TWI592981B - 電漿處理裝置及電漿處理方法 - Google Patents

電漿處理裝置及電漿處理方法 Download PDF

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Publication number
TWI592981B
TWI592981B TW105104757A TW105104757A TWI592981B TW I592981 B TWI592981 B TW I592981B TW 105104757 A TW105104757 A TW 105104757A TW 105104757 A TW105104757 A TW 105104757A TW I592981 B TWI592981 B TW I592981B
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TW
Taiwan
Prior art keywords
plasma
voltage
electrode
wafer
potential
Prior art date
Application number
TW105104757A
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English (en)
Chinese (zh)
Other versions
TW201640558A (zh
Inventor
石黒正貴
角屋誠浩
白米茂
池永和幸
田村智行
Original Assignee
日立全球先端科技股份有限公司
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Application filed by 日立全球先端科技股份有限公司 filed Critical 日立全球先端科技股份有限公司
Publication of TW201640558A publication Critical patent/TW201640558A/zh
Application granted granted Critical
Publication of TWI592981B publication Critical patent/TWI592981B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H10P50/242—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32027—DC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H10P14/6514—
    • H10P14/6532—
    • H10P50/267—
    • H10P72/72—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
TW105104757A 2015-05-12 2016-02-18 電漿處理裝置及電漿處理方法 TWI592981B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015096998A JP6518505B2 (ja) 2015-05-12 2015-05-12 プラズマ処理装置およびプラズマ処理方法

Publications (2)

Publication Number Publication Date
TW201640558A TW201640558A (zh) 2016-11-16
TWI592981B true TWI592981B (zh) 2017-07-21

Family

ID=57276154

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105104757A TWI592981B (zh) 2015-05-12 2016-02-18 電漿處理裝置及電漿處理方法

Country Status (4)

Country Link
US (3) US9941133B2 (enExample)
JP (1) JP6518505B2 (enExample)
KR (2) KR102066546B1 (enExample)
TW (1) TWI592981B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180041343A (ko) 2016-10-14 2018-04-24 주식회사 엘지화학 금속합금폼의 제조 방법
JP7045152B2 (ja) * 2017-08-18 2022-03-31 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR102330944B1 (ko) * 2018-01-29 2021-12-01 가부시키가이샤 알박 반응성 이온 에칭 장치
JP7061922B2 (ja) * 2018-04-27 2022-05-02 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN111446144B (zh) * 2019-01-17 2024-04-19 东京毅力科创株式会社 静电吸附部的控制方法和等离子体处理装置
JP7346269B2 (ja) * 2019-01-17 2023-09-19 東京エレクトロン株式会社 静電吸着部の制御方法、及びプラズマ処理装置
JP2020177785A (ja) * 2019-04-17 2020-10-29 日本電産株式会社 プラズマ処理装置
KR102490292B1 (ko) * 2019-08-05 2023-01-20 주식회사 히타치하이테크 플라스마 처리 장치
TWI796593B (zh) * 2019-09-06 2023-03-21 美商應用材料股份有限公司 用於不同基板的共同靜電吸盤
KR102724709B1 (ko) * 2020-03-31 2024-10-30 아토나프 가부시키가이샤 플라즈마 생성 장치
CN119895545A (zh) 2023-08-23 2025-04-25 株式会社日立高新技术 等离子处理装置以及等离子处理方法

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JPH06204177A (ja) * 1992-12-28 1994-07-22 Fujitsu Ltd プラズマ処理方法
JPH06349594A (ja) * 1993-06-07 1994-12-22 Mitsubishi Electric Corp プラズマ発生装置
JPH0722499A (ja) * 1993-06-18 1995-01-24 Kokusai Electric Co Ltd 半導体製造装置及び方法
US5894400A (en) * 1997-05-29 1999-04-13 Wj Semiconductor Equipment Group, Inc. Method and apparatus for clamping a substrate
JP3751012B2 (ja) * 1997-08-12 2006-03-01 東京エレクトロン株式会社 半導体プラズマ装置における圧力系の制御方法及びその装置
US6346428B1 (en) * 1998-08-17 2002-02-12 Tegal Corporation Method and apparatus for minimizing semiconductor wafer arcing during semiconductor wafer processing
JP2002100573A (ja) * 2000-09-25 2002-04-05 Nec Corp 半導体製造装置および半導体製造方法
JP2004047511A (ja) 2002-07-08 2004-02-12 Tokyo Electron Ltd 離脱方法、処理方法、静電吸着装置および処理装置
JP2007115765A (ja) * 2005-10-18 2007-05-10 Hitachi High-Technologies Corp プラズマ処理装置
US20070211402A1 (en) 2006-03-08 2007-09-13 Tokyo Electron Limited Substrate processing apparatus, substrate attracting method, and storage medium
JP4847909B2 (ja) * 2007-03-29 2011-12-28 東京エレクトロン株式会社 プラズマ処理方法及び装置
US9123509B2 (en) * 2007-06-29 2015-09-01 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
JP4126084B1 (ja) 2007-07-23 2008-07-30 信越エンジニアリング株式会社 静電チャックの表面電位制御方法
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US20090109595A1 (en) * 2007-10-31 2009-04-30 Sokudo Co., Ltd. Method and system for performing electrostatic chuck clamping in track lithography tools
JP2010040822A (ja) 2008-08-06 2010-02-18 Tokyo Electron Ltd 静電吸着装置の除電処理方法、基板処理装置、及び記憶媒体
JP2011060984A (ja) * 2009-09-10 2011-03-24 Renesas Electronics Corp プラズマ処理装置及びプラズマ処理方法
JP5596082B2 (ja) * 2012-06-18 2014-09-24 東京エレクトロン株式会社 基板吸着離脱方法及び基板処理方法
JP6088780B2 (ja) * 2012-10-02 2017-03-01 株式会社アルバック プラズマ処理方法及びプラズマ処理装置
JP2014075398A (ja) * 2012-10-03 2014-04-24 Tokyo Electron Ltd プラズマ処理方法及びプラズマ処理装置
JP2015072825A (ja) * 2013-10-03 2015-04-16 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法

Also Published As

Publication number Publication date
US9941133B2 (en) 2018-04-10
US11315792B2 (en) 2022-04-26
KR20180001536A (ko) 2018-01-04
TW201640558A (zh) 2016-11-16
KR102066546B1 (ko) 2020-01-15
US20190333772A1 (en) 2019-10-31
KR102266687B1 (ko) 2021-06-17
US20180190502A1 (en) 2018-07-05
JP2016213358A (ja) 2016-12-15
JP6518505B2 (ja) 2019-05-22
US10395935B2 (en) 2019-08-27
US20160336185A1 (en) 2016-11-17
KR20160133353A (ko) 2016-11-22

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