TWI584915B - Method for detecting abrasive anomaly of substrate and grinding device - Google Patents
Method for detecting abrasive anomaly of substrate and grinding device Download PDFInfo
- Publication number
- TWI584915B TWI584915B TW102134256A TW102134256A TWI584915B TW I584915 B TWI584915 B TW I584915B TW 102134256 A TW102134256 A TW 102134256A TW 102134256 A TW102134256 A TW 102134256A TW I584915 B TWI584915 B TW I584915B
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing
- substrate
- wafer
- grinding
- edge portion
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 64
- 238000000034 method Methods 0.000 title claims description 32
- 238000005498 polishing Methods 0.000 claims description 484
- 238000003825 pressing Methods 0.000 claims description 83
- 230000005856 abnormality Effects 0.000 claims description 54
- 230000002159 abnormal effect Effects 0.000 claims description 3
- 230000007246 mechanism Effects 0.000 description 69
- 238000010586 diagram Methods 0.000 description 33
- 230000033001 locomotion Effects 0.000 description 27
- 238000011084 recovery Methods 0.000 description 25
- 230000002093 peripheral effect Effects 0.000 description 21
- 239000007789 gas Substances 0.000 description 9
- 238000009434 installation Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000006061 abrasive grain Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000004064 recycling Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000003708 edge detection Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
- B24B21/002—Machines or devices using grinding or polishing belts; Accessories therefor for grinding edges or bevels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012209499A JP5889760B2 (ja) | 2012-09-24 | 2012-09-24 | 基板の研磨異常検出方法および研磨装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201417952A TW201417952A (zh) | 2014-05-16 |
| TWI584915B true TWI584915B (zh) | 2017-06-01 |
Family
ID=50339280
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106112213A TWI611871B (zh) | 2012-09-24 | 2013-09-24 | 基板的研磨異常檢測方法及研磨裝置 |
| TW102134256A TWI584915B (zh) | 2012-09-24 | 2013-09-24 | Method for detecting abrasive anomaly of substrate and grinding device |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106112213A TWI611871B (zh) | 2012-09-24 | 2013-09-24 | 基板的研磨異常檢測方法及研磨裝置 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US9248543B2 (OSRAM) |
| JP (2) | JP5889760B2 (OSRAM) |
| KR (2) | KR101664532B1 (OSRAM) |
| TW (2) | TWI611871B (OSRAM) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9457447B2 (en) * | 2011-03-28 | 2016-10-04 | Ebara Corporation | Polishing apparatus and polishing method |
| JP5889760B2 (ja) * | 2012-09-24 | 2016-03-22 | 株式会社荏原製作所 | 基板の研磨異常検出方法および研磨装置 |
| JP2015006709A (ja) * | 2013-06-25 | 2015-01-15 | 株式会社ディスコ | ウエーハの研削方法及び研削装置 |
| JP2016058675A (ja) | 2014-09-12 | 2016-04-21 | 株式会社東芝 | 研磨装置および半導体ウェハの研磨方法 |
| JP6532884B2 (ja) * | 2014-10-31 | 2019-06-19 | 株式会社荏原製作所 | ワークピースを研磨するための化学機械研磨装置 |
| JP2017148931A (ja) * | 2016-02-19 | 2017-08-31 | 株式会社荏原製作所 | 研磨装置および研磨方法 |
| JP2018114580A (ja) * | 2017-01-17 | 2018-07-26 | 株式会社ディスコ | ウエーハの加工方法及び切削装置 |
| JP6920849B2 (ja) * | 2017-03-27 | 2021-08-18 | 株式会社荏原製作所 | 基板処理方法および装置 |
| CN108255129B (zh) * | 2018-01-15 | 2020-08-28 | 中国工程物理研究院机械制造工艺研究所 | 一种工件抛光检测方法 |
| US11131541B2 (en) * | 2018-06-29 | 2021-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Shutter monitoring system |
| JP7121572B2 (ja) * | 2018-07-20 | 2022-08-18 | 株式会社荏原製作所 | 研磨装置および研磨方法 |
| JP7047797B2 (ja) * | 2019-02-25 | 2022-04-05 | 株式会社Sumco | 貼り合わせウェーハのテラス加工方法及びテラス加工装置 |
| IT201900003011A1 (it) * | 2019-03-01 | 2020-09-01 | Soltek S R L | Macchina per la rettifica di elementi lastriformi e relativo metodo |
| IT201900003001A1 (it) * | 2019-03-01 | 2020-09-01 | Soltek S R L | Macchina per la rettifica di elementi lastriformi e relativo metodo |
| JP7278153B2 (ja) * | 2019-06-04 | 2023-05-19 | 東京エレクトロン株式会社 | 基板加工装置、および基板加工方法 |
| CN111761420B (zh) * | 2020-06-16 | 2021-10-15 | 上海中欣晶圆半导体科技有限公司 | 一种提高硅片倒角宽幅精度的方法 |
| WO2023162714A1 (ja) * | 2022-02-25 | 2023-08-31 | 株式会社荏原製作所 | 基板研磨装置 |
| US20230411227A1 (en) * | 2022-06-17 | 2023-12-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor processing tool and methods of operation |
| JP2024070925A (ja) * | 2022-11-14 | 2024-05-24 | 株式会社荏原製作所 | 研磨装置 |
| CN119897783B (zh) * | 2024-12-30 | 2025-11-21 | 华海清科股份有限公司 | 晶圆边缘抛光方法和抛光装置 |
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| TW466153B (en) * | 1999-06-22 | 2001-12-01 | Applied Materials Inc | Method and apparatus for measuring a pad profile and closed loop control of a pad conditioning process |
| US6402596B1 (en) * | 2000-01-25 | 2002-06-11 | Speedfam-Ipec Co., Ltd. | Single-side polishing method for substrate edge, and apparatus therefor |
| JP2003285266A (ja) * | 2002-03-27 | 2003-10-07 | Toshiba Corp | 研磨方法および研磨装置 |
| US20120252320A1 (en) * | 2011-03-28 | 2012-10-04 | Masaya Seki | Polishing apparatus and polishing method |
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| JPH08267347A (ja) * | 1995-03-31 | 1996-10-15 | Shin Etsu Handotai Co Ltd | オリエンテーション・フラットを有するウエーハ面取り部の鏡面研磨方法とその装置 |
| JPH10328993A (ja) * | 1997-05-26 | 1998-12-15 | Topcon Corp | レンズ形状測定装置 |
| JP3730406B2 (ja) * | 1998-04-30 | 2006-01-05 | 株式会社ニデック | 眼鏡レンズ加工装置 |
| JP2000117622A (ja) * | 1998-10-14 | 2000-04-25 | Mitsubishi Materials Corp | 研磨装置のメンテナンス管理方法、管理装置及びメンテナンス管理プログラムを記録した記録媒体 |
| US6776692B1 (en) * | 1999-07-09 | 2004-08-17 | Applied Materials Inc. | Closed-loop control of wafer polishing in a chemical mechanical polishing system |
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| JP2001347447A (ja) * | 2000-06-08 | 2001-12-18 | Fujikoshi Mach Corp | テープ研磨装置 |
| JP2005305586A (ja) * | 2004-04-20 | 2005-11-04 | Nihon Micro Coating Co Ltd | 研磨装置 |
| TWI352645B (en) * | 2004-05-28 | 2011-11-21 | Ebara Corp | Apparatus for inspecting and polishing substrate r |
| JP2006066891A (ja) | 2004-07-26 | 2006-03-09 | Toshiba Corp | 基板処理方法および基板処理装置 |
| CN104044057B (zh) * | 2004-11-01 | 2017-05-17 | 株式会社荏原制作所 | 抛光设备 |
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| JP2007290111A (ja) | 2006-03-29 | 2007-11-08 | Ebara Corp | 研磨方法および研磨装置 |
| JP2008018502A (ja) | 2006-07-13 | 2008-01-31 | Ebara Corp | 基板研磨装置、基板研磨方法、及び基板処理装置 |
| JP2008036784A (ja) * | 2006-08-08 | 2008-02-21 | Sony Corp | 研磨方法および研磨装置 |
| JP5274993B2 (ja) * | 2007-12-03 | 2013-08-28 | 株式会社荏原製作所 | 研磨装置 |
| JP5211835B2 (ja) * | 2008-04-30 | 2013-06-12 | ソニー株式会社 | ウエハ研磨装置およびウエハ研磨方法 |
| JP2010201546A (ja) * | 2009-03-03 | 2010-09-16 | Lasertec Corp | 欠陥修正方法及び装置 |
| JP5571409B2 (ja) * | 2010-02-22 | 2014-08-13 | 株式会社荏原製作所 | 半導体装置の製造方法 |
| JP5598241B2 (ja) * | 2010-10-12 | 2014-10-01 | 旭硝子株式会社 | ガラス基板の研磨方法及び製造方法、並びに研磨装置 |
| JP2012204545A (ja) | 2011-03-24 | 2012-10-22 | Toshiba Corp | 半導体装置の製造方法および製造装置 |
| JP6013849B2 (ja) | 2012-09-24 | 2016-10-25 | 株式会社荏原製作所 | 研磨方法 |
| JP5889760B2 (ja) * | 2012-09-24 | 2016-03-22 | 株式会社荏原製作所 | 基板の研磨異常検出方法および研磨装置 |
| JP6100541B2 (ja) * | 2013-01-30 | 2017-03-22 | 株式会社荏原製作所 | 研磨方法 |
| JP6568006B2 (ja) * | 2016-04-08 | 2019-08-28 | 株式会社荏原製作所 | 研磨装置および研磨方法 |
-
2012
- 2012-09-24 JP JP2012209499A patent/JP5889760B2/ja active Active
-
2013
- 2013-09-16 KR KR1020130110994A patent/KR101664532B1/ko active Active
- 2013-09-23 US US14/034,488 patent/US9248543B2/en active Active
- 2013-09-24 TW TW106112213A patent/TWI611871B/zh active
- 2013-09-24 TW TW102134256A patent/TWI584915B/zh active
-
2016
- 2016-01-04 US US14/987,434 patent/US9782869B2/en active Active
- 2016-02-17 JP JP2016027608A patent/JP6077152B2/ja active Active
- 2016-09-30 KR KR1020160126049A patent/KR101810331B1/ko active Active
-
2017
- 2017-07-19 US US15/654,594 patent/US10343252B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW466153B (en) * | 1999-06-22 | 2001-12-01 | Applied Materials Inc | Method and apparatus for measuring a pad profile and closed loop control of a pad conditioning process |
| US6402596B1 (en) * | 2000-01-25 | 2002-06-11 | Speedfam-Ipec Co., Ltd. | Single-side polishing method for substrate edge, and apparatus therefor |
| JP2003285266A (ja) * | 2002-03-27 | 2003-10-07 | Toshiba Corp | 研磨方法および研磨装置 |
| US20120252320A1 (en) * | 2011-03-28 | 2012-10-04 | Masaya Seki | Polishing apparatus and polishing method |
Also Published As
| Publication number | Publication date |
|---|---|
| US20140087627A1 (en) | 2014-03-27 |
| KR101664532B1 (ko) | 2016-10-10 |
| TW201417952A (zh) | 2014-05-16 |
| US9248543B2 (en) | 2016-02-02 |
| JP6077152B2 (ja) | 2017-02-08 |
| US10343252B2 (en) | 2019-07-09 |
| US20170312879A1 (en) | 2017-11-02 |
| TW201726322A (zh) | 2017-08-01 |
| JP2014061580A (ja) | 2014-04-10 |
| TWI611871B (zh) | 2018-01-21 |
| KR20140040012A (ko) | 2014-04-02 |
| KR20160119019A (ko) | 2016-10-12 |
| US9782869B2 (en) | 2017-10-10 |
| JP5889760B2 (ja) | 2016-03-22 |
| US20160114455A1 (en) | 2016-04-28 |
| JP2016112683A (ja) | 2016-06-23 |
| KR101810331B1 (ko) | 2017-12-18 |
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