TWI590318B - 基板處理裝置及基板處理方法 - Google Patents
基板處理裝置及基板處理方法 Download PDFInfo
- Publication number
- TWI590318B TWI590318B TW103107697A TW103107697A TWI590318B TW I590318 B TWI590318 B TW I590318B TW 103107697 A TW103107697 A TW 103107697A TW 103107697 A TW103107697 A TW 103107697A TW I590318 B TWI590318 B TW I590318B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- volatile solvent
- unit
- supply
- liquid
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 281
- 238000003672 processing method Methods 0.000 title claims description 10
- 239000007788 liquid Substances 0.000 claims description 121
- 239000002904 solvent Substances 0.000 claims description 83
- 239000007789 gas Substances 0.000 claims description 76
- 238000010438 heat treatment Methods 0.000 claims description 45
- 230000007246 mechanism Effects 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000001035 drying Methods 0.000 description 32
- 230000032258 transport Effects 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 229910021642 ultra pure water Inorganic materials 0.000 description 10
- 239000012498 ultrapure water Substances 0.000 description 10
- 238000007664 blowing Methods 0.000 description 8
- 238000009835 boiling Methods 0.000 description 8
- 229910001873 dinitrogen Inorganic materials 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 239000011324 bead Substances 0.000 description 3
- 230000006837 decompression Effects 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- XOBKSJJDNFUZPF-UHFFFAOYSA-N Methoxyethane Chemical compound CCOC XOBKSJJDNFUZPF-UHFFFAOYSA-N 0.000 description 1
- -1 That is Substances 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- SYJRVVFAAIUVDH-UHFFFAOYSA-N ipa isopropanol Chemical compound CC(C)O.CC(C)O SYJRVVFAAIUVDH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B3/00—Drying solid materials or objects by processes involving the application of heat
- F26B3/28—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun
- F26B3/30—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun from infrared-emitting elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B3/00—Drying solid materials or objects by processes involving the application of heat
- F26B3/28—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B11/00—Machines or apparatus for drying solid materials or objects with movement which is non-progressive
- F26B11/18—Machines or apparatus for drying solid materials or objects with movement which is non-progressive on or in moving dishes, trays, pans, or other mainly-open receptacles
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B5/00—Drying solid materials or objects by processes not involving the application of heat
- F26B5/005—Drying solid materials or objects by processes not involving the application of heat by dipping them into or mixing them with a chemical liquid, e.g. organic; chemical, e.g. organic, dewatering aids
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B7/00—Drying solid materials or objects by processes using a combination of processes not covered by a single one of groups F26B3/00 and F26B5/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Microbiology (AREA)
- Chemical & Material Sciences (AREA)
- Toxicology (AREA)
- Combustion & Propulsion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Molecular Biology (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Solid Materials (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013045532 | 2013-03-07 | ||
| JP2013140416 | 2013-07-04 | ||
| JP2014028314A JP6400919B2 (ja) | 2013-03-07 | 2014-02-18 | 基板処理装置及び基板処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201508830A TW201508830A (zh) | 2015-03-01 |
| TWI590318B true TWI590318B (zh) | 2017-07-01 |
Family
ID=51491189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103107697A TWI590318B (zh) | 2013-03-07 | 2014-03-06 | 基板處理裝置及基板處理方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10281210B2 (enExample) |
| EP (1) | EP2966673B1 (enExample) |
| JP (1) | JP6400919B2 (enExample) |
| KR (1) | KR101759414B1 (enExample) |
| CN (1) | CN105027268B (enExample) |
| TW (1) | TWI590318B (enExample) |
| WO (1) | WO2014136670A1 (enExample) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6317837B2 (ja) * | 2012-11-08 | 2018-04-25 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
| JP6131162B2 (ja) | 2012-11-08 | 2017-05-17 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
| WO2015133391A1 (ja) * | 2014-03-07 | 2015-09-11 | 富士フイルム株式会社 | トランジスタの製造方法 |
| JP6304592B2 (ja) * | 2014-03-25 | 2018-04-04 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
| TWI667686B (zh) * | 2015-01-23 | 2019-08-01 | 日本思可林集團股份有限公司 | 基板處理方法及基板處理裝置暨流體噴嘴 |
| KR101860631B1 (ko) | 2015-04-30 | 2018-05-23 | 시바우라 메카트로닉스 가부시끼가이샤 | 기판 처리 장치 및 기판 처리 방법 |
| JP6687436B2 (ja) * | 2015-04-30 | 2020-04-22 | 芝浦メカトロニクス株式会社 | 基板処理装置及び基板処理方法 |
| JP6418554B2 (ja) * | 2015-06-10 | 2018-11-07 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
| JP6742708B2 (ja) * | 2015-09-29 | 2020-08-19 | 芝浦メカトロニクス株式会社 | 基板処理方法 |
| US10804121B2 (en) * | 2016-02-25 | 2020-10-13 | Shibaura Mechatronics Corporation | Substrate treatment apparatus, substrate treatment method, and method for manufacturing substrate |
| JP6742124B2 (ja) | 2016-03-30 | 2020-08-19 | 株式会社Screenホールディングス | 基板処理装置 |
| JP6722551B2 (ja) | 2016-08-31 | 2020-07-15 | 株式会社Screenホールディングス | 基板処理方法 |
| JP6728009B2 (ja) * | 2016-09-26 | 2020-07-22 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
| KR102030068B1 (ko) * | 2017-10-12 | 2019-10-08 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| KR102249802B1 (ko) * | 2018-07-13 | 2021-05-10 | 세메스 주식회사 | 기판 처리 장치 |
| JP7175119B2 (ja) * | 2018-07-25 | 2022-11-18 | 東京エレクトロン株式会社 | 基板処理装置、および基板処理方法 |
| JP7077184B2 (ja) * | 2018-08-30 | 2022-05-30 | キオクシア株式会社 | 基板処理方法及び半導体装置の製造方法 |
| JP7336306B2 (ja) * | 2018-10-23 | 2023-08-31 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法および記憶媒体 |
| CN109489363A (zh) * | 2018-12-24 | 2019-03-19 | 国兴(东莞)新能源科技有限公司 | 一种软包电池除水装置 |
| CN111380331A (zh) * | 2018-12-29 | 2020-07-07 | 中国科学院微电子研究所 | 一种微波干燥装置 |
| JP7194645B2 (ja) * | 2019-05-31 | 2022-12-22 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
| CN110631342A (zh) * | 2019-10-15 | 2019-12-31 | 东海县牡丹手套有限公司 | 一种手套加工用手套存放设备 |
| KR102391973B1 (ko) * | 2019-10-21 | 2022-04-27 | 세메스 주식회사 | 기판 처리 장치 |
| CN113053728B (zh) | 2019-12-27 | 2024-08-27 | 株式会社斯库林集团 | 基板处理方法以及基板处理装置 |
| JP7406404B2 (ja) * | 2020-02-28 | 2023-12-27 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
| JP6886546B2 (ja) * | 2020-05-12 | 2021-06-16 | 芝浦メカトロニクス株式会社 | 基板処理装置 |
| TWI793744B (zh) * | 2020-09-09 | 2023-02-21 | 日商國際電氣股份有限公司 | 基板處理裝置、半導體裝置之製造方法及程式 |
| GB202015527D0 (en) * | 2020-09-30 | 2020-11-11 | Lam Res Ag | Apparatus for processing wafer-shaped articles |
| CN112503894A (zh) * | 2020-12-07 | 2021-03-16 | 安徽海洋药业有限公司 | 一种药瓶干燥机 |
| CN114674120A (zh) * | 2020-12-24 | 2022-06-28 | 中国科学院微电子研究所 | 半导体干燥装置及方法 |
| CN112856981A (zh) * | 2021-01-13 | 2021-05-28 | 东莞理工学院 | 一种用于mems器件圆片的自动干燥设备 |
| CN112902616A (zh) * | 2021-01-22 | 2021-06-04 | 徐州中辉光伏科技有限公司 | 一种高效率的太阳能光伏板组件加工用烘干装置 |
| KR102596286B1 (ko) * | 2021-03-15 | 2023-11-01 | 세메스 주식회사 | 기판 처리 방법 및 기판 처리 장치 |
| JP7726653B2 (ja) * | 2021-03-31 | 2025-08-20 | 芝浦メカトロニクス株式会社 | 基板乾燥装置及び基板処理装置 |
| CN112944856B (zh) * | 2021-04-18 | 2022-08-16 | 黄韶平 | 试剂盒烘干装置 |
| CN112944831A (zh) * | 2021-04-23 | 2021-06-11 | 江西省优斯特能源有限公司 | 一种具有转动结构的电池加工用烘干设备 |
| JP2024033671A (ja) * | 2022-08-31 | 2024-03-13 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
| CN116147309B (zh) * | 2023-02-21 | 2023-09-22 | 闽海家居(江苏)有限公司 | 一种木地板生产原木干燥装置及其干燥方法 |
| CN119381291B (zh) * | 2024-09-04 | 2025-11-25 | 深圳市昇维旭技术有限公司 | 基板处理装置及基板处理方法 |
| CN120149212B (zh) * | 2025-05-14 | 2025-08-15 | 苏州智程半导体科技股份有限公司 | 一种晶圆刻蚀用加热装置 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TW386235B (en) | 1995-05-23 | 2000-04-01 | Tokyo Electron Ltd | Method for spin rinsing |
| JP3402932B2 (ja) * | 1995-05-23 | 2003-05-06 | 東京エレクトロン株式会社 | 洗浄方法及びその装置 |
| AT408287B (de) * | 1996-10-01 | 2001-10-25 | Sez Semiconduct Equip Zubehoer | Verfahren und vorrichtung zum trocknen von scheibenförmigen substraten der halbleitertechnik |
| US6248168B1 (en) * | 1997-12-15 | 2001-06-19 | Tokyo Electron Limited | Spin coating apparatus including aging unit and solvent replacement unit |
| JP3558127B2 (ja) * | 2001-04-09 | 2004-08-25 | エコー技研株式会社 | ウエハの乾燥装置および乾燥方法 |
| JP4333866B2 (ja) * | 2002-09-26 | 2009-09-16 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
| US7708751B2 (en) * | 2004-05-21 | 2010-05-04 | Ethicon Endo-Surgery, Inc. | MRI biopsy device |
| US20070029536A1 (en) * | 2005-08-04 | 2007-02-08 | Garvin Goode | Picket assembly |
| JP2008034779A (ja) | 2006-06-27 | 2008-02-14 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
| JP2008034428A (ja) * | 2006-07-26 | 2008-02-14 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
| US7838425B2 (en) * | 2008-06-16 | 2010-11-23 | Kabushiki Kaisha Toshiba | Method of treating surface of semiconductor substrate |
| JP5413016B2 (ja) | 2008-07-31 | 2014-02-12 | 東京エレクトロン株式会社 | 基板の洗浄方法、基板の洗浄装置及び記憶媒体 |
| US8153533B2 (en) * | 2008-09-24 | 2012-04-10 | Lam Research | Methods and systems for preventing feature collapse during microelectronic topography fabrication |
| JP5359286B2 (ja) * | 2009-01-07 | 2013-12-04 | 東京エレクトロン株式会社 | 超臨界処理装置、基板処理システム及び超臨界処理方法 |
| JP5234985B2 (ja) * | 2009-03-31 | 2013-07-10 | 大日本スクリーン製造株式会社 | 基板処理装置及び基板処理方法 |
| US20120016027A1 (en) * | 2010-07-15 | 2012-01-19 | Brien Holden Vision Institute | Composition and Method for Improved Lens Comfort |
| US20120103371A1 (en) | 2010-10-28 | 2012-05-03 | Lam Research Ag | Method and apparatus for drying a semiconductor wafer |
| JP5254308B2 (ja) | 2010-12-27 | 2013-08-07 | 東京エレクトロン株式会社 | 液処理装置、液処理方法及びその液処理方法を実行させるためのプログラムを記録した記録媒体 |
| JP5611884B2 (ja) * | 2011-04-14 | 2014-10-22 | 東京エレクトロン株式会社 | エッチング方法、エッチング装置および記憶媒体 |
-
2014
- 2014-02-18 JP JP2014028314A patent/JP6400919B2/ja active Active
- 2014-02-28 KR KR1020157025984A patent/KR101759414B1/ko active Active
- 2014-02-28 US US14/773,055 patent/US10281210B2/en active Active
- 2014-02-28 EP EP14760514.1A patent/EP2966673B1/en not_active Not-in-force
- 2014-02-28 WO PCT/JP2014/055054 patent/WO2014136670A1/ja not_active Ceased
- 2014-02-28 CN CN201480010842.3A patent/CN105027268B/zh active Active
- 2014-03-06 TW TW103107697A patent/TWI590318B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20150120506A (ko) | 2015-10-27 |
| TW201508830A (zh) | 2015-03-01 |
| EP2966673A4 (en) | 2016-11-09 |
| WO2014136670A1 (ja) | 2014-09-12 |
| CN105027268A (zh) | 2015-11-04 |
| US10281210B2 (en) | 2019-05-07 |
| JP6400919B2 (ja) | 2018-10-03 |
| EP2966673B1 (en) | 2020-10-14 |
| CN105027268B (zh) | 2017-07-11 |
| EP2966673A1 (en) | 2016-01-13 |
| KR101759414B1 (ko) | 2017-07-18 |
| US20160025409A1 (en) | 2016-01-28 |
| JP2015029041A (ja) | 2015-02-12 |
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