TWI587464B - 封裝結構及其製造方法 - Google Patents

封裝結構及其製造方法 Download PDF

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Publication number
TWI587464B
TWI587464B TW104137129A TW104137129A TWI587464B TW I587464 B TWI587464 B TW I587464B TW 104137129 A TW104137129 A TW 104137129A TW 104137129 A TW104137129 A TW 104137129A TW I587464 B TWI587464 B TW I587464B
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Taiwan
Prior art keywords
molding compound
package
buffer layer
opening
layer
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TW104137129A
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English (en)
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TW201633476A (zh
Inventor
邱梧森
鄭禮輝
蔡柏豪
林俊成
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台灣積體電路製造股份有限公司
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Priority claimed from US14/577,450 external-priority patent/US9455211B2/en
Application filed by 台灣積體電路製造股份有限公司 filed Critical 台灣積體電路製造股份有限公司
Publication of TW201633476A publication Critical patent/TW201633476A/zh
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Publication of TWI587464B publication Critical patent/TWI587464B/zh

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    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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Description

封裝結構及其製造方法
本揭露係關於在緩衝層中具有開口的積體扇出結構。
隨著半導體技術的演化，半導體晶片/晶粒變得越來越小。同時，需要在半導體晶粒中整合更多功能。據此，半導體晶粒需要在較小的面積中封裝更多數量的I/O墊，並且隨著時間快速增加I/O墊的密度。因此，半導體晶粒的封裝變得更為困難，而不利地影響封裝產量。
習知的封裝技術可分為兩類。在第一類中，晶圓上的晶粒在切割之前就被封裝。此封裝技術具有一些有利的特徵，例如較大的產量與較低的成本。再者，需要較少的底膠填充或模塑料。然而，此封裝技術亦具有缺點，如前所述，晶粒的尺寸越來越小，並且個別封裝僅可為扇入型封裝，其中各個晶粒的I/O墊侷限於直接在個別晶粒之表面上方的區域。由於晶粒的面積有限，I/O墊的距離限制，因而I/O的數目有限。若要增加墊的距離，則可能發生焊橋。此外，在固定的球尺寸需求之下，焊球必須具有特定尺寸，因而限制晶粒表面上可封裝的焊球數目。
在另一類的封裝中，晶粒在封裝之前就從晶圓切割出來，並且僅封裝「已知的良好晶粒」。此封裝技術的優點特徵係形成扇出封裝的可能性，其係指相較於晶粒，晶粒上的I/O墊可分布在較 大的面積，因而可增加晶粒表面上封裝的I/O墊數目。
本揭露的一些實施例係提供一種結構，其包括第一封裝，其包括模塑料；貫穿通路，其穿過該模塑料；裝置晶粒，其係成型於該模塑料中；以及緩衝層，其係在該模塑料上並且接觸該模塑料，開口穿過該緩衝層至該貫穿通路，該緩衝層在一平面中具有波紋，該平面係平行於該模塑料與該緩衝層之間的介面並且在該開口的周圍附近。
本揭露的一些實施例係提供一種結構，其包括第一封裝，其包括模塑料，其包括平坦頂部表面與平坦底部表面；裝置晶粒，其係被該模塑料側向封裝；貫穿通路，其係穿過該模塑料；以及平坦介電層，其係位在該模塑料的該平坦頂部表面上方並且接觸該模塑料的該平坦頂部表面，開口係穿過該平坦介電層至該貫穿通路，波紋係在環繞該開口的該平坦介電層中；以及第二封裝，其係接合至該第一封裝，外部電連接件將該第一封裝電耦合至該第二封裝，該外部電連接件係至少部分位在該開口中。
本揭露的一些實施例係提供一種方法，其包括形成封裝，其包括形成複合結構，其包括裝置晶粒、模塑料、以及貫穿通路，該模塑料係至少側向封裝在該模塑料的第一表面與該模塑料的第二表面之間的該裝置晶粒，該貫穿通路係在該模塑料中並且自該模塑料的該第一表面延伸至該模塑料的該第二表面；在該模塑料的該第一表面上，形成緩衝層；以及使用雷射鑽孔形成開口穿過該緩衝層至該貫穿通路，該緩衝層具有在該開口附近的波紋。
20‧‧‧載體
22‧‧‧黏著層
24‧‧‧緩衝層
26‧‧‧晶種層
26A‧‧‧鈦層
26B‧‧‧銅層
28‧‧‧光阻
30‧‧‧開口
32‧‧‧金屬特徵
34‧‧‧晶粒
33‧‧‧貫穿通路
34‧‧‧裝置晶粒
35‧‧‧半導體基板
36‧‧‧黏著層
38‧‧‧介電層
40‧‧‧金屬柱
40A‧‧‧頂端
42‧‧‧成型材料
42A‧‧‧頂部表面
44‧‧‧RDL
46‧‧‧介電層
48‧‧‧電連接件
50‧‧‧TIV封裝
52‧‧‧切割膠帶
54‧‧‧壓層膜
56‧‧‧開口
58‧‧‧引導溝渠
60‧‧‧TIV封裝
80‧‧‧波紋
82‧‧‧雷射鑽孔
86‧‧‧插入物
62‧‧‧頂部封裝
68‧‧‧焊區
64‧‧‧封裝基板
66‧‧‧裝置晶粒
70‧‧‧間隙
72‧‧‧封裝組件
74‧‧‧底膠填充
76‧‧‧電連接件
78‧‧‧金屬導線
為了更完全理解本揭露之實施例及其優點，參閱以下說明內 容以及所附隨的圖式。
圖1至圖12與13A係根據一些實施例說明製造貫穿積體扇出通路(TIV)封裝的中間階段之剖面圖。
圖13B至13D係根據一些實施例說明在TIV封裝中形成的開口之圖式。
圖13E至13J係根據一些實施例說明在TIV封裝中形成之具有不同尺寸的開口之佈局圖式。
圖14A與14B係根據一些實施例說明TIV封裝的個別剖面圖與俯視圖。
圖15係說明TIV封裝與頂部封裝的接合。
圖16係根據一些實施例說明TIV封裝與頂部封裝之間的間隙中施加底膠填充。
以下內容詳細說明本揭露的實施例之形成與使用。然而，應理解實施例提供許多可應用的觀念，其可實施在廣泛的特定內容。所討論的特定實施例係用於說明，而非限制本揭露的範圍。
根據不同的實施例，提供包含貫穿通路的積體扇出(InFO)封裝及其形成方法。以下說明形成InFO封裝的中間階段。討論實施例的變化。在不同的實施例與說明實施例中，相同的元件符號係代表相同的元件。
圖1至12、13A、14A、15與16係根據一些實施例說明製造封裝結構的中間階段之剖面圖。參閱圖1，提供載體20，以及黏著層22係位在載體20上。載體20可為空白玻璃載體、空白陶瓷載體、或類似物。黏著層22可由黏著劑形成，例如紫外線(UV)膠、光熱轉換(LTHC)膠、或類似物，然而亦可使用其他形式的黏著劑。
參閱圖2，在黏著層22上方，形成緩衝層24。緩衝層24係介電層，其可為包含聚合物的聚合物層。例如，聚合物可為聚亞醯胺、聚苯并噁 唑(PBO)、苯并環丁烯(BCB)、ABF(Ajinomoto Buildup膜)、阻焊膜(SR)、或類似物。緩衝層24具有均勻厚度的平面層，其中厚度T1可大於約2微米，並且可在約2微米至約40微米之間。緩衝層24的頂部與底部表面亦為平坦的。
例如，經由物理氣相沉積(PVD)或金屬箔壓層，在緩衝層24上形成晶種層26。晶種層26可包括銅、銅合金、鋁、鈦、鈦合金、或其組合。在一些實施例中，晶種層26包括鈦層26A以及在鈦層26A上方的銅層26B。在其他實施例中，晶種層26係銅層。
參閱圖3，在晶種層26上方施加光阻28，並且將其圖案化。因此，在光阻28中形成開口30，晶種層26的一些部分係經由該開口而暴露。
如圖4所示，經由鍍，其可為電鍍或是無電鍍，在光阻28中形成金屬特徵32。金屬特徵32係鍍在晶種層26的暴露部分上。金屬特徵32可包括銅、鋁、鎢、鎳、焊料、或其合金。金屬特徵32的俯視形狀可為矩形、正方形、圓形、或類似者。藉由後續所放置的晶粒34(圖7)決定金屬特徵32的高度，在一些實施例中，金屬特徵32的高度係大於晶粒34的厚度。在鍍金屬特徵32之後，移除光阻28，所得到的結構如圖5所示。在移除光阻28之後，暴露出被光阻28所覆蓋之部分的晶種層26。
參閱圖6，進行蝕刻步驟，移除晶種層26的暴露部分，其中該蝕刻可為非等向性蝕刻。另一方面，被金屬特徵32覆蓋的部分之晶種層26保持未被蝕刻。在本揭露中，金屬特徵32與剩餘的下方部分晶種層26係組合為貫穿InFO通路(TIV)33，其亦指為貫穿通路33。雖然晶種層26顯示為與金屬特徵32分離的層，然而當晶種層26係由與個別的上方金屬特徵32類似或相同的材料所形成時，晶種層26可與金屬特徵32合併而無可區分的介面於其間。在一些實施例中，晶種層26與上方的金屬特徵32之間具有可區分的介面。
圖7係說明在緩衝層24上方置放裝置晶粒34。裝置晶粒34可藉由黏著層36而附貼至緩衝層24。裝置晶粒34可為邏輯裝置晶粒，其包含邏輯電晶體於其中。在一些實施例中，可將裝置晶粒34設計用於行動應用，並且可 為中央計算單元(CPU)晶粒、功率管理積體電路(PMIC)晶粒、收發器(TRX)晶粒、或類似物。各個裝置晶粒34包含半導體基板35(例如，矽基板)，其接觸黏著層36，其中半導體基板35的背面係接觸黏著層36。
在一些實施例中，金屬柱40(例如銅柱)形成為裝置晶粒34的頂部並且電耦合至裝置晶粒34中的裝置，例如電晶體(未繪示)。在一些實施例中，在個別裝置晶粒34的頂部表面形成介電層38，金屬柱40具有至少下部在介電層38中。在一些實施例中，金屬柱40的頂部表面亦可與金屬柱40的頂部表面齊平。或者，不形成介電層38，金屬柱40突出於個別裝置晶粒34的頂部介電層上方。
參閱圖8，在裝置晶粒34與TIV 33上，塑形成型材料42。成型材料42填充裝置晶粒34與TIV 33之間的間隙，並且可與緩衝層24接觸。再者，當金屬柱40係突出金屬柱時，成型材料42係填充在金屬柱40之間的間隙中。成型材料42可包含模塑料、成型底膠填充、環氧化合物、或樹脂。成型材料42的頂部表面係高於金屬柱40與TIV 33的頂端。
接著，進行研磨步驟，以薄化成型材料42，直到暴露金屬柱40與TIV 33。所得到的結構係如圖9所示。由於研磨製程，金屬特徵32的頂端32A係與金屬柱40的頂端40A實質齊平(共平面)，並且與成型材料42的頂部表面42A實質齊平(共平面)。研磨的結果可產生金屬殘留物，例如金屬顆粒，留在頂部表面上32A、40A與42A。據此，在研磨之後，例如可藉由溼式蝕刻進行清理因而移除金屬殘留物。
接著，參閱圖10，在成型材料42上方形成重佈線(RDL)44，以連接至金屬柱40與TIV 33。RDL 44亦可互連金屬柱40與TIV 33。根據不同的實施例，在圖9所示的結構上方形成一或複數個介電層46，RDL 44形成於介電層46中。在一些實施例中，一層RDL 44與介電層46的形成係包含形成毯銅晶種層、在毯銅晶種層上方形成且圖案化遮罩層、進行鍍以形成RDL 44、移除遮罩層、以及進行閃蝕(flash etching)以移除未被RDL 44覆蓋的毯銅晶種層之部分。 在其他實施例中，藉由沉積金屬層而形成RDL 44、圖案化金屬層、以及用介電層46填充RDL 44之間的間隙。RDL 44可包括金屬或金屬合金，包含鋁、銅、鎢、與/或其合金。圖10係說明兩層RDL 44，然而可比兩層RDL在多一或多層，這取決於個別封裝的路由需求。在這些實施例中，介電層46可包括聚合物，例如聚亞醯胺、苯并環丁烯(BCB)、聚苯并噁唑(PBO)、或類似物。或者，介電層46可包含非有機介電材料，例如氧化矽、氮化矽、碳化矽、氮氧化矽、或類似物。
圖11係根據一些實施例說明電連接件48的形成。電連接件48的形成可包含在RDL 44(或凸塊下金屬層，(若有，未繪示))的暴露部分上放置焊球，而後回銲焊球。在其他實施例中，電連接件48的形成包含進行鍍步驟，以於RDL 44上方形成焊接區，而後回銲焊接區。電連接件48亦可包含金屬柱或金屬柱與焊帽，其亦可經由鍍而形成。在本揭露的說明中，包含裝置晶粒34、TIV 33、成型材料42、上方RDL 44與介電層46、以及緩衝層24的組合結構係指TIV封裝50，其可為複合晶圓。
接著，TIV封裝50係從載體20脫離。黏著層22亦從TIV封裝50清除。所得的結構係如圖12所示。移除黏著層22的結果，暴露緩衝層24。TIV封裝50係進一步貼附至切割膠帶52，其中電連接件48面朝上，並且可接觸切割膠帶52。在一些實施例中，壓層膜54係放置在暴露的緩衝層24上，其中壓層膜54可包括SR、ABF、背面包覆膠帶、或類似物。在其他膜中，在緩衝層24上方沒有壓層膜54。
圖13A係說明緩衝層24與壓層膜54(若有)的開口。在緩衝層24與壓層膜54中，形成開口56與引導溝渠58。根據一些實施例，使用雷射鑽孔，形成開口58與引導溝渠58，然而亦可使用光微影蝕刻製程。經由開口56暴露TIV 33。在晶種層26(圖1)包含鈦部分26A的實施例中，進行蝕刻步驟，移除鈦部分26A，因而暴露晶種層26的銅部分26B。然而，若晶種層26不包含鈦，則省略蝕刻步驟。
圖13B與13D係說明使用雷射鑽孔時形成開口56，圖13E至13J係說明具有不同尺寸的開口56之範例。圖13B係說明壓層膜54與緩衝層24中的開口56之部分的剖面圖(例如，對應於圖13A的剖面圖之X-Z平面)。緩衝層24可具有雷射鑽孔82所得的波紋80，以形成開口56。雷射鑽孔82(例如雷射)以與層的法線(例如，所示之Z方向)為入射角θ照射在不同層上。如圖所示，波紋80係形成在緩衝層24中，以及在其他實施例中，若有波紋80，波紋80亦可形成在壓層膜54中。在說明中，緩衝層24中的波紋80係從壓層膜54的側壁投射至開口56。
圖13C至圖13D係說明開口56的佈局圖式(例如，在X-Y平面)。圖13D係進一步說明圖13中的插入物86。緩衝層24中的波紋80係形成在開口56的周邊附近。波紋80可為在開口56之周邊附近以週期形式配置(periodic configuration)。開口56可具有直徑D，其可為開口56所暴露之晶種層26的部分與/或TIV 33之直徑。直徑D可表示為瞬間直徑，其可從波紋80至對立的波紋80、從波谷至對立的波谷、或是波谷至對立的波紋80。平均直徑DAVE可表示為通過開口56的瞬間直徑D之平均。在一些實施例中，開口56的平均直徑DAVE可為約10微米至約600微米。
相鄰的波紋80可具有高峰至高峰距離△。再者，波紋80可具有波谷至波峰高度H。在一些實施例中，波紋80的高度H可為約0.2微米至約20微米。在一些實施例中，距離△可為約0.2微米至約20微米。在一些實施例中，距離△可表示為，其中λ係輻射的波長，例如雷射鑽孔中所使用的雷射波長，以及θ係雷射鑽孔中所使用的輻射之入射角度(如圖13B所示)。在一些實施例中，雷射鑽孔的雷射源可為UV源(其可具有波長355nm)、綠源(其可具有波長532nm)、CO2源(其可具有波長9.4μm)、或類似者。在圖13C與13D所示之實施例中，高度H係約8微米，以及距離△係約10微米。
圖13E至13J係說明具有不同平均直徑DAVE的開口56之佈局圖 式(例如在X-Y平面)。在圖13E中的開口56之平均直徑DAVE係80微米。在圖13F中的開口56之平均直徑DAVE係120微米。在圖13G中的開口56之平均直徑DAVE係152微米。在圖13H中的開口56之平均直徑DAVE係190微米。在圖13I中的開口56之平均直徑DAVE係220微米。在圖13J中的開口56之平均直徑DAVE係250微米。
參閱圖13A，亦可在緩衝層24與壓層膜54中形成引導溝渠58。在一些實施例中，引導溝渠58係形成為環狀，如圖14B所示。據此，引導溝渠58亦係指引導溝渠環58，然而亦可形成為分離的引導溝渠帶或是部分環。如圖13所示，在一些實施例中，各個引導溝渠58係包圍緩衝層24的中心部分，其係與整個裝置晶粒34重疊，引導溝渠58係不與裝置晶粒34對位。或者，引導溝渠58不延伸至直接在裝置晶粒34上方的區域中。引導溝渠58的底部可與成型材料42的頂部表面42A實質齊平，因而引導溝渠58係穿過緩衝層24與壓層膜54。在其他實施例中，引導溝渠58不穿過緩衝層24，並且緩衝層24的下部保持在下方的引導溝渠58。在其他實施例中，引導溝渠58係穿過緩衝層24，並且延伸至成型材料42中。
接著，將TIV封裝50切割為複數個TIV封裝60。圖14A與14B係分別說明TIV封裝60之一的俯視圖與剖面圖。在一些實施例中，施加焊膏(未繪示)至暴露的TIV 33。在其他實施例中，未使用焊膏。如圖14B所示，在俯視圖中，引導溝渠環58係包圍裝置晶粒34。雖然所示之引導溝渠環58的內緣係自裝置晶粒34的個別邊緣偏移，然而引導溝渠環58的內緣亦可對準個別裝置晶粒34的邊緣。在一些實施例中，各個TIV封裝60中有單一引導溝渠環58。在其他實施例中，有二或多個引導溝渠環58。引導溝渠環58的寬度W1與W2可大於約60微米，並且可在約60微米至約250微米之間。引導溝渠環58的深度D1(圖14A)可大於約2微米，並且可在約2微米至約50微米之間。
圖15係說明接合頂部封裝62至TIV封裝60，其中接合可經由焊區68。在本揭露的說明中，由於TIV封裝60可作為底部封裝，因而亦稱為底部封裝60，如圖15所示。在一些實施例中，頂部封裝62包含接合至封裝基板64 的裝置晶粒66。裝置晶粒66可包含記憶體晶粒，其可為例如靜態隨機存取記憶體(SRAM)晶粒、動態隨機存取記憶體(DRAM)晶粒、或類似物。頂部封裝62的底部表面與TIV封裝60的頂部表面係彼此相隔間隙70，其中頂部封裝62與TIV封裝60的相距距離為S1，其可為約10微米至約100微米之間，然而相距距離可為其他數值。
參閱圖16，接合的頂部封裝62與TIV封裝60進一步接合至另一封裝組件72，其在一些實施例中可為封裝基板。在其他實施例中，封裝組件72包括印刷電路板(PCB)。封裝組件72可具有在對側上的電連接件76(例如金屬電或金屬柱)，以及與電連接件76互連的金屬導線78。
在一些實施例中，底膠填充74係用於填充間隙70(圖15)。底膠填充74亦可密封間隙70的周圍部分，而間隙70的中心部分70’未被底膠填充74填充。在施加底膠填充74中，底膠填充74流入間隙70與引導溝渠58中(圖15)中。由於引導溝渠58比間隙70的中心部分70’深，因而底膠填充74在引導溝渠58中流動比在中心間隙部分70’中更快。據此，在底膠填充流入中心部分70’中之前，底膠填充74會先填充引導溝渠58，中心部分70’係與裝置晶粒34重疊。藉由在適當時間結束底膠填充製程，底膠填充74填充在引導溝渠58中，但不會進入中心間隙部分70’。因此，底膠填充74可包圍並且不會填充至中心間隙部分70’。因此，中心間隙部分70’保持為空的空間，其可為填充空氣的空氣間隙或是真空的空間。
在本揭露的實施例中，TIV封裝與上方頂部封裝係彼此相隔空的空間，其可為空氣間隙或是真空的空間。由於空的空間的熱絕緣性優於底膠填充的熱絕緣性，因而空的空間具有較佳的能力防止TIV封裝中的裝置晶粒中的熱傳導至頂部封裝中的晶粒，並且防止TIV封裝中的裝置晶粒中的熱影響頂部封裝中的晶粒操作。若未形成引導溝渠，則底膠填充填入TIV封裝與頂部封裝之間的間隙之距離係隨機的，因而空的空間之形成不均勻。經由在緩衝層中形成引導溝渠，更可控制空的空間之形成，且其形成較均勻。
根據一些實施例，底部封裝包含模塑料、在模塑料上方且接觸模塑料的緩衝層、以及穿過模塑料的貫穿通路。裝置晶粒於模塑料中成型。引導溝渠係自緩衝層的頂部表面延伸至緩衝層中，其中引導溝渠係不與裝置晶粒對位。
根據其他實施例，封裝包含底部封裝，以及接合至底部封裝的頂部封裝。底部封裝包含模塑料，其具有平坦頂部表面與平坦底部表面、在模塑料中成型的裝置晶粒、在模塑料的平坦頂部表面上方且接觸模塑料的平坦頂部表面之平坦介電層、貫穿模塑料的貫穿通路、以及在平坦介電層中的第一引導溝渠環。頂部封裝係與底部封裝相隔一間隙，其中第一引導溝渠環係連接至間隙。底膠填充係填充間隙的周圍以及至少部分的第一引導溝渠環，其中間隙的中心部分係被底膠填充包圍，以及中心部分形成空的空間。
根據其他的實施例，方法包含在介電緩衝層上方，形成貫穿通路、在介電緩衝層上方，放置裝置晶粒、在模塑料中成型裝置晶粒與貫穿通路、以及將模塑料平面化以暴露貫穿通路與裝置晶粒的金屬柱。在貫穿通路與金屬柱的上方形成重佈層，其電耦合至貫穿通路與金屬柱。在介電緩衝層中形成開口以暴露貫穿通路。在介電緩衝層中，形成引導溝渠環。
根據其他實施例，結構包括第一封裝。第一封裝包括模塑料、穿過模塑料的貫穿通路、在模塑料中成型的裝置晶粒、以及在模塑料上且接觸模塑料的緩衝層。開口穿過緩衝層至貫穿通路。緩衝層在一平面具有波紋，該平面係平行於模塑料與緩衝層之間的介面並且在開口周圍附近。
根據其他實施例，結構包括第一封裝以及接合至第一封裝的第二封裝。第一封裝包括模塑料，其包括平坦頂部表面與平坦底部表面、以模塑料側向封裝的裝置晶粒、貫穿模塑料的貫穿通路、以及在模塑料的平坦頂部表面上方且接觸模塑料的平坦頂部表面之平坦介電層。開口係穿過平坦介電層至貫穿通路。波紋係在環繞開口的平坦介電層中。外部電連接件係將第一封裝電耦合至第二封裝，以及外部電連接件係至少部分位在開口中。
根據其他實施例，方法包括形成封裝。形成封裝包括形成複合結構。複合結構包括裝置晶粒、模塑料、以及貫穿通路。模塑料至少側向封裝模塑料之第一表面與模塑料之第二表面之間的裝置晶粒。貫穿通路係在模塑料中，並且自模塑料的第一表面延伸至模塑料的第二表面。形成封裝進一步包括在模塑料的第一表面上形成緩衝層，以及使用雷射鑽孔形成開口穿過緩衝層至貫穿通路。緩衝層具有在開口附近的波紋。
雖然本揭露已詳述實施例及其優點，然而應理解可有各種變化、取代與改變而不脫離申請專利範圍所定義之精神與範圍。再者，本申請案的範圍並非限定於說明書中所述之製程、機器、製造、物質組合物、裝置、方法與步驟的特定實施例。該技藝中具有通常技術者可從本揭露理解可使用與本文所述之實施例對應實施例進行實質相同的功能或是達成實質相同的結果之現存的或是未來將發展的製程、機器、製造、物質組合物、裝置、方法與步驟。據此，本申請案之申請專利範圍包含該些製程、機器、製造、物質組合物、裝置、方法與步驟的範圍。此外，每一請求項構成個別的實施例，並且不同的請求項與實施例之組合係在本揭露的範圍之內。
24‧‧‧緩衝層
26‧‧‧晶種層
32‧‧‧金屬特徵
34‧‧‧晶粒
33‧‧‧貫穿通路
34‧‧‧裝置晶粒
35‧‧‧半導體基板
36‧‧‧黏著層
38‧‧‧介電層
40‧‧‧金屬柱
42‧‧‧成型材料
44‧‧‧RDL
46‧‧‧介電層
48‧‧‧電連接件
54‧‧‧壓層膜
56‧‧‧開口
58‧‧‧引導溝渠
60‧‧‧TIV封裝

Claims (10)

  1. 一種封裝結構，其包括：第一封裝，其包括：模塑料；貫穿通路，其穿過該模塑料；裝置晶粒，其係成型於該模塑料中；緩衝層，其係在該模塑料上並且接觸該模塑料，開口穿過該緩衝層至該貫穿通路，該緩衝層在一平面中具有波紋，該平面係平行於該模塑料與該緩衝層之間的介面並且在該開口的周圍附近；以及引導溝渠，其穿過該緩衝層至該模塑料。
  2. 如請求項1所述之封裝結構，其中該第一封裝進一步包括在該緩衝層上的壓層膜，該緩衝層係在該壓層膜與該模塑料之間，該開口係穿過該壓層膜。
  3. 如請求項1所述之封裝結構，其中該波紋係在該開口之該周圍附近以週期形式配置。
  4. 如請求項1所述之封裝結構，進一步包括第二封裝，其係藉由電連接件通過該開口而接合至該第一封裝。
  5. 如請求項1所述之封裝結構，其中該引導溝渠係自該緩衝層的表面延伸至該緩衝層中，且不與該裝置晶粒對位。
  6. 一種封裝結構，其包括：第一封裝，其包括：模塑料，其包括平坦頂部表面與平坦底部表面；裝置晶粒，其係被該模塑料側向封裝；貫穿通路，其係穿過該模塑料； 平坦介電層，其係位在該模塑料的該平坦頂部表面上方並且接觸該模塑料的該平坦頂部表面，開口係穿過該平坦介電層至該貫穿通路，波紋係在環繞該開口的該平坦介電層中；以及引導溝渠，其穿過該平坦介電層至該模塑料的該平坦頂部表面；以及第二封裝，其係接合至該第一封裝，外部電連接件將該第一封裝電耦合至該第二封裝，該外部電連接件係至少部分位在該開口中。
  7. 如請求項6所述之封裝結構，其中該第一封裝進一步包括在該平坦介電層上的壓層膜，該平坦介電層係在該壓層膜與該模塑料之間，該開口係穿過該壓層膜。
  8. 一種製造封裝結構的方法，其包括：形成封裝，其包括：形成複合結構，其包括裝置晶粒、模塑料、以及貫穿通路，該模塑料係至少側向封裝在該模塑料的第一表面與該模塑料的第二表面之間的該裝置晶粒，該貫穿通路係在該模塑料中並且自該模塑料的該第一表面延伸至該模塑料的該第二表面；在該模塑料的該第一表面上，形成緩衝層；以及使用雷射鑽孔形成開口穿過該緩衝層至該貫穿通路，該緩衝層在該開口附近具有波紋。
  9. 如請求項8所述之方法，其中形成該封裝進一步包括在該緩衝層上，形成壓層膜，形成該開口進一步包括使用該雷射鑽孔形成該開口穿過該壓層膜。
  10. 如請求項8所述之方法，其中形成該封裝進一步包括在該緩衝層中，形成引導溝渠。
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