TWI588609B - 負型光阻組成物及圖案形成方法 - Google Patents

負型光阻組成物及圖案形成方法 Download PDF

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Publication number
TWI588609B
TWI588609B TW105110679A TW105110679A TWI588609B TW I588609 B TWI588609 B TW I588609B TW 105110679 A TW105110679 A TW 105110679A TW 105110679 A TW105110679 A TW 105110679A TW I588609 B TWI588609 B TW I588609B
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Taiwan
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group
atom
branched
linear
substituted
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TW105110679A
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English (en)
Chinese (zh)
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TW201642042A (zh
Inventor
土門大將
增永惠一
渡邊聰
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信越化學工業股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
TW105110679A 2015-04-07 2016-04-06 負型光阻組成物及圖案形成方法 TWI588609B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015078433 2015-04-07
JP2015078904A JP6274144B2 (ja) 2015-04-07 2015-04-08 ネガ型レジスト組成物及びパターン形成方法

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TW201642042A TW201642042A (zh) 2016-12-01
TWI588609B true TWI588609B (zh) 2017-06-21

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CN (1) CN106054521B (ja)
TW (1) TWI588609B (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6609193B2 (ja) * 2016-01-25 2019-11-20 信越化学工業株式会社 高分子化合物、ネガ型レジスト組成物、積層体、パターン形成方法、及び化合物
CN108073035A (zh) * 2016-11-08 2018-05-25 中芯国际集成电路制造(上海)有限公司 一种光刻掩膜版和光刻掩膜版缺陷的修复方法
JP7009980B2 (ja) * 2016-12-28 2022-01-26 信越化学工業株式会社 化学増幅ネガ型レジスト組成物及びレジストパターン形成方法
JP6922849B2 (ja) 2018-05-25 2021-08-18 信越化学工業株式会社 単量体、ポリマー、ネガ型レジスト組成物、フォトマスクブランク、及びレジストパターン形成方法
JP7365110B2 (ja) * 2018-09-11 2023-10-19 信越化学工業株式会社 ヨードニウム塩、レジスト組成物、及びパターン形成方法
JP7099250B2 (ja) 2018-10-25 2022-07-12 信越化学工業株式会社 オニウム塩、ネガ型レジスト組成物及びレジストパターン形成方法
JP7099256B2 (ja) * 2018-11-02 2022-07-12 信越化学工業株式会社 重合体の製造方法、及び重合体

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201439679A (zh) * 2013-01-29 2014-10-16 Shinetsu Chemical Co 負型光阻材料及利用此之圖案形成方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004086203A (ja) * 2002-08-07 2004-03-18 Renesas Technology Corp 微細パターン形成材料および電子デバイスの製造方法
JP4386200B2 (ja) * 2007-03-30 2009-12-16 信越化学工業株式会社 ネガ型レジスト材料及びパターン形成方法
JP5445430B2 (ja) * 2010-11-15 2014-03-19 信越化学工業株式会社 パターン形成方法
JP5365651B2 (ja) * 2011-02-28 2013-12-11 信越化学工業株式会社 化学増幅ネガ型レジスト組成物及びパターン形成方法
US9244348B2 (en) * 2012-02-13 2016-01-26 Shin-Etsu Chemical Co., Ltd. Chemically amplified negative resist composition and pattern forming process
WO2015125495A1 (en) * 2014-02-24 2015-08-27 Toyo Gosei Co., Ltd. Reagent for Enhancing Generation of Chemical Species
WO2015129275A1 (en) * 2014-02-26 2015-09-03 Toyo Gosei Co., Ltd. Reagent for Enhancing Generation of Chemical Species
KR101847429B1 (ko) * 2014-06-19 2018-04-10 후지필름 가부시키가이샤 감방사선성 또는 감활성광선성 수지 조성물과 그것을 이용한 레지스트막, 마스크 블랭크, 레지스트 패턴 형성 방법, 전자 디바이스의 제조 방법, 및 전자 디바이스
US10345700B2 (en) * 2014-09-08 2019-07-09 International Business Machines Corporation Negative-tone resist compositions and multifunctional polymers therein
JP6222057B2 (ja) * 2014-11-25 2017-11-01 信越化学工業株式会社 化学増幅レジスト材料及びパターン形成方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201439679A (zh) * 2013-01-29 2014-10-16 Shinetsu Chemical Co 負型光阻材料及利用此之圖案形成方法

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CN106054521A (zh) 2016-10-26
JP2016200651A (ja) 2016-12-01
JP6274144B2 (ja) 2018-02-07
CN106054521B (zh) 2020-03-10
TW201642042A (zh) 2016-12-01

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