-06-01 | 克萊譚克公司 | 在目標設計及生產中之直接自行組裝 |
| US9740108B2 (en) * | 2013-05-27 | 2017-08-22 | Kla-Tencor Corporation | Scatterometry overlay metrology targets and methods |
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| US9726984B2 (en) * | 2013-07-09 | 2017-08-08 | Kla-Tencor Corporation | Aperture alignment in scatterometry metrology systems |
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| JP6421237B2 (ja) | 2014-08-29 | 2018-11-07 | エーエスエムエル ネザーランズ ビー.ブイ. | メトロロジー方法、ターゲット、及び基板 |
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| US9530199B1 (en) * | 2015-07-13 | 2016-12-27 | Applied Materials Israel Ltd | Technique for measuring overlay between layers of a multilayer structure |
| US9659873B2 (en) | 2015-08-26 | 2017-05-23 | United Microelectronics Corp. | Semiconductor structure with aligning mark and method of forming the same |
| EP3171396A1 (en) * | 2015-11-18 | 2017-05-24 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Method of determining an overlay error, manufacturing method and system for manufacturing of a multilayer semiconductor device, and semiconductor device manufactured thereby |
| US9633915B1 (en) * | 2016-03-01 | 2017-04-25 | Globalfoundries Inc. | Method of using dummy patterns for overlay target design and overlay control |
| US10831111B2 (en) | 2016-03-03 | 2020-11-10 | Asml Netherlands B.V. | Metrology method and lithographic method, lithographic cell and computer program |
| US9754895B1 (en) | 2016-03-07 | 2017-09-05 | Micron Technology, Inc. | Methods of forming semiconductor devices including determining misregistration between semiconductor levels and related apparatuses |
| WO2018071063A1 (en) * | 2016-10-14 | 2018-04-19 | Kla-Tencor Corporation | Diffraction-based focus metrology |
| EP3339959A1 (en) * | 2016-12-23 | 2018-06-27 | ASML Netherlands B.V. | Method of determining a position of a feature |
| US10409171B2 (en) * | 2017-01-25 | 2019-09-10 | Kla-Tencor Corporation | Overlay control with non-zero offset prediction |
| TWI730050B (zh) * | 2017-02-15 | 2021-06-11 | 聯華電子股份有限公司 | 層疊對準標記與評估製程穩定度的方法 |
| US10732516B2 (en) * | 2017-03-01 | 2020-08-04 | Kla Tencor Corporation | Process robust overlay metrology based on optical scatterometry |
| US11073487B2 (en) * | 2017-05-11 | 2021-07-27 | Kla-Tencor Corporation | Methods and systems for characterization of an x-ray beam with high spatial resolution |
| CN107024841B (zh) * | 2017-05-16 | 2018-09-25 | 睿力集成电路有限公司 | 一种光刻光学式叠对量测图型结构 |
| US11112369B2 (en) * | 2017-06-19 | 2021-09-07 | Kla-Tencor Corporation | Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay |
| US11085754B2 (en) * | 2017-12-12 | 2021-08-10 | Kla Corporation | Enhancing metrology target information content |
| US10483214B2 (en) | 2018-01-03 | 2019-11-19 | Globalfoundries Inc. | Overlay structures |
| US10705435B2 (en) | 2018-01-12 | 2020-07-07 | Globalfoundries Inc. | Self-referencing and self-calibrating interference pattern overlay measurement |
| WO2019139685A1 (en) * | 2018-01-12 | 2019-07-18 | Kla-Tencor Corporation | Metrology targets and methods with oblique periodic structures |
| US10533848B2 (en) | 2018-03-05 | 2020-01-14 | Kla-Tencor Corporation | Metrology and control of overlay and edge placement errors |
| KR20250011250A (ko) | 2018-12-31 | 2025-01-21 | 에이에스엠엘 네델란즈 비.브이. | 스캐닝 하전 입자 현미경 교정 방법 |
| JP7317131B2 (ja) * | 2019-02-15 | 2023-07-28 | ケーエルエー コーポレイション | 結合された光および電子ビーム技術を使用する位置ずれ測定 |
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| CN110494969B (zh) | 2019-06-27 | 2020-08-25 | 长江存储科技有限责任公司 | 在形成三维存储器器件的阶梯结构中的标记图案 |
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| US11862524B2 (en) * | 2021-06-28 | 2024-01-02 | Kla Corporation | Overlay mark design for electron beam overlay |
| CN113517178B (zh) * | 2021-07-08 | 2023-06-27 | 长鑫存储技术有限公司 | 半导体结构的制备方法及半导体结构 |
| US20230017392A1 (en) * | 2021-07-15 | 2023-01-19 | Changxin Memory Technologies, Inc. | Measurement mark, measurement layout, and measurement method |
| EP4202552B1 (en) | 2021-12-24 | 2024-04-17 | Imec VZW | Method and structure for determining an overlay error |
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| US20240094639A1 (en) * | 2022-09-19 | 2024-03-21 | Kla Corporation | High-resolution evaluation of optical metrology targets for process control |
| US12092966B2 (en) | 2022-11-23 | 2024-09-17 | Kla Corporation | Device feature specific edge placement error (EPE) |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020080364A1 (en) * | 2000-12-27 | 2002-06-27 | Koninklijke Philips Electronics N.V. | Method of measuring overlay |
| US6462818B1 (en) * | 2000-06-22 | 2002-10-08 | Kla-Tencor Corporation | Overlay alignment mark design |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02112223A (ja) * | 1988-10-21 | 1990-04-24 | Olympus Optical Co Ltd | アライメントマーク |
| US5805290A (en) | 1996-05-02 | 1998-09-08 | International Business Machines Corporation | Method of optical metrology of unresolved pattern arrays |
| US6023338A (en) | 1996-07-12 | 2000-02-08 | Bareket; Noah | Overlay alignment measurement of wafers |
| US5919714A (en) | 1998-05-06 | 1999-07-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Segmented box-in-box for improving back end overlay measurement |
| US6128089A (en) | 1998-07-28 | 2000-10-03 | International Business Machines Corporation | Combined segmented and nonsegmented bar-in-bar targets |
| DE19912971C1 (de) | 1999-03-23 | 2000-09-21 | Daimler Chrysler Ag | Verfahren zur Erfassung der Lichtleistung einer Sendediode einer optischen Überwachungseinheit sowie geeignete Schaltungsanordnung |
| JP3344403B2 (ja) | 2000-03-03 | 2002-11-11 | 日本電気株式会社 | 光学収差の測定用マスク及び光学収差の測定方法 |
| US7068833B1 (en) | 2000-08-30 | 2006-06-27 | Kla-Tencor Corporation | Overlay marks, methods of overlay mark design and methods of overlay measurements |
| US6486954B1 (en) | 2000-09-01 | 2002-11-26 | Kla-Tencor Technologies Corporation | Overlay alignment measurement mark |
| US7009704B1 (en) | 2000-10-26 | 2006-03-07 | Kla-Tencor Technologies Corporation | Overlay error detection |
| US7804994B2 (en) * | 2002-02-15 | 2010-09-28 | Kla-Tencor Technologies Corporation | Overlay metrology and control method |
| US7141450B2 (en) | 2002-04-08 | 2006-11-28 | Lucent Technologies Inc. | Flip-chip alignment method |
| DE10224164B4 (de) | 2002-05-31 | 2007-05-10 | Advanced Micro Devices, Inc., Sunnyvale | Eine zweidimensionale Struktur zum Bestimmen einer Überlagerungsgenauigkeit mittels Streuungsmessung |
| JP4222927B2 (ja) * | 2002-09-20 | 2009-02-12 | エーエスエムエル ネザーランズ ビー.ブイ. | 少なくとも2波長を使用するリソグラフィ装置用アライメント・システム |
| US7440105B2 (en) * | 2002-12-05 | 2008-10-21 | Kla-Tencor Technologies Corporation | Continuously varying offset mark and methods of determining overlay |
| US7180593B2 (en) | 2003-11-05 | 2007-02-20 | Macronix International Co., Ltd. | Overlay mark for aligning different layers on a semiconductor wafer |
| US20050286052A1 (en) * | 2004-06-23 | 2005-12-29 | Kevin Huggins | Elongated features for improved alignment process integration |
| DE102005046973B4 (de) | 2005-09-30 | 2014-01-30 | Globalfoundries Inc. | Struktur und Verfahren zum gleichzeitigen Bestimmen einer Überlagerungsgenauigkeit und eines Musteranordnungsfehlers |
| WO2007040855A1 (en) * | 2005-09-30 | 2007-04-12 | Advanced Micro Devices, Inc. | Structure and method for simultaneously determining an overlay accuracy and pattern placement error |
| US7408642B1 (en) | 2006-02-17 | 2008-08-05 | Kla-Tencor Technologies Corporation | Registration target design for managing both reticle grid error and wafer overlay |
| JP2008218516A (ja) * | 2007-02-28 | 2008-09-18 | Toshiba Corp | パターン評価方法、評価マーク、それを用いた半導体装置の製造方法 |
| NL1036123A1 (nl) * | 2007-11-13 | 2009-05-14 | Asml Netherlands Bv | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method. |
| US8148682B2 (en) * | 2009-12-29 | 2012-04-03 | Hitachi, Ltd. | Method and apparatus for pattern position and overlay measurement |
| US9927718B2 (en) | 2010-08-03 | 2018-03-27 | Kla-Tencor Corporation | Multi-layer overlay metrology target and complimentary overlay metrology measurement systems |
-
2013
- 2013-02-25 US US13/776,550 patent/US9093458B2/en active Active
- 2013-09-05 JP JP2015531199A patent/JP6320387B2/ja active Active
- 2013-09-05 WO PCT/US2013/058278 patent/WO2014039689A1/en not_active Ceased
- 2013-09-05 KR KR1020157008261A patent/KR102160840B1/ko active Active
- 2013-09-06 TW TW102132263A patent/TWI594294B/zh active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6462818B1 (en) * | 2000-06-22 | 2002-10-08 | Kla-Tencor Corporation | Overlay alignment mark design |
| US20020080364A1 (en) * | 2000-12-27 | 2002-06-27 | Koninklijke Philips Electronics N.V. | Method of measuring overlay |
Also Published As
| Publication number | Publication date |
|---|---|
| US9093458B2 (en) | 2015-07-28 |
| WO2014039689A1 (en) | 2014-03-13 |
| KR20150053770A (ko) | 2015-05-18 |
| JP2015532733A (ja) | 2015-11-12 |
| KR102160840B1 (ko) | 2020-09-29 |
| TW201419377A (zh) | 2014-05-16 |
| JP6320387B2 (ja) | 2018-05-09 |
| US20140065736A1 (en) | 2014-03-06 |
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