TWI585884B - 半導體裝置之製造方法、基板處理裝置及記錄媒體 - Google Patents

半導體裝置之製造方法、基板處理裝置及記錄媒體 Download PDF

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TWI585884B
TWI585884B TW104123434A TW104123434A TWI585884B TW I585884 B TWI585884 B TW I585884B TW 104123434 A TW104123434 A TW 104123434A TW 104123434 A TW104123434 A TW 104123434A TW I585884 B TWI585884 B TW I585884B
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gas
processing chamber
substrate
processing
support table
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TW104123434A
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English (en)
Chinese (zh)
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TW201611159A (zh
Inventor
Ryuji Yamamoto
Tsukasa Kamakura
Yoshiro Hirose
Satoshi Shimamoto
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Hitachi Int Electric Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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    • H01L21/02296Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02334Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment in-situ cleaning after layer formation, e.g. removing process residues
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405Cleaning of reactor or parts inside the reactor by using reactive gases
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    • H01J37/32715Workpiece holder
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Materials Engineering (AREA)
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  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
TW104123434A 2014-09-02 2015-07-20 半導體裝置之製造方法、基板處理裝置及記錄媒體 TWI585884B (zh)

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