JP6320387B2 - 埋設ｓｅｍ構造オーバーレイ標的を用いたｏｖｌのためのデバイス相関計測法（ｄｃｍ） - Google Patents
埋設ｓｅｍ構造オーバーレイ標的を用いたｏｖｌのためのデバイス相関計測法（ｄｃｍ） Download PDFInfo
- Publication number
- JP6320387B2 JP6320387B2 JP2015531199A JP2015531199A JP6320387B2 JP 6320387 B2 JP6320387 B2 JP 6320387B2 JP 2015531199 A JP2015531199 A JP 2015531199A JP 2015531199 A JP2015531199 A JP 2015531199A JP 6320387 B2 JP6320387 B2 JP 6320387B2
- Authority
- JP
- Japan
- Prior art keywords
- periodic structure
- layer
- target
- overlay
- periodic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261697503P | 2012-09-06 | 2012-09-06 | |
| US61/697,503 | 2012-09-06 | ||
| US13/776,550 US9093458B2 (en) | 2012-09-06 | 2013-02-25 | Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets |
| US13/776,550 | 2013-02-25 | ||
| PCT/US2013/058278 WO2014039689A1 (en) | 2012-09-06 | 2013-09-05 | Device correlated metrology (dcm) for ovl with embedded sem structure overlay targets |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015532733A JP2015532733A (ja) | 2015-11-12 |
| JP2015532733A5 JP2015532733A5 (OSRAM) | 2017-06-22 |
| JP6320387B2 true JP6320387B2 (ja) | 2018-05-09 |
Family
ID=50188111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015531199A Active JP6320387B2 (ja) | 2012-09-06 | 2013-09-05 | 埋設ｓｅｍ構造オーバーレイ標的を用いたｏｖｌのためのデバイス相関計測法（ｄｃｍ） |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9093458B2 (OSRAM) |
| JP (1) | JP6320387B2 (OSRAM) |
| KR (1) | KR102160840B1 (OSRAM) |
| TW (1) | TWI594294B (OSRAM) |
| WO (1) | WO2014039689A1 (OSRAM) |
Families Citing this family (65)
| Publication number | Priority date | Publication date | Assignee | Title |
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| EP2865003A1 (en) * | 2012-06-26 | 2015-04-29 | Kla-Tencor Corporation | Scanning in angle-resolved reflectometry and algorithmically eliminating diffraction from optical metrology |
| US9506965B2 (en) * | 2012-11-12 | 2016-11-29 | United Microelectronics Corp. | Alternately arranged overlay marks having asymmetric spacing and measurement thereof |
| KR102312241B1 (ko) | 2012-11-21 | 2021-10-13 | 케이엘에이 코포레이션 | 프로세스 호환 세그먼팅된 타겟들 및 설계 방법들 |
| WO2014169102A1 (en) | 2013-04-10 | 2014-10-16 | Kla-Tencor Corporation | Direct self assembly in target design and production |
| US9740108B2 (en) * | 2013-05-27 | 2017-08-22 | Kla-Tencor Corporation | Scatterometry overlay metrology targets and methods |
| WO2014194095A1 (en) | 2013-05-30 | 2014-12-04 | Kla-Tencor Corporation | Combined imaging and scatterometry metrology |
| WO2014210381A1 (en) * | 2013-06-27 | 2014-12-31 | Kla-Tencor Corporation | Polarization measurements of metrology targets and corresponding target designs |
| US9726984B2 (en) * | 2013-07-09 | 2017-08-08 | Kla-Tencor Corporation | Aperture alignment in scatterometry metrology systems |
| CN106030414B (zh) * | 2014-02-21 | 2018-10-09 | Asml荷兰有限公司 | 目标布置的优化和相关的目标 |
| US10415963B2 (en) * | 2014-04-09 | 2019-09-17 | Kla-Tencor Corporation | Estimating and eliminating inter-cell process variation inaccuracy |
| WO2015157464A1 (en) * | 2014-04-09 | 2015-10-15 | Kla-Tencor Corporation | Estimating and eliminating inter-cell process variation inaccuracy |
| KR20160007192A (ko) | 2014-07-11 | 2016-01-20 | 삼성전자주식회사 | 오버레이 측정 방법, 오버레이 측정 시스템 및 이를 이용한 반도체 장치의 제조 방법 |
| US10228320B1 (en) | 2014-08-08 | 2019-03-12 | KLA—Tencor Corporation | Achieving a small pattern placement error in metrology targets |
| WO2016030255A2 (en) | 2014-08-29 | 2016-03-03 | Asml Netherlands B.V. | Metrology method, target and substrate |
| KR102294349B1 (ko) | 2014-11-26 | 2021-08-26 | 에이에스엠엘 네델란즈 비.브이. | 계측 방법, 컴퓨터 제품 및 시스템 |
| WO2016123552A1 (en) | 2015-01-30 | 2016-08-04 | Kla-Tencor Corporation | Device metrology targets and methods |
| WO2016206965A1 (en) * | 2015-06-23 | 2016-12-29 | Asml Netherlands B.V. | Lithographic apparatus and method |
| US9530199B1 (en) * | 2015-07-13 | 2016-12-27 | Applied Materials Israel Ltd | Technique for measuring overlay between layers of a multilayer structure |
| US9659873B2 (en) | 2015-08-26 | 2017-05-23 | United Microelectronics Corp. | Semiconductor structure with aligning mark and method of forming the same |
| EP3171396A1 (en) * | 2015-11-18 | 2017-05-24 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Method of determining an overlay error, manufacturing method and system for manufacturing of a multilayer semiconductor device, and semiconductor device manufactured thereby |
| US9633915B1 (en) * | 2016-03-01 | 2017-04-25 | Globalfoundries Inc. | Method of using dummy patterns for overlay target design and overlay control |
| US10831111B2 (en) | 2016-03-03 | 2020-11-10 | Asml Netherlands B.V. | Metrology method and lithographic method, lithographic cell and computer program |
| US9754895B1 (en) | 2016-03-07 | 2017-09-05 | Micron Technology, Inc. | Methods of forming semiconductor devices including determining misregistration between semiconductor levels and related apparatuses |
| US10761023B2 (en) * | 2016-10-14 | 2020-09-01 | Kla-Tencor Corporation | Diffraction-based focus metrology |
| EP3339959A1 (en) * | 2016-12-23 | 2018-06-27 | ASML Netherlands B.V. | Method of determining a position of a feature |
| US10409171B2 (en) * | 2017-01-25 | 2019-09-10 | Kla-Tencor Corporation | Overlay control with non-zero offset prediction |
| TWI730050B (zh) * | 2017-02-15 | 2021-06-11 | 聯華電子股份有限公司 | 層疊對準標記與評估製程穩定度的方法 |
| US10732516B2 (en) * | 2017-03-01 | 2020-08-04 | Kla Tencor Corporation | Process robust overlay metrology based on optical scatterometry |
| US11073487B2 (en) * | 2017-05-11 | 2021-07-27 | Kla-Tencor Corporation | Methods and systems for characterization of an x-ray beam with high spatial resolution |
| CN107024841B (zh) * | 2017-05-16 | 2018-09-25 | 睿力集成电路有限公司 | 一种光刻光学式叠对量测图型结构 |
| US11112369B2 (en) * | 2017-06-19 | 2021-09-07 | Kla-Tencor Corporation | Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay |
| US11085754B2 (en) * | 2017-12-12 | 2021-08-10 | Kla Corporation | Enhancing metrology target information content |
| US10483214B2 (en) | 2018-01-03 | 2019-11-19 | Globalfoundries Inc. | Overlay structures |
| US10705435B2 (en) | 2018-01-12 | 2020-07-07 | Globalfoundries Inc. | Self-referencing and self-calibrating interference pattern overlay measurement |
| WO2019139685A1 (en) * | 2018-01-12 | 2019-07-18 | Kla-Tencor Corporation | Metrology targets and methods with oblique periodic structures |
| US10533848B2 (en) | 2018-03-05 | 2020-01-14 | Kla-Tencor Corporation | Metrology and control of overlay and edge placement errors |
| CN113228222B (zh) * | 2018-12-31 | 2024-12-31 | Asml荷兰有限公司 | 用于校准扫描带电粒子显微镜的方法 |
| US11075126B2 (en) | 2019-02-15 | 2021-07-27 | Kla-Tencor Corporation | Misregistration measurements using combined optical and electron beam technology |
| CN113366619B (zh) * | 2019-02-15 | 2025-08-22 | 科磊股份有限公司 | 使用组合光学与电子束技术的偏移测量 |
| US10804170B2 (en) | 2019-03-11 | 2020-10-13 | Globalfoundries Inc. | Device/health of line (HOL) aware eBeam based overlay (EBO OVL) structure |
| WO2020258116A1 (en) * | 2019-06-27 | 2020-12-30 | Yangtze Memory Technologies Co., Ltd. | Marking pattern in forming staircase structure of three-dimensional memory device |
| US11914290B2 (en) * | 2019-07-24 | 2024-02-27 | Kla Corporation | Overlay measurement targets design |
| US11256177B2 (en) | 2019-09-11 | 2022-02-22 | Kla Corporation | Imaging overlay targets using Moiré elements and rotational symmetry arrangements |
| KR102494237B1 (ko) | 2019-09-16 | 2023-01-31 | 케이엘에이 코포레이션 | 주기적 반도체 디바이스 오정합 계측 시스템 및 방법 |
| US11809090B2 (en) * | 2020-01-30 | 2023-11-07 | Kla Corporation | Composite overlay metrology target |
| KR102630496B1 (ko) | 2020-04-15 | 2024-01-29 | 케이엘에이 코포레이션 | 반도체 디바이스의 오정합을 측정하는 데 유용한 디바이스 스케일 피쳐를 갖는 오정합 타겟 |
| US11487929B2 (en) | 2020-04-28 | 2022-11-01 | Kla Corporation | Target design process for overlay targets intended for multi-signal measurements |
| WO2021225587A1 (en) * | 2020-05-06 | 2021-11-11 | Kla Corporation | Inter-step feedforward process control in the manufacture of semiconductor devices |
| US11686576B2 (en) | 2020-06-04 | 2023-06-27 | Kla Corporation | Metrology target for one-dimensional measurement of periodic misregistration |
| US12100574B2 (en) * | 2020-07-01 | 2024-09-24 | Kla Corporation | Target and algorithm to measure overlay by modeling back scattering electrons on overlapping structures |
| CN112015061A (zh) * | 2020-08-27 | 2020-12-01 | 上海华力集成电路制造有限公司 | 一种套刻精度量测标记及其使用方法 |
| WO2022064033A1 (en) * | 2020-09-28 | 2022-03-31 | Asml Netherlands B.V. | Target structure and associated methods and apparatus |
| EP4020084A1 (en) * | 2020-12-22 | 2022-06-29 | ASML Netherlands B.V. | Metrology method |
| EP4053636A1 (en) * | 2021-03-02 | 2022-09-07 | ASML Netherlands B.V. | Alignment method |
| US11862524B2 (en) | 2021-06-28 | 2024-01-02 | Kla Corporation | Overlay mark design for electron beam overlay |
| CN113517178B (zh) * | 2021-07-08 | 2023-06-27 | 长鑫存储技术有限公司 | 半导体结构的制备方法及半导体结构 |
| US20230017392A1 (en) * | 2021-07-15 | 2023-01-19 | Changxin Memory Technologies, Inc. | Measurement mark, measurement layout, and measurement method |
| EP4202552B1 (en) | 2021-12-24 | 2024-04-17 | Imec VZW | Method and structure for determining an overlay error |
| US11796925B2 (en) | 2022-01-03 | 2023-10-24 | Kla Corporation | Scanning overlay metrology using overlay targets having multiple spatial frequencies |
| US12032300B2 (en) | 2022-02-14 | 2024-07-09 | Kla Corporation | Imaging overlay with mutually coherent oblique illumination |
| US12487190B2 (en) | 2022-03-30 | 2025-12-02 | Kla Corporation | System and method for isolation of specific fourier pupil frequency in overlay metrology |
| US12422363B2 (en) | 2022-03-30 | 2025-09-23 | Kla Corporation | Scanning scatterometry overlay metrology |
| US20240094639A1 (en) * | 2022-09-19 | 2024-03-21 | Kla Corporation | High-resolution evaluation of optical metrology targets for process control |
| US12092966B2 (en) | 2022-11-23 | 2024-09-17 | Kla Corporation | Device feature specific edge placement error (EPE) |
| US12235588B2 (en) | 2023-02-16 | 2025-02-25 | Kla Corporation | Scanning overlay metrology with high signal to noise ratio |
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| JPH02112223A (ja) * | 1988-10-21 | 1990-04-24 | Olympus Optical Co Ltd | アライメントマーク |
| US5805290A (en) | 1996-05-02 | 1998-09-08 | International Business Machines Corporation | Method of optical metrology of unresolved pattern arrays |
| US6023338A (en) | 1996-07-12 | 2000-02-08 | Bareket; Noah | Overlay alignment measurement of wafers |
| US5919714A (en) | 1998-05-06 | 1999-07-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Segmented box-in-box for improving back end overlay measurement |
| US6128089A (en) | 1998-07-28 | 2000-10-03 | International Business Machines Corporation | Combined segmented and nonsegmented bar-in-bar targets |
| DE19912971C1 (de) | 1999-03-23 | 2000-09-21 | Daimler Chrysler Ag | Verfahren zur Erfassung der Lichtleistung einer Sendediode einer optischen Überwachungseinheit sowie geeignete Schaltungsanordnung |
| JP3344403B2 (ja) | 2000-03-03 | 2002-11-11 | 日本電気株式会社 | 光学収差の測定用マスク及び光学収差の測定方法 |
| US6462818B1 (en) * | 2000-06-22 | 2002-10-08 | Kla-Tencor Corporation | Overlay alignment mark design |
| US7068833B1 (en) | 2000-08-30 | 2006-06-27 | Kla-Tencor Corporation | Overlay marks, methods of overlay mark design and methods of overlay measurements |
| US6486954B1 (en) | 2000-09-01 | 2002-11-26 | Kla-Tencor Technologies Corporation | Overlay alignment measurement mark |
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| TW526573B (en) * | 2000-12-27 | 2003-04-01 | Koninkl Philips Electronics Nv | Method of measuring overlay |
| US7804994B2 (en) * | 2002-02-15 | 2010-09-28 | Kla-Tencor Technologies Corporation | Overlay metrology and control method |
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| DE10224164B4 (de) | 2002-05-31 | 2007-05-10 | Advanced Micro Devices, Inc., Sunnyvale | Eine zweidimensionale Struktur zum Bestimmen einer Überlagerungsgenauigkeit mittels Streuungsmessung |
| SG125923A1 (en) * | 2002-09-20 | 2006-10-30 | Asml Netherlands Bv | Lithographic marker structure, lithographic projection apparatus comprising such a lithographic marker structure and method for substrate alignment using such a lithographic marker structure |
| US7440105B2 (en) * | 2002-12-05 | 2008-10-21 | Kla-Tencor Technologies Corporation | Continuously varying offset mark and methods of determining overlay |
| US7180593B2 (en) | 2003-11-05 | 2007-02-20 | Macronix International Co., Ltd. | Overlay mark for aligning different layers on a semiconductor wafer |
| US20050286052A1 (en) * | 2004-06-23 | 2005-12-29 | Kevin Huggins | Elongated features for improved alignment process integration |
| DE102005046973B4 (de) | 2005-09-30 | 2014-01-30 | Globalfoundries Inc. | Struktur und Verfahren zum gleichzeitigen Bestimmen einer Überlagerungsgenauigkeit und eines Musteranordnungsfehlers |
| WO2007040855A1 (en) * | 2005-09-30 | 2007-04-12 | Advanced Micro Devices, Inc. | Structure and method for simultaneously determining an overlay accuracy and pattern placement error |
| US7408642B1 (en) | 2006-02-17 | 2008-08-05 | Kla-Tencor Technologies Corporation | Registration target design for managing both reticle grid error and wafer overlay |
| JP2008218516A (ja) * | 2007-02-28 | 2008-09-18 | Toshiba Corp | パターン評価方法、評価マーク、それを用いた半導体装置の製造方法 |
| NL1036123A1 (nl) * | 2007-11-13 | 2009-05-14 | Asml Netherlands Bv | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method. |
| US8148682B2 (en) * | 2009-12-29 | 2012-04-03 | Hitachi, Ltd. | Method and apparatus for pattern position and overlay measurement |
| US9927718B2 (en) | 2010-08-03 | 2018-03-27 | Kla-Tencor Corporation | Multi-layer overlay metrology target and complimentary overlay metrology measurement systems |
-
2013
- 2013-02-25 US US13/776,550 patent/US9093458B2/en active Active
- 2013-09-05 KR KR1020157008261A patent/KR102160840B1/ko active Active
- 2013-09-05 WO PCT/US2013/058278 patent/WO2014039689A1/en not_active Ceased
- 2013-09-05 JP JP2015531199A patent/JP6320387B2/ja active Active
- 2013-09-06 TW TW102132263A patent/TWI594294B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI594294B (zh) | 2017-08-01 |
| TW201419377A (zh) | 2014-05-16 |
| JP2015532733A (ja) | 2015-11-12 |
| US9093458B2 (en) | 2015-07-28 |
| US20140065736A1 (en) | 2014-03-06 |
| WO2014039689A1 (en) | 2014-03-13 |
| KR102160840B1 (ko) | 2020-09-29 |
| KR20150053770A (ko) | 2015-05-18 |
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